MCP1650/51/52/53
750 kHz Boost Controller
Features
Description
• Output Power Capability Over 5 Watts
• Output Voltage Capability From 3.3V to Over
100V
• 750 kHz Gated Oscillator Switching Frequency
• Adaptable Duty Cycle for Battery or Wide-Input,
Voltage-Range Applications
• Input Voltage Range: 2.0V to 5.5V
• Capable of SEPIC and Flyback Topologies
• Shutdown Control with IQ < 0.1 µA (Typical)
• Low Operating Quiescent Current: IQ = 120 µA
• Voltage Feedback Tolerance (0.6%, Typical)
• Popular MSOP-8 Package
• Peak Current Limit Feature
• Two Undervoltage Lockout (UVLO) Options:
- 2.0V or 2.55V
• Operating Temperature Range: -40°C to +125°C
The MCP1650/51/52/53 is a 750 kHz gated oscillator
boost controller packaged in an 8 or 10-pin MSOP
package. Developed for high-power, portable applications, the gated oscillator controller can deliver 5 watts
of power to the load while consuming only 120 µA of
quiescent current at no load. The MCP1650/51/52/53
can operate over a wide input voltage range (2.0V to
5.5V) to accommodate multiple primary-cell and singlecell Li-Ion battery-powered applications, in addition to
2.8V, 3.3V and 5.0V regulated input voltages.
Applications
•
•
•
•
•
•
•
High-Power Boost Applications
High-Voltage Bias Supplies
White LED Drivers and Flashlights
Local 3.3V to 5.0V Supplies
Local 3.3V to 12V Supplies
Local 5.0V to 12V Supplies
LCD Bias Supply
An internal 750 kHz gated oscillator makes the
MCP1650/51/52/53 ideal for space-limited designs.
The high switching frequency minimizes the size of the
external inductor and capacitor, saving board space
and cost. The internal oscillator operates at two different duty cycles depending on the level of the input voltage. By changing duty cycle in this fashion, the peak
input current is reduced at high input voltages, reducing
output ripple voltage and electrical stress on power
train components. When the input voltage is low, the
duty cycle changes to a larger value in order to provide
full-power capability at a wide input voltage range
typical of battery-powered, portable applications.
The MCP1650/51/52/53 was designed to drive external
switches directly using internal low-resistance
MOSFETs.
Additional features integrated on the MCP1650/51/52/
53 family include peak input current limit, adjustable
output voltage/current, low battery detection and
power-good indication.
Package Types
8
7
6
5
VIN
NC
NC
SHDN
EXT
GND
CS
FB
EXT
GND
CS
FB
1
2
3
4
MCP1652
8-Pin MSOP
2004-2013 Microchip Technology Inc.
8
7
6
5
1
2
3
4
MCP1651
1
2
3
4
8-Pin MSOP
8
7
6
5
VIN
LBO
LBI
SHDN
10-Pin MSOP
VIN
PG
NC
SHDN
EXT
GND
CS
FB
NC
1
2
3
4
5
MCP1653
EXT
GND
CS
FB
MCP1650
8-Pin MSOP
10
9
8
7
6
VIN
PG
LBO
LBI
SHDN
DS21876B-page 1
MCP1650/51/52/53
MCP1650 Block Diagram
MCP1650
VIN
VHIGH
VLOW
DC = 80% VIN < 3.8V
DC = 56% VIN > 3.8V VHIGH
VDUTY
VIN
-
VDUTY
+
+ 1R 0.122V
1.22V
9R
ISNS
Ref
Osc.
SoftStart
ON/
OFF
+
Internal Osc. with
2 fixed Duty Cycles
OSC. OUT
CS
Current Limit
+
VREF -
GND
VLOW
SHDN
VIN
ON/OFF
Control
S
FB
Voltage Feedback
+
-
R
DR
Pulse
Latch Q
EXT
VREF
1.22V
DS21876B-page 2
2004-2013 Microchip Technology Inc.
MCP1650/51/52/53
MCP1651/2/3 Block Diagram
MCP1650/51/52/53
MCP1650 - No Features
MCP1651 - Low Battery Detection
MCP1652 - Power Good Indication
MCP1653 - Low Battery Detection and PG
MCP1653 - LBI and PG Features
MCP1651 - Low Battery Detection
VIN
1.22 Vref
LBI
+
LBO
Low Battery
Comparator
-
MCP1650
Vin
CS
SHDN
EXT
VFB
GND
Vref. (1.22V)
MCP1652 - Power Good Indication
VIN
PG
85% of Vref
+
-
+
A
2004-2013 Microchip Technology Inc.
-
Power Good
Comparators
115% of Vref
DS21876B-page 3
MCP1650/51/52/53
Timing Diagram
MCP1650/1/2/3 Timing Diagram
Osc
S
R
Q
DR
EXT
S
Latch Truth Table
S
R
Q
0
0
Qn
0
1
1
1
0
0
1
1
1
Q
Q
R
Typical Application Circuits
3.3V to 12V 100 mA Boost Converter
RSENSE
VIN
Input
Voltage
3.3V ±10%
CIN
8
GND 2
SHDN 5
10 µF
NC 6
on
off
MCP1650
0.05
CS
3
1 EXT
4 FB
7 NC
MOSFET/Schottky
Boost Combination Device
Inductor
3.3 µH
VOUT = 12V
IOUT = 0 to 100 mA
90.9 k
COUT
10 µF
Ceramic
10 k
DS21876B-page 4
2004-2013 Microchip Technology Inc.
MCP1650/51/52/53
1.0
ELECTRICAL
CHARACTERISTICS
† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may
affect device reliability.
