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DSC1001CE1-033.0000

DSC1001CE1-033.0000

  • 厂商:

    ACTEL(微芯科技)

  • 封装:

    SMD-4

  • 描述:

    有源晶振 33MHz SMD-4

  • 详情介绍
  • 数据手册
  • 价格&库存
DSC1001CE1-033.0000 数据手册
DSC1001/3/4 1.8V-3.3V Low-Power Precision CMOS Oscillators Features General Description • Frequency Range: 1 MHz to 150 MHz • Exceptional Stability over Temperature - ±10 ppm, ±20 ppm, ±25 ppm, ±50 ppm • Operating Voltage - 1.7 to 3.6V • Operating Temperature Range - Ext. Industrial –40°C to 105°C - Industrial –40°C to 85°C - Commercial –20°C to 70°C • Low Operating and Standby Current - 6 mA Operating (1 MHz) - 15 µA Standby (Max.) • Ultra Miniature Footprint - 2.5 mm x 2.0 mm x 0.85 mm - 3.2 mm x 2.5 mm x 0.85 mm - 5.0 mm x 3.2 mm x 0.85 mm - 7.0 mm x 5.0 mm x 0.85 mm • MIL-STD 883 Shock and Vibration Resistant • Pb Free, RoHS, Reach SVHC Compliant • AEC-Q100 Reliability Qualified The DSC1001/3/4 is a silicon MEMS based CMOS family of oscillators that offers excellent jitter and stability performance over a wide range of supply voltages and temperatures. The device operates from 1 MHz to 150 MHz with supply voltages between 1.8 to 3.3 volts and temperature ranges up to –40°C to 105°C. Applications • • • • • • Mobile Applications Consumer Electronics Portable Electronics DVR, CCTV, Surveillance Cameras Low Profile Applications Industrial Applications The DSC1001/3/4 incorporate an all silicon resonator that is extremely robust and nearly immune to stress related fractures, common to crystal based oscillators. Without sacrificing the performance and stability required of today’s systems, a crystal-less design allows for a higher level of reliability, making the DSC1001/3/4 ideal for rugged, industrial, and portable applications where stress, shock, and vibration can damage quartz crystal based systems. Available in industry standard packages, the DSC1001/3/4 can be “dropped-in” to the same PCB footprint as standard crystal oscillators. The DSC1003 and DSC1004 have the same functionality and performance as the DSC1001, but feature higher output drives of 25 pF and 40 pF, respectively. Package Types DSC1001/3/4 CDFN/DFN (Top View) STANDBY# 1 4 VDD GND 2 3 OUT Benefits • Pin for Pin “Drop-In” Replacement for Industry Standard Oscillators • Semiconductor Level Reliability, Significantly Higher than Quartz • Short Mass Production Lead Times • Longer Battery Life/Reduced Power Consumption • Compact Plastic Package • Cost Effective  2017 Microchip Technology Inc. DS20005529B-page 1 DSC1001/3/4 Block Diagram VDD RESONATOR OUTPUT VCO PFD FRAC -N FRAC-N PLL STANDBY# GND (PIN1) DS20005529B-page 2  2017 Microchip Technology Inc. DSC1001/3/4 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † Input Voltage (VIN) ............................................................................................................................–0.3V to VDD + 0.3V ESD Protection ....................................................................................................... 4 kV HBM, ±200V MM, 1.5 kV CDM Recommended Operating Conditions Supply Voltage (VDD) ................................................................................................................................ +1.7V to +3.6V Output Load (ZL) ............................................................................................................................. R > 10 kΩ, C ≤ 15 pF † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Electrical Characteristics: VDD = 1.8 to 3.3V; TA = +85°C unless otherwise specified. Parameters Sym. Frequency F0 Frequency Tolerance ∆f Min. Typ. Max. Units MHz Single Frequency ppm Includes frequency variations due to initial tolerance, temperature and power supply voltage 1 year @ +25°C 1 — 150 — — ±10 — — ±20 — — ±25 — — ±50 Conditions Aging ∆f — — ±5 ppm Supply Current, Standby IDD — — 15 µA T = +25°C Output Startup Time (Note 