HV9150K6-G

HV9150 High-Voltage Output Hysteretic-Mode Step-Up DC/DC Controller Features General Description • 6V to 500V Wide Output Voltage Range • 2.7V Low Input Voltage • 5W Maximum Output Power with External MOSFET Driver • Built-in Charge Pump Converter for the Gate Driver • Programmable Switching Frequency from 40 kHz to 400 kHz • Four Programmable Duty Cycles from 50% to 87.5% • FB Return Ground Switch for Power-Saving Applications • Built-In Delay Timer for Internal Protection • Non-Isolated DC/DC Converter The HV9150 is a high output voltage Hysteretic mode step-up DC/DC controller that has a built-in charge pump converter and a linear regulator for a wide range of input voltage. The Charge Pump Converter mode is ideal for battery-powered applications. The internal converter can provide a minimum of 5V gate driver output voltage (at VIN = 2.7V) to the external N-channel MOSFET. The range of 2.7V to 4.5V input supply voltage is ideal for battery-powered applications, such as portable electronic equipment. The internal linear regulator is selected when a higher supply voltage rail is available in the system. Applications In addition, a built-in timer is available to protect the internal circuit and help dissipate the energy from the external high-voltage storage capacitor. This device is designed for systems requiring high-voltage and low-current applications such as MEMS devices. A feedback return ground path switch is also integrated into the device to minimize the quiescent current during the controller shutdown. This feature provides power savings for energy-critical applications. • Portable Electronic Equipment • MEMS • Printers Package Type CCP2+ CCP2- CCP1+ CCP1- 16-lead QFN (Top View) 16 VLL 1 VDD GND GATE EN FB_RTN CT EXT_REF FREQ_ADJ FB VCONTROL CP_EN Pads are at the bottom of the package. Center heat slug is at ground potential. See Table 3-1 for pin information.  2017-2019 Microchip Technology Inc. DS20005689B-page 1 HV9150 Functional Block Diagram VDD CCP1+/- CCP2+/- VLL CP Mode 3x Charge Pump Converter LDO Mode VLL VDD LDO VLL CP_EN VDD VCONTROL (Duty Cycle Adj) GATE OSC VLL FREQ_ADJ VLL VREF - + Hysteretic Mode Controller EXT_REF FB FP_RTN EN Delay CT DS20005689B-page 2 GND  2017-2019 Microchip Technology Inc. HV9150 Typical Application Circuits VDD 0.22μF CCP1± CCP2± 0.22μF 0.22μF VIN 2.7 - 4.5V 1.0μF VLL CP Mode L LDO Mode VDD 3x Charge Pump Converter LDO CP_EN VLL VOUT 6.0 - 500V VDD VCONTROL GATE OSC VLL VLL FREQ_ADJ VREF - + RFREQ EXT_REF FB R2 FB_RTN 0V/3.3V R1 EN Delay CT GND Charge Pump (CP) Mode VDD CCP1± CCP2± CP Mode 3x Charge Pump Converter VIN 5.0 - 12V 1.0μF VLL L LDO Mode VDD LDO CP_EN VLL VOUT 15 - 500V VDD GATE VCONTROL OSC VLL VLL FREQ_ADJ VREF - + RFREQ EXT_REF FB R2 FB_RTN 0V/3.3V EN R1 Delay CT GND Linear Regulator (LDO) Mode  2017-2019 Microchip Technology Inc. DS20005689B-page 3 HV9150 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings† Input Voltage Supply, VLL ........................................................................................................................... –0.5V to +5V Charge Pump Output Voltage, VDD ....................................................................................................... –0.5V to +13.6V Logic Input Levels ............................................................................................................................. –0.5V to VLL +0.5V Operating Ambient Temperature, TA ................................................................................................... –25°C to +125°C Storage Temperature, TS...................................................................................................................... –65°C to +150°C Continuous Power Dissipation (On a 3 x 4-inch FR4 PCB at TA= 25°C): 16-lead QFN .......................................................................................................................................... 