Absolute Maximum Ratings †
VIN TO GND........................................................... 6.0V
CS,FB,LBI,LBO,SHDN,PG,EXT ............ GND – 0.3V to
VIN + 0.3V
Current at EXT pin ................................................ ±1A
Storage temperature .......................... -65°C to +150°C
Operating Junction Temperature........ -40°C to +125°C
ESD protection on all pins 4 kV HBM
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply at VIN = +2.7V to +5.5V, SHDN = High,
TJ = -40°C to +125°C. Typical values apply for VIN = 3.3V, TA +25°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
VIN
2.7
—
5.5
V
Undervoltage Lockout
(S Option)
UVLO
2.4
2.55
2.7
V
VIN rising edge
Under Voltage Lockout
(R Option)
UVLO
1.85
2.0
2.15
V
VIN rising edge
Undervoltage Hysteresis
UVLOHYST
—
117
—
mV
Shutdown Supply Current
ISHD
—
0.001
1
µA
SHDN = GND
Quiescent Supply Current
IQ
—
120
220
µA
EXT = Open
TSS
—
500
—
µs
Input Characteristics
Supply Voltage
Soft Start Time
Feedback Characteristics
VFB
1.18
1.22
1.26
V
Feedback Comparator
Hysteresis
Feedback Voltage
VHYS
—
12
23
mV
Feedback Input Bias Current
IFBlk
-50
—
50
nA
All conditions
VFB < 1.3V
Current Sense Input
ISNS-TH
75
114
155
mV
Tdly_ISNS
—
80
—
ns
EXT Driver ON Resistance
(High Side)
RHIGH
—
8
18
EXT Driver ON Resistance
(Low Side)
RLOW
—
4
12
Current Sense Threshold
Delay from Current Sense to
Output
Ext Drive
Oscillator Characteristics
Switching Frequency
FOSC
650
750
850
kHz
VLowDuty
—
3.8
—
V
DCHyst
—
92
—
mV
Low Duty Cycle
DCLOW
50
56
62
%
High Duty Cycle
DCHIGH
72
80
88
%
Low Duty Cycle Switch-Over
Voltage
Duty Cycle Switch Voltage
Hysteresis
2004-2013 Microchip Technology Inc.
VIN rising edge
DS21876B-page 5
MCP1650/51/52/53
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, all parameters apply at VIN = +2.7V to +5.5V, SHDN = High,
TJ = -40°C to +125°C. Typical values apply for VIN = 3.3V, TA +25°C.
Parameters
Sym
Min
Typ
Max
Units
Logic High Input
VIN-HIGH
50
Logic Low Input
VIN-Low
—
ISHDN
—
Conditions
—
—
% of VIN
—
15
% of VIN
5
100
nA
SHDN=VIN
LBI Input falling (All Conditions)
Shutdown Input
Input Leakage Current
Low Battery Detect (MCP1651/MCP1653 Only)
Low Battery Threshold
LBITH
1.18
1.22
1.26
V
Low Battery Threshold
Hysteresis
LBITHHYS
95
123
145
mV
Low Battery Input Leakage
Current
ILBI
—
10
—
nA
VLBI = 2.5V
Low Battery Output Voltage
VLBO
—
53
200
mV
ILB SINK = 3.2 mA, VLBI = 0V
Low Battery Output Leakage
Current
ILBO
—
0.01
1
µA
VLBI = 5.5V, VLBO = 5.5V
Time Delay from LBI to LBO
TD_LBO
—
70
—
µs
LBI Transitions from
LBITH + 0.1V to LBITH - 0.1V
Power Good Output (MCP1652/MCP1653 Only)
Power Good Threshold Low
VPGTH-L
-20
-15
-10
%
Referenced to Feedback Voltage
VPGTH-H
+10
+15
+20
%
Referenced to Feedback Voltage
VPGTH-HYS
—
5
—
%
Referenced to Feedback Voltage
(Both Low and High Thresholds)
Power Good Output Voltage
VPGOUT
—
53
200
mV
IPG SINK = 3.2 mA, VFB = 0V
Time Delay from VFB out of
regulation to Power Good
Output transition
TD_PG
—
85
—
µs
VFB Transitions from
VFBTH + 0.1V to VFBTH -0.1V
Power Good Threshold High
Power Good Threshold
Hysteresis
TEMPERATURE SPECIFICATIONS
Electrical Specifications: Unless otherwise noted, all parameters apply at VIN = +2.7V to +5.5V, SHDN = High,
TA = -40°C to +125°C. Typical values apply for VIN = 3.3V, TA = +25°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
TA
-40
—
+125
°C
TJ
-40
—
+125
°C
Thermal Resistance, MSOP-8
JA
—
208
—
°C/W Single-Layer SEMI G42-88
Board, Natural Convection
Thermal Resistance, MSOP-10
JA
—
113
—
°C/W 4-Layer JC51-7 Standard Board,
Natural Convection
Temperature Ranges
Storage Temperature Range
Operating Junction Temperature
Range
Continuous
Thermal Package Resistances
DS21876B-page 6
2004-2013 Microchip Technology Inc.
MCP1650/51/52/53
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, VIN = 3.3V, VOUT = 12V, CIN = 10 µF (x5R or X7R Ceramic), COUT = 10 µF (X5R or X7R),
IOUT = 10 mA, L = 3.3 µH, SHDN > VIH, TA = +25°C.
840
ILOAD = 0 mA
175
Oscillator Frequency (kHz)
Input Quiescent Current (µA)
200
TJ = +125°C
150
TJ = +25°C
125
TJ = - 40°C
100
75
50
820
800
VIN = 2.0V
780
VIN = 5.5V
760
VIN = 4.1V
740
VIN = 2.7V
720
2
2.5
3
3.5
4
4.5
5
5.5
6
-40 -25 -10
Input Voltage (V)
Input Quiescent Current vs.
