Revision 10
eX Family FPGAs
Leading Edge Performance
•
240 MHz System Performance
•
350 MHz Internal Performance
•
3.9 ns Clock-to-Out (Pad-to-Pad)
Specifications
•
3,000 to 12,000 Available System Gates
•
Maximum 512 Flip-Flops (Using CC Macros)
•
0.22 µm CMOS Process Technology
•
Up to 132 User-Programmable I/O Pins
Features
•
High-Performance, Low-Power Antifuse FPGA
•
LP/Sleep Mode for Additional Power Savings
•
Advanced Small-Footprint Packages
•
Hot-Swap Compliant I/Os
•
Single-Chip Solution
•
Nonvolatile
•
Live on Power-Up
•
No Power-Up/Down Sequence Required for Supply
Voltages
•
Configurable Weak-Resistor Pull-Up or Pull-Down for
Tristated Outputs during Power-Up
•
Individual Output Slew Rate Control
•
2.5 V, 3.3 V, and 5.0 V Mixed-Voltage Operation with
5.0V Input Tolerance and 5.0V Drive Strength
•
Software Design Support with Microsemi Designer and
Libero® Integrated Design Environment (IDE) Tools
•
Up to 100% Resource Utilization with 100% Pin Locking
•
Deterministic Timing
•
Unique In-System Diagnostic and Verification Capability
with Silicon Explorer II
•
Boundary Scan Testing in Compliance with IEEE
Standard 1149.1 (JTAG)
•
Fuselock™ Secure Programming Technology Designed
to Prevent Reverse Engineering and Design Theft
Product Profile
Device
eX64
eX128
eX256
3,000
2,000
6,000
4,000
12,000
8,000
Register Cells
Dedicated Flip-Flops
Maximum Flip-Flops
64
128
128
256
256
512
Combinatorial Cells
128
256
512
Maximum User I/Os
84
100
132
Global Clocks
Hardwired
Routed
1
2
1
2
1
2
Speed Grades
–F, Std, –P
–F, Std, –P
–F, Std, –P
Temperature Grades*
C, I, A
C, I, A
C, I, A
Package (by pin count)
TQ
64, 100
64, 100
100
Capacity
System Gates
Typical Gates
Note: *Refer to the eX Automotive Family FPGAs datasheet for details on automotive temperature offerings.
October 2012
© 2012 Microsemi Corporation
I
Ordering Information
eX128
TQ
P
G
100
Application (Ambient Temperature Range)
Blank
= Commercial (0°C to 70°C)
I = Industrial (-40°C to 85°C)
A = Automotive (-40°C to 125°C)
PP = Pre-production
Package Lead Count
Lead-Free Packaging
Blank = Standard Packaging
G = RoHS Compliant Packaging
Package Type
TQ = Thin Quad Flat Pack (0.5 mm pitch)
Speed Grade
Blank = Standard Speed
P = Approximately 30% Faster than Standard
F = Approximately 40% Slower than Standard
Part Number
eX64 = 64 Dedicated Flip-Flops (3,000 System Gates)
eX128 = 128 Dedicated Flip-Flops (6,000 System Gates)
eX256 = 256 Dedicated Flip-Flops (12,000 System Gates)
eX Device Status
eX Devices
Status
eX64
Production
eX128
Production
eX256
Production
Plastic Device Resources
User I/Os (Including Clock Buffers)
Device
TQ64
TQ100
eX64
41
56
eX128
46
70
eX256
—
81
Note: TQ = Thin Quad Flat Pack
II
R evis i o n 10
eX Family FPGAs
Temperature Grade Offerings
Device\ Package
TQ64
TQ100
eX64
C, I, A
C, I, A
eX128
C, I, A
C, I, A
eX256
C, I, A
C, I, A
Note: C = Commercial
I = Industrial
A = Automotive
Speed Grade and Temperature Grade Matrix
–F
Std
–P
✓
✓
✓
I
✓
✓
A
✓
C
Note: P = Approximately 30% faster than Standard
–F = Approximately 40% slower than Standard
Refer to the eX Automotive Family FPGAs datasheet for details on automotive temperature offerings.
Contact your local Microsemi representative for device availability.
R ev i si o n 1 0
III
eX Family FPGAs
Table of Contents
eX FPGA Architecture and Characteristics
General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-1
eX Family Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-1
Other Architectural Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-5
Design Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-13
Related Documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-15
2.5 V / 3.3 V /5.0 V Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-16
2.5 V LVCMOS2 Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-17
3.3 V LVTTL Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-18
5.0 V TTL Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-18
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-19
Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-21
Package Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-21
eX Timing Model
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-22
Output Buffer Delays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-23
AC Test Loads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-23
Input Buffer Delays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-24
C-Cell Delays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-24
Cell Timing Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-25
Timing Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-26
eX Family Timing Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-27
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-31
Package Pin Assignments
TQ64 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-1
TQ100 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3
Datasheet Information
List of Changes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-1
Datasheet Categories . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-4
Export Administration Regulations (EAR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-4
R ev i si o n 1 0
IV
1 – eX FPGA Architecture and Characteristics
General Description
The eX family of FPGAs is a low-cost solution for low-power, high-performance designs. The inherent
low power attributes of the antifuse technology, coupled with an additional low static power mode, make
these devices ideal for power-sensitive applications. Fabricated with an advanced 0.22 mm CMOS
antifuse technology, these devices achieve high performance with no power penalty.
eX Family Architecture
Microsemi eX family is implemented on a high-voltage twin-well CMOS process using 0.22 µm design
rules. The eX family architecture uses a “sea-of-modules” structure where the entire floor of the device is
covered with a grid of logic modules with virtually no chip area lost to interconnect elements or routing.
Interconnection among these logic modules is achieved using Microsemi patented metal-to-metal
programmable antifuse interconnect elements. The antifuse interconnect is made up of a combination of
amorphous silicon and dielectric material with barrier metals and has an "on" state resistance of 25 with
a capacitance of 1.0fF for low-signal impedance. The antifuses are normally open circuit and, when
programmed, form a permanent low-impedance connection. The eX family provides two types of logic
modules, the register cell (R-cell) and the combinatorial cell (C-cell).
The R-cell contains a flip-flop featuring asynchronous clear, asynchronous preset, and clock enable
(using the S0 and S1 lines) control signals (Figure 1-1). The R-cell registers feature programmable clock
polarity selectable on a register-by-register basis. This provides additional flexibility while allowing
mapping of synthesized functions into the eX FPGA. The clock source for the R-cell can be chosen from
either the hard-wired clock or the routed clock.
The C-cell implements a range of combinatorial functions up to five inputs (Figure 1-2 on page 1-2).
Inclusion of the DB input and its associated inverter function enables the implementation of more than
4,000 combinatorial functions in the eX architecture in a single module.
