ARF460BG

ARF460A/G ARF460B/G 125V, 150W, 65MHz RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE TO -2 47 Common Source The ARF460A and ARF460B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65MHz. They have been optimized for both linear and high efficiency classes of operation. • Specified 125 Volt, 40.68MHz Characteristics: • Low Cost Common Source RF Package. Output Power = 150 Watts. • Low Vth thermal coefficient. Gain = 13dB (Class AB) • Low Thermal Resistance. Efficiency = 75% (Class C) • Optimized SOA for Superior Ruggedness • RoHS Compliant Maximum Ratings Symbol All Ratings: TC =25°C unless otherwise specified Parameter ARF460AG/BG VDSS Drain-Source Voltage 500 VDGO Drain-Gate Voltage 500 Continuous Drain Current @ TC = 25°C 14 ID Unit V A VGS Gate-Source Voltage ±30 V PD Total Power Dissipation @ TC = 25°C 250 W Junction to Case 0.50 °C/W RθJC TJ, TSTG TL Operating and Storage Junction Temperature Range -55 to 150 Lead Temperature: 0.063” from Case for 10 Sec. °C 300 Static Electrical Characteristics Parameter Min BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) VDS(ON) On State Drain Voltage 1 Typ Max 500 (ID(ON) = 7A, VGS = 10V) 4 Unit V Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 0.8VDSS, VGS = 0, TC = 125°C) 250 IGSS Gate-Source Leakage Current (VDS = ±30V, VDS = 0V) ±100 nA gfs Forward Transconductance (VDS = 25V, ID = 7A) 3.3 8 mhos VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 3 5 Volts IDSS 5.5 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Downloaded from Elcodis.com electronic components distributor μA 050-5966 Rev E 10-2007 Symbol Dynamic Characteristics Symbol ARF460AG/BG Parameter Test Conditions CISS Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Min Typ Max VGS = 0V 1200 1400 VDS = 150V 150 180 f = 1MHz 60 75 VGS = 15V 7 Unit pF VDD = 0.5VDSS 6 ID =ID[Cont.] @ 25°C 20 RG = 1.6Ω 4.0 7 Min Typ Max f = 40.68MHz 13 15 dB Idq = 50mA VDD = 125V 70 75 % ns Functional Characteristics Symbol Characteristic GPS Test Conditions Common Source Amplifier Power Gain η Drain Efficiency Ψ Electrical Ruggedness VSWR 10:1 POUT = 150W Unit No Degradation in Output Power 1. Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 5000 Ciss CAPACITANCE (pf) 1000 Coss 500 Crss 100 50 10 .1 .5 1 5 10 50 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 050-5966 Rev E 10-2007 12 TJ = -55°C VDS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @