AT42QT1010-TSHR

AT42QT1010 AT42QT1010 Data Sheet Introduction The AT42QT1010 is a digital burst mode charge-transfer sensor that is capable of detecting near proximity or touch, making it ideal for implementing touch controls. The QT1010 is designed specifically for human interfaces like control panels, appliances, toys, lighting controls, or anywhere a mechanical switch or button may be found. It includes all hardware and signal processing functions necessary to provide stable sensing under a wide variety of changing conditions. Only a single low-cost capacitor is required for operation. Features • • • • • • • • • • • • • Number of Keys: – One – configurable as either a single key or a proximity sensor Technology: – Patented spread-spectrum charge-transfer (direct mode) Key outline sizes: – 6 mm × 6 mm or larger (panel thickness dependent); widely different sizes and shapes possible Electrode design: – Solid or ring electrode shapes PCB Layers required: – One Electrode materials: – Etched copper, silver, carbon, Indium Tin Oxide (ITO) Electrode substrates: – PCB, FPCB, plastic films, glass Panel materials: – Plastic, glass, composites, painted surfaces (low particle density metallic paints possible) Panel thickness: – Up to 12 mm glass, 6 mm plastic (electrode size and Cs dependent) Key sensitivity: – Settable via capacitor (Cs) Interface: – Digital output, active high Moisture tolerance: – Increased moisture tolerance based on hardware design and firmware tuning Operating Voltage: © 2017 Microchip Technology Inc. Datasheet DS40001946A-page 1 AT42QT1010 • • • • – 1.8 V – 5.5 V; 17 µA at 1.8 V typical Package: – 6-pin SOT23-6 RoHS compliant – 8-pin UDFN/USON RoHS compliant Signal processing: – Self-calibration, auto drift compensation, noise filtering Applications: – Control panels, consumer appliances, proximity sensor applications, toys, lighting controls, mechanical switch or button, Patents: ® – QTouch technology (patented charge-transfer method) – HeartBeat (monitors health of device) © 2017 Microchip Technology Inc. Datasheet DS40001946A-page 2 Table of Contents Introduction......................................................................................................................1 Features.......................................................................................................................... 1 1. Pinout and Schematic................................................................................................5 1.1. 1.2. 1.3. Pinout Configurations................................................................................................................... 5 Pin Descriptions........................................................................................................................... 5 Schematics...................................................................................................................................6 2. Overview of the AT42QT1010................................................................................... 8 2.1. 2.2. 2.3. 2.4. Introduction...................................................................................................................................8 Basic Operation............................................................................................................................8 Electrode Drive.............................................................................................................................8 Sensitivity..................................................................................................................................... 8 3. Operation Specifics................................................................................................. 10 3.1. 3.2. 3.3. 3.4. 3.5. 3.6. 3.7. 3.8. 3.9. Run Modes................................................................................................................................. 10 Threshold....................................................................................................................................11 Max On-duration.........................................................................................................................12 Detect Integrator.........................................................................................................................12 Forced Sensor Recalibration......................................................................................................12 Drift Compensation.....................................................................................................................12 Response Time.......................................................................................................................... 13 Spread Spectrum....................................................................................................................... 13 Output Features......................................................................................................................... 13 4. Circuit Guidelines.................................................................................................... 15 4.1. 4.2. 4.3. 