Two C-cells can be combined together to create a flip-flop to imitate an R-cell via the use of the CC
macro. This is particularly useful when implementing non-timing-critical paths and when the design
engineer is running out of R-cells. More information about the CC macro can be found in the Maximizing
Logic Utilization in eX, SX and SX-A FPGA Devices Using CC Macros application note.
S0
Routed
Data Input
S1
PSET
DirectConnect
Input
D
Q
Y
HCLK
CLKA,
CLKB,
Internal Logic
CLR
CKS
Figure 1-1 •
CKP
R-Cell
R ev i si o n 1 0
1-1
eX FPGA Architecture and Characteristics
Module Organization
C-cell and R-cell logic modules are arranged into horizontal banks called Clusters, each of which
contains two C-cells and one R-cell in a C-R-C configuration.
Clusters are further organized into modules called SuperClusters for improved design efficiency and
device performance, as shown in Figure 1-3. Each SuperCluster is a two-wide grouping of Clusters.
D0
D1
Y
D2
D3
Sa
Sb
DB
A1 B1
A0 B0
Figure 1-2 •
C-Cell
R-Cell
S0
C-Cell
Routed
Data Input S1
D0
D1
PSET
Y
D2
DirectConnect
Input
Q
D
D3
Y
Sb
Sa
HCLK
CLKA,
CLKB,
Internal Logic
CLR
CKS
DB
CKP
A0
Cluster
Cluster
SuperCluster
Figure 1-3 •
1- 2
Cluster Organization
R ev isio n 1 0
B0
A1
B1
eX Family FPGAs
Routing Resources
Clusters and SuperClusters can be connected through the use of two innovative local routing resources
called FastConnect and DirectConnect, which enable extremely fast and predictable interconnection of
modules within Clusters and SuperClusters (Figure 1-4). This routing architecture also dramatically
reduces the number of antifuses required to complete a circuit, ensuring the highest possible
performance.
DirectConnect is a horizontal routing resource that provides connections from a C-cell to its neighboring
R-cell in a given SuperCluster. DirectConnect uses a hard-wired signal path requiring no programmable
interconnection to achieve its fast signal propagation time of less than 0.1 ns (–P speed grade).
FastConnect enables horizontal routing between any two logic modules within a given SuperCluster and
vertical routing with the SuperCluster immediately below it. Only one programmable connection is used
in a FastConnect path, delivering maximum pin-to-pin propagation of 0.3 ns (–P speed grade).
In addition to DirectConnect and FastConnect, the architecture makes use of two globally oriented
routing resources known as segmented routing and high-drive routing. The segmented routing structure
of Microsemi provides a variety of track lengths for extremely fast routing between SuperClusters. The
exact combination of track lengths and antifuses within each path is chosen by the fully automatic placeand-route software to minimize signal propagation delays.
DirectConnect
• No antifuses
• 0.1 ns routing delay
SuperClusters
FastConnect
• One antifuse
• 0.5 ns routing delay
Routing Segments
• Typically 2 antifuses
• Max. 5 antifuses
Figure 1-4 •
DirectConnect and FastConnect for SuperClusters
Clock Resources
eX’s high-drive routing structure provides three clock networks. The first clock, called HCLK, is hardwired
from the HCLK buffer to the clock select MUX in each R-Cell. HCLK cannot be connected to
combinational logic. This provides a fast propagation path for the clock signal, enabling the 3.9 ns clockto-out (pad-to-pad) performance of the eX devices. The hard-wired clock is tuned to provide a clock skew
of less than 0.1 ns worst case. If not used, the HCLK pin must be tied LOW or HIGH and must not be left
floating. Figure 1-5 describes the clock circuit used for the constant load HCLK.
HCLK does not function until the fourth clock cycle each time the device is powered up to prevent false
output levels due to any possible slow power-on-reset signal and fast start-up clock circuit. To activate
HCLK from the first cycle, the TRST pin must be reserved in the Design software and the pin must be tied
to GND on the board. (See the "TRST, I/O Boundary Scan Reset Pin" on page 1-32).
The remaining two clocks (CLKA, CLKB) are global routed clock networks that can be sourced from
external pins or from internal logic signals (via the CLKINT routed clock buffer) within the eX device.
CLKA and CLKB may be connected to sequential cells or to combinational logic. If CLKA or CLKB is
sourced from internal logic signals, the external clock pin cannot be used for any other input and must be
tied LOW or HIGH and must not float. Figure 1-6 describes the CLKA and CLKB circuit used in eX
devices.
R ev i si o n 1 0
1-3
eX FPGA Architecture and Characteristics
Table 1-1 describes the possible connections of the routed clock networks, CLKA and CLKB.
Unused clock pins must not be left floating and must be tied to HIGH or LOW.
Constant Load
Clock Network
HCLKBUF
Figure 1-5 •
eX HCLK Clock Pad
Clock Network
From Internal Logic
CLKBUF
CLKBUFI
CLKINT
CLKINTI
Figure 1-6 •
eX Routed Clock Buffer
Table 1-1 • Connections of Routed Clock Networks, CLKA and CLKB
Module
Pins
C-Cell
A0, A1, B0 and B1
R-Cell
CLKA, CLKB, S0, S1, PSET, and CLR
I/O-Cell
1- 4
EN
R ev isio n 1 0
eX Family FPGAs
Other Architectural Features
Performance
The combination of architectural features described above enables eX devices to operate with internal
clock frequencies exceeding 350 MHz for very fast execution of complex logic functions. The eX family is
an optimal platform upon which the functionality previously contained in CPLDs can be integrated. eX
devices meet the performance goals of gate arrays, and at the same time, present significant
improvements in cost and time to market. Using timing-driven place-and-route tools, designers can
achieve highly deterministic device performance.
User Security
Microsemi FuseLock advantage provides the highest level of protection in the FPGA industry against
unauthorized modifications. In addition to the inherent strengths of the architecture, special security
fuses that are intended to prevent internal probing and overwriting are hidden throughout the fabric of the
device. They are located such that they cannot be accessed or bypassed without destroying the rest of
the device, making Microsemi antifuse FPGAs highly resistant to both invasive and more subtle
noninvasive attacks.
Look for this symbol to ensure your valuable IP is secure. The FuseLock Symbol on the FPGA ensures
that the device is safeguarded to cryptographic attacks.
FuseLock
Figure 1-7 •
Fuselock
For more information, refer to Implementation of Security in Microsemi Antifuse FPGAs application note.
I/O Modules
Each I/O on an eX device can be configured as an input, an output, a tristate output, or a bidirectional
pin. Even without the inclusion of dedicated I/O registers, these I/Os, in combination with array registers,
can achieve clock-to-out (pad-to-pad) timing as fast as 3.9 ns. I/O cells in eX devices do not contain
embedded latches or flip-flops and can be inferred directly from HDL code. The device can easily
interface with any other device in the system, which in turn enables parallel design of system
components and reduces overall design time.
