JANTX1N6844U3

1N6844U3 Available on commercial versions SILICON SCHOTTKY POWER RECTIFIER 40 A, 100 V Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/679 DESCRIPTION This low-profile 1N6844U3 Schottky rectifier device is military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES U3 (SMD-0.5) Package • Surface mount equivalent of JEDEC registered 1N6844. • • Low profile ceramic SMD. JAN, JANTX, JANTXV qualifications available per MIL-PRF-19500/679. • RoHS compliant versions available (commercial grade only). APPLICATIONS / BENEFITS • • • • • • High surge rating. Low reverse leakage current. Low forward voltage. Seam welded package. Low capacitance. Ultrasonic aluminum wire bonds. MAXIMUM RATINGS @ T C = +25 oC unless otherwise noted Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance Junction-to-Ambient Thermal Resistance Junction-to-Case o (1.6 C/W maximum) Working Peak Reverse Voltage Junction Capacitance o Average DC Output Current @ TC = +125 C Non-Repetitive Sinusoidal Surge Current @ t p = 8.3 ms Symbol Value TJ and TSTG R ӨJA R ӨJC -65 to +150 40 2.0 V RWM 100 600 15 250 CJ IO I FSM Unit o C C/W o C/W o V pF A A MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0233, Rev. 1 (111958) ©2011 Microsemi Corporation Page 1 of 5 1N6844U3 MECHANICAL and PACKAGING • • • • • • CASE: Ceramic and gold over nickel plated steel. TERMINALS: Gold over nickel plated tungsten/copper. MARKING: Part number, date code, A = anode. POLARITY: See schematic on last page. WEIGHT: 0.9 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N6844 U3 (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = Commercial RoHS Compliance e3 = RoHS Compliant (available on commercial grade only) Blank = non-RoHS Compliant SMD-0.5 Surface Mount JEDEC type number (see Electrical Characteristics table) Symbol CJ IF IR TJ VF VR SYMBOLS & DEFINITIONS Definition Junction Capacitance: The junction capacitance in pF at a specified frequency (typically 1MHz) and specified voltage. Forward Current: The forward current dc value, no alternating component. Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. Junction Temperature: The temperature of a semiconductor junction. Forward Voltage: The forward voltage the device will exhibit at a specified current (typically shown as maximum value). Reverse Voltage: The reverse voltage dc value, no alternating component. T4-LDS-0233, Rev. 1 (111958) ©2011 Microsemi Corporation Page 2 of 5 1N6844U3 ELECTRICAL CHARACTERISTICS @ T A = +25oC unless otherwise noted Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Forward Voltage* IF = 5 A I F = 15 A I F = 20 A o I F = 5 A, TC = -55 C I F = 5 A, T C = +125 °C I F = 15 A, T C = +125 °C Reverse Current V R = 100 V V R = 100 V, T C = +125 °C Junction Capacitance VR = 5 V f = 1 MHz V SIG = 50 mV (p-p) VF 0.70 0.90 1.00 0.85 0.58 0.72 V IR 0.100 15.00 mA CJ 600 pF * Pulse test: Pulse width 300 µsec, duty cycle 2%. T4-LDS-0233, Rev. 1 (111958) ©2011 Microsemi Corporation Page 3 of 5 1N6844U3 Squarewave Operation Maximum IO Rating (A) GRAPHS o TC ( C) Case Temperature Thermal Impedance –ZӨJX (oC/W) FIGURE 1 Temperature-Current Derating t1, Rectangular Pulse Duration (Sec) FIGURE 2 Thermal Impedance T4-LDS-0233, Rev. 1 (111958) ©2011 Microsemi Corporation Page 4 of 5 1N6844U3 PACKAGE DIMENSIONS NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. Schematic T4-LDS-0233, Rev. 1 (111958) ©2011 Microsemi Corporation Symbol BL BW CH LH LL1 LL2 LS1 LS2 LW1 LW2 Q1 Q2 Term 1 Term 2 Term 3 DIMENSIONS INCH MILLIMETERS Min Max Min Max .395 .405 10.03 10.29 .291 .301 7.39 7.65 .112 .124 2.84 3.15 .010 .020 0.25 0.51 .220 .230 5.59 5.84 .115 .125 2.92 3.18 .150 BSC 3.81 BSC .075 BSC 1.91 BSC .281 .291 7.14 7.39 .090 .100 2.29 2.54 .030 0.76 .030 0.76 Cathode Anode (See Schematic) Anode (See Schematic) Page 5 of 5