HV9110/HV9112/HV9113
High-Voltage Current-Mode PWM Controller
Features
General Description
• Input Voltage Range of VDD Regulator
- HV9110: 10V to 120V
- HV9112: 9V to 80V
- HV9113: 10V to 120V
• Maximum Duty, Feedback Accuracy
- HV9110: 49%, 1%
- HV9112: 49%, 2%
- HV9113: 99%, 1%
• Current Mode Control
• 1 MHz clock
HV9110/HV9112/HV9113 are Switch-Mode Power
Supply (SMPS) controllers suitable for the control of a
variety of converter topologies, including the flyback
converter and the forward converter.
The VDD regulator supports an input voltage as high as
80V or 120V.
HV9110/HV9112/HV9113 controllers include all essentials for a power converter design, such as a bandgap
reference, an error amplifier, a ramp generator, a highspeed PWM comparator, and a gate driver. A shutdown
latch provides on/off control.
Applications
The HV9110 and HV9113 feature an input voltage
range of 10V to 120V, and the HV9112 has an input
voltage range of 9V to 80V. The HV9110 and HV9112
have a maximum duty of 49%, while the HV9113 has a
maximum duty of 99%.
• DC/DC Power Converters
Package Type
14-lead SOIC
1
14
See Table 3-1 for pin information.
2016 Microchip Technology Inc.
DS20005505A-page 1
HV9110/HV9112/HV9113
Functional Block Diagram
HV9110/HV9112
VIN
VDD
VREF
DS20005505A-page 2
2016 Microchip Technology Inc.
HV9110/HV9112/HV9113
Functional Block Diagram
HV9113
VIN
VDD
VREF
2016 Microchip Technology Inc.
DS20005505A-page 3
HV9110/HV9112/HV9113
1.0
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS†
Input Voltage, VIN
HV9110/HV9113 ............................................................................................................................................ 120V
HV9112............................................................................................................................................................ 80V
Device Supply Voltage, VDD ................................................................................................................................... 15.5V
Logic Input Voltage Range .............................................................................................................. –0.3V to VDD + 0.3V
Linear Input Voltage Range............................................................................................................. –0.3V to VDD + 0.3V
Storage Temperature Range ................................................................................................................ –65°C to +150°C
Operating Temperature Range............................................................................................................. –55°C to +125°C
Power Dissipation: 14-lead SOIC....................................................................................................................... 750 mW
† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at those or any other conditions above those indicated in the
operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.
ELECTRICAL CHARACTERISTICS
Electrical Specifications: VDD = 10V, VIN = 48V, VDISC = 0V, RBIAS = 390 kΩ, ROSC = 330 kΩ, TA= 25°C unless otherwise noted.
Parameters
REFERENCE
Output Voltage
HV9110/13
HV9112
HV9110/13
Output Impedance
Short Circuit Current
Change in VREF with Temperature
OSCILLATOR
Oscillator Frequency
Initial Accuracy
Min.
Typ.
Max.
Units
VREF
3.92
3.88
3.82
4
4
4
4.08
4.12
4.16
V
15
—
—
30
125
0.25
45
250
—
1
80
160
—
—
3
100
200
—
170
—
120
240
15
—
49
95
—
—
—
49.4
97
225
—
80
49.6
99
—
0
125
%
(Note 1)
ns
%
ns
HV9113 only (Note 1)
1
—
1.2
80
1.4
120
V
ns
ZOUT
ISHORT
∆VREF
fMAX
fOSC
VDD Regulation
Temperature Coefficient
PWM
Maximum Duty
Cycle
Sym.
