ARF475FL

ARF475FL 500 V, 900 W, 128 MHz RF Power MOSFET Product Overview The ARF475FL is a matched pair of RF power transistors in a common source configuration in a T3A package. It is designed for high-voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 128 MHz. Features • • • • • Specified 500 V, 128 MHz characteristics: – Output power = 900 W peak – Gain = 15 dB (Class AB) – Efficiency = 50% minimum High-performance push-pull RF package High-voltage breakdown and large SOA for superior ruggedness Low thermal resistance RoHS compliant © 2022 Microchip Technology Inc. and its subsidiaries Datasheet DS00004435A-page 1 ARF475FL Device Specifications 1. Device Specifications This section shows the specifications of the ARF475FL device. 1.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings of the ARF475FL device. TC = 25 °C unless otherwise specified. Table 1-1. Absolute Maximum Ratings 1.2 Symbol Parameter Ratings Unit VDSS Drain-source voltage 500 V VDGO Drain-gate voltage 500 ID Continuous drain current 10 A VGS Gate-source voltage ±30 V PD Total power dissipation (per side) 910 W TJ, TSTG Operating and storage junction temperature range –55 to 175 °C TL Lead temperature: 0.063" from case for 10 seconds 300 Electrical Performance The following table shows the static characteristics of the ARF475FL device. TC = 25 °C unless otherwise specified. Table 1-2. Static Characteristics Symbol Characteristic Test Conditions Min Typ V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 250 µA 500 VDS(ON) On-state drain voltage1 ID(ON) = 5 A, VGS = 10 V IDSS Zero-gate voltage drain current VDS = VDSS, VGS = 0 V 100 VDS = 50 V, VGS = 0 V, TC = 125 °C 500 ±100 Gate-source leakage current VGS = ±30 V, VDS = 0 V gfs Forward transconductance VDS = 15 V, ID = 5 A 4.2 gfs1/gfs2 Forward transconductance match VDS = 15 V, ID = 5 A ratio 0.9 VGS(th) Gate-source threshold voltage VDS = VGS, ID = 200 mA 2 DVGS(th) Gate threshold voltage match VDS = VGS, ID = 200 mA Unit V 2.9 IGSS Max 4 5.1 3.3 µA nA S 1.1 S 4 V 0.2 V Note:  1. Pulse test: Pulse width < 380 μs, Duty Cycle < 2%. The following table shows the thermal characteristics of the ARF475FL device. © 2022 Microchip Technology Inc. and its subsidiaries Datasheet DS00004435A-page 2 ARF475FL Device Specifications Table 1-3. Thermal Characteristics (per side) Symbol Characteristic RθJC RθJHS Min Typ Max Unit Junction-to-case thermal resistance 0.15 0.165 °C/W Junction-to-sink thermal resistance (Use high-efficiency thermal grease and planar heat sink surface.) 0.30 0.33 The following table shows the dynamic characteristics of the ARF475FL device. TC = 25 °C unless otherwise specified. Table 1-4. Dynamic Characteristics (per Section) Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input capacitance VGS = 0 V, VDS = 50 V, f = 1 MHz 740 830 pF Coss Output capacitance 125 130 Crss Reverse transfer capacitance 7 9 td(on) Turn-on delay time 5.1 10 tr Rise time 4.1 8 td(off) Turn-off delay time 12 18 tf Fall time 4.0 7 VGS = 15 V, VDD = 250 V, ID = ID[Cont.] at 25 °C, Rg = 1.6 Ω ns The following table shows the functional characteristics of the ARF475FL device. TC = 25 °C unless otherwise specified. Table 1-5. Functional Characteristics (Push-Pull Configuration) Parameter Characteristic Test Conditions Min Typ GPS Common source amplifier power gain 14 16 dB η Drain efficiency f = 128 MHz, VDD = 150 V, IDQ = 15 mA, Pout = 900 W, PW = 3 ms, 10% duty cycle 50 55 % Ψ Electrical ruggedness VSWR 5:1 © 2022 Microchip Technology Inc. and its subsidiaries Max Unit No degradation in output power Datasheet DS00004435A-page 3 ARF475FL Device Specifications 1.3 Typical Performance Curves This section shows the typical performance curves of the ARF475FL device per transistor section unless otherwise specified. Figure 1-1. Output Characteristics Figure 1-2. Capacitance vs. Drain-to-Source Voltage Figure 1-3. Transfer Characteristics Figure 1-4. Threshold Voltage vs. Temperature © 2022 Microchip Technology Inc. and its subsidiaries Datasheet DS00004435A-page 4 ARF475FL Device Specifications Figure 1-5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs. Pulse