MCP16331
High-Voltage Input Integrated Switch Step-Down Regulator
Features
General Description
•
•
•
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•
The MCP16331 is a highly integrated, high-efficiency,
fixed frequency, step-down DC-DC converter in a popular
6-pin SOT-23 or 8-pin 2x3 TDFN package that operates
from input voltage sources up to 50V. Integrated features
include a high-side switch, fixed frequency Peak CurrentMode control, internal compensation, peak current limit
and overtemperature protection. Minimal external components are necessary to develop a complete step-down
DC-DC converter power supply.
High converter efficiency is achieved by integrating the
current-limited, low-resistance, high-speed N-Channel
MOSFET and associated drive circuitry. High switching
frequency minimizes the size of external filtering
components, resulting in a small solution size.
The MCP16331 can supply 500 mA of continuous
current while regulating the output voltage from 2.0V to
24V. An integrated, high-performance Peak CurrentMode architecture keeps the output voltage tightly regulated, even during input voltage steps and output current
transient conditions that are common in power systems.
The EN input is used to turn the device on and off.
While off, only a few µA of current are consumed from
the input for power shedding and load distribution
applications. This pin is internally pulled up, so the
device will start, even if the EN pin is left floating.
Output voltage is set with an external resistor divider.
The MCP16331 is offered in a space-saving 6-lead
SOT-23 and 8-lead 2x3 TDFN surface mount package.
•
•
•
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•
Up to 96% Efficiency
Input Voltage Range: 4.4V to 50V
Output Voltage Range: 2.0V to 24V
2% Output Voltage Accuracy
Qualification: AEC-Q100 Rev. G, Grade 1
(-40°C to 125°C)
Integrated N-Channel Buck Switch: 600 m
Minimum 500 mA Output Current Over All Input
Voltage Ranges (see Figure 2-9 for Maximum
Output Current vs. VIN)
- Up to 1.2A output current at 3.3V and
5V VOUT, VIN > 12V, SOT-23 package at
+25°C ambient temperature
- Up to 0.8A output current at 12V VOUT,
VIN > 18V, SOT-23 package at
+25°C ambient temperature
500 kHz Fixed Frequency
Adjustable Output Voltage
Low Device Shutdown Current
Peak Current Mode Control
Internal Compensation
Stable with Ceramic Capacitors
Internal Soft Start
Internal Pull-up on EN
Cycle-by-Cycle Peak Current Limit
Undervoltage Lockout (UVLO): 4.1V to Start;
3.6V to Stop
Overtemperature Protection
Available Package: 6-Lead SOT-23,
8-Lead 2x3 TDFN
Applications
• PIC® MCU/dsPIC® DSC Microcontroller Bias
Supply
• 48V, 24V and 12V Industrial Input
DC-DC Conversion
• Set-Top Boxes (STB)
• DSL Cable Modems
• Automotive
• AC/DC Adapters
• SLA Battery-Powered Devices
• AC-DC Digital Control Power Source
• Power Meters
• Consumer
• Medical and Health Care
• Distributed Power Supplies
2014-2016 Microchip Technology Inc.
Package Type
MCP16331
6-Lead SOT-23
BOOST 1
6 SW
GND 2
5 VIN
VFB 3
4 EN
MCP16331
8-Lead 2x3 TDFN*
8 VIN
SW 1
EN 2
NC 3
NC 4
EP
9
7 BOOST
6 VFB
5 GND
*Includes Exposed Thermal Pad (EP); see Table 3-1.
DS20005308C-page 1
MCP16331
Typical Applications
1N4148
BOOST
SW
VIN
4.5V to 50V
VIN
CIN
2x10 µF
CBOOST
100 nF L1
15 µH
VOUT
3.3V at 500 mA
100V
Schottky
Diode
EN
COUT
2 X10 µF
20 pF
Optional
31.6 k
VFB
GND
10 k
1N4148
BOOST
SW
VIN
6.0V to 50V
VOUT
5.0V at 500 mA
COUT
2 X10 µF
100V
Schottky
Diode
52.3 k
VIN
CIN
2x10 µF
CBOOST
L1
100 nF
22 µH
EN
20 pF
Optional
VFB
GND
Note:
10 k
EN has an internal pull-up, so the device will start even if the EN pin is left floating.
100
VOUT=5V
90
Efficiency (%)
80
VOUT=3.3V
70
60
50
40
30
20
10
VIN=12V
0
10
DS20005308C-page 2
100
Output Current (mA)
1000
2014-2016 Microchip Technology Inc.
MCP16331
1.0
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at those or any other conditions above those indicated in the operational sections of this specification is
not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
VIN, SW ............................................................... -0.5V to 54V
BOOST – GND ................................................... -0.5V to 60V
BOOST – SW Voltage........................................ -0.5V to 6.0V
VFB Voltage ........................................................ -0.5V to 6.0V
EN Voltage ............................................. -0.5V to (VIN + 0.3V)
Output Short-Circuit Current ................................. Continuous
Power Dissipation ....................................... Internally Limited
Storage Temperature ....................................-65°C to +150°C
Ambient Temperature with Power Applied ......-40°C to +125°C
Operating Junction Temperature...................-40°C to +160°C
ESD Protection on All Pins:
HBM..................................................................... 4 kV
MM ......................................................................300V
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VIN = VEN = 12V, VBOOST – VSW = 3.3V,
VOUT = 3.3V, IOUT = 100 mA, L = 15 µH, COUT = CIN = 2 x 10 µF X7R Ceramic Capacitors.
Boldface specifications apply over the TA range of -40°C to +125°C.
Parameters
Input Voltage
Feedback Voltage
Sym.
Min.
Typ.
Max.
Units
VIN
4.4
—
50
V
Conditions
Note 1
VFB
0.784
0.800
0.816
V
VOUT
2.0
—
24
V
Note 1, Note 3
Feedback Voltage
Line Regulation
|VFB/VFB)/VIN|
—
0.002
0.1
%/V
VIN = 5V to 50V
Feedback Voltage
Load Regulation
|VFB/VFB|
—
0.13
0.35
%
IOUT = 50 mA to
500 mA
IFB
—
+/- 3
—
nA
Undervoltage Lockout Start
UVLOSTRT
—
4.1
4.4
V
VIN rising
Undervoltage Lockout Stop
UVLOSTOP
3
3.6
—
V
VIN falling
Undervoltage Lockout
Hysteresis
UVLOHYS
—
0.5
—
V
Switching Frequency
fSW
425
500
550
kHz
Maximum Duty Cycle
DCMAX
90
93
—
%
VIN = 5V; VFB = 0.7V;
IOUT = 100 mA
Output Voltage Adjust Range
Feedback Input Bias Current
Minimum Duty Cycle
DCMIN
—
1
—
%
Note 4
NMOS Switch-On Resistance
RDS(ON)
—
0.6
—
VBOOST – VSW = 5V,
Note 3
NMOS Switch Current Limit
IN(MAX)
—
1.3
—
A
VBOOST – VSW = 5V,
Note 3
Quiescent Current
IQ
—
1
1.7
mA
VIN = 12V; Note 2
Quiescent Current – Shutdown
IQ
—
6
10
A
VOUT = EN = 0V
IOUT
500
—
—
mA
Note 1; see Figure 2-9
Output Current
Note 1:
2:
3:
4:
The input voltage should be > output voltage + headroom voltage; higher load currents increase the input
voltage necessary for regulation. See characterization graphs for typical input to output operating voltage
range.
VBOOST supply is derived from VOUT.
Determined by characterization, not production tested.
This is ensured by design.
2014-2016 Microchip Technology Inc.
DS20005308C-page 3
MCP16331
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VIN = VEN = 12V, VBOOST – VSW = 3.3V,
VOUT = 3.3V, IOUT = 100 mA, L = 15 µH, COUT = CIN = 2 x 10 µF X7R Ceramic Capacitors.
Boldface specifications apply over the TA range of -40°C to +125°C.
Parameters
Sym.
Min.
Typ.
Max.
Units
VIH
1.9
—
—
V
EN Input Logic High
EN Input Logic Low
Conditions
VIL
—
—
0.4
V
IENLK
—
0.007
0.5
µA
VIN = EN = 5V
Soft Start Time
tSS
—
600
—
µs
EN Low-to-high,
90% of VOUT
Thermal Shutdown Die
Temperature
TSD
—
160
—
C
Note 3
TSDHYS
—
30
—
C
Note 3
EN Input Leakage Current
Die Temperature Hysteresis
Note 1:
2:
3:
4:
The input voltage should be > output voltage + headroom voltage; higher load currents increase the input
voltage necessary for regulation. See characterization graphs for typical input to output operating voltage
range.
VBOOST supply is derived from VOUT.
Determined by characterization, not production tested.
This is ensured by design.
TEMPERATURE SPECIFICATIONS
Electrical Specifications
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Operating Junction Temperature Range
TJ
-40
—
+125
°C
Storage Temperature Range
TA
-65
—
+150
°C
Maximum Junction Temperature
TJ
—
—
+160
°C
Thermal Resistance, 6L-SOT-23
JA
—
190.5
—
°C/W
EIA/JESD51-3 Standard
Thermal Resistance, 8L-2x3 TDFN
JA
—
52.5
—
°C/W
EIA/JESD51-3 Standard
Temperature Ranges
Steady State
Transient
Package Thermal Resistances
DS20005308C-page 4
2014-2016 Microchip Technology Inc.
MCP16331
2.0
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 x10 µF, L = 15 µH, VOUT = 3.3V, ILOAD = 100 mA,
TA = +25°C, 6-Lead SOT-23 package.
