MCP14A0301/2
3.0A MOSFET Driver
with Low Threshold Input and Enable
Features
General Description
• High Peak Output Current: 3.0A (typical)
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• High Capacitive Load Drive Capability:
- 1800 pF in 13 ns (typical)
• Short Delay Times: 15 ns (tD1), 18 ns (tD2) (typical)
• Low Supply Current: 360 µA (typical)
• Low-Voltage Threshold Input and Enable with
Hysteresis
• Latch-Up Protected: Withstands 500 mA Reverse
Current
• Space-Saving Packages:
- 8-Lead MSOP
- 8-Lead SOIC
- 8-Lead 2 x 2 WDFN
The MCP14A0301/2 devices are high-speed MOSFET
drivers that are capable of providing up to 3.0A of peak
current while operating from a single 4.5V to 18V
supply. There are two output configurations available;
inverting
(MCP14A0301)
and
noninverting
(MCP14A0302). These devices feature low shootthrough current, fast rise and fall times, and short
propagation delays, which make them ideal for high
switching frequency applications.
Applications
•
•
•
•
•
Switch Mode Power Supplies
Pulse Transformer Drive
Line Drivers
Level Translator
Motor and Solenoid Drive
The MCP14A0301/2 family of devices offers enhanced
control with Enable functionality. The active-high
Enable pin can be driven low to drive the output of the
MCP14A0301/2 low, regardless of the status of the
Input pin. An integrated pull-up resistor allows the user
to leave the Enable pin floating for standard operation.
These devices are highly latch-up resistant under any
condition within their power and voltage ratings. They
can accept up to 500 mA of reverse current being
forced back into their outputs without damage or logic
upset. All terminals are fully protected against
electrostatic discharge (ESD) up to 2 kV (HBM) and
200V (MM).
Package Types
MCP14A0301
MSOP/SOIC
MCP14A0302
MSOP/SOIC
VDD 1
8 VDD
VDD 1
8 VDD
IN 2
7 OUT
IN 2
7 OUT
EN 3
6 OUT
EN 3
6 OUT
GND 4
5 GND
GND 4
5 GND
MCP14A0301
2 x 2 WDFN*
MCP14A0302
2 x 2 WDFN*
VDD 1
8 VDD
VDD 1
IN 2
7 OUT
IN 2
6 OUT
5 GND
GND 4
EN 3
GND 4
EP*
9
EN 3
8 VDD
EP*
9
7 OUT
6 OUT
5 GND
* Includes Exposed Thermal Pad (EP); see Table 3-1.
2017 Microchip Technology Inc.
DS20005807A-page 1
MCP14A0301/2
Functional Block Diagram
VDD
Internal
Pull-Up
Enable
VREF
GND
Inverting
Output
VDD
Input
VREF
GND
DS20005807A-page 2
Non-Inverting
MCP14A0301 Inverting
MCP14A0302 Non-Inverting
2017 Microchip Technology Inc.
MCP14A0301/2
1.0
ELECTRICAL CHARACTERISTICS
1.1
Electrical Specifications
Absolute Maximum Ratings †
VDD, Supply Voltage..................................................................................................................................................+20V
VIN, Input Voltage ............................................................................................................... (VDD + 0.3V) to (GND – 0.3V)
VEN, Enable Voltage........................................................................................................... (VDD + 0.3V) to (GND – 0.3V)
Package Power Dissipation (TA = +50°C)
8L MSOP .................................................................................................................................................0.58W
8L SOIC ...................................................................................................................................................0.90W
8L 2 X 2 WDFN ........................................................................................................................................1.63W
ESD protection on all pins ..............................................................................................................................2 kV (HBM)
ESD protection on all pins .............................................................................................................................. 200V (MM)
† Notice: Stresses above those listed under “Maximum ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at those or any other conditions above those indicated in
the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.
