CDLL5819/TR

1N5818UR-1, 1N5819UR-1, 1N6761UR-1 and CDLL variants Available on commercial versions Qualified Levels*: JAN, JANTX, JANTXV and JANS 1 Amp Schottky Barrier Rectifiers Qualified per MIL-PRF-19500/586 DESCRIPTION This 1 Amp schottky barrier rectifier is metallurgically bonded and offers military grade qualifications for the part numbers of 1N5819UR-1 and 1N6761UR-1 for high-reliability applications. This small diode is hermetically sealed and bonded into a DO-213AB MELF glass package. DO-213AB (MELF, LL41) Package Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 1N5818, 1N5819 and 1N6761 numbers. • Hermetically sealed DO-41 glass package. • Metallurgically bonded. • *1N5819UR-1 and 1N6761UR-1 only are available in JAN, JANTX, JANTXV and JANS qualifications per MIL-PRF-19500/586. Also available in: DO-41 package (See part nomenclature for all available options.) • (axial-leaded) 1N5818-1, 1N5819-1, 1N6759-1 – 1N6761-1 and DSB variants RoHS compliant versions available (commercial grade only). APPLICATIONS / BENEFITS • • • • Small size for high density mounting using flexible thru-hole leads (see package illustration). Low reverse (leakage) currents. Non-sensitive to ESD per MIL-STD-750 test method 1020 (human body model). Inherently radiation hard as described in Microsemi “MicroNote 050”. MAXIMUM RATINGS @ T A = +25 ºC unless otherwise specified Parameters/Test Conditions Storage Temperature Junction Temperature Thermal Resistance, Junction-to-Lead Thermal Resistance, Junction-to-Ambient Average Rectified Output Current @ T A = 55 ºC on PCB board Surge Peak Forward Current Solder Temperature @ 10 s 1N5819UR-1 1N6761UR-1 Symbol T STG TJ R ӨJEC R ӨJA IO Value -65 to +150 -65 to +125 -65 to +150 40 220 1.0 I FSM NOTE: 1. T EC = 55 ºC for the 1N5819UR-1 and T EC = 37 ºC for the 1N6761UR-1. 25 260 Unit ºC ºC ºC/W ºC/W A A C o MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0301-1, Rev. 1 (6/25/13) ©2013 Microsemi Corporation Page 1 of 6 1N5818UR-1, 1N5819UR-1, 1N6761UR-1 and CDLL variants MECHANICAL and PACKAGING • • • • • • • • CASE: Hermetically sealed glass DO-213AB MELF (LL41) package. TERMINALS: Tin/lead or RoHS compliant matte-tin finished copper clad steel available (commercial grade only). Solderable per MIL-STD-750, method 2026. MARKING: Cathode band. POLARITY: Diode to be operated with the banded end positive with respect to the opposite end for Zener regulation. MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) of this device is approximately +6PPM/°C. The COE of the Mounting Surface System should be selected to provide a suitable match with this device. TAPE & REEL optional: Standard per EIA-481-1-A with 12 mm tape. Consult factory for quantities. WEIGHT: Approximately 0.05 grams. See Package Dimensions on last page. PART NOMENCLATURE 1N5818UR-1, 1N5819UR-1* and 1N6761UR-1*: JAN 1N5819 UR -1 (e3) Reliability Level JAN = JAN level* JANTX = JANTX level* JANTXV = JANTXV level* JANS = JANS level* RoHS Compliance e3 = RoHS compliant (on commercial grade only) Blank = non-RoHS compliant *(applicable only to 1N5819UR-1 and 1N6761UR-1 numbers) Metallurgically Bonded Blank = Commercial grade MELF Surface Mount JEDEC type number (see Electrical Characteristics table) CDLL6759 – CDLL6761: CDLL 6759 (e3) Microsemi Designation RoHS Compliance e3 = RoHS compliant Blank = non-RoHS compliant Series number (see Electrical Characteristics