JANTX1N5521BUR-1

1N5518BUR-1 thru 1N5546BUR-1 Available on commercial versions Qualified Levels: JAN, JANTX and JANTXV Low Voltage Avalanche 500 mW Zener Diodes Qualified per MIL-PRF-19500/437 DESCRIPTION The 1N5518BUR-1 thru 1N5546BUR-1 series of 0.5 watt glass surface mount Zener voltage regulators provides a selection from 3.3 to 33 volts with tolerances ranging from plus/minus 1% to 20%. The standard tolerance is plus/minus 5% with the B suffix unless ordered otherwise. These glass surface mount devices are available with an internal metallurgical bond option. This type of bonded Zener package construction is also in JAN, JANTX, and JANTXV military qualifications. Microsemi also offers numerous other Zener products to meet higher and lower power applications. DO-213AA MELF Package Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • • • • • JEDEC registered 1N5518 thru 1N5546. Voltage tolerances of plus/minus 20%, 10%, 5%, 2%, and 1% available. See Note 1 on page 3. Internal metallurgical bond. JAN, JANTX, and JANTXV qualification per MIL-PRF-19500/437 available. RoHS compliant versions available (commercial grade only). Also available in: DO-35 (DO-204AH) (axial-leaded) 1N5518B-1 thru 1N5546B-1 APPLICATIONS / BENEFITS • • • • • • Regulates voltage over a broad operating current and temperature range. Extensive selection from 3.3 to 33 V. Hermetically sealed surface mount package. Nonsensitive to ESD per MIL-STD-750 Method 1020. Minimal capacitance (see Figure 3). Inherently radiation hard as described in Microsemi’s “MicroNote 050” which is available at Microsemi.com. MAXIMUM RATINGS Parameters/Test Conditions Junction and Storage Temperature (Note 1) Steady-State Power Symbol Value T J and T STG PD -65 to +175 0.5 R ӨJEC R ӨJA Z ӨJX VF T SP 100 300 35 1.1 260 Unit o C W (Also see derating in Figure 2) (Note 2) Thermal Resistance Junction-to-End Cap (Note 2) Thermal Resistance Junction-to-Ambient Thermal Impedance Forward Voltage 200mA Solder Pad Temperature @ 10 s o C/W C/W o C/W V o C o Notes: 1. At end cap temperature T EC < 125 oC or at ambient T A < 50 ºC when mounted on FR4 PC board as described for thermal resistance above (see Figure 2 for derating). Derate to 0 at +175 oC. 2. When mounted on FR4 PC board (1 oz Cu) with recommended footprint (see last page). MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0037, Rev 2 (111456) ©2011 Microsemi Corporation Page 1 of 6 1N5518BUR-1 thru 1N5546BUR-1 MECHANICAL and PACKAGING • • • • • • • • CASE: Hermetically sealed glass DO-213AA (SOD80 or MLL34) MELF style package. TERMINALS: End caps tin-lead plated or RoHS compliant matte-Tin plating available (on commercial only) solderable per MILSTD-750, method 2026. POLARITY: Cathode indicated by band where diode is to be operated with the banded end positive with respect to the opposite end for Zener regulation. o MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) of this device is approximately +6 PPM/ C. The COE of the Mounting Surface System should be selected to provide a suitable match with this device. MARKING: cathode band only. TAPE & REEL option: Standard per EIA-481-1-A with 12 mm tape (add “TR” suffix to part number). Consult factory for quantities. WEIGHT: 0.04 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N5518 B UR -1 (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grady only) Blank = non-RoHS compliant Metallurgical Bond -1 = Metallurgical bond JEDEC type number See Electrical Characteristics table Package type UR = surface mount Zener Voltage Tolerance A = 10% B = 5% C = 2% D = 1% Blank = 20% SYMBOLS & DEFINITIONS Symbol IR I Z , I ZT , I ZK I ZL I ZM VZ ∆V Z Z ZT or Z ZK Definition Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. Regulator Current: The dc regulator current (I Z ), at a specified test point (I ZT ), near breakdown knee (I ZK ). Low Regulator (Zener) Current: The lowest rated dc current for the specified power rating. Maximum Regulator (Zener) Current: The maximum rated dc current for the specified power rating. Zener Voltage: The zener voltage the device will exhibit at a specified current (I Z ) in its breakdown region. Voltage Regulation: The change in zener voltage between two specified currents or percentage of I ZM . Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a specified rms current modulation (typically 10% of I ZT or I ZK ) and superimposed on I ZT or I ZK respectively. T4-LDS-0037, Rev 2 (111456) ©2011 Microsemi Corporation Page 2 of 6 1N5518BUR-1 thru 1N5546BUR-1 ELECTRICAL CHARACTERISTICS (T A = 25oC unless otherwise noted. Based on DC measurements at thermal equilibrium; V F = 1.1 Max @ IF = 200 mA for all types.) JEDEC TYPE NUMBER (Note 1) 1N5518BUR-1 1N5519BUR-1 1N5520BUR-1 1N5521BUR-1 1N5522BUR-1 1N5523BUR-1 1N5524BUR-1 1N5525BUR-1 1N5526BUR-1 1N5527BUR-1 1N5528BUR-1 1N5529BUR-1 1N5530BUR-1 1N5531BUR-1 1N5532BUR-1 1N5533BUR-1 1N5534BUR-1 1N5535BUR-1 1N5536BUR-1 1N5537BUR-1 1N5538BUR-1 1N5539BUR-1 1N5540BUR-1 1N5541BUR-1 1N5542BUR-1 1N5543BUR-1 1N5544BUR-1 1N5545BUR-1 1N5546BUR-1 NOMINAL ZENER VOLTAGE TEST CURRENT I ZT MAX. ZENER IMPEDANCE B-C-D SUFFIX V Z @ I ZT Z ZT @ I ZT (Note 2) (Note 3) MAX. REVERSE CURRENT (Note 4) IR V R – VOLTS Volts mA Ohms µA NON & ASUFFIX 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 22.0 24.0 25.0 28.0 30.0 33.0 20 20 20 20 10 5.0 3.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 26 24 22 18 22 26 30 30 30 35 40 45 60 80 90 90 100 100 100 100 100 100 100 100 100 100 100 100 100 5.0 3.0 1.0 3.0 2.0 2.0 2.0 1.0 1.0 0.5 0.5 0.1 0.05 0.05 0.05 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.90 0.90 0.90 1.0 1.5 2.0 3.0 4.5 5.5 6.0 6.5 7.0 8.0 9.0 9.5 10.5 11.5 12.5 13.0 14.0 15.0 16.0 17.0 18.0 20.0 21.0 23.0 24.0 28.0 B-C-D SUFFIX MAXIMUM DC ZENER CURRENT B-C-D SUFFIX MAX. NOISE DENSITY AT I Z = 250 µA REGULATION FACTOR LOW V Z CURRENT ∆V Z I ZL (Note 6) (Note 6) ND I ZM B-C-D SUFFIX (Note 5) mA µV/ √Hz Volts mA 1.0 1.0 1.0 1.5 2.0 2.5 3.5 5.0 6.2 6.8 7.5 8.2 9.1 9.9 10.8 11.7 12.6 13.5 14.4 15.3 16.2 17.1 18.0 19.8 21.6 22.4 25.2 27.0 29.7 115 105 98 88 81 75 68 61 56 51 46 42 38 35 32 29 27 25 24 22 21 20 19 17 16 15 14 13 12 0.5 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 2.0 4.0 4.0 4.0 5.0 10 15 20 20 20 20 20 20 20 25 30 35 40 45 50 0.90 0.90 0.85 0.75 0.60 0.65 0.30 0.20 0.10 0.05 0.05 0.05 0.10 0.20 0.20 0.20 0.20 0.20 0.20 0.20 0.20 0.20 0.20 0.25 0.30 0.35 0.40 0.45 0.50 2.0 2.0 2.0 2.0 1.0 0.25 0.25 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 NOTES: 1. TOLERANCE AND VOLTAGE DESIGNATION – The JEDEC type numbers without a letter prior to the UR-1 suffix are +/-20% with guaranteed limits for only V Z , I R , and V F . Units with “A” prior to the UR-1 suffix are +/-10% with guaranteed limits for V Z , I R , and V F . Units with guaranteed limits for all six parameters are indicated by a B suffix for +/-5.0% units, C suffix for +/-2.0% and D suffix for +/-1.0% prior to the UR-1 suffix. 2. ZENER VOLTAGE (V Z ) MEASUREMENT – Nominal zener voltage is measured with the device junction in thermal equilibrium with ambient temperature of 25 oC. 3. ZENER IMPEDANCE (Z Z ) MEASUREMENT – The zener impedance is derived from the 60 Hz ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current (I ZT ) is superimposed on I ZT . 4. REVERSE CURRENT (I R ) – Reverse currents are guaranteed and are measured at V R as shown on the table. 5. MAXIMUM REGULATOR CURRENT (I ZM ) – The maximum current shown is as shown in MIL-PRF-19500/437. 6. MAXIMUM REGULATION FACTOR (∆V Z ) – ∆V Z is the maximum difference between V Z at I ZT and V Z at I ZL measured with the device junction in thermal equilibrium. T4-LDS-0037, Rev 2 (111456) ©2011 Microsemi Corporation Page 3 of 6 1N5518BUR-1 thru 1N5546BUR-1 GRAPHS Pd, Rated Maximum dc Operation (mW) Noise density, (ND) is specified in microvolt-rms per square-root-hertz. Actual measurement is performed using a 1 kHz to 3 kHz frequency bandpass filter at a constant Zener test current (IZT) at 25 oC ambient temperature. o T EC , End Cap Temperature ( C) FIGURE 1 – Noise Density Measurement Circuit Typical Capacitance in Picofarads (pf) FIGURE 2 – Power Derating Curve At zero volts At –2 volts (VR) Zener Voltage V Z FIGURE 3 – Capacitance vs. Zener Voltage (Typical) T4-LDS-0037, Rev 2 (111456) FIGURE 4 Zener Diode Characteristics and Symbol Identification ©2011 Microsemi Corporation Page 4 of 6 1N5518BUR-1 thru 1N5546BUR-1 ZENER IMPEDANCE ZZT (Ohms) GRAPHS (continued) 28 Volt 11 Volt 6.8 Volt OPERATING CURRENT I ZT (mA) FIGURE 5 ZENER IMPEDANCE vs. OPERATION CURRENT (typical) T4-LDS-0037, Rev 2 (111456) ©2011 Microsemi Corporation Page 5 of 6 1N5518BUR-1 thru 1N5546BUR-1 PACKAGE DIMENSIONS Ltr BD BL ECT S Dimensions Inch Millimeter Min Max Min Max .063 .067 1.60 1.70 .130 .146 3.30 3.71 .016 .022 0.41 0.56 .001 min 0.03 min NOTES: 1. Dimensions are in inch. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. PAD LAYOUT A B C T4-LDS-0037, Rev 2 (111456) INCHES .200 .055 .080 ©2011 Microsemi Corporation mm 5.08 1.40 2.03 Page 6 of 6