APTMC120AM12CT3AG

APTMC120AM12CT3AG VDSS = 1200V RDSon = 12mΩ max @ Tj = 25°C ID = 220A* @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET - High speed switching - Low RDS(on) - Ultra low loss • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • • • • Very low stray inductance Kelvin source for easy drive Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance Pins 25 to 28 must be shorted together Pins 13 to 16 must be shorted together Pins 18/19/20/22 must be shorted together All ratings @ Tj = 25°C unless otherwise specified These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-8 APTMC120AM12CT3AG – Rev 1 October, 2014 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant APTMC120AM12CT3AG Absolute maximum ratings (per SiC MOSFET) Symbol VDSS ID IDM VGS RDSon PD Parameter Max ratings 1200 220* 165* 440 -10/25V 12 925 Drain - Source Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Tc = 25°C Unit V A V mΩ W * Specification of device but current must be limited due to size of pins. Electrical Characteristics (per SiC MOSFET) Symbol Characteristic Zero Gate Voltage Drain Current IDSS RDS(on) Drain – Source on Resistance VGS(th) IGSS Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V , VDS = 1200V Tj = 25°C VGS = 20V ID = 150A Tj = 150°C VGS = VDS, ID = 30mA VGS = 20 V, VDS = 0V Min Typ 2.1 8 14 2.4 Max 300 12 21 Unit µA mΩ 1.8 V µA Max Unit Dynamic Characteristics (per SiC MOSFET) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy RGint Internal gate resistance RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 1000V f = 1MHz Min VGS = -5/+20V VBus = 800V ID = 150A VGS = -5/+20V VBus = 800V ID =150A , TJ =150°C RL = 5.3Ω ; RGext = 6.7Ω Inductive Switching VGS = -5/+20V VBus = 600V ID = 150A RGext = 6.7Ω Typ 8.4 0.66 0.045 483 138 150 35 nF nC 40 ns 150 70 Tj = 150°C 3.3 mJ Tj = 150°C 1.8 Ω 2 0.135 °C/W Max Unit Body diode ratings and characteristics (per SiC MOSFET) Symbol Characteristic VSD Diode Forward Voltage trr Qrr Irr Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions VGS = -5V, ISD = 75A VGS = -2V, ISD = 75A ISD = 150A ; VGS = -5V VR = 800V ; diF/dt = 3000A/µs www.microsemi.com Min Typ 3.3 3.1 45 1.2 40 V ns µC A 2-8 APTMC120AM12CT3AG – Rev 1 October, 2014 Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) APTMC120AM12CT3AG SiC schottky diode ratings and characteristics (per SiC diode) Symbol Characteristic VRRM Test Conditions Min Peak Repetitive Reverse Voltage VR=1200V Tj = 25°C Tj = 175°C DC Forward Current Tc = 125°C VF Diode Forward Voltage IF = 60A Tj = 25°C Tj = 175°C QC Total Capacitive Charge C Total Capacitance IRRM IF RthJC Typ Reverse Leakage Current 105 195 60 1.5 2.2 IF = 60A, VR = 1200V di/dt =1500A/µs 390 f = 1MHz, VR = 400V 279 f = 1MHz, VR = 800V 201 Max Unit 1200 600 1200 V µA A 1.8 3 V nC pF Junction to Case Thermal Resistance 0.37 °C/W Temperature sensor NTC (see application note APT0406 on www.microsemi.com). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ T T ⎝ 25 ⎠⎦ ⎣ Thermal and package characteristics www.microsemi.com Min 4000 -40 -40 -40 -40 -40 2 Max 150 175 TJmax -25 125 100 3 110 Unit V °C N.m g 3-8 APTMC120AM12CT3AG – Rev 1 October, 2014 Symbol Characteristic VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz SiC MOSFET TJ Operating junction temperature range SiC diode TJOP Recommended junction temperature under switching conditions TSTG Storage Temperature Range TC Operating Case Temperature Torque Mounting torque To heatsink M4 Wt Package Weight APTMC120AM12CT3AG Package outline (dimensions in mm) www.microsemi.com 4-8 APTMC120AM12CT3AG – Rev 1 October, 2014 