100
100
VIN = 6V
90
90
80
70
60
VIN = 12V
VIN = 24V
50
40
30
20
10
0
VIN = 48V
70
Efficiency (%)
Efficiency (%)
80
VIN = 48V
60
50
40
30
20
10
1
10
100
0
1000
1
IOUT (mA)
FIGURE 2-1:
IOUT.
1000
3.3V VOUT Efficiency vs.
FIGURE 2-4:
IOUT.
24V VOUT Efficiency vs.
100
90
90
VIN = 12V
80
70
VIN = 24V
60
50
VIN = 48V
40
Efficiency (%)
80
Efficiency (%)
100
IOUT (mA)
100
IOUT= 500 mA
70
60
IOUT= 100 mA
50
40
30
30
20
20
10
IOUT= 10 mA
10
0
1
10
100
0
1000
6
IOUT (mA)
FIGURE 2-2:
5V VOUT Efficiency vs. IOUT.
100
100
90
90
80
80
VIN = 48V
70
VIN = 24V
60
50
40
10
10
100
1000
FIGURE 2-3:
12V VOUT Efficiency vs. IOUT.
2014-2016 Microchip Technology Inc.
26 30
VIN (V)
34
38
42
46
50
3.3V VOUT Efficiency vs.
IOUT = 500 mA
IOUT = 100 mA
40
20
IOUT (mA)
22
50
30
10
18
60
20
1
14
70
30
0
10
FIGURE 2-5:
VIN.
Efficiency (%)
Efficiency (%)
10
IOUT = 10 mA
0
6
10
FIGURE 2-6:
14
18
22
26 30
VIN (V)
34
38
42
46
50
5V VOUT Efficiency vs. VIN.
DS20005308C-page 5
MCP16331
Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 x10 µF, L = 15 µH, VOUT = 3.3V, ILOAD = 100 mA,
TA = +25°C, 6-Lead SOT-23 package.
100
0.83
IOUT = 500 mA
90
IOUT = 100 mA
Feedback Voltage (V)
Efficiency (%)
80
70
60
50
IOUT = 10 mA
40
30
20
0.82
0.81
0.8
VIN =12V
VOUT = 3.3V
IOUT = 100 mA
0.79
10
0.78
0
14
18
22
26
FIGURE 2-7:
30
34
VIN (V)
38
42
46
-40 -25 -10 5
50
12V VOUT Efficiency vs. VIN.
FIGURE 2-10:
100
Peak Current Limit (A)
IOUT = 100 mA
80
Efficiency (%)
VFB vs. Temperature.
1.8
90
IOUT = 500 mA
70
60
IOUT = 10 mA
50
40
30
20
1.6
VOUT = 5V
1.4
1.2
VOUT = 3.3V
1
VOUT = 12V
0.8
0.6
0.4
0.2
10
0
0
26
30
34
FIGURE 2-8:
38
VIN (V)
42
46
-40 -25 -10
50
24V VOUT Efficiency vs. VIN.
1400
5
FIGURE 2-11:
Temperature.
20 35 50 65 80
Temperature (°C)
95 110 125
Peak Current Limit vs.
1.2
VOUT = 5V
1200
Switch RDSON (Ω)
1
VOUT = 3.3V
1000
IOUT (mA)
20 35 50 65 80 95 110 125
Temperature (°C)
800
VOUT = 12V
VOUT = 24V
600
400
0.8
0.6
0.4
VIN = 6V
VOUT=VBOOST= 3.3V
IOUT = 200 mA
0.2
200
0
0
6
10
14
18
FIGURE 2-9:
DS20005308C-page 6
22
26 30
VIN (V)
34
38
42
Max IOUT vs. VIN.
46
50
-40 -25 -10
FIGURE 2-12:
Temperature.
5
20 35 50 65 80 95 110 125
Temperature (°C)
Switch RDSON vs.
2014-2016 Microchip Technology Inc.
MCP16331
Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 x10 µF, L = 15 µH, VOUT = 3.3V, ILOAD = 100 mA,
TA = +25°C, 6-Lead SOT-23 package.
0.8
3.295
Switch RDSON (Ω)
0.75
0.7
VIN = 6V
VOUT= 3.3V
VOUT(V)
0.65
VOUT = 3.3V
IOUT=100 mA
3.29
0.6
3.285
3.28
0.55
0.5
3.275
0.45
3.27
0.4
2.5
3
3.5
4
VBOOST (V)
FIGURE 2-13:
4.5
5
5
5.5
Switch RDSON vs. VBOOST.
20 25
VIN(V)
30
35
40
45
50
VOUT vs. VIN.
1.2
4.6
No Load Input Current (mA)
Input Voltage (V)
15
FIGURE 2-16:
5
VIN = 12V
VOUT = 3.3V
1.1
UVLO START
4.2
3.8
UVLO STOP
3.4
1
0.9
0.8
3
-40 -25 -10
5
FIGURE 2-14:
Temperature.
-40 -25 -10
20 35 50 65 80 95 110 125
Temperature (°C)
Undervoltage Lockout vs.
7
1.3
1.2
UP
1.1
DOWN
1
6.5
Shutdown Current (µA)
VIN = 12V
VOUT = 3.3V
IOUT = 100 mA
5
FIGURE 2-17:
Temperature.
1.4
Enable Voltage (V)
10
20 35 50 65 80
Temperature (°C)
95 110 125
Input Quiescent Current vs.
VIN = 12V
VOUT = 3.3V
6
5.5
5
4.5
4
0.9
-40 -25 -10
FIGURE 2-15:
Temperature.
5
20 35 50 65 80 95 110 125
Temperature (°C)
EN Threshold Voltage vs.
2014-2016 Microchip Technology Inc.
-40 -25 -10
FIGURE 2-18:
Temperature.
5
20 35 50 65 80
Temperature (°C)
95 110 125
Shutdown Current vs.
DS20005308C-page 7
MCP16331
Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 x10 µF, L = 15 µH, VOUT = 3.3V, ILOAD = 100 mA,
TA = +25°C, 6-Lead SOT-23 package.
Switching Frequency (kHz)
525
1.9
VOUT = 3.3V
No Load Input Current (mA)
1.7
1.5
1.3
1.1
0.9
0.7
0.5
5
10
15
FIGURE 2-19:
VIN.
20
25
30
VIN (V)
35
40
45
475
VIN = 12V
VOUT = 3.3V
IOUT = 200 mA
450
50
Input Quiescent Current vs.
500
-40 -25 -10
FIGURE 2-22:
Temperature.
5
20 35 50 65 80 95 110 125
Temperature (°C)
Switching Frequency vs.
4.3
18
VOUT=3.3V
15
To Start
4.1
VIN (V)
Shutdown Current (µA)
VOUT = 3.3V
12
3.9
9
To Stop
3.7
6
3
3.5
5
10
15
FIGURE 2-20:
20
25
30
VIN (V)
35
40
45
50
Shutdown Current vs. VIN.
0
0.1
FIGURE 2-23:
Output Current.
0.2
0.3
Output Current (A)
0.4
0.5
Minimum Input Voltage vs.
Output Current (mA)
20
15
VOUT = 3.3V
10
VOUT = 5V
5
0
5
10
15
20
25
30
VIN (V)
35
40
45
50
FIGURE 2-21:
PWM/Skipping IOUT
Threshold vs. VIN.
DS20005308C-page 8
2014-2016 Microchip Technology Inc.
MCP16331
Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 x10 µF, L = 15 µH, VOUT = 3.3V, ILOAD = 100 mA,
TA = +25°C, 6-Lead SOT-23 package.
VIN = 12V
VOUT = 3.3V
IOUT = 300 mA
VOUT
20 mV/div
AC coupled
VIN = 12V
VOUT = 3.3V
IOUT = 200 mA
VOUT
1V/div
IL
200 mA/div
EN
2V/div
SW
10V/div
2 µs/div
FIGURE 2-24:
Waveforms.
80 µs/div
Heavy Load Switching
VIN = 48V
VOUT = 3.3V
IOUT = 5 mA
VOUT
20 mV/div
AC coupled
FIGURE 2-27:
Start-up from EN.
VIN = 12V
VOUT = 3.3V
IOUT
200 mA/div
Load Step from
100 mA to 500 mA
IL
50 mA/div
SW
20V/div
VOUT
50 mV/div
AC coupled
10 µs/div
FIGURE 2-25:
Waveforms.
200 µs/div
Light Load Switching
FIGURE 2-28:
VOUT = 3.3V
IOUT = 200 mA
VIN = 36V
VOUT = 3.3V
IOUT = 200 mA
VOUT
100 mV/div
AC coupled
VOUT
1V/div
VIN
10V/div
VIN
20V/div
Line Step from
5V to 24V
200 µs/div
80 µs/div
FIGURE 2-26:
Load Transient Response.
Start-up from VIN.
2014-2016 Microchip Technology Inc.
FIGURE 2-29:
Line Transient Response.
DS20005308C-page 9
MCP16331
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
MCP16331
Symbol
Description
6
SW
Output switch node. Connects to the inductor, freewheeling diode and the
bootstrap capacitor.
2
4
EN
Enable pin. There is an internal pull-up on the VIN. To turn the device off,
connect EN to GND.
3
—
NC
Not connected.
4
—
NC
Not connected.
5
2
GND
Ground pin.
6
3
VFB
Output voltage feedback pin. Connect VFB to an external resistor divider to set
the output voltage.
7
1
BOOST
Boost voltage that drives the internal NMOS control switch. A bootstrap
capacitor is connected between the BOOST and SW pins.