table) CDLL1A20 – CDLL1A100: CDLL 1A 20 (e3) Microsemi Designation RoHS Compliance e3 = RoHS compliant Blank = non-RoHS compliant 1 Amp Rating 20 Volt Working Peak Reverse Voltage (V RWM ) T4-LDS-0301-1, Rev. 1 (6/25/13) ©2013 Microsemi Corporation Page 2 of 6 1N5818UR-1, 1N5819UR-1, 1N6761UR-1 and CDLL variants SYMBOLS & DEFINITIONS Definition Symbol CT f Total Capacitance: The total small signal capacitance between the diode terminals of a complete device. frequency Surge Peak Forward Current: The forward current including all nonrepetitive transient currents but excluding all repetitive transients (ref JESD282-B) Reverse Current: The dc current flowing from the external circuit into the cathode terminal at the specified voltage V R . Average Rectified Output Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and a 180 degree conduction angle. I FSM IR IO V (BR) Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. VF Forward Voltage: The positive anode-cathode voltage the device will exhibit at a specified I F current. VR Reverse Voltage: The dc voltage applied in the reverse direction below the breakdown region. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range excluding all transient voltages (ref JESD282-B). Also sometimes known as PIV. V RWM *ELECTRICAL CHARACTERISTICS @ T A = 25 °C unless otherwise specified TYPE NUMBER WORKING PEAK REVERSE (1) VOLTAGE 1N5818UR-1* †1N5819UR-1* CDLL6759 CDLL6760 †1N6761UR-1* CDLL1A20 CDLL1A30 CDLL1A40 CDLL1A50 CDLL1A60 CDLL1A80 CDLL1A100 V RWM Volts 30 45 60 80 100 20 30 40 50 60 80 100 MAXIMUM FORWARD VOLTAGE V F @ 0.1A Volts 0.36 0.34 0.38 0.38 0.38 0.36 0.36 0.36 0.36 0.38 0.38 0.38 V F @ 1.0 A Volts 0.60 0.49 0.69 0.69 0.69 0.60 0.60 0.60 0.60 0.69 0.69 0.69 MAXIMUM REVERSE LEAKAGE CURRENT AT RATED VOLTAGE I RM @ 25°C mA 0.10 0.05 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 0.10 I RM @ 100°C mA 5.0 5.0 6.0 6.0 12.0 5.0 5.0 5.0 5.0 12.0 12.0 12.0 MAXIMUM CAPACITANCE @ VR = 5 VOLTS f ≤ 1.0 MHz CT pF 0.9 70 NA NA 70 0.9 0.9 0.9 0.9 NA NA NA *Part number may also be ordered as CDLL5818 or CDLL5819 or CDLL6761. † Also available with JAN, JANTX, JANTXV, and JANS military qualifications. T4-LDS-0301-1, Rev. 1 (6/25/13) ©2013 Microsemi Corporation Page 3 of 6 1N5818UR-1, 1N5819UR-1, 1N6761UR-1 and CDLL variants IR, Reverse Current (mA) GRAPHS T J , Junction Temperature (ºC) IF, Forward Current, Instantaneous (Amps) FIGURE 1 Typical Reverse Leakage Current at Rated PIV (PULSED) V F , Forward Voltage, Instantaneous (Volts) FIGURE 2 Typical Forward Voltage for 1N5819UR-1 T4-LDS-0301-1, Rev. 1 (6/25/13) ©2013 Microsemi Corporation Page 4 of 6 1N5818UR-1, 1N5819UR-1, 1N6761UR-1 and CDLL variants Theta (ºC/W) GRAPHS (continued) Time (s) FIGURE 3 Thermal impedance for 1N5819UR-1 and 1N6761UR-1 (DO-213AB) T4-LDS-0301-1, Rev. 1 (6/25/13) ©2013 Microsemi Corporation Page 5 of 6 1N5818UR-1, 1N5819UR-1, 1N6761UR-1 and CDLL variants PACKAGE DIMENSIONS Symbol BD BL ECT S Dimensions Millimeters Min Max Min Max 0.094 0.105 2.39 2.67 0.189 0.205 4.80 5.21 0.016 0.022 0.41 0.56 0.001 min 0.03 min Inch NOTES: 1. Dimensions are in inches. Millimeters are given for information only. 2. Gap not controlled, shape of body and gap not controlled. 3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. PAD LAYOUT Ltr A B C T4-LDS-0301-1, Rev. 1 (6/25/13) ©2013 Microsemi Corporation Inch 0.276 0.070 0.110 mm 7.00 1.8 2.8 Page 6 of 6