0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
JANTXV1N4115C-1/TR

JANTXV1N4115C-1/TR

  • 厂商:

    ACTEL(微芯科技)

  • 封装:

    DO-35(DO-204AH)

  • 描述:

    VOLTAGE REGULATOR

  • 详情介绍
  • 数据手册
  • 价格&库存
JANTXV1N4115C-1/TR 数据手册
1N4614-1 – 1N4627-1e3, 1N4099-1 – 1N4135-1e3 Available on commercial versions Qualified Levels: JAN, JANTX, JANTXV and JANS 500 mW Metallurgically Bonded Glass Zener Diodes Qualified per MIL-PRF-19500/435 DESCRIPTION The 1N4099-1 through 1N4135-1 and 1N4614-1 through 1N4627-1 series are 500 mW, Zener voltage regulators in the axial-leaded, glass DO-35 package. Voltages from 1.8 to 100V in 5%, 2%, and 1% tolerances are available. They are constructed with an internal metallurgical bond and are mil-qualified up to the JANS level for high reliability applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • • • • • JEDEC registered 1N4099 through 1N4135 and 1N4614 through 1N4627 series. Internal metallurgical bond. Max noise density 40 μV / √Hz for 6.8 V and up. Falls quickly to 1 μV / √Hz at lower voltages. JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/435. RoHS compliant versions available (commercial grade only). APPLICATIONS / BENEFITS • • • • • • • • DO-35 (DO-204AH) Package Also available in: DO-213AA package (surface mount) 1N4099UR-1 – 1N4135UR-1 and 1N4614UR-1 – 1N4627UR-1 DO-216 package Flexible axial-lead mounting terminals. Regulates voltage over broad ranges of current and temperature. Extensive selection from 1.8 to 100 volts. Voltage tolerances of 5% (standard), 2% and 1% are available. Hermetically sealed surface mount package. Non-sensitive to ESD per MIL-STD-750 method 1020. Minimal capacitance (see Figure 3). Inherently radiation hard as described in Microsemi MicroNote 050. (tabbed surface mount) 1PMT4099 – 1PMT4135 and 1PMT4614 – 1PMT4627 MAXIMUM RATINGS @ T C = +25 ºC unless otherwise specified Parameters/Test Conditions Junction and Storage Temperature (1) Thermal Resistance Junction-to-Ambient Thermal Resistance Junction-to-Lead @ 3/8 (10 mm) lead length from body (2) Rated Average Power Dissipation Forward Voltage @ 200 mA Solder Temperature @ 10 s Symbol Value Unit T J and T STG R ӨJA R ӨJL -65 to +175 300 250 C o C/W o C/W P M(AV) VF 0.5 1.1 260 W V o C o Notes: 1. When mounted on FR4 PC board (1 oz Cu) with 4 mm2 copper pads and track width 1 mm, length 25 mm. 2. The 0.5 W should be linearly derated starting at T L = 50 °C and goes to zero at 175 °C. For ambient T A condition on a typical PC board, it linearly derates from 500 mW starting at 25 °C and goes to zero at 175 °C (see Figure 2). T4-LDS-0245-2, Rev. 1 (5/31/13) ©2013 Microsemi Corporation MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 5 1N4614-1 – 1N4627-1e3, 1N4099-1 – 1N4135-1e3 MECHANICAL and PACKAGING • • • • • • • CASE: Hermetically sealed axial-lead glass DO-35 (DO-204AH) style package. TERMINALS: Tin-lead or RoHS compliant annealed matte-tin (on commercial grade only) plating. Solderable per MIL-STD-750, method 2026. POLARITY: Cathode indicated by band. The diode is to be operated with the banded end positive with respect to the opposite end for Zener regulation. MARKING: Part number. TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number). Consult factory for quantities. WEIGHT: Approximately 0.2 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N4099 C -1 e3 Reliability Level JAN = JAN level JANTX = JANTX level JANTXV = JANTXV level JANS = JANS level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant Metallurgically Bonded JEDEC type number (See Electrical Characteristics table) Zener Voltage Tolerance Blank = 5% C = 2% D = 1% SYMBOLS & DEFINITIONS Definition Symbol α VZ IR I Z , I ZT , I ZK I ZM ND VR VZ Z ZT or Z ZK Temperature Coefficient of Regulator Voltage: The change in regulator voltage divided by the change in temperature that caused it expressed in %/C or mV/°C. Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. Regulator Current: The dc regulator current (I Z ), at a specified test point (I ZT ), near breakdown knee (I ZK ). Maximum Regulator (Zener) Current: The maximum rated dc current for the specified power rating. Noise Density: The noise generated over a specified frequency bandwidth usually specified in terms of mV/ √Hz. Reverse Voltage: The reverse voltage dc value, no alternating component. Zener Voltage: The Zener voltage the device will exhibit at a specified current (I Z ) in its breakdown region. Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a specified rms current modulation (typically 10% of I ZT or I ZK ) and superimposed on I ZT or I ZK respectively. T4-LDS-0245-2, Rev. 1 (5/31/13) ©2013 Microsemi Corporation Page 2 of 5 1N4614-1 – 1N4627-1e3, 1N4099-1 – 1N4135-1e3 ELECTRICAL CHARACTERISTICS @ 25 °C unless otherwise stated INDUSTRY PART NUMBER* (Note 1) NOMINAL ZENER VOLTAGE ZENER TEST CURRENT V Z @ I ZT I ZT (Note 2) Volts 1N4614-1 1.8 1N4615-1 2.0 1N4616-1 2.2 1N4617-1 2.4 1N4618-1 2.7 1N4619-1 3.0 1N4620-1 3.3 1N4621-1 3.6 1N4622-1 3.9 1N4623-1 4.3 1N4624-1 4.7 1N4625-1 5.1 1N4626-1 5.6 1N4627-1 6.2 1N4099-1 6.8 1N4100-1 7.5 1N4101-1 8.2 1N4102-1 8.7 1N4103-1 9.1 1N4104-1 10.0 1N4105-1 11.0 1N4106-1 12.0 1N4107-1 13.0 1N4108-1 14.0 1N4109-1 15.0 1N4110-1 16.0 1N4111-1 17.0 1N4112-1 18.0 1N4113-1 19.0 1N4114-1 20.0 1N4115-1 22.0 1N4116-1 24.0 1N4117-1 25.0 1N4118-1 27.0 1N4119-1 28.0 1N4120-1 30.0 1N4121-1 33.0 1N4122-1 36.0 1N4123-1 39.0 1N4124-1 43.0 1N4125-1 47.0 1N4126-1 51.0 1N4127-1 56.0 1N4128-1 60.0 1N4129-1 62.0 1N4130-1 68.0 1N4131-1 75.0 1N4132-1 82.0 1N4133-1 87.0 1N4134-1 91.0 1N4135-1 100.0 *JEDEC Registered Data. MAXIMUM ZENER IMPEDANCE MAXIMUM REVERSE CURRENT MAXIMUM NOISE DENSITY MAXIMUM ZENER CURRENT Z ZT IR @ VR N D @ I ZT I ZM µV/√Hz 1 1 1 1 1 1 1 1 1 1 1 2 4 5 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 mA 120.0 110.0 100.0 95.0 90.0 87.0 85.0 83.0 80.0 77.0 75.0 70.0 65.0 61.0 56.0 51.0 46.0 44.0 42.0 38.0 35.0 32.0 29.0 27.0 25.0 24.0 22.0 21.0 20.0 19.0 17.0 16.0 15.0 14.0 14.0 13.0 12.0 11.0 9.8 8.9 8.1 7.5 6.7 6.4 6.1 5.6 5.1 4.6 4.4 4.2 3.8 (Note 3) µA 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 Ohms 1200 1250 1300 1400 1500 1600 1650 1700 1650 1600 1550 1500 1400 1200 200 200 200 200 200 200 200 200 200 200 100 100 100 100 150 150 150 150 150 150 200 200 200 200 200 250 250 300 300 400 500 700 700 800 1000 1200 1600 µA 3.5 2.5 2.0 1.0 0.5 0.4 3.5 3.5 2.5 2.0 5.0 5.0 5.0 5.0 1.0 1.0 0.5 0.5 0.5 0.5 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 Volts 1.0 1.0 1.0 1.0 1.0 1.0 1.5 2.0 2.0 2.0 3.0 3.0 4.0 5.0 5.2 5.7 6.3 6.7 7.0 7.6 8.5 9.2 9.9 10.7 11.4 12.2 13.0 13.7 14.5 15.2 16.8 18.3 19.0 20.5 21.3 22.8 25.1 27.4 29.7 32.7 35.8 38.8 42.6 45.6 47.1 51.7 57.0 62.4 66.2 69.2 76.0 MAXIMUM TEMP. COEFF. OF ZENER VOLTAGE α VZ %/oC -0.075 -0.075 -0.075 -0.075 -0.075 -0.075 -0.075 -0.065 -0.060 -0.050 -0.050,+0.020 -0.045,+0.030 -0.020,+0.040 -0.010,+0.050 +0.060 +0.065 +0.070 +0.075 +0.080 +0.080 +0.080 +0.080 +0.080 +0.085 +0.085 +0.085 +0.090 +0.090 +0.090 +0.090 +0.090 +0.090 +0.090 +0.090 +0.095 +0.095 +0.095 +0.095 +0.095 +0.095 +0.095 +0.100 +0.100 +0.100 +0.100 +0.100 +0.100 +0.100 +0.100 +0.100 +0.100 SEE NOTES ON NEXT PAGE. T4-LDS-0245-2, Rev. 1 (5/31/13) ©2013 Microsemi Corporation Page 3 of 5 1N4614-1 – 1N4627-1e3, 1N4099-1 – 1N4135-1e3 NOTE 1: The JEDEC type numbers shown in the prior table have a standard tolerance of +/-5% on the nominal Zener voltage. V Z is measured with the diode in thermal equilibrium (still air) at 25 oC. NOTE 2: Zener impedance is derived by superimposing on I ZT a 60 Hz rms ac current at 10% of I ZT (25 µA ). See MicroNote 202 for Zener impedance variation with different operating currents. NOTE 3: Based upon 400 mW maximum power dissipation at 25 ºC lead temperature, allowance has been made for the higher voltage associated with operation at higher currents. Pd Rated Power Dissipation (mW) GRAPHS o Temperature ( C) FIGURE 2 – Power Derating Curve FIGURE 1 – Noise Density Measurement Circuit Typical Capacitance in Picofarads (pF) Noise density, (N D ) is specified in microvolt-rms per square-root-hertz. Actual measurement is performed using a 1 KHz to 3 KHz frequency bandpass filter at a constant Zener test current (I ZT ) at 25 oC ambient temperature. N D is calculated from the formula. Zener Voltage V Z FIGURE 3 – Capacitance vs. Zener Voltage (Typical) T4-LDS-0245-2, Rev. 1 (5/31/13) ©2013 Microsemi Corporation Page 4 of 5 1N4614-1 – 1N4627-1e3, 1N4099-1 – 1N4135-1e3 PACKAGE DIMENSIONS Ltr BD BL LD LL LL 1 Dimensions Inches Millimeters Min Max Min Max 0.056 0.090 1.42 2.29 0.140 0.200 3.56 5.08 0.018 0.022 0.46 0.56 1.000 1.500 25.40 38.10 0.050 1.27 Notes 3 3 4 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for information only. 3. Package contour optional within BD and length BL. Heat slugs, if any, shall be included within this cylinder but shall not be subject to minimum limit of BD. The BL dimension shall include the entire body including slugs. 4. Within this zone lead, diameter may vary to allow for lead finishes and irregularities other than heat slugs. 5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0245-2, Rev. 1 (5/31/13) ©2013 Microsemi Corporation Page 5 of 5
JANTXV1N4115C-1/TR
物料型号:1N4614-1至1N4627-1e3,1N4099-1至1N4135-1e3

