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JANTX2N6274

JANTX2N6274

  • 厂商:

    ACTEL(微芯科技)

  • 封装:

    TO-204AE

  • 描述:

    TRANS NPN 100V 50A TO-3

  • 数据手册
  • 价格&库存
JANTX2N6274 数据手册
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/514 DEVICES LEVELS 2N6274 2N6277 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Condition Symbol 2N6274 2N6277 Unit Collector-Emitter Voltage VCEO 100 150 Vdc Collector-Base Voltage VCBO 120 180 Vdc Emitter-Base Voltage VEBO 6.0 6.0 Vdc Base Current IB 20 20 Adc Collector Current IC 50 50 250 143 -65 to +200 Adc @ TC = +25°C (1) Total Power Dissipation @ TC = +100°C (2) Operating & Storage Temperature Range PT Tj , Tstg W °C TO-3 (TO-204AE) THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal resistance, Junction-to-Case Symbol Max Unit RθJC 0.7 °C/W Note: 1) Derate linearly 1.43 W/°C between TC = +25°C and TC = 200°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit 2N6274 2N6277 V(BR)CEO 100 150 2N6274 2N6277 ICEO 50 50 µAdc 2N6274 2N6277 ICEX 10 10 µAdc 2N6274 2N6277 ICBO 10 10 µAdc IEBO 100 µAdc OFF CHARACTERTICS (1) Collector-Emitter Breakdown Voltage IC = 50mAdc Collector-Emitter Cutoff Current VCE = 50Vdc VCE = 75Vdc Collector-Emitter Cutoff Current VCE = 120Vdc, VBE = -1.5Vdc VCE = 180Vdc, VBE = -1.5Vdc Collector-Base Cutoff Current VCB = 120Vdc VCB = 180Vdc Emitter-Base Cutoff Current VEB = 6.0Vdc T4-LDS-0163 Rev. 1 (100546) Vdc Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. hFE 50 30 10 120 Unit (2) ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 1.0Adc, VCE = 4.0Vdc IC = 20Adc, VCE = 4.0Vdc IC = 50Adc, VCE = 4.0Vdc Collector-Emitter Saturation Voltage IC = 20Adc, IB = 2.0Adc IC = 50Adc, IB = 10Adc Base-Emitter Saturation Voltage IC = 20Adc, IB = 2.0Adc VCE(sat) 1.0 3.0 Vdc VBE(sat) 1.8 Vdc Min. Max. Unit 3.0 12 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Common Emitter Small-Signal Short-Circuit, Forward Current Transfer Ratio IC = 1.0Adc, VCE = 10Vdc, f = 10MHz Output Capacitance VCB = 10Vdc, IE = 0, f = 1.0MHz Symbol |hfe| Cobo 600 pF Max. Unit SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Turn-On Time VCC = 80Vdc; IC = 20Adc; IB = 2.0Adc ton 0.5 μs Turn-Off Time VCC = 80Vdc ; IC = 20Adc; IB1 = -IB2 = 2.0Adc toff 1.05 μs SAFE OPERATING AREA DC Tests TC = +25°C, 1 Cycle, t = 1.0s Test 1 VCE = 5.0Vdc, IC = 50Adc All Types Test 2 VCE = 8.6Vdc, IC = 165mAdc All Types Test 3 VCE = 80Vdc, IC = 29mAdc 2N6274 Test 4 VCE = 120Vdc, IC = 110mAdc 2N6277 (2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0% T4-LDS-0163 Rev. 1 (100546) Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com PACKAGE DIMENSIONS Ltr CD CH HR HR1 HT LD LL L1 MHD MHS PS PS1 S1 Dimensions Inches Millimeters Min Max Min Max .875 22.22 .250 .328 6.35 8.33 .495 .525 12.57 13.34 .131 .188 3.33 4.78 .060 .135 1.52 3.43 .057 .063 1.45 1.60 .312 .500 7.92 12.70 .050 1.27 .151 .161 3.84 4.09 1.177 1.197 29.90 30.40 .420 .440 10.67 11.18 .205 .225 5.21 5.72 .655 .675 16.64 17.15 Notes 3 6 5, 9 4, 5, 9 5, 9 7 5 NOTE: 1. * 2. 3. 4. * * 5. 6. 7. 8. 9. 10. 11. Dimensions are in inches. Millimeters are given for general information only. Body contour is optional within zone defined by CD. These dimensions shall be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane. When gauge is not used, measurement shall be made at seating plane. Both terminals. At both ends. Two holes. Terminal 1 is the emitter, terminal 2 is base. The collector shall be electrically connected to the case. LD applies between L1 and LL. Lead diameter shall not exceed twice LD within L1. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. * FIGURE 1. Physical dimensions (TO-3) T4-LDS-0163 Rev. 1 (100546) Page 3 of 3
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