1) tSU — 1.0 1.3 ms T = +25°C Output Disable Time tDA — 20 100 ns — SYM 45 — 55 % — Input Logic Level High VIH 0.75 x VDD — — V — Input Logic Level Low VIL — — 0.25 x VDD V — — 6.0 6.3 — 6.5 7.1 — 7.2 8.5 — 8.3 11.9 0.8 x VDD — — 0.8 x VDD — — 0.8 x VDD — — –4 mA, DSC1001, CL = 15 pF — — 0.2 x VDD 6 mA, DSC1004, CL = 40 pF — — 0.2 x VDD — — 0.2 x VDD Output Duty Cycle VDD = 1.8V Supply Current, No Load Output Logic Level High Output Logic Level Low IDD VOH VOL 1 MHz mA 27 MHz 70 MHz CL = 0 pF, RL = ∞, T = +25°C 150 MHz –6 mA, DSC1004, CL = 40 pF V V –6 mA, DSC1003, CL = 25 pF 6 mA, DSC1003, CL = 25 pF 4 mA, DSC1001, CL = 15 pF Note 1: tSU is time to stable output frequency after VDD is applied. tSU and tEN (after EN is asserted) are identical values. 2: Measured over 50k clock cycles.  2017 Microchip Technology Inc. DS20005529B-page 3 DSC1001/3/4 TABLE 1-1: DC CHARACTERISTICS (CONTINUED) Electrical Characteristics: VDD = 1.8 to 3.3V; TA = +85°C unless otherwise specified. Parameters Output Transition Rise Time Output Transition Fall Time Jitter, Max. Cycle-to-Cycle Period Jitter Sym. Min. Typ. Max. — 1.4 3.0 — 1.5 3.0 — 1.8 3.0 DSC1004, C2 = 40 pF — 1.0 3.0 DSC1001, CL = 15 pF — 1.1 3.0 — 1.2 3.0 JCC — 60 — ps f = 100 MHz (Note 2) JP — 10 15 psRMS f = 100 MHz (Note 2) — 6.0 6.4 — 6.7 7.5 — 7.7 9.4 — 9.6 13.9 0.9 x VDD — — 0.8 x VDD — — 0.8 x VDD — — –4 mA, DSC1001, CL = 15 pF — — 0.1 x VDD 6 mA, DSC1004, CL = 40 pF — — 0.2 x VDD — — 0.2 x VDD — 1.0 2.0 — 1.1 2.0 — 1.2 2.0 DSC1004, C2 = 40 pF — 0.9 2.0 DSC1001, CL = 15 pF — 1.0 2.0 — 1.1 2.0 tR tF Units Conditions DSC1001, CL = 15 pF ns ns DSC1003, CL = T = +25°C, 25 pF 20% to 80% DSC1003, CL = T = +25°C, 25 pF 20% to 80% DSC1004, C2 = 40 pF VDD = 2.5V Supply Current, No Load Output Logic Level High Output Logic Level Low Output Transition Rise Time Output Transition Fall Time IDD VOH VOL tR tF 1 MHz mA 27 MHz 70 MHz CL = 0 pF, RL = ∞, T = +25°C 150 MHz –6 mA, DSC1004, CL = 40 pF V V –6 mA, DSC1003, CL = 25 pF 6 mA, DSC1003, CL = 25 pF 4 mA, DSC1001, CL = 15 pF DSC1001, CL = 15 pF ns ns DSC1003, CL = T = +25°C, 25 pF 20% to 80% DSC1003, CL = T = +25°C, 25 pF 20% to 80% DSC1004, C2 = 40 pF Note 1: tSU is time to stable output frequency after VDD is applied. tSU and tEN (after EN is asserted) are identical values. 2: Measured over 50k clock cycles. DS20005529B-page 4  2017 Microchip Technology Inc. DSC1001/3/4 TABLE 1-1: DC CHARACTERISTICS (CONTINUED) Electrical Characteristics: VDD = 1.8 to 3.3V; TA = +85°C unless otherwise specified. Parameters Sym. Min. Typ. Max. Units JCC — 50 — ps f = 100 MHz (Note 2) JP — 5 10 psRMS f = 100 MHz (Note 2) — 6.0 6.5 — 6.8 8.0 — 8.2 10.5 — 10.8 16.6 0.9 x VDD — — 0.9 x VDD — — 0.8 x VDD — — –4 mA, DSC1001, CL = 15 pF — — 0.1 x VDD 8 mA, DSC1004, CL = 40 pF — — 0.1 x VDD — — 0.2 x VDD — 1.0 2.0 — 1.1 2.0 — 1.2 2.0 DSC1004, C2 = 40 pF — 0.9 2.0 DSC1001, CL = 15 pF — 1.0 2.0 — 1.1 2.0 JCC — 50 — ps f = 100 MHz (Note 2) JP — 5 10 psRMS f = 100 MHz (Note 2) Jitter, Max. Cycle-to-Cycle Period Jitter Conditions VDD = 3.3V Supply Current, No Load Output Logic Level High Output Logic Level Low Output Transition Rise Time Output Transition Fall Time Jitter, Max. Cycle-to-Cycle Period Jitter IDD VOH VOL tR tF 1 MHz mA CL = 0 pF, RL = ∞, T = +25°C 27 MHz 70 MHz 150 MHz –8 mA, DSC1004, CL = 40 pF V V –6 mA, DSC1003, CL = 25 pF 6 mA, DSC1003, CL = 25 pF 4 mA, DSC1001, CL = 15 pF DSC1001, CL = 15 pF ns ns DSC1003, CL = T = +25°C, 20% to 80% 25 pF DSC1003, CL = T = +25°C, 20% to 80% 25 pF DSC1004, C2 = 40 pF Note 1: tSU is time to stable output frequency after VDD is applied. tSU and tEN (after EN is asserted) are identical values. 2: Measured over 50k clock cycles.  