4.4. 4.5. More Information........................................................................................................................ 15 Sample Capacitor.......................................................................................................................15 UDFN/USON Package Restrictions........................................................................................... 15 Power Supply and PCB Layout.................................................................................................. 15 Power On................................................................................................................................... 16 5. Specifications.......................................................................................................... 17 5.1. Absolute Maximum Specifications..............................................................................................17 5.2. 5.3. 5.4. 5.5. 5.6. 5.7. 5.8. 5.9. Recommended Operating Conditions........................................................................................ 17 AC Specifications....................................................................................................................... 17 Signal Processing.......................................................................................................................19 DC Specifications....................................................................................................................... 20 Mechanical Dimensions............................................................................................................. 21 Part Marking............................................................................................................................... 23 Part Number............................................................................................................................... 23 Moisture Sensitivity Level (MSL)................................................................................................ 24 6. Associated Documents............................................................................................25 © 2017 Microchip Technology Inc. Datasheet DS40001946A-page 3 AT42QT1010 7. Revision History.......................................................................................................26 The Microchip Web Site................................................................................................ 27 Customer Change Notification Service..........................................................................27 Customer Support......................................................................................................... 27 Microchip Devices Code Protection Feature................................................................. 27 Legal Notice...................................................................................................................28 Trademarks................................................................................................................... 28 Quality Management System Certified by DNV.............................................................29 Worldwide Sales and Service........................................................................................30 © 2017 Microchip Technology Inc. Datasheet DS40001946A-page 4 AT42QT1010 1. Pinout and Schematic 1.1 Pinout Configurations 1.1.1 6-pin SOT23-6 Pin 1 ID 1.1.2 OUT 1 6 SYNC/ MODE VSS 2 5 VDD SNSK 3 4 SNS 8-pin UDFN/USON Pin 1 ID 1.2 Pin Descriptions 1.2.1 6-pin SOT23-6 Table 1-1. Pin Listing SNSK 1 8 SNS N/C 2 7 VDD N/C 3 6 SYNC/MODE VSS 4 5 OUT Name Pin Type Comments If Unused, Connect To... OUT 1 O Output state — VSS 2 P Supply ground — SNSK 3 I/O Sense pin Cs + Key SNS 4 I/O Sense pin Cs VDD 5 P Power — I SYNC and Mode Input Pin is either SYNC/Slow/Fast Mode, depending on logic level applied (see Section 3.1) SYNC 6 © 2017 Microchip Technology Inc. Datasheet DS40001946A-page 5 AT42QT1010 Legend: I = Input only, O = Output only, push-pull, I/O = Input/output, OD = Open drain output, P = Ground or power 1.2.2 8-pin UDFN/USON Table 1-2. Pin Listing Name Pin Type Comments If Unused, Connect To... SNSK 1 I/O Sense pin Cs + Key N/C 2 — No connection — N/C 3 — No connection — VSS 4 P Supply ground — OUT 5 O Output state — SYNC/ 6 MODE I SYNC and Mode Input Pin is either SYNC/Slow/Fast Mode, depending on logic level applied (see Section 3.1) VDD 7 P Power — SNS 8 I/O Sense pin Cs Legend: I = Input only, O = Output only, push-pull, I/O = Input/output, OD = Open drain output, P = Ground or power 1.3 Schematics 1.3.1 6-pin SOT23-6 Figure 1-1. Basic Circuit Configuration VDD SENSE ELECTRODE 5 VDD 1 OUT SNSK Rs 3 Cs SNS 4 SYNC/MODE 6 VSS Cx 2 Note: A bypass capacitor should be tightly wired between Vdd and Vss and kept close to pin 5. © 2017 Microchip Technology Inc. Datasheet DS40001946A-page 6 AT42QT1010 1.3.2 8-pin UDFN/USON Figure 1-2. Basic Circuit Configuration Vdd SENSE ELECTRODE 7 VDD 5 2 3 SNSK OUT NC SNS NC SYNC/MODE Rs 1 Cs 8 6 Cx VSS 4 Note: A bypass capacitor should be tightly wired between Vdd and Vss and kept close