APTM50HM75FT3G

APTM50HM75FT3G VDSS = 500V RDSon = 75m typ @ Tj = 25°C ID = 46A @ Tc = 25°C Full - Bridge MOSFET Power Module Application  Welding converters  Switched Mode Power Supplies  Uninterruptible Power Supplies Features  Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged  Kelvin source for easy drive  Very low stray inductance  Internal thermistor for temperature monitoring All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits  Outstanding performance at high frequency operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal for easy PCB mounting  Low profile  Each leg can be easily paralleled to achieve a phase leg of twice the current capability  RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 46 34 184 ±30 90 357 46 50 2500 Unit V A December, 2017 ID Parameter Drain - Source Voltage V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1–7 APTM50HM75FT3G – Rev 3 Symbol VDSS APTM50HM75FT3G Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 500V VGS = 10V, ID = 23A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V Min Typ 75 3 Max 100 90 5 ±150 Unit µA m V nA Max Unit Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Typ 5600 1200 90 pF 123 VGS = 10V VBus = 250V ID = 46A 33 nC 65 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 46A RG = 5 18 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 46A, RG = 5Ω 755 35 ns 87 77 µJ 726 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 46A, RG = 5Ω 1241 µJ 846 0.35 °C/W Source - Drain diode ratings and characteristics Reverse Recovery Time Qrr Reverse Recovery Charge Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 46A IS = - 46A VR = 333V diS/dt = 100A/µs Tj = 25°C 233 Tj = 125°C 499 Tj = 25°C 1.9 Tj = 125°C 5.7 Max 46 34 1.3 15 Unit A V V/ns ns µC December, 2017 trr Test Conditions  dv/dt numbers reflect the limitations of the circuit rather than the device itself. VR  VDSS Tj  150°C IS  - 46A di/dt  700A/µs www.microsemi.com 2–7 APTM50HM75FT3G – Rev 3 Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery  APTM50HM75FT3G Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To heatsink M4 Package Weight Min 4000 -40 -40 -40 -40 2 Max 150 TJmax - 25 125 125 3 110 Unit V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT  R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature   1 1  RT: Thermistor value at T exp B25 / 85     T25 T   See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com www.microsemi.com 3–7 APTM50HM75FT3G – Rev 3 December, 2017 Package outline (dimensions in mm) APTM50HM75FT3G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 0.9 0.3 0.7 0.25 0.5 0.2 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 160 Transfert Characteristics 8V VGS=10&15V 140 ID, Drain Current (A) 7.5V 120 100 7V 80 6.5V 60 40 6V 20 5.5V VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 100 80 60 40 TJ=25°C 20 TJ=125°C TJ=-55°C 0 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 RDS(on) vs Drain Current Normalized to VGS=10V @ 23A 1.15 3 4 5 6 7 8 DC Drain Current vs Case Temperature VGS=10V 1.10 1.05 2 50 ID, DC Drain Current (A) 1.20 1 VGS, Gate to Source Voltage (V) VGS=20V 1.00 0.95 0.90 0.85 0.80 40 30 20 10 0 0 20 40 60 80 100 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) December, 2017 ID, Drain Current (A) 10 120 180 RDS(on) Drain to Source ON Resistance 1 150 4–7 APTM50HM75FT3G – Rev 3 Thermal Impedance (°C/W) 0.4 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) ON resistance vs Temperature 2.5 VGS=10V ID=23A 2.0 1.5 1.0 0.5 0.0 -50 -25 75 100 125 150 Maximum Safe Operating Area 1.1 ID, Drain Current (A) 1.0 0.9 0.8 0.7 0.6 100 limited by R limited byDSon RDSon 10 100µs Single pulse TJ=150°C TC=25°C 1ms 10ms 1 0 25 50 75 100 125 150 1 TC, Case Temperature (°C) VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage Ciss 10000 Coss 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 VDS=100V ID=46A 12 T =25°C J V =250V DS 10 VDS=400V 8 6 4 2 0 50 www.microsemi.com 0 20 40 60 80 100 120 140 160 Gate Charge (nC) December, 2017 VGS(TH), Threshold Voltage (Normalized) 50 1000 -50 -25 C, Capacitance (pF) 25 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 100000 0 5–7 APTM50HM75FT3G – Rev 3 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50HM75FT3G APTM50HM75FT3G Delay Times vs Current Rise and Fall times vs Current 120 td(off) VDS=333V RG=5Ω TJ=125°C L=100µH 100 80 tr and tf (ns) VDS=333V RG=5Ω TJ=125°C L=100µH 60 40 td(on) 20 80 60 40 tr 20 0 0 10 20 30 40 50 60 70 10 ID, Drain Current (A) VDS=333V RG=5Ω TJ=125°C L=100µH 2 1.5 40 50 60 70 Switching Energy vs Gate Resistance Eon Eoff 1 30 4 Switching Energy (mJ) 0.5 VDS=333V ID=46A TJ=125°C L=100µH 3.5 3 2.5 Eoff 2 Eon 1.5 1 Eoff 0.5 0 0 10 20 30 40 50 60 0 70 ID, Drain Current (A) Operating Frequency vs Drain Current 300 ZCS 250 IDR, Reverse Drain Current (A) VDS=333V D=50% RG=5Ω TJ=125°C TC=75°C ZVS 200 150 100 hard switching 50 0 10 15 20 25 30 20 30 40 50 Gate Resistance (Ohms) 400 350 10 35 1000 100 Source to Drain Diode Forward Voltage TJ=150°C 10 TJ=25°C 1 40 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) ID, Drain Current (A) www.microsemi.com December, 2017 Switching Energy (mJ) 2.5 20 ID, Drain Current (A) Switching Energy vs Current Frequency (kHz) tf 6–7 APTM50HM75FT3G – Rev 3 td(on) and td(off) (ns) 100 APTM50HM75FT3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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