HV7360/HV7361
High-Speed ±100V 2.5A Two-or-Three-Level Ultrasound Pulsers
Features
General Description
•
•
•
•
•
•
•
The HV7360/HV7361 are high-voltage and high-speed
pulse generators with built-in, fast return-to-zero
damping Field-Effect Transistors (FETs). An added
feature to HV7361 is an integrated two-terminal
low-noise T/R switch. These integrated circuits are
designed not only for portable medical ultrasound
image devices but also for NDT and test equipment
applications.
High-Density Integration AC-coupled Pulser
0V to ±100V Output Voltage
±2.5A Source and Sink Minimum Pulse Current
Up to 35 MHz Operating Frequency
2 ns Matched Delay Times
2.5V, 3.3V or 5V CMOS Logic Interface
Built-in Two-terminal Low-noise Interface for
HV7361
• Low Power Consumption and No Floating Power
Supply Rails or Decoupling Capacitors
Applications
•
•
•
•
Medical Ultrasound Imaging
Piezoelectric Transducer Drivers
Ultrasound Industrial NDT
Pulse Waveform Generator
Both the HV7360/HV7361 are composed of controller
logic interface circuits, level translators and
AC-coupled Metal Oxide Semiconductor Field-Effect
Transistor (MOSFET) gate drivers. They also have
high-voltage and high-current P-channel and
N-channel MOSFETs as output stages.
The peak output currents of each channel are
guaranteed to be over ±2.5A with up to ±100V of pulse
swing. The AC coupling topology for the gate drivers
not only saves two floating voltage supplies but also
makes the PCB layout easier.
Package Type
22-lead CABGA
(Top view)
See Table 2-1 for pad information.
2017 Microchip Technology Inc.
DS20005570C-page 1
HV7360/HV7361
HV7360 Typical Application Circuit
+10V
+10V
VDD
VH
0 to +100V
VL3
SP1
+2.5/3.3V VLL
PE
DP1
HVOUT
DN1
INA
0 to -100V
INB
2.5/3.3V
Logic Input
SN1
SP2
INC
DP2
IND
DN2
GND
VSS
VL1
SN2
VL2
+/-100V 2.5A Three-level RTZ Transmit Pulsers
HV7361 Typical Application Circuit
+10V
+10V
0 to +100V
VDD
VH
SP1
VL3
+2.5/3.3V VLL
PE
DP1
DN1
INA
0 to -100V
INB
2.5/3.3V
Logic Input
SN1
INC
SP2
IND
DP2
DN2
SN2
GND VSS VL1 VL2
RX
T/R SW
XDCR
to Rx LNA
+/-100V 2.5A Three-level RTZ Transmit Pulsers with T/R Switch
DS20005570C-page 2
2017 Microchip Technology Inc.
HV7360/HV7361
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Chip Power Supply Voltage, VDD–VSS .................................................................................................... –0.5 to +12.5V
Output High Supply Voltage, VH ......................................................................................................VL–0.5 to VDD+0.5V
Output Low Supply Voltage, VL ..................................................................................................... VSS–0.5V to VH+0.5V
Low-side Supply Voltage, VSS..................................................................................................................... –6V to +0.5V
Differential High Voltage, VSP1–VSN1, VSP2–VSN2 ............................................................................................... +220V
Positive High Voltage, VSP1,2 ................................................................................................................. –0.5V to +110V
Negative High Voltage, VSN1,2 ............................................................................................................... +0.5V to –110V
All Logic Input Voltages.............................................................................................................VSS–0.5V to GND +5.5V
Rx to XDCR Differential Drop ............................................................................................................................... ±140V
Coupling Capacitor Breakdown Voltage................................................................................................................ ±110V
Maximum Junction Temperature, TJ ......................................................................................................................125°C
Operating Ambient Temperature, TA ......................................................................................................–40°C to +85°C
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at those or any other conditions above those
indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
OPERATING SUPPLY VOLTAGES AND CURRENT
Electrical Specifications: GND = 0V, VH = VDD = +10V, VL = VSS = 0V, VPE = 3.3V, VPP = +100V, VNN = –100V,
TA = 25°C unless otherwise specified.