All unused I/Os are configured as tristate outputs by Microsemi's Designer software, for maximum
flexibility when designing new boards or migrating existing designs. Each I/O module has an available
pull-up or pull-down resistor of approximately 50 k that can configure the I/O in a known state during
power-up. Just shortly before VCCA reaches 2.5 V, the resistors are disabled and the I/Os will be
controlled by user logic.
R ev i si o n 1 0
1-5
eX FPGA Architecture and Characteristics
Table 1-2 describes the I/O features of eX devices. For more information on I/Os, refer to Microsemi eX,
SX-A, and RT54SX-S I/Os application note.
Table 1-2 • I/O Features
Function
Description
Input Buffer
Selection
Threshold •
Nominal Output Drive
Output Buffer
5.0V TTL
•
3.3V LVTTL
•
2.5V LVCMOS2
•
5.0V TTL/CMOS
•
3.3V LVTTL
•
2.5V LVCMOS 2
“Hot-Swap” Capability
•
I/O on an unpowered device does not sink current
•
Can be used for “cold sparing”
Selectable on an individual I/O basis
Individually selectable low-slew option
Power-Up
Individually selectable pull ups and pull downs during power-up (default is to power up in
tristate)
Enables deterministic power-up of device
VCCA and VCCI can be powered in any order
The eX family supports mixed-voltage operation and is designed to tolerate 5.0 V inputs in each case.
A detailed description of the I/O pins in eX devices can be found in "Pin Description" on page 1-31.
Hot-Swapping
eX I/Os are configured to be hot-swappable. During power-up/down (or partial up/down), all I/Os are
tristated, provided VCCA ramps up within a diode drop of VCCI. VCCA and VCCI do not have to be stable.
during power-up/down, and they do not require a specific power-up or power-down sequence in order to
avoid damage to the eX devices. In addition, all outputs can be programmed to have a weak resistor pullup or pull-down for output tristate at power-up. After the eX device is plugged into an electrically active
system, the device will not degrade the reliability of or cause damage to the host system. The device's
output pins are driven to a high impedance state until normal chip operating conditions are reached.
Please see the application note, Microsemi SX-A and RT54SX-S Devices in Hot-Swap and Cold-Sparing
Applications, which also applies to the eX devices, for more information on hot swapping.
Power Requirements
Power consumption is extremely low for the eX family due to the low capacitance of the antifuse
interconnects. The antifuse architecture does not require active circuitry to hold a charge (as do SRAM or
EPROM), making it the lowest-power FPGA architecture available today.
Low Power Mode
The eX family has been designed with a Low Power Mode. This feature, activated with setting the special
LP pin to HIGH for a period longer than 800 ns, is particularly useful for battery-operated systems where
battery life is a primary concern. In this mode, the core of the device is turned off and the device
consumes minimal power with low standby current. In addition, all input buffers are turned off, and all
outputs and bidirectional buffers are tristated when the device enters this mode. Since the core of the
device is turned off, the states of the registers are lost. The device must be re-initialized when returning
to normal operating mode. I/Os can be driven during LP mode. For details, refer to the Design for Low
Power in Microsemi Antifuse FPGAs application note under the section Using the LP Mode Pin on eX
Devices. Clock pins should be driven either HIGH or LOW and should not float; otherwise, they will draw
current and burn power. The device must be re-initialized when exiting LP mode.
1- 6
R ev isio n 1 0
eX Family FPGAs
To exit the LP mode, the LP pin must be driven LOW for over 200 µs to allow for the charge pumps to
power-up and device initialization can begin.
Table 1-3 illustrates the standby current of eX devices in LP mode.
Table 1-3 • Standby Power of eX Devices in LP Mode Typical Conditions, VCCA, VCCI = 2.5 V,
TJ = 25C
Product
Low Power Standby Current
Units
eX64
100
µA
eX128
111
µA
eX256
134
µA
R ev i si o n 1 0
1-7
eX FPGA Architecture and Characteristics
Figure 1-8 to Figure 1-11 on page 1-9 show some sample power characteristics of eX devices.
Notes:
1. Device filled with 16-bit counters.
2. VCCA, VCCI = 2.7 V, device tested at room temperature.
Figure 1-8 •
eX Dynamic Power Consumption – High Frequency
Notes:
1. Device filled with 16-bit counters.
2. VCCA, VCCI = 2.7 V, device tested at room temperature.
Figure 1-9 •
1- 8
eX Dynamic Power Consumption – Low Frequency
R ev isio n 1 0
eX Family FPGAs
Figure 1-10 • Total Dynamic Power (mW)
Figure 1-11 • System Power at 5%, 10%, and 15% Duty Cycle
R ev i si o n 1 0
1-9
eX FPGA Architecture and Characteristics
Boundary Scan Testing (BST)
All eX devices are IEEE 1149.1 compliant. eX devices offer superior diagnostic and testing capabilities by
providing Boundary Scan Testing (BST) and probing capabilities. These functions are controlled through
the special test pins (TMS, TDI, TCK, TDO and TRST). The functionality of each pin is defined by two
available modes: Dedicated and Flexible, and is described in Table 1-4. In the dedicated test mode, TCK,
TDI, and TDO are dedicated pins and cannot be used as regular I/Os. In flexible mode (default mode),
TMS should be set HIGH through a pull-up resistor of 10 k. TMS can be pulled LOW to initiate the test
sequence.
Table 1-4 • Boundary Scan Pin Functionality
Dedicated Test Mode
Flexible Mode
TCK, TDI, TDO are dedicated BST pins
TCK, TDI, TDO are flexible and may be used as I/Os
No need for pull-up resistor for TMS and TDI
Use a pull-up resistor of 10 k on TMS
Dedicated Test Mode
In Dedicated mode, all JTAG pins are reserved for BST; designers cannot use them as regular I/Os. An
internal pull-up resistor is automatically enabled on both TMS and TDI pins, and the TMS pin will function
as defined in the IEEE 1149.1 (JTAG) specification.
To select Dedicated mode, users need to reserve the JTAG pins in Microsemi's Designer software by
checking the Reserve JTAG box in the Device Selection Wizard (Figure 1-12). JTAG pins comply with
LVTTL/TTL I/O specification regardless of whether they are used as a user I/O or a JTAG I/O. Refer to
the "3.3 V LVTTL Electrical Specifications" section and "5.0 V TTL Electrical Specifications" section on
page 1-18 for detailed specifications.
Figure 1-12 • Device Selection Wizard
Flexible Mode
In Flexible Mode, TDI, TCK and TDO may be used as either user I/Os or as JTAG input pins. The internal
resistors on the TMS and TDI pins are disabled in flexible JTAG mode, and an external 10 k pullresistor to VCCI is required on the TMS pin.
