CDLL2810E3

1N5711UR-1, 1N5712UR-1, 1N6857UR-1, and 1N6858UR-1 plus CDLL equivalents Qualified Levels: JAN, JANTX, and JANTXV Schottky Barrier Diode MELF Surface Mount Available on commercial versions Qualified per MIL-PRF-19500/444 DESCRIPTION This Schottky barrier diode is metallurgically bonded and offers military grade qualifications for high-reliability applications. This small diode is hermetically sealed and bonded into a DO-213AA glass package. Also included in this datasheet are Microsemi’s CDLL numbered variants of this series (military qualification grades not are not available for the CDLL prefix part numbers). DO-213AA (MELF) Package Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • Surface mount equivalent of JEDEC registered 1N5711, 1N5712, 1N6857, and 1N6858 numbers. • Hermetically sealed glass construction. • Metallurgically bonded. • Double plug construction. • JAN, JANTX, JANTXV and commercial qualifications also available per MIL-PRF-19500/444 on “1N” numbers only. UB package (3-pin surface mount) 1N5711UB, 1N5712UB (B, CC, CA) (See Part Nomenclature for all available options). • Also available in: RoHS compliant versions available (commercial grade only). DO-35 package (axial-leaded) 1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1 APPLICATIONS / BENEFITS • • • Low reverse leakage characteristics. Small size for high density mounting using the surface mount method (see package illustration). ESD sensitive to Class 1. MAXIMUM RATINGS @ 25 ºC unless otherwise stated Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance, Junction-to-End Cap Average Rectified Output Current: (1) 5711 & 6263 types (2) 2810, 5712 & 6858 types (3) 6857 types Solder Temperature @ 10 s Symbol TJ and TSTG R ӨJEC Value -65 to +150 250 Unit ºC ºC/W IO 33 75 150 260 mA NOTES: 1. At T EC and T SP = +140 °C, derate I O to 0 at +150 °C. 2. At T EC and T SP = +130 °C, derate I O to 0 at +150 °C. 3. At T EC and T SP = +110°C, derate I O to 0 at +150 °C. o MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 C MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0040-1, Rev. 1 (6/4/13) ©2013 Microsemi Corporation Page 1 of 7 1N5711UR-1, 1N5712UR-1, 1N6857UR-1, and 1N6858UR-1 plus CDLL equivalents MECHANICAL and PACKAGING • • • • • • • • CASE: Hermetically sealed glass DO-213AA MELF (SOD-80, LL34) case package. TERMINALS: Tin/lead plated or RoHS compliant matte-tin (on commercial grade only) over copper clad steel. Solderable per MIL-STD-750, method 2026. POLARITY: Cathode end is banded. MOUNTING: The axial coefficient of expansion (COE) of this device is approximately +6PPM/°C. The COE of the mounting surface system should be selected to provide a suitable match with this device. MARKING: Part number. TAPE & REEL option: Standard per EIA-296. Consult factory for quantities. WEIGHT: Approximately 0.2 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N5711 UR -1 (e3) Reliability Level JAN = JAN level JANTX = JANTX level JANTXV = JANTXV level Blank = Commercial grade RoHS Compliance e3 = RoHS compliant (on commercial grade only) Blank = non-RoHS compliant Metallurgically Bonded JEDEC type number (see Electrical Characteristics table) MELF Surface Mount CDLL 2810 (e3) Microsemi Designation RoHS Compliance e3 = RoHS compliant Blank = non-RoHS compliant Series number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol C f IR IO t rr V (BR) Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage. frequency Reverse Current: The dc current flowing from the external circuit into the cathode terminal at the specified voltage V R. Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and a 180 degree conduction angle. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. Breakdown Voltage: A voltage in the breakdown region. VF Forward Voltage: A positive dc anode-cathode voltage the device will exhibit at a specified forward current. VR Reverse Voltage: A positive dc cathode-anode voltage below the breakdown region. Working Peak Reverse Voltage: The peak voltage excluding all transient voltages (ref JESD282-B). Also sometimes known historically as PIV. V RWM T4-LDS-0040-1, Rev. 1 (6/4/13) ©2013 Microsemi Corporation Page 2 of 7 1N5711UR-1, 1N5712UR-1, 1N6857UR-1, and 1N6858UR-1 plus CDLL equivalents ELECTRICAL CHARACTERISTICS @ T A = 25 ºC unless otherwise noted TYPE NUMBER 1N5711UR-1 1N5712UR-1 1N6857UR-1 1N6858UR-1 CDLL2810 CDLL5711 CDLL5712 CDLL6263 CDLL6857 CDLL6858 MINIMUM BREAKDOWN VOLTAGE MAXIMUM FORWARD VOLTAGE MAXIMUM FORWARD VOLTAGE WORKING PEAK REVERSE VOLTAGE V (BR) @ 10 µA Volts 70 20 20 70 20 70 20 60 20 70 V F @ 1 mA Volts 0.41 0.41 0.35 0.36 0.41 0.41 0.41 0.41 0.35 0.36 VF @ IF V @ mA 1.0 @ 15 1.0 @ 35 0.75 @ 35 0.65 @ 15 1.0 @ 35 1.0 @ 15 1.0 @ 35 1.0 @ 15 0.75 @ 35 0.65 @ 15 V RWM V (pk) 50 16 16 50 50 50 16 16 16 50 MAXIMUM REVERSE LEAKAGE CURRENT nA 200 150 150 200 100 200 150 200 150 200 IR @ VR Volts 50 16 16 50 15 50 16 50 16 50 MAXIMUM CAPACITANCE @ VR = 0 VOLTS f = 1.0 MHz CT pF 2.0 2.0 4.5 4.5 2.0 2.0 2.0 2.2 4.5 4.5 NOTE: 1. Effective minority carrier lifetime (τ) is 100 pico seconds. T4-LDS-0040-1, Rev. 1 (6/4/13) ©2013 Microsemi Corporation Page 3 of 7 1N5711UR-1, 1N5712UR-1, 1N6857UR-1, and 1N6858UR-1 plus CDLL equivalents IF – Forward Current (mA) GRAPHS V F – Forward Voltage (V) IR – Reverse Current (nA) FIGURE 1 I-V Curve showing typical Forward Voltage Variation Temperature for the 1N5712UR-1, CDLL5712 and CDLL2810 Schottky Diodes V R – Reverse Voltage (V) (PULSED) FIGURE 2 1N5712UR-1, CDLL5712 and CDLL2810 Typical variation of Reverse Current (I R ) vs Reverse Voltage (V R ) at Various Temperatures T4-LDS-0040-1, Rev. 1 (6/4/13) ©2013 Microsemi Corporation Page 4 of 7 1N5711UR-1, 1N5712UR-1, 1N6857UR-1, and 1N6858UR-1 plus CDLL equivalents IF – Forward Current (mA) GRAPHS V F – Forward Voltage (V) IR – Reverse Current (nA) FIGURE 3 I – V curve showing typical Forward Voltage Variation With Temperature Schottky Diode 1N5711UR-1 V R – Reverse Voltage (V) (PULSED) FIGURE 4 1N5711UR-1 Typical Variation of Reverse Current (I R ) vs Reverse Voltage (V R ) at Various Temperatures T4-LDS-0040-1, Rev. 1 (6/4/13) ©2013 Microsemi Corporation Page 5 of 7 1N5711UR-1, 1N5712UR-1, 1N6857UR-1, and 1N6858UR-1 plus CDLL equivalents RD – Dynamic Resistance (Ohms) GRAPHS I F – Forward Current (mA) (PULSED) FIGURE 5 Typical Dynamic Resistance (R D ) vs Forward Current (I F ) T4-LDS-0040-1, Rev. 1 (6/4/13) ©2013 Microsemi Corporation Page 6 of 7 1N5711UR-1, 1N5712UR-1, 1N6857UR-1, and 1N6858UR-1 plus CDLL equivalents PACKAGE DIMENSIONS DIM BD BL ECT S INCH MIN MAX 0.063 0.067 0.130 0.146 0.016 0.022 0.001 min MILLIMETERS MIN MAX 1.60 1.70 3.30 3.71 0.41 0.56 0.03 min NOTES: 1. Dimensions are in inches. Millimeters are given for information only. 2. Dimensions are pre-solder dip. 3. Referencing to dimension S, minimum clearance of glass body to mounting surface on all orientations. 4. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. PAD LAYOUT A B C T4-LDS-0040-1, Rev. 1 (6/4/13) ©2013 Microsemi Corporation INCH 0.200 0.055 0.080 mm 5.08 1.40 2.03 Page 7 of 7