APTMC60TL11CT3AG

APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 98mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS(on) - High temperature performance • • • • • • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring AlN substrate for improved thermal performance Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant All multiple inputs and outputs must be shorted together 10/11/12 ; 7/8 ; 27/28 ; … All ratings @ Tj = 25°C unless otherwise specified Q1 to Q4 Absolute maximum ratings (per SiC MOSFET) IDM VGS RDSon PD Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Tc = 25°C Max ratings 1200 28 21 55 -10/+25 98 125 Unit V July, 2013 ID Parameter Drain - Source Breakdown Voltage A V mΩ W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-8 APTMC60TL11CT3AG – Rev 2 Symbol VDSS APTMC60TL11CT3AG Q1 to Q4 Electrical Characteristics (per SiC MOSFET) Symbol Characteristic IDSS Zero Gate Voltage Drain Current RDS(on) Drain – Source on Resistance VGS(th) IGSS Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V , VDS = 1200V Tj = 25°C VGS = 20V ID = 20A Tj = 150°C VGS = VDS, ID = 1mA VGS = 20 V, VDS = 0V Min 1.7 Typ 12 80 150 2.2 Max 100 98 208 Unit µA mΩ 250 V nA Max Unit Q1 to Q4 Dynamic Characteristics (per SiC MOSFET) Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn on Energy Eoff Turn off Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 1000V f = 1MHz Min VGS = 20V VBus = 800V ID = 20A VGS = -2/+20V VBus = 800V ID = 20A RL = 40Ω ; RG = 50Ω Inductive Switching VGS = -5/+20V VBus = 600V ID = 20A RG = 50Ω Typ 950 80 6.5 49 11 18 12 pF nC 14 ns 23 18 Tj = 150°C 0.45 Tj = 150°C 0.25 mJ 1 °C/W Typ Max Unit V 10 20 10 1.6 2 60 300 CR5 & CR6 SiC diode ratings and characteristics (Per SiC diode) IF Maximum Reverse Leakage Current DC Forward Current VF Diode Forward Voltage QC Total Capacitive Charge C Total Capacitance RthJC VR= 600V Min 600 Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C IF = 10A Tj = 175°C IF = 10A, VR = 600V di/dt =500A/µs 65 f = 1MHz, VR = 400V 50 Junction to Case Thermal Resistance A 1.8 2.4 28 f = 1MHz, VR = 200V V nC pF 2.2 www.microsemi.com µA July, 2013 IRM Test Conditions °C/W 2-8 APTMC60TL11CT3AG – Rev 2 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTMC60TL11CT3AG CR7 & CR8 diode ratings and characteristics (Per SiC diode) Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage QC Total Capacitive Charge C Total Capacitance RthJC VR=1200V Min 1200 Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C Tj = 175°C IF = 20A, VR = 1200V di/dt =1000A/µs IF = 20A Typ Max 64 112 20 1.6 2.3 400 2000 192 f = 1MHz, VR = 400V 138 Junction to Case Thermal Resistance µA A 1.8 3 160 f = 1MHz, VR = 200V Unit V V nC pF 0.8 °C/W Temperature sensor NTC (see application note APT0406 on www.microsemi.com ). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R 25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp⎢ B 25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦⎥ ⎣⎢ Thermal and package characteristics Symbol Characteristic VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz SiC MOSFET TJ Operating junction temperature range SiC Diode -40 Storage Temperature Range Operating Case Temperature Mounting torque Package Weight -40 -40 2 To heatsink M4 Max 150 175 TJmax -25 125 125 3 110 Unit V °C N.m g July, 2013 TSTG TC Torque