APTM50DDA10T3G

APTM50DDA10T3G VDSS = 500V RDSon = 100m typ @ Tj = 25°C ID = 37A @ Tc = 25°C Dual Boost chopper MOSFET Power Module Application  AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction 13 14 CR1 CR2 22 7 23 8 Q2 Q1 26 4 27 3 29 15 30 Features  Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged  Kelvin source for easy drive  Very low stray inductance  Internal thermistor for temperature monitoring 31 32 16 R1 Benefits  Outstanding performance at high frequency operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal for easy PCB mounting  Low profile  Each leg can be easily paralleled to achieve a single boost of twice the current capability  RoHS Compliant All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings (per MOSFET) ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 37 28 140 ±30 120 312 37 50 1600 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1-7 APTM50DDA10T3G – Rev 4 December, 2017 Symbol VDSS APTM50DDA10T3G Electrical Characteristics (per MOSFET) Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 500V VGS = 10V, ID = 18.5A VGS = VDS, ID = 1mA VGS = ±30 V, VDS = 0V Min Typ 100 3 Max 100 120 5 ±150 Unit µA m V nA Max Unit Dynamic Characteristics (per MOSFET) Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Typ 4367 894 61 pF 96 VGS = 10V VBus = 250V ID = 37A 24 nC 49 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 37A RG = 5 15 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 37A, RG = 5Ω Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 37A, RG = 5Ω 566 21 ns 73 52 µJ 545 931 µJ 635 0.4 °C/W Max 600 50 Unit V µA A Chopper Diode ratings and characteristics (per diode) Test Conditions Typ VR=600V VF Diode Forward Voltage IF = 40A trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 40A VR = 300V di/dt =2600A/µs RthJC Min Tc = 40°C Tj = 25°C Tj = 125°C 40 1.45 1.35 Tj = 25°C 95 Tj = 125°C 115 Tj = 25°C 2.6 Tj = 125°C 4 Junction to Case Thermal Resistance V ns µC 1.5 www.microsemi.com °C/W 2-7 APTM50DDA10T3G – Rev 4 December, 2017 Symbol Characteristic VRRM Peak Repetitive Reverse Voltage IRM Reverse Leakage Current IF DC Forward Current APTM50DDA10T3G Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To heatsink M4 Package Weight Min 4000 -40 -40 -40 -40 2 Max 150 TJmax - 25 125 125 3 110 Unit V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT  R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature 1  RT: Thermistor value at T   1   exp B25 / 85   T25 T   See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com www.microsemi.com 3-7 APTM50DDA10T3G – Rev 4 December, 2017 Package outline (dimensions in mm) APTM50DDA10T3G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 0.9 0.35 0.7 0.3 0.25 0.5 0.2 0.3 0.15 0.1 0.1 0.05 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 8V VGS=10&15V 120 7.5V ID, Drain Current (A) ID, Drain Current (A) 10 120 140 100 7V 80 6.5V 60 40 6V 20 5.5V VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 100 80 60 40 TJ=25°C 20 TJ=125°C TJ=-55°C 0 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 RDS(on) vs Drain Current 1.20 Normalized to VGS=10V @ 18.5A 1.15 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 40 VGS=10V ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance 1 1.10 1.05 VGS=20V 1.00 0.95 30 20 10 0.90 0 0 20 40 60 80 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 4-7 APTM50DDA10T3G – Rev 4 December, 2017 Thermal Impedance (°C/W) 0.45 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=18.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 50 75 100 125 150 Maximum Safe Operating Area 1.1 1.0 0.9 0.8 0.7 100µs 100 limited by RDSon limited by RDSon 1ms 10 0.6 Single pulse TJ=150°C TC=25°C 10ms 1 -50 -25 0 25 50 75 100 125 150 1 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 10000 Ciss 1000 Coss 100 Crss 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 VGS, Gate to Source Voltage (V) C, Capacitance (pF) 25 1000 1.2 100000 0 TJ, Junction Temperature (°C) ID=37A TJ=25°C 12 VDS=100V VDS=250V 10 50 www.microsemi.com VDS=400V 8 6 4 2 0 0 20 40 60 80 100 120 140 Gate Charge (nC) 5-7 APTM50DDA10T3G – Rev 4 December, 2017 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50DDA10T3G APTM50DDA10T3G Delay Times vs Current Rise and Fall times vs Current 100 td(off) 60 VDS=333V RG=5Ω TJ=125°C L=100µH 40 td(on) 20 VDS=333V RG=5Ω TJ=125°C L=100µH 80 tr and tf (ns) 60 40 20 tr 0 0 10 20 30 40 50 60 70 10 ID, Drain Current (A) VDS=333V RG=5Ω TJ=125°C L=100µH 1.6 1.2 40 50 60 70 Switching Energy vs Gate Resistance Eon Eoff 0.8 30 2.5 Switching Energy (mJ) Switching Energy (mJ) 2 20 ID, Drain Current (A) Switching Energy vs Current 0.4 Eoff VDS=333V ID=35A TJ=125°C L=100µH 2 1.5 Eon 1 Eoff 0.5 0 0 10 20 30 40 50 0 60 ID, Drain Current (A) Operating Frequency vs Drain Current 350 ZCS 300 IDR, Reverse Drain Current (A) VDS=333V D=50% RG=5Ω TJ=125°C TC=75°C 400 250 200 ZVS 150 hard switching 100 50 0 5 10 15 20 25 10 20 30 40 50 Gate Resistance (Ohms) 450 Frequency (kHz) tf 30 1000 100 Source to Drain Diode Forward Voltage TJ=150°C 10 TJ=25°C 1 35 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) ID, Drain Current (A) www.microsemi.com 6-7 APTM50DDA10T3G – Rev 4 December, 2017 td(on) and td(off) (ns) 80 APTM50DDA10T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp Life Support Application Seller's Products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the Seller's Product could create a situation where personal injury, death or property damage or loss may occur (collectively "Life Support Applications"). Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations that Seller was negligent regarding the design or manufacture of the goods. www.microsemi.com 7-7 APTM50DDA10T3G – Rev 4 December, 2017 Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the new proposed specific part.