2017 Microchip Technology Inc. DS20005529B-page 5 DSC1001/3/4 TEMPERATURE SPECIFICATIONS (Note 1) Parameters Sym. Min. Typ. Max. Units –40 — +105 °C Conditions Temperature Ranges Operating Temperature Range (T) TA Ordering Option L –40 — +85 °C Ordering Option I –20 — +70 °C Ordering Option E Junction Operating Temperature TJ — — +150 °C — Storage Temperature Range TA –55 — +150 °C — Soldering Temperature Range TS — — +260 °C 40 sec. max Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum +150°C rating. Sustained junction temperatures above +150°C can impact the device reliability. DS20005529B-page 6  2017 Microchip Technology Inc. DSC1001/3/4 2.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 2-1 and Table 2-2. TABLE 2-1: CDFN PACKAGE PIN FUNCTION TABLE Pin Number Symbol 1 STANDBY# 2 GND Power supply ground 3 OUT Oscillator output 4 VDD Positive power supply TABLE 2-2: Description Standby input (Section 4.1 “Standby Function”) DFN PACKAGE PIN FUNCTION TABLE Pin Number Symbol Description 1 STANDBY# 2 GND Power supply ground 3 OUT Oscillator output 4 VDD Positive power supply Center Pad NC  2017 Microchip Technology Inc. Standby input (Section 4.1 “Standby Function”) Tie to GND or do not connect. DS20005529B-page 7 DSC1001/3/4 3.0 Note: NOMINAL PERFORMANCE CHARACTERISTICS The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. FIGURE 3-1: Supply Current. FIGURE 3-4: Supply Current. FIGURE 3-2: Rise Time. FIGURE 3-5: Fall Time. FIGURE 3-3: Rise Time. FIGURE 3-6: Fall Time. DS20005529B-page 8  2017 Microchip Technology Inc. DSC1001/3/4 4.0 OUTPUT WAVEFORM tR tF VOH OUTPUT VOL tEN 1/fo tDA STANDBY# FIGURE 4-1: 4.1 VIH VIL Output Waveform. Standby Function Standby# (Pin 1) Output (Pin 3) High Level Output ON Open (no connect) Output ON Low Level High Impedance  2017 Microchip Technology Inc. DS20005529B-page 9 DSC1001/3/4 5.0 TEST CIRCUIT IDD VDD 0.01μF 4 3 1 2 15pF *VSD *VSD = Standby# Logic Level Input FIGURE 5-1: DS20005529B-page 10 DSC1001/3/4 Test Circuit.  2017 Microchip Technology Inc. DSC1001/3/4 6.0 BOARD LAYOUT (RECOMMENDED) Via to GND Layer C1 VDD Standby FIGURE 6-1: Output GND Via to GND Layer Recommended Board Layout for DSC1001/3/4.  2017 Microchip Technology Inc. DS20005529B-page 11 DSC1001/3/4 7.0 SOLDER REFLOW PROFILE /Se 3C . ax cM /Se 3C ReŇow Pre heat 8 min max x. 25°C FIGURE 7-1: 60-180 Sec Ma 150°C 60-150 Sec Sec 217°C 200°C 6C/ Temperature (°C) cM ax . 260°C 20-40 Sec Cool Time Solder Reflow Profile. MSL 1 @ 260°C refer to JSTD-020C Ramp-Up Rate (200°C to Peak Temp) 3°C/sec. max. Preheat Time 150°C to 200°C 60 to 180 sec. Time maintained above 217°C 60 to 150 sec. Peak Temperature 255°C to 260°C Time within 5°C of Actual Peak 20 to 40 sec. Ramp-Down Rate 6°C/sec. max. Time 25°C to Peak Temperature 8 minutes max. DS20005529B-page 12  2017 Microchip Technology Inc. DSC1001/3/4 8.0 PACKAGING INFORMATION 8.1 Package Marking Information 4-Lead CDFN/DFN* XXXXXX DCPYYWW 0SSS Legend: XX...X Y YY WW NNN e3 * Example 0400000 DCP1121 0603 Product code, customer-specific information, or frequency in MHz without printed decimal point Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC® designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. ●, ▲, ▼ Pin one index is identified by a dot, delta up, or delta down (triangle mark). Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. Package may or may not include the corporate logo. Underbar (_) and/or Overbar (⎯) symbol may not be to scale.  2017 Microchip Technology Inc. DS20005529B-page 13 DSC1001/3/4 4-Lead DFN 7.0 mm x 5.0 mm Package Outline & Recommended Land Pattern Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging. DS20005529B-page 14  2017 Microchip Technology Inc. DSC1001/3/4 4-Lead CDFN 5.0 mm x 3.2 mm Package Outline & Recommended Land Pattern  2017 Microchip Technology Inc. DS20005529B-page 15 DSC1001/3/4 4-Lead CDFN 3.2 mm x 2.5 mm Package Outline & Recommended Land Pattern DS20005529B-page 16  2017 Microchip Technology Inc. DSC1001/3/4 4-Lead CDFN 2.5 mm x 2.0 mm Package Outline & Recommended Land Pattern  2017 Microchip Technology Inc. DS20005529B-page 17 DSC1001/3/4 NOTES: DS20005529B-page 18  2017 Microchip Technology Inc. DSC1001/3/4 APPENDIX A: REVISION HISTORY Revision A (September 2017) • Converted Micrel data sheet DSC1001 to Microchip format data sheet DS20005529A. • Minor text changes throughout. • Added Table 2-2 for DFN package. • Combined Micrel data sheet DSC1003 and DSC1004 into this data sheet. - Updated Section 1.0 “Electrical Characteristics” to reflect this change. - Updated General Description and Features to reflect this change. Revision B (November 2017) • Updated VOH and VOL values in Table 1-1.  