2017 Microchip Technology Inc.
DS20005807A-page 3
MCP14A0301/2
TABLE 1-1:
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, TA = +25°C, with 4.5V VDD 18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input Voltage Range
VIN
GND – 0.3V
—
VDD + 0.3
V
Logic ‘1’ High Input Voltage
VIH
2.0
1.6
—
V
Logic ‘0’ Low Input Voltage
VIL
—
1.3
0.8
V
VHYST(IN)
—
0.3
—
V
IIN
-1
—
+1
µA
Enable Voltage Range
VEN
GND – 0.3V
—
VDD + 0.3
V
Logic ‘1’ High Enable Voltage
VEH
2.0
1.6
—
V
Logic ‘0’ Low Enable Voltage
VEL
—
1.3
0.8
V
VHYST(EN)
—
0.3
—
V
RENBL
—
1.5
—
MΩ
Enable Input Current
IEN
—
12
—
µA
VDD = 18V, ENB = AGND
Propagation Delay
tD3
—
15
22
ns
VDD = 18V, VEN = 5V, see
Figure 4-3, (Note 1)
Propagation Delay
tD4
—
18
25
ns
VDD = 18V, VEN = 5V, see
Figure 4-3, (Note 1)
VOH
VDD – 0.025
—
—
V
IOUT = 0A
Low Output Voltage
VOL
—
—
0.025
V
IOUT = 0A
Output Resistance, High
ROH
—
2.2
3.3
Ω
IOUT = 10 mA, VDD = 18V
Output Resistance, Low
ROL
—
1.5
2.3
Ω
IOUT = 10 mA, VDD = 18V
Peak Output Current
IPK
—
3.0
—
A
VDD = 18V (Note 1)
Latch-Up Protection Withstand
Reverse Current
IREV
0.5
—
—
A
Duty cycle 2%, t 300 µs
(Note 1)
Rise Time
tR
—
13
18
ns
VDD = 18V, CL = 1800 pF, see
Figure 4-1, Figure 4-2
Fall Time
tF
—
12
17
ns
VDD = 18V, CL = 1800 pF, see
Figure 4-1, Figure 4-2
Delay Time
tD1
—
15
22
ns
VDD = 18V, VIN = 5V, see
Figure 4-1, Figure 4-2
tD2
—
18
25
ns
VDD = 18V, VIN = 5V, see
Figure 4-1, Figure 4-2
VDD
4.5
—
18
V
Input
Input Voltage Hysteresis
Input Current
0V VIN VDD
Enable
Enable Voltage Hysteresis
Enable Pin Pull-Up Resistance
VDD = 18V, ENB = AGND
Output
High Output Voltage
Switching Time (Note 1)
Power Supply
Supply Voltage
Power Supply Current
Note 1:
IDD
—
360
580
µA
VIN = 3V, VEN = 3V
IDD
—
360
580
µA
VIN = 0V, VEN = 3V
IDD
—
360
580
µA
VIN = 3V, VEN = 0V
IDD
—
360
580
µA
VIN = 0V, VEN = 0V
Tested during characterization, not production tested.
DS20005807A-page 4
2017 Microchip Technology Inc.
MCP14A0301/2
TABLE 1-2:
DC CHARACTERISTICS (OVER OPERATING TEMP. RANGE)
Electrical Specifications: Unless otherwise indicated, over the operating range with 4.5V VDD 18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Input Voltage Range
VIN
GND – 0.3V
—
VDD + 0.3
V
Logic ‘1’ High Input Voltage
VIH
2.0
1.6
—
V
Logic ‘0’ Low Input Voltage
VIL
—
1.3
0.8
V
VHYST(IN)
—
0.3
—
V
IIN
–10
—
+10
µA
Enable Voltage Range
VEN
GND – 0.3V
—
VDD + 0.3
V
Logic ‘1’ High Enable Voltage
VEH
2.0
1.6
—
V
Logic ‘0’ Low Enable Voltage
VEL
—
1.3
0.8
V
Conditions
Input
Input Voltage Hysteresis
Input Current
0V VIN VDD
Enable
Enable Voltage Hysteresis
VHYST(EN)
—
0.3
—
V
Enable Input Current
IEN
—
12
—
µA
VDD = 18V, ENB = AGND
Propagation Delay
tD3
—
20
27
ns
VDD = 18V, VEN = 5V, TA = +125°C,
see Figure 4-3
Propagation Delay
tD4
—
24
31
ns
VDD = 18V, VEN = 5V, TA = +125°C,
see Figure 4-3
High Output Voltage
VOH
VDD –
0.025
—
—
V
DC Test
Low Output Voltage
VOL
—
—
0.025
V
DC Test
Output Resistance, High
ROH
—
—
4.1
Ω
IOUT = 10 mA, VDD = 18V
Output Resistance, Low
ROL
—
—
3.3
Ω
IOUT = 10 mA, VDD = 18V
Output
Note 1:
Tested during characterization, not production tested.
2017 Microchip Technology Inc.
DS20005807A-page 5
MCP14A0301/2
TABLE 1-2:
DC CHARACTERISTICS (OVER OPERATING TEMP. RANGE) (CONTINUED)
Electrical Specifications: Unless otherwise indicated, over the operating range with 4.5V VDD 18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Rise Time
tR
—
15
20
ns
VDD = 18V, CL = 1800 pF,
TA = +125°C, see Figure 4-1,
Figure 4-2
Fall Time
tF
—
13
18
ns
VDD = 18V, CL = 1800 pF,
TA = +125°C, see Figure 4-1,
Figure 4-2
Delay Time
tD1
—
20
27
ns
VDD = 18V, VIN = 5V, TA = +125°C,
see Figure 4-1, Figure 4-2
tD2
—
24
31
VDD
4.5
—
18
V
Switching Time (Note 1)
VDD = 18V, VIN = 5V, TA = +125°C,
see Figure 4-1, Figure 4-2
Power Supply
Supply Voltage
Power Supply Current
Note 1:
1.2
IDD
—
—
800
uA
VIN = 3V, VEN = 3V
IDD
—
—
800
uA
VIN = 0V, VEN = 3V
IDD
—
—
800
uA
VIN = 3V, VEN = 0V
IDD
—
—
800
uA
VIN = 0V, VEN = 0V
Tested during characterization, not production tested.
Temperature Characteristics
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V VDD 18V
Parameter
Sym.
Min.
Typ.
Max.
