APTM50DHM38G

APTM50DHM38G Asymmetrical - bridge MOSFET Power Module VDSS = 500V RDSon = 38mΩ typ @ Tj = 25°C ID = 90A @ Tc = 25°C Application VBUS • • • Q1 CR3 Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives G1 Features OUT2 S1 • Q4 OUT1 CR2 G4 0/VBUS S4 • • • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration OUT1 Benefits 0/VBUS S4 G4 OUT2 • • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 90 67 360 ±30 45 694 46 50 2500 Unit V A V mΩ W A July, 2006 VBUS S1 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM50DHM38G – Rev 3 G1 APTM50DHM38G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Test Conditions Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Diode ratings and characteristics Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 38 Min Test Conditions IF = 100A VR = 400V di/dt = 200A/µs www.microsemi.com Unit Max Unit µA mΩ V nA nF nC 130 18 35 77 1510 µJ 1452 2482 µJ 1692 Min 600 Tj = 25°C Tj = 125°C Tc = 80°C ns 87 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 90A, R G = 2Ω IF = 100A IF = 200A IF = 100A Typ 11.2 2.4 0.18 246 Max 200 1000 45 5 ±150 66 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 90A, R G = 2Ω VR=600V Typ 3 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 90A R G = 2Ω Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM T j = 125°C VGS = 10V VBus = 250V ID = 90A Turn-off Delay Time Fall Time VGS = 0V,VDS = 400V Test Conditions VGS = 0V VDS = 25V f = 1MHz Rise Time Tf Tj = 25°C VGS = 10V, ID = 45A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Dynamic Characteristics Symbol Ciss Coss Crss Qg Min VGS = 0V,VDS = 500V Typ Max 250 500 Tj = 125°C 100 1.6 1.9 1.4 Tj = 25°C 180 Tj = 125°C 220 Tj = 25°C 390 Tj = 125°C 1450 Unit V µA A 1.8 V ns July, 2006 IDSS Characteristic nC 2–6 APTM50DHM38G – Rev 3 Symbol APTM50DHM38G Thermal and package characteristics Symbol Characteristic Min Transistor Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 200 150 100 TJ=25°C 50 T J=125°C 5.5V 0 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 RDS(on) vs Drain Current Normalized to VGS=10V @ 45A 1.15 VGS=10V 1.10 1.05 1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V) 8 DC Drain Current vs Case Temperature 100 I D, DC Drain Current (A) 1.20 TJ=-55°C V GS=20V 1.00 0.95 0.90 0.85 0.80 80 60 40 20 0 0 50 100 150 200 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 I D, Drain Current (A) 10 250 350 RDS(on) Drain to Source ON Resistance 1 4–6 APTM50DHM38G – Rev 3 Thermal Impedance (°C/W) 0.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=45A 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Threshold Voltage vs Temperature Maximum Safe Operating Area 1000 1.1 ID, Drain Current (A) VGS (TH), Threshold Voltage (Normalized) 1.2 1.0 0.9 0.8 0.7 0.6 100µs limited by R DSon 100 10 1ms Single pulse TJ =150°C TC=25°C 10ms 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage VGS , Gate to Source Voltage (V) 100000 Ciss 10000 Coss 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 V DS =100V I D=90A 12 T =25°C J V =250V DS 10 VDS=400V 8 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) July, 2006 C, Capacitance (pF) limited by RDSon www.microsemi.com 5–6 APTM50DHM38G – Rev 3 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50DHM38G APTM50DHM38G Delay Times vs Current Rise and Fall times vs Current 120 100 80 60 40 V DS =333V RG =2Ω T J=125°C L=100µH td(on) 20 80 60 40 tr 0 20 40 60 80 100 120 ID, Drain Current (A) 140 20 VDS=333V RG=2Ω T J=125°C L=100µH 4 3 80 100 120 140 Switching Energy vs Gate Resistance Eon Eoff 2 60 8 Switching Energy (mJ) 5 40 I D, Drain Current (A) Switching Energy vs Current 1 VDS=333V ID=90A TJ=125°C L=100µH 7 6 5 Eoff 4 Eon 3 2 Eoff 1 0 0 20 40 60 80 100 120 0 140 I D, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 350 V DS=333V D=50% R G=2Ω T J=125°C T C=75°C ZVS 300 250 200 150 ZCS 100 Hard switching 50 0 20 30 40 50 60 5 10 15 20 25 Gate Resistance (Ohms) 400 Frequency (kHz) tf 20 0 Switching Energy (mJ) VDS=333V RG=2Ω T J=125°C L=100µH 100 tr and t f (ns) t d(on) and td(off) (ns) td(off) 70 80 1000 Source to Drain Diode Forward Voltage T J=150°C 100 10 TJ=25°C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM50DHM38G – Rev 3 July, 2006 ID, Drain Current (A)