8
5
VIN
Input supply voltage pin for power and internal biasing.
9
—
EP
Exposed Thermal Pad
TDFN
SOT-23
1
3.1
Switch Node (SW)
3.5
Boost Pin (BOOST)
The switch node pin is connected internally to the
NMOS switch, and externally to the SW node consisting of the inductor and Schottky diode. The external
Schottky diode should be connected close to the SW
node and GND.
The supply for the floating high-side driver, used to turn
the integrated N-Channel MOSFET on and off, is
connected to the BOOST pin.
3.2
The EN pin is a logic-level input used to enable or
disable the device switching and lower the quiescent
current while disabled. By default the MCP16331 is
enabled through an internal pull-up. To turn off the
device, the EN pin must be pulled low.
Connect the input voltage source to VIN. The input
source should be decoupled to GND with a 4.7 µF-20 µF
capacitor, depending on the impedance of the source
and output current. The input capacitor provides current
for the switch node and a stable voltage source for the
internal device power. This capacitor should be
connected as close as possible to the VIN and GND pins.
3.3
3.7
Enable Pin (EN)
Ground Pin (GND)
The ground or return pin is used for circuit ground connection. The length of the trace from the input cap return,
output cap return and GND pin should be made as short
as possible to minimize the noise on the GND pin.
3.4
3.6
Power Supply Input Voltage Pin
(VIN)
Exposed Thermal Pad Pin (EP)
There is an internal electrical connection between the
EP and GND pin for the TDFN package.
Feedback Voltage Pin (VFB)
The VFB pin is used to provide output voltage regulation
by using a resistor divider. The VFB voltage will be 0.8V
typical with the output voltage in regulation.
DS20005308C-page 10
2014-2016 Microchip Technology Inc.
MCP16331
NOTES:
2014-2016 Microchip Technology Inc.
DS20005308C-page 11
MCP16331
4.0
DETAILED DESCRIPTION
4.1
Device Overview
4.1.3
EXTERNAL COMPONENTS
External components consist of:
The MCP16331 is a high input voltage step-down
regulator, capable of supplying 500 mA to a regulated
output voltage, from 2.0V to 24V. Internally, the trimmed
500 kHz oscillator provides a fixed frequency, while the
Peak Current-Mode control architecture varies the duty
cycle for output voltage regulation. An internal floating
driver is used to turn the high-side, integrated N-Channel
MOSFET on and off. The power for this driver is derived
from an external boost capacitor (CBOOST) whose
energy is supplied from a fixed voltage, ranging between
3.0V and 5.5V, typically the input or output voltage of the
converter. For applications with an output voltage outside of this range, 12V for example, the boost capacitor
bias can be derived from the output using a simple Zener
diode regulator.
4.1.1
INTERNAL REFERENCE VOLTAGE
(VREF)
An integrated precise 0.8V reference, combined with an
external resistor divider, sets the desired converter output voltage. The resistor divider range can vary without
affecting the control system gain. High-value resistors
consume less current, but are more susceptible to noise.
4.1.2
INTERNAL COMPENSATION
All control system components necessary for stable
operation over the entire device operating range are
integrated, including the error amplifier and inductor
current slope compensation. To add the proper amount
of slope compensation, the inductor value changes
along with the output voltage (see Table 5-1).
•
•
•
•
•
•
Input capacitor
Output filter (inductor and capacitor)
Freewheeling diode
Boost capacitor
Boost blocking diode
Resistor divider
The selection of the external inductor, output capacitor,
input capacitor and freewheeling diode is dependent
upon the output voltage, input voltage, and the
maximum output current.
4.1.4
ENABLE INPUT
The enable input is used to disable the device while
connected to GND. If disabled, the MCP16331 device
consumes a minimal current from the input.
4.1.5
SOFT START
The internal reference voltage rate of rise is controlled
during start-up, minimizing the output voltage
overshoot and the inrush current.
4.1.6
UNDERVOLTAGE LOCKOUT
An integrated Undervoltage Lockout (UVLO) prevents
the converter from starting until the input voltage is high
enough for normal operation. The converter will typically
start at 4.1V and operate down to 3.6V. Hysteresis is
added to prevent starting and stopping, during start-up,
as a result of loading the input voltage source.
4.1.7
OVERTEMPERATURE
PROTECTION
Overtemperature protection limits the silicon die
temperature to +160°C by turning the converter off. The
normal switching resumes at +130°C.
DS20005308C-page 12
2014-2016 Microchip Technology Inc.
MCP16331
VIN
BG
REF
CIN
VOUT
VREG
SS Overtemperature
VREF
500 kHz Osc
RTOP
RBOT
–
VOUT
PWM
Latch
Comp
+
RCOMP
VREF
CBOOST
S
+
Amp
–
FB
EN
Boost
BOOST Diode
Boost
Precharge
Charge
SW
R
Precharge
Overtemp
+
+
CCOMP
+
–
HS
Drive
SHDN All Blocks
GND
Schottky
Diode
COUT
CS
RSENSE
Slope
Comp
GND
Note: EN has an internal pull-up, so the device will start even if the EN pin is left floating.
FIGURE 4-1:
4.2
4.2.1
MCP16331 Block Diagram.
Functional Description
STEP-DOWN OR BUCK CONVERTER
The MCP16331 is a non-synchronous, step-down or buck
converter capable of stepping input voltages, ranging
from 4.4V to 50V, down to 2.0V to 24V for VIN > VOUT.
The integrated high-side switch is used to chop or
modulate the input voltage using a controlled duty cycle
for output voltage regulation. High efficiency is
achieved by using a low-resistance switch, low forward
drop diode, low Equivalent Series Resistance (ESR),
inductor and capacitor. When the switch is turned on, a
DC voltage is applied across the inductor (VIN – VOUT),
resulting in a positive linear ramp of inductor current.
When the switch turns off, the applied inductor voltage
is equal to -VOUT, resulting in a negative linear ramp of
inductor current (ignoring the forward drop of the
Schottky diode).
2014-2016 Microchip Technology Inc.
For steady-state, continuous inductor current operation, the positive inductor current ramp must equal the
negative current ramp in magnitude. While operating in
steady state, the switch duty cycle must be equal to the
relationship of VOUT/VIN for constant output voltage
regulation, under the condition that the inductor current
is continuous or never reaches zero. For discontinuous
inductor current operation, the steady-state duty cycle
will be less than VOUT/VIN to maintain voltage regulation. The average of the chopped input voltage or SW
node voltage is equal to the output voltage, while the
average of the inductor current is equal to the output
current.
DS20005308C-page 13
MCP16331
IL
VOUT
SW
VIN
+
–
Schottky
Diode
L
COUT
IOUT
IL
0
VIN
VOUT
SW
on
off
on
on
off
Continuous Inductor Current Mode
IL
0
IOUT
VIN
SW
on
off
on
off
on
Discontinuous Inductor Current Mode
FIGURE 4-2:
4.2.2
Step-Down Converter.
PEAK CURRENT MODE CONTROL
The MCP16331 integrates a Peak Current-Mode control
architecture, resulting in superior AC regulation while
minimizing the number of voltage loop compensation
components and their size for integration. Peak CurrentMode control takes a small portion of the inductor
current, replicates it and compares this replicated
current sense signal with the output of the integrated
error voltage. In practice, the inductor current and the
internal switch current are equal during the switch-on
time. By adding this peak current sense to the system
control, the step-down power train system is reduced
from a 2nd order to a 1st order. This reduces the system
complexity and increases its dynamic performance.
For Pulse-Width Modulation (PWM) duty cycles that
exceed 50%, the control system can become bimodal,
where a wide pulse, followed by a short pulse, repeats
instead of the desired fixed pulse width. To prevent this
mode of operation, an internal compensating ramp is
summed into the current shown in Figure 4-2.
4.2.3
PULSE-WIDTH MODULATION (PWM)
The internal oscillator periodically starts the switching
period, which in the MCP16331 device’s case, occurs
every 2 µs or 500 kHz. With the integrated switch turned
on, the inductor current ramps up until the sum of the
current sense and slope compensation ramp exceeds
the integrated error amplifier output. The error amplifier
output slews up or down to increase or decrease the
inductor peak current feeding into the output LC filter. If
the regulated output voltage is lower than its target, the
error amplifier output rises. This results in an increase in
DS20005308C-page 14
the inductor current to correct for error in the output voltage. The fixed frequency duty cycle is terminated when
the sensed inductor peak current, summed with the
internal slope compensation, exceeds the output voltage
of the error amplifier. The PWM latch is set by turning off
the internal switch and preventing it from turning on until
the beginning of the next cycle. An overtemperature
signal or boost cap undervoltage can also reset the
PWM latch to terminate the cycle.
When working close to the boundary conduction
threshold, a jitter on the SW node may occur, reflecting
in the output voltage. Although the low-frequency
output component is very small, it may be desirable to
completely eliminate this component. To achieve this,
different methods can be applied to reduce or
completely eliminate this component. In addition to a
very good layout, a capacitor in parallel with the top
feedback resistor, or an RC snubber between the SW
node and GND, can be added.
Typical values for the snubber are 680 pF and 430,
while the capacitor in parallel with the top feedback
resistor can use values from 10 pF to 47 pF. Using such
a snubber eliminates the ringing on the SW node, but
decreases the overall efficiency of the converter.
