AT28C64E-12SU

Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs • Self-timed Byte Write Cycle • • • • • • • • – Internal Address and Data Latches – Internal Control Timer – Automatic Clear Before Write Direct Microprocessor Control – READY/BUSY Open Drain Output – DATA Polling Low Power – 30 mA Active Current – 100 µA CMOS Standby Current High Reliability – Endurance: 105 Cycles – Data Retention: 10 Years 5V ± 10% Supply CMOS and TTL Compatible Inputs and Outputs JEDEC Approved Byte-wide Pinout Industrial Temperature Ranges Green (Pb/Halide-Free) Packaging Option 64K (8K x 8) Parallel EEPROMs AT28C64E 1. Description The AT28C64E is a low-power, high-performance 8,192 words by 8-bit nonvolatile electrically erasable and programmable read-only memory with popular, easy-to-use features. The device is manufactured with Atmel’s reliable nonvolatile technology. The AT28C64E is accessed like a Static RAM for the read or write cycles without the need for external components. During a byte write, the address and data are latched internally, freeing the microprocessor address and data bus for other operations. Following the initiation of a write cycle, the device will go to a busy state and automatically clear and write the latched data using an internal control timer. The device includes two methods for detecting the end of a write cycle, level detection of RDY/BUSY (unless pin 1 is N.C.) and DATA Polling of I/O7. Once the end of a write cycle has been detected, a new access for a read or write can begin. The CMOS technology offers fast access times of 120 ns at low power dissipation. When the chip is deselected, the standby current is less than 100 µA. Atmel’s AT28C64E has additional features to ensure high quality and manufacturability. The device utilizes error correction internally for extended endurance and for improved data retention characteristics. An extra 32 bytes of EEPROM are available for device identification or tracking. 0001I–PEEPR–10/06 2.2 Function A0 - A12 Addresses CE Chip Enable OE Output Enable WE Write Enable I/O0 - I/O7 Data Inputs/Outputs RDY/BUSY Ready/Busy Output NC No Connect DC Don’t Connect 2.1 PDIP, SOIC Top View 28 27 26 25 24 23 22 21 20 19 18 17 16 15 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 LCC, PLCC Top View A7 A12 RDY/BUSY (or NC) DC VCC WE NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 2.3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 VCC WE NC A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 A6 A5 A4 A3 A2 A1 A0 NC I/O0 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 A8 A9 A11 NC OE A10 CE I/O7 I/O6 I/O1 I/O2 VSS DC I/O3 I/O4 I/O5 RDY/BUSY (or NC) A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND OE A11 A9 A8 NC WE VCC RDY/BUSY (or NC) A12 A7 A6 A5 A4 A3 4 3 2 1 32 31 30 Pin Name TSOP Top View 14 15 16 17 18 19 20 2. Pin Configurations Note: 2 PLCC package pins 1 and 17 are DON’T CONNECT. AT28C64E 0001I–PEEPR–10/06 AT28C64E 3. Block Diagram 4. Absolute Maximum Ratings* Temperature under Bias ................................ -55°C to +125°C Storage Temperature ..................................... -65°C to +150°C All Input Voltages (including NC Pins) with Respect to Ground ...................................