HV9110/HV9112
HV9113
HV9113
—
—
DMAX
Dead Time
Minimum Duty Cycle
Pulse Width where Pulse drops out
CURRENT LIMIT
DMIN
Maximum Input Signal
Delay to Output
VLIM
tD
DS20005505A-page 4
Conditions
RL = 10 MΩ
RL = 10 MΩ,
TA = –55°C to +125°C
kΩ
(Note 1)
μA
VREF = GND
mV/°C TA = –55°C to +125°C
(Note 1)
MHz
kHz
ROSC = 0Ω
ROSC = 330 kΩ (Note )
ROSC = 150 kΩ (Note )
%
9.5V < VDD < 13.5V
ppm/°C TA = –55°C to +125°C
(Note 1)
(Note 1)
VFB = 0V
VCS = 1.5V, VCOMP ≤ 2V
(Note 1)
2016 Microchip Technology Inc.
HV9110/HV9112/HV9113
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: VDD = 10V, VIN = 48V, VDISC = 0V, RBIAS = 390 kΩ, ROSC = 330 kΩ, TA= 25°C unless otherwise noted.
Parameters
Sym.
ERROR AMPLIFIER
Feedback Voltage
HV9110/13
VFB
HV9112
Input Bias Current
IIN
Input Offset Voltage
VOS
Open-loop Voltage Gain
AVOL
Unity Gain Bandwidth
GB
Output Source Current
ISOURCE
Output Sink Current
ISINK
HIGH-VOLTAGE REGULATOR AND START-UP
Input Voltage
HV9110/13
VIN
HV9112
Input Leakage Current
IIN
Regulator Turn-off Threshold Voltage
VTH
Undervoltage Lockout
VLOCK
SUPPLY
Supply Current
IDD
Quiescent Supply Current
IQ
Nominal Bias Current
IBIAS
Operating Range
VDD
SHUTDOWN LOGIC
Shutdown Delay
tSD
NSD Pulse Width
RST Pulse Width
Latching Pulse Width
Input Low Voltage
Input High Voltage
Input Current, Input High Voltage
Input Current, Input Low Voltage
OUTPUT
Output High Voltage HV9110/13
HV9112
HV9110/13
Output Low Voltage
Output Resistance
tSW
tRW
tLW
VIL
VIH
IIH
IIL
VOH
All
HV9110/13
VOL
Pull up
Pull down
Pull up
Pull down
ROUT
Rise Time
Fall Time
tR
tF
Min.
Typ.
Max.
3.96
4
4.04
3.92
4
4.08
—
25
500
Nulled during trim
60
80
—
1
1.3
—
–1.4
–2
—
0.12
0.15
—
Units
V
nA
—
dB
MHz
mA
mA
Conditions
VFB shorted to COMP
VFB = 4V
(Note 1)
(Note 1)
VFB = 3.4V
VFB = 4.5V
—
—
—
8
7
—
—
—
8.7
8.1
120
80
10
9.4
8.9
V
IIN < 10 µA; VCC > 9.4V
μA
V
V
VDD > 9.4V
IIN = 10 µA
—
—
—
9
0.75
0.55
20
—
1
—
—
13.5
mA
mA
μA
V
CL < 75 pF
VNSD = 0V
—
50
100
ns
50
50
25
—
7
—
—
—
—
—
—
—
1
–25
—
—
—
2
—
5
–35
ns
ns
ns
V
V
μA
μA
CL= 500 pF, VCS= 0V
(Note 1)
(Note 1)
(Note 1)
VNSD, VRST = 0V(Note 1)
VDD–0.25
—
—
—
—
V
VDD–0.3
VDD–0.3
—
—
—
—
0.2
—
—
0.3
—
—
—
—
—
—
15
8
20
10
30
20
25
20
30
30
75
75
V
Ω
VIN = VDD
VIN = 0V
IOUT = 10 mA
IOUT = 10 mA,
TA = –55°C to 125°C
IOUT = –10 mA
IOUT = –10 mA,
TA = –55°C to 125°C
IOUT = ±10 mA
Ω
IOUT = ±10 mA,
TA = –55°C to 125°C
ns
ns
CL = 500 pF (Note 1)
CL = 500 pF (Note 1)
Note 1: Design guidance only; Not 100% tested in production.
2: Stray capacitance on OSC input pin must be ≤5 pF.