To select the Flexible mode, users need to clear the check box for Reserve JTAG in the Device Selection
Wizard in Microsemi's Designer software. The functionality of TDI, TCK, and TDO pins is controlled by
the BST TAP controller. The TAP controller receives two control inputs, TMS and TCK. Upon power-up,
the TAP controller enters the Test-Logic-Reset state. In this state, TDI, TCK, and TDO function as user
I/Os. The TDI, TCK, and TDO pins are transformed from user I/Os into BST pins when the TMS pin is
LOW at the first rising edge of TCK. The TDI, TCK, and TDO pins return to user I/Os when TMS is held
HIGH for at least five TCK cycles.
1- 10
R ev i sio n 1 0
eX Family FPGAs
Table 1-5 describes the different configuration requirements of BST pins and their functionality in different
modes.
Table 1-5 • Boundary-Scan Pin Configurations and Functions
Mode
Designer "Reserve JTAG" Selection
TAP Controller State
Dedicated (JTAG)
Checked
Any
Flexible (User I/O)
Unchecked
Test-Logic-Reset
Flexible (JTAG)
Unchecked
Any EXCEPT Test-Logic-Reset
TRST Pin
The TRST pin functions as a dedicated Boundary-Scan Reset pin when the Reserve JTAG Test Reset
option is selected, as shown in Figure 1-12. An internal pull-up resistor is permanently enabled on the
TRST pin in this mode. It is recommended to connect this pin to GND in normal operation to keep the
JTAG state controller in the Test-Logic-Reset state. When JTAG is being used, it can be left floating or be
driven HIGH.
When the Reserve JTAG Test Reset option is not selected, this pin will function as a regular I/O. If
unused as an I/O in the design, it will be configured as a tristated output.
JTAG Instructions
Table 1-6 lists the supported instructions with the corresponding IR codes for eX devices.
Table 1-6 • JTAG Instruction Code
Instructions (IR4: IR0)
Binary Code
EXTEST
00000
SAMPLE / PRELOAD
00001
INTEST
00010
USERCODE
00011
IDCODE
00100
HIGHZ
01110
CLAMP
01111
Diagnostic
10000
BYPASS
11111
Reserved
All others
Table 1-7 lists the codes returned after executing the IDCODE instruction for eX devices. Note that bit 0
is always “1.” Bits 11-1 are always “02F”, which is Microsemi SoC Products Group's manufacturer code.
Table 1-7 • IDCODE for eX Devices
Device
Revision
Bits 31-28
Bits 27-12
eX64
0
8
40B2, 42B2
eX128
0
9
40B0, 42B0
eX256
0
9
40B5, 42B5
eX64
1
A
40B2, 42B2
eX128
1
B
40B0, 42B0
eX256
1
B
40B5, 42B5
R ev i si o n 1 0
1- 11
eX FPGA Architecture and Characteristics
Programming
Device programming is supported through Silicon Sculptor series of programmers. In particular, Silicon
Sculptor II is a compact, robust, single-site and multi-site device programmer for the PC.
With standalone software, Silicon Sculptor II allows concurrent programming of multiple units from the
same PC, ensuring the fastest programming times possible. Each fuse is subsequently verified by Silicon
Sculptor II to insure correct programming. In addition, integrity tests ensure that no extra fuses are
programmed. Silicon Sculptor II also provides extensive hardware self-testing capability.
The procedure for programming an eX device using Silicon Sculptor II is as follows:
1. Load the *.AFM file
2. Select the device to be programmed
3. Begin programming
When the design is ready to go to production, Microsemi offers device volume-programming services
either through distribution partners or via in-house programming from the factory.
For more details on programming eX devices, please refer to the Programming Antifuse Devices
application note and the Silicon Sculptor II User's Guide.
Probing Capabilities
eX devices provide internal probing capability that is accessed with the JTAG pins. The Silicon Explorer II
Diagnostic hardware is used to control the TDI, TCK, TMS and TDO pins to select the desired nets for
debugging. The user simply assigns the selected internal nets in the Silicon Explorer II software to the
PRA/PRB output pins for observation. Probing functionality is activated when the BST pins are in JTAG
mode and the TRST pin is driven HIGH or left floating. If the TRST pin is held LOW, the TAP controller
will remain in the Test-Logic-Reset state so no probing can be performed. The Silicon Explorer II
automatically places the device into JTAG mode, but the user must drive the TRST pin HIGH or allow the
internal pull-up resistor to pull TRST HIGH.
When you select the Reserve Probe Pin box, as shown in Figure 1-12 on page 1-10, the layout tool
reserves the PRA and PRB pins as dedicated outputs for probing. This reserve option is merely a
guideline. If the Layout tool requires that the PRA and PRB pins be user I/Os to achieve successful
layout, the tool will use these pins for user I/Os. If you assign user I/Os to the PRA and PRB pins and
select the Reserve Probe Pin option, Designer Layout will override the "Reserve Probe Pin" option and
place your user I/Os on those pins.
To allow for probing capabilities, the security fuse must not be programmed. Programming the security
fuse will disable the probe circuitry. Table 1-8 on page 1-13 summarizes the possible device
configurations for probing once the device leaves the Test-Logic-Reset JTAG state.
Silicon Explorer II Probe
Silicon Explorer II is an integrated hardware and software solution that, in conjunction with Microsemi
Designer software tools, allow users to examine any of the internal nets of the device while it is operating
in a prototype or a production system. The user can probe into an eX device via the PRA and PRB pins
without changing the placement and routing of the design and without using any additional resources.
Silicon Explorer II's noninvasive method does not alter timing or loading effects, thus shortening the
debug cycle.
Silicon Explorer II does not require re-layout or additional MUXes to bring signals out to an external pin,
which is necessary when using programmable logic devices from other suppliers.
Silicon Explorer II samples data at 100 MHz (asynchronous) or 66 MHz (synchronous). Silicon Explorer II
attaches to a PC's standard COM port, turning the PC into a fully functional 18-channel logic analyzer.
Silicon Explorer II allows designers to complete the design verification process at their desks and
reduces verification time from several hours per cycle to a few seconds.
The Silicon Explorer II tool uses the boundary scan ports (TDI, TCK, TMS and TDO) to select the desired
nets for verification. The selected internal nets are assigned to the PRA/PRB pins for observation.
Figure 1-13 on page 1-13 illustrates the interconnection between Silicon Explorer II and the eX device to
perform in-circuit verification.
1- 12
R ev i sio n 1 0
eX Family FPGAs
Design Considerations
The TDI, TCK, TDO, PRA, and PRB pins should not be used as input or bidirectional ports. Since these
pins are active during probing, critical signals input through these pins are not available while probing. In
addition, the Security Fuse should not be programmed because doing so disables the probe circuitry. It is
recommended to use a series 70 termination resistor on every probe connector (TDI, TCK, TMS, TDO,
PRA, PRB). The 70 series termination is used to prevent data transmission corruption during probing
and reading back the checksum.