to pin 5. © 2017 Microchip Technology Inc. Datasheet DS40001946A-page 7 AT42QT1010 2. Overview of the AT42QT1010 2.1 Introduction The AT42QT1010 is a digital burst mode charge-transfer sensor that is capable of detecting nearproximity or touch, making it ideal for implementing touch controls. With the proper electrode and circuit design, the self-contained digital IC will project a touch or proximity field to several centimeters through any dielectric like glass, plastic, stone, ceramic, and even most kinds of wood. It can also turn small metal-bearing objects into intrinsic sensors, making them responsive to proximity or touch. This capability, coupled with its ability to self-calibrate, can lead to entirely new product concepts. The QT1010 is designed specifically for human interfaces like control panels, appliances, toys, lighting controls, or anywhere a mechanical switch or button may be found. It includes all hardware and signal processing functions necessary to provide stable sensing under a wide variety of changing conditions. Only a single low-cost capacitor is required for operation. 2.2 Basic Operation Figure 1-1 and Figure 1-2 show basic circuits. The QT1010 employs bursts of charge-transfer cycles to acquire its signal. Burst mode permits power consumption in the microamp range, dramatically reduces RF emissions, lowers susceptibility to EMI, and yet permits excellent response time. Internally the signals are digitally processed to reject impulse noise, using a “consensus” filter which requires four consecutive confirmations of a detection before the output is activated. The QT switches and charge measurement hardware functions are all internal to the QT1010. 2.3 Electrode Drive For optimum noise immunity, the electrode should only be connected to SNSK. In all cases, the rule Cs >> Cx must be observed for proper operation; a typical load capacitance (Cx) ranges from 5–20 pF while Cs is usually about 2–50 nF. Increasing amounts of Cx destroy gain; therefore, it is important to limit the amount of stray capacitance on both SNS terminals. This can be done, for example, by minimizing trace lengths and widths, and keeping these traces away from power or ground traces or copper pours. The traces and any components associated with SNS and SNSK will become touch sensitive and should be treated with caution to limit the touch area to the desired location. A series resistor, Rs, should be placed in line with SNSK to the electrode to suppress ESD and EMC effects. 2.4 Sensitivity 2.4.1 Introduction The sensitivity on the QT1010 is a function of things like the value of Cs, electrode size and capacitance, electrode shape and orientation, the composition and aspect of the object to be sensed, the thickness © 2017 Microchip Technology Inc. Datasheet DS40001946A-page 8 AT42QT1010 and composition of any overlaying panel material, and the degree of ground coupling of both sensor and object. 2.4.2 Increasing Sensitivity In some cases it may be desirable to increase sensitivity; for example, when using the sensor with very thick panels having a low dielectric constant, or when the device is used as a proximity sensor. Sensitivity can often be increased by using a larger electrode or reducing panel thickness. Increasing electrode size can have diminishing returns, since high values of Cx will reduce sensor gain. The value of Cs also has a dramatic effect on sensitivity, and this can be increased in value with the trade-off of slower response time and more power. Increasing the electrode's surface area will not substantially increase touch sensitivity if its diameter is already much larger in surface area than the object being detected. Panel material can also be changed to one having a higher dielectric constant, which will better help to propagate the field. In the case of proximity detection, usually the object being detected is on an approaching hand, so a larger surface area can be effective. Ground planes around and under the electrode and its SNSK trace will cause high Cx loading and destroy gain. The possible signal-to-noise ratio benefits of ground area are more than negated by the decreased gain from the circuit so ground areas around electrodes are discouraged. Metal areas near the electrode will reduce the field strength and increase Cx loading and should be avoided, if possible. Keep ground away from the electrodes and traces. 2.4.3 Decreasing Sensitivity In some cases the QT1010 may be too sensitive. In this case gain can be easily lowered further by decreasing Cs. 2.4.4 Proximity Sensing By increasing the sensitivity, the QT1010 can be used as a very effective proximity sensor, allowing the presence of a nearby object (typically a hand) to be detected. In this scenario, as the object being sensed is typically a hand, very large electrode sizes can be used, which is extremely effective in increasing the sensitivity of the detector. In this case, the value of Cs will also need to be increased to ensure improved sensitivity, as mentioned in Section 2.4.2. Note that, although this affects the responsiveness of the sensor, it is less of an issue in proximity sensing applications; in such applications it is necessary to detect simply the presence of a large object, rather than a small, precise touch. © 2017 Microchip Technology Inc. Datasheet DS40001946A-page 9 AT42QT1010 3. Operation Specifics 3.1 Run Modes 3.1.1 Introduction The QT1010 has three running modes which depend on the state of the SYNC pin (high or low). 