35
50
65
80
95 110 125 140
3.85
200
ILOAD = 0 mA
175
VIN = 5.5V
VIN = 4.1V
150
125
100
VIN = 2.7V
VIN = 2.0V
75
VIN = Rising
3.84
3.83
3.82
3.81
3.80
3.79
3.78
3.77
3.76
3.75
50
-40
-25
-10
5
20
35
50
65
80
95
-40 -25 -10
110 125
Ambient Temperature (°C)
5
20
35
50
65
80
95 110 125
Ambient Temperature (°C)
FIGURE 2-2:
Input Quiescent Current vs.
Ambient Temperature.
FIGURE 2-5:
Duty Cycle Switch-Over
Voltage vs. Ambient Temperature.
94.0
Duty Cycle Switch Voltage
Hysteresis (mV)
800
Oscillator Frequency (kHz)
20
FIGURE 2-4:
Oscillator Frequency vs.
Ambient Temperature.
Duty Cycle Switch Over
Voltage (V)
Input Quiescent Current (µA)
FIGURE 2-1:
Input Voltage.
5
Ambient Temperature (°C)
780
TJ = +25°C
760
TJ = +125°C
740
720
TJ = - 40°C
700
93.5
93.0
92.5
92.0
91.5
91.0
90.5
90.0
2.7
3
3.3
3.6
3.9
4.2
4.5
4.8
5.1
5.4
5.7
Input Voltage (V)
FIGURE 2-3:
Input Voltage.
Oscillator Frequency vs.
2004-2013 Microchip Technology Inc.
6
-40 -25 -10
5
20
35
50
65
80
95 110 125
Ambient Temperature (°C)
FIGURE 2-6:
Duty Cycle Switch-Over
Hysteresis Voltage vs. Ambient Temperature.
DS21876B-page 7
MCP1650/51/52/53
Note: Unless otherwise indicated, VIN = 3.3V, VOUT = 12V, CIN = 10 µF (x5R or X7R Ceramic), COUT = 10 µF (X5R or X7R),
IOUT = 10 mA, L = 3.3 µH, SHDN > VIH, TA = +25°C.
1.230
TA = +25°C
0.8
1.225
VFB Voltage (V)
EXT Sink/Source Current (A)
1.0
ISINK
0.6
0.4
ISOURCE
0.2
TJ = +125°C
1.220
TJ = +25°C
1.215
TJ = - 40°C
1.210
0.0
1.205
2.7
3.0
3.3
3.6
3.9
4.2
4.5
4.8
5.1
5.4
5.7
6.0
2
2.5
3
Input Voltage (V)
FIGURE 2-7:
EXT Sink and Source
Current vs. Input Voltage.
FIGURE 2-10:
Voltage.
0.8
4
4.5
5
5.5
6
Feedback Voltage vs. Input
18
VIN = 3.3V
16
0.7
VFB Hysteresis (mV)
EXT Sink/Source Current (A)
3.5
Input Voltage (V)
ISINK
0.6
0.5
0.4
ISOURCE
0.3
0.2
0.1
14
TJ = +125°C
12
10
TJ = +25°C
8
TJ = - 40°C
6
4
2
0.0
0
-40
-25
-10
5
20
35
50
65
80
95
110 125
2.7
3
3.3
Ambient Temperature (°C)
3.6
3.9
4.2
4.5
4.8
5.1
5.4
5.7
6
Input Voltage (V)
FIGURE 2-8:
EXT Sink and Source
Current vs. Ambient Temperature.
FIGURE 2-11:
Feedback Voltage
Hysteresis vs. Input Voltage.
EXT Rise / Fall Time (nS)
80
70
60
2.7VFALL
50
2.7VRISE
40
30
5VRISE
20
5VFALL
10
0
100
150
200
250
300
350
400
450
500
External Capacitance (pF)
FIGURE 2-9:
EXT Rise and Fall Times vs.
External Capacitance.
DS21876B-page 8
FIGURE 2-12:
Dynamic Load Response.
2004-2013 Microchip Technology Inc.
MCP1650/51/52/53
Note: Unless otherwise indicated, VIN = 3.3V, VOUT = 12V, CIN = 10 µF (x5R or X7R Ceramic), COUT = 10 µF (X5R or X7R),
IOUT = 10 mA, L = 3.3 µH, SHDN > VIH, TA = +25°C.
TA = 25°C
IOUT = 100 mA
89
Efficiency (%)
87
85
83
81
79
77
75
2.7
3.0
3.3
3.6
3.9
4.2
4.5
4.8
5.1
5.4
5.7
6.0
Input Votlage (V)
FIGURE 2-13:
Dynamic Line Response.
FIGURE 2-16:
Efficiency vs. Input Voltage.
90
TA = 25°C
VIN = 3.3V
Efficiency (%)
85
80
75
70
65
60
10.0
20.0
30.0
40.0
50.0
60.0
70.0
80.0
90.0 100.0
Load Current (mA)
FIGURE 2-14:
Voltage).
Power-Up Timing (Input
FIGURE 2-17:
Efficiency vs. Load Current.
Output Voltage (V)
12.16
TA = 25°C
IOUT = 100 mA
12.15
12.14
12.13
12.12
12.11
12.10
2.7 3.0
3.3
3.6
3.9
4.2
4.5
4.8
5.1
5.4
5.7 6.0
Input Voltage (V)
FIGURE 2-15:
(Shutdown).
Power-Up Timing
2004-2013 Microchip Technology Inc.
FIGURE 2-18:
Output Voltage vs. Input
Voltage (Line Regulation).