3000 mW † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS Parameter Sym. Min. Typ. Max. Unit Input Voltage (CP Mode) VLL 2.7 — 4.5 V High-level Input Voltage VIH 0.8 VLL — VLL V Low-level Input Voltage VIL 0 — 0.2 VLL V Conditions DC ELECTRICAL CHARACTERISTICS Electrical Specifications: Over recommended operating supply voltages and temperatures; unless otherwise noted, TJ = 25°C. Parameter Sym. Min. Typ. Max. Unit ILLQ(off) — — 2 μA — — 1.5 — — 4 — — 1 — — 2.5 Conditions POWER SUPPLY Quiescent VLL Supply Current (EN = ‘0’) VLL Supply Current (EN = ‘1’) GATE = NC GATE = 300 pF ILL(on) mA fOSC = 100 kHz, VLL = 4.5V mA fOSC = 100 kHz, VDD = 12.6V VDD Supply Current GATE = NC (EN = ‘1’) GATE = 300 pF IDD(on) Quiescent VDD Supply Current (EN = ‘0’) IDDQ(off) — — 2 μA High-level Logic Input Current IIH — — 1 μA VIH = VLL Low-level Logic Input Current IIL — — –1 μA VIL = 0V 10.2 — 12.3 Gate Driver Output Voltage VLL = 4.5V GATE = NC VLL = 2.7V GATE = NC Linear Regulator Output Voltage DS20005689B-page 4 GATE VLL(LDO) V 5 — 6.9 3 — 3.6 V  2017-2019 Microchip Technology Inc. HV9150 AC ELECTRICAL CHARACTERISTICS Electrical Specifications: Over recommended operating supply voltages and temperatures; unless otherwise noted TJ = 25°C. Parameter Sym. Min. Typ. Max. Unit 1.22 1.25 1.28 1.2 1.25 1.3 — — 1 μA 0 — VLL–1.4 V 0 — 0.12 V 0.5 — VLL–1.4 V — — 500 Ω — — 13.5 V Conditions FEEDBACK (FB) Internal Feedback Reference Voltage Accuracy VREF Range Input Bias Current IBIAS Range External Reference Voltage Trigger INT Reference EXT_REF Trigger EXT Reference On-resistance, RDS Breakdown Voltage, BV FB_RTN V TA = –25 to 85°C EXT_REF is selected. During EN positive triggering IO= 2 mA GATE DRIVER OUTPUT (GATE) Rise Time tr — — 36 ns Fall Time tf — — 12 ns — — 45 — — 30 — — 15 — — 12 — ½ fOSC — Pull-up Resistance VDD = 5V Pull-down Resistance VDD = 5V RUP VDD = 12V RDOWN VDD = 12V Oscillator Frequency fGATE Ω Ω CL = 300 pF, VDD = 12V IO = 20 mA IO = 50 mA IO = 20 mA IO = 50 mA kHz CHARGE PUMP CONVERTER Charge Pump Output Voltage Oscillator Frequency VDD Accuracy fOSC Range Oscillator Frequency Tolerance ∆f Accuracy Duty Cycle 12.6 170 195 220 40 — 400 V kHz RFREQ = 270 kΩ, VLL= 3.3V Over RFREQ range — 15 — % 50 kHz ≤ fOSC ≤ 250 kHz 86 87.5 90 % RFREQ = 270 kΩ — 0 — % 0 < VCNTL ≤ 0.18 VLL 50 — % 0.22 VLL < VCNTL ≤ 0.38 VLL — 62.5 — % 0.42 VLL < VCNTL ≤ 0.58 VLL — 75 — % 0.62 VLL < VCNTL ≤ 0.78 VLL — 87.5 — % 0.82 VLL < VCNTL ≤ VLL VCONTROL 0 — VLL V See Table 4-2. RFREQ 120k — 1.2M Ω — — 20 — — 20 Frequency Adjustment Resistor Maximum Charge Pump Output Resistance 3 VLL–1.8 — DC Range Duty Cycle Adjustment 5 2.7V ≤ VLL ≤ 4.5V CCP1 = 220 nF CCP2 = 220 nF CCP3 = 220 nF Pull-up Pull-down  2017-2019 Microchip Technology Inc. RCP Ω VLL = 2.7V, IO = 10 mA DS20005689B-page 5 HV9150 AC ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical Specifications: Over recommended operating supply voltages and temperatures; unless otherwise noted TJ = 25°C. Parameter Sym. Output Ripple at VDD Min. Typ. Max. Unit Conditions VRIPPLE — — 100 mV 2.7V ≤ VLL ≤ 4.5V fOSC = 200 kHz CCP1 = 220 nF CCP2 = 220 nF CCP3 = 220 nF CGATE = 300 pF BW = 20 MHz tDELAY — 240 — ms CT = 1 μF DELAY TIMER Shutdown Delay Timer