Units
Comments
Temperature Ranges
Specified Temperature Range
TA
-40
—
+125
°C
Maximum Junction Temperature
TJ
—
—
+150
°C
Storage Temperature Range
TA
-65
—
+150
°C
Junction-to-Ambient Thermal Resistance, 8LD MSOP
JA
—
172
—
°C/W
Note 1
Junction-to-Ambient Thermal Resistance, 8LD SOIC
JA
—
111
—
°C/W
Note 1
Junction-to-Ambient Thermal Resistance, 8LD WDFN
JA
—
61
—
°C/W
Note 1
Junction-to-Top Characterization Parameter, 8LD MSOP
JT
—
7
—
°C/W
Note 1
Junction-to-Top Characterization Parameter, 8LD SOIC
JT
—
12
—
°C/W
Note 1
Junction-to-Top Characterization Parameter, 8LD WDFN
JT
—
1.6
—
°C/W
Note 1
Junction-to-Board Characterization Parameter, 8LD MSOP
JB
—
130
—
°C/W
Note 1
Junction-to-Board Characterization Parameter, 8LD SOIC
JB
—
76
—
°C/W
Note 1
Junction-to-Board Characterization Parameter, 8LD WDFN
JB
—
29
—
°C/W
Note 1
Package Thermal Resistances
Note 1:
Parameter is determined using High K 2S2P 4-Layer board as described in JESD 51-7, as well as JESD
51-5 for packages with exposed pads
DS20005807A-page 6
2017 Microchip Technology Inc.
MCP14A0301/2
2.0
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V.
160
Rise Time (ns)
120
100
Fall Time (ns)
10000 pF
6800 pF
4700 pF
3300 pF
1800 pF
1000 pF
140
80
60
40
20
0
4
6
FIGURE 2-1:
Voltage.
8
10
12
14
Supply Voltage (V)
16
120
Time (ns)
Rise Time (ns)
18V
10000
FIGURE 2-4:
Load.
140
5V
80
12V
40
18V
20
0
1000
12V
Capacitive Load (pF)
160
60
5V
18
Rise Time vs. Supply
100
100
90
80
70
60
50
40
30
20
10
0
1000
28
26
24
22
20
18
16
14
12
10
8
Fall Time vs. Capacitive
VDD = 18V
tR, 4700 pF
tF, 4700 pF
tR, 1800 pF
tF, 1800 pF
-40 -25 -10
10000
Capacitive Load (pF)
Rise Time vs. Capacitive
100
90
80
70
60
50
40
30
20
10
0
FIGURE 2-3:
Voltage.
6
8
10
12
14
Supply Voltage (V)
16
Fall Time vs. Supply
2017 Microchip Technology Inc.
20 35 50 65 80 95 110 125
Temperature (°C)
Rise and Fall Time vs.
10000
10000 pF
6800 pF
4700 pF
3300 pF
1800 pF
1000 pF
4
FIGURE 2-5:
Temperature.
Crossover Current (µA)
Fall Time (ns)
FIGURE 2-2:
Load.
5
18
1 MHz
500 kHz
200 kHz
100 kHz
50 kHz
1000
100
10
4
FIGURE 2-6:
Supply Voltage.
6
8
10
12
14
Supply Voltage (V)
16
18
Crossover Current vs.
DS20005807A-page 7
MCP14A0301/2
Input Propagation Delay (ns)
50
Enable Propagation Delay (ns)
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V.
VIN = 5V
45
40
35
30
tD2
25
20
tD1
15
10
4
6
8
FIGURE 2-7:
Supply Voltage.
10
12
14
Supply Voltage (V)
16
Input Propagation Delay vs.
Enable Propagation Delay (ns)
Input Propogation Delay (ns)
20
tD2
15
tD1
10
18
FIGURE 2-8:
Input Propagation Delay
Time vs. Input Amplitude.
Input Propagation Delay (ns)
24
VDD = 18V
22
20
tD2
18
16
tD1
14
12
-40 -25 -10
FIGURE 2-9:
Temperature.
DS20005807A-page 8
5
30
20 35 50 65 80 95 110 125
Temperature (°C)
Input Propagation Delay vs.
tD4
25
20
tD3
15
10
6
8
10
12
14
Supply Voltage (V)
16
18
30
VDD = 18V
25
20
tD4
15
tD3
10
2
4
6
8
10
12
14
Enable Voltage Amplitude (V)
16
18
FIGURE 2-11:
Enable Propagation Delay
Time vs. Enable Voltage Amplitude.
Enable Propagation Delay (ns)
16
35
FIGURE 2-10:
Enable Propagation Delay
vs. Supply Voltage.
25
6
8
10
12
14
Input Voltage Amplitude (V)
40
4
VDD = 18V
4
VEN = 5V
45
18
30
2
50
24
22
VDD = 18V
VEN = 5V
tD4
20
18
16
tD3
14
12
-40 -25 -10
FIGURE 2-12:
vs. Temperature.
5
20 35 50 65 80 95 110 125
Temperature (°C)
Enable Propagation Delay
2017 Microchip Technology Inc.
MCP14A0301/2
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V.
1.8
1.7
Input Threshold (V)
Quiescent Current (µA)
400
350
300
VIH
1.6
1.5
1.4
1.3
VIL
1.2
1.1
250
1
4
6
8
10
12
14
Supply Voltage (V)
16
FIGURE 2-13:
Quiescent Supply Current
vs. Supply Voltage.
