HV809
Offline High-Voltage EL Lamp Driver
Features
General Description
• Up to 200V DC Input Voltage
• 400V Peak-to-Peak Output Voltage
• Up to 350 nF Output Load
(100 in2 for 3.5 nF/in2 Lamp)
• Adjustable Output Lamp Frequency
• Adjustable On/Off Pulsing Frequency
The HV809 is an offline high-voltage EL lamp driver
integrated circuit designed for driving EL lamps of up to
350 nF at 400 Hz. The input supply voltage can be a
rectified nominal 120V AC source or any other DC
source up to 200V. The HV809 supplies the EL lamp
with an AC square wave with a peak-to-peak voltage of
twice the input DC voltage.
The HV809 has two internal oscillators, a low-voltage
output linear regulator, and a high-voltage output
H-bridge. The high-voltage output H-bridge frequency
is set by an external resistor connected between the
REL-Osc and GND pins. The EL lamp is connected
between the VA and VB pins. For the HV809 in the 8-pin
package, an external RC network can be connected
between the oscillator’s Osc1 and Osc2 pins to pulse
the EL lamp on and off.
Applications
•
•
•
•
Electronic Organizers
Handheld Portable Computers
Display Signs
Portable Instrumentation Equipment
For detailed circuit and application information, please
refer to Application Note, AN-H36.
Package Types
8-lead SOIC (Narrow Body)
(Top view)
8-lead SOIC (with Heat Slug)
(Top view)
HVIN 1
8
VA
HVIN 1
8
VA
VDD 2
7
VB
VDD 2
7
VB
Osc2 3
6
GND
Osc2 3
6
GND
Osc1 4
5
REL-Osc
Osc1 4
5
REL-Osc
Heat Slug
See Table 2-1 for pin information.
2018 Microchip Technology Inc.
DS20005630A-page 1
HV809
Functional Block Diagram
HVIN
Linear
Regulator
Q
VA
Q
VDD
Osc1
Osc2
REL-Osc
Q
Logic
and
Osc
VB
Q
GND
DS20005630A-page 2
2018 Microchip Technology Inc.
HV809
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings†
High-Voltage Input, HVIN ..................................................................................................................................... +210V
Internal Supply Voltage, VDD .................................................................................................................................. +15V
Maximum Junction Temperature, TJMAX ............................................................................................................. +125°C
Storage Temperature, TS ..................................................................................................................... –55°C to +150°C
Power Dissipation:
8-lead SOIC ........................................................................................................................................... 500 mW
8-lead SOIC (with Heat Slug) ................................................................................................................1.5 Watts
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at those or any other conditions above those
indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter
Sym.
Min.
Typ.
Max.
Unit
Conditions
High-Voltage Input
HVIN
50
—
200
V
Load Capacitance
CL
—
—
350
nF
REL = 1 MΩ, HVIN = 170V
—
—
150
nF
REL = 390 kΩ, HVIN = 170V
Operating Temperature
TA
–25
—
+85
°C
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications: Over recommended operating conditions unless otherwise indicated; TA = 25°C
Parameter
Sym.
—
70
mA HVIN = 170V, REL = 1 MΩ, CL = 350 nF
—
—
9
mA HVIN = 170V, REL = 1 MΩ, CL = 50 nF
—
—
400
μA
HVIN = 170V, REL = 1 MΩ,
Osc1 = GND, No load
—
—
100
μA
HVIN = 170V, REL = 1 MΩ,
Osc1 = VDD, No load
ISINK
—
300
—
μA
VOsc2 = 1V
ISOURCE
—
100
—
μA
VOsc2 = VDD–1V
IOsc1
—
±10
—
μA
VOsc1 = GND and VDD
IIN
Quiescent Supply Current
IINQ
Osc2 Sink Current
Osc1 Logic Input Leakage
Current
Osc1 Hysteresis Voltage
Conditions
—
High-Voltage Supply Current
Osc2 Source Current
Min. Typ. Max. Unit
VOsc1(HYST)
—
2.5
—
V
Minimum Differential Output
Voltage across Lamp
VA–B
—
—
400
V
HVIN = 200V
Internal Supply Voltage
VDD
8
10
12
V
No load on VDD
AC ELECTRICAL CHARACTERISTICS
Electrical Specifications: Over recommended operating conditions unless otherwise indicated; TA = 25°C
Parameter
VA-B Output Drive Frequency
Sym.
fEL
Min.
Typ. Max.
Unit
Conditions
320
400
480
Hz
REL = 1 MΩ, Osc1 = GND, CL = 350 nF
0.8
1
1.2
kHz
REL = 390 kΩ, Osc1 = GND, CL = 150 nF
Output Rise Time
tr
—
180
250
μs
CL = 150 nF, HVIN = 170V
Output Fall Time
tf
—
50
100
μs
CL = 150 nF, HVIN = 170V
2018 Microchip Technology Inc.
DS20005630A-page 3
HV809
TEMPERATURE SPECIFICATIONS
Parameter
Sym.
Min.
Typ.
Max.
Unit
Operating Ambient Temperature
TA
–25
—
+85
°C
Maximum Junction Temperature
TJMAX
—
—
+125
°C
TS
–55
—
+150
°C
8-lead SOIC
JA
—
101
—
°C/W
8-lead SOIC (with Heat Slug)
JA
—
84
—
°C/W
Conditions
TEMPERATURE RANGE
Storage Temperature
PACKAGE THERMAL RESISTANCE
DS20005630A-page 4
2018 Microchip Technology Inc.
HV809
2.0
PIN DESCRIPTION
The details on the pins of HV809 8-lead SOIC (narrow
body) and 8-lead SOIC (narrow body with heat slug)
are listed on Table 2-1. See Package Types for the
location of pins.