TEMPERATURE SPECIFICATIONS Parameter Sym. Min. Typ. Max. Unit Operating Ambient Temperature TA –25 — +125 °C Storage Temperature TS –65 — +150 °C — 33 — °C/W Conditions TEMPERATURE RANGE PACKAGE THERMAL RESISTANCE JA 16-lead QFN 100 87.5% Duty Cycle 87.5% Duty Cycle 90 82% 80 78% Percentage of VLL 60 62% 58% 62.5% Duty Cycle 62.5% Duty Cycle 50 40 75% Duty Cycle 75% Duty Cycle 70 42% 38% 50% Duty Cycle 50% Duty Cycle 30 22% 20 10 0 FIGURE 1-1: DS20005689B-page 6 18% 0% Duty Cycle 0% Duty Cycle VCONTROL from Max to Min VCONTROL from Min to Max Duty Cycle Selection Hysteresis at VCONTROL Pin at 25°C.  2017-2019 Microchip Technology Inc. HV9150 Timing Waveforms XQWV"*GZVaTGH+ XQWV"*KPVaTGH+ XQWV 2X XKJ GP XKN Initial power up FIGURE 1-2: Enabling to use the External Voltage Reference. XQWV 2X tDELAY HDaTVP 2X XKJ GP FIGURE 1-3: XKN Delay Time at FB_RTN. VIN = 4.5V VIN = 2.7V FIGURE 1-4: VCP Noise.  2017-2019 Microchip Technology Inc. DS20005689B-page 7 HV9150 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g. outside specified power supply range) and therefore outside the warranted range. 35 12.0 Charge Pump Output Voltage VDD (V) 30 Rise time tr, VDD = 5V (LDO mode) 25 11.0 CL = 100 pF CL = 220 pF CL = 330 pF 10.0 Rise time tr, VDD = 11V (CP mode) Time (ns) 20 15 Fall time tf, VDD = 5V (LDO mode) 10 Fall time tf, VDD = 11V (CP mode) 5 0 9.0 8.0 7.0 6.0 0 50 100 150 200 250 300 350 2.5 3.0 3.5 Load Capacitance (pF) 4.5 5.0 FIGURE 2-4: Charge Pump Output Voltage vs. Input Voltage at 25°C. FIGURE 2-1: Gate Driver Rise Time (tr) and Fall Time (tf) vs. Load Capacitance at 25°C. (VIN = 3.3V at 25OC) 1000 4.0 Input Voltage VLL (V) (fGATE = 100 kHz, CCP1 = CCP2 = 0.22 µF, CVDD = 1.0 µF) 12 VLL = 4.5V Output Voltage VDD (V) Frequency (kHz) 11 100 10 9 VLL = 3.6V 8 VLL = 3.3V 7 6 10 10 100 1000 5 RFREQ (kΩ) 0 50 100 150 200 250 300 350 Load Capacitance (pF) fGATE vs. RFREQ. FIGURE 2-2: VLL = 2.7V FIGURE 2-5: Charge Pump Output Voltage vs. Load Capacitance at 25°C. (Gate output load capacitance = 330 pF, RFREQ = 255 kΩ @ 25OC) 100 101 CP mode Frequency (kHz) Capacitance (µF) 100 10 1 99 LDO mode 98 97 96 0.1 10 100 1000 Delay (ms) FIGURE 2-3: CT Capacitor Value vs. Delay Time at 25°C. DS20005689B-page 8 10000 2 3 4 5 6 7 8 9 10 11 12 13 14 VLL Input Voltage (V) FIGURE 2-6: Gate Driver Switching Frequency vs. VLL Input Voltage.  2017-2019 Microchip Technology Inc. HV9150 3.0 PIN DESCRIPTION The details of the pins of HV9150 16-lead QFN are listed in Table 3-1. Refer to Package Type for the pin locations. TABLE 3-1: PIN FUNCTION TABLE Pin Number Pin Name 1 VLL Input supply voltage 2 GND Ground connection 3 EN 4 CP_EN 5 VCONTROL Duty cycle adjustment voltage control input 6 FREQ_ADJ Frequency adjustment 7 EXT_REF 8 CT Timing capacitor 9 FB Feedback input voltage 10 FB_RTN 11 GATE Gate control output 12 VDD Charge pump output voltage 13 CCP2+ Charge pump storage capacitor #2 plus terminal 14 CCP2– Charge pump storage capacitor #2 minus terminal 15 CCP1+ Charge pump storage capacitor #1 plus terminal 16 CCP1– Charge pump storage capacitor #1 minus terminal Center Pad Description Enable Charge pump/LDO enable input External reference voltage input Feedback return Substrate connection (at ground potential)  2017-2019 Microchip Technology Inc. DS20005689B-page 9 HV9150 4.0 FUNCTIONAL DESCRIPTION Follow the steps in Table 4-1 to power up and power down the HV9150. TABLE 4-1: POWER-UP AND POWER-DOWN SEQUENCE Power-up Step 1 2 3 Power-down Description Step Connect ground. Apply VIN. Set all inputs to a known state. 