2016 Microchip Technology Inc.
DS20005505A-page 5
HV9110/HV9112/HV9113
TEMPERATURE SPECIFICATIONS
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
TEMPERATURE RANGES
Operating Temperature
—
–55
—
125
°C
Storage Temperature
—
–65
—
150
°C
θja
—
83
—
°C/W
PACKAGE THERMAL RESISTANCE
14-lead SOIC
1.1
Truth Table
TRUTH TABLE
SHUTDOWN
RESET
OUTPUT
H
H
H
H→L
L
H
Off, not latched
L
L
Off, latched
L→H
L
Off, latched, no change
DS20005505A-page 6
Normal operation
Normal operation, no change
2016 Microchip Technology Inc.
HV9110/HV9112/HV9113
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g. outside specified power supply range) and therefore outside the warranted range.
1M
1M
100k
10k
fOUT (Hz)
HV9113
Z0 (Ω)
1k
100
HV9110, HV9112
100k
10
1
100
1k
10k
100k
1M
10k
10k
10M
100k
FIGURE 2-1:
Impedance (Z0).
Error Amplifier Output
FIGURE 2-4:
Output Switching Frequency
vs. Oscillator Resistance.
0
80
-10
70
-20
Gain (dB)
PSSR (dB)
-30
-40
-50
-60
-70
-80
10
100
1k
10k
100k
1M
60
180
50
120
40
60
30
0
20
-60
10
-120
0
-180
-10
100
1k
Frequency (Hz)
FIGURE 2-2:
Reference.
PSRR –Error Amplifier and
FIGURE 2-5:
Gain/Phase.
100k
1M
Error Amplifier Open-loop
10k
ROSC = 100k
VDD = 12V
VDD = 10V
tOFF (ns)
Bias Current (μA)
10k
Frequency (Hz)
100
10
1M
ROSC (Ω)
Frequency (Hz)
Phase (OC)
100m
1k
ROSC = 10k
ROSC = 1k
1
100k
1M
10M
100
100m
FIGURE 2-3:
Resistance.
Bias Current vs. Bias
2016 Microchip Technology Inc.
1
10
100
1k
10k
100k
1M
RDISCHARGE (Ω)
Bias Resistance (Ω)
FIGURE 2-6:
(HV9113 only).
RDISCHARGE vs. tOFF
DS20005505A-page 7
HV9110/HV9112/HV9113
3.0
PIN DESCRIPTION
Table 3-1
shows
the
pin
description
for
HV9110/HV9112/HV9113. The locations of the pins are
listed in Features.
TABLE 3-1:
PIN DESCRIPTION
Pin Number
HV9110/HV9112/HV9113
Pin Name
1
BIAS
Description
Internal bias, current set
2
VIN
High-voltage VDD regulator input
3
CS
Current sense input
4
GATE
Gate drive output
5
GND
Ground
6
VDD
7
OSCO
Oscillator output
8
OSCI
Oscillator input
9
DISC
Oscillator discharge, current set
10
VREF
4V reference output
Reference voltage level can be overridden by an externally applied voltage
source.
High-voltage VDD regulator output
11
NSD
Active low input to set shutdown latch
12
RST
Active high input to reset shutdown latch
13
COMP
14
FB
DS20005505A-page 8
Error amplifier output
Feedback voltage input
2016 Microchip Technology Inc.
HV9110/HV9112/HV9113
4.0
TEST CIRCUITS
The test circuits for characterizing error amplifier output impedance, ZOUT, and error amplifier, power supply rejection
ratio, PSRR, are shown in Figure 4-1 and Figure 4-2.
+10 VDD
0.1V swept
10 Hz-1.0 MHz
1V swept 100 Hz-2.2 MHz
60k
100k1%
–
FB
+
Reference
GND
V1
Tektronix
P6021
(1 turn
secondary)
100k1%
10.0V
V2
40k
4.0V
Reference
100 nF
NOTE:
Set Feedback Voltage so that VCOMP = VDIVIDE ±1 mV
before connecting transformer
FIGURE 4-1:
–
+
Error Amp ZOUT.
