APTMC120TAM17CTPAG

APTMC120TAM17CTPAG VDSS = 1200V RDSon = 17mΩ max @ Tj = 25°C ID = 147A @ Tc = 25°C Triple phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET - High speed switching - Low RDS(on) - Ultra low loss • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • • • • Very low stray inductance Kelvin source for easy drive Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance All ratings @ Tj = 25°C unless otherwise specified These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-8 APTMC120TAM17CTPAG – Rev 0 May, 2014 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant APTMC120TAM17CTPAG Absolute maximum ratings (per SiC MOSFET) Symbol VDSS ID IDM VGS RDSon PD Parameter Max ratings 1200 147 110 300 -10/25V 17 625 Drain - Source Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Tc = 25°C Unit V A V mΩ W Electrical Characteristics (per SiC MOSFET) Symbol Characteristic Zero Gate Voltage Drain Current IDSS RDS(on) Drain – Source on Resistance VGS(th) IGSS Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V , VDS = 1200V Tj = 25°C VGS = 20V ID = 100A Tj = 150°C VGS = VDS, ID = 20mA VGS = 20 V, VDS = 0V Min Typ 2.1 12.5 22 2.4 Max 200 17 32 Unit µA mΩ 1.2 V µA Max Unit Dynamic Characteristics (per SiC MOSFET) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn on Energy Eoff Turn off Energy RGint Internal gate resistance RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 1000V f = 1MHz Min VGS = -5/+20V VBus = 800V ID = 100A VGS = -5/+20V VBus = 800V ID =100A , TJ =150°C RL = 8Ω ; RGext = 10Ω Inductive Switching VGS = -5/+20V VBus = 600V ID = 100A RGext = 10Ω Typ 5.6 0.44 0.03 322 92 100 35 nF nC 40 ns 150 70 Tj = 150°C 2.2 Tj = 150°C 1.2 mJ Ω 3 0.2 °C/W Source - Drain diode ratings and characteristics (per SiC MOSFET) Symbol Characteristic VSD Diode Forward Voltage trr Qrr Irr Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions VGS = -5V, ISD = 50A VGS = -2V, ISD = 50A ISD = 100A ; VGS = -5V VR = 800V ; diF/dt = 2000A/µs www.microsemi.com Min Typ 3.3 3.1 45 0.8 26 Max Unit V ns µC A 2-8 APTMC120TAM17CTPAG – Rev 0 May, 2014 Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) APTMC120TAM17CTPAG SiC schottky diode ratings and characteristics (per SiC diode) Symbol Characteristic VRRM Test Conditions Min Peak Repetitive Reverse Voltage VR=1200V Tj = 25°C Tj = 175°C DC Forward Current Tc = 125°C VF Diode Forward Voltage IF = 40A Tj = 25°C Tj = 175°C QC Total Capacitive Charge C Total Capacitance IRRM IF RthJC Typ Reverse Leakage Current 70 130 40 1.5 2.2 IF = 40A, VR = 1200V di/dt =1000A/µs 260 f = 1MHz, VR = 400V 186 f = 1MHz, VR = 800V 134 Max Unit 1200 400 800 V µA A 1.8 3 V nC pF Junction to Case Thermal Resistance 0.55 °C/W Temperature sensor NTC (see application note APT0406 on www.microsemi.com). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ T T ⎝ 25 ⎠⎦ ⎣ Thermal and package characteristics www.microsemi.com Min 4000 -40 -40 -40 -40 -40 3 Max 150 175 TJmax -25 125 100 5 250 Unit V °C N.m g 3-8 APTMC120TAM17CTPAG – Rev 0 May, 2014 Symbol Characteristic VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz SiC MOSFET TJ Operating junction temperature range SiC diode TJOP Recommended junction temperature under switching conditions TSTG Storage Temperature Range TC Operating Case Temperature Torque Mounting torque To heatsink M6 Wt