4.1 1 2 3 Hysteretic Mode Controller 4.2 A Hysteretic mode controller consists of an oscillator, a voltage reference, a comparator and a driver. Both the internal oscillator and the duty cycle of the gate driver are running at a fixed rate. As this device is designed for a step-up conversion, a pulse train is used to control the switch of a classical switching boost converter. The pulse train is gated by the output of the comparator, which compares the feedback of the output voltage with the voltage reference. If the output voltage reaches the target voltage, the comparator will turn off the pulse train. When the output voltage drops below the target voltage, the comparator will pass the pulse train to the switch and start the inductor charging cycle. The advantage of this Hysteretic mode controller is its stability and simple operation. The diagram in Figure 4-1 shows a Hysteretic Mode controller and a classical boost converter. XKP XQWV J{uvgtgvke"Oqfg Eqpvtqnngt FIGURE 4-1: A Hysteretic Mode Controller and a Classical Boost Converter. DS20005689B-page 10 Description Remove all inputs. Remove VIN. Disconnect ground. Internal Oscillator This device has an internal oscillator which generates the reference clock for the Hysteretic mode controller. The controller is running at half of the frequency of the internal oscillator. This oscillator is powered by the VLL power supply pin. The frequency of the oscillator is set by the external resistor RFREQ, and this frequency is inversely proportional to the value of RFREQ. Its characteristic is shown in Figure 2-2, fGATE vs. RFREQ diagram, where fGATE = 1/2 fOSC. See Equation 4-1. EQUATION 4-1: 1 f OSC = ----------------------------------4  R FREQ  C Where: C = 4.75 pF 4.3 Voltage Reference (VREF) The voltage reference is used by the comparator to compare it with the feedback voltage and the boost converter output. This device provides the options of using either its internal voltage reference or an external voltage reference. The internal voltage reference provides a stable 1.25V with a tolerance of ±2.5%. With the use of ±1% tolerance feedback resistors, the output can be achieved with a tolerance of ±4.5%. In order to use the internal voltage reference, the EXT_REF pin must be connected to ground. If the output voltage of the boost converter is required to have high precision and tight tolerance, the external voltage reference can be used to achieve that purpose. The external reference voltage must be between 0.5V and VLL–1.4V and connected to the EXT_REF pin. A single low-to-high transition must be presented at the EN pin to trigger the device to select an external voltage reference. If no enable control signal is available in the application, this signal can be easily mimicked by a simple RC circuit. See Figure 4-2.  2017-2019 Microchip Technology Inc. HV9150 4.6 VIN EXT_REF GND EXT_REF Internal FIGURE 4-2: Reference. 4.4 Voltage Reference GND External Voltage Connection Gate Driver (Gate) The MOSFET gate driver of this controller is especially designed to drive the gate of the external MOSFET up to 12V. A high pulse voltage will help minimize the on-resistance of the external MOSFET transistor. A lower on-resistance improves the overall efficiency and heat dissipation. This gate driver is powered by the supply voltage VDD which can be generated by either the internal charge pump converter (CP mode) or the external power supply (LDO mode), depending on the available voltage supply rail of the application. See Typical Application Circuits. 