VDD = 18V
Enable Threshold (V)
350
300
16
18
Input Threshold vs Supply
VDD = 18V
VEH
1.6
1.5
1.4
1.3
1.2
VEL
1.1
1
250
-40 -25 -10
FIGURE 2-14:
vs. Temperature.
5
-40 -25 -10
20 35 50 65 80 95 110 125
Temperature (°C)
Quiescent Supply Current
5
FIGURE 2-17:
Temperature.
20 35 50 65 80 95 110 125
Temperature (°C)
Enable Threshold vs.
1.8
1.8
VDD = 18V
1.7
Enable Threshold (V)
Input Threshold (V)
10
12
14
Supply Voltage (V)
1.7
400
VIH
1.6
1.5
1.4
1.3
1.2
8
FIGURE 2-16:
Voltage.
450
1.7
6
1.8
500
Quiescent Current (µA)
4
18
VIL
1.1
VEH
1.6
1.5
1.4
1.3
VEL
1.2
1.1
1
-40 -25 -10
FIGURE 2-15:
Temperature.
5
20 35 50 65 80 95 110 125
Temperature (°C)
Input Threshold vs.
2017 Microchip Technology Inc.
1
4
6
FIGURE 2-18:
Voltage.
8
10
12
14
Supply Voltage (V)
16
18
Enable Threshold vs Supply
DS20005807A-page 9
MCP14A0301/2
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V.
VIN = 0V (MCP14A0301)
VIN = 5V (MCP14A0302)
Supply Current (mA)
ROH - Output Resistance ()
6
5.5
5
TA = +125°C
4.5
4
3.5
TA = +25°C
3
2.5
2
4
6
8
10
12
14
Supply Voltage (V)
16
18
FIGURE 2-19:
Output Resistance (Output
High) vs. Supply Voltage.
50
45
40
35
30
25
20
15
10
5
0
VDD = 12V
1 MHz
500 kHz
200 kHz
100 kHz
50 kHz
10 kHz
100
1000
Capacitive Load (pF)
10000
FIGURE 2-22:
Supply Current vs.
Capacitive Load (VDD = 12V).
VIN = 5V (MCP14A0301)
VIN = 0V (MCP14A0302)
3.5
30
VDD = 6V
Supply Current (mA)
ROL - Output Resistance ()
4
TA = +125°C
3
2.5
2
TA = +25°C
1.5
1
6
8
10
12
14
Supply Voltage (V)
16
18
FIGURE 2-20:
Output Resistance (Output
Low) vs. Supply Voltage.
15
10
5
100
VDD = 18V
1 MHz
500 kHz
200 kHz
100 kHz
50 kHz
10 kHz
100
1000
Capacitive Load (pF)
FIGURE 2-21:
Supply Current vs.
Capacitive Load (VDD = 18V).
DS20005807A-page 10
10000
1000
Capacitive Load (pF)
10000
FIGURE 2-23:
Supply Current vs.
Capacitive Load (VDD = 6V).
Supply Current (mA)
Supply Current (mA)
1 MHz
500 kHz
200 kHz
100 kHz
50 kHz
10 kHz
20
0
4
100
90
80
70
60
50
40
30
20
10
0
25
100
90
80
70
60
50
40
30
20
10
0
VDD = 18V
10000 pF
6800 pF
3300 pF
1000 pF
470 pF
100 pF
10
100
Switching Frequency (kHz)
1000
FIGURE 2-24:
Supply Current vs.
Frequency (VDD = 18V).
2017 Microchip Technology Inc.
MCP14A0301/2
Supply Current (mA)
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V.
50
45
40
35
30
25
20
15
10
5
0
VDD = 12V
10000 pF
6800 pF
3300 pF
1000 pF
470 pF
100 pF
10
100
Switching Frequency (kHz)
1000
FIGURE 2-25:
Supply Current vs.
Frequency (VDD = 12V).
Supply Current (mA)
30
VDD = 6V
25
10000 pF
6800 pF
3300 pF
1000 pF
470 pF
100 pF
20
15
10
5
0
10
100
Switching Frequency (kHz)
1000
FIGURE 2-26:
Supply Current vs.
Frequency (VDD = 6V).
Enable Current (µA)
14
13
12
11
10
9
8
4
6
FIGURE 2-27:
Voltage.
8
10
12
14
Supply Voltage (V)
16
18
Enable Current vs. Supply
2017 Microchip Technology Inc.
DS20005807A-page 11
MCP14A0301/2
NOTES:
DS20005807A-page 12
2017 Microchip Technology Inc.
MCP14A0301/2
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
MCP14A0301/2
Symbol
Description
8L 2 x 2 WDFN
8L MSOP/SOIC
1
1
VDD
Supply Input
2
2
IN
Control Input
3
3
EN
Device Enable
4
4
GND
Power Ground
5
5
GND
Power Ground
6
6
OUT/OUT
7
7
OUT/OUT
8
8
VDD
Supply Input
EP
—
EP
Exposed Thermal Pad (GND)
3.1
Supply Input Pin (VDD)
VDD is the bias supply input for the MOSFET driver and
has a voltage range of 4.5V to 18V. This input must be
decoupled to ground with a local capacitor. This bypass
capacitor provides a localized low-impedance path for
the peak currents that are provided to the load.
