APTM50AM38STG

APTM50AM38STG Phase leg Series & parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies NT C2 VBUS Q1 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration G1 OUT S1 Q2 G2 0/VBU S S2 NT C1 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS compliant OUT S1 S2 NTC2 G1 G2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 90 67 360 ±30 45 694 46 50 2500 Unit V A V mΩ W A July, 2006 VBUS mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM50AM38STG – Rev 5 OUT 0/ VBUS VDSS = 500V RDSon = 38mΩ typ @ Tj = 25°C ID = 90A @ Tc = 25°C APTM50AM38STG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Test Conditions Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy T j = 125°C Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Min Test Conditions IF = 90A IF = 180A IF = 90A IF = 90A VR = 133V di/dt = 600A/µs www.microsemi.com Unit Max Unit µA mΩ V nA nF nC 130 18 35 77 1510 µJ 1452 2482 µJ 1692 Min 200 Tj = 25°C Tj = 125°C Tc = 85°C ns 87 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 90A, R G = 2Ω VR=200V Typ 11.2 2.4 0.18 246 Max 200 1000 45 5 ±150 66 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 90A, R G = 2Ω Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM 38 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 90A R G = 2Ω Series diode ratings and characteristics Typ 3 VGS = 10V VBus = 250V ID = 90A Turn-off Delay Time Fall Time VGS = 0V,VDS = 400V Test Conditions VGS = 0V VDS = 25V f = 1MHz Rise Time Tf Tj = 25°C VGS = 10V, ID = 45A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Dynamic Characteristics Symbol Ciss Coss Crss Qg Min VGS = 0V,VDS = 500V Typ Max 500 750 Tj = 125°C 90 1.1 1.4 0.9 Tj = 25°C 24 Tj = 125°C 48 Tj = 25°C 99 Tj = 125°C 450 Unit V µA A 1.15 V ns July, 2006 IDSS Characteristic nC 2–7 APTM50AM38STG – Rev 5 Symbol APTM50AM38STG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IF(A V) VF Maximum Reverse Leakage Current VR=600V DC Forward Current Min 600 Tj = 25°C Tj = 125°C IF = 90A IF = 180A IF = 90A trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 90A VR = 400V di/dt = 600A/µs Tj = 125°C 90 1.8 2 1.3 Tj = 25°C 85 Tj = 125°C 160 Tj = 25°C Tj = 125°C 390 2100 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 200 150 100 TJ=25°C 50 T J=125°C 5.5V 0 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 RDS(on) vs Drain Current Normalized to VGS=10V @ 45A 1.15 VGS=10V 1.10 1.05 1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V) 8 DC Drain Current vs Case Temperature 100 I D, DC Drain Current (A) 1.20 TJ=-55°C V GS=20V 1.00 0.95 0.90 0.85 0.80 80 60 40 20 0 0 50 100 150 200 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 I D, Drain Current (A) 10 250 350 RDS(on) Drain to Source ON Resistance 1 5–7 APTM50AM38STG – Rev 5 Thermal Impedance (°C/W) 0.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=45A 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Threshold Voltage vs Temperature Maximum Safe Operating Area 1000 1.1 ID, Drain Current (A) VGS (TH), Threshold Voltage (Normalized) 1.2 1.0 0.9 0.8 0.7 0.6 100µs limited by R DSon 100 10 1ms Single pulse TJ =150°C TC=25°C 10ms 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage VGS , Gate to Source Voltage (V) 100000 Ciss 10000 Coss 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 V DS =100V I D=90A 12 T =25°C J V =250V DS 10 VDS=400V 8 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) July, 2006 C, Capacitance (pF) limited by RDSon www.microsemi.com 6–7 APTM50AM38STG – Rev 5 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50AM38STG APTM50AM38STG Delay Times vs Current Rise and Fall times vs Current 120 100 80 60 40 V DS =333V RG =2Ω T J=125°C L=100µH td(on) 20 80 60 40 tr 0 20 40 60 80 100 120 ID, Drain Current (A) 140 20 VDS=333V RG=2Ω T J=125°C L=100µH 4 3 80 100 120 140 Switching Energy vs Gate Resistance Eon Eoff 2 60 8 Switching Energy (mJ) 5 40 I D, Drain Current (A) Switching Energy vs Current 1 VDS=333V ID=90A TJ=125°C L=100µH 7 6 5 Eoff 4 Eon 3 2 Eoff 1 0 0 20 40 60 80 100 120 0 140 I D, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 350 V DS=333V D=50% R G=2Ω T J=125°C T C=75°C ZVS 300 250 200 150 ZCS 100 Hard switching 50 0 20 30 40 50 60 5 10 15 20 25 Gate Resistance (Ohms) 400 Frequency (kHz) tf 20 0 Switching Energy (mJ) VDS=333V RG=2Ω T J=125°C L=100µH 100 tr and t f (ns) t d(on) and td(off) (ns) td(off) 70 80 1000 Source to Drain Diode Forward Voltage T J=150°C 100 10 TJ=25°C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7–7 APTM50AM38STG – Rev 5 July, 2006 ID, Drain Current (A)