Features
• 2.7 to 3.6V Supply
– Full Read and Write Operation
• Low Power Dissipation
•
•
•
•
•
•
•
– 8 mA Active Current
– 50 µA CMOS Standby Current
Read Access Time - 250 ns
Byte Write - 3 ms
Direct Microprocessor Control
– DATA Polling
– READ/BUSY Open Drain Output on TSOP
High Reliability CMOS Technology
– Endurance: 100,000 Cycles
– Data Retention: 10 Years
Low Voltage CMOS Compatible Inputs and Outputs
JEDEC Approved Byte Wide Pinout
Commercial and Industrial Temperature Ranges
16K (2K x 8)
Battery-Voltage™
Parallel
EEPROMs
Description
The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory
organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable
nonvolatile CMOS technology.
(continued)
AT28BV16
Pin Configurations
Pin Name
Function
A0 - A10
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
RDY/BUSY
Ready/Busy Output
NC
No Connect
DC
Don’t Connect
TSOP
Top View
OE
NC
A9
A8
NC
WE
VCC
RDY/BUSY
NC
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
A8
A9
WE
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
4
3
2
1
32
31
30
24
23
22
21
20
19
18
17
16
15
14
13
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
14
15
16
17
18
19
20
1
2
3
4
5
6
7
8
9
10
11
12
I/O1
I/O2
GND
DC
I/O3
I/O4
I/O5
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
PLCC
Top View
A7
NC
NC
DC
VCC
WE
NC
PDIP, SOIC
Top View
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A8
A9
NC
NC
OE
A10
CE
I/O7
I/O6
Rev. 0380B–10/98
1
The AT28BV16 is accessed like a static RAM for the read
or write cycles without the need of external components.
During a byte write, the address and data are latched internally, freeing the microprocessor address and data bus for
other operations. Following the initiation of a write cycle,
the device will go to a busy state and automatically clear
and write the latched data using an internal control timer.
The end of a write cycle can be determined by DATA polling of I/O 7 . Once the end of a write cycle has been
detected, a new access for a read or a write can begin.
The CMOS technology offers fast access times of 250 ns at
low power dissipation. When the chip is deselected the
standby current is less than 50 µA.
Atmel’s 28BV16 has additional features to ensure high
quality and manufacturability. The device utilizes error correction internally for extended endurance and for improved
data retention characteristics. An extra 32-bytes of
EEPROM are available for device identification or tracking.
Block Diagram
Absolute Maximum Ratings*
Temperature Under Bias ................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Voltage on OE and A9
with Respect to Ground ...................................-0.6V to +13.5V
2
AT28BV16
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
AT28BV16
Device Operation
READ: The AT28BV16 is accessed like a Static RAM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in a high
impedance state whenever CE or OE is high. This dual line
control gives designers increased flexibility in preventing
bus contention.
BYTE WRITE: Writing data into the AT28BV16 is similar
to writing into a Static RAM. A low pulse on the WE or CE
input with OE high and CE or WE low (respectively) initiates a byte write. The address location is latched on the
last falling edge of WE (or CE); the new data is latched on
the first rising edge. Internally, the device performs a selfclear before write. Once a byte write has been started, it
will automatically time itself to completion. Once a programming operation has been initiated and for the duration
of tWC, a read operation will effectively be a polling operation.
DATA POLLING: The AT28BV16 provides DATA POLLING to signal the completion of a write cycle. During a write
cycle, an attempted read of the data being written results in
the complement of that data for I/O7 (the other outputs are
indeterminate). When the write cycle is finished, true data
appears on all outputs.
READY/BUSY (TSOP only): READY/BUSY is an open
drain output; it is pulled low during the internal write cycle
and released at the completion of the write cycle.
WRITE PROTECTION: Inadvertent writes to the device
are protected against in the following ways: (a) V C C
sense—if VCC is below 2.0V (typical) the write function is
inhibited; (b) VCC power on delay—once VCC has reached
2.0V the device will automatically time out 5 ms (typical)
before allowing a byte write; and (c) Write Inhibit—holding
any one of OE low, CE high or WE high inhibits byte write
cycles.
DEVICE IDENTIFICATIO N: An extra 32-bytes of
EEPROM memory are available to the user for device identification. By raising A9 to 12 ± 0.5V and using address
locations 7E0H to 7FFH the additional bytes may be written
to or read from in the same manner as the regular memory
array.
3
DC and AC Operating Range
Com.
Operating
Temperature (Case)
Ind.