3.2
Push-Pull Output
3.5
Output Pin (OUT, OUT)
The Output is a CMOS push-pull output that is capable
of sourcing and sinking 3.0A of peak current
(VDD = 18V). The low output impedance ensures the
gate of the external MOSFET stays in the intended
state even during large transients. This output also has
a reverse current latch-up rating of 500 mA.
Control Input Pin (IN)
The MOSFET driver Control Input is a high-impedance
input featuring low threshold levels. The Input also has
hysteresis between the high and low input levels, allowing them to be driven from slow rising and falling signals and to provide noise immunity.
3.3
Push-Pull Output
3.6
Exposed Metal Pad Pin (EP)
The exposed metal pad of the WDFN package is internally connected to GND. Therefore, this pad should be
connected to a Ground plane to aid in heat removal
from the package.
Device Enable Pin (EN)
The MOSFET driver Device Enable is a highimpedance input featuring low threshold levels. The
Enable input also has hysteresis between the high and
low input levels, allowing them to be driven from slow
rising and falling signals and to provide noise immunity.
Driving the Enable pin below the threshold will disable
the output of the device, pulling OUT/OUT low,
regardless of the status of the Input pin. Driving the
Enable pin above the threshold allows normal
operation of the OUT/OUT pin based on the status of
the Input pin. The Enable pin utilizes an internal pull up
resistor, allowing the pin to be left floating for standard
driver operation.
3.4
Power Ground Pin (GND)
GND is the device return pin for the input and output
stages. The GND pin should have a low-impedance
connection to the bias supply source return. When the
capacitive load is being discharged, high peak currents
will flow out of the ground pin.
2017 Microchip Technology Inc.
DS20005807A-page 13
MCP14A0301/2
NOTES:
DS20005807A-page 14
2017 Microchip Technology Inc.
MCP14A0301/2
4.0
APPLICATION INFORMATION
4.1
General Information
VDD = 18V
MOSFET drivers are high-speed, high-current devices
that are intended to source/sink high-peak currents to
charge/discharge the gate capacitance of external
MOSFETs or Insulated-Gate Bipolar Transistors
(IGBTs). In high-frequency switching power supplies,
the Pulse-Width Modulation (PWM) controller may not
have the drive capability to directly drive the power
MOSFET. A MOSFET driver such as the
MCP14A0301/2 family can be used to provide
additional source/sink current capability.
4.2
MOSFET Driver Timing
1 µF
Input
MCP14A0302
5V
VIH (Typ.)
0V
tD2
tF
90%
10%
0V
FIGURE 4-2:
Waveform.
0.1 µF
Input
Output
CL = 1800 pF
MCP14A0301
5V
Input
VIL (Typ.)
tD2
18V
tR
90%
Output
10%
0V
Input Signal: tRISE = tFALL 10 ns,
100 Hz, 0-5V Square Wave
Inverting Driver Timing
2017 Microchip Technology Inc.
tR
Output
4.3
FIGURE 4-1:
Waveform.
tD1
Input Signal: tRISE = tFALL 10 ns,
100 Hz, 0-5V Square Wave
1 µF
tF
VIL (Typ.)
18V
VDD = 18V
tD1
Output
CL = 1800 pF
Input
The ability of a MOSFET driver to transition from a fullyoff state to a fully-on state is characterized by the
driver’s rise time (tR), fall time (tF) and propagation
delays (tD1 and tD2). Figure 4-1 and Figure 4-2 show
the test circuit and timing waveform used to verify the
MCP14A0301/2 timing.
VIH (Typ.)
0V
0.1 µF
Noninverting Driver Timing
Enable Function
The enable pin (EN) provides additional control of the
output pin (OUT). This pin is active high and is
internally pulled up to VDD so that the pin can be left
floating to provide standard MOSFET driver operation.
When the enable pin’s input voltage is above the
enable pin high voltage threshold, (VEN_H), the output
is enabled and allowed to react to the status of the Input
pin. However, when the voltage applied to the Enable
pin falls below the low threshold voltage (VEN_L), the
driver’s output is disabled and doesn't respond to
changes in the status of the Input pin. When the driver
is disabled, the output is pulled down to a low state.
Refer to Table 4-1 for enable pin logic. The threshold
voltage levels for the Enable pin are similar to the
threshold voltage levels of the Input pin. Hysteresis is
provided to help increase the noise immunity of the
enable function, avoiding false triggers of the enable
signal during driver switching.
There are propagation delays associated with the
driver receiving an enable signal and the output
reacting. These propagation delays, tD3 and tD4, are
graphically represented in Figure 4-3.
DS20005807A-page 15
MCP14A0301/2
TABLE 4-1:
4.6
ENABLE PIN LOGIC
MCP14A0301
OUT
MCP14A0302
OUT
H
L
H
L
H
L
X
L
L
ENB
IN
H
H
L
Power Dissipation
The total internal power dissipation in a MOSFET driver
is the summation of three separate power dissipation
elements, as shown in Equation 4-1.
