APTM50HM75FTG

APTM50HM75FTG Full - Bridge MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS Q3 Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration G3 S1 O UT1 S3 O UT2 Q2 Q4 G2 G4 S2 S4 NT C1 NT C2 0/VBUS G3 G4 S3 S4 VBUS 0/VBUS Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant OUT2 OUT1 S1 S2 NTC2 G1 G2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 46 34 184 ±30 90 357 46 50 2500 Unit V A V mΩ W A July, 2006 G1 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM50HM75FTG – Rev 2 Q1 VDSS = 500V RDSon = 75mΩ typ @ Tj = 25°C ID = 46A @ Tc = 25°C APTM50HM75FTG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Min VGS = 10V, ID = 23A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VSD dv/dt Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery X trr Reverse Recovery Time Qrr Reverse Recovery Charge 75 3 Min VGS = 10V VBus = 250V ID = 46A Typ 5600 1200 90 123 Unit Max Unit µA mΩ V nA pF nC 65 18 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 46A R G = 5Ω 35 77 755 µJ 726 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 46A, R G = 5Ω Test Conditions ns 87 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 46A, R G = 5Ω 1241 µJ 846 Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 46A IS = - 46A VR = 333V diS/dt = 100A/µs Max 100 500 90 5 ±100 33 Source - Drain diode ratings and characteristics Symbol IS Typ Tj = 25°C Tj = 125°C Tj = 25°C 233 Tj = 125°C 499 Tj = 25°C 1.9 Tj = 125°C 5.7 Max 46 34 1.3 15 Unit A V V/ns ns µC July, 2006 IDSS Characteristic X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 46A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com 2–6 APTM50HM75FTG – Rev 2 Symbol APTM50HM75FTG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 100 80 60 40 T J=25°C 20 TJ=125°C T J=-55°C 0 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 RDS(on) vs Drain Current Normalized to VGS=10V @ 23A 1.15 3 4 5 6 7 8 DC Drain Current vs Case Temperature VGS=10V 1.10 1.05 2 50 I D, DC Drain Current (A) 1.20 1 VGS, Gate to Source Voltage (V) V GS=20V 1.00 0.95 0.90 0.85 0.80 40 30 20 10 0 0 20 40 60 80 100 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 I D, Drain Current (A) 10 120 180 RDS(on) Drain to Source ON Resistance 1 4–6 APTM50HM75FTG – Rev 2 Thermal Impedance (°C/W) 0.4 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) ON resistance vs Temperature 2.5 VGS=10V ID=23A 2.0 1.5 1.0 0.5 0.0 -50 -25 50 75 100 125 150 Maximum Safe Operating Area 1000 1.1 ID, Drain Current (A) VGS (TH), Threshold Voltage (Normalized) 25 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 1.0 0.9 0.8 0.7 0.6 100 limited by R limited byDSon RDSon 10 100µs Single pulse TJ=150°C TC=25°C 1ms 10ms 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage VGS , Gate to Source Voltage (V) 100000 Ciss 10000 Coss 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 V DS =100V I D=46A 12 T =25°C J V =250V DS 10 VDS=400V 8 6 4 2 0 50 0 20 40 60 80 100 120 140 160 Gate Charge (nC) July, 2006 C, Capacitance (pF) 0 www.microsemi.com 5–6 APTM50HM75FTG – Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50HM75FTG APTM50HM75FTG Delay Times vs Current Rise and Fall times vs Current 120 td(off) 80 VDS=333V RG=5Ω TJ=125°C L=100µH 60 40 td(on) 20 60 40 tr 0 10 20 30 40 50 60 I D, Drain Current (A) 10 70 VDS=333V RG=5Ω TJ=125°C L=100µH 2 1.5 40 50 60 70 Switching Energy vs Gate Resistance Eon Eoff 1 30 4 Switching Energy (mJ) 2.5 20 I D, Drain Current (A) Switching Energy vs Current Switching Energy (mJ) 80 tf 20 0 0.5 VDS=333V ID=46A T J=125°C L=100µH 3.5 3 2.5 Eoff 2 Eon 1.5 1 Eoff 0.5 0 0 10 20 30 40 50 60 0 70 ID, Drain Current (A) Operating Frequency vs Drain Current V DS=333V D=50% R G=5Ω T J=125°C T C=75°C ZVS 300 ZCS 250 IDR, Reverse Drain Current (A) 350 200 150 100 hard switching 50 0 10 15 20 25 30 10 20 30 40 50 Gate Resistance (Ohms) 400 Frequency (kHz) VDS=333V RG=5Ω T J=125°C L=100µH 100 t r and tf (ns) t d(on) and td(off) (ns) 100 35 1000 100 Source to Drain Diode Forward Voltage TJ =150°C 10 TJ=25°C 1 40 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM50HM75FTG – Rev 2 July, 2006 ID, Drain Current (A)