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JANTX1N5619

JANTX1N5619

  • 厂商:

    ACTEL(微芯科技)

  • 封装:

    Axial

  • 描述:

    DIODE GEN PURP 600V 1A AXIAL

  • 详情介绍
  • 数据手册
  • 价格&库存
JANTX1N5619 数据手册
1N5615 thru 1N5623 VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/429 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal “Category I” metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a “US” suffix (see separate data sheet for 1N5615US thru 1N5623US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages. “A” Package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES APPLICATIONS / BENEFITS • • • • • • • • • Popular JEDEC registered 1N5615 to 1N5623 series Voidless hermetically sealed glass package Triple-Layer Passivation Internal “Category I” Metallurgical bonds Working Peak Reverse Voltage 200 to 1000 Volts. JAN, JANTX, JANTXV, and JANS available per MILPRF-19500/429 • Surface mount equivalents also available in a square end-cap MELF configuration with “US” suffix (see separate data sheet for 1N5615US thru 1N5623US) • • • • • Fast recovery 1 Amp rectifiers 200 to 1000 V Military and other high-reliability applications General rectifier applications including bridges, halfbridges, catch diodes, etc. High forward surge current capability Extremely robust construction Low thermal resistance Controlled avalanche with peak reverse power capability Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS • • • • • • o WWW . Microsemi .C OM DESCRIPTION MECHANICAL AND PACKAGING • o Junction & Storage Temperature: -65 C to +175 C Thermal Resistance: 38oC/W junction to lead at 3/8 inch (10 mm) lead length from body o Thermal Impedance: 4.5 C/W @ 10 ms heating time Average Rectified Forward Current (IO): 1.0 Amps @ TA = 55ºC Forward Surge Current: 30 Amps @ 8.3 ms half-sine Solder Temperatures: 260ºC for 10 s (maximum) • • • • • CASE: Hermetically sealed voidless hard glass with Tungsten slugs (package dimensions on last page) TERMINATIONS: Axial leads are copper with Tin/Lead (Sn/Pb) finish. Note: Previous inventory had solid Silver axial-leads and no finish. MARKING: Body paint and part number, etc. POLARITY: Cathode band TAPE & REEL option: Standard per EIA-296 WEIGHT: 340 mg ELECTRICAL CHARACTERISTICS TYPE 200 400 600 800 1000 MINIMUM BREAKDOWN VOLTAGE VBR @ 50μA VOLTS 220 440 660 880 1100 AVERAGE RECTIFIED CURRENT IO @ T A (NOTE 1) AMPS o o 50 C 100 C 1.00 .750 1.00 .750 1.00 .750 1.00 .750 1.00 .750 FORWAR D VOLTAGE (MAX.) VF @ 3A VOLTS REVERSE CURRENT (MAX.) IR @ VRWM o .8 MIN. 1.6 MAX. 25 C .5 .5 .5 .5 .5 μA o 100 C 25 25 25 25 25 CAPACITANCE (MAX.) C @ VR =12 V f=1 MHz pF MAXIMUM SURGE CURRENT IFSM (NOTE 2) AMPS REVERSE RECOVERY (MAX.) (NOTE 3) trr ns 45 35 25 20 15 25 25 25 25 25 150 150 250 300 500 NOTE 1: From 1 Amp at TA = 55oC, derate linearly at 5.56 mA/ oC to 0.75 Amp at TA = 100oC. From TA = 100oC, derate linearly at 7.5 mA/oC to 0 Amps at TA = 200 oC. These ambient ratings are for PC boards where thermal o resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175 C. o NOTE 2: TA = 100 C, f = 60 Hz, IO = 750 mA for ten 8.3 ms surges @ 1 minute intervals NOTE 3: IF = 0.5 A, IRM = 1 A, IR(REC) = 0.250 A Copyright © 2007 1-15-2007 REV D Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 1N5615 – 1N5623 1N5615 1N5617 1N5619 1N5621 1N5623 WORKING PEAK REVERSE VOLTAGE VRWM VOLTS 1N5615 thru 1N5623 VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION VBR VRWM IO VF IR C trr Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range Average Rectified Output Current: Output Current averaged over a full cycle with a 50 hZ or 60 Hz sine-wave input and a 180 degree conduction angle Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. WWW . Microsemi .C OM Symbol SYMBOLS & DEFINITIONS Definition GRAPHS FIGURE 1 MAXIMUM CURRENT vs LEAD TEMPERATURE FIGURE 2 TYPICAL REVERSE CURRENT vs PIV 1N5615 – 1N5623 Copyright © 2007 1-15-2007 REV D Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2 1N5615 thru 1N5623 VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION WWW . Microsemi .C OM FIGURE 3 MAXIMUM POWER vs LEAD TEMPERATURE FIGURE 4 TYPICAL FORWARD VOLTAGE vs FORWARD CURRENT PACKAGE DIMENSIONS 1N5615 – 1N5623 Dimensions: Inches/[mm] NOTE: Lead tolerance = +0.003/-0.004 inches Copyright © 2007 1-15-2007 REV D Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 3
JANTX1N5619
物料型号:1N5615至1N5623系列

器件简介:这是一系列军用级别的快速恢复整流二极管,适用于高可靠性应用,如军事和其他关键领域。这些器件采用无空洞玻璃封装,具有内部“Category I”冶金键合。

引脚分配:文档中没有明确指出引脚分配,但通常这类器件为轴向引脚。

参数特性: - 工作峰值反向电压:200至1000伏 - 平均整流电流:1.0安培 - 快速恢复 - 无空洞密封玻璃封装 - 内部“Category I”冶金键合 - 表面贴装等效器件带有“US”后缀

功能详解: - 这些器件适用于一般整流应用,包括整流桥、半桥、捕获二极管等。 - 具有高正向浪涌电流能力 - 极低的热阻 - 控制雪崩与峰值反向功率能力

应用信息: - 军事和高可靠性应用 - 一般整流应用

封装信息: - 轴向引脚封装,表面贴装封装带有“US”后缀 - 封装尺寸在文档的最后一页

电气特性表格提供了详细的工作峰值反向电压、最小击穿电压、平均整流电流、最大正向电压、最大反向电流、电容和最大浪涌电流等参数。

文档还包含了一些图表,例如最大电流与引脚温度的关系图、典型反向电流与峰值反向电压的关系图、最大功耗与引脚温度的关系图以及典型正向电压与正向电流的关系图。
JANTX1N5619 价格&库存

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JANTX1N5619
  •  国内价格 香港价格
  • 3+38.155783+4.77133
  • 15+37.9774815+4.74903
  • 40+37.9766440+4.74893
  • 100+37.97580100+4.74882
  • 250+37.97496250+4.74872

库存:236