EQUATION 4-1:
P T = P L + P Q + P CC
Where:
5V
Enable
VEH (Typ.)
tD3
tD4
18V
90%
10%
0V
Enable Signal: tRISE = tFALL 10 ns,
100 Hz, 0-5V Square Wave
FIGURE 4-3:
Enable Timing Waveform.
Decoupling Capacitors
Careful Printed Circuit Board (PCB) layout and
decoupling capacitors are required when using power
MOSFET drivers. Large current is required to charge
and discharge capacitive loads quickly. For example,
approximately 720 mA are needed to charge a 1000 pF
load with 18V in 25 ns.
To operate the MOSFET driver over a wide frequency
range with low supply impedance, it is recommended to
place 1.0 µF and 0.1 µF low ESR ceramic capacitors in
parallel between the driver VDD and GND. These
capacitors should be placed close to the driver to
minimize circuit board parasitics and provide a local
source for the required current.
4.5
Total power dissipation
PL
=
Load power dissipation
=
Quiescent power dissipation
PCC
=
Operating power dissipation
4.6.1
Output
4.4
=
PQ
VEL (Typ.)
0V
PT
PCB Layout Considerations
Proper PCB layout is important in high-current, fastswitching circuits to provide proper device operation
and robustness of design. Improper component
placement may cause errant switching, excessive
voltage ringing or circuit latch-up. The PCB trace loop
length and inductance should be minimized by the use
of ground planes or traces under the MOSFET gate
drive signal. Separate analog and power grounds and
local driver decoupling should also be used.
CAPACITIVE LOAD DISSIPATION
The power dissipation caused by a capacitive load is a
direct function of the frequency, total capacitive load
and supply voltage. The power lost in the MOSFET
driver for a complete charging and discharging cycle of
a MOSFET is shown in Equation 4-2.
EQUATION 4-2:
P L = f C T V DD
Where:
2
f
=
Switching frequency
CT
=
Total load capacitance
VDD
=
MOSFET driver supply voltage
4.6.2
QUIESCENT POWER DISSIPATION
The power dissipation associated with the quiescent
current draw depends on the state of the Input and
Enable
pins.
See
Section 1.0
“Electrical
Characteristics” for typical quiescent current draw
values in different operating states. The quiescent
power dissipation is shown in Equation 4-3.
EQUATION 4-3:
P Q = I QH D + I QL 1 – D V DD
Where:
IQH
=
Quiescent current in the High state
D
=
Duty cycle
IQL
=
Quiescent current in the Low state
VDD
=
MOSFET driver supply voltage
Placing a ground plane beneath the MCP14A0301/2
devices will help as a radiated noise shield, as well as
providing some heat sinking for power dissipated within
the device.
DS20005807A-page 16
2017 Microchip Technology Inc.
MCP14A0301/2
4.6.3
OPERATING POWER DISSIPATION
The operating power dissipation occurs each time the
MOSFET driver output transitions because, for a very
short period of time, both MOSFETs in the output stage
are on simultaneously. This cross-conduction current
leads to a power dissipation described in Equation 4-4.
EQUATION 4-4:
P CC =
Where:
V DD I CO
ICO
=
Crossover Current
VDD
=
MOSFET driver supply voltage
2017 Microchip Technology Inc.
DS20005807A-page 17
MCP14A0301/2
NOTES:
DS20005807A-page 18
2017 Microchip Technology Inc.
MCP14A0301/2
5.0
PACKAGING INFORMATION
5.1
Package Marking Information
8-Lead MSOP
Example:
Part Number
Code
MCP14A0301-E/MS
A0301
MCP14A0301T-E/MS
A0301
MCP14A0302-E/MS
A0302
MCP14A0302T-E/MS
A0302
8-Lead SOIC
Example:
Part Number
Code
MCP14A0301-E/SN
14A0301
MCP14A0301T-E/SN
14A0301
MCP14A0302-E/SN
14A0302
MCP14A0302T-E/SN
14A0302
8-Lead WDFN
e3
*
Note:
14A0301
e3 1721
256
Example:
Part Number
Legend: XX...X
Y
YY
WW
NNN
A0301
721256
Code
MCP14A0301T-E/KBA
AAA
MCP14A0302T-E/KBA
AAB
AAA
256
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will be carried over
to the next line, thus limiting the number of available characters for customer-specific
information.
2017 Microchip Technology Inc.
DS20005807A-page 19
MCP14A0301/2
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20005807A-page 20
2017 Microchip Technology Inc.
MCP14A0301/2
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2017 Microchip Technology Inc.
