2N2904(A) and 2N2905(A)
Qualified Levels:
JAN, JANTX, JANTXV
and JANS
PNP SWITCHING SILICON
TRANSISTOR
Available on
commercial
versions
Qualified per MIL-PRF-19500/290
DESCRIPTION
This family of 2N2904 and 2N2905A switching transistors are military qualified up to the JANS
level for high-reliability applications. These devices are also available in a TO-5 package.
Microsemi also offers numerous other transistor products to meet higher and lower power
ratings with various switching speed requirements in both through-hole and surface-mount
packages.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
•
JEDEC registered 2N2904 through 2N2905A series.
•
JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/290.
TO-39 (TO-205AD)
Package
(See part nomenclature for all available options.)
•
RoHS compliant versions available (commercial grade only).
Also available in:
TO-5 package
(long-leaded)
2N2904AL & 2N2905AL
APPLICATIONS / BENEFITS
•
General purpose transistors for high speed switching applications.
•
Military and other high-reliability applications.
MAXIMUM RATINGS
Parameters / Test Conditions
Symbol
Value
2N2904
2N2904A
2N2905
2N2905A
40
60
Unit
Collector-Emitter Voltage
V CEO
Collector-Base Voltage
V CBO
60
V
Emitter-Base Voltage
V EBO
5.0
V
Thermal Resistance Junction-to-Ambient
R ӨJA
195
o
C/W
R ӨJC
50
o
C/W
IC
600
mA
PT
0.8
3.0
W
TJ &
T stg
-65 to +200
°C
Thermal Resistance Junction-to-Case
Collector Current
Total Power Dissipation
(1)
@ T A = +25 °C
(2)
@ T C = +25 °C
Operating & Storage Junction Temperature Range
Notes: 1. For derating, see figures 1 and 2.
2. For thermal impedance, see figures 3 and 4.
T4-LDS-0186, Rev. 2 (121219)
©2012 Microsemi Corporation
V
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Page 1 of 7
2N2904(A) and 2N2905(A)
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Hermetically sealed, kovar base, nickel cap.
TERMINALS: Leads are kovar, nickel plated, and finish is solder dip (Sn63/Pb37). Can be RoHS compliant with pure matte-tin
(commercial grade only).
MARKING: Part number, date code, manufacturer’s ID.
POLARITY: PNP (see package outline).
WEIGHT: Approximately 1.064 grams.
See Package Dimensions on last page.
PART NOMENCLATURE
JAN
2N2904
A
(e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Electrical Parameter Modifier
JEDEC type number
(see Electrical Characteristics
table)
Symbol
C obo
I CEO
I CEX
I EBO
h FE
V CEO
V CBO
V EBO
SYMBOLS & DEFINITIONS
Definition
Common-base open-circuit output capacitance.
Collector cutoff current, base open.
Collector cutoff current, circuit between base and emitter.
Emitter cutoff current, collector open.
Common-emitter static forward current transfer ratio.
Collector-emitter voltage, base open.
Collector-emitter voltage, emitter open.
Emitter-base voltage, collector open.
T4-LDS-0186, Rev. 2 (121219)
©2012 Microsemi Corporation
Page 2 of 7
2N2904(A) and 2N2905(A)
ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I C = 10 mA
2N2904, 2N2905
2N2904A, 2N2905A
Collector-Emitter Cutoff Voltage
V CE = 40 V
2N2904, 2N2905
V CE = 60 V
2N2904A, 2N2905A
Collector-Base Cutoff Current
V CB = 60 V
All Types
V CB = 50 V
2N2904, 2N2905
2N2904A, 2N2905A
V CB = 50 V @ T A = +150 ºC
2N2904, 2N2905
2N2904A, 2N2905A
Emitter-Base Cutoff Current
V EB = 3.5 V
V EB = 5.0 V
ON CHARACTERISTICS
Symbol
Min.
V (BR)CEO
40
60
Unit
V
I CES
1.0
µA
I CBO1
10
µA
I CBO2
20
10
nA
nA
I CBO3
20
10
µA
µA
I EBO
50
10
nA
µA
(1)
Forward-Current Transfer Ratio
I C = 0.1 mA, V CE = 10 V
2N2904
2N2905
2N2904A
2N2905A
20
35
40
75
I C = 1.0 mA, V CE = 10 V
2N2904
2N2905
2N2904A
2N2905A
I C = 10 mA, V CE = 10 V
2N2904
2N2905
2N2904A
2N2905A
I C = 150 mA, V CE = 10 V
2N2904, 2N2904A
2N2905, 2N2905A
40
100
I C = 500 mA, V CE = 10 V
2N2904
2N2905
2N2904A
2N2905A
20
30
40
50
T4-LDS-0186, Rev. 2 (121219)
Max.