器件简介:这些是500毫瓦的金属氧化物压敏电阻,采用轴向引线、玻璃封装的DO-35封装。它们具有从1.8到100伏的电压范围,并且有5%、2%和1%的电压容差。这些器件内部采用金属冶金键合,符合MIL-PRF-19500/435标准,适用于高可靠性应用。

引脚分配:采用轴向引线,阳极通过带色环的一端标识。

参数特性:包括结温和存储温度范围为-65至+175摄氏度,结到环境的热阻为300摄氏度/瓦,结到引脚的热阻为250摄氏度/瓦,额定平均功率耗散为0.5瓦。

功能详解:这些压敏电阻可以调节在宽电流和温度范围内的电压,提供从1.8到100伏的广泛选择,并且有5%、2%和1%的电压容差。它们还具有密封的表面贴装封装,对静电放电不敏感。

应用信息:适用于需要电压调节的场合,具有灵活的轴向引线安装端子,以及广泛的电压选择。

封装信息:除了DO-35封装外,还提供DO-213AA封装的表面贴装版本,以及带引线的DO-216封装版本。
JANTXV1N4115C-1/TR 价格&库存

很抱歉,暂时无法提供与“JANTXV1N4115C-1/TR”相匹配的价格&库存,您可以联系我们找货

免费人工找货