Parameter
Logic Supply Voltage Range
Supply Voltage
Sym.
Min.
Typ.
Max.
Unit
VLL
2.25
—
3.63
V
VDD-VSS
4.75
—
11.5
V
Low Side Supply Voltage
VSS
–5.5
—
0
V
Gate Drive High-side Voltage
VH
VSS+4
—
VDD
V
Gate Drive Low-side Voltage
VL
VSS
—
VDD–4
V
Output Positive High Voltage
VSP1,2
0
—
100
V
Output Negative High Voltage
VSN1,2
–100
—
0
V
VDD Quiescent Current
IDDQ
—
50
—
μA
VH Quiescent Current
IHQ
—
2
—
μA
VDD Quiescent Current
IDDQ
—
1
—
mA
VH Quiescent Current
IHQ
—
2
—
μA
VDD Average Current
IDD
—
4
—
mA
VH Average Current
IH
—
10
—
mA
Input Logic Voltage High
VIH
VPE–0.3
—
VPE
V
Input Logic Voltage Low
VIL
0
—
0.3
V
Input Logic Current High
IIH
—
—
1
μA
μA
Input Logic Current Low
IIL
—
—
1
PE Input Logic Voltage High
VPEH
1.7
3.3
5.25
V
PE Input Logic Voltage Low
VPEL
0
—
0.3
V
PE Input Impedance to GND
RINPE
100
—
—
kΩ
2017 Microchip Technology Inc.
Conditions
4V ≤ VDD ≤ 11.5V
VH–VL ≥ 4V
No input transitions, PE = 0
No input transitions, PE = 1
One channel on at 5 MHz, no
load
For logic inputs INA, INB, INC
and IND
For logic input PE
DS20005570C-page 3
HV7360/HV7361
AC ELECTRICAL CHARACTERISTICS
Electrical Specifications: GND = 0V, VH = VDD = +10V, VL = VSS = 0V, VPE = 3.3V, VPP = +100V, VNN = –100V,
TA = 25°C unless otherwise specified.
Parameter
Sym.
Min.
Typ.
Max.
Unit
Input or PE Rise and Fall Time
Input to Output Delay
Output Rise and Fall Time
Rise and Fall Time Matching
Propagation Matching
Propagation Delay Matching
PE On-time
tirf
td1–4
tr/f1–2
∆trf
∆tdC2C
∆tdD2D
tPE–ON
—
—
—
—
—
—
—
—
7.5
9.5
2
1
±2
—
10
—
—
—
—
—
5
ns
ns
ns
Logic input edge speed requirement
RLOAD = 1Ω
CLOAD = 330 pF, RLOAD = 2.5 kΩ
ns
Channel to channel
ns
PE Off-time
tPE–OFF
—
—
4
COG
CVH
—
—
10
0.22
—
—
Device to device delay match
VPE = 1.7 ~ 5.25V,
VDD = 7.5 ~ 11.5V,
–20 ~ 85°C
100V X7S
16V X7R
Output to MOSFET Gate Cap
VH to VL3 Decoupling Cap
µs
nF
µF
Conditions
ELECTRICAL CHARACTERISTICS
Electrical Specifications: GND = 0V, VH = VDD = +10V, VL = VSS = 0V, VPE = 3.3V, VPP = +100V, VNN = –100V,
TA = 25°C unless otherwise specified.
Parameter
Sym.
Min.
Typ.
Max.