-0.6V to +6.25V All Output Voltages with Respect to Ground .............................-0.6V to VCC + 0.6V *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability Voltage on OE and A9 with Respect to Ground ...................................-0.6V to +13.5V 3 0001I–PEEPR–10/06 5. Device Operation 5.1 Read The AT28C64E is accessed like a Static RAM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in a high impedance state whenever CE or OE is high. This dual line control gives designers increased flexibility in preventing bus contention. 5.2 Byte Write Writing data into the AT28C64E is similar to writing into a Static RAM. A low pulse on the WE or CE input with OE high and CE or WE low (respectively) initiates a byte write. The address location is latched on the falling edge of WE (or CE); the new data is latched on the rising edge. Internally, the device performs a self-clear before write. Once a byte write has been started, it will automatically time itself to completion. Once a programming operation has been initiated and for the duration of tWC, a read operation will effectively be a polling operation. 5.3 Fast Byte Write The AT28C64E offers a byte write time of 200 µs maximum. This feature allows the entire device to be rewritten in 1.6 seconds. 5.4 READY/BUSY Pin 1 is an open drain RDY/BUSY output that can be used to detect the end of a write cycle. RDY/BUSY is actively pulled low during the write cycle and is released at the completion of the write. The open-drain connection allows for OR-tying of several devices to the same RDY/BUSY line. 5.5 Data Polling The AT28C64E provides DATA Polling to signal the completion of a write cycle. During a write cycle, an attempted read of the data being written results in the complement of that data for I/O7 (the other outputs are indeterminate). When the write cycle is finished, true data appears on all outputs. 5.6 Write Protection Inadvertent writes to the device are protected against in the following ways: (a) VCC sense – if VCC is below 3.8V (typical), the write function is inhibited; (b) VCC power on delay – once VCC has reached 3.8V, the device will automatically time out 5 ms (typical) before allowing a byte write; and (c) write inhibit – holding any one of OE low, CE high or WE high inhibits byte write cycles. 5.7 Chip Clear The contents of the entire memory of the AT28C64E may be set to the high state by the CHIP CLEAR operation. By setting CE low and OE to 12 volts, the chip is cleared when a 10 msec low pulse is applied to WE. 5.8 Device Identification An extra 32 bytes of EEPROM memory are available to the user for device identification. By raising A9 to 12 ± 0.5V and using address locations 1FE0H to 1FFFH the additional bytes may be written to or read from in the same manner as the regular memory array. 4 AT28C64E 0001I–PEEPR–10/06 AT28C64E 6. DC and AC Operating Range AT28C64E-12 Operating Temperature (Case) -40°C - 85°C 5V ± 10% VCC Power Supply 7. Operating Modes Mode CE OE WE I/O Read VIL VIL VIH DOUT VIL VIH VIL DIN VIH X(1) X High Z Write Inhibit X X VIH Write Inhibit X VIL X Output Disable X VIH X High Z Chip Erase VIL VH(3) VIL High Z Write (2) Standby/Write Inhibit Notes: 1. X can be VIL or VIH. 2. Refer to AC programming waveforms. 