2016 Microchip Technology Inc.
V2
V1
100 nF
FIGURE 4-2:
PSRR.
DS20005505A-page 9
HV9110/HV9112/HV9113
5.0
DETAILED DESCRIPTION
5.1
High-Voltage Regulator
The
high-voltage
regulator
included
in
HV9110/HV9112/HV9113 consists of a high-voltage Nchannel Depletion-mode DMOS transistor driven by an
error amplifier, providing a current path between the
VIN terminal and the VDD terminal. The maximum current, about 20 mA, occurs when VDD = 0, with current
reducing as VDD rises. This path shuts off when VDD
rises to somewhere between 8V and 9.4V. So, if VDD is
held at 10V or 12V by an external source, no current
other than leakage is drawn through the high voltage
transistor. This minimizes dissipation within the highvoltage regulator.
Use an external capacitor between VDD and GND. This
capacitor should have good high-frequency characteristics. Ceramic caps work well.
The device uses a compound resistor divider to monitor
VDD for both the undervoltage lockout circuit and the
shutoff circuit of the high-voltage FET. Setting the
undervoltage sense point about 0.6V lower on the
string than the FET shutoff point guarantees that the
undervoltage lockout releases before the FET shuts
off.
5.2
Bias Circuit
HV9110/HV9112/HV9113 require an external bias
resistor, connected between the Bias pin and GND, to
set currents in a series of current mirrors used by the
analog sections of the chip. The nominal external bias
current requirement is 15 µA to 20 µA, which can be set
by a 390 kΩ to 510 kΩ resistor if VDD = 10V, or a
510 kΩ to 680 kΩ resistor if VDD = 12V. A precision
resistor is not required, ±5% meets device requirements.
5.3
Clock Oscillator
The clock oscillator of the HV9110/HV9112/HV9113
consists of a ring of CMOS inverters, timing capacitors,
and a capacitor-discharge FET. A single external resistor between the OSCI and OSCO sets the oscillator frequency. (See Figure 2-4.)
The HV9110 and HV9112 include a frequency-dividing
flip-flop that allows the part to operate with a 50% duty
limit. Accordingly, the effective switching frequency of
the power converter is half the oscillator frequency.
(See Figure 2-4.)
An internal discharge FET resets the oscillator ramp at
the end of the oscillator cycle. The discharge FET is
externally connected to GND, by way of a resistor. The
resistor programs the oscillator dead time at the end of
the oscillator period.
DS20005505A-page 10
The oscillator turns off during shutdown to reduce supply current by about 150 μA.
5.4
Reference
The reference of the HV9110/HV9112/HV9113 consists
of a band-gap reference, followed by a buffer amplifier,
which scales the voltage up to 4V. The scaling resistors
of the buffer amplifier are trimmed during manufacture
so that the output of the error amplifier, when connected in a gain of –1 configuration, is as close to 4V
as possible. This nulls out the input offset of the error
amplifier. As a consequence, even though the
observed reference voltage of a specific part may not
be exactly 4V, the feedback voltage required for proper
regulation will be 4V.
An approximately 50 kΩ resistor is located internally
between the output of the reference buffer amplifier
and the circuitry it feeds—reference output pin and
non-inverting input to the error amplifier. This allows
overriding the internal reference with a low impedance
voltage source ≤ 6V. Using an external reference reinstates the input offset voltage of the error amplifier.
Overriding the reference should seldom be necessary.
The reference of the HV9110/HV9112/HV9113 is a
high-impedance node, and usually there will be significant electrical noise nearby. Therefore, a bypass
capacitor between the reference pin and GND is
strongly recommended. The reference buffer amplifier
is compensated to be stable with a capacitive load of
0.01 µF to 0.1 µF.
5.5
Error Amplifier
The error amplifier on HV9110/HV9112/HV9113 is a
low-power, differential-input, operational amplifier. A
PMOS input stage is used, so the common mode range
includes ground and the input impedance is high.
5.6
Current Sense Comparators
The HV9110/HV9112/HV9113 use a dual-comparator
system with independent comparators for modulation
and current limiting. This provides the designer greater
latitude in compensation design, as there are no
clamps, except ESD protection, on the compensation
pin.