DS21876B-page 9
MCP1650/51/52/53
Note: Unless otherwise indicated, VIN = 3.3V, VOUT = 12V, CIN = 10 µF (x5R or X7R Ceramic), COUT = 10 µF (X5R or X7R),
IOUT = 10 mA, L = 3.3 µH, SHDN > VIH, TA = +25°C.
12.17
129
LBI Hysteresis Voltage (mV)
TA = +25°C
Output Voltage (V)
12.16
VIN = 3.3V
12.15
12.14
12.13
VIN = 4.3V
12.12
12.11
12.10
10
20
30
40
50
60
70
80
90
TJ = +125°C
128
127
126
125
TJ = +25°C
124
123
TJ = - 40°C
122
121
120
100
2
2.5
3
Output Current (mA)
FIGURE 2-19:
Output Voltage vs. Output
Current (Load Regulation).
FIGURE 2-22:
Input Voltage.
0.26
4
4.5
5
5.5
6
LBI Hysteresis Voltage vs.
250
0.22
LBO Output Voltage (mV)
TA = +25°C
0.24
VOUT Ripple PK-PK (V)
3.5
Input Votlage (V)
IOUT = 100mA
0.20
0.18
0.16
0.14
0.12
0.10
200
TJ = +125°C
150
100
TJ = +25°C
50
TJ = - 40°C
0
2.7
3.0
3.3
3.6
3.9
4.2
4.5
4.8
5.1
5.4
5.7
6.0
0
Input Voltage (V)
FIGURE 2-20:
Input Voltage.
2
4
6
8
10
LBO Sink Current (mA)
Output Voltage Ripple vs.
FIGURE 2-23:
LBO Output Voltage vs.
LBO Sink Current.
LBI Threshold Voltage (V)
1.230
1.225
TJ = +125°C
1.220
TJ = +25°C
1.215
TJ = - 40°C
1.210
1.205
2
2.5
3
3.5
4
4.5
5
5.5
6
Input Voltage (V)
FIGURE 2-21:
Input Voltage.
DS21876B-page 10
LBI Threshold Voltage vs.
FIGURE 2-24:
LBO Output Timing.
2004-2013 Microchip Technology Inc.
MCP1650/51/52/53
Note: Unless otherwise indicated, VIN = 3.3V, VOUT = 12V, CIN = 10 µF (x5R or X7R Ceramic), COUT = 10 µF (X5R or X7R),
PG Threshold and Hysteresis
(% of VOUT)
20
PGTH(HIGH)
Current Sense Threshold (mV)
IOUT = 10 mA, L = 3.3 µH, SHDN > VIH, TA = +25°C.
TA = 25°C
15
10
PGTH(Hysteresis)
5
0
-5
-10
PGTH(LOW)
-15
-20
2.7
3
3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7
116
114
112
TJ = +125°C
110
108
TJ = +25°C
106
TJ = - 40°C
104
2
6
2.5
3
Input Voltage (V)
FIGURE 2-25:
PG Threshold and
Hysteresis Percentage vs. Input Voltage.
FIGURE 2-28:
vs. Input Voltage.
4
4.5
5
5.5
6
Current Sense Threshold
20.0
VEXT RON HIGH (Ohms)
250
PG Ouput Voltage (mV)
3.5
Input Voltage (V)
200
TJ = +125°C
150
100
TJ = +25°C
50
TJ = - 40°C
16.0
TJ = +125°C
12.0
8.0
TJ = - 40°C
4.0
TJ = +25°C
0
0.0
0
2
4
6
8
10
2
2.5
3
PG Output Sink Current (mA)
FIGURE 2-26:
Current.
PG Output Voltage vs. Sink
3.5
4
4.5
5
5.5
6
Input Voltage (V)
VEXT High Output Voltage
FIGURE 2-29:
vs. Input Voltage.
VEXT RON Low (Ohms)
8.0
7.0
6.0
TJ = +125°C
5.0
4.0
TJ = - 40°C
3.0
2.0
TJ = +25°C
1.0
0.0
2
2.5
3
3.5
4
4.5
5
5.5
6
Input Voltage (V)
FIGURE 2-27:
PG Timing.
2004-2013 Microchip Technology Inc.
FIGURE 2-30:
vs. Input Voltage.
VEXT Low Output Voltage
DS21876B-page 11
MCP1650/51/52/53
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
Pin No.
Pin No.
Pin No.
Pin No.
MCP1650 MCP1651 MCP1652 MCP1653
3.1
Symbol
1
1
1
1
EXT
External Gate Drive
2
2
2
2
GND
Ground
3
3
3
3
CS
Current Sense
4
4
4
4
FB
Feedback Input
5
5
5
6
SHDN
—
6
—
7
LBI
Low Battery Input
—
7
—
8
LBO
Low Battery Output
—
—
7
9
PG
Power Good Output
8
8
8
10
VIN
Input Voltage
External Gate Drive (EXT)
EXT is the output pin that drives the external N-channel
MOSFET on and off during boost operation. EXT is
equal to GND for SHDN or UVLO conditions.
3.2
Current Sense (CS)
Input peak current is sensed on CS through the external current sense resistor. When the sensed current is
converted to a voltage, the current sense threshold is
122 mV below VIN typical. If that threshold is exceeded,
the pulse is terminated asynchronously.
3.4
Feedback Input (FB)
Connect output voltage of boost converter through
external resistor divider to the FB pin for voltage
regulation. The nominal voltage that is compared to this
input for pulse termination is 1.22V.
3.5
Shutdown
3.6
Low Battery Input (LBI)
LBI is the input pin for the low battery comparator.
When the voltage on this pin falls below the nominal
1.22V threshold setting, the LBO (Low Battery Output)
open-drain is active-low.
Circuit Ground (GND)
Connect the GND pin to circuit ground. See layout
guidelines for suggested grounding physical layout.