Table 1-8 • Device Configuration Options for Probe Capability (TRST pin reserved)
JTAG Mode
Dedicated
TRST1
Security Fuse
Programmed
PRA, PRB2
TDI, TCK, TDO2
LOW
No
User I/O3
Probing Unavailable
3
Flexible
LOW
No
User I/O
User I/O3
Dedicated
HIGH
No
Probe Circuit Outputs
Probe Circuit Inputs
Flexible
HIGH
No
Probe Circuit Outputs
Probe Circuit Inputs
–
Yes
Probe Circuit Secured
Probe Circuit Secured
–
Notes:
1. If TRST pin is not reserved, the device behaves according to TRST = HIGH in the table.
2. Avoid using the TDI, TCK, TDO, PRA, and PRB pins as input or bidirectional ports. Since these pins are active during
probing, input signals will not pass through these pins and may cause contention.
3. If no user signal is assigned to these pins, they will behave as unused I/Os in this mode. Unused pins are automatically
tristated by Microsemi Designer software.
16 Pin
Connection
Serial
Connection
TDI
TCK
TMS
TDO
Silicon Explorer II
eX FPGAs
PRA
PRB
22 Pin
Connection
Additional 16 Channels
(Logic Analyzer)
Figure 1-13 • Silicon Explorer II Probe Setup
Development Tool Support
The eX family of FPGAs is fully supported by both Libero® Integrated Design Environment and Designer
FPGA Development software. Libero IDE is a design management environment that streamlines the
design flow. Libero IDE provides an integrated design manager that seamlessly integrates design tools
while guiding the user through the design flow, managing all design and log files, and passing necessary
design data among tools. Additionally, Libero IDE allows users to integrate both schematic and HDL
synthesis into a single flow and verify the entire design in a single environment. Libero IDE includes
Synplify® for Microsemi from Synplicity®, ViewDraw for Microsemi from Mentor Graphics, ModelSim®
HDL Simulator from Mentor Graphics®, WaveFormer Lite™ from SynaptiCAD™, and Designer software
from Microsemi. Refer to the Libero IDE flow (located on Microsemi SoC Product Group’s website)
diagram for more information.
R ev i si o n 1 0
1- 13
eX FPGA Architecture and Characteristics
Designer software is a place-and-route tool and provides a comprehensive suite of backend support
tools for FPGA development. The Designer software includes timing-driven place-and-route, and a
world-class integrated static timing analyzer and constraints editor. With the Designer software, a user
can lock his/her design pins before layout while minimally impacting the results of place-and-route.
Additionally, the back-annotation flow is compatible with all the major simulators and the simulation
results can be cross-probed with Silicon Explorer II, Microsemi integrated verification and logic analysis
tool. Another tool included in the Designer software is the SmartGen core generator, which easily creates
popular and commonly used logic functions for implementation into your schematic or HDL design.
Microsemi's Designer software is compatible with the most popular FPGA design entry and verification
tools from companies such as Mentor Graphics, Synplicity, Synopsys, and Cadence Design Systems.
The Designer software is available for both the Windows and UNIX operating systems.
1- 14
R ev i sio n 1 0
eX Family FPGAs
Related Documents
Datasheet
eX Automotive Family FPGAs
www.microsemi.com/soc/documents/eX_Auto_DS.pdf
Application Notes
Maximizing Logic Utilization in eX, SX and SX-A FPGA Devices Using CC Macros
www.microsemi.com/soc/documents/CC_Macro_AN.pdf
Implementation of Security in Microsemi Antifuse FPGAs
www.microsemi.com/soc/documents/Antifuse_Security_AN.pdf
Microsemi eX, SX-A, and RT54SX-S I/Os
www.microsemi.com/soc/documents/antifuseIO_AN.pdf
Microsemi SX-A and RT54SX-S Devices in Hot-Swap and Cold-Sparing Applications
www.microsemi.com/soc/documents/HotSwapColdSparing_AN.pdf
Design For Low Power in Microsemi Antifuse FPGAs
www.microsemi.com/soc/documents/Low_Power_AN.pdf
Programming Antifuse Devices
www.microsemi.com/soc/documents/AntifuseProgram_AN.pdf
User Guides
Silicon Sculptor II User's Guide
www.microsemi.com/soc/documents/SiliSculptII_Sculpt3_ug.pdf
Miscellaneous
Libero IDE flow
www.microsemi.com/soc/products/tools/libero/flow.html
R ev i si o n 1 0
1- 15
eX FPGA Architecture and Characteristics
2.5 V / 3.3 V /5.0 V Operating Conditions
Table 1-9 • Absolute Maximum Ratings*
Symbol
Parameter
Limits
Units
VCCI
DC Supply Voltage for I/Os
–0.3 to +6.0
V
VCCA
DC Supply Voltage for Array
–0.3 to +3.0
V
VI
Input Voltage
–0.5 to +5.75
V
VO
Output Voltage
–0.5 to +VCCI
V
TSTG
Storage Temperature
–65 to +150
°C
Note: *Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability. Devices
should not be operated outside the Recommended Operating Conditions.
Table 1-10 • Recommended Operating Conditions
Parameter
Commercial
Industrial
Units
Temperature Range*
0 to +70
–40 to +85
C
2.5V Power Supply Range (VCCA, VCCI)
2.3 to 2.7
2.3 to 2.7
V
3.3V Power Supply Range (VCCI)
3.0 to 3.6
3.0 to 3.6
V
5.0V Power Supply Range (VCCI)
4.75 to 5.25
4.75 to 5.25
V
Note: *Ambient temperature (TA).
Table 1-11 • Typical eX Standby Current at 25°C
VCCA= 2.5 V
VCCI = 2.5 V
VCCA = 2.5 V
VCCI = 3.3 V
VCCA = 2.5 V
VCCI = 5.0 V
eX64
397 µA
497 µA
700 µA
eX128
696 µA
795 µA
1,000 µA
eX256
698 µA
796 µA
2,000 µA
Product
1- 16
R ev i sio n 1 0
eX Family FPGAs
2.5 V LVCMOS2 Electrical Specifications
Commercial
Symbol
VOH
VOL
Parameter
Min.
Max.
Industrial
Min.
Max.
Units
VCCI = MIN, VI = VIH or VIL
(IOH = –100 mA)
2.1
2.1
V
VCCI = MIN, VI = VIH or VIL
(IOH = –1 mA)
2.0
2.0
V
VCCI = MIN, VI = VIH or VIL
(IOH = –2 mA)
1.7
1.7
V
VCCI = MIN, VI = VIH or VIL
(IOL = 100 mA)
0.2
0.2
V
VCCI = MIN, VI = VIH or VIL
(IOL = 1mA)
0.4
0.4
V
VCCI = MIN,VI = VIH or VIL
(IOL = 2 mA)
0.7
0.7
V
VIL
Input Low Voltage, VOUT VOL (max.)
