JAN1N5622

JAN1N5622

  • 厂商:

    ACTEL(微芯科技)

  • 封装:

    Axial

  • 描述:

    DIODE GEN PURP 1KV 1A AXIAL

  • 详情介绍
  • 数据手册
  • 价格&库存
JAN1N5622 数据手册
1N5614 thru 1N5622 VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “standard recovery” rectifier diode series is military qualified to MIL-PRF19500/427 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidlessglass construction using an internal “Category I” metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a “US” suffix (see separate data sheet for 1N5614US thru 1N5622US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages. “A” Package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES • • • • • • • APPLICATIONS / BENEFITS Popular JEDEC registered 1N5614 to 1N5622 series Voidless hermetically sealed glass package Triple-Layer Passivation Internal “Category I” Metallurgical bonds Working Peak Reverse Voltage 200 to 1000 Volts. JAN, JANTX, JANTXV, and JANS available per MILPRF-19500/427 Surface mount equivalents also available in a square end-cap MELF configuration with “US” suffix (see separate data sheet for 1N5614US thru 1N5622US) • • • • • • • • • • • • • • Standard recovery 1 Amp rectifiers 200 to 1000 V Military and other high-reliability applications General rectifier applications including bridges, halfbridges, catch diodes, etc. High forward surge current capability Extremely robust construction Low thermal resistance Controlled avalanche with peak reverse power capability Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS o WWW . Microsemi .C OM DESCRIPTION MECHANICAL AND PACKAGING o Junction & Storage Temperature: -65 C to +200 C Thermal Resistance: 38oC/W junction to lead at 3/8 inch (10 mm) lead length from body Thermal Impedance: 4.5oC/W @ 10 ms heating time Average Rectified Forward Current (IO): 1.0 Amps @ TA = 55ºC and 0.75 Amps @ TA = 100ºC Forward Surge Current: 30 Amps @ 8.3 ms half-sine Solder Temperatures: 260ºC for 10 s (maximum) • • • • • • CASE: Hermetically sealed voidless hard glass with Tungsten slugs (package dimensions on last page) TERMINATIONS: Axial leads are copper with Tin/Lead (Sn/Pb) finish. Note: Previous JANS inventory had solid Silver axial-leads and no finish. MARKING: Body paint and part number, etc. POLARITY: Cathode band TAPE & REEL option: Standard per EIA-296 WEIGHT: 340 mg ELECTRICAL CHARACTERISTICS 1N5614 1N5616 1N5618 1N5620 1N5622 MINIMUM BREAKDOWN VOLTAGE VBR @ 50μA VOLTS VOLTS 200 400 600 800 1000 220 440 660 880 1100 AVERAGE RECTIFIED CURRENT IO @ T A (NOTE 1) AMPS o o 55 C 100 C 1.00 .750 1.00 .750 1.00 .750 1.00 .750 1.00 .750 FORWARD VOLTAGE (MAX.) VF @ 3A REVERSE CURRENT (MAX.) IR @ VRWM μA VOLTS o 0.8 MIN. 1.3 MAX. 25 C 0.5 0.5 0.5 0.5 0.5 MAXIMUM SURGE CURRENT IFSM (NOTE 2) AMPS REVERSE RECOVERY (NOTE 3) trr 30 30 30 30 30 2.0 2.0 2.0 2.0 2.0 μs o 100 C 25 25 25 25 25 NOTE 1: From 1 Amp at TA = 55oC, derate linearly at 5.56 mA/ oC to 0.75 Amp at TA = 100oC. From TA = 100oC, derate linearly at 7.5 mA/oC to 0 Amps at TA = 200 oC. These ambient ratings are for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175 oC. NOTE 2: TA = 100oC, f = 60 Hz, IO = 750 mA for ten 8.3 ms surges @ 1 minute intervals NOTE 3: IF = 0.5A, IRM = 1A, IR(REC) = 0.250A Copyright © 2007 1-15-2007 REV C Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 1N5614 – 1N5622 TYPE WORKING PEAK REVERSE VOLTAGE VRWM 1N5614 thru 1N5622 VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION VBR VRWM IO VF IR C trr Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range Average Rectified Output Current: Output Current averaged over a full cycle with a 50 hZ or 60 Hz sine-wave input and a 180 degree conduction angle Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. WWW . Microsemi .C OM Symbol SYMBOLS & DEFINITIONS Definition GRAPHS Copyright © 2007 1-15-2007 REV C 1N5614 – 1N5622 FIGURE 1 TYPICAL FORWARD VOLTAGE vs FORWARD CURRENT FIGURE 2 TYPICAL REVERSE CURRENT vs PIV Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2 1N5614 thru 1N5622 SCOTTSDALE DIVISION VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS WWW . Microsemi .C OM FIGURE 3 MAXIMUM POWER DISSIPATION vs LEAD TEMPERATURE FIGURE 4 MAXIMUM CURRENT vs LEAD TEMPERATURE PACKAGE DIMENSIONS 1N5614 – 1N5622 Dimensions: Inches/[mm] NOTE: Lead tolerance = +0.003/-0.004 inches Copyright © 2007 1-15-2007 REV C Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 3
JAN1N5622
物料型号:1N5614至1N5622系列

器件简介:这些整流二极管是军用级别,符合MIL-PRF19500/427标准,适用于高可靠性应用,工作峰值反向电压从200到1000伏特。它们采用无空洞玻璃封装,内部有“类别I”的冶金键合。

引脚分配:文档中没有明确说明引脚分配,但通常整流二极管有一个阳极和一个阴极。

参数特性: - 工作峰值反向电压:200至1000伏特 - 最小击穿电压:220至1100伏特 - 平均整流电流:在55°C时为1.00安培,100°C时为0.75安培 - 最大正向电压:在3安培时为0.8至1.3伏特 - 最大反向电流:在工作峰值反向电压下为0.5微安 - 最大浪涌电流:30安培

功能详解:这些二极管适用于标准恢复1安培整流,200至1000伏特,适用于军事和其他高可靠性应用,包括整流桥、半桥、捕获二极管等。它们具有高正向浪涌电流能力、极其坚固的结构、低热阻和控制的雪崩能力。

应用信息:适用于军事和高可靠性应用,以及一般的整流应用。

封装信息:采用无空洞硬质玻璃封装,带有钨塞。轴向引线为铜质,表面镀锡/铅(Sn/Pb)。标记包括体漆和零件号码等。极性带有阴极带。
JAN1N5622 价格&库存

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JAN1N5622
    •  国内价格 香港价格
    • 1+50.147201+6.44000

    库存:128

    JAN1N5622

      库存:0