3.1.2 Fast Mode The QT1010 runs in Fast mode if the SYNC pin is permanently high. In this mode the QT1010 runs at maximum speed at the expense of increased current consumption. Fast mode is useful when speed of response is the prime design requirement. The delay between bursts in Fast mode is approximately 1 ms, as shown in the following figure. Figure 3-1. Fast Mode Bursts (SYNC Held High) SNSK ~1 ms SYNC 3.1.3 Low Power Mode The QT1010 runs in Low Power (LP) mode if the SYNC pin is held low. In this mode it sleeps for approximately 80 ms at the end of each burst, saving power but slowing response. On detecting a possible key touch, it temporarily switches to Fast mode until either the key touch is confirmed or found to be spurious (via the detect integration process). It then returns to LP mode after the key touch is resolved, as shown in the following figure. SNSK sleep Key 80 m s touch Figure 3-2. Low Power Mode (SYNC Held Low) sleep fast detect integrator sleep SYNC OUT 3.1.4 SYNC Mode It is possible to synchronize the device to an external clock source by placing an appropriate waveform on the SYNC pin. SYNC mode can synchronize multiple QT1010 devices to each other to prevent cross- © 2017 Microchip Technology Inc. Datasheet DS40001946A-page 10 AT42QT1010 interference, or it can be used to enhance noise immunity from low frequency sources such as 50Hz or 60Hz mains signals. The SYNC pin is sampled at the end of each burst. If the device is in Fast mode and the SYNC pin is sampled high, then the device continues to operate in Fast mode (Figure 3-1). If SYNC is sampled low, then the device goes to sleep. From then on, it will operate in SYNC mode (Figure 3-2). Therefore, to guarantee entry into SYNC mode, the low period of the SYNC signal should be longer than the burst length (Figure 3-3). Figure 3-3. SYNC Mode (Triggered by SYNC Edges) SNSK sleep sleep SYNC SNSK sleep Revert to Fast Mode slow mode sleep period sleep sleep sleep Revert to Slow Mode slow mode sleep period SYNC However, once SYNC mode has been entered, if the SYNC signal consists of a series of short pulses (>10 μs), then a burst will only occur on the falling edge of each pulse (Figure 3-4) instead of on each change of SYNC signal, as normal (Figure 3-3). In SYNC mode, the device will sleep after each measurement burst (just as in LP mode) but will be awakened by a change in the SYNC signal in either direction, resulting in a new measurement burst. If SYNC remains unchanged for a period longer than the LP mode sleep period (about 80 ms), the device will resume operation in either Fast or LP mode depending on the level of the SYNC pin (Figure 3-3). There is no Detect Integrator (DI) in SYNC mode (each touch is a detection), but the Max On-duration will depend on the time between SYNC pulses, refer toMax On-duration and Section 3.4. Recalibration timeout is a fixed number of measurements so it will vary with the SYNC period. Figure 3-4. SYNC Mode (Short Pulses) SNSK >10 μ s >10 μ s >10 μ s SYNC 3.2 Threshold The internal signal threshold level is fixed at 10 counts of change with respect to the internal reference level, which in turn adjusts itself slowly in accordance with the drift compensation mechanism. The QT1010 employs a hysteresis dropout of two counts of the delta between the reference and threshold levels. © 2017 Microchip Technology Inc. Datasheet DS40001946A-page 11 AT42QT1010 3.3 Max On-duration If an object or material obstructs the sense pad, the signal may rise enough to create a detection, preventing further operation. To prevent this, the sensor includes a timer which monitors detections. If a detection exceeds the timer setting, the sensor performs a full recalibration. This is known as the Max On-duration feature and is set to ~60s (at 3V in LP mode). This will vary slightly with Cs and if SYNC mode is used. As the internal timebase for Max On-duration is determined by the burst rate, the use of SYNC can cause dramatic changes in this parameter depending on the SYNC pulse spacing. For example, at 60Hz SYNC mode the Max On-duration will be ~6s at 3V. 3.4 Detect Integrator It is desirable to suppress detections generated by electrical noise or from quick brushes with an object. To accomplish this, the QT1010 incorporates a Detect Integration (DI) counter that increments with each detection until a limit is reached, after which the output is activated. If no detection is sensed prior to the final count, the counter is reset immediately to zero. In the QT1010, the required count is four. In LP mode the device will switch to Fast mode temporarily in order to resolve the detection more quickly; after a touch is either confirmed or denied, the device will revert back to normal LP mode operation automatically. The DI can also be viewed as a “consensus filter” that requires four successive detections to create an output. 