Unit
Conditions
PULSER AND DAMPING P-CHANNEL MOSFET
DC PARAMETER
Drain-to-source Breakdown Voltage
Gate Threshold Voltage
Change in VGS(th) with Temperature
Gate-to-source Shunt Resistor
Gate-to-source Zener Voltage
Zero-gate Voltage Drain Current
ON-state Drain Current
Static Drain-to-source ON-state
Resistance
BVDSS
VGS(th)
∆VGS(th)
RGS
VZGS
–200
–1
—
10
13.2
—
—
—
—
—
—
–2.4
4.5
50
25
V
V
mV/°C
kΩ
V
—
—
–10
μA
—
—
–1
mA
–1.2
–2.3
—
—
—
—
–2.5
—
—
—
—
—
8.5
7
1
IDSS
ID(ON)
RDS(ON)
A
Ω
∆RDS(ON)
%/°C
Change in RDS(ON) with Temperature
AC PARAMETER
400
—
—
mmho
Forward Transconductance
GFS
—
75
—
Input Capacitance
CISS
Common Source Output Capacitance
COSS
—
21
—
pF
—
6.5
—
Reverse Transfer Capacitance
CRSS
DIODE PARAMETER
—
—
1.8
V
Diode Forward Voltage Drop
VSBD
Reverse Recovery Time of Body Diode
trrBD
—
300
—
ns
PULSER AND DAMPING N-CHANNEL MOSFET
DC PARAMETER
200
—
—
V
Drain-to-source Breakdown Voltage
BVDSS
Gate Threshold Voltage
VGS(th)
1
—
2.4
V
DS20005570C-page 4
VGS = 0V, ID = –2 mA
VGS = VDS, ID = –1 mA
VGS = VDS, ID = –1 mA
IGS = 100 µA, if applied
IGS = –2 mA, if applied
VDS = Maximum rating,
VGS = 0V
VDS = 0.8 maximum rating,
VGS = 0V, TA = 125°C
VGS = –5V, VDS = –25V
VGS = –10V, VDS = –50V
VGS = –5V, ID = –150 mA
VGS = –10V, ID = –1A
VGS = –10V, ID = –1 mA
VDS = –25V, ID = –500 mA
VGS = 0V,
VDS = –25V,
f = 1 MHz
VGS = 0V, ISD = 500 mA
VGS = 0V, ID = 2 mA
VGS = VDS, ID = 1 mA
2017 Microchip Technology Inc.
HV7360/HV7361
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: GND = 0V, VH = VDD = +10V, VL = VSS = 0V, VPE = 3.3V, VPP = +100V, VNN = –100V,
TA = 25°C unless otherwise specified.
Parameter
Change in VGS(th) with Temperature
Gate-to-source Shunt Resistor
Gate-to-source Zener Voltage
Zero Gate Voltage Drain Current
ON-state Drain Current
Static Drain-to-source ON-state
Resistance
Change in RDS(ON) with Temperature
AC PARAMETER
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
DIODE PARAMETER
Diode Forward Voltage Drop
Reverse Recovery Time of Body Diode
Sym.
Min.
Typ.
Max.
∆VGS(th)
RGS
VZGS
—
10
13.2
—
—
—
–4.5
50
25
—
—
10
—
—
1
∆RDS(ON)
1.3
2.3
—
—
—
—
2.5
—
—
—
—
—
6.5
6
1
GFS
CISS
COSS
CRSS
400
—
—
—
—
56
13
2
—
—
—
—
VSBD
trrBD
—
—
—
300
1.8
—
V
ns
IDSS
ID(ON)
RDS(ON)
Unit
Conditions
mV/°C VGS = VDS, ID = 1 mA
kΩ
IGS = 100 µA
V
IGS = 2 mA
VDS = Maximum rating,
μA
VGS = 0V
VDS = 0.8 maximum rating,
mA
VGS = 0V, TA = 125°C
VGS = 5V, VDS = 25V
A
VGS = 10V, VDS = 50V
VGS = 5V, ID = 150 mA
Ω
VGS = 10V, ID = 1A
%/°C VGS = 10V, ID = 1A
mmho VDS = 25V, ID = 500 mA
pF
VGS = 0V,
VDS = 25V,
f = 1 MHz
VGS = 0V, ISD = 500 mA
HV7361 T/R SWITCH CHARACTERISTICS
Parameter
Breakdown Voltage from XDCR to Rx
Sym.