4.2.4
HIGH-SIDE DRIVE
The MCP16331 features an integrated high-side
N-Channel MOSFET for high-efficiency step-down
power conversion. An N-Channel MOSFET is used for
its low resistance and size (instead of a P-Channel
MOSFET). A gate drive voltage above the input is
necessary to turn on the high-side N-Channel. The
high-side drive voltage should be between 3.0V and
5.5V. The N-Channel source is connected to the inductor and Schottky diode or switch node. When the switch
is off, the boost cap voltage is replenished, typically
from the output voltage for 3V to 5V output applications. A boost blocking diode is used to prevent current
flow from the boost cap back into the output during the
internal switch-on time.
Prior to start-up, the boost cap has no stored charge to
drive the switch. An internal regulator is used to “precharge” the boost cap. Once precharged, the switch is
turned on and the inductor current flows. When the
switch turns off, the inductor current freewheels through
the Schottky diode, providing a path to recharge the
boost cap. Worst-case conditions for recharge occur
when the switch turns on for a very short duty cycle at
light load, limiting the inductor current ramp. In this case,
there is a small amount of time for the boost capacitor to
recharge. For high input voltages there is enough
precharge current to replace the boost cap charge. For
input voltages above 5.5V typical, the MCP16331 device
will regulate the output voltage with no load. After starting, the MCP16331 will regulate the output voltage until
the input voltage decreases below 4V. See Figure 2-23
for device range of operation over input voltage, output
voltage and load.
2014-2016 Microchip Technology Inc.
MCP16331
4.2.5
ALTERNATIVE BOOST BIAS
For low-voltage output applications with unregulated
input voltage, a shunt regulator derived from the input
can be used to derive the boost supply. For applications
with high output voltage or regulated high input voltage,
a series regulator can be used to derive the boost
supply. In case the boost is biased from an external
source while in shutdown, the device will draw slightly
higher current.
For 3.0V to 5.0V output voltage applications, the boost
supply is typically the output voltage. For applications
with VOUT < 3.0V or VOUT > 5.0V, an alternative boost
supply can be used.
Alternative boost supplies can be from the input, input
derived, output derived or an auxiliary system voltage.
Boost Diode
C1
VZ = 5.1V
BOOST
RSH
VIN
12V
CB
EN
L
VOUT
2V
MCP16331 SW
VIN
COUT
FW Diode
CIN
RTOP
FB
GND
RBOT
3.0V to 5.5V External Supply
Boost Diode
BOOST
CB
EN
VIN
12V
L
VOUT
2V
MCP16331 SW
VIN
COUT
FW Diode
CIN
RTOP
FB
GND
FIGURE 4-3:
RBOT
Shunt and External Boost Supply.
2014-2016 Microchip Technology Inc.
DS20005308C-page 15
MCP16331
Shunt boost supply regulation is used for low output
voltage converters operating from a wide ranging input
source. A regulated 3.0V to 5.5V supply is needed to
provide high-side drive bias. The shunt uses a Zener
diode to clamp the voltage within the 3.0V to 5.5V
range using the resistance shown in Figure 4-3.
To calculate the shunt resistance, the maximum IBOOST
and IZ current are used at the minimum input voltage
(Equation 4-2).
EQUATION 4-2:
V INMIN – V Z
R SH = -----------------------------I Boost + I Z
To calculate the shunt resistance, the boost drive
current can be estimated using Equation 4-1.
IBOOST_TYP for 3.3V Boost Supply = 0.6 mA
VZ and IZ can be found on the Zener diode
manufacturer’s data sheet. Typically, IZ = 1 mA.
IBOOST_TYP for 5.0V Boost Supply = 0.8 mA.
EQUATION 4-1:
SHUNT RESISTANCE
Series regulator applications use a Zener diode to drop
the excess voltage. The series regulator bias source
can be input or output voltage derived, as shown in
Figure 4-4. The boost supply must remain between
3.0V and 5.5V at all times for proper circuit operation.
BOOST CURRENT
I BOOST = I BOOST_TYP 1.5 mA
Boost Diode VZ = 7.5V
BOOST
CB
EN
L
MCP16331
VIN
VOUT
12V
SW
VIN
15V to 50V
COUT
FW Diode
CIN
RTOP
FB
GND
RBOT
Boost Diode
BOOST
VZ = 7.5V
CB
EN
12V
VIN
L
MCP16331
VOUT
2V
SW
VIN
COUT
FW Diode
CIN
GND
RTOP
FB
RBOT
FIGURE 4-4:
DS20005308C-page 16
Series Regulator Boost Supply.
2014-2016 Microchip Technology Inc.
MCP16331
5.0
APPLICATION INFORMATION
5.1
Typical Applications
The MCP16331 step-down converter operates over a
wide input voltage range, up to 50V maximum. Typical
applications include generating a bias or VDD voltage for
the PIC® microcontroller product line, digital control system bias supply for AC-DC converters, 24V industrial
input and similar applications.
5.2
Adjustable Output Voltage
Calculations
To calculate the resistor divider values for the
MCP16331, Equation 5-1 can be used. RTOP is
connected to VOUT, RBOT is connected to GND and
both are connected to the VFB input pin.
EQUATION 5-1:
R TOP
V OUT
= R BOT ------------- – 1
V FB
EXAMPLE 5-1:
VOUT = 3.3V
VFB = 0.8V
RBOT = 10 k
5.3
General Design Equations
The step-down converter duty cycle can be estimated
using Equation 5-2 while operating in Continuous
Inductor Current-Mode. This equation also counts the
forward drop of the freewheeling diode and internal
N-Channel MOSFET switch voltage drop. As the load
current increases, the switch voltage drop and diode
voltage drop increase, requiring a larger PWM duty
cycle to maintain the output voltage regulation. Switch
voltage drop is estimated by multiplying the switch
current times the switch resistance or RDSON.
EQUATION 5-2:
V OUT + V Diode
D = ------------------------------------------------------ V IN – I SW R DSON
The MCP16331 device features an integrated slope
compensation to prevent the bimodal operation of the
PWM duty cycle. Internally, half of the inductor current
downslope is summed with the internal current sense
signal. For the proper amount of slope compensation,
it is recommended to keep the inductor downslope
current constant by varying the inductance with VOUT,
where K = 0.22V/µH.
EQUATION 5-3:
K = V OUT L
RTOP = 31.25 k (standard value = 31.6 k)
VOUT = 3.328V (using standard value)
EXAMPLE 5-2:
CONTINUOUS INDUCTOR
CURRENT DUTY CYCLE
TABLE 5-1:
VOUT = 5.0V
RECOMMENDED INDUCTOR
VALUES
VFB = 0.8V
VOUT
K
LSTANDARD
RBOT = 10 k
2.0V
0.20
10 µH
RTOP = 52.5 k (standard value = 52.3 k)
3.3V
0.22
15 µH
VOUT = 4.98V (using standard value)
5.0V
0.23
22 µH
12V
0.21
56 µH
15V
0.22
68 µH
24V
0.24
100 µH
The transconductance error amplifier gain is controlled
by its internal impedance. The external divider resistors
have no effect on system gain so a wide range of values
can be used. A 10 k resistor is recommended as a
good trade-off for quiescent current and noise immunity.
2014-2016 Microchip Technology Inc.
DS20005308C-page 17
MCP16331
5.4
Input Capacitor Selection
5.6
Inductor Selection
The step-down converter input capacitor must filter the
high input ripple current as a result of pulsing or chopping
the input voltage. The MCP16331 input voltage pin is
used to supply voltage for the power train and as a
source for internal bias. A low Equivalent Series
Resistance (ESR), preferably a ceramic capacitor, is recommended. The necessary capacitance is dependent
upon the maximum load current and source impedance.
Three capacitor parameters to keep in mind are the
voltage rating, Equivalent Series Resistance and the
temperature rating. For wide temperature range applications, a multilayer X7R dielectric is mandatory, while for
applications with limited temperature range, a multilayer
X5R dielectric is acceptable. Typically, input capacitance between 4.7 µF and 20 µF is sufficient for most
applications.
The MCP16331 is designed to be used with small
surface mount inductors. Several specifications should
be considered prior to selecting an inductor. To
optimize system performance, the inductance value is
determined by the output voltage (Table 5-1), so the
inductor ripple current is somewhat constant over the
output voltage range.
The input capacitor voltage rating should be a minimum
of VIN plus margin. Table 5-2 contains the recommended
range for the input capacitor value.
VIN = 12V
5.5
EQUATION 5-4:
INDUCTOR RIPPLE
CURRENT
V
–V
L
IN
OUT
IL = --------------------------- t ON
EXAMPLE 5-3:
VOUT = 3.3V
IOUT = 500 mA
Output Capacitor Selection
The output capacitor helps in providing a stable output
voltage during sudden load transients and reduces the
output voltage ripple. As with the input capacitor, X5R
and X7R ceramic capacitors are well suited for this
application.
The amount and type of output capacitance, and Equivalent Series Resistance will have a significant effect on
the output ripple voltage and system stability. The
range of the output capacitance is limited due to the
integrated compensation of the MCP16331.
The output voltage capacitor voltage rating should be a
minimum of VOUT plus margin.
Table 5-2 contains the recommended range for the
input and output capacitor value:
TABLE 5-2:
EQUATION 5-5:
INDUCTOR PEAK
CURRENT
IL
I LPK = -------- + I OUT
2
Inductor Ripple Current = 319 mA
Inductor Peak Current = 660 mA
For the example above, an inductor saturation rating of a
minimum 660 mA is recommended. Low DCR inductors
result in higher system efficiency. A trade-off between
size, cost and efficiency is made to achieve the desired
results.