5.7
Remote Shutdown
The NSD and RST pins control the shutdown latch.
These pins have internal current-source pull-ups so
they can be driven from open drain logic. When not
used they should be left open or connected to VDD.
2016 Microchip Technology Inc.
HV9110/HV9112/HV9113
5.8
Output Buffer
The output buffer of HV9110/HV9112/HV9113 is of
standard CMOS construction P-channel pull-up and Nchannel pull-down. Thus, the body-drain diodes of the
output stage can be used for spike clipping. External
Schottky diode clamping of the output is not required.
VDD
1.5V
CS
0
50%
NSD
tR ≤ 10ns
tF ≤ 10ns
50%
0
tSD
tD
VDD
VDD
NSD
0
VDD
90%
GATE
0
90%
GATE
0
tSW
50%
50%
tR, tF ≤ 10ns
tLW
VDD
RST
0
50%
FIGURE 5-1:
Shutdown Timing Waveforms.
50%
50%
tRW
2016 Microchip Technology Inc.
DS20005505A-page 11
HV9110/HV9112/HV9113
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
14-lead SOIC
XXXXXXXXXXX
XXXXXXXXX e3
YYWWNNN
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
DS20005505A-page 12
Example
HV9110NG
1632888 e3
Product Code or Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for product code or customer-specific information. Package may or
not include the corporate logo.
2016 Microchip Technology Inc.
HV9110/HV9112/HV9113
14-Lead SOIC (Narrow Body) Package Outline (NG)
8.65x3.90mm body, 1.75mm height (max), 1.27mm pitch
D
14
θ1
E1 E
Note 1
(Index Area
D/2 x E1/2)
1
L
L1
Top View
Gauge
Plane
θ
Seating
Plane
View B
A
View
B
h
A A2
h
Seating
Plane
e
A1
L2
Note 1
b
Side View
View A-A
A
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
Note:
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DPROGHGPDUNLGHQWL¿HUDQHPEHGGHGPHWDOPDUNHURUDSULQWHGLQGLFDWRU
Symbol
MIN
Dimension
NOM
(mm)
MAX
A
A1
A2
b
1.35*
0.10
1.25
0.31
-
-
-
-
1.75
0.25
1.65*
0.51
D
E
E1
e
8.55* 5.80* 3.80*
8.65
6.00
3.90
8.75* 6.20* 4.00*
1.27
BSC
h
L
0.25
0.40
-
-
0.50
1.27
L1
1.04
REF
L2
0.25
BSC
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Drawings are not to scale.
2016 Microchip Technology Inc.
DS20005505A-page 13
HV9110/HV9112/HV9113
NOTES:
DS20005505A-page 14
2016 Microchip Technology Inc.
HV9110/HV9112/HV9113
APPENDIX A:
REVISION HISTORY
Revision A (June 2016)
• Merged Supertex Doc #s DSFP-HV9110, DSFPHV9112 and DSFP-DSFP-HV9113 to Microchip
DS20005505A.
• Revised Electrical Characteristics to accommodate the merged products.
• Updated pin names to reflect new naming convention.
• Significant text changes to Detailed Description.
• Minor text changes throughout.