Package Weight APTMC120TAM17CTPAG Package outline (dimensions in mm) www.microsemi.com 4-8 APTMC120TAM17CTPAG – Rev 0 May, 2014 See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTMC120TAM17CTPAG Typical SiC MOSFET Performance Curve Output Characteristics Output Characteristics 200 TJ=2 5 °C 175 150 IDS, Drain Source Current (A) IDS, Drain Source Current (A) 200 VGS=20V 125 VGS =15V 100 75 50 25 0 0 1 2 3 4 5 TJ=1 50 °C 175 150 VGS=20V 125 VGS=15V 100 75 50 25 0 0 VDS, Drain Source Voltage (V) IDS, Drain Source Current (A) RDSon, Drain Source ON resistance 1.25 1 0.75 50 75 100 125 4 5 6 7 175 150 125 100 TJ=150°C 75 50 TJ=25°C 25 0 150 2 TJ, Junction Temperature (°C) 4 6 8 10 12 VGS , Gate Source Voltage (V) Switching energy vs Rg switching energy vs current 3 5 2.5 2 1.5 VGS=-5/20V R G =10Ω VBUS= 600V TJ = 150 °C 4 Eon Losses (mJ) Losses (mJ) 3 200 VGS=20V I D=100A 25 2 Transfert Characteristics Normalized RDS(on) vs. Temperature 1.75 1.5 1 VDS, Drain Source Voltage (V) Eoff VGS=-5/20V I D= 100A VBUS = 600V TJ = 150 °C 3 Eon 2 Eoff 1 1 0 10 12.5 15 17.5 20 22.5 25 27.5 30 0 25 50 75 100 125 150 175 200 Gate resistance (ohm) Current (A) 0.2 0.15 0.1 D = 0.9 0.7 0.5 0.3 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 5-8 APTMC120TAM17CTPAG – Rev 0 May, 2014 Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration APTMC120TAM17CTPAG Gate Charge vs Gate Source Voltage Capacitance vs Drain Source Voltage 20 10000 Ciss 1000 Coss 100 VGS , Gate to Source Voltage (V) C, Capacitance (pF) 100000 Crss 10 0 200 400 600 800 TJ = 25 °C I D = 100A VDS = 800V 15 10 5 0 -5 1000 0 VDS , Drain source Voltage (V) Body diode Characteristics Output Characteristics 200 ISD, Source drain current (A) ISD, Body diode current (A) 100 150 200 250 300 350 Gate Charge (nC) 200 TJ=2 5 °C 150 100 VGS=-2V VGS=0V 50 VGS=-5V TJ=2 5 °C 150 VGS=20V VGS=15V 100 50 VGS=5V VGS=0V 0 0 1 1.5 2 2.5 3 3.5 4 0 4.5 0.5 1 1.5 2 2.5 3 3.5 4 VSD, Source drain voltage (V) VSD, Source drain voltage (V) Body diode Characteristics Output Characteristics 200 ISD, Source drain current (A) 200 ISD, Body diode current (A) 50 TJ=1 50 °C 175 150 125 100 75 VGS=-2V 50 VGS=0V 25 VGS=-5V 0 0.5 1 1.5 2 2.5 3 3.5 4 TJ=1 50 °C 175 VGS=20V 150 125 VGS=15V 100 75 50 VGS=5V 25 VGS=0V 0 0 VSD, Source drain voltage (V) 0.5 1 1.5 2 2.5 3 3.5 4 VSD, Source drain voltage (V) Frequency (kHz) 600 VBUS=600V D=50% R G =10Ω TJ=1 50 °C TC =75 °C ZVS 500 400 ZCS 300 200 100 Hard switching 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) www.microsemi.com 6-8 APTMC120TAM17CTPAG – Rev 0 May, 2014 Operating Frequency vs Drain Current 700 APTMC120TAM17CTPAG www.microsemi.com 7-8 APTMC120TAM17CTPAG – Rev 0 May, 2014 Typical SiC diode Performance Curve APTMC120TAM17CTPAG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp Life Support Application Seller's Products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the Seller's Product could create a situation where personal injury, death or property damage or loss may occur (collectively "Life Support Applications"). Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations that Seller was negligent regarding the design or manufacture of the goods. www.microsemi.com 8-8 APTMC120TAM17CTPAG – Rev 0 May, 2014 Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the new proposed specific part.