JAN1N5532D-1

厂商：
ACTEL(微芯科技)
封装：
DO-35(DO-204AH)
描述：
DIODE ZENER 12V 500MW DO35

数据手册：

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详情介绍
数据手册
价格&库存

JAN1N5532D-1 数据手册

1N5518B thru 1N5546B-1 Available on commercial versions Qualified Levels: JAN, JANTX and JANTXV Low Voltage Avalanche 500 mW Zener Diodes DO-35 Qualified per MIL-PRF-19500/437 DESCRIPTION The 1N5518 thru 1N5546 series of 0.5 watt axial-leaded glass Zener Voltage Regulators provides a selection from 3.3 to 33 volts with tolerances ranging from plus/minus 1% to 20%. The standard tolerance is plus/minus 5% with the B suffix unless ordered otherwise. These axial-leaded glass DO-35 Zeners are also available with an internal metallurgical bond option. This type of bonded Zener package construction is also available in JAN, JANTX, and JANTXV military qualifications. Microsemi also offers numerous other Zener products to meet higher and lower power applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • • • • • JEDEC registered 1N5518 thru 1N5546. Voltage tolerances of plus/minus 20%, 10%, 5%, 2%, and 1% available. See Note 1 on page 3. Internal metallurgical bond option available with “-1” suffix. JAN, JANTX, and JANTXV qualification per MIL-PRF-19500/437 available (requires metallurgical bond option as well as plus/minus 5% voltage tolerance or tighter with B-1, C-1 or D-1 suffix). RoHS compliant versions available (commercial grade only). DO-35 (DO-204AH) Package Also available in: DO-213AA MELF (surface mount) 1N5518BUR-1 thru 1N5546BUR-1 APPLICATIONS / BENEFITS • • • • • • • Regulates voltage over a broad operating current and temperature range. Guaranteed voltage regulation (∆V Z ) from I ZL to I ZT . Voltage selection from 3.3 to 33 V. Flexible axial-lead mounting terminals. Nonsensitive to ESD per MIL-STD-750 Method 1020. Minimal capacitance (see Figure 3). Inherently radiation hard as described in Microsemi “MicroNote 050” which is available at Microsemi.com. MAXIMUM RATINGS Parameters/Test Conditions Junction and Storage Temperature (Note 1) Steady-State Power Symbol Value T J and T STG PD -65 to +175 0.5 R ӨJL R ӨJA VF T SP 250 300 1.1 260 Unit o C W (Also see derating in Figure 2) (Note 2) Thermal Resistance Junction-to-Lead (Note 3) Thermal Resistance Junction-to-Ambient Forward Voltage @ 200 mA Solder Pad Temperature @ 10 s o o C/W C/W V o C Notes: 1. At T L < 50 oC 3/8 inch (10 mm) from body or 0.48 W at T A < 25 ºC when mounted on FR4 PC board as described for thermal resistance above. 2. At 3/8 (10 mm) lead length from body. 3. When mounted on FR4 PC board (1 oz Cu) with 4 mm2 copper pads and track width 1 mm, length 25 mm. T4-LDS-0037-1, Rev 1 (111456) ©2011 Microsemi Corporation MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 5 1N5518B thru 1N5546B-1 MECHANICAL and PACKAGING • • • • • • • CASE: Hermetically sealed axial-lead glass DO-35 (DO-204AH) package. TERMINALS: Leads, tin-lead plated solderable per MIL-STD-750, method 2026. RoHS compliant matte-Tin available for commercial only. POLARITY: Cathode indicated by band where diode is to be operated with the banded end positive with respect to the opposite end for Zener regulation. MARKING: Part number. TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number). Consult factory for quantities. WEIGHT: 0.2 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N5518 B -1 (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant Metallurgical Bond -1 = Metallurgical bond blank = Standard bond JEDEC type number (see Electrical Characteristic table) Zener Voltage Tolerance A = 10% B = 5% C = 2% D = 1% Blank = 20% SYMBOLS & DEFINITIONS Symbol IR I Z , I ZT , I ZK I ZL I ZM VZ ∆V Z Z ZT or Z ZK Definition Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. Regulator Current: The dc regulator current (I Z ), at a specified test point (I ZT ), near breakdown knee (I ZK ). Low Regulator (Zener) Current: The lowest rated dc current for the specified power rating. Maximum Regulator (Zener) Current: The maximum rated dc current for the specified power rating. Zener Voltage: The zener voltage the device will exhibit at a specified current (I Z ) in its breakdown region. Voltage Regulation: The change in zener voltage between two specified currents or percentage of I ZM . Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a specified rms current modulation (typically 10% of I ZT or I ZK ) and superimposed on I ZT or I ZK respectively. T4-LDS-0037-1, Rev 1 (111456) ©2011 Microsemi Corporation Page 2 of 5 1N5518B thru 1N5546B-1 ELECTRICAL CHARACTERISTICS (T A = 25oC unless otherwise noted. Based on DC measurements at thermal equilibrium; V F = 1.1 Max @ IF = 200 mA for all types.) JEDEC TYPE NUMBER (Note 1) NOMINAL ZENER VOLTAGE TEST CURRENT I ZT MAX. ZENER IMPEDANCE B-C-D SUFFIX V Z @ I ZT Z ZT @ I ZT (Note 2) (Note 3) MAX. REVERSE LEAKAGE CURRENT (Note 4) IR V R – Volts B-C-D SUFFIX MAXIMUM DC ZENER CURRENT B-C-D SUFFIX MAX. NOISE DENSITY AT I Z = 250µA REGULATION FACTOR LOW V Z CURRENT ∆V Z I ZL (Note 6) (Note 6) ND I ZM Volts 1N5518 1N5519 1N5520 1N5521 1N5522 1N5523 1N5524 1N5525 1N5526 1N5527 1N5528 1N5529 1N5530 1N5531 1N5532 1N5533 1N5534 1N5535 1N5536 1N5537 1N5538 1N5539 1N5540 1N5541 1N5542 1N5543 1N5544 1N5545 1N5546 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 22.0 24.0 25.0 28.0 30.0 33.0 mA 20 20 20 20 10 5.0 3.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Ohms µA NON & ASUFFIX B-C-D SUFFIX (Note 5) mAdc µV/ √Hz Volts mA 26 24 22 18 22 26 30 30 30 35 40 45 60 80 90 90 100 100 100 100 100 100 100 100 100 100 100 100 100 5.0 3.0 1.0 3.0 2.0 2.0 2.0 1.0 1.0 0.5 0.5 0.1 0.05 0.05 0.05 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.90 0.90 0.90 1.0 1.5 2.0 3.0 4.5 5.5 6.0 6.5 7.0 8.0 9.0 9.5 10.5 11.5 12.5 13.0 14.0 15.0 16.0 17.0 18.0 20.0 21.0 23.0 24.0 28.0 1.0 1.0 1.0 1.5 2.0 2.5 3.5 5.0 6.2 6.8 7.5 8.2 9.1 9.9 10.8 11.7 12.6 13.5 14.4 15.3 16.2 17.1 18.0 19.8 21.6 22.4 25.2 27.0 29.7 115 105 98 88 81 75 68 61 56 51 46 42 38 35 32 29 27 25 24 22 21 20 19 17 16 15 14 13 12 0.5 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 2.0 4.0 4.0 4.0 5.0 10 15 20 20 20 20 20 20 20 25 30 35 40 45 50 0.90 0.90 0.85 0.75 0.60 0.65 0.30 0.20 0.10 0.05 0.05 0.05 0.10 0.20 0.20 0.20 0.20 0.20 0.20 0.20 0.20 0.20 0.20 0.25 0.30 0.35 0.40 0.45 0.50 2.0 2.0 2.0 2.0 1.0 0.25 0.25 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 NOTES: 1. TOLERANCE AND VOLTAGE DESIGNATION – The JEDEC type numbers shown are +/-20% with guaranteed limits for only V Z , I R , and V F . Units with A suffix are +/-10% with guaranteed limits for V Z , I R , and V F . Units with guaranteed limits for all six parameters are indicated by a B suffix for +/-5.0% units, C suffix for +/-2.0% and D suffix for +/-1.0%. 2. ZENER VOLTAGE (V Z ) MEASUREMENT – Nominal zener voltage is measured with the device junction in thermal equilibrium with ambient temperature of 25 oC. 3. ZENER IMPEDANCE (Z Z ) MEASUREMENT – The zener impedance is derived from the 60 Hz ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current (I ZT ) is superimposed on I ZT . 4. REVERSE LEAKAGE CURRENT (I R ) – Reverse leakage currents are guaranteed and are measured at V R as shown on the table. 5. MAXIMUM REGULATOR CURRENT (I ZM ) – The maximum current shown is as shown in MIL-PRF-19500/437. 6. MAXIMUM REGULATION FACTOR (∆V Z ) – ∆V Z is the maximum difference between V Z at I ZT and V Z at I ZL measured with the device junction in thermal equilibrium. T4-LDS-0037-1, Rev 1 (111456) ©2011 Microsemi Corporation Page 3 of 5 1N5518B thru 1N5546B-1 GRAPHS Rated Maximum DC Operation (mW) Noise density, (ND) is specified in microvolts rms per square-root-hertz (µV/ √Hz). Actual measurement is performed using a 1 kHz to 3 kHz frequency bandpass filter with a constant Zener test current (IZT) at 25 oC ambient temperature. FIGURE 1 Noise Density Measurement Circuit o T L – Lead Temperature ( C) 3/8” from body TYPICAL CAPACITANCE IN PICOFARADS FIGURE 2 – Temperature-Power Derating Curve At zero volts At –2 volts (VR) ZENER VOLTAGE V Z FIGURE 3 Capacitance vs. Zener Voltage (TYPICAL) T4-LDS-0037-1, Rev 1 (111456) FIGURE 4 Zener Diode Characteristics and Symbol Identification ©2011 Microsemi Corporation Page 4 of 5 1N5518B thru 1N5546B-1 PACKAGE DIMENSIONS Ltr BD BL LD LL LL 1 Inch Min .055 .120 .018 1.000 Dimensions Millimeters Max Min Max .090 1.40 2.29 .200 3.05 5.08 .022 0.46 0.56 1.500 25.40 38.10 .050 1.27 Notes 3 3 4 NOTES: 1. Dimensions are in inch. 2. Millimeters are given for general information only. 3. Package contour optional within BD and length BL. Heat slugs, if any, shall be included within this cylinder but shall not be subject to minimum limit of BD. The BL dimension shall include the entire body including slugs. 4. Within this zone lead, diameter may vary to allow for lead finishes and irregularities other than heat slugs. 5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0037-1, Rev 1 (111456) ©2011 Microsemi Corporation Page 5 of 5