3.3
Function
Shutdown Input (SHDN)
3.7
Low Battery Output (LBO)
LBO is an active-low, open-drain output capable of
sinking 10 mA when the LBI pin is below the threshold
voltage. LBO is high-impedance during SHDN or UVLO
conditions.
3.8
Power Good (PG)
PG is an active-high, open-drain output capable of
sinking 10 mA when the FB input pin is 15% below its
typical value or more than 15% above its typical value,
indicating that the output voltage is out of regulation.
PG is high impedance during SHDN or UVLO
condition.
3.9
Input Voltage (VIN)
VIN is an input supply pin. Tie 2.7V to 5.5V input power
source.
The SHDN input is used to turn the boost converter on
and off. For normal operation, tie this pin high or to VIN.
To turn off the device, tie this pin to low or ground.
DS21876B-page 12
2004-2013 Microchip Technology Inc.
MCP1650/51/52/53
4.0
DETAILED DESCRIPTION
4.1
Device Overview
The MCP1650/51/52/53 is a gated oscillator boost
controller. By adding an external N-channel MOSFET,
schottky diode and boost inductor, high-output power
applications can be achieved. The 750 kHz hysteretic
gated oscillator architecture enables the use of small,
low-cost external components. By using a hysteretic
approach, no compensation components are
necessary for the stability of the regulator output.
Output voltage regulation is accomplished by
comparing the output voltage (sensed through an
external resistor divider) to a reference internal to the
MCP1650/51/52/53. When the sensed output voltage
is below the reference, the EXT pin pulses the external
N-channel MOSFET on and off at the 750 kHz gated
oscillator frequency. Energy is stored in the boost
inductor when the external N-channel MOSFET is on
and is delivered to the load through the external
Schottky diode when the MOSFET is turned off.
Several pulses may be required to deliver enough
energy to pump the output voltage above the upper
hysteretic limit. Once above the hysteretic limit, the
internal oscillator is no longer gated to the EXT pin and
no energy is transferred from input to output.
The peak current in the MOSFET is sensed to limit its
maximum value. As with all boost topology converters,
even though the MOSFET is turned off, there is still a
DC path through the boost inductor and diode to the
load. Additional protection circuity, such as fuses, are
recommended for short circuit protection.
4.2
Input Voltage
The range of input voltage for the MCP1650/51/52/53
family of devices is specified from 2.7V to 5.5V. For the
S-option devices, the undervoltage lockout (UVLO)
feature will turn the boost controller off once the input
voltage falls below 2.55V, typical. For the R-option
devices, the UVLO is set to 2.0V. The R-option devices
are recommended for use when “bootstrapping” the
output voltage back to the input. The input of the
MCP1650/51/52/53 device is supplied by the output
voltage during boost operation. This can be used to
derive output voltages from input voltages that start up
at approximately 2V (2-cell alkaline batteries).
2004-2013 Microchip Technology Inc.
4.3
Fixed Duty Cycle
The MCP1650/51/52/53 family utilizes a unique twostep maximum duty cycle architecture to minimize input
peak current and improve output ripple voltage for wide
input voltage operating ranges. When the input voltage
is below 3.8V, the duty cycle is typically 80%. For input
voltages above 3.8V, the duty cycle is typically 56%. By
decreasing the duty cycle at higher input voltages, the
input peak current is reduced. For low input voltages, a
longer duty cycle stores more energy during the ontime of the boost MOSFET. For applications that span
the 3.8V input range, the inductor value should be
selected to meet not only the minimum input voltage at
80% duty cycle, but 3.8V at 56% duty cycle as well.
Refer to Section 5.0 “Application Circuits/Issues”
for more information about selecting inductor values.
4.4
Shutdown Input Operation
The SHDN pin is used to turn the MCP1650/51/52/53
on and off. When the SHDN pin is tied low, the
MCP1650/51/52/53 is off. When tied high, the
MCP1650/51/52/53 will be enabled and begin boost
operation as long as the input voltage is not below the
UVLO threshold.
4.5
Soft-Start Operation
When power is first applied to the MCP1650/51/52/53,
the internal reference initialization is controlled to slow
down the start-up of the boost output voltage.This is
done to reduce high inrush current required from the
source. High inrush currents can cause the source
voltage to drop suddenly and trip the UVLO threshold,
shutting down the converter prior to it reaching steadystate operation.
4.6
Gated Oscillator Architecture
A 750 kHz internal oscillator is used as the base
frequency of the MCP1650/51/52/53. The oscillator
duty cycle is typically 80% when the input voltage is
below a nominal value of 3.8V, and 56% when the
input voltage is above a nominal value of 3.8V. Two
duty cycles are provided to reduce the peak inductor
current in applications where the input voltage varies
over a wide range. High-peak inductor current results
in undesirable high-output ripple voltages. For
applications that have input voltage that cross this
3.8V boundary, both duty cycle conditions need to be
examined to determine which one has the least
amount of energy storage. Refer to Section 5.0
“Application Circuits/Issues” for more information
about design considerations.
DS21876B-page 13
MCP1650/51/52/53
4.7
FB Pin
4.11
Low Battery Detect
The output voltage is fed back through a resistor divider
to the FB pin. It is then compared to an internal 1.22V
reference. When the divided-down output is below the
internal reference, the internal oscillator is gated on
and the EXT pin pulses the external N-channel
MOSFET on and off to transfer energy from the source
to the load at 750 kHz. This will cause the output voltage to rise until it is above the 1.22V threshold, thereby
gating the internal oscillator off. Hysteresis is provided
within the comparator and is typically 12 mV. The rate
at which the oscillator is gated on and off is determined
by the input voltage, load current, hysteresis voltage
and inductance. The output ripple voltage will vary
depending on the input voltage, load current,
hysteresis voltage and inductance.