VCC Power Supply
AT28BV16-25
AT28BV16-30
0°C - 70°C
0°C - 70°C
-40°C - 85°C
-40°C - 85°C
2.7V to 3.6V
2.7V to 3.6V
Operating Modes
Mode
CE
OE
WE
I/O
Read
VIL
VIL
VIH
DOUT
VIL
VIH
VIL
DIN
High Z
Write
(2)
Standby/Write Inhibit
(1)
VIH
X
X
Write Inhibit
X
X
VIH
Write Inhibit
X
VIL
X
Output Disable
X
VIH
X
Notes:
High Z
1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
DC Characteristics
Symbol
Parameter
Condition
ILI
Input Load Current
ILO
Max
Units
VIN = 0V to VCC + 1.0V
5
µA
Output Leakage Current
VI/O = 0V to VCC
5
µA
ISB
VCC Standby Current CMOS
CE = VCC - 0.3V to VCC + 1.0V
50
µA
ICC
VCC Active Current AC
f = 5 MHz; IOUT = 0 mA; CE = VIL
8
mA
VIL
Input Low Voltage
0.6
V
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
4
AT28BV16
Min
2.0
V
IOL = 1 mA
0.3
V
IOL = 2 mA for RDY/BUSY
0.3
V
IOH = -100 µA
2.0
V
AT28BV16
AC Read Characteristics
AT28BV16-25
Symbol
Parameter
tACC
tCE
Min
Max
AT28BV16-30
Min
Max
Units
Address to Output Delay
250
300
ns
(1)
CE to Output Delay
250
300
ns
(2)
OE to Output Delay
100
100
ns
55
ns
tOE
tDF(3)(4)
CE or OE High to Output Float
0
tOH
Output Hold from OE, CE or Address, whichever
occurred first
0
55
0
0
ns
AC Read Waveforms(1)(2)(3)(4)
Notes:
1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.
2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change
without impact on tACC.
3. tDF is specified from OE or CE whichever occurs first (CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
Input Test Waveforms and
Measurement Level
Output Test Load
tR, tF < 20 ns
Pin Capacitance
f = 1 MHz, T = 25°C(1)
Symbol
Typ
Max
Units
Conditions
CIN
4
6
pF
VIN = 0V
COUT
8
12
pF
VOUT = 0V
Note:
1. This parameter is characterized and is not 100% tested.
5
AC Write Characteristics
Symbol
Parameter
Min
tAS, tOES
Address, OE Set-up Time
10
ns
tAH
Address Hold Time
100
ns
tWP
Write Pulse Width (WE or CE)
150
tDS
Data Set-up Time
100
ns
tDH, tOEH
Data, OE Hold Time
10
ns
tCS, tCH
CE to WE and WE to CE Set-up and Hold Time
0
ns
tWC
Write Cycle Time
3.0
ms
tDB
Time to Device Busy
50
ns
AC Write Waveforms
WE Controlled
CE Controlled
6
AT28BV16
Max
1000
Units
ns
AT28BV16
Data Polling Characteristics(1)
Symbol
Parameter
Min
tDH
Data Hold Time
10
ns
tOEH
OE Hold Time
10
ns
(2)
tOE
OE to Output Delay
tWR
Write Recovery Time
Notes:
Typ
Max
Units
ns
0
ns
1. These parameters are characterized and not 100% tested.
2. See AC Characteristics.
Data Polling Waveforms
7
Ordering Information(1)
ICC (mA)
tACC (ns)
Active
Standby
Ordering Code
Package
250
8
0.05
AT28BV16-25TC
AT28BV16-25JC
AT28BV16-25PC
AT28BV16-25SC
28T
32J
24P6
24S
Commercial
(0°C to 70°C)
8
0.05
AT28BV16-25TI
AT28BV16-25JI
AT28BV16-25PI
AT28BV16-25SI
28T
32J
24P6
24S
Industrial
(-40°C to 85°C)
8
0.05
AT28BV16-30TC
AT28BV16-30JC
AT28BV16-30PC
AT28BV16-30SC
28T
32J
24P6
24S
Commercial
(0°C to 70°C)
8
0.05
AT28BV16-30TI
AT28BV16-30JI
AT28BV16-30PI
AT28BV16-30SI
28T
32J
24P6
24S
Industrial
(-40°C to 85°C)
300
Note:
1. See Valid Part Number table below.
Valid Part Numbers
The following table lists standard Atmel products that can be ordered.