Min.
Typ.
Max.
Unit
—
V
IA–B = ±1 mA
IA–B = ±5 mA
BVA–B
±130
—
Switch-on Resistance from XDCR to Rx
RSW
—
15
—
Ω
VA–B Trip Point to Turn Off
VTRIP
—
±1
±2
V
Switch Turn-off Voltage
Conditions
VOFF
—
±2
—
V
IA–B = ±1 mA
IA–B(OFF)
—
±200
±300
µA
VA–B = ±130V
Peak Switching Current
IPEAK
—
±60
—
mA
Turn-off Time
TOFF
—
—
20
ns
Turn-on Time
TON
—
—
20
ns
Switch-on Capacitance from A to B or
B to A
CSW(ON)
—
21
—
pF
SW = On
Switch-off Capacitance from A to B or
B to A
CSW(OFF)
—
15
—
pF
VSW = 25V
BW
—
100
—
MHz
Switch-off Current
Small Signal Bandwidth
2017 Microchip Technology Inc.
RLOAD = 50Ω
DS20005570C-page 5
HV7360/HV7361
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise noted, for all specifications TA = TJ = +25°C.
Parameter
Sym.
Min.
Typ.
Max.
Unit
Conditions
TEMPERATURE RANGE
Maximum Junction Temperature
TJ
—
—
125
°C
Operating Temperature
TA
–40
—
+85
°C
JA
—
106
—
°C/W
PACKAGE THERMAL RESISTANCE
22-Lead CABGA
POWER-UP AND POWER-DOWN SEQUENCE 1
Power-up
Step
1
2
3
4
Note 1:
Power-down
Description
Step
Description
1
PE inactive
VLL
VDD, VH, VSS and VL with signal logic low
2
VPP and VNN off
3
VDD, VH, VSS and VL off
VPP and VNN
PE active
4
VLL off
Powering up or down in any arbitrary sequence will not cause any damage to the device. The power-up
sequence and power-down sequence are only recommended to minimize possible inrush current.
LOGIC CONTROL TABLE
PE
1
0
Input Pulse
Output MOSFETs
INA
INB
INC
IND
1
X
X
X
0
X
X
X
X
X
1
X
X
X
0
X
X
X
X
X
1
X
X
X
0
X
X
X
X
X
1
X
X
X
0
X
DS20005570C-page 6
SP1 to DP1 DN1 to SN1 SP2 to DP2 DN2 to SN2
ON
X
X
X
OFF
X
X
X
OFF
X
ON
X
X
X
OFF
X
X
OFF
X
X
ON
X
X
X
OFF
X
OFF
X
X
X
ON
X
X
X
OFF
OFF
2017 Microchip Technology Inc.
HV7360/HV7361
2.0
PAD DESCRIPTION
Table 2-1 details the description of pads in
HV7360/HV7361. Refer to Package Type for the
location of pads.
TABLE 2-1:
PAD FUNCTION TABLE
Pad
Location
HV7360
Symbol
HV7361
Symbol
A1
GND
GND
Driver and level translator circuit ground return (0V)
A2
IND
IND
Damping N-FET control signal logic input, controlling N-FET2
Description
A3
INC
INC
Damping P-FET control signal logic input, controlling P-FET2
A4
VSS
VSS
Negative voltage power supply (0V)
A6
VDD
VDD
Positive voltage supply (+10V), should connect to an external decoupling cap to
VSS (0V)
A7
INB
INB
Pulsing N-FET control signal logic input, controlling N-FET1
A8
INA
INA
Pulsing P-FET control signal logic input, controlling P-FET1
A9
PE
PE
Drive power enable Hi = On, Low = Off, logic ‘1’ voltage reference input (+2.5V to
+3.3V)
B2
VL2
VL2
Gate-drive negative voltage power supply (0V)
B8
VL1
VL1
Gate-drive negative voltage power supply (0V)
F4
VH
VH
Gate-drive positive voltage power supply (+10V)
F7
VL3
VL3
VH to VL decoupling cap. The trace connecting VL1, VL2, and VL3 (0V) to ground
plane should be as short as possible.