The Low-Battery Detect (MCP1651 and MCP1653
only) feature can be used to determine when the LBI
input voltage has fallen below a predetermined
threshold. The low-battery detect comparator
continuously monitors the voltage on the LBI pin. When
the voltage on the LBI pin is above the 1.22V + 123 mV
hysteresis, the LBO pin will be high-impedance (opendrain). When in the high-impedance state, the leakage
current into the LBO pin is typically less than 0.1 µA. As
the voltage on the LBI pin decreases and is lower than
the 1.22V typical threshold, the LBO pin will transition
to a low state and is capable of sinking up to 10 mA.
123 mV of hysteresis is provided to prevent chattering
of the LBO pin as a result of battery input impedance
and boost input current.
4.8
4.12
PWM Latch
The gated oscillator is self-latched to prevent double
and sporadic pulsing. The reset into the latch is asynchronous and can terminate the pulse during the ontime of the duty cycle. The reset can be accomplished
by the feedback voltage comparator or the current limit
comparator.
4.9
Peak Inductor Current
The external switch peak current is sensed on the CS
pin across an optional external current sense resistor.
If the CS pin falls more than 122 mV (typical) below
VIN, the current limit comparator is set and the pulse is
terminated. This prevents the current from getting too
high and damaging the N-channel MOSFET. In the
event of a short circuit, the switch current will be low
due to the current limit. However, there is a DC path
from the input through the inductor and external diode.
This is true for all boost-derived topologies and additional protection circuitry is necessary to prevent
catastrophic damage.
4.10
EXT Output Driver
Power Good Output
The Power Good Output feature (MCP1652 and
MCP1653 only) monitors the divided-down voltage
feedback into the FB pin. When the output voltage falls
more than 15% (typical) below the regulated set point,
the power good (PG) output pin will transition from a
high-impedance state (open-drain) to a low state
capable of sinking 10 mA. If the output voltage rises
more than 15% (typical) above the regulated set point,
the PG output pin will transition from high to low.
4.13
4.13.1
Device Protection
OVERCURRENT LIMIT
The Current Sense (CS) input pin is used to sense the
peak input current of the boost converter. This can be
used to limit how high the peak inductor current can
reach. The current sense feature is optional and can be
bypassed by connecting the VIN input pin to the CS
input pin. Because of the path from input through the
boost inductor and boost diode to output, the boost
topology cannot support a short circuit without
additional circuitry. This is typical of all boost regulators.
The EXT output pin is designed to directly drive
external N-channel MOSFETs and is capable of
sourcing 400 mA (typical) and sinking 800 mA (typical)
for fast on and off transitions. The top side of the EXT
driver is connected directly to VIN, while the low side of
the driver is tied to GND, providing rail-to-rail drive
capability. Design flexibility is added by connecting an
external resistor in series with the N-channel MOSFET
to control the speed of the turn on and off. By slowing
the transition speed down, there will be less highfrequency noise. Speeding the transition up produces
higher efficiency.
DS21876B-page 14
2004-2013 Microchip Technology Inc.
MCP1650/51/52/53
5.0
APPLICATION CIRCUITS/
ISSUES
5.1
Typical Applications
5.1.1
NON-BOOTSTRAP BOOST
APPLICATIONS
Non-bootstrap applications are typically used when the
output voltage is boosted to a voltage that is higher
than the rated voltage of the MCP1650/51/52/53. For
non-bootstrap applications, the input voltage is
connected to the boost inductor through the optional
current sense resistor and the VIN pin of the MCP1650/
51/52/53. For this type of application, the S-option
devices (UVLO at 2.55V, typical) should be used. The
gated oscillator duty cycle will be dependant on the
value of the voltage on VIN. If VIN > 3.8V, the duty cycle
will be 56%. If VIN < 3.8V, the duty cycle will be 80%.
The MCP1650/51/52/53 boost controller can be used in
several different configurations and in many different
applications. For applications that require minimum
space, low cost and high efficiency, the MCP1650/51/
52/53 product family is a good choice. It can be used in
boost, buck-boost, Single-Ended Primary Inductive
Converters (SEPIC), as well as in flyback converter
topologies.
In non-bootstrap applications, output voltages of over
100V can be generated. Even though the MCP1650/
51/52/53 device is not connected to the high boost
output voltage, the drain of the external MOSFET and
reverse voltage of the external Schottky diode are
connected. The output voltage capacitor must also be
rated for the output voltage.
3.3V to 12V 100 mA Boost Converter
RSENSE
0.05
VIN
GND
Input
Voltage
3.3V ±10%
CIN
SHDN
10 µF
off
on
3
8
2
5
NC 6
MCP1650
1
4
CS
MOSFET/Schottky
Boost
Combination Device
Inductor
3.3 µH
VOUT = 12V
IOUT = 0 to 100 mA
EXT
FB
90.9 k
7 NC
COUT
10 µF
Ceramic
10 k
FIGURE 5-1:
Typical Non-Bootstrap Application Circuit (MCP1650/51/52/53).
2004-2013 Microchip Technology Inc.
DS21876B-page 15
MCP1650/51/52/53
5.1.2
BOOTSTRAP BOOST
APPLICATIONS
to start up with the input voltage below 2.7V. For this
type of application, the MCP1650/51/52/53 will start off
of the lower 2.0V input and begin to boost the output up
to its regulated value. As the output rises, so does the
input voltage of the MCP1650/51/52/53. This provides
a solution for 2-cell alkaline inputs for output voltages
that are less than 6V.