2016 Microchip Technology Inc.
DS20005505A-page 15
HV9110/HV9112/HV9113
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
-
XX
X
-
Package Environmental
Options
X
Media
Type
Examples:
a) HV9110NG-G:
b) HV9112NG-G:
Device:
HV9110 =
HV9112 =
HV9113 =
High-voltage Current-mode PWM
Controller, 10V to 120V Input Voltage Range,
49% Duty Cycle
High-voltage Current-mode PWM
Controller, 9V to 80V Input Voltage Range,
49% Duty Cycle
High-voltage Current-mode PWM
Controller, 10V to 120V Input Voltage Range,
99% Duty Cycle
Package:
NG
= 14-lead SOIC
Environmental
G
=
Media Type:
(blank) =
DS20005505A-page 16
c) HV9113NG-G:
High-voltage Current-mode PWM
Controller 10V to 120V Input Voltage Range, 49% Duty Cycle,
14-lead SOIC Package, 53/Tube
High-voltage
Current-mode
PWM Controller, 9V to 80V Input
Voltage Range, 49% Duty
Cycle,14-lead SOIC Package,
53/Tube
High-voltage Current-mode PWM
Controller, 10V to 120V Input Voltage Range, 99% Duty Cycle,
14-lead SOIC Package, 53/Tube
Lead (Pb)-free/RoHS-compliant Package
53/Tube for an NG package
2016 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
DS20005505AInformation contained in this publication regarding device applications and the like is provided only for your
convenience and may be superseded by updates. It is your
responsibility to ensure that your application meets with your
specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER
EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY
OR OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
2016 Microchip Technology Inc.
Trademarks
The Microchip name and logo, the Microchip logo, AnyRate,
dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KEELOQ,
KEELOQ logo, Kleer, LANCheck, LINK MD, MediaLB, MOST,
MOST logo, MPLAB, OptoLyzer, PIC, PICSTART, PIC32 logo,
RightTouch, SpyNIC, SST, SST Logo, SuperFlash and UNI/O
are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
ClockWorks, The Embedded Control Solutions Company,
ETHERSYNCH, Hyper Speed Control, HyperLight Load,
IntelliMOS, mTouch, Precision Edge, and QUIET-WIRE are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut,
BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, Dynamic Average Matching, DAM, ECAN,
EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip
Connectivity, JitterBlocker, KleerNet, KleerNet logo, MiWi,
motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB,
MPLINK, MultiTRAK, NetDetach, Omniscient Code
Generation, PICDEM, PICDEM.net, PICkit, PICtail,
PureSilicon, RightTouch logo, REAL ICE, Ripple Blocker,
Serial Quad I/O, SQI, SuperSwitcher, SuperSwitcher II, Total
Endurance, TSHARC, USBCheck, VariSense, ViewSpan,
WiperLock, Wireless DNA, and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
GestIC is a registered trademarks of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip
Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2016, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
ISBN: 978-1-5224-0736-2
DS20005505A-page 17
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
Germany - Dusseldorf
Tel: 49-2129-3766400
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
Hong Kong
Tel: 852-2943-5100
Fax: 852-2401-3431
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
China - Beijing
Tel: 86-10-8569-7000
Fax: 86-10-8528-2104
Austin, TX
Tel: 512-257-3370
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Cleveland
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Novi, MI
Tel: 248-848-4000
Houston, TX
Tel: 281-894-5983
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
New York, NY
Tel: 631-435-6000
San Jose, CA
Tel: 408-735-9110
Canada - Toronto
Tel: 905-695-1980
Fax: 905-695-2078
China - Dongguan
Tel: 86-769-8702-9880
China - Guangzhou
Tel: 86-20-8755-8029
China - Hangzhou
Tel: 86-571-8792-8115
Fax: 86-571-8792-8116
China - Hong Kong SAR
Tel: 852-2943-5100
Fax: 852-2401-3431
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
China - Shenzhen
Tel: 86-755-8864-2200
Fax: 86-755-8203-1760
India - Pune
Tel: 91-20-3019-1500
Japan - Osaka
Tel: 81-6-6152-7160
Fax: 81-6-6152-9310
Japan - Tokyo
Tel: 81-3-6880- 3770
Fax: 81-3-6880-3771
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
Germany - Karlsruhe
Tel: 49-721-625370
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Italy - Venice
Tel: 39-049-7625286
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Poland - Warsaw
Tel: 48-22-3325737
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
Sweden - Stockholm
Tel: 46-8-5090-4654
UK - Wokingham
Tel: 44-118-921-5800
Fax: 44-118-921-5820
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
Taiwan - Kaohsiung
Tel: 886-7-213-7828
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
06/23/16
DS20005505A-page 18
2016 Microchip Technology Inc.