NC
—
No connection for HV7360
—
RX
T/R switch output for HV7361
G4
P1
SP2
SP2
Source of P-FET2, positive high voltage power supply (0V to +100V) or GND
P2
DP2
DP2
Drain of P-FET2, transmit pulser output
P3
DN2
DN2
Drain of N-FET2, transmit pulser output
P4
SN2
SN2
Source of N-FET2, negative high voltage power supply (0V to –100V) or GND
P5
NC
—
—
XDCR
No connection for HV7360
T/R switch input for HV7361
P6
SP1
SP1
Source of P-FET1, positive high voltage power supply (0V to +100V)
P7
DP1
DP1
Drain of P-FET1, transmit pulser output
P8
DN1
DN1
Drain of N-FET1, transmit pulser output
P9
SN1
SN1
Source of N-FET1, negative high voltage power supply (0V to –100V)
2017 Microchip Technology Inc.
DS20005570C-page 7
HV7360/HV7361
3.0
FUNCTIONAL DESCRIPTION
50%
INA
INB
50%
INB
td3
td1
IOUT
INA
td4
td2
50%
0A
TX + DMP
0A
tf2
tr1
50%
90%
IOUT
TX + DMP
10%
tr2
tf1
+10V
+10V
+100V
10%
VDD
VH
SP1
VL3
+2.5/3.3V VLL
90%
PE
DP1
INA
DN1
R1
-100V
INB
2.5/3.3V
Logic Input
SN1
SP2
INC
DP2
IND
DN2
SN2
GND VSS VL1 VL2 RX
FIGURE 3-1:
T/R SW
XDCR
Pulser Timing Test for HV7360/HV7361.
+IPEAK
IA-B
IA-B = +200μA
-130V
-VOFF
+1.0mA
-VTRIP
+VTRIP
+VOFF
VA-B
+130V
+1.0mA
IA-B = -200μA
RSW = 15Ω
-IPEAK
FIGURE 3-2:
DS20005570C-page 8
T/R Switch I-V curve for HV7361.
2017 Microchip Technology Inc.
HV7360/HV7361
+10V
+10V
VDD
VH
0 to +100V
VL3
SP1
+2.5/3.3V VLL
PE
DP1
HVOUT
DN1
INA
0 to -100V
INB
2.5/3.3V
Logic Input
SN1
SP2
INC
DP2
IND
DN2
GND
FIGURE 3-3:
HV7360/HV7361.
VSS
VL1
VL2
SN2
Typical Bipolar One-channel Three-level Ultrasound Transmitter Application Circuit for
+10V
+10V
0 to +100V
VDD
+2.5/3.3V VLL
VH
VL3
PE
DP1
INB
SN1
SP2
INC
DP2
IND
DN2
GND
FIGURE 3-4:
HV7360/HV7361.
TX1
DN1
INA
2.5/3.3V
Logic Input
SP1
VSS
VL1
VL2
0 to +100V
TX2
SN2
Typical Unipolar Two-channel Two-level Ultrasound Transmitter Application Circuit for
2017 Microchip Technology Inc.
DS20005570C-page 9
HV7360/HV7361
4.0
PACKAGING INFORMATION
4.1
Package Marking Information
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
DS20005570C-page 10
XXXXXX
XX e3
YYWWNNN
HV7360
GA e3
1724111
XXXXXX
XX e3
YYWWNNN
HV7361
GA e3
1718555
Product Code or Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for product code or customer-specific information. Package may or
not include the corporate logo.