DS20005807A-page 21
MCP14A0301/2
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20005807A-page 22
2017 Microchip Technology Inc.
MCP14A0301/2
8-Lead Plastic Small Outline (SN) - Narrow, 3.90 mm (.150 In.) Body [SOIC]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2X
0.10 C A–B
D
A
D
NOTE 5
N
E
2
E1
2
E1
E
NOTE 1
2
1
e
B
NOTE 5
NX b
0.25
C A–B D
TOP VIEW
0.10 C
C
A A2
SEATING
PLANE
8X
A1
SIDE VIEW
0.10 C
h
R0.13
h
R0.13
H
SEE VIEW C
VIEW A–A
0.23
L
(L1)
VIEW C
Microchip Technology Drawing No. C04-057-SN Rev D Sheet 1 of 2
2017 Microchip Technology Inc.
DS20005807A-page 23
MCP14A0301/2
8-Lead Plastic Small Outline (SN) - Narrow, 3.90 mm (.150 In.) Body [SOIC]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units
Dimension Limits
Number of Pins
N
e
Pitch
Overall Height
A
Molded Package Thickness
A2
§
Standoff
A1
Overall Width
E
Molded Package Width
E1
Overall Length
D
Chamfer (Optional)
h
Foot Length
L
L1
Footprint
Foot Angle
c
Lead Thickness
b
Lead Width
Mold Draft Angle Top
Mold Draft Angle Bottom
MIN
1.25
0.10
0.25
0.40
0°
0.17
0.31
5°
5°
MILLIMETERS
NOM
8
1.27 BSC
6.00 BSC
3.90 BSC
4.90 BSC
1.04 REF
-
MAX
1.75
0.25
0.50
1.27
8°
0.25
0.51
15°
15°
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. § Significant Characteristic
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or
protrusions shall not exceed 0.15mm per side.
4. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
5. Datums A & B to be determined at Datum H.
Microchip Technology Drawing No. C04-057-SN Rev D Sheet 2 of 2
DS20005807A-page 24
2017 Microchip Technology Inc.
MCP14A0301/2
8-Lead Plastic Small Outline (SN) - Narrow, 3.90 mm Body [SOIC]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
SILK SCREEN
C
Y1
X1
E
RECOMMENDED LAND PATTERN
Units
Dimension Limits
E
Contact Pitch
Contact Pad Spacing
C
Contact Pad Width (X8)
X1
Contact Pad Length (X8)
Y1
MIN
MILLIMETERS
NOM
1.27 BSC
5.40
MAX
0.60
1.55
Notes:
1. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing C04-2057-SN Rev B
2017 Microchip Technology Inc.
DS20005807A-page 25
MCP14A0301/2
8-Lead Very, Very Thin Dual FlatPack, No Lead Package (KBA) - 2x2 mm Body [WDFN]
Wettable Flanks (Stepped); Saw Singulated
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
D
A
B
N
(DATUM A)
(DATUM B)
E
NOTE 1
2X
0.05 C
1
2X
2
0.05 C
TOP VIEW
0.05 C
C
SEATING
PLANE
(A4)
A
(A3)
8X
A1
0.05 C
SIDE VIEW
0.10
C A B
D2
1
2
L1
0.10
C A B
NOTE 1
E2
K
L
N
8X b
e
BOTTOM VIEW
0.10
0.05
C A B
C
Microchip Technology Drawing C04-1218A Sheet 1 of 2
DS20005807A-page 26
2017 Microchip Technology Inc.
MCP14A0301/2
8-Lead Very, Very Thin Dual FlatPack, No Lead Package (KBA) - 2x2 mm Body [WDFN]
Wettable Flanks (Stepped); Saw Singulated
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units
Dimension Limits
N
Number of Terminals
e
Pitch
A
Overall Height
Standoff
A1
A3
Terminal Thickness
Step Height
A4
Overall Length
D
Exposed Pad Length
D2
E
Overall Width
E2
Exposed Pad Width
b
Terminal Width
L
Terminal Length
Step Length
L1
K
Terminal-to-Exposed-Pad
MIN
0.70
0.00
1.50
0.80
0.20
0.20
0.20
MILLIMETERS
NOM
8
0.50 BSC
0.75
0.02
0.203 REF
0.100 REF
2.00 BSC
1.60
2.00 BSC
0.90
0.25
0.30
0.050 REF
-
MAX
0.80
0.05
1.70
1.00
0.30
0.40
-
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Package is saw singulated
3. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Microchip Technology Drawing C04-1218A Sheet 2 of 2
2017 Microchip Technology Inc.
DS20005807A-page 27
MCP14A0301/2
8-Lead Very, Very Thin Dual FlatPack, No Lead Package (KBA) - 2x2 mm Body [WDFN]
Wettable Flanks (Stepped); Saw Singulated
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
X2
EV
8
ØV
C
G1
Y2
Y1
1
2
SILK SCREEN
X1
E
RECOMMENDED LAND PATTERN
Units
Dimension Limits
E
Contact Pitch
Optional Center Pad Width
Y2
Optional Center Pad Length
X2
Contact Pad Spacing
C
Contact Pad Width (X8)
X1
Contact Pad Length (X8)
Y1
Contact Pad to Center Pad (X20)
G1
Thermal Via Diameter
V
Thermal Via Pitch
EV
MIN
MILLIMETERS
NOM
0.50 BSC
MAX
1.00
1.70
2.10
0.30
0.70
0.20
0.30
1.00
Notes:
1. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
2. For best soldering results, thermal vias, if used, should be filled or tented to avoid solder loss during
reflow process
Microchip Technology Drawing C04-21218A
DS20005807A-page 28
2017 Microchip Technology Inc.
MCP14A0301/2
APPENDIX A:
REVISION HISTORY
Revision A (July 2017)
• Original Release of this Document.
