1N5550 thru 1N5554
Available on
commercial
versions
VOIDLESS HERMETICALLY SEALED STANDARD
RECOVERY GLASS RECTIFIERS
Qualified Levels:
JAN, JANTX, JANTXV
and JANS
Qualified to MIL-PRF-19500/420
DESCRIPTION
This “standard recovery” rectifier diode series is military qualified and is ideal for high-reliability
applications where a failure cannot be tolerated. These industry-recognized 5.0 amp rated
rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed
with voidless-glass construction using an internal “Category 1” metallurgical bond. These
devices are also available in surface mount MELF package configurations. Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings with various
recovery time speed requirements including fast and ultrafast device types in both throughhole and surface mount packages.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
•
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•
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JEDEC registered 1N5550 thru 1N5554 series.
Voidless hermetically sealed glass package.
Extremely robust construction.
Quadruple-layer passivation.
Internal “Category 1” metallurgical bonds.
JAN, JANTX, JANTXV and JANS qualified versions available per MIL-PRF-19500/420.
RoHS compliant versions available (commercial grade only).
“B” Package
Also available in:
APPLICATIONS / BENEFITS
•
•
•
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Standard recovery 5 amp 200 to 1000 volts rectifier series.
Military and other high-reliability applications.
General rectifier applications including bridges, half-bridges, catch diodes, etc.
High forward surge current capability.
Low thermal resistance.
Controlled avalanche with peak reverse power capability.
•
•
Extremely robust construction.
Inherently radiation hard as described in Microsemi “MicroNote 050”.
“B” SQ-MELF
(D-5B) Package
(surface mount)
1N5550US – 1N5554US
MAXIMUM RATINGS @ TA = 25 oC unless otherwise noted.
Parameters/Test Conditions
Junction and Storage Temperature
(1)
Thermal Resistance Junction-to-Lead
Thermal Impedance @ 10 ms heating time
Maximum Forward Surge Current (8.3 ms half sine)
(1)
o
Average Rectified Forward Current
@ TL = 30 C
(3)
o
Average Rectified Forward Current
@ TA = 55 C
o
@ TA = 100 C
Working Peak Reverse Voltage
1N5550
1N5551
1N5552
1N5553
1N5554
Solder Temperature @ 10 s
Symbol
Value
TJ and TSTG
R ӨJL
Z ӨJX
I FSM
I O(L)
(2)
I O2
(4)
I O3
V RWM
-65 to +175
22
1.5
100
5
3
2
200
400
600
800
1000
260
TSP
Unit
o
C
C/W
o
C/W
A
A
A
A
V
o
o
C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
See notes on next page.
T4-LDS-0230, Rev. 1 (111901)
©2011 Microsemi Corporation
Page 1 of 6
1N5550 thru 1N5554
MAXIMUM RATINGS
Notes: 1. At .375 inch (9.52 mm) lead length from body.
o
2. Derate linearly at 22.2 mA/ºC from +55 ºC to +100 C.
3. These I O ratings are for a thermally (PC boards or other) mounting methods where the lead or end-cap temperatures cannot be maintained
and where thermal resistance from mounting point to ambient is still sufficiently controlled where T J(MAX) does not exceed 175 oC. This
equates to R θJX ≤ 47 ºC/W.
4. Derate linearly at 26.7 mA/°C above T A = +100 °C to +175 °C ambient.
MECHANICAL and PACKAGING
•
•
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•
•
•
•
CASE: Hermetically sealed voidless hard glass with tungsten slugs.
TERMINALS: Axial-leads are tin/lead (Sn/Pb) over copper. RoHS compliant matte-tin is available for commercial only.
MARKING: Body paint and part number.
POLARITY: Cathode band.
TAPE & REEL option: Standard per EIA-296. Consult factory for quantities.
WEIGHT: 750 milligrams.
See Package Dimensions on last page.
PART NOMENCLATURE
JAN
1N5550
(e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = commercial
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
JEDEC type number
See Electrical Characteristics
table
SYMBOLS & DEFINITIONS
Definition
Symbol
V BR
V RWM
IO
VF
IR
t rr
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range
excluding all transient voltages (ref JESD282-B).
Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs.
T4-LDS-0230, Rev. 1 (111901)
©2011 Microsemi Corporation
Page 2 of 6
1N5550 thru 1N5554
ELECTRICAL CHARACTERISTICS @ TA = 25 oC unless otherwise noted.
TYPE
1N5550
1N5551
1N5552
1N5553
1N5554
MINIMUM
BREAKDOWN
VOLTAGE
V BR
I R @ 50 µA
Volts
220
440
660
880
1100
FORWARD VOLTAGE
V F @ I F = 9 A (pk)
MIN.
Volts
0.6 V (pk)
0.6 V (pk)
0.6 V (pk)
0.6 V (pk)
0.6 V (pk)
MAX.
Volts
1.2 V (pk)
1.2 V (pk)
1.2 V (pk)
1.3 V (pk)
1.3 V (pk)
MAXIMUM
REVERSE
CURRENT
I R @ V RWM
REVERSE
RECOVERY
t rr
(Note 1)
µA
1.0
1.0
1.0
1.0
1.0
µs
2.0
2.0
2.0
2.0
2.0
NOTE 1: I F = 0.5 A, I RM = 1.0 A, I R(REC) = .250 A.
T4-LDS-0230, Rev. 1 (111901)
©2011 Microsemi Corporation
Page 3 of 6
1N5550 thru 1N5554
o
ZӨJX ( C/Watt)
GRAPHS
t H Heating Time (seconds)
Average Rectified Current in (Amps)
FIGURE 1
Maximum Thermal Impedance
o
Lead Temperature TL ( C)
FIGURE 2
Maximum Current vs. Lead Temperature
NOTES: 1. Dimensions are in inches.
2. Metric equivalents (to the nearest .01 mm) are given for general information only and are based upon 1 inch = 25.4 mm.
T4-LDS-0230, Rev. 1 (111901)
©2011 Microsemi Corporation
Page 4 of 6
1N5550 thru 1N5554
IF – Forward Current (A)
GRAPHS (continued)
V F – Forward Voltage (V)
FIGURE 3
Typical Forward Voltage vs. Forward Current
T4-LDS-0230, Rev. 1 (111901)
©2011 Microsemi Corporation
Page 5 of 6
1N5550 thru 1N5554
PACKAGE DIMENSIONS
Dimensions
Ltr
Inch
Min
Max
Millimeters
Min
Max
BD
BL
0.115
0.130
0.180
0.300
2.92
3.30
4.57
7.62
LD
LL
0.036
0.900
0.042
1.300
0.92
22.86
1.07
33.02
Notes
3, 4
4
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. The BL dimension shall include the entire body including slugs and sections of the lead over which the diameter
is uncontrolled. This uncontrolled area is defined as the zone between the edge of the diode body and extending
.050 inch (1.27 mm) onto the leads.
4. Dimension BD shall be measured at the largest diameter.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
T4-LDS-0230, Rev. 1 (111901)
©2011 Microsemi Corporation
Page 6 of 6
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