–0.3
0.7
-0.3
0.7
V
VIH
Input High Voltage, VOUT VOH (min.)
1.7
VCCI + 0.3
1.7
VCCI + 0.3
V
IIL/ IIH
Input Leakage Current, VIN = VCCI or
GND
–10
10
–10
10
µA
IOZ
3-State Output Leakage
VOUT = VCCI or GND
–10
10
–10
10
µA
tR, tF1,2
Input Transition Time
10
10
ns
CIO
I/O Capacitance
10
10
pF
Standby Current
1.0
3.0
mA
3,4
ICC
Current,
IV Curve Can be derived from the IBIS model at www.microsemi.com/soc/custsup/models/ibis.html.
Notes:
1.
2.
3.
4.
tR is the transition time from 0.7 V to 1.7 V.
tF is the transition time from 1.7 V to 0.7 V.
ICC max Commercial –F = 5.0 mA
ICC = ICCI + ICCA
R ev i si o n 1 0
1- 17
eX FPGA Architecture and Characteristics
3.3 V LVTTL Electrical Specifications
Commercial
Symbol Parameter
Min.
Max.
VOH
VCCI = MIN, VI = VIH or VIL
(IOH = –8 mA)
2.4
VOL
VCCI = MIN, VI = VIH or VIL
(IOL = 12 mA)
VIL
Input Low Voltage
VIH
Input High Voltage
2.0
VCCI +0.5
IIL/ IIH
Input Leakage Current, VIN = VCCI or
GND
–10
IOZ
3-State
Output
Leakage
VOUT = VCCI or GND
–10
tR, tF1,2
Input Transition Time
CIO
ICC3,4
Industrial
Min.
Max.
2.4
Units
V
0.4
0.4
V
0.8
0.8
V
2.0
VCCI +0.5
V
10
–10
10
µA
10
–10
10
µA
10
10
ns
I/O Capacitance
10
10
pF
Standby Current
1.5
10
mA
Current,
IV Curve Can be derived from the IBIS model at www.microsemi.com/soc/custsup/models/ibis.html.
Notes:
1.
2.
3.
4.
5.
tR is the transition time from 0.8 V to 2.0 V.
tF is the transition time from 2.0 V to 0.8 V.
ICC max Commercial –F = 5.0 mA
ICC = ICCI + ICCA
JTAG pins comply with LVTTL/TTL I/O specification regardless of whether they are used as a user I/O or a JTAG I/O.
5.0 V TTL Electrical Specifications
Commercial
Symbol
Parameter
Min.
VOH
VCCI = MIN, VI = VIH or VIL
(IOH = –8 mA)
VOL
VCCI = MIN, VI = VIH or VIL
(IOL= 12 mA)
VIL
Input Low Voltage
Max.
2.4
Industrial
Min.
Max.
2.4
Units
V
0.4
0.4
V
0.8
0.8
V
VIH
Input High Voltage
2.0
VCCI +0.5
2.0
VCCI +0.5
V
IIL/ IIH
Input Leakage Current, VIN = VCCI or GND
–10
10
–10
10
µA
IOZ
3-State Output Leakage Current,
VOUT = VCCI or GND
–10
10
–10
10
µA
tR, tF1,2
Input Transition Time
10
10
ns
CIO
I/O Capacitance
10
10
pF
ICC3,4
Standby Current
15
20
mA
IV Curve Can be derived from the IBIS model at www.microsemi.com/soc/custsup/models/ibis.html.
Note:
1.
2.
3.
4.
5.
tR is the transition time from 0.8 V to 2.0 V.
tF is the transition time from 2.0 V to 0.8 V.
ICC max Commercial –F=20mA
ICC = ICCI + ICCA
JTAG pins comply with LVTTL/TTL I/O specification regardless of whether they are used as a user I/O or a JTAG I/O.
1- 18
R ev i sio n 1 0
eX Family FPGAs
Power Dissipation
Power consumption for eX devices can be divided into two components: static and dynamic.
Static Power Component
The power due to standby current is typically a small component of the overall power. Typical standby
current for eX devices is listed in the Table 1-11 on page 1-16. For example, the typical static power for
eX128 at 3.3 V VCCI is:
ICC * VCCA = 795 µA x 2.5 V = 1.99 mW
Dynamic Power Component
Power dissipation in CMOS devices is usually dominated by the dynamic power dissipation. This
component is frequency-dependent and a function of the logic and the external I/O. Dynamic power
dissipation results from charging internal chip capacitance due to PC board traces and load device
inputs. An additional component of the dynamic power dissipation is the totem pole current in the CMOS
transistor pairs. The net effect can be associated with an equivalent capacitance that can be combined
with frequency and voltage to represent dynamic power dissipation.
Dynamic power dissipation = CEQ * VCCA2 x F
where:
CEQ = Equivalent capacitance
F
= switching frequency
Equivalent capacitance is calculated by measuring ICCA at a specified frequency and voltage for each
circuit component of interest. Measurements have been made over a range of frequencies at a fixed
value of VCC. Equivalent capacitance is frequency-independent, so the results can be used over a wide
range of operating conditions. Equivalent capacitance values are shown below.
CEQ Values for eX Devices
Combinatorial modules (Ceqcm)
Sequential modules (Ceqsm)
Input buffers (Ceqi)
Output buffers (Ceqo)
Routed array clocks (Ceqcr)
1.70 pF
1.70 pF
1.30 pF
7.40 pF
1.05 pF
The variable and fixed capacitance of other device components must also be taken into account when
estimating the dynamic power dissipation.
Table 1-12 shows the capacitance of the clock components of eX devices.
Table 1-12 • Capacitance of Clock Components of eX Devices
eX64
eX128
eX256
Dedicated array clock – variable (Ceqhv)
0.85 pF
0.85 pF
0.85 pF
Dedicated array clock – fixed (Ceqhf)
18.00 pF
20.00 pF
25.00 pF
Routed array clock A (r1)
23.00 pF
28.00 pF
35.00 pF
Routed array clock B (r2)
23.00 pF
28.00 pF
35.00 pF
R ev i si o n 1 0
1- 19
eX FPGA Architecture and Characteristics
The estimation of the dynamic power dissipation is a piece-wise linear summation of the power
dissipation of each component.