3. VH = 12.0V ± 0.5V. 8. DC Characteristics Symbol Parameter Condition ILI Input Load Current ILO Min Max Units VIN = 0V to VCC + 1V 10 µA Output Leakage Current VI/O = 0V to VCC 10 µA ISB1 VCC Standby Current CMOS CE = VCC - 0.3V to VCC + 1.0V 100 µA ISB2 VCC Standby Current TTL CE = 2.0V to VCC + 1.0V 3 mA ICC VCC Active Current AC f = 5 MHz; IOUT = 0 mA CE = VIL 45 mA VIL Input Low Voltage 0.8 V VIH Input High Voltage VOL Output Low Voltage IOL = 2.1 mA = 4.0 mA for RDY/BUSY VOH Output High Voltage IOH = -400 µA 2.0 V 0.45 2.4 V V 5 0001I–PEEPR–10/06 9. AC Read Characteristics AT28C64E-12 Symbol Parameter tACC Min Max Units Address to Output Delay 120 ns (1) CE to Output Delay 120 ns tOE(2) OE to Output Delay 10 60 ns tDF(3)(4) CE or OE High to Output Float 0 45 ns tOH Output Hold from OE, CE or Address, whichever occurred first 0 tCE ns 10. AC Read Waveforms(1)(2)(3)(4) Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC. 2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change without impact on tACC. 3. tDF is specified from OE or CE whichever occurs first (CL = 5 pF). 4. This parameter is characterized and is not 100% tested. 6 AT28C64E 0001I–PEEPR–10/06 AT28C64E 11. Input Test Waveforms and Measurement Level tR, tF < 20 ns 12. Output Test Load 13. Pin Capacitance f = 1 MHz, T = 25°C(1) Symbol Typ Max Units Conditions CIN 4 6 pF VIN = 0V COUT 8 12 pF VOUT = 0V Note: 1. This parameter is characterized and is not 100% tested. 7 0001I–PEEPR–10/06 14. AC Write Characteristics Symbol Parameter Min Max tAS, tOES Address, OE Setup Time 10 ns tAH Address Hold Time 50 ns tWP Write Pulse Width (WE or CE) 100 tDS Data Setup Time 50 ns tDH, tOEH Data, OE Hold Time 10 ns tCS, tCH CE to WE and WE to CE Setup and Hold Time 0 ns tDB Time to Device Busy 50 ns tWC Write Cycle Time 200 µs 1000 Units ns 15. AC Write Waveforms 15.1 WE Controlled 15.2 CE Controlled 8 AT28C64E 0001I–PEEPR–10/06 AT28C64E 16. Data Polling Characteristics(1) Symbol Parameter tDH Data Hold Time tOEH OE Hold Time tOE tWR Notes: Min Max Units 10 ns 10 ns (2) OE to Output Delay Write Recovery Time Typ ns 0 ns 1. These parameters are characterized and not 100% tested. 2. See “AC Read Characteristics”. 17. Data Polling Waveforms 18. Chip Erase Waveforms tS = tH = 1 µsec (min.) tW = 10 msec (min.) VH = 12.0 ± 0.5V 9 0001I–PEEPR–10/06 10 AT28C64E 0001I–PEEPR–10/06 AT28C64E 19. Ordering Information 19.1 Standard Package ICC (mA) tACC (ns) Active Standby Ordering Code Package 120 45 0.1 AT28C64E-12JI AT28C64E-12PI AT28C64E-12SI AT28C64E-12TI 32J 28P6 28S 28T 19.2 Industrial (-40° C to 85° C) Green Package (Pb/Halide-free) ICC (mA) tACC (ns) Active Standby 120 45 0.1 19.3 Operation Range Ordering Code Package AT28C64E-12JU AT28C64E-12PU AT28C64E-12SU AT28C64E-12TU 32J 28P6 28S 28T Operation Range Industrial (-40° C to 85° C) Package Type 32J 32-lead, Plastic J-leaded Chip Carrier (PLCC) 28P6 28-lead, 0.600" Wide, Plastic Dull Inline Package (PDIP) 28S 28-lead, 0.300" Wide, Plastic Gull Wing, Small Outline (SOIC) 28T 28-lead, Plastic Thin Small Outline Package (TSOP) 20. Valid Part Numbers The following table lists standard Atmel® products that can be ordered. Device Numbers AT28C64E Speed 12 Package and Temperature Combinations