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JAN1N5532D-1

物料型号：1N5518B至1N5546B-1，这是Microsemi公司生产的一系列低电压雪崩500毫瓦齐纳二极管。

器件简介：这些齐纳二极管提供从3.3到33伏的电压选择，容差范围从正负1%到20%。标准容差为正负5%，除非另有订购说明。这些二极管还提供内部冶金键合选项，并且有JAN、JANTX和JANTXV军事资格认证。

引脚分配：文档中没有明确指出具体的引脚分配图，但提到了齐纳二极管的阳极通过带状标记指示，带状端为正时相对于另一端进行齐纳调节。

参数特性：包括工作结温-65至+175摄氏度，稳态功率0.5瓦，热阻结至引脚250°C/W，热阻结至环境300°C/W，以及在200毫安下的正向电压1.1伏。

功能详解：这些齐纳二极管在宽广的工作电流和温度范围内调节电压，具有保证的电压调节能力，灵活的轴向引脚安装终端，对静电放电不敏感，具有最小的电容值，并且具有固有的辐射硬度。

应用信息：适用于电压调节，具有宽广的操作电流和温度范围，灵活的引脚安装，以及对静电放电的不敏感性。

封装信息：采用DO-35（DO-204AH）封装，还提供DO-213AA MELF（表面贴装）封装选项。

电气特性表提供了不同型号的齐纳二极管的标称齐纳电压、测试电流、最大齐纳阻抗、最大反向漏电流、最大直流齐纳电流、噪声密度和调节因子等参数。

图表部分展示了噪声密度测量电路、温度-功率降额曲线、典型电容值与齐纳电压的关系，以及齐纳二极管特性和符号识别。

封装尺寸表详细列出了封装的尺寸参数，包括最小和最大尺寸。