CAPACITOR VALUE RANGE
Parameter
Min.
Max.
CIN
4.7 µF
None
COUT
20 µF
—
DS20005308C-page 18
2014-2016 Microchip Technology Inc.
MCP16331
ME3220-153
15
0.52
0.90
3.2x2.5x2.0
ME3220-223
22
0.787
0.71
3.2x2.5x2.0
LPS4414-153
15
0.440
0.92
4.4x4.4x1.4
LPS4414-223
22
0.59
0.74
4.4x4.4x1.4
LPS6235-153
15
0.125
2.00
6.2x6.2x3.5
LPS6235-223
22
0.145
1.7
6.2x6.2x3.5
MSS6132-153
15
0.106
1.56
6.1x6.1x3.2
MSS6132-223
22
0.158
1.22
6.1x6.1x3.2
MSS7341-153
15
0.055
1.78
6.6x6.6x4.1
MSS7341-223
22
0.082
1.42
6.6x6.6x4.1
LPS3015-153
15
0.700
0.62
3.0x3.0x1.5
LPS3015-223
22
0.825
0.5
3.0x3.0x1.5
0.575
0.75
2.8x2.8x2.8
ISAT (A)
Size
WxLxH
(mm)
Part Number
Value
(µH)
ISAT (A)
MCP16331 RECOMMENDED
5V INDUCTORS
DCR ()
TABLE 5-4:
Value
(µH)
MCP16331 RECOMMENDED
3.3V INDUCTORS
DCR ()
TABLE 5-3:
Size
WxLxH
(mm)
Coilcraft®
Wurth Elektronik
Part Number
Coilcraft®
®
Wurth Elektronik
744025150
15
744042150
7447779115
®
0.400 0.900 2.8x2.8x2.8
744025220
22
15
0.22
0.75
4.8x4.8x1.8
744042220
22
0.3
0.6
4.8x4.8x1.8
15
0.081
2.2
7.3x7.3x4.5
7447779122
22
0.11
1.7
7.3x7.3x4.5
Coiltronics®
Cooper
SD12-150R
15
SD3118-150-R
SD52-150-R
Bussman®
0.408 0.692 5.2x5.2x1.2
SD12-220-R
22
0.633 0.574 5.2x5.2x1.2
15
0.44
0.75
3.2x3.2x1.8
SD3118-220-R
22
0.676
0.61
3.2x3.2x1.8
15
0.161
0.88
5.2x5.5.2.0
SD52-220-R
22
0.204
0.73
5.2x5.2x2
Sumida®
Sumida®
CDPH4D19FNP
-150MC
15
0.075
0.66
5.2x5.2x2.0
CDPH4D19FNP
-220MC
22
0.135
0.54
5.2x5.2x2
CDRH3D16/
HPNP-150MC
15
0.410
0.65
4.0x4.0x1.8
CDRH3D16/
HPNP-220MC
22
0.61
0.55
4.0x4.0x1.8
22
0.15
0.85
6.3x6.3x3
TDK - EPCOS®
B82462G4153M
TDK - EPCOS®
15
0.097
1.05
2014-2016 Microchip Technology Inc.
6.3x6.3x3
82462G4223M
DS20005308C-page 19
MCP16331
5.7
Freewheeling Diode
5.9
The freewheeling diode creates a path for inductor
current flow after the internal switch is turned off. The
average diode current is dependent upon the output
load current at duty cycle (D). The efficiency of the converter is a function of the forward drop and speed of the
freewheeling diode. A low forward drop Schottky diode
is recommended. The current rating and voltage rating
of the diode is application-dependent. The diode
voltage rating should be a minimum of VIN plus margin.
The average diode current can be calculated using
Equation 5-6.
EQUATION 5-6:
DIODE AVERAGE
CURRENT
Boost Capacitor
The boost capacitor is used to supply current for the
internal high-side drive circuitry that is above the input
voltage. The boost capacitor must store enough energy
to completely drive the high-side switch on and off. A
0.1 µF X5R or X7R capacitor is recommended for all
applications. The boost capacitor maximum voltage is
5.5V, so a 6.3V or 10V rated capacitor is recommended.
5.10
Thermal Calculations
The MCP16331 is available in the 6-lead SOT-23 and
8-lead TDFN packages. By calculating the power dissipation and applying the package thermal resistance
(JA), the junction temperature is estimated.
To quickly estimate the internal power dissipation for
the switching step-down regulator, an empirical calculation using measured efficiency can be used. Given
the measured efficiency, the internal power dissipation
is estimated by Equation 5-7. This power dissipation
includes all internal and external component losses.
For a quick internal estimate, subtract the estimated
Schottky diode loss and inductor DCR loss from the
PDIS calculation in Equation 5-7.
I DAVG = 1 – D I OUT
EXAMPLE 5-4:
IOUT = 0.5A
VIN = 15V
VOUT = 5V
D = 5/15
EQUATION 5-7:
IDAVG = 333 mA
V OUT I OUT
----------------------------- Efficiency- – V OUT I OUT = PDis
A 0.5A to 1A diode is recommended.
TABLE 5-5:
TOTAL POWER
DISSIPATION ESTIMATE
FREEWHEELING DIODES
18 VIN, 500 mA Diodes Inc. B130L-13-F
30V, 1A
The difference between the first term, input power and
the second term, power delivered, is the total system
power dissipation. The freewheeling Schottky diode
losses are determined by calculating the average diode
current and multiplying by the diode forward drop. The
inductor losses are estimated by PL = IOUT2 x LDCR.
48 VIN, 500 mA Diodes Inc. B1100
100V, 1A
EQUATION 5-8:
App
Mfr.
Part
Number
Rating
12 VIN, 500 mA Diodes Inc. DFLS120L-7 20V, 1A
24 VIN, 100 mA Diodes Inc. B0540Ws-7 40V, 0.5A
5.8
Boost Diode
The boost diode is used to provide a charging path from
the low-voltage gate drive source while the switch node
is low. The boost diode blocks the high voltage of the
switch node from feeding back into the output voltage
when the switch is turned on, forcing the switch node
high.
DIODE POWER
DISSIPATION ESTIMATE
PDiode = VF 1 – D I OUT
A standard 1N4148 ultra-fast diode is recommended
for its recovery speed, high voltage blocking capability,
availability and cost. The voltage rating required for the
boost diode is VIN.
For low boost voltage applications, a small Schottky
diode with the appropriately rated voltage can be used
to lower the forward drop, increasing the boost supply
for the gate drive.
DS20005308C-page 20
2014-2016 Microchip Technology Inc.
MCP16331
EXAMPLE 5-5:
5.11
VIN = 10V
VOUT = 5.0V
IOUT = 0.4A
Efficiency = 90%
Total System Dissipation = 222 mW
LDCR = 0.15
PL = 24 mW
Diode VF = 0.50
D = 50%
PDiode = 125 mW
MCP16331 internal power dissipation estimate:
PDIS - PL - PDIODE = 73 mW
JA = 198°C/W
Estimated Junction = +14.5°C
Temperature Rise
2014-2016 Microchip Technology Inc.
PCB Layout Information
Good printed circuit board layout techniques are
important to any switching circuitry and switching
power supplies are no different. When wiring the
switching high-current paths, short and wide traces
should be used. Therefore, it is important that the input
and output capacitors be placed as close as possible to
the MCP16331 to minimize the loop area.
The feedback resistors and feedback signal should be
routed away from the switching node, and the switching
current loop. When possible, ground planes and traces
should be used to help shield the feedback signal and
minimize noise and magnetic interference.
A good MCP16331 layout starts with CIN placement. CIN
supplies current to the input of the circuit when the switch
is turned on. In addition to supplying high-frequency
switch current, CIN also provides a stable voltage source
for the internal MCP16331 circuitry. Unstable PWM
operation can result if there are excessive transients or
ringing on the VIN pin of the MCP16331 device. In
Figure 5-1, CIN is placed close to pin 5. A ground plane
on the bottom of the board provides a low resistive and
inductive path for the return current. The next priority in
placement is the freewheeling current loop formed by D1,
COUT and L, while strategically placing the COUT return
close to the CIN return. Next, the boost capacitor should
be placed between the boost pin and the switch node pin,
SW. This leaves space close to the MCP16331 VFB pin
to place RTOP and RBOT. RTOP and RBOT are routed
away from the switch node so noise is not coupled into
the high-impedance VFB input.
DS20005308C-page 21
MCP16331
Bottom Plane is GND
Bottom Trace
RBOT RTOP 10
MCP16331
C DB
1 B
VIN
VOUT
D1
L
2 x CIN
GND
COUT
COUT
4
BOOST
EN
GND
DB
1
CB
VIN
4V to 50V
CIN
5
MCP16331
SW
VOUT
3.3V
L
6
VIN
COUT
D1
GND
FB
RTOP
3
2
Component
Value
CIN
COUT
L
RTOP
RBOT
D1
DB
CB
2 x 10 µF
2 x 10 µF
15 µH
31.2 k
10 k
B1100
1N4148
100 nF
10
RBOT
Note: A 10 resistor is used with a network analyzer to measure system gain and phase.
FIGURE 5-1:
DS20005308C-page 22
MCP16331 SOT-23-6 Recommended Layout, 500 mA Design.
2014-2016 Microchip Technology Inc.