2017 Microchip Technology Inc. DS20005529B-page 19 DSC1001/3/4 NOTES: DS20005529B-page 20  2017 Microchip Technology Inc. DSC1001/3/4 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office. PART NO. Device Device: X X X -XXX.XXXX Examples: a) 1.8V - 3.3V Low-Power Precision CMOS Oscillator, 4Lead 7.0 mm x 5.0 mm DFN, Ext. Commercial Temperature Range, ±50 ppm, DSC1001/3/4: 1.8V - 3.3V Low-Power Precision CMOS Oscillator = = = = 4-Lead 7.0 mm x 5.0 mm DFN 4-Lead 5.0 mm x 3.2 mm CDFN 4-Lead 3.2 mm x 2.5 mm CDFN 4-Lead 2.5 mm x 2.0 mm CDFN Temperature Range: E I L = = = –20C to +70C (Extended Commercial) –40C to +85C (Industrial) –40C to +105C (Extended Industrial) Stability: 1 2 3 5 = = = = ±50ppm ±25ppm ±20 ppm ±10 ppm Frequency: xxx.xxxx b) = T = 10 MHz Output Frequency, 1,000/Reel DSC1003BL2-030.0000:  1.8V - 3.3V Low-Power Precision CMOS Oscillator, 4Lead 5.0 mm x 3.2 mm CDFN, Ext. Industrial Temperature Range, ±25 ppm, c) Packing Option: DSC1001AE1-010.0000T:  Package Temperature Stability Frequency Package Range A B C D Package: X 30 MHz Output quency, 110/Tube DSC1001DE5-150.0000:  1.8V - 3.3V Low-Power Precision CMOS Oscillator, 4Lead 2.5 mm x 2.0 mm CDFN, Ext. Commercial Temperature Range, ±10 ppm, 150 MHz Output = 1 MHz to 150 MHz (user-defined) 110/Tube 1,000/Reel Fre- Frequency, 110/Tube d) DSC1004AI3-075.0000T:  1.8V - 3.3V Low-Power Precision CMOS Oscillator, 4-Lead 7.0 mm x 5.0 mm DFN, Industrial Temperature Range, ±20 ppm, 75 MHz  Output Frequency, 1,000/Reel Note 1:  2017 Microchip Technology Inc. Tape and Reel identifier only appears in the catalog part number description. This identifier is used for ordering purposes and is not printed on the device package. Check with your Microchip Sales Office for package availability with the Tape and Reel option. DS20005529B-page 21 DSC1001/3/4 NOTES: DS20005529B-page 22  2017 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV Trademarks The Microchip name and logo, the Microchip logo, AnyRate, AVR, AVR logo, AVR Freaks, BeaconThings, BitCloud, CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KEELOQ, KEELOQ logo, Kleer, LANCheck, LINK MD, maXStylus, maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB, OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip Designer, QTouch, RightTouch, SAM-BA, SpyNIC, SST, SST Logo, SuperFlash, tinyAVR, UNI/O, and XMEGA are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. ClockWorks, The Embedded Control Solutions Company, EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS, mTouch, Precision Edge, and Quiet-Wire are registered trademarks of Microchip Technology Incorporated in the U.S.A. Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo, CodeGuard, CryptoAuthentication, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, Mindi, MiWi, motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PureSilicon, QMatrix, RightTouch logo, REAL ICE, Ripple Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI, SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2017, Microchip Technology Incorporated, All Rights Reserved. ISBN: 978-1-5224-2389-8 == ISO/TS 16949 ==  2017 Microchip Technology Inc. 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DSC1001CE1-033.0000
物料型号:DSC1001/3/4 器件简介:DSC1001/3/4 是基于硅 MEMS 的 CMOS 振荡器系列,提供出色的抖动和稳定性能,适用于 1 MHz 至 150 MHz 的频率范围和 1.8 至 3.3 伏的供电电压,温度范围高达 -40°C 至 105°C。