Dynamic power dissipation = VCCA2 * [(mc * Ceqcm * fmC)Comb Modules + (ms * Ceqsm * fmS)Seq Modules
+ (n * Ceqi * fn)Input Buffers + (0.5 * (q1 * Ceqcr * fq1) + (r1 * fq1))RCLKA + (0.5 * (q2 * Ceqcr * fq2)
+ (r2 * fq2))RCLKB + (0.5 * (s1 * Ceqhv * fs1)+(Ceqhf * fs1))HCLK] + VCCI2 * [(p * (Ceqo + CL)
* fp)Output Buffers]
where:
mc
= Number of combinatorial cells switching at frequency fm, typically 20% of C-cells
ms
= Number of sequential cells switching at frequency fm, typically 20% of R-cells
n
= Number of input buffers switching at frequency fn, typically number of inputs / 4
p
= Number of output buffers switching at frequency fp, typically number of outputs / 4
q1
= Number of R-cells driven by routed array clock A
q2
= Number of R-cells driven by routed array clock B
r1
= Fixed capacitance due to routed array clock A
r2
= Fixed capacitance due to routed array clock B
s1
= Number of R-cells driven by dedicated array clock
Ceqcm = Equivalent capacitance of combinatorial modules
Ceqsm = Equivalent capacitance of sequential modules
Ceqi
= Equivalent capacitance of input buffers
Ceqcr
= Equivalent capacitance of routed array clocks
Ceqhv = Variable capacitance of dedicated array clock
Ceqhf
= Fixed capacitance of dedicated array clock
Ceqo
= Equivalent capacitance of output buffers
CL
= Average output loading capacitance, typically 10 pF
fmc
= Average C-cell switching frequency, typically F/10
fms
= Average R-cell switching frequency, typically F/10
fn
= Average input buffer switching frequency, typically F/5
fp
= Average output buffer switching frequency, typically F/5
fq1
= Frequency of routed clock A
fq2
= Frequency of routed clock B
fs1
= Frequency of dedicated array clock
The eX, SX-A and RTSX-S Power Calculator can be used to estimate the total power dissipation (static
and dynamic) of eX devices: www.microsemi.com/soc/techdocs/calculators.aspx.
1- 20
R ev i sio n 1 0
eX Family FPGAs
Thermal Characteristics
The temperature variable in the Designer software refers to the junction temperature, not the ambient
temperature. This is an important distinction because the heat generated from dynamic power
consumption is usually hotter than the ambient temperature. EQ 1, shown below, can be used to
calculate junction temperature.
EQ 1
Junction Temperature = T + Ta(1)
Where:
Ta = Ambient Temperature
T = Temperature gradient between junction (silicon) and ambient = ja * P
P = Power
ja = Junction to ambient of package. ja numbers are located in the "Package Thermal Characteristics"
section below.
Package Thermal Characteristics
The device junction-to-case thermal characteristic is jc, and the junction-to-ambient air characteristic is
ja. The thermal characteristics for ja are shown with two different air flow rates. jc is provided for reference.
The maximum junction temperature is 150C.
The maximum power dissipation allowed for eX devices is a function of ja. A sample calculation of the
absolute maximum power dissipation allowed for a TQFP 100-pin package at commercial temperature
and still air is as follows:
Max. junction temp. (C) – Max. ambient temp. (C) 150C – 70C
Maximum Power Allowed = ------------------------------------------------------------------------------------------------------------------------------------------ = ------------------------------------- = 2.39W
ja (C/W)
33.5C/W
ja
Pin Count
jc
Still Air
1.0 m/s
200 ft/min
2.5 m/s
500 ft/min
Units
Thin Quad Flat Pack (TQFP)
64
12.0
42.4
36.3
34.0
C/W
Thin Quad Flat Pack (TQFP)
100
14.0
33.5
27.4
25.0
C/W
Package Type
R ev i si o n 1 0
1- 21
eX FPGA Architecture and Characteristics
eX Timing Model
Input Delays
I/O Module
t INYH = 0.7 ns
Internal Delays
Combinatorial
Cell
t IRD1 = 0.3 ns
t IRD2 = 0.4 ns
t PD = 0.7 ns
Predicted
Routing
Delays
Output Delays
I/O Module
t DHL = 2.6 ns
t RD1 = 0.3 ns
t RD4 = 0.7 ns
t RD8 = 1.2 ns
I/O Module
Register
Cell
t ENZL= 1.9 ns
t SUD = 0.5 ns
t HD = 0.0 ns
Routed
Clock
t RCKH = 1.3 ns
t RD1 = 0.3 ns
t DHL = 2.6 ns
I/O Module
Register
Cell
t ENZL= 1.9 ns
t IRD1 = 0.3 ns
t SUD = 0.5 ns
t HD = 0.0 ns
Hard-Wired
Clock
Q
t RCO= 0.6 ns
(100% Load)
I/O Module
t INYH = 1.3 ns
D
t HCKH = 1.1 ns
D
Q
t RD1 = 0.3 ns
t DHL = 2.6 ns
t RCO= 0.6 ns
Note: Values shown for eX128–P, worst-case commercial conditions (5.0 V, 35 pF Pad Load).
Figure 1-14 • eX Timing Model
Hardwired Clock
External Setup = tINYH + tIRD1 + tSUD – tHCKH
= 0.7 + 0.3 + 0.5 – 1.1 = 0.4 ns
Clock-to-Out (Pad-to-Pad), typical
= tHCKH + tRCO + tRD1 + tDHL
= 1.1 + 0.6 + 0.3 + 2.6 = 4.6 ns
Routed Clock
External Setup = tINYH + tIRD2 + tSUD – tRCKH
= 0.7 + 0.4 + 0.5 – 1.3= 0.3 ns
Clock-to-Out (Pad-to-Pad), typical
= tRCKH + tRCO + tRD1 + tDHL
= 1.3+ 0.6 + 0.3 + 2.6 = 4.8 ns
1- 22
R ev i sio n 1 0
eX Family FPGAs
Output Buffer Delays
E
D
VCC
50%
50%
In
Out
VOL
GND
VOH
1.5 V
tDLH
1.5 V
tDHL
En
Out
TRIBUFF
PAD To AC Test Loads (shown below)
VCC
50% 50%
GND
VCC
1.5 V
10%
VOL
tENZL
tENLZ
VCC
En
50%
Out
GND
50%
GND
VOH
1.5 V
90%
tENHZ
tENZH
Table 1-13 • Output Buffer Delays
AC Test Loads
Load 1
(used to measure
propagation delay)
Load 2
(Used to measure enable delays)
VCC
To the output
under test
35 pF
To the output
under test
GND
R to VCC for tPZL
R to GND for tPHZ
R = 1 k
35 pF
Load 3
(Used to measure disable delays)
VCC
To the output
under test
GND
R to VCC for tPLZ
R to GND for tPHZ
R = 1 k
5 pF
Figure 1-15 • AC Test Loads
R ev i si o n 1 0
1- 23
eX FPGA Architecture and Characteristics
Input Buffer Delays
PAD
Y
INBUF
3 V
In
1.5 V
0V
1.5 V
VCC
Out
GND
50%
50%
t
t
INY
INY
Table 1-14 • Input Buffer Delays
C-Cell Delays
S
A
Y
B
S, A or B
VCC
50% 50%
GND
VCC
50%
Out
GND
tPD
50%
tPD
Out
VCC
50%
tPD
GND
tPD
Table 1-15 • C-Cell Delays
1- 24
R ev i sio n 1 0
50%
eX Family FPGAs
Cell Timing Characteristics
D
CLK
PRESET
Q
CLR
(Positive edge triggered)
t HD
D
t
CLK
SUD
t HP
t HPWH,
t RPWH
t RCO
tHPWL, tRPWL
Q
t CLR
t PRESET
CLR
t WASYN
PRESET
Figure 1-16 • Flip-Flops
R ev i si o n 1 0
1- 25
eX FPGA Architecture and Characteristics
Timing Characteristics
Timing characteristics for eX devices fall into three categories: family-dependent, device-dependent, and
design-dependent. The input and output buffer characteristics are common to all eX family members.