MCP16331
Bottom Plane is GND
MCP16331
RBOT
RTOP
DB
VIN
VOUT
CB
CIN
GND
GND
COUT
D1
4
BOOST
EN
GND
DB
1
CB
VIN
5
4V to 50V
CIN
VIN
MCP16331
6
COUT
D1
GND
2
Component
Value
CIN
COUT
L
RTOP
RBOT
D1
DB
CB
1 µF
10 µF
15 µH
31.2 k
10 k
STPS0560Z
1N4148
100 nF
FIGURE 5-2:
SW
VOUT
3.3V
L
FB
3
RTOP
RBOT
Compact MCP16331 SOT-23-6 D2 Recommended Layout, Low-Current Design.
2014-2016 Microchip Technology Inc.
DS20005308C-page 23
MCP16331
MCP16331
CSNUB
RSNUB
RTOP
RBOT
L
CIN
COUT
D1
CB
DB
VIN
VOUT
GND
2
BOOST
EN
DB
7
CB
VIN
4V to 50V
CIN
8
VIN
MCP16331
1
CSNUB
D1
GND
5
Note:
SW
Component
Value
CIN
COUT
L
RTOP
RBOT
D1
DB
CB
CTOP
CSNUB
RSNUB
2x10 µF
2x10 µF
22 µH
31.2 k
10 k
MBRS1100
1N4148WS
100 nF
20 pF
430 pF
680
FB
VOUT
3.3V
L
RSNUB
6
COUT
RTOP
CTOP
Optional
RBOT
Red represents top layer pads, and traces and blue represent bottom layer pads and traces. On the bottom
layer, a GND plane should be placed, which is not represented in the example above for visibility reasons.
FIGURE 5-3:
DS20005308C-page 24
MCP16331 TDFN-8 Recommended Layout Design.
2014-2016 Microchip Technology Inc.
MCP16331
6.0
TYPICAL APPLICATION CIRCUITS
U1
Boost Diode
BOOST
CB
EN
L
MCP16331
VIN
4.5V to 50V
VOUT
3.3V
SW
VIN
COUT
FW Diode
CIN
GND
RTOP
FB
RBOT
Component
Value
Manufacturer
Part Number
Comment
CIN
2 x 10 µF
COUT
2 x 10 µF
Taiyo Yuden
Co., Ltd.
JMK212B7106KG-T
Capacitor, 10 µF, 6.3V, Ceramic, X7R, 0805,
10%
15 µH
Coilcraft®
MSS6132-153ML
MSS6132, 15 µH, Shielded Power Inductor
L
TDK Corporation C5750X7S2A106M230KB Capacitor, 10 µF, 100V, X7S, 2220
RTOP
31.6 k
Panasonic®- ECG
ERJ-3EKF3162V
Resistor, 31.6 KΩ, 1/10W, 1%, 0603, SMD
RBOT
10 k
Panasonic - ECG
ERJ-3EKF1002V
Resistor, 10.0 KΩ, 1/10W, 1%, 0603, SMD
FW Diode
B1100
Diodes
Incorporated®
B1100-13-F
Boost Diode
1N4148
Diodes
Incorporated
1N4148WS-7-F
Diode Switch, 75V, 200 mW, SOD-323
CB
100 nF
AVX Corporation
0603YC104KAT2A
Capacitor, 0.1 µF, 16V Ceramic, X7R,
0603, 10%
U1
MCP16331
Microchip
Technology Inc.
MCP16331-E/CH
MCP16331-E/MNY
MCP16331, 500 kHz Buck Switcher, 50V,
500 mA
FIGURE 6-1:
Schottky, 100V, 1A, SMA
Typical Application, 50V VIN to 3.3V VOUT.
2014-2016 Microchip Technology Inc.
DS20005308C-page 25
MCP16331
U1
Boost Diode
BOOST
CB
EN
VIN
15V to 50V
DZ
L
MCP16331
VOUT
12V
SW
VIN
COUT
FW Diode
CIN
GND
RTOP
FB
RBOT
Component
Value
Manufacturer
CIN
2 x 10 µF
TDK
Corporation
COUT
2 x 10 µF
Taiyo Yuden
Co., Ltd.
JMK212B7106KG-T
Capacitor, Ceramic, 10 µF, 25V, X7R, 10%,
1206
L
56 µH
Coilcraft®
MSS7341-563ML
MSS7341, 56 µH, Shielded Power Inductor
RTOP
140 k
Panasonic® - ECG
ERJ-3EKF3162V
Resistor, 140 KΩ, 1/10W, 1%, 0603, SMD
RBOT
10 k
Panasonic - ECG
ERJ-3EKF1002V
FW Diode
B1100
Diodes
Incorporated®
B1100-13-F
Boost Diode
1N4148
Diodes
Incorporated
1N4148WS-7-F
Diode Switch, 75V, 200 mW, SOD-323
CB
100 nF
AVX
Corporation
0603YC104KAT2A
Capacitor, 0.1 µF, 16V, Ceramic, X7R,
0603, 10%
DZ
7.5V Zener
Diodes
Incorporated
MMSZ5236BS-7-F
Diode Zener, 7.5V, 200 mW, SOD-323
U1
MCP16331
Microchip
Technology Inc.
MCP16331-E/CH
MCP16331-E/MNY
MCP16331, 500 kHz Buck Switcher, 50V,
500 mA
FIGURE 6-2:
DS20005308C-page 26
Part Number
Comment
C5750X7S2A106M230KB Capacitor, 10 µF, 100V, X7S, 2220
Resistor, 10.0 KΩ, 1/10W, 1%, 0603, SMD
Diode Schottky, 100V, 1A, SMB
Typical Application, 15V-50V Input; 12V Output.
2014-2016 Microchip Technology Inc.
MCP16331
DZ
Boost Diode
U1
BOOST
CB
EN
12V
VIN
L
MCP16331
VOUT
2V
SW
VIN
COUT
FW Diode
CIN
GND
RTOP
FB
RBOT
Component
Value
Manufacturer
2 x 10 µF
Taiyo Yuden
Co., Ltd.
JMK212B7106KG-T Capacitor, Ceramic, 10 µF, 25V, X7R,
10%, 1206
COUT
22 µF
Taiyo Yuden
Co., Ltd.
JMK316B7226ML-T Capacitor, Ceramic, 22 µF, 6.3V, X7R,
1206
L
10 µH
Coilcraft®
MSS4020-103ML
10 µH Shielded Power Inductor
RTOP
15 k
Panasonic® - ECG
ERJ-3EKF1502V
Resistor, 15.0 KΩ, 1/10W, 1%, 0603, SMD
RBOT
10 k
Panasonic - ECG
ERJ-3EKF1002V
Resistor, 10.0 KΩ, 1/10W, 1%, 0603, SMD
FW Diode
PD3S
Diodes Incorporated®
PD3S120L-7
Diode Schottky, 1A, 20V, POWERDI323
Boost Diode
1N4148
Diodes Incorporated
1N4148WS-7-F
Diode Switch, 75V, 200 mW, SOD-323
CB
100 nF
AVX Corporation
0603YC104KAT2A
Capacitor, 0.1 µF, 16V, Ceramic, X7R,
0603, 10%
DZ
7.5V
Zener
Diodes Incorporated
MMSZ5236BS-7-F
Diode Zener, 7.5V, 200 mW, SOD-323
U1
MCP16331
Microchip
Technology Inc.
MCP16331-E/CH
MCP16331-E/MNY
MCP16331, 500 kHz Buck Switcher, 50V,
500 mA
CIN
FIGURE 6-3:
Part Number
Comment
Typical Application, 12V Input; 2V Output at 500 mA.
2014-2016 Microchip Technology Inc.
DS20005308C-page 27
MCP16331
Boost Diode
DZ
CZ
U1
BOOST
RZ
CB
EN
VIN
L
MCP16331
2.5V
VIN
10V to 16V
VOUT
SW
COUT
FW Diode
CIN
GND
RTOP
FB
RBOT
Component
Value
Manufacturer
2 x 10 µF
Taiyo Yuden
Co., Ltd.
JMK212B7106KG-T Capacitor, Ceramic, 10 µF, 25V, X7R,
10%, 1206
COUT
22 µF
Taiyo Yuden
Co., Ltd.
JMK316B7226ML-T Capacitor, Ceramic, 22 µF, 6.3V, X7R,
1206
L
12 µH
Coilcraft®
LPS4414-123MLB
LPS4414, 12 µH, Shielded Power Inductor
21.5 k
Panasonic® - ECG
ERJ-3EKF2152V
Resistor, 21.5 KΩ, 1/10W, 1%, 0603, SMD
CIN
RTOP
Part Number
Comment
10 k
Panasonic - ECG
ERJ-3EKF1002V
DFLS120
Diodes
Incorporated®
DFLS120L-7
Boost Diode
1N4148
Diodes
Incorporated
1N4148WS-7-F
Diode Switch, 75V, 200 mW, SOD-323
CB
100 nF
AVX Corporation
0603YC104KAT2A
Capacitor, 0.1 µF, 16V, Ceramic, X7R,
0603, 10%
DZ
5.1V
Zener
Diodes
Incorporated
BZT52C5V1S
Diode Zener, 5.1V, 200 mW, SOD-323
CZ
1 µF
Taiyo Yuden
Co., Ltd.
RZ
1 k
Panasonic - ECG
U1
MCP16331
Microchip
Technology Inc.
RBOT
FW Diode
FIGURE 6-4:
DS20005308C-page 28
Resistor, 10.0 KΩ, 1/10W, 1%, 0603, SMD
Diode Schottky, 20V, 1A, POWERDI123
LMK107B7105KA-T Capacitor, Ceramic, 1.0 µF, 10V, X7R,
0603
ERJ-8ENF1001V
Resistor, 1.00 kΩ, 1/4W, 1%, 1206, SMD
MCP16331-E/CH MCP16331, 500 kHz Buck Switcher, 50V,
MCP16331-E/MNY 500 mA
Typical Application, 10V to 16V VIN to 2.5V VOUT.