4.5 Charge Pump Converter (CP Mode) A 3X charge pump converter is integrated into this device to provide a 5V to 12V rail for the gate driver. (See Figure 4-3.) It can be activated by setting CP_EN to ground. A 3.3V supply is more common and easily available for digital logic systems. However, this voltage level is less desirable for driving a high-voltage MOSFET to obtain a lower on-resistance, which improves efficiency. To reduce the number of supply rails used in the system, an internal two-stage charge pump converter is added, which can boost the 3.3V supply voltage to 8V. Compared to a 3.3V gate driver, an 8V gate driver output will substantially improve the on-resistance of the external MOSFET. The charge pump input can operate with an input voltage from 2.7V to 4.5V. Its input and output are connected to the VLL and VDD pins, respectively. XNN XFF Linear Regulator (LDO Mode) In some applications, efficiency may be a key factor, and higher voltage rails such as 5V, 6V, 9V or 12V may be available in the system. The internal charge pump converter cannot operate with these voltage levels because of the maximum output voltage limit of the charge pump converter. At the same time, these voltage levels are high enough to provide adequate supply for the gate driver. Under this circumstance, an internal linear regulator is used to replace the charge pump converter. This linear regulator input can accept voltage from 5V to 12V and generate a 3.3V output to supply the internal circuit. This linear regulator can be activated by setting CP_EN to VLL. In a scenario when the device is operating in LDO mode and in Shutdown state (EN = ‘0’), the voltage at VLL is undefined. To wake up the controller device, a voltage above 2.7V has to be presented at the enable pin (EN). 4.7 FB Ground Return Switch (FB_RTN) Any DC/DC controller requires feedback from the output to monitor its operation so that it can regulate its output accordingly. A simple resistor network is used in conjunction with a feedback ground switch as a feedback path. The purpose of this feedback ground switch is to save power consumed by the feedback resistor network when the controller is disabled. This function is quite useful for power saving, especially for battery-operated applications. 4.8 Shutdown Timer and Timing Capacitor (CT) A shutdown timer is also integrated into the controller for safety purposes. When the controller shuts down from its normal operation, the converter’s initial output is still at its high level. If the feedback ground return switch is disabled at the same time, a current path is created from the output via the feedback resistor and the internal protection clamping diode at the FB pin. (See Figure 4-4.) Depending upon the value of the FB resistor, this momentarily conducting current can be high enough to damage this clamping diode. To avoid this potential problem, a timer is added to the disable function to keep the feedback ground switch to on position for a short period of time. This on-time duration is controlled by an external capacitor CT. The larger the capacitor value is, the longer the on-time is. Its characteristic is shown in Figure 2-3. QUE FIGURE 4-3: Converter. A 3X Charge Pump  2017-2019 Microchip Technology Inc. DS20005689B-page 11 HV9150 4.10 VOUT R2 FB Internal Protection Diode R1 FB_RTN 0V/3.3V EN Delay CT Duty Cycle Control (VCONTROL) The input voltage at the VCONTROL pin manages the duty cycle of the internal oscillator output to the gate driver. All internal comparators are powered by the VLL supply and all their input threshold voltages are referenced to VLL voltage. A voltage divider formed by the