APTM60H23UT1G
VDSS = 600V
RDSon = 230mΩ typ @ Tj = 25°C
ID = 20A @ Tc = 25°C
Full - Bridge
MOSFET Power Module
4
3
Q1
Q3
5
2
6
1
Q2
Q4
7
9
8
11
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
10
NTC
12
Features
• Power MOS 8™ Ultrafast FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Ultrafast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
•
•
•
•
•
•
•
Pins 3/4 must be shorted together
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
RoHS Compliant
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Tc = 25°C
Max ratings
600
20
15
125
±30
276
208
17
Unit
V
December, 2007
ID
Parameter
Drain - Source Breakdown Voltage
A
V
mΩ
W
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–5
APTM60H23UT1G – Rev 0
Symbol
VDSS
APTM60H23UT1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Tj = 25°C
VDS = 600V
VGS = 0V
Tj = 125°C
VGS = 10V, ID = 17A
VGS = VDS, ID = 1mA
VGS = ±30 V
Min
3
Typ
230
4
Max
250
1000
276
5
±100
Unit
Max
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
165
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 17A
Td(on)
Turn-on Delay Time
Resistive switching @ 25°C
VGS = 15V
VBus = 300V
ID = 17A
RG = 4.7Ω
37
Tr
Td(off)
Tf
Rise Time
Turn-off Delay Time
Fall Time
Min
Typ
5316
610
56
pF
nC
36
70
43
ns
115
34
Source - Drain diode ratings and characteristics
Symbol Characteristic
IS
Continuous Source current
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery X
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Min
Typ
Tj = 25°C
Max
20
15
1
30
200
Tj = 125°C
370
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 17A
IS = - 17A
VR = 100V
diS/dt = 100A/µs
Tj = 25°C
0.76
Tj = 125°C
1.91
Unit
A
V
V/ns
ns
µC
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2–5
APTM60H23UT1G – Rev 0
December, 2007
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 17A di/dt ≤ 1000A/µs VDD ≤ 400V Tj ≤ 125°C
APTM60H23UT1G
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
Junction to Case Thermal Resistance
Min
RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5
duty cycle
30
20
TJ=25°C
10
0
50
75
100
125
150
0
1
3
4
5
6
7
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source
Capacitance vs Drain to Source Voltage
100000
12
VDS=300V
8
6
VDS=480V
4
2
0
Ciss
10000
1000
Coss
100
10
Crss
1
0
25
50
75
100
125
150
175
0
50
100
150
200
VDS, Drain to Source Voltage (V)
Gate Charge (nC)
www.microsemi.com
4–5
December, 2007
C, Capacitance (pF)
VDS=120V
ID=17A
TJ=25°C
10
2
APTM60H23UT1G – Rev 0
25
TJ, Junction Temperature (°C)
VGS, Gate to Source Voltage
15
Transfert Characteristics
Normalized RDSon vs. Temperature
2.5
10
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
RDSon, Drain to Source ON resistance
VDS, Drain to Source Voltage (V)
APTM60H23UT1G
ISD, Reverse Drain Current (A)
Drain Current vs Source to Drain Voltage
60
50
40
TJ=125°C
30
20
TJ=25°C
10
0
0
0.2
0.4
0.6
0.8
1
1.2
VSD, Source to Drain Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.7
0.6
0.5
0.9
0.7
0.4
0.5
0.3
0.2
0.1
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5–5
APTM60H23UT1G – Rev 0
December, 2007
rectangular Pulse Duration (Seconds)