JI, JU, PI, PU, SI, SU, TI, TU 21. Die Products Reference Section: Parallel EEPROM Die Products 11 0001I–PEEPR–10/06 22. Packaging Information 22.1 32J – PLCC 1.14(0.045) X 45˚ PIN NO. 1 IDENTIFIER 1.14(0.045) X 45˚ 0.318(0.0125) 0.191(0.0075) E1 E2 B1 E B e A2 D1 A1 D A 0.51(0.020)MAX 45˚ MAX (3X) COMMON DIMENSIONS (Unit of Measure = mm) D2 Notes: 1. This package conforms to JEDEC reference MS-016, Variation AE. 2. Dimensions D1 and E1 do not include mold protrusion. Allowable protrusion is .010"(0.254 mm) per side. Dimension D1 and E1 include mold mismatch and are measured at the extreme material condition at the upper or lower parting line. 3. Lead coplanarity is 0.004" (0.102 mm) maximum. SYMBOL MIN NOM MAX A 3.175 – 3.556 A1 1.524 – 2.413 A2 0.381 – – D 12.319 – 12.573 D1 11.354 – 11.506 D2 9.906 – 10.922 E 14.859 – 15.113 E1 13.894 – 14.046 E2 12.471 – 13.487 B 0.660 – 0.813 B1 0.330 – 0.533 e NOTE Note 2 Note 2 1.270 TYP 10/04/01 R 12 2325 Orchard Parkway San Jose, CA 95131 TITLE 32J, 32-lead, Plastic J-leaded Chip Carrier (PLCC) DRAWING NO. REV. 32J B AT28C64E 0001I–PEEPR–10/06 AT28C64E 22.2 28P6 – PDIP D PIN 1 E1 A SEATING PLANE A1 L B B1 e E 0º ~ 15º C COMMON DIMENSIONS (Unit of Measure = mm) REF MIN NOM MAX A – – 4.826 A1 0.381 – – D 36.703 – 37.338 E 15.240 – 15.875 E1 13.462 – 13.970 B 0.356 – 0.559 B1 1.041 – 1.651 L 3.048 – 3.556 C 0.203 – 0.381 eB 15.494 – 17.526 SYMBOL eB Notes: 1. This package conforms to JEDEC reference MS-011, Variation AB. 2. Dimensions D and E1 do not include mold Flash or Protrusion. Mold Flash or Protrusion shall not exceed 0.25 mm (0.010"). e NOTE Note 2 Note 2 2.540 TYP 09/28/01 R 2325 Orchard Parkway San Jose, CA 95131 TITLE 28P6, 28-lead (0.600"/15.24 mm Wide) Plastic Dual Inline Package (PDIP) DRAWING NO. 28P6 REV. B 13 0001I–PEEPR–10/06 22.3 28S – SOIC Dimensions in Millimeters and (Inches). Controlling dimension: Millimeters. 0.51(0.020) 0.33(0.013) 7.60(0.2992) 10.65(0.419) 7.40(0.2914) 10.00(0.394) PIN 1 1.27(0.50) BSC TOP VIEW 18.10(0.7125) 17.70(0.6969) 2.65(0.1043) 2.35(0.0926) 0.30(0.0118) 0.10(0.0040) SIDE VIEWS 0.32(0.0125) 0.23(0.0091) 0º ~ 8º 1.27(0.050) 0.40(0.016) 8/4/03 R 14 2325 Orchard Parkway San Jose, CA 95131 TITLE 28S, 28-lead, 0.300" Body, Plastic Gull Wing Small Outline (SOIC) JEDEC Standard MS-013 DRAWING NO. REV. 28S B AT28C64E 0001I–PEEPR–10/06 AT28C64E 22.4 28T – TSOP PIN 1 0º ~ 5º c Pin 1 Identifier Area D1 D L b e L1 A2 E A GAGE PLANE SEATING PLANE COMMON DIMENSIONS (Unit of Measure = mm) A1 MIN NOM MAX A – – 1.20 A1 0.05 – 0.15 A2 0.90 1.00 1.05 D 13.20 13.40 13.60 D1 11.70 11.80 11.90 Note 2 E 7.90 8.00 8.10 Note 2 L 0.50 0.60 0.70 SYMBOL Notes: 1. This package conforms to JEDEC reference MO-183. 2. Dimensions D1 and E do not include mold protrusion. Allowable protrusion on E is 0.15 mm per side and on D1 is 0.25 mm per side. 3. Lead coplanarity is 0.10 mm maximum. L1 NOTE 0.25 BASIC b 0.17 0.22 0.27 c 0.10 – 0.21 e 0.55 BASIC 12/06/02 R 2325 Orchard Parkway San Jose, CA 95131 TITLE 28T, 28-lead (8 x 13.4 mm) Plastic Thin Small Outline Package, Type I (TSOP) DRAWING NO. REV. 28T C 15 0001I–PEEPR–10/06 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards 1150 East Cheyenne Mtn. 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