two external resistors shown in Figure 4-6 can be adjusted accordingly to select the desired duty cycle of the pulse signal to the gate driver. See Table 4-2. GND TABLE 4-2: FIGURE 4-4: FB Pin. 4.9 VCONTROL Internal Protection Diode at The controller enable pin (EN), serves two main purposes. The most obvious function is to turn on and off the controller, and the other function is to act as a trigger to activate the device to accept external voltage reference. For any applications requiring a highly precise voltage reference, an external voltage reference should be used. To activate the device to accept the external voltage reference, a low-to-high transition has to appear at the EN pin while the voltage at the EXT_REF pin is above 0.5V. 0.22 VLL to 0.38 VLL 50% 62.5% 0.62 VLL to 0.78 VLL 87.5% VLL VLL VCONTROL EN + - Duty Cycle 87.5% + - Duty Cycle 75.0% + - Duty Cycle 62.5% + - Duty Cycle 50.0% GND Simple RC Circuit for EN FIGURE 4-6: DS20005689B-page 12 75% 0.82 VLL to 1 VLL R C 0% 0.42 VLL to 0.58 VLL If the system lacks enable function control, an RC circuit can be used to mimic this function to allow the external voltage reference. Refer to Figure 4-5. FIGURE 4-5: Pin. Duty Cycle 0 VLL to 0.18 VLL Hysteretic Controller Enable 3.3V (min) DUTY CYCLE SELECTION Duty Cycle Control Circuit.  2017-2019 Microchip Technology Inc. HV9150 4.11 Design Procedure There are several parameters that a user needs to consider for the DC/DC converter design. The input voltage, output voltage and output power requirement are usually defined at the beginning. The other parameters that may be included are: operating frequency, inductor value, duty cycle and the on-resistance of the MOSFET. There is some degree of flexibility in deciding the values of these parameters. The following provides the user a general design approach: 4.11.1 STEP 1 Since this DC/DC controller device is operating in a Discontinuous Conduction mode, determine the inductance and the switching frequency with Equation 4-2. EQUATION 4-2: Given: D = Duty cycle R = Load resistance of the high voltage output Vi = Minimum input voltage Vo = Output voltage Unknown: L = Inductance fGATE = Driver switching frequency Where: 2 Vi  4D  V o = -----   1 + 1 + ---------- 2  K  2  L  f GATE K = -------------------------------R The maximum duty cycle can be computed with Equation 4-3. EQUATION 4-3: V D MAX = 1 – ------i Vo 4.11.2 STEP 2 The standard inductor is usually sold in an incremental inductance value, for example, 10 µH, 22 µH, 33 µH or 47 µH. The user can choose the inductance based on the size of the inductor, the peak current, the maximum operating frequency and the DC resistance. After the value of L is decided, the gate driver switching frequency can be computed. The required RFREQ resistance can be found in the fGATE vs. RFREQ diagram. (See Figure 2-2.) Next, the user may check the peak current of the inductor with Equation 4-4. The saturation current of the inductor must be larger than IPEAK. EQUATION 4-4: Vi  D I PEAK = ----------------------L  f GATE 4.11.3 STEP 3 The most important factors in determining the MOSFET are the breakdown voltage, the current capability, the on-resistance, the minimum VGS threshold voltage and the input capacitance. The HV9150 gate driver is designed to drive a maximum of 300 pF capacitive load. Therefore, the maximum input capacitance of the external MOSFET should be less than 300 pF. The minimum breakdown voltage must be larger than the required DC/DC converter output voltage. If the breakdown voltage is too low, the output will never reach