引脚分配: - STANDBY# (Pin 1): 待机输入 - GND (Pin 2 和 Pin 3): 电源地 - OUT (Pin 3): 振荡器输出 - VDD (Pin 4): 正电源 参数特性: - 频率范围:1 MHz 至 150 MHz - 温度稳定性:±10 ppm, ±20 ppm, ±25 ppm, ±50 ppm - 工作电压:1.7 至 3.6V - 工作温度范围:-40°C 至 105°C(扩展工业级) - 低功耗:6 mA(1 MHz 工作状态)和 15 µA(最大待机状态) - 超小型封装:2.5 mm x 2.0 mm x 0.85 mm 至 7.0 mm x 5.0 mm x 0.85 mm - 抗冲击和抗振:符合 MIL-STD 883 标准 - 无铅、RoHS 兼容、REACH SVHC 合规 - AEC-Q100 可靠性认证 功能详解:DSC1001/3/4 包含全硅谐振器,非常坚固,几乎不受应力相关断裂的影响,这在基于晶体的振荡器中很常见。

无需牺牲当今系统所需的性能和稳定性,无晶片设计允许更高水平的可靠性,使 DSC1001/3/4 非常适合在压力、冲击和振动可能损坏基于石英晶体系统的坚固、工业和便携式应用中使用。

应用信息: - 移动应用 - 消费电子 - 便携式电子 - 录像机、闭路电视、监控摄像头 - 低剖面应用 - 工业应用 封装信息:DSC1001/3/4 有多种行业标准封装,可以作为标准晶体振荡器的“即插即用”替代品。

DSC1003 和 DSC1004 与 DSC1001 具有相同的功能和性能,但分别具有 25 pF 和 40 pF 的更高输出驱动能力。
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