ARF463A(G)
ARF463B(G)
D
G
S
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
TO-247
Common
Source
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
125V
100W
100MHz
The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been
optimized for both linear and high efficiency classes of operation.
• Specified 125 Volt, 81.36 MHz Characteristics:
•
Output Power = 100 Watts.
•
Gain = 15dB (Class AB)
•
Efficiency = 75% (Class C)
• Low Cost Common Source RF Package.
• Low Vth thermal coefficient.
• Low Thermal Resistance.
• Optimized SOA for Superior Ruggedness.
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
ARF463A/B(G)
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
UNIT
500
Volts
9
Amps
VGS
Gate-Source Voltage
±30
Volts
PD
Total Power Dissipation @ TC = 25°C
180
Watts
Junction to Case
0.70
°C/W
RθJC
TJ,TSTG
TL
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
VDS(ON)
IDSS
IGSS
gfs
VGS(TH)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
500
On State Drain Voltage
1
TYP
MAX
Volts
(I D(ON) = 4.5A, VGS = 10V)
5.0
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
25
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
250
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
Forward Transconductance (VDS = 25V, ID = 4.5A)
4
Gate Threshold Voltage (VDS = VGS, ID = 50mA)
3
6
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
nA
mhos
5
Volts
6-2003
BVDSS
Characteristic / Test Conditions
050-5998 Rev B
Symbol
ARF463A/B(G)
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-on Delay Time
tr
td(off)
tf
MIN
TYP
MAX
1200
1600
VDS = 50V
140
200
f = 1 MHz
9
12
VGS = 15V
5.1
10
VDD = 0.5 VDSS
4.1
8
ID = ID[Cont.] @ 25°C
12.8
20
RG = 1.6Ω
4
8
MAX
VGS = 0V
Rise Time
Turn-off Delay Time
Fall Time
UNIT
pF
ns
FUNCTIONAL CHARACTERISTICS
Symbol
GPS
η
ψ
Characteristic
Common Source Amplifier Power Gain
Test Conditions
MIN
TYP
f = 81.36 MHz
13
15
dB
60
65
%
Idq = 50mA
Drain Efficiency
Electrical Ruggedness VSWR 10:1
VDD = 125V
Pout = 100W
UNIT
No Degradation in Output Power
1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
3000
30
Class C
VDD = 150V
25
CAPACITANCE (pf)
20
GAIN (dB)
Ciss
1000
Pout = 150W
15
10
500
Coss
100
50
5
Crss
0
30
10
.1
.5
1
5
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
45
60
75
90
105
120
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
10
36
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
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