3.5 Forced Sensor Recalibration The QT1010 has no recalibration pin; a forced recalibration is accomplished when the device is powered up or after the recalibration timeout. However, supply drain is low so it is a simple matter to treat the entire IC as a controllable load; driving the QT1010's Vdd pin directly from another logic gate or a microcontroller port will serve as both power and “forced recalibration”. The source resistance of most CMOS gates and microcontrollers is low enough to provide direct power without problem. 3.6 Drift Compensation Signal drift can occur because of changes in Cx and Cs over time. It is crucial that drift be compensated for; otherwise, false detections, non-detections, and sensitivity shifts will follow. Drift compensation (Figure 3-5) is performed by making the reference level track the raw signal at a slow rate, but only while there is no detection in effect. The rate of adjustment must be performed slowly, otherwise legitimate detections could be ignored. The QT1010 drift compensates using a slew-rate limited change to the reference level; the threshold and hysteresis values are slaved to this reference. Once an object is sensed, the drift compensation mechanism ceases since the signal is legitimately high, and therefore should not cause the reference level to change. © 2017 Microchip Technology Inc. Datasheet DS40001946A-page 12 AT42QT1010 Figure 3-5. Drift Compensation Signal Hysteresis Threshold Reference Output The QT1010 drift compensation is asymmetric; the reference level drift-compensates in one direction faster than it does in the other. Specifically, it compensates faster for decreasing signals than for increasing signals. Increasing signals should not be compensated for quickly, since an approaching finger could be compensated for partially or entirely before even approaching the sense electrode. However, an obstruction over the sense pad, for which the sensor has already made full allowance, could suddenly be removed leaving the sensor with an artificially elevated reference level and thus become insensitive to touch. In this latter case, the sensor will compensate for the object's removal very quickly, usually in only a few seconds. With large values of Cs and small values of Cx, drift compensation will appear to operate more slowly than with the converse. Note that the positive and negative drift compensation rates are different. 3.7 Response Time The QT1010's response time is highly dependent on run mode and burst length, which in turn is dependent on Cs and Cx. With increasing Cs, response time slows, while increasing levels of Cx reduce response time. The response time will also be a lot slower in LP or SYNC mode due to a longer time between burst measurements. 3.8 Spread Spectrum The QT1010 modulates its internal oscillator by ±7.5% during the measurement burst. This spreads the generated noise over a wider band, reducing emission levels. This also reduces susceptibility since there is no longer a single fundamental burst frequency. 3.9 Output Features 3.9.1 Output The output of the QT1010 is active-high upon detection. The output will remain active-high for the duration of the detection, or until the Max On-duration expires, whichever occurs first. If a Max On-duration timeout occurs first, the sensor performs a full recalibration and the output becomes inactive (low) until the next detection. 3.9.2 HeartBeat Output The QT1010 output has a HeartBeat “health” indicator superimposed on it in all modes. This operates by taking the output pin into a three-state mode for 15 μs, once before every QT burst. This output state can be used to determine that the sensor is operating properly, using one of several simple methods, or it can be ignored. © 2017 Microchip Technology Inc. Datasheet DS40001946A-page 13 AT42QT1010 The HeartBeat indicator can be sampled by using a pull-up resistor on the OUT pin (Figure 3-6), and feeding the resulting positive-going pulse into a counter, flip flop, one-shot, or other circuit. The pulses will only be visible when the chip is not detecting a touch. Figure 3-6. Obtaining HeartBeat Pulses with a Pull-up Resistor (SOT23-6) VDD 5 HeartBeat" Pulse VDD Ro 1 OUT SNSK SNS 3 4 SYNC/MODE 6 VSS 2 If the sensor is wired to a microcontroller as shown in Figure 3-7, the microcontroller can reconfigure the load resistor to either Vss or Vdd depending on the output state of the QT1010, so that the pulses are evident in either state. Figure 3-7. Using a Microcontroller to Obtain HeartBeat Pulses in Either Output State (SOT23-6) Port_M.x Ro 1 OUT SNSK SNS Microcontroller 3 4 Port_M.y SYNC/MODE 6 Electromechanical devices like relays will usually ignore the short HeartBeat pulse. The pulse also has too low a duty cycle to visibly affect LEDs. It can be filtered completely if desired, by adding an RC filter to the output, or if interfacing directly and only to a high-impedance CMOS input, by doing nothing or at most adding a small noncritical capacitor from OUT to Vss. 3.9.3 Output Drive The OUT pin is active high and can sink or source up to 2 mA. When a large value of Cs (>20 nF) is used, the OUT current should be limited to