the required voltage output. A MOSFET with high on-resistance will limit the peak current charging the inductor. The user can use a simple RL charging circuit equation to determine its final charging current. See Equation 4-5. EQUATION 4-5: R ON Vi D I L = ---------- 1 – exp  – --------------  ----------  R ON L f GATE It is recommended that the calculated value of IL is within 95% of the IPEAK calculated in Equation 4-4. An on-resistance of less than 1Ω is usually a good starting point. If the final circuit is short on the output current capability, the user can do any or all of the following to boost the output: Then, the user can select any duty cycle less than DMAX. Choosing the largest possible setting is highly recommended. 1. Increase the duty cycle. 2. Decrease the fGATE. 3. Use a MOSFET with lower on-resistance. To compensate for the limited efficiency, the user can add the efficiency factor into the load resistance R. With the above equation, the product of L and fGATE is determined. The product will also limit the design.  2017-2019 Microchip Technology Inc. DS20005689B-page 13 HV9150 NOTES: DS20005689B-page 14  2017-2019 Microchip Technology Inc. HV9150 5.0 PACKAGE MARKING INFORMATION 5.1 Packaging Information 16-lead QFN XXXXX XYWW NNN Legend: XX...X Y YY WW NNN e3 * Note: Example H15 0724 485 Product Code or Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC® designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for product code or customer-specific information. Package may or not include the corporate logo.  2017-2019 Microchip Technology Inc. DS20005689B-page 15 HV9150 Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging. DS20005689B-page 16  2017-2019 Microchip Technology Inc. HV9150 APPENDIX A: REVISION HISTORY Revision B (March 2019) • Updated AC Electrical Characteristics table. Revision A (February 2017) • Converted Supertex Doc# DSFP-HV9150 to Microchip DS20005689B • Changed the quantity of the 16-lead QFN K6 package from 3000/Reel to 3300/Reel • Made minor text changes throughout the document  2017-2019 Microchip Technology Inc. DS20005689B-page 17 HV9150 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office. PART NO. Device XX - Package Options X - Environmental X Media Type Device: HV9150 = High-Voltage Output Hysteretic-Mode Step-Up DC/DC Controller Package: K6 = 16-lead VQFN Environmental: G = Lead (Pb)-free/RoHS-compliant Package Media Type: (blank) = 3300/Reel for a K6 Package DS20005689B-page 18 Example: a) HV9150K6-G: High-Voltage Output HystereticMode Step-Up DC/DC Controller, 16-lead VQFN Package, 3300/Reel  2017-2019 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 ==  2017-2019 Microchip Technology Inc. Trademarks The Microchip name and logo, the Microchip logo, AnyRate, AVR, AVR logo, AVR Freaks, BitCloud, chipKIT, chipKIT logo, CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KeeLoq, Kleer, LANCheck, LINK MD, maXStylus, maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB, OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip Designer, QTouch, SAM-BA, SpyNIC, SST, SST Logo, SuperFlash, tinyAVR, UNI/O, and XMEGA are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. ClockWorks, The Embedded Control Solutions Company, EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS, mTouch, Precision Edge, and Quiet-Wire are registered trademarks of Microchip Technology Incorporated in the U.S.A. Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom, CodeGuard, CryptoAuthentication, CryptoAutomotive, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial Programming, ICSP, INICnet, Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, memBrain, Mindi, MiWi, motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PowerSmart, PureSilicon, QMatrix, REAL ICE, Ripple Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI, SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2019, Microchip Technology Incorporated, All Rights Reserved. ISBN: 978-1-5224-4311-7 DS20005689B-page 19 Worldwide Sales and Service AMERICAS ASIA/PACIFIC ASIA/PACIFIC EUROPE Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: http://www.microchip.com/ support Web Address: www.microchip.com Australia - Sydney Tel: 61-2-9868-6733 India - Bangalore Tel: 91-80-3090-4444 China - Beijing Tel: 86-10-8569-7000 India - New Delhi Tel: 91-11-4160-8631 Austria - Wels Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 China - Chengdu Tel: 86-28-8665-5511 India - Pune Tel: 91-20-4121-0141 Denmark - Copenhagen Tel: 45-4450-2828 Fax: 45-4485-2829 China - Chongqing Tel: 86-23-8980-9588 Japan - Osaka Tel: 81-6-6152-7160 Finland - Espoo Tel: 358-9-4520-820 China - Dongguan Tel: 86-769-8702-9880 Japan - Tokyo Tel: 81-3-6880- 3770 China - Guangzhou Tel: 86-20-8755-8029 Korea - Daegu Tel: 82-53-744-4301 France - Paris Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 China - Hangzhou Tel: 86-571-8792-8115 Korea - Seoul Tel: 82-2-554-7200 China - Hong Kong SAR Tel: 852-2943-5100 Malaysia - Kuala Lumpur Tel: 60-3-7651-7906 China - Nanjing Tel: 86-25-8473-2460 Malaysia - Penang Tel: 60-4-227-8870 China - Qingdao Tel: 86-532-8502-7355 Philippines - Manila Tel: 63-2-634-9065 China - Shanghai Tel: 86-21-3326-8000 Singapore Tel: 65-6334-8870 China - Shenyang Tel: 86-24-2334-2829 Taiwan - Hsin Chu Tel: 886-3-577-8366 China - Shenzhen Tel: 86-755-8864-2200 Taiwan - Kaohsiung Tel: 886-7-213-7830 Israel - Ra’anana Tel: 972-9-744-7705 China - Suzhou Tel: 86-186-6233-1526 Taiwan - Taipei Tel: 886-2-2508-8600 China - Wuhan Tel: 86-27-5980-5300 Thailand - Bangkok Tel: 66-2-694-1351 Italy - Milan Tel: 39-0331-742611 Fax: 39-0331-466781 China - Xian Tel: 86-29-8833-7252 Vietnam - Ho Chi Minh Tel: 84-28-5448-2100 Atlanta Duluth, GA Tel: 678-957-9614 Fax: 678-957-1455 Austin, TX Tel: 512-257-3370 Boston Westborough, MA Tel: 774-760-0087 Fax: 774-760-0088 Chicago Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 Dallas Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 Detroit Novi, MI Tel: 248-848-4000 Houston, TX Tel: 281-894-5983 Indianapolis Noblesville, IN Tel: 317-773-8323 Fax: 317-773-5453 Tel: 317-536-2380 Los Angeles Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 Tel: 951-273-7800 Raleigh, NC Tel: 919-844-7510 New York, NY Tel: 631-435-6000 San Jose, CA Tel: 408-735-9110 Tel: 408-436-4270 Canada - Toronto Tel: 905-695-1980 Fax: 905-695-2078 DS20005689B-page 20 China - Xiamen Tel: 86-592-2388138 China - Zhuhai Tel: 86-756-3210040 Germany - Garching Tel: 49-8931-9700 Germany - Haan Tel: 49-2129-3766400 Germany - Heilbronn Tel: 49-7131-67-3636 Germany - Karlsruhe Tel: 49-721-625370 Germany - Munich Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 Germany - Rosenheim Tel: 49-8031-354-560 Italy - Padova Tel: 39-049-7625286 Netherlands - Drunen Tel: 31-416-690399 Fax: 31-416-690340 Norway - Trondheim Tel: 47-7288-4388 Poland - Warsaw Tel: 48-22-3325737 Romania - Bucharest Tel: 40-21-407-87-50 Spain - Madrid Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 Sweden - Gothenberg Tel: 46-31-704-60-40 Sweden - Stockholm Tel: 46-8-5090-4654 UK - Wokingham Tel: 44-118-921-5800 Fax: 44-118-921-5820  2019 Microchip Technology Inc. 08/15/18