Internal routing delays are device-dependent. Design dependency means actual delays are not
determined until after placement and routing of the user’s design are complete. Delay values may then
be determined by using the Timer utility or performing simulation with post-layout delays.
Critical Nets and Typical Nets
Propagation delays are expressed only for typical nets, which are used for initial design performance
evaluation. Critical net delays can then be applied to the most timing critical paths. Critical nets are
determined by net property assignment prior to placement and routing. Up to six percent of the nets in a
design may be designated as critical.
Long Tracks
Some nets in the design use long tracks. Long tracks are special routing resources that span multiple
rows, columns, or modules. Long tracks employ three to five antifuse connections. This increases
capacitance and resistance, resulting in longer net delays for macros connected to long tracks. Typically,
no more than six percent of nets in a fully utilized device require long tracks. Long tracks contribute
approximately 4 ns to 8.4 ns delay. This additional delay is represented statistically in higher fanout
routing delays.
Timing Derating
eX devices are manufactured with a CMOS process. Therefore, device performance varies according to
temperature, voltage, and process changes. Minimum timing parameters reflect maximum operating
voltage, minimum operating temperature, and best-case processing. Maximum timing parameters reflect
minimum operating voltage, maximum operating temperature, and worst-case processing.
Temperature and Voltage Derating Factors
Table 1-16 • Temperature and Voltage Derating Factors
(Normalized to Worst-Case Commercial, TJ = 70C, VCCA = 2.3V)
Junction Temperature (TJ)
1- 26
VCCA
–55
–40
0
25
70
85
125
2.3
0.79
0.80
0.87
0.88
1.00
1.04
1.13
2.5
0.74
0.74
0.81
0.83
0.93
0.97
1.06
2.7
0.69
0.70
0.76
0.78
0.88
0.91
1.00
R ev i sio n 1 0
eX Family FPGAs
eX Family Timing Characteristics
Table 1-17 • eX Family Timing Characteristics
(Worst-Case Commercial Conditions, VCCA = 2.3 V, TJ = 70C)
–P Speed
Parameter
Description
Min.
Max.
Std Speed
Min.
Max.
–F Speed
Min.
Max.
Units
1
C-Cell Propagation Delays
tPD
Internal Array Module
Predicted Routing
0.7
1.0
1.4
ns
Delays2
tDC
FO=1 Routing Delay, DirectConnect
0.1
0.1
0.2
ns
tFC
FO=1 Routing Delay, FastConnect
0.3
0.5
0.7
ns
tRD1
FO=1 Routing Delay
0.3
0.5
0.7
ns
tRD2
FO=2 Routing Delay
0.4
0.6
0.8
ns
tRD3
FO=3 Routing Delay
0.5
0.8
1.1
ns
tRD4
FO=4 Routing Delay
0.7
1.0
1.3
ns
tRD8
FO=8 Routing Delay
1.2
1.7
2.4
ns
tRD12
FO=12 Routing Delay
1.7
2.5
3.5
ns
tRCO
Sequential Clock-to-Q
0.6
0.9
1.3
ns
tCLR
Asynchronous Clear-to-Q
0.6
0.8
1.2
ns
tPRESET
Asynchronous Preset-to-Q
tSUD
Flip-Flop Data Input Set-Up
tHD
Flip-Flop Data Input Hold
0.0
0.0
0.0
ns
tWASYN
Asynchronous Pulse Width
1.3
1.9
2.6
ns
tRECASYN
Asynchronous Recovery Time
0.3
0.5
0.7
ns
tHASYN
Asynchronous Hold Time
0.3
0.5
0.7
ns
R-Cell Timing
0.7
0.5
0.9
0.7
1.3
1.0
ns
ns
2.5 V Input Module Propagation Delays
tINYH
Input Data Pad-to-Y HIGH
0.6
0.9
1.3
ns
tINYL
Input Data Pad-to-Y LOW
0.8
1.1
1.5
ns
3.3 V Input Module Propagation Delays
tINYH
Input Data Pad-to-Y HIGH
0.7
1.0
1.4
ns
tINYL
Input Data Pad-to-Y LOW
0.9
1.3
1.8
ns
5.0 V Input Module Propagation Delays
tINYH
Input Data Pad-to-Y HIGH
0.7
1.0
1.4
ns
tINYL
Input Data Pad-to-Y LOW
0.9
1.3
1.8
ns
Input Module Predicted Routing Delays2
tIRD1
FO=1 Routing Delay
0.3
0.4
0.5
ns
tIRD2
FO=2 Routing Delay
0.4
0.6
0.8
ns
tIRD3
FO=3 Routing Delay
0.5
0.8
1.1
ns
tIRD4
FO=4 Routing Delay
0.7
1.0
1.3
ns
tIRD8
FO=8 Routing Delay
1.2
1.7
2.4
ns
tIRD12
FO=12 Routing Delay
1.7
2.5
3.5
ns
Notes:
1. For dual-module macros, use tPD + tRD1 + tPDn, tRCO + tRD1 + tPDn or tPD1 + tRD1 + tSUD, whichever is appropriate.
2. Routing delays are for typical designs across worst-case operating conditions. These parameters should be used for
estimating device performance. Post-route timing analysis or simulation is required to determine actual worst-case
performance.
R ev i si o n 1 0
1- 27
eX FPGA Architecture and Characteristics
Table 1-18 • eX Family Timing Characteristics
(Worst-Case Commercial Conditions VCCA = 2.3 V, VCCI = 4.75 V, TJ = 70°C)
–P Speed
Parameter
Description
Min.
Max.
Std Speed
Min.
Max.
–F Speed
Min.
Max.
Units
Dedicated (Hard-Wired) Array Clock Networks
tHCKH
Input LOW to HIGH
(Pad to R-Cell Input)
1.1
1.6
2.3
ns
tHCKL
Input HIGH to LOW
(Pad to R-Cell Input)
1.1
1.6
2.3
ns
tHPWH
Minimum Pulse Width HIGH
1.4
2.0
2.8
ns
tHPWL
Minimum Pulse Width LOW
1.4
2.0
2.8
ns
tHCKSW
Maximum Skew
tHP
Minimum Period
fHMAX
Maximum Frequency
工商网监
湘ICP备2023018690号