2017 Microchip Technology Inc.
HV7360/HV7361
22-Ball Chip Array Ball Grid Array (JY) - 5x7 mm Body [CABGA]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
0.10 C
22X
NOTE 1
D
A
0.08 C
B
E
(DATUM B)
(DATUM A)
2X
0.10 C
2X
TOP VIEW
0.10 C
A1
A2
A
eD
2X (0.25)
C
SEATING
PLANE
SIDE VIEW
eE
e
2X (0.50)
e
22X Øb
0.15
0.08
eE
2
C A B
C
BOTTOM VIEW
Microchip Technology Drawing C04-414A Sheet 1 of 2
2017 Microchip Technology Inc.
DS20005570C-page 11
HV7360/HV7361
22-Ball Chip Array Ball Grid Array (JY) - 5x7 mm Body [CABGA]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units
Dimension Limits
Number of Terminals
e
Pitch
A
Overall Height
Ball Height
A1
A2
Package Thickness
Overall Length
D
eD
Overall Terminal Pitch
E
Overall Width
eE
Overall Terminal Pitch
b
Ball Diameter
MIN
0.91
0.12
0.66
0.20
MILLIMETERS
NOM
22
0.50 BSC
0.98
0.15
0.70
5.00 BSC
4.00 BSC
7.00 BSC
6.50 BSC
0.25
MAX
1.05
0.74
0.30
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Microchip Technology Drawing C04-414A Sheet 2 of 2
DS20005570C-page 12
2017 Microchip Technology Inc.
HV7360/HV7361
22-Ball Chip Array Ball Grid Array (JY) - 5x7 mm Body [CABGA]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
C1
G
E
ØX
C2
G
E
SILK SCREEN
RECOMMENDED LAND PATTERN
Units
Dimension Limits
Contact Pitch
E
Contact Pad Spacing
C1
Contact Pad Spacing
C2
Contact Pad Diameter (X22)
X
Contact Pad to Contact Pad
G
MIN
MILLIMETERS
NOM
0.50 BSC
4.00
6.50
0.25
MAX
0.20
Notes:
1. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing C04-2414A
2017 Microchip Technology Inc.
DS20005570C-page 13
HV7360/HV7361
NOTES:
DS20005570C-page 14
2017 Microchip Technology Inc.
HV7360/HV7361
APPENDIX A:
REVISION HISTORY
Revision C (June 2017)
The following is the list of modifications:
• Updated the operating ambient temperature in
Absolute Maximum Ratings † and in the
Temperature Specifications table
• Made minor text changes throughout the
document
Revision B (April 2017)
• Removed the INC to IND connection line and
changed the typical high voltage supply from
+200V to +100V in Figure 3-4
• Removed “HVCMOS® Technology for High
Performance” from the Features Section
• Made minor text changes throughout the
document
Revision A (June 2016)
• Converted Supertex Doc# DSFP-HV7360 and
Supertex Doc# DSFP-HV7361 to Microchip
DS20005570C
• Meged HV7360 and HV7361 into one document
• Replaced the 22-lead LFGA “LA” package with
22-lead CABGA “GA” package
• Made minor text changes throughout the
document
2017 Microchip Technology Inc.
DS20005570C-page 15
HV7360/HV7361
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office.
XX
PART NO.
Package
Options
Device
Devices:
-
X
-
Environmental
X
Media Type
HV7360
=
High-Voltage High-Speed Pulse Generator
with Built-in Fast RTZ Damping FETs
HV7361
=
High-Voltage High-Speed Pulse Generator
with Built-in Fast RTZ Damping FETs and
an Integrated Two-Terminal Low-Noise T/R
Switch
Package:
GA
=
22-lead CABGA
Environmental:
G
=
Lead (Pb)-free/RoHS-compliant Package
Media Type:
(blank)
=
364/Tray for GA Package
DS20005570C-page 16
Examples:
a) HV7360GA-G:
High-Voltage High-Speed Pulse
Generator with Built-in Fast RTZ
Damping FET, 22-lead CABGA
Package, 364/Tray
b) HV7361GA-G:
High-Voltage High-Speed Pulse
Generator with Built-in Fast RTZ
Damping FET and an Integrated
Two-Terminal Low-Noise T/R
Switch, 22-lead CABGA Package,
364/Tray
2017 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
Trademarks
The Microchip name and logo, the Microchip logo, AnyRate, AVR,
AVR logo, AVR Freaks, BeaconThings, BitCloud, CryptoMemory,
CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KEELOQ,
KEELOQ logo, Kleer, LANCheck, LINK MD, maXStylus,
maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB,
OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip
Designer, QTouch, RightTouch, SAM-BA, SpyNIC, SST, SST
Logo, SuperFlash, tinyAVR, UNI/O, and XMEGA are registered
trademarks of Microchip Technology Incorporated in the U.S.A.
and other countries.