See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com APTMC120AM12CT3AG Typical SiC MOSFET Performance Curve Output Characteristics Output Characteristics 300 TJ=2 5 °C 250 IDS , Drain Source Current (A) IDS, Drain Source Current (A) 300 VGS =20V 200 VGS=15V 150 100 50 0 0 1 2 3 4 5 TJ=1 50 °C 250 VGS=20V 200 VGS =15V 150 100 50 0 0 VDS, Drain Source Voltage (V) IDS, Drain Source Current (A) RDSon, Drain Source ON resistance VGS=20V I D=150A 1.25 1 0.75 50 75 100 125 4 5 6 7 250 200 150 TJ=150°C 100 50 TJ=25°C 0 150 2 TJ, Junction Temperature (°C) 4 6 8 10 12 VGS, Gate Source Voltage (V) Switching energy vs Rg switching energy vs current 5 8 4 3 VGS=-5/20V I D= 150A VBUS = 600V TJ = 150 °C Eoff 2 1 6 8 10 VGS=-5/20V R G=6.7Ω VBUS= 600V TJ = 150 °C 6 Eon Losses (mJ) Losses (mJ) 3 300 1.75 25 2 Transfert Characteristics Normalized RDS(on) vs. Temperature 1.5 1 VDS , Drain Source Voltage (V) 12 14 16 18 Eon 4 Eoff 2 0 20 0 50 100 Gate resistance (ohm) 150 200 250 300 Current (A) 0.12 0.1 0.08 D = 0.9 0.7 0.5 0.06 0.04 0.02 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 5-8 APTMC120AM12CT3AG – Rev 1 October, 2014 Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.14 APTMC120AM12CT3AG Gate Charge vs Gate Source Voltage Capacitance vs Drain Source Voltage 20 VGS, Gate to Source Voltage (V) C, Capacitance (pF) 100000 Ciss 10000 Coss 1000 100 Crss 10 0 200 400 600 800 TJ = 25 °C I D = 150A VDS = 800V 15 10 5 0 -5 1000 0 VDS, Drain source Voltage (V) Body diode Characteristics 300 400 500 Output Characteristics 300 ISD, Source drain current (A) ISD, Body diode current (A) 200 Gate Charge (nC) 300 TJ=2 5 °C 250 200 150 VGS=-2V 100 VGS=0V 50 VGS=-5V TJ=2 5 °C 250 VGS=20V 200 VGS=15V 150 100 VGS=5V 50 VGS=0V 0 0 1 1.5 2 2.5 3 3.5 4 0 4.5 0.5 1 1.5 2 2.5 3 3.5 4 VSD, Source drain voltage (V) VSD, Source drain voltage (V) Body diode Characteristics Output Characteristics 300 ISD, Source drain current (A) 300 ISD, Body diode current (A) 100 TJ=1 50 °C 250 200 150 VGS=-2V 100 VGS=0V 50 VGS=-5V 0 0.5 1 1.5 2 2.5 3 3.5 4 TJ=1 50 °C 250 VGS=20V 200 VGS=15V 150 100 VGS=5V 50 VGS=0V 0 0 VSD, Source drain voltage (V) 0.5 1 1.5 2 2.5 3 3.5 4 VSD, Source drain voltage (V) Frequency (kHz) 600 VBUS=600V D=50% R G =6.7Ω TJ=1 50 °C TC =75 °C ZVS 500 400 ZCS 300 200 100 Hard switching 0 40 80 120 160 200 240 ID, Drain Current (A) www.microsemi.com 6-8 APTMC120AM12CT3AG – Rev 1 October, 2014 Operating Frequency vs Drain Current 700 APTMC120AM12CT3AG Typical SiC diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 D = 0.9 Thermal Impedance (°C/W) 0.35 0.3 0.7 0.25 0.5 0.2 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 1.6 TJ=25°C IR Reverse Current (mA) IF Forward Current (A) 120 90 60 TJ=125°C 30 TJ=175°C 1.2 TJ=175°C 0.8 TJ=125°C 0.4 TJ=25°C 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 900 VF Forward Voltage (V) 1100 1300 1500 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage 4 3 2 1 0 0.1 1 10 100 1000 VR Reverse Voltage www.microsemi.com 7-8 APTMC120AM12CT3AG – Rev 1 October, 2014 C, Capacitance (nF) 5 APTMC120AM12CT3AG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp Life Support Application Seller's Products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the Seller's Product could create a situation where personal injury, death or property damage or loss may occur (collectively "Life Support Applications"). Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations that Seller was negligent regarding the design or manufacture of the goods. www.microsemi.com 8-8 APTMC120AM12CT3AG – Rev 1 October, 2014 Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the new proposed specific part.