2014-2016 Microchip Technology Inc.
MCP16331
U1
Boost Diode
EN
BOOST
CB
L
VIN
MCP16331
3.3V
VIN
4V to 50V
VOUT
SW
COUT
FW Diode
CIN
GND
RTOP
FB
RBOT
Component
CIN
Value
2 x 10 µF
Manufacturer
Part Number
Comment
TDK Corporation C5750X7S2A106M230KB Capacitor, 10 µF, 100V, X7S, 2220
COUT
10 µF
Taiyo Yuden
JMK107BJ106MA-T
L
15 µH
Coilcraft®
LPS3015-153MLB
Inductor Power, 15 µH, 0.61A, SMD
31.6 k
Panasonic® - ECG
ERJ-2RKF3162X
Resistor, 31.6 KΩ, 1/10W, 1%, 0402, SMD
Resistor, 10.0 KΩ, 1/10W, 1%, 0603, SMD
RTOP
RBOT
Capacitor, Ceramic, 10 µF, 6.3V, X5R,
0603
10 k
Panasonic - ECG
ERJ-3EKF1002V
BAT46WH
NXP
Semiconductors
BAT46WH
Boost Diode
1N4148
Diodes
Incorporated®
1N4148WS-7-F
Diode Switch, 75V, 200 mW, SOD-323
CB
100 nF
TDK Corporation
C1005X5R0J104M
Capacitor, Ceramic, 0.10 µF, 6.3V, X5R,
0402
U1
MCP16331
Microchip
Technology Inc.
MCP16331-E/CH
MCP16331-E/MNY
MCP16331, 500 kHz Buck Switcher,
50V, 500 mA
FW Diode
FIGURE 6-5:
BAT46WH - Diode, Schottky, 100V,
0.25A, SOD123F
Typical Application, 4V to 50V VIN to 3.3V VOUT at 150 mA.
2014-2016 Microchip Technology Inc.
DS20005308C-page 29
MCP16331
7.0
NON-TYPICAL APPLICATION
CIRCUITS
For additional information, please refer to the Application
Note: AN2102 “Designing Applications with MCP16331
High-Input Voltage Buck Converter” (DS00002102),
which can be found on the www.microchip.com web site.
DB
U1
BST
VIN
9V-16V
L
22 µH
VIN
SW
CIN
2 x 10 µF
OFF
ON
RT
52.3 k
COUT
2 x 10 µF
FB
EN
RB
10 k
GND
Component
GND
D
2A, 60V
MCP16331
GND
1N4148
CB
0.1 µF
Value
Manufacturer
CIN
2 x 10 µF
TDK Corporation
C3225X7R1H106M250AC Capacitor, Ceramic, 10 µF, 50V, 20%,
X7R, SMD, 1210
COUT
2 x 10 µF
TDK Corporation
C3216X7R1E106K160AB Capacitor, Ceramic, 10 µF, 25V, 10%,
X7R, SMD, 1206
22 µH
Coilcraft®
RTOP
52.3 k
Panasonic® - ECG
ERJPA3F5232V
Resistor, 52.3 KΩ, 1/10W, 1%, 0603, SMD
RBOT
10 k
Panasonic - ECG
ERJ-3EKF1002V
Resistor, 10.0 KΩ, 1/10W, 1%, 0603, SMD
L
D
STPS2L60A STMicroelectronics
Part Number
VOUT
-5V
MSS1048-223MLC
STPS2L60A
Comment
MSS1048-223MLC, 22 µH, Shielded
Power Inductor
Schottky, 60V, 2A, SMA
DB
1N4148
Diodes
Incorporated®
1N4148WS-7-F
Diode Switch, 75V, 200 mW, SOD-323
CB
100 nF
AVX Corporation
0603YC104KAT2A
Capacitor, 0.1 µF, 16V, Ceramic, X7R,
0603, 10%
U1
MCP16331
Microchip
Technology Inc.
MCP16331-E/CH
MCP16331-E/MNY
MCP16331, 500 kHz Buck Switcher, 50V,
500 mA
FIGURE 7-1:
DS20005308C-page 30
Inverting Buck-Boost Application, 9V-16V VIN to -5V VOUT.
2014-2016 Microchip Technology Inc.
MCP16331
CB
0.1 µF
U1
VIN
4.5V-18V
BST
VIN
D3
DZ
1N4148
7V5
L
56 µH
SW
CIN
2 x 10 µF
R1
MCP16331
4.7
OFF
GND
Component
Value
Q1
RT
140 k
COUT
2 x 10 µF
FB
EN
ON
VOUT
12V
D2
Manufacturer
D1
2A, 60V
Part Number
RB
10 k
Comment
CIN
2 x 10 µF
TDK Corporation C3225X7R1H106M250AC Capacitor, Ceramic, 10 µF, 50V, 20%,
X7R, SMD, 1210
COUT
2 x 10 µF
TDK Corporation
L
56 µH
Coilcraft®
MSS1048-563MLC
RTOP
140 k
Panasonic® - ECG
ERJP03F1403V
RBOT
10 k
Panasonic - ECG
ERJ-3EKF1002V
Resistor, 10.0 KΩ, 1/10W, 1%, 0603, SMD
R1
4.7
Panasonic - ECG
ERJ-B3BF4R7V
Resistor, TKF, 4.7R, 1%, 1/10W, SMD,
0805
D1, D2
STPS2L60A STMicroelectronics
C3216X7R1E106K160AB Capacitor, Ceramic, 10 µF, 25V, 10%,
X7R, SMD, 1206
STPS2L60A
MSS1048-563MLC, 56 µH, Shielded
Power Inductor
Resistor, 140 KΩ, 1/10W, 1%, 0603, SMD
Schottky, 60V, 2A, SMA
D3
1N4148
Diodes
Incorporated®
1N4148WS-7-F
Diode Switch, 75V, 200 mW, SOD-323
DZ
7.5V
Diodes
Incorporated
BZT52C7V5-7-F
Zener Diode, 7.5V, 500 mW, SOD-123
CB
100 nF
AVX Corporation
0603YC104KAT2A
Capacitor, 0.1 µF, 16V, Ceramic, X7R,
0603, 10%
Q1
FDN359AN
Fairchild
Semiconductor®
FDN359AN
U1
MCP16331
Microchip
Technology Inc.
MCP16331-E/CH
MCP16331-E/MNY
FIGURE 7-2:
Transistor, FET N-CH, FDN359AN, 30V,
2.7A, 460 mW, SOT-23-3
MCP16331, 500 kHz Buck Switcher,
50V, 500 mA
Non-Inverting Buck-Boost Application, 4.5V-18V VIN to 12V VOUT.
2014-2016 Microchip Technology Inc.
DS20005308C-page 31
MCP16331
VOUT1S
5V
D1
L1B(1)
10 µH
U1
C2
1 µF
C1
10 µF
GND
SGND
CB
1N4148
0.1 µF
BST
VIN
SW
MCP16331
ON
10 µH
D2
2A, 60V
Component
CIN
COUT, C1
C2, C3
L1
RT
RB
D1
D2
DB
CB
U1
U2
RT
52.3 k
COUT
2 x 10 µF
FB
EN
RB
10 k
GND
Note 1:
2:
VOUT
5V
L1A(1)
CIN
2 x 10 µF
OFF
C3
1 µF
SGND
DB
U2
VIN
10V-40V
VOUT2S
3.3V
VOUT
VIN
MCP1755
L1A and L1B are mutually coupled.
Please refer to the Application Note: AN2102 “Designing Applications with MCP16331 High-Input
Voltage Buck Converter” (DS00002102), which can be found on the www.microchip.com web site.
Value
Manufacturer
2 x 10 µF
TDK Corporation
Part Number
Comment
C3225X7R1H106M250AC Capacitor, Ceramic, 10 µF, 50V, 20%,
X7R, SMD, 1210
10 µF
TDK Corporation
C3216X7R1E106K160AB Capacitor, Ceramic, 10 µF, 25V, 10%,
X7R, SMD, 1206
1 µF
TDK Corporation CGA4J3X7R1E105K125AB Capacitor, Ceramic,1 µF, 25V, 10%, X7R,
SMD, 0805
®
10 µH
Wurth Elektronik
744874100
744874100, 10 µH, Shielded Coupled
Inductors
52.3 k
Panasonic® - ECG
ERJPA3F5232V
Resistor, 52.3 KΩ, 1/10W, 1%, 0603, SMD
10 k
Panasonic - ECG
ERJ-3EKF1002V
Resistor, 10.0 KΩ, 1/10W, 1%, 0603, SMD
MBR0530
Fairchild
MBR0530
Schottky Rectifier, 30V, 500 mA, SOD-123
Semiconductor®
STPS2L60A STMicroelectronics
STPS2L60A
Schottky, 60V, 2A, SMA
1N4148
Diodes
1N4148WS-7-F
Diode Switch, 75V, 200 mW, SOD-323
Incorporated®
100 nF
AVX Corporation
0603YC104KAT2A
Capacitor, 0.1 µF, 16V, Ceramic, X7R,
0603, 10%
MCP1755
Microchip
MCP1755S-3302E/DB
MCP1755, 3.3V LDO, 300 mA, SOT-223-3
Technology Inc.
MCP16331
Microchip
MCP16331-E/CH
MCP16331, 500 kHz Buck Switcher, 50V,
Technology Inc.