ClockWorks, The Embedded Control Solutions Company,
EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS,
mTouch, Precision Edge, and Quiet-Wire are registered
trademarks of Microchip Technology Incorporated in the U.S.A.
Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any
Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo,
CodeGuard, CryptoAuthentication, CryptoCompanion,
CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average
Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial
Programming, ICSP, Inter-Chip Connectivity, JitterBlocker,
KleerNet, KleerNet logo, Mindi, MiWi, motorBench, MPASM, MPF,
MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach,
Omniscient Code Generation, PICDEM, PICDEM.net, PICkit,
PICtail, PureSilicon, QMatrix, RightTouch logo, REAL ICE, Ripple
Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI,
SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC,
USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and
ZENA are trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated in
the U.S.A.
Silicon Storage Technology is a registered trademark of Microchip
Technology Inc. in other countries.
GestIC is a registered trademark of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip Technology
Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2017, Microchip Technology Incorporated, All Rights Reserved.
ISBN: 978-1-5224-1804-7
== ISO/TS 16949 ==
2017 Microchip Technology Inc.
DS20005570C-page 17
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
Finland - Espoo
Tel: 358-9-4520-820
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
Hong Kong
Tel: 852-2943-5100
Fax: 852-2401-3431
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
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Tel: 86-10-8569-7000
Fax: 86-10-8528-2104
Austin, TX
Tel: 512-257-3370
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
China - Chongqing
Tel: 86-23-8980-9588
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Tel: 630-285-0071
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Raleigh, NC
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New York, NY
Tel: 631-435-6000
San Jose, CA
Tel: 408-735-9110
Tel: 408-436-4270
Canada - Toronto
Tel: 905-695-1980
Fax: 905-695-2078
DS20005570C-page 18
China - Dongguan
Tel: 86-769-8702-9880
China - Guangzhou
Tel: 86-20-8755-8029
China - Hangzhou
Tel: 86-571-8792-8115
Fax: 86-571-8792-8116
China - Hong Kong SAR
Tel: 852-2943-5100
Fax: 852-2401-3431
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
China - Shanghai
Tel: 86-21-3326-8000
Fax: 86-21-3326-8021
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
China - Shenzhen
Tel: 86-755-8864-2200
Fax: 86-755-8203-1760
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
India - Pune
Tel: 91-20-3019-1500
Japan - Osaka
Tel: 81-6-6152-7160
Fax: 81-6-6152-9310
Japan - Tokyo
Tel: 81-3-6880- 3770
Fax: 81-3-6880-3771
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
Taiwan - Kaohsiung
Tel: 886-7-213-7830
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
France - Saint Cloud
Tel: 33-1-30-60-70-00
Germany - Garching
Tel: 49-8931-9700
Germany - Haan
Tel: 49-2129-3766400
Germany - Heilbronn
Tel: 49-7131-67-3636
Germany - Karlsruhe
Tel: 49-721-625370
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Germany - Rosenheim
Tel: 49-8031-354-560
Israel - Ra’anana
Tel: 972-9-744-7705
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Italy - Padova
Tel: 39-049-7625286
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Norway - Trondheim
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Poland - Warsaw
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Romania - Bucharest
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Spain - Madrid
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Tel: 46-8-5090-4654
UK - Wokingham
Tel: 44-118-921-5800
Fax: 44-118-921-5820
2017 Microchip Technology Inc.
11/07/16