2017 Microchip Technology Inc.
DS20005807A-page 29
MCP14A0301/2
NOTES:
DS20005807A-page 30
2017 Microchip Technology Inc.
MCP14A0301/2
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
[X](1)
–X
Device Tape and Reel Temperature
Range
/XX
Package
Device:
MCP14A0301T: High-Speed MOSFET Driver
(Tape and Reel)
MCP14A0302T: High-Speed MOSFET Driver
(Tape and Reel)
Temperature Range:
E
Package:
MS
Examples:
a) MCP14A0301T-E/MS: Tape and Reel,
Extended temperature,
8LD MSOP package
b) MCP14A0302T-E/SN: Tape and Reel,
Extended temperature,
8LD SOIC package
c) MCP14A0302T-E/KBA: Tape and Reel
Extended temperature,
8LD WDFN package
= -40°C to +125°C (Extended)
Note 1:
= Plastic Micro Small Outline Package (MSOP),8-lead
8-lead
SN = Plastic Small Outline Package (SOIC), 8-lead
KBA = Plastic Dual Flat, No Lead Package, Wettable Flanks
2 x 2 mm Body (WDFN) 8-lead
2017 Microchip Technology Inc.
Tape and Reel identifier only appears in the
catalog part number description. This
identifier is used for ordering purposes and
is not printed on the device package. Check
with your Microchip Sales Office for package
availability with the Tape and Reel option.
DS20005807A-page 31
MCP14A0301/2
NOTES:
DS20005807A-page 32
2017 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
Trademarks
The Microchip name and logo, the Microchip logo, AnyRate, AVR,
AVR logo, AVR Freaks, BeaconThings, BitCloud, CryptoMemory,
CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KEELOQ,
KEELOQ logo, Kleer, LANCheck, LINK MD, maXStylus,
maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB,
OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip
Designer, QTouch, RightTouch, SAM-BA, SpyNIC, SST, SST
Logo, SuperFlash, tinyAVR, UNI/O, and XMEGA are registered
trademarks of Microchip Technology Incorporated in the U.S.A.
and other countries.
ClockWorks, The Embedded Control Solutions Company,
EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS,
mTouch, Precision Edge, and Quiet-Wire are registered
trademarks of Microchip Technology Incorporated in the U.S.A.
Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any
Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo,
CodeGuard, CryptoAuthentication, CryptoCompanion,
CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average
Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial
Programming, ICSP, Inter-Chip Connectivity, JitterBlocker,
KleerNet, KleerNet logo, Mindi, MiWi, motorBench, MPASM, MPF,
MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach,
Omniscient Code Generation, PICDEM, PICDEM.net, PICkit,
PICtail, PureSilicon, QMatrix, RightTouch logo, REAL ICE, Ripple
Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI,
SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC,
USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and
ZENA are trademarks of Microchip Technology Incorporated in the
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SQTP is a service mark of Microchip Technology Incorporated in
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Silicon Storage Technology is a registered trademark of Microchip
Technology Inc. in other countries.
GestIC is a registered trademark of Microchip Technology
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Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2017, Microchip Technology Incorporated, All Rights Reserved.
ISBN: 978-1-5224-1886-3
== ISO/TS 16949 ==
2017 Microchip Technology Inc.
DS20005807A-page 33
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Tel: 951-273-7800
Raleigh, NC
Tel: 919-844-7510
New York, NY
Tel: 631-435-6000
San Jose, CA
Tel: 408-735-9110
Tel: 408-436-4270
Canada - Toronto
Tel: 905-695-1980
Fax: 905-695-2078
DS20005807A-page 34
China - Dongguan
Tel: 86-769-8702-9880
China - Guangzhou
Tel: 86-20-8755-8029
China - Hangzhou
Tel: 86-571-8792-8115
Fax: 86-571-8792-8116
China - Hong Kong SAR
Tel: 852-2943-5100
Fax: 852-2401-3431
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
China - Shanghai
Tel: 86-21-3326-8000
Fax: 86-21-3326-8021
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
China - Shenzhen
Tel: 86-755-8864-2200
Fax: 86-755-8203-1760
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
India - Pune
Tel: 91-20-3019-1500
Japan - Osaka
Tel: 81-6-6152-7160
Fax: 81-6-6152-9310
Japan - Tokyo
Tel: 81-3-6880- 3770
Fax: 81-3-6880-3771
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
Taiwan - Kaohsiung
Tel: 886-7-213-7830
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
France - Saint Cloud
Tel: 33-1-30-60-70-00
Germany - Garching
Tel: 49-8931-9700
Germany - Haan
Tel: 49-2129-3766400
Germany - Heilbronn
Tel: 49-7131-67-3636
Germany - Karlsruhe
Tel: 49-721-625370
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Germany - Rosenheim
Tel: 49-8031-354-560
Israel - Ra’anana
Tel: 972-9-744-7705
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Italy - Padova
Tel: 39-049-7625286
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Norway - Trondheim
Tel: 47-7289-7561
Poland - Warsaw
Tel: 48-22-3325737
Romania - Bucharest
Tel: 40-21-407-87-50
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
Sweden - Gothenberg
Tel: 46-31-704-60-40
Sweden - Stockholm
Tel: 46-8-5090-4654
UK - Wokingham
Tel: 44-118-921-5800
Fax: 44-118-921-5820
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11/07/16
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