1N5772
Isolated Diode Array with
HiRel MQ, MX, MV, and MSP Screening Options
SCOTTSDALE DIVISION
APPEARANCE
10-PIN Ceramic
Flat Pack
WWW . Microsemi .C OM
DESCRIPTION
These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated
by a planar process and mounted in a 10-PIN package for use as steering diodes
protecting up to eight I/O ports from ESD, EFT, or surge by directing them to the positive
side of the power supply line and to ground (see figure 1). An external TVS diode may
be added between the positive supply line and ground to prevent overvoltage on the
supply rail. They may also be used in fast switching core-driver applications. This
includes computers and peripheral equipment such as magnetic cores, thin-film
memories, plated-wire memories, etc., as well as decoding or encoding applications.
These arrays offer many advantages of integrated circuits such as high-density
packaging and improved reliability. This is a result of fewer pick and place operations,
smaller footprint, smaller weight, and elimination of various discrete packages that may
not be as user friendly in PC board mounting.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
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APPLICATIONS / BENEFITS
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Hermetic Ceramic Package
Isolated Diodes To Eliminate Cross-Talk Voltages
High Breakdown Voltage VBR > 60 V at 10 µA
Low Leakage IR< 100nA at 40 V
Low Capacitance C < 8.0 pF
Options for screening in accordance with MIL-PRF19500/474 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers. For example, designate
MX1N5772 for a JANTX screen.
High Frequency Data Lines
RS-232 & RS-422 Interface Networks
Ethernet: 10 Base T
Computer I/O Ports
LAN
Switching Core Drivers
IEC 61000-4 Compatible (see circuit in figure 1)
61000-4-2 ESD : Air 15kV, contact 8kW
61000-4-4 (EFT) : 40A – 5/50 ns
61000-4-5 (surge): 12A 8/20 µs
MAXIMUM RATINGS
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MECHANICAL AND PACKAGING
Reverse Breakdown Voltage of 60 Vdc (Note 1 & 2)
Continuous Forward Current of 300 mA dc (Note 1 & 3)
Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)
400 mW Power Dissipation per Junction @ 25oC
500 mW Power Dissipation per Package @ 25oC (Note 4)
Operating Junction Temperature range –65 to +150oC
Storage Temperature range of –65 to +200oC
NOTE 1:
NOTE 2:
NOTE 3:
NOTE 4:
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10-PIN Ceramic Flat Pack
Weight 0.25 grams (approximate)
Marking: Logo, part number, date code and dot
identifying pin #1
Carrier Tubes; 19 pcs (standard)
Each Diode
Pulsed: PW = 100 ms max; duty cycle
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