JANTX2N5238

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394 DEVICES LEVELS 2N4150 2N4150S 2N5237 2N5237S 2N5238 2N5238S JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Symbol 2N4150 2N4150S 2N5237 2N5237S 2N5238 2N5238S Unit Collector-Emitter Voltage VCEO 70 120 170 Vdc Collector-Base Voltage VCBO 100 150 200 Vdc Emitter-Base Voltage VEBO 10 Vdc IC 10 Adc PT 1.0 15 W Tj , Tstg -65 to +200 °C RθJC RθJA 10 175 °C/W Parameters / Test Conditions Collector Current Total Power Dissipation (1) @ TA = +25°C @ TC = +25°C (2) Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to Case Junction- to Ambient 1) 2) TO-5 2N4150, 2N5237, 2N5238 Derate linearly @ 5.7mW/°C for TA > +25°C Derate linearly @ 100mW/°C for TC > +25°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S V(BR)CEO 70 120 170 Collector-Emitter Cutoff Current VBE = 0.5Vdc, VCE = 60Vdc VBE = 0.5Vdc, VCE = 110Vdc VBE = 0.5Vdc, VCE = 160Vdc 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S ICEX Collector-Emitter Cutoff Current VCE = 60Vdc VCE = 110Vdc VCE = 160Vdc 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S ICEO 10 10 10 µAdc IEBO 10 0.1 µAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 0.1mAdc Emitter-Base Cutoff Current VEB = 7.0Vdc VEB = 5.0Vdc T4-LDS-0014 Rev. 4 (082192) Max. Unit Vdc 10 10 10 µAdc TO-39 (TO-205AD) 2N4150S, 2N5237S, 2N5238S Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.) Parameters / Test Conditions Collector-Base Cutoff Current VCB = 100Vdc VCB = 150Vdc VCB = 200Vdc VCB = 80Vdc ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 1.0Adc, VCE = 5.0Vdc IC = 5.0Adc, VCE = 5.0Vdc IC = 10Adc, VCE = 5.0Vdc Collector-Emitter Saturation Voltage IC = 5.0Adc, IB = 0.5Adc IC = 10Adc, IB = 1.0Adc Base-Emitter Saturation Voltage IC = 5.0Adc, IB = 0.5Adc IC = 10Adc, IB = 1.0Adc Symbol 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S All Types 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S All Types All Types Min. 10 10 10 0.1 ICBO hFE Max. 50 50 50 40 10 Unit µAdc 200 225 225 120 - VCE(sat) 0.6 2.5 Vdc VBE(sat) 1.5 25 Vdc Unit DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 0.2Adc, VCE = 10Vdc, f = 10MHz Forward Current Transfer Ratio IC = 50mAdc, VCE = 5.0V, f = 1.0kHz 2N4150, 2N4150S 2N5237, 2N5237S 2N5238, 2N5238S Output Capacitance VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Symbol Min. Max. |hfe| 1.5 7.5 hfe 40 40 40 160 160 250 Cobo 350 pF Max. 50 500 1.5 500 Unit ns ns µs ns SWITCHING CHARACTERISTICS Parameters / Test Conditions Delay Time Rise Time Storage Time Fall Time VCC = 20Vdc, VBB = 5.0Vdc IC = 5.0Adc, IB1 = 0.5Adc VCC = 20Vdc, VBB = 5.0Vdc IC = 5.0Adc, IB1 = -IB2 = -0.5Adc Symbol td tr ts tf Min. SAFE OPERATING AREA DC Tests TC = +25°C, 1 Cycle, t = 1.0s Test 1 VCE = 40Vdc, IC = 0.22Adc Test 2 VCE = 70Vdc, IC = 90mAdc Test 3 VCE = 120Vdc, IC = 15mAdc 2N5237, 2N5237S VCE = 170Vdc, IC = 3.5mAdc 2N5238, 2N5238S (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0% T4-LDS-0014 Rev. 4 (082192) Page 2 of 2