TABLE 2-1:
PIN FUNCTION TABLE
Pin Number
Pin Name
1
HVIN
High-voltage input supply pin
2
VDD
Internal supply voltage
3
Osc2
The RC network can be connected between the oscillator’s Osc1 and Osc2 pins to
pulse the EL lamp on and off.
4
Osc1
The Output H-bridge can be enabled and disabled by connecting the Osc1 pin to the
GND and VDD pins. The output can be left enabled by connecting the Osc1 pin to
GND.
5
REL-Osc
EL lamp frequency is controlled via an external REL resistor connected between the
REL-Osc and GND pins of the device.
6
GND
7
VB
VB side of the EL lamp driver H-bridge. Connection for one of the EL lamp terminals.
8
VA
VA side of the EL lamp driver H-bridge. Connection for one of the EL lamp terminals.
Note 1:
Description
Ground pin
Heat slug is at ground potential.
2018 Microchip Technology Inc.
DS20005630A-page 5
HV809
3.0
FUNCTIONAL DESCRIPTION
3.0 to 12VDC
DC-DC
Converter
50 to 200VDC
R
CIN
VBATT
CDD
1
HVIN
VA 8
2
VDD
VB
7
3
Osc2
GND
6
4
Osc1
REL-Osc
5
C
FIGURE 3-1:
3.0 to 12VDC
EL Lamp
REL
HV809
Pulsing EL Lamp.
DC-DC
Converter
VBATT
50 to 200VDC
CIN
Push
Button
DS20005630A-page 6
HVIN
VA 8
2
VDD
VB
7
3
Osc2
GND
6
4
Osc1
REL-Osc
5
EL Lamp
R
CDD
FIGURE 3-2:
1
C
HV809
REL
Push-button, Delayed Turn-off.
2018 Microchip Technology Inc.
HV809
VA
VB
VA - VB
HVIN = 170V, REL = 1 MΩ and CL = 350 nF
FIGURE 3-3:
TABLE 3-1:
Typical Waveform on VA and VB and Differential Waveform VA–VB.
FUNCTION TABLE
Inputs
Osc1
Outputs
VA
VB
GND
Enabled
Enabled
VDD
Disabled
Disabled
2018 Microchip Technology Inc.
DS20005630A-page 7
HV809
4.0
PACKAGING INFORMATION
4.1
Package Marking Information
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
DS20005630A-page 8
8-lead SOIC
Example
XXXXXXX
e3 YYWW
NNN
HV809LG
e3 1814
772
8-lead SOIC
Example
XXXXXXX
e3 YYWW
NNN
HV809SG
e3 1818
117
Product Code or Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for product code or customer-specific information. Package may or
not include the corporate logo.
2018 Microchip Technology Inc.
HV809
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
2018 Microchip Technology Inc.
DS20005630A-page 9
HV809
8-Lead SOIC (Narrow Body w/Heat Slug) Package Outline (SG)
4.90x3.90mm body, 1.70mm height (max), 1.27mm pitch
D1
D
8
8
Exposed
Thermal
Pad Zone
E2
E
E1
Note 1
(Index Area
D/2 x E1/2)
1
1
Top View
Bottom View
θ1
A
View B
h
h
A
A2
Note 1
Seating
Plane
e
A1
L
b
L1
L2
Gauge
Plane
θ
Seating
Plane
A
Side View
View A - A
View B
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
Note:
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LGHQWL¿HUDQHPEHGGHGPHWDOPDUNHURUDSULQWHGLQGLFDWRU
Symbol
MIN
Dimension
NOM
(mm)
MAX
A
A1
A2
b
1.25*
0.00
1.25
0.31
-
-
-
-
1.70
0.15
1.55*
0.51
D
D1
E
E1
E2
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4.80* 3.30† 5.80* 3.80* 2.29†
4.90
-
6.00
3.90
-
5.00* 3.81† 6.20* 4.00* 2.79†
1.27
BSC
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0.25
0.40
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0.50
1.27
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REF
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Drawings not to scale.
DS20005630A-page 10
2018 Microchip Technology Inc.
HV809
APPENDIX A:
REVISION HISTORY
Revision A (August 2018)
• Converted Supertex Doc# DSFP-HV908 to Microchip DS20005630A
• Removed “Processed with HVCMOS® Technology” from the Features section
• Removed the “Output VDD Current” parameter
from the DC Electrical Characteristics table
• Removed the 7-lead TO-220 package option
• Changed the quantity of the LG and SG packages
from 2500/Reel to 3300/Reel
• Made minor text changes throughout the document
2018 Microchip Technology Inc.
DS20005630A-page 11
HV809
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office.
PART NO.
Device
Device:
Packages:
Environmental:
Media Type:
XX
-
Package
Options
HV809
X
-
Environmental
=
X
Media Type
Offline High-Voltage EL Lamp Driver
LG
=
8-lead SOIC
SG
=
8-lead SOIC (with Heat Slug)
G
=
Lead (Pb)-free/RoHS-compliant Package
(blank)
=
3300/Reel for an LG Package
(blank)
=
3300/Reel for an SG Package
DS20005630A-page 12
Examples:
a) HV809LG-G:
Offline High-Voltage EL Lamp Driver,
8-lead SOICPackage, 3300/Reel
b) HV809SG-G:
Offline High-Voltage EL Lamp Driver,
8-lead SOIC Package (with Heat Slug),
3300/Reel
2018 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
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CERTIFIED BY DNV
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© 2018, Microchip Technology Incorporated, All Rights Reserved.
ISBN: 978-1-5224-3381-1
== ISO/TS 16949 ==
2018 Microchip Technology Inc.
DS20005630A-page 13
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DS20005630A-page 14
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2018 Microchip Technology Inc.
10/25/17