For bootstrap configurations, the higher-regulated
boost output voltage is used to power the MCP1650/
51/52/53. This provides a constant higher voltage used
to drive the external MOSFET. The R-option devices
(UVLO < 2.0V) can be used for applications that need
Li-Ion Input to 5.0V 1A Regulated Output (Bootstrap) with MCP1652 Power Good Output
Schottky Diode
Vout = 5V
Iout = 1A
3.3 µH
10
VIN
GND
0.1 µF
Input
Voltage
2.8V to 4.2V
SHDN
Cin
47 µF
off
on
3
8
2
CS
N-Channel
MOSFET
1 EXT
MCP1652
5
4
NC 6
7
FB
3.09 k
Cout
47 µF
Ceramic
PG
0.1
Shutdown
1 k
Power Good Output
FIGURE 5-2:
5.1.3
Bootstrap Application Circuit MCP1650/51/52/53.
with the previous boost-converter applications, the
SEPIC converter can be used in either a bootstrap or
non-bootstrap configuration. The SEPIC converter can
be a very popular topology for driving high-power
LEDs. For many LEDs, the forward voltage drop is
approximately 3.6V, which is between the maximum
and minimum voltage range of a single-cell Li-Ion
battery, as well as 3 alkaline or nickel metal batteries.
SEPIC CONVERTER
APPLICATIONS
In many applications, the input voltage can vary above
and below the regulated output voltage. A standard
boost converter cannot be used when the output voltage is below the input voltage. In this case, the
MCP1650/51/52/53 can be used as a SEPIC controller.
A SEPIC requires 2 inductors or a single coupled
inductor, in addition to an AC coupling capacitor. As
Li-Ion Input to 3.6V 3W LED Driver (SEPIC Converter)
4.7 µF
Schottky Diode
N-Channel
MOSFET
3.3 µH
2.49 k
3.3 µH
10
VIN
GND
Input
Voltage
2.8V to 4.2V
0.1 µF
CIN
47 µF
off
SHDN
on
3
8
2
MCP1651
1
5
4
NC 6
7
IOUT = 1A
CS
EXT
FB
COUT
47 µF
Ceramic
PG
0.1
Dimming Capability
1 k
Power Good Output
3W
LED
0.2
FIGURE 5-3:
DS21876B-page 16
SEPIC Converter Application Circuit MCP1650/51/52/53.
2004-2013 Microchip Technology Inc.
MCP1650/51/52/53
5.2
Design Considerations
When developing switching power converter circuits,
there are numerous things to consider and the
MCP1650/51/52/53 family is no exception. The gated
oscillator architecture does provide a simple control
approach so that stabilizing the regulator output is an
easier task than that of a fixed-frequency regulator.
The MCP1650/51/52/53 controller utilizes an external
switch and diode allowing for a very wide range of
conversion (high voltage gain and/or high current gain).
There are practical, as well as power-conversion,
topology limitations. The MCP1650/51/52/53 gated
oscillator hysteretic mode converter has similar
limitations, as do fixed-frequency boost converters.
5.2.1
DESIGN EXAMPLE
Input Voltage = 2.8V to 4.2V
Output Voltage = 12V
Output Current = 100 mA
Oscillator Frequency = 750 kHz
Duty cycle = 80% for VIN < 3.8V
5.2.1.1
Calculations
P OUT = VOUT I OUT
Where:
POUT = 12V X 100 mA
POUT = 1.2 Watts
PIN = P OUT Efficiency
Where:
PIN = 1.2W/80%
(80% is a good efficiency estimate)
PIN = 1.5 Watts
For gated oscillator hysteretic designs, the switching
frequency is not constant and will gate several pulses
to raise the output voltage. Once the upper hysteresis
threshold is reached, the gated pulses stop and the
output will coast down at a rate determined by the output capacitor and the load. Using the gated oscillator
switching frequency and duty cycle, it is possible to
determine what the maximum boost ratio is for
continuous inductor current operation.
Duty cycle = 56% for VIN > 3.8V
Setting the output voltage:
V OUT
R TOP = R BOT ------------- – 1
V FB
Where:
RTOP = Top Resistor Value
RBOT = Bottom Resistor Value
By adjusting the external resistor divider, the output
voltage of the boost converter can be set to the desired
value. Due to the RC delay caused by the resistor
divider and the device input capacitance, resistor
values greater than 100 kare not recommended. The
feedback voltage is typically 1.22V.
For this example:
RBOT = 10 k
VOUT = 12V
VFB = 1.22V
1
VOUT = ------------- VIN
1–D
This relationship assumes that the output load current
is significant and the boost converter is operating in
Continuous Inductor Current mode. If the load is very
light or a small boost inductance is used, higher boost
ratio’s can be achieved.
Calculate at minimum VIN:
1
V OUTMAX = ---------------- 2.8
1 – 0.8
The ideal maximum output voltage is 14V. The actual
measured result will be less due to the forward voltage
drop in the boost diode, as well as other circuit losses.
For applications where the input voltage is above and
below 3.8V, another point must be checked to determine the maximum boost ratio. At 3.8V, the duty cycle
changes from 80% to 56% to minimize the peak current
in the inductor.
RTOP = 88.4 k
90.9 K was selected as the closest standard value.
1
V OUTMAX = ------------------- 3.8
1 – 0.56
For this case, VOUTMAX = 8.63V less than the required
12V output specified. The size of the inductor has to
decrease in order to operate the boost regulator in
Discontinuous Inductor Current mode.
2004-2013 Microchip Technology Inc.
DS21876B-page 17
MCP1650/51/52/53
To determine the maximum inductance for
Discontinuous Operating mode, multiply the energy
going into the inductor every switching cycle by the
number of cycles per second (switching frequency).
This number must be greater than the maximum input
power.
5.2.2
The equation for the energy flowing into the inductor is
given below. The input power to the system is equal to
energy times time.
