APTMC120AM20CT1AG

APTMC120AM20CT1AG Phase leg SiC MOSFET Power Module VDSS = 1200V RDSon = 17mΩ max @ Tj = 25°C ID = 143A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET - Low RDS(on) - High temperature performance • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • • • Very low stray inductance Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance Benefits • • • • Pins 1/2 ; 3/4 ; 5/6 must be shorted together • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified 1. SiC MOSFET characteristics (Per MOSFET) IDM VGS RDSon PD Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Tc = 25°C Max ratings 1200 143 108 280 -10/+25 17 600 Unit V June, 2013 ID Parameter Drain - Source Breakdown Voltage A V mΩ W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTMC120AM20CT1AG – Rev 1 Symbol VDSS APTMC120AM20CT1AG Electrical Characteristics Symbol Characteristic IDSS Zero Gate Voltage Drain Current RDS(on) Drain – Source on Resistance VGS(th) IGSS Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V , VDS = 1200V Tj = 25°C VGS = 20V ID = 100A Tj = 150°C VGS = VDS, ID = 2mA VGS = 20 V, VDS = 0V Min 1.9 Typ 20 12.5 22 2.3 Max 200 17 32 1 Unit µA mΩ V µA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 1000V f = 1MHz Min Unit pF 64 nC 126 21 VGS = -2/+20V VBus = 800V ID = 100A RL = 8Ω ; RG = 10Ω VGS = -5/+20V VBus = 600V ID = 100A RG = 10Ω Max 360 VGS = -2/+20V VBus = 800V ID =100A Inductive Switching Typ 5960 440 46 19 ns 50 30 Tj = 150°C 2.2 Tj = 150°C 1.2 mJ 0.21 °C/W Typ Max Unit V 70 130 40 1.5 2.2 400 800 2. SiC diode characteristics (Per SiC diode) IF Maximum Reverse Leakage Current DC Forward Current VF Diode Forward Voltage QC Total Capacitive Charge C Total Capacitance RthJC VR=1200V Min 1200 Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C IF = 40A Tj = 175°C IF = 40A, VR = 1200V di/dt = 1000A/µs 186 f = 1MHz, VR = 400V 134 Junction to Case Thermal Resistance A 1.8 3 260 f = 1MHz, VR = 200V V nC pF 0.7 www.microsemi.com µA June, 2013 IRM Test Conditions °C/W 2–6 APTMC120AM20CT1AG – Rev 1 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTMC120AM20CT1AG 3. Thermal and package characteristics Package characteristics Symbol Characteristic VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz SiC MOSFET TJ Operating junction temperature range SiC diode TJOP TSTG TC Torque Wt Min 4000 -40 -40 Recommended junction temperature under switching conditions -40 Storage Temperature Range Operating Case Temperature Mounting torque Package Weight -40 -40 2 To heatsink M4 Typ Max 150 175 TJmax -25 125 125 3 80 Unit V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R 25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp⎢ B 25 / 85 ⎜⎜ − ⎟⎟⎥ ⎢⎣ ⎝ T25 T ⎠⎥⎦ See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTMC120AM20CT1AG – Rev 1 June, 2013 SP1 Package outline (dimensions in mm) APTMC120AM20CT1AG 4. Typical Performance Curves SiC MOSFET Output Characteristics Output Characteristics 200 200 TJ=1 50 °C 20 120 160 ID, Drain Current (A) ID, Drain Current (A) TJ=2 5 °C 160 VGS =15V 80 40 20 120 80 40 0 0 1 2 3 4 VGS =15V 0 5 0 2 3 4 VGS=20V 1.25 1 80 TJ=150°C 60 40 0.75 75 100 125 7 100 TJ=25°C 20 50 6 120 1.5 25 5 Transfert Characteristics Normalized RDS(on) vs. Temperature 1.75 0 150 0 T J, Junction Temperature (°C) 2 4 6 8 10 VGS , Gate to Source Voltage (V) Switching energy vs Rg switching energy vs current 4 5 Eon 2 Eoff 1 VGS=-5/20V I D= 100A VBUS = 600V TJ = 150 °C 15 20 25 3 Eon 2 Eoff 1 0 10 VGS=-5/20V R G =10Ω VBUS= 600V TJ = 150 °C 4 Losses (mJ) 3 Losses (mJ) 1 VDS , Drain to Source Voltage (V) ID, Drain Current (A) RDSon, Drain to Source ON resistance VDS , Drain to Source Voltage (V) 0 30 0 40 Gate resistance (ohm) 80 120 160 200 Current (A) 0.15 0.1 June, 2013 0.2 D = 0.9 0.7 0.5 0.3 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4–6 APTMC120AM20CT1AG – Rev 1 Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.25 APTMC120AM20CT1AG Gate Charge vs Gate to Source Voltage 20 Capacitance vs Drain to Source Voltage VGS , Gate to Source Voltage (V) 10000 C, Capacitance (pF) Ciss 1000 Coss 100 Crss 10 0 200 400 600 800 VGS = 20V I D = 100A VDS = 800V 16 12 8 4 0 1000 0 VDS , Drain to Source Voltage (V) 60 120 180 240 300 360 Gate Charge (nC) Operating Frequency vs Drain Current 700 VBUS=600V D=50% R G =10Ω TJ=1 50 °C TC =75 °C 600 Frequency (kHz) ZVS 500 400 ZCS 300 200 100 Hard switching 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) SiC diode Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.8 Thermal Impedance (°C/W) 0.7 D = 0.9 0.6 0.7 0.5 0.5 0.4 0.3 0.3 0.2 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 200 TJ=25°C 70 IR Reverse Current (µA) 60 TJ=75°C 50 40 30 TJ=125°C 20 TJ=175°C 10 150 TJ=175°C 100 TJ=75°C TJ=125°C 50 TJ=25°C 0 0 0.5 1 1.5 2 2.5 3 3.5 0 600 1000 1200 1400 1600 VR Reverse Voltage (V) June, 2013 VF Forward Voltage (V) 800 Capacitance vs.Reverse Voltage C, Capacitance (pF) 1200 900 600 300 0 1 10 100 1000 VR Reverse Voltage www.microsemi.com 5–6 APTMC120AM20CT1AG – Rev 1 IF Forward Current (A) 80 APTMC120AM20CT1AG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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