Wt Recommended junction temperature under switching conditions Typ www.microsemi.com 3-8 APTMC60TL11CT3AG – Rev 2 TJOP Min 4000 -40 -40 APTMC60TL11CT3AG SP3 Package outline (dimensions in mm) See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com Q1 to Q4 Typical performance curve Gate Charge vs Gate to Source Voltage 20 Capacitance vs Drain to Source Voltage VGS , Gate to Source Voltage (V) C, Capacitance (pF) 10000 Ciss 1000 Coss 100 Crss 10 1 0 200 400 600 800 1000 VGS = 20V I D = 20A VDS = 800V 16 12 8 4 0 VDS , Drain to Source Voltage (V) 0 10 20 30 40 50 Gate Charge (nC) Operating Frequency vs Drain Current 700 500 400 300 ZCS 200 100 0 Hard switching 10 15 20 25 30 ID, Drain Current (A) www.microsemi.com 4-8 APTMC60TL11CT3AG – Rev 2 Frequency (kHz) ZVS July, 2013 VBUS=600V D=50% R G =50Ω TJ=1 50 °C TC =75 °C 600 APTMC60TL11CT3AG Output Characteristics Output Characteristics 30 40 30 TJ=150°C 20 25 ID, Drain Current (A) ID, Drain Current (A) TJ=25°C 10 VGS=20V 20 10V 15 10 5 TJ=1 50 °C VGS=20V 0 0 0 1 2 3 4 5 6 7 0 8 6 8 Transfert Characteristics Normalized RDS(on) vs. Temperature 25 2 VGS=20V I D=20A 1.75 20 1.5 1.25 1 15 10 TJ=25°C 5 0.75 25 50 75 100 125 TJ=150°C 0 150 2 4 6 8 10 12 14 VGS, Gate to Source Voltage (V) TJ, Junction Temperature (°C) inductive switching energy vs RG Inductive switching energy vs current 0.6 1.0 Switching Energy (mJ) Eon 0.5 Switching Energy (mJ) 4 VDS, Drain to Source Voltage (V) ID, Drain Current (A) RDSon, Drain to Source ON resistance VDS, Drain to Source Voltage (V) 2 0.4 Eoff 0.3 0.2 VGS=-5/20V I D=20A VBUS=600V TJ=1 50 °C 0.1 62.5 75 87.5 0.6 Eon 0.4 Eoff 0.2 0.0 0.0 50 VGS=-5/20V R G =50Ω VBUS=600V TJ=1 50 °C 0.8 0 100 112.5 125 5 10 15 20 25 30 35 40 Drain current (A) Gate Resistance (Ohms) 0.9 0.8 0.7 0.6 0.4 0.2 July, 2013 1 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 5-8 APTMC60TL11CT3AG – Rev 2 Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 APTMC60TL11CT3AG CR5 & CR6 Typical performance curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 2.5 Thermal Impedance (°C/W) 0.9 2 0.7 1.5 0.5 1 0.3 0.5 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 200 TJ=25°C 15 IR Reverse Current (µA) IF Forward Current (A) 20 TJ=75°C TJ=175°C 10 TJ=125°C 5 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) TJ=175°C 160 120 TJ=125°C TJ=75°C 80 TJ=25°C 40 0 200 300 400 500 600 700 800 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage 400 300 250 200 150 100 July, 2013 50 0 1 10 100 1000 VR Reverse Voltage www.microsemi.com 6-8 APTMC60TL11CT3AG – Rev 2 C, Capacitance (pF) 350 APTMC60TL11CT3AG CR7 & CR8 Typical performance curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1 0.8 D = 0.9 0.6 0.7 0.5 0.4 0.3 0.2 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 40 200 30 TJ=75°C 20 TJ=125°C 10 TJ=175°C IR Reverse Current (µA) IF Forward Current (A) TJ=25°C 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) 150 TJ=175°C 100 TJ=75°C TJ=125°C 50 TJ=25°C 0 400 600 800 1000 1200 1400 1600 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage 1400 1000 800 600 400 July, 2013 200 0 1 10 100 1000 VR Reverse Voltage www.microsemi.com 7-8 APTMC60TL11CT3AG – Rev 2 C, Capacitance (pF) 1200 APTMC60TL11CT3AG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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