MCP16331-E/MNY
500 mA
FIGURE 7-3:
Voltages.(2)
DS20005308C-page 32
Multiple Outputs Buck Converter 10V-40V Input Voltage to 2x5V and 3.3V Output
2014-2016 Microchip Technology Inc.
MCP16331
8.0
PACKAGING INFORMATION
8.1
Package Marking Information
6-Lead SOT-23
Example
MF25
XXNN
8-Lead TDFN (2x3x0.75 mm)
Example
ACD
615
25
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3)
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
2014-2016 Microchip Technology Inc.
DS20005308C-page 33
MCP16331
6-Lead Plastic Small Outline Transistor (CH, CHY) [SOT-23]
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note:
2X
0.15 C A-B
D
e1
A
D
E
2
E1
E
E1
2
2X
0.15 C D
2X
0.20 C A-B
e
6X b
B
0.20
C A-B D
TOP VIEW
C
A
A2
SEATING PLANE
6X
A1
0.10 C
SIDE VIEW
R1
L2
R
c
GAUGE PLANE
L
Ĭ
(L1)
END VIEW
Microchip Technology Drawing C04-028C (CH) Sheet 1 of 2
DS20005308C-page 34
2014-2016 Microchip Technology Inc.
MCP16331
6-Lead Plastic Small Outline Transistor (CH, CHY) [SOT-23]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units
Dimension Limits
N
Number of Leads
e
Pitch
Outside lead pitch
e1
Overall Height
A
Molded Package Thickness
A2
Standoff
A1
Overall Width
E
Molded Package Width
E1
Overall Length
D
Foot Length
L
Footprint
L1
Seating Plane to Gauge Plane
L1
φ
Foot Angle
c
Lead Thickness
Lead Width
b
MIN
0.90
0.89
0.00
0.30
0°
0.08
0.20
MILLIMETERS
NOM
6
0.95 BSC
1.90 BSC
1.15
2.80 BSC
1.60 BSC
2.90 BSC
0.45
0.60 REF
0.25 BSC
-
MAX
1.45
1.30
0.15
0.60
10°
0.26
0.51
Notes:
1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or
protrusions shall not exceed 0.25mm per side.
2. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Microchip Technology Drawing C04-028C (CH) Sheet 2 of 2
2014-2016 Microchip Technology Inc.
DS20005308C-page 35
MCP16331
6-Lead Plastic Small Outline Transistor (CH, CHY) [SOT-23]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
GX
Y
Z
C G
G
SILK SCREEN
X
E
RECOMMENDED LAND PATTERN
Units
Dimension Limits
E
Contact Pitch
C
Contact Pad Spacing
X
Contact Pad Width (X3)
Y
Contact Pad Length (X3)
G
Distance Between Pads
Distance Between Pads
GX
Z
Overall Width
MIN
MILLIMETERS
NOM
0.95 BSC
2.80
MAX
0.60
1.10
1.70
0.35
3.90
Notes:
1. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing No. C04-2028B (CH)
DS20005308C-page 36
2014-2016 Microchip Technology Inc.
MCP16331
8-Lead Plastic Dual Flat, No Lead Package (MN) – 2x3x0.8 mm Body [TDFN]
With 1.4x1.3 mm Exposed Pad (JEDEC Package type WDFN)
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
D
A
B
N
(DATUM A)
(DATUM B)
E
NOTE 1
2X
0.15 C
1
2
2X
0.15 C
TOP VIEW
0.10 C
C
(A3)
A
SEATING
PLANE
8X
0.08 C
A1
SIDE VIEW
0.10
C A B
D2
L
1
2
0.10
C A B
NOTE 1
E2
K
N
8X b
e
0.10
0.05
C A B
C
BOTTOM VIEW
Microchip Technology Drawing No. C04-129-MN Rev E Sheet 1 of 2
2014-2016 Microchip Technology Inc.
DS20005308C-page 37
MCP16331
8-Lead Plastic Dual Flat, No Lead Package (MN) – 2x3x0.8 mm Body [TDFN]
With 1.4x1.3 mm Exposed Pad (JEDEC Package type WDFN)
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units
Dimension Limits
N
Number of Pins
e
Pitch
A
Overall Height
A1
Standoff
Contact Thickness
A3
D
Overall Length
Overall Width
E
Exposed Pad Length
D2
Exposed Pad Width
E2
b
Contact Width
L
Contact Length
Contact-to-Exposed Pad
K
MIN
0.70
0.00
1.35
1.25
0.20
0.25
0.20
MILLIMETERS
NOM
8
0.50 BSC
0.75
0.02
0.20 REF
2.00 BSC
3.00 BSC
1.40
1.30
0.25
0.30
-
MAX
0.80
0.05
1.45
1.35
0.30
0.45
-
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Package may have one or more exposed tie bars at ends.
3. Package is saw singulated
4. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Microchip Technology Drawing No. C04-129-MN Rev E Sheet 2 of 2
DS20005308C-page 38
2014-2016 Microchip Technology Inc.
MCP16331
8-Lead Plastic Dual Flat, No Lead Package (MN) – 2x3x0.8 mm Body [TDFN]
With 1.4x1.3 mm Exposed Pad (JEDEC Package type WDFN)
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
X2
EV
8
ØV
C
Y2
EV
Y1
1
2
SILK SCREEN
X1
E
RECOMMENDED LAND PATTERN
Units
Dimension Limits
E
Contact Pitch
Optional Center Pad Width
X2
Optional Center Pad Length
Y2
Contact Pad Spacing
C
Contact Pad Width (X8)
X1
Contact Pad Length (X8)
Y1
Thermal Via Diameter
V
Thermal Via Pitch
EV
MIN
MILLIMETERS
NOM
0.50 BSC
MAX
1.60
1.50
2.90
0.25
0.85
0.30
1.00
Notes:
1. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
2. For best soldering results, thermal vias, if used, should be filled or tented to avoid solder loss during
reflow process
Microchip Technology Drawing No. C04-129-MN Rev. B
2014-2016 Microchip Technology Inc.
DS20005308C-page 39
MCP16331
NOTES:
DS20005308C-page 40
2014-2016 Microchip Technology Inc.
MCP16331
APPENDIX A:
REVISION HISTORY
Revision C (December 2016)
The following is a list of modifications:
1.
2.
3.
Updated Section 6.0 “Typical Application
Circuits”.
Added Section 7.0 “Non-Typical Application
Circuits”.
Minor typographical corrections.
Revision B (October 2014)
The following is a list of modifications:
1.
Added edits to incorporate the AEC-Q100
qualification.
Revision A (June 2014)
• Original release of this document.
2014-2016 Microchip Technology Inc.
DS20005308C-page 41
MCP16331
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
[X](1)
PART NO.
Device
Tape and Reel
Option
X
/XX
Temperature
Range
Package
Device:
MCP16331: High-Voltage Input Integrated Switch
Step-Down Regulator
MCP16331T: High-Voltage Input Integrated Switch
Step-Down Regulator (Tape and Reel)
Tape and Reel
Option:
T
= Tape and Reel(1)
Temperature Range:
E
= -40°C to +125°C
Package:
CH
= Plastic Small Outline Transistor, SOT-23, 6-Lead
MNY* = Plastic Dual Flat TDFN, 8-Lead
*Y
DS20005308C-page 42
= Nickel palladium gold manufacturing designator.
Only available on the TDFN package.
Examples:
a)
b)
MCP16331T-E/CH:
Tape and Reel,
Extended Temperature,
6-Lead SOT-23 package
MCP16331T-E/MNY: Tape and Reel,
Extended Temperature,
8-Lead TDFN package
Note 1:
Tape and Reel identifier only appears in the
catalog part number description. This identifier is used for ordering purposes and is not
printed on the device package. Check with
your Microchip Sales Office for package
availability with the Tape and Reel option.
2014-2016 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
2014-2016 Microchip Technology Inc.
Trademarks
The Microchip name and logo, the Microchip logo, AnyRate, AVR,
AVR logo, AVR Freaks, BeaconThings, BitCloud, CryptoMemory,
CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KEELOQ,
KEELOQ logo, Kleer, LANCheck, LINK MD, maXStylus,
maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB,
OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip
Designer, QTouch, RightTouch, SAM-BA, SpyNIC, SST, SST
Logo, SuperFlash, tinyAVR, UNI/O, and XMEGA are registered
trademarks of Microchip Technology Incorporated in the U.S.A.
and other countries.
ClockWorks, The Embedded Control Solutions Company,
EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS,
mTouch, Precision Edge, and Quiet-Wire are registered
trademarks of Microchip Technology Incorporated in the U.S.A.
Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any
Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo,
CodeGuard, CryptoAuthentication, CryptoCompanion,
CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average
Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial
Programming, ICSP, Inter-Chip Connectivity, JitterBlocker,
KleerNet, KleerNet logo, Mindi, MiWi, motorBench, MPASM, MPF,
MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach,
Omniscient Code Generation, PICDEM, PICDEM.net, PICkit,
PICtail, PureSilicon, QMatrix, RightTouch logo, REAL ICE, Ripple
Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI,
SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC,
USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and
ZENA are trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated in
the U.S.A.
Silicon Storage Technology is a registered trademark of Microchip
Technology Inc. in other countries.
GestIC is a registered trademark of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip Technology
Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2014-2016, Microchip Technology Incorporated, All Rights
Reserved.
ISBN: 978-1-5224-1189-5
DS20005308C-page 43
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DS20005308C-page 44
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11/07/16
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