25
50
40
100
h FE
©2012 Microsemi Corporation
175
450
175
450
35
75
40
100
120
300
Page 3 of 7
2N2904(A) and 2N2905(A)
ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted (continued)
Parameters / Test Conditions
(1)
ON CHARACTERISTICS (continued)
Collector-Emitter Saturation Voltage
I C = 150 mA, I B = 15 mA
I C = 500 mA, I B = 50 mA
Base-Emitter Saturation Voltage
I C = 150 mA, I B = 15 mA
I C = 500 mA, I B = 50 mA
Symbol
Min.
Max.
Unit
V CE(sat)
0.4
1.6
V
V BE(sat)
1.3
2.6
V
Max.
Unit
(1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%.
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Small-Signal Short-Circuit Forward-Current
Transfer Ratio
I C = 1.0 mA, V CE = 10
2N2904
V, f = 1.0 kHz
2N2905
2N2904A, 2N2905A
Small-Signal Short-Circuit Forward-Current
Transfer Ratio
I C = 50 mA, V CE = 20 V,
f = 100 MHz
Output Capacitance
V CB = 10 V, I E = 0,
100 kHz ≤ f ≤ 1.0MHz
Iutput Capacitance
V EB = 2.0 V, I C = 0,
100 kHz ≤ f ≤ 1.0MHz
Symbol
Min.
h fe
25
50
40
|h fe |
2.0
C obo
8.0
pF
C ibo
30
pF
Max.
Unit
on
45
ns
off
300
ns
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Turn-On Time
t
Turn-Off Time
t
T4-LDS-0186, Rev. 2 (121219)
©2012 Microsemi Corporation
Min.
Page 4 of 7
2N2904(A) and 2N2905(A)
DC Operation Maximum Rating (W)
GRAPHS
T a (°C) (Ambient)
DC Operation Maximum Rating (W)
FIGURE 1
Derating (R θJA ) PCB
Tc (ºC) (Case)
FIGURE 2
Derating (R θJA ) PCB
T4-LDS-0186, Rev. 2 (121219)
©2012 Microsemi Corporation
Page 5 of 7
2N2904(A) and 2N2905(A)
o
Theta ( C/W)
GRAPHS (continued)
Time (s)
FIGURE 3
o
Theta ( C /W)
Thermal impedance graph (R θJA )
Time (s)
FIGURE 4
Thermal impedance graph (R θJA )
T4-LDS-0186, Rev. 2 (121219)
©2012 Microsemi Corporation
Page 6 of 7
2N2904(A) and 2N2905(A)
PACKAGE DIMENSIONS
CD
CH
HD
LC
Dimensions
Millimeters
Min
Max
Min
Max
0.305
0.335
7.75
8.51
0.240
0.260
6.10
6.60
0.335
0.370
8.51
9.40
0.200 TP
5.08 TP
LD
0.016
0.021
0.41
0.53
7, 8
LL
LU
0.500
0.016
0.750
0.019
12.70
0.41
19.05
0.48
7, 8, 12
7, 8
1.27
7, 8
Symbol
Inch
L1
0.050
L2
0.250
6.35
P
Q
TL
TW
r
α
0.100
2.54
0.050
0.029
0.045
0.028
0.034
0.010
45° TP
1.27
0.74
1.14
0.71
0.86
0.25
45° TP
Note
6
7, 8
5
4
3
10
6
NOTES:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
Dimensions are in inches.
Millimeters are given for general information only.
Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
Dimension TL measured from maximum HD.
Body contour optional within zone defined by HD, CD, and Q.
Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch
(0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is
uncontrolled in L1 and beyond LL minimum.
All three leads.
The collector shall be internally connected to the case.
Dimension r (radius) applies to both inside corners of tab.
In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
For “L” suffix devices, dimension LL is 1.50 (38.10 mm) minimum, 1.75 (44.45 mm) maximum.
Lead 1 = emitter, lead 2 = base, lead 3 = collector.
T4-LDS-0186, Rev. 2 (121219)
©2012 Microsemi Corporation
Page 7 of 7