Duration Figure 1-6. Transient Thermal Impedance Model Figure 1-7. Maximum Safe Operating Area The following table shows the typical Class AB large signal input-output impedance for the ARF475FL device. © 2022 Microchip Technology Inc. and its subsidiaries Datasheet DS00004435A-page 5 ARF475FL Device Specifications Table 1-6. Typical Class AB Large Signal Input–Output Impedance Frequency (MHz) Zin (Ω) Gate-to-Gate Zout (Ω) Drain-to-Drain 30 5.2 – j 10 41 – j 20 60 1.37 – j 5.2 26 – j 25 90 0.53 – j 2.6 16 – j 23 120 0.25 – j 1.0 10 – j 20 150 0.25 + j 0.2 6.7 – j 17 Notes:  • Zin — Gate shunted with 25 Ω • IDQ = 15 mA each side • Zout — Conjugate of optimum load for 600 W peak output at Vdd = 150 V, 25% duty cycle and PW = 5 ms © 2022 Microchip Technology Inc. and its subsidiaries Datasheet DS00004435A-page 6 ARF475FL Test Circuits 2. Test Circuits The following figure shows the test circuits of the ARF475FL device. Figure 2-1. 128 MHz Test Circuit The following image shows the peak output power versus Vdd and duty cycle. Figure 2-2. Peak Output Power vs. Vdd and Duty Cycle Note:  The value of L1 must be adjusted as the supply voltage is changed to maintain resonance in the output circuit. At 128 MHz its value changes from approximately 40 nH at 100 V, to 30 nH at 150 V. With the 50 Ω drain-to-drain load, the duty cycle above 100 V must be reduced to ensure power dissipation is within the limits of the device. Maximum pulse length should be 100 ms or less. © 2022 Microchip Technology Inc. and its subsidiaries Datasheet DS00004435A-page 7 ARF475FL Package Specification 3. Package Specification This section shows the package specification of the ARF475FL device. 3.1 Package Outline Drawing The following figure illustrates the package outline of the ARF475FL device. Figure 3-1. T3A Package Outline Note:  Hazardous Material Warning! The white ceramic portion of the device between leads and mounting flange is beryllium oxide. Beryllium oxide dust is highly toxic when inhaled. Care must be take during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste. Note:  These devices are sensitive to electrostatic discharge. Proper handling procedures should be followed. Thermal Considerations and Package Mounting The rated power dissipation is only available when the package mounting surface is at 25 °C and the junction temperature is 175 °C. The thermal resistance between junctions and case mounting surface is 0.16 °C/W. When installed, an additional thermal impedance of 0.15 °C/W between the package base and the mounting surface is © 2022 Microchip Technology Inc. and its subsidiaries Datasheet DS00004435A-page 8 ARF475FL Package Specification typical. Ensure that the mounting surface is smooth and flat. Thermal joint compound must be used to reduce the effects of small surface irregularities. Use the minimum amount necessary to coat the surface. The heat sink should incorporate a copper heat spreader to obtain best results. The package design clamps the ceramic base to the heat sink. A clamped joint maintains the required mounting pressure while allowing for thermal expansion of both the base and the heat sink. Four 4-40 (M3) screws provide the required mounting force. T = 2.5 - 3.5 in-lb (0.28 - 0.40 N-m). © 2022 Microchip Technology Inc. and its subsidiaries Datasheet DS00004435A-page 9 ARF475FL Revision History 4. Revision History Table 4-1. Revision History Revision Date A 02/2022 Description • • Initial releases (Microsemi Revisions A through E) © 2022 Microchip Technology Inc. and its subsidiaries 02/2006 – 12/2010 Datasheet Document migrated from Microsemi template to Microchip template; Assigned Microchip literature number DS-00004435A,which replaces the previous Microsemi literature number 050-4929. Changed gfs minimum value from 3 to 4.2 and typical from 3.6 to 5.1 (changed unit from MHOS to S). Previous releases. DS00004435A-page 10 ARF475FL The Microchip Website Microchip provides online support via our website at www.microchip.com/. This website is used to make files and information easily available to customers. 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