Device Numbers
Speed
Package and Temperature Combinations
AT28BV16
25
JC, JI, PC, PI, SC, SI, TC, TI
AT28BV16
30
JC, JI, PC, PI, SC, SI, TC, TI
Die Products
Reference Section: Parallel EEPROM Die Products
Package Type
28T
28-Lead, Plastic Thin Small Outline Package (TSOP)
32J
32-Lead, Plastic J-Leaded Chip Carrier (PLCC)
24P6
24-Lead, 0.600" Wide, Plastic Dual Inline Package (PDIP)
24S
24-Lead, 0.300" Wide, Plastic Gull Wing Small Outline (SOIC)
8
AT28BV16
Operation Range
AT28BV16
Packaging Information
28T, 28-Lead, Plastic Thin Small Outline Package
(TSOP)
Dimensions in Millimeters and (Inches)*
INDEX
MARK
AREA
32J, 32-Lead, Plastic J-Leaded Chip Carier (PLCC)
Dimensions in Inches and (Millimeters)
JEDEC STANDARD MS-016 AE
.045(1.14) X 45°
PIN NO. 1
IDENTIFY
13.7 (0.539)
13.1 (0.516)
11.9 (0.469)
11.7 (0.461)
.553(14.0)
.547(13.9)
.595(15.1)
.585(14.9)
.032(.813)
.026(.660)
0.27 (0.011)
0.18 (0.007)
0.55 (0.022)
BSC
.050(1.27) TYP
.300(7.62) REF
.430(10.9)
.390(9.90)
AT CONTACT
POINTS
7.15 (0.281)
REF
8.10 (0.319)
7.90 (0.311)
.025(.635) X 30° - 45°
.012(.305)
.008(.203)
1.25 (0.049)
1.05 (0.041)
.530(13.5)
.490(12.4)
.021(.533)
.013(.330)
.030(.762)
.015(3.81)
.095(2.41)
.060(1.52)
.140(3.56)
.120(3.05)
.022(.559) X 45° MAX (3X)
0.20 (0.008)
0.10 (0.004)
0
REF
5
.453(11.5)
.447(11.4)
.495(12.6)
.485(12.3)
0.20 (0.008)
0.15 (0.006)
0.70 (0.028)
0.30 (0.012)
*Controlling dimension: millimeters
24P6, 24-Lead, 0.600" Wide, Plastic Dual Inline
Package (PDIP)
Dimensions in Inches and (Millimeters)
24S, 24-Lead, 0.300" Wide, Plastic Gull Wing Small
Outline (SOIC)
Dimensions in Inches and (Millimeters)
JEDEC STANDARD MS-011 AA
1.27(32.3)
1.24(31.5)
.020(.508)
.013(.330)
PIN
1
.566(14.4)
.530(13.5)
.299(7.60) .420(10.7)
.291(7.39) .393(9.98)
PIN 1 ID
.090(2.29)
MAX
1.100(27.94) REF
.220(5.59)
MAX
.005(.127)
MIN
.050(1.27) BSC
.616(15.6)
.598(15.2)
SEATING
PLANE
.065(1.65)
.015(.381)
.022(.559)
.014(.356)
.161(4.09)
.125(3.18)
.110(2.79)
.090(2.29)
.012(.305)
.008(.203)
.065(1.65)
.041(1.04)
.105(2.67)
.092(2.34)
.012(.305)
.003(.076)
.630(16.0)
.590(15.0)
0 REF
15
.690(17.5)
.610(15.5)
.013(.330)
.009(.229)
0 REF
8
.050(1.27)
.015(.381)
9
10
AT28BV16
AT28BV16
11
Atmel Headquarters
Atmel Operations
Corporate Headquarters
Atmel Colorado Springs
2325 Orchard Parkway
San Jose, CA 95131
TEL (408) 441-0311
FAX (408) 487-2600
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TEL (719) 576-3300
FAX (719) 540-1759
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England
TEL (44) 1276-686677
FAX (44) 1276-686697
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FAX (33) 4 42 53 60 01
Asia
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Kowloon, Hong Kong
TEL (852) 27219778
FAX (852) 27221369
Japan
Atmel Japan K.K.
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1-24-8 Shinkawa
Chuo-ku, Tokyo 104-0033
Japan
TEL (81) 3-3523-3551
FAX (81) 3-3523-7581
Fax-on-Demand
North America:
1-(800) 292-8635
International:
1-(408) 441-0732
e-mail
literature@atmel.com
Web Site
http://www.atmel.com
BBS
1-(408) 436-4309
© Atmel Corporation 1998.
Atmel Cor poration makes no warranty for the use of its products, other than those expressly contained in the Company’s standard warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s website. The Company assumes no responsibility for
any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without
notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual proper ty of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are
not authorized for use as critical components in life suppor t devices or systems.
Marks bearing
®
and/or
™
are registered trademarks and trademarks of Atmel Corporation.
Terms and product names in this document may be trademarks of others.
Printed on recycled paper.
0380B–10/98/xM