5.2.2.1
There are a couple of key consideration’s when
selecting the proper MOSFET for the boost design. A
low RDSON logic-level N-channel MOSFET is
recommended.
1.
2
1
Energy = --- L IPK
2
The inductor peak current is calculated using the
equation below:
I PK
VIN
= -------- T ON
L
Using a typical inductance of 3.3 µH, the peak current
in the inductor is calculated below:
FSW = 750 kHz
TON = (1/FSW * Duty Cycle)
IPK (2.8V) = 905 mA
Energy (2.8V) = 1.35 µ-Joules
Power (2.8V) = 1.01 Watts
At 3.8V and below, the converter can boost to 14V
while operating in the Continuous mode.
IPK (3.8V)
=
Energy at 3.8V =
Power
=
860 mA
1.22 µ-Joules
0.914 Watts
For this example, a 3.3 µH inductor is too large, a
2.2 µH inductor is selected.
FSW = 750 kHz
TON = (1/FSW * Duty Cycle)
IPK (2.8V) = 1.36A
Energy (2.8V) = 2.02 µ-Joules
Power (2.8V) = 1.52 Watts
IPK(3.8V) = 1.29A
Energy at 3.8V = 1.83 µ-Joules
Power = 1.4 Watts
As the inductance is lowered, the peak current drawn
from the input at all loads is increased. The best choice
of inductance for high boost ratios is the maximum
inductance value necessary while maintaining
discontinuous operation.
MOSFET SELECTION
2.
MOSFET Selection Process.
Voltage Rating - The MOSFET drain-to-source
voltage must be rated for a minimum of VOUT +
VFD of the external boost diode. For example, in
the 12V output converter, a MOSFET drain-tosource voltage rating of 12V + 0.5V is
necessary. Typically, a 20V part can be used for
12V outputs.
Logic-Level RDSON - The MOSFET carries
significant current during the boost cycle on
time. During this time, the peak current in the
MOSFET can get quite high. In this example, a
SOT-23 MOSFET was used with the following
ratings:
IRLM2502 N-channel MOSFET
VBDS = 20V (Drain Source Breakdown
Voltage)
RDSON = 50 milli-ohms (VGS = 2.5V)
RDSON = 35 milli-ohms (VGS = 5.0V)
QG = Total Gate Charge = 8 nC
VGS = 0.6V to 1.2V (Gate Source Threshold
Voltage)
Selecting MOSFETs with lower RDSON is not always
better or more efficient. Lower RDSON typically results
in higher total gate charge and input capacitance, slowing the transition time of the MOSFET and resulting in
increased switching losses.
5.2.3
DIODE SELECTION
The external boost diode also switches on and off at the
switching frequency and requires very fast turn-on and
turn-off times. For most applications, Schottky diodes
are recommended. The voltage rating of the Schottky
diode must be rated for maximum boost output voltage.
For example, 12V output boost converter, the diode
should be rated for 12V plus margin. A 20V or 30V
Schottky diode is recommended for a 12V output application. Schottky diodes also have low forward-drop
characteristics, another desired feature for switching
power supply applications.
For lower boost-ratio applications (3.3V to 5.0V), a
3.3 µH inductor or larger is recommended. In these
cases, the inductor operates in Continuous Current
mode.
DS21876B-page 18
2004-2013 Microchip Technology Inc.
MCP1650/51/52/53
5.2.4
INPUT/OUTPUT CAPACITOR
SELECTION
There are no special requirements on the input or
output capacitor. For most applications, ceramic capacitors or low effective series resistance (ESR) tantalum
capacitors will provide lower output ripple voltage than
aluminum electrolytic. Care must be taken not to
exceed the manufacturer’s rated voltage or ripple current specifications. Low-value capacitors are desired
because of cost and size, but typically result in higher
output ripple voltage.
The input capacitor size is dependant on the source
impedance of the application. The hysteretic
architecture of the MCP1650/51/52/53 boost converter
can draw relatively high input current peaks at certain
line and load conditions. Small input capacitors can
produce a large ripple voltage at the input of the
converter, resulting in unsatisfactory performance.
The output capacitor plays a very important role in the
performance of the hysteretic gated oscillator
converter. In some cases, using ceramic capacitors
can result in higher output ripple voltage. This is a result
of the low ESR that ceramic capacitors exhibit. As
shown in the application schematics, 100 milli-ohms of
ESR in series with the ceramic capacitor will actually
reduce the output ripple voltage and peak input currents for some applications. The selection of the capacitor and ESR will largely determine the output ripple
voltage.
5.2.5
LOW BATTERY DETECTION
5.2.7
EXTERNAL COMPONENT
MANUFACTURES
Inductors:
Sumida®
Corporation
http://www.sumida.com/
Coilcraft®
http://www.coilcraft.com
BH
Electronics®
http://www.bhelectronics.com
Pulse
Engineering®
http://www.pulseeng.com/
Coiltronics®
http://www.cooperet.com/
Capacitors
MuRata®
http://www.murata.com/
Kemet®
http://www.kemet.com/
Taiyo-Yuden
http://www.taiyo-yuden.com/
®
AVX
http://www.avx.com/
MOSFETs and Diodes:
International
Rectifier
http://www.irf.com/
Vishay®/Siliconix
http://www.vishay.com/company/brands/siliconix/
ON
Semiconductor®
http://www.onsemi.com/
Fairchild
Semiconductor®
http://www.fairchildsemi.com/
For low battery detection, the MCP1651 or MCP1653
device should be used. The low-battery detect feature
compares the low battery input (LBI) pin to the internal
1.22V reference. If the LBI input is below the LBI
threshold voltage, the low battery output (LBO) pin will
sink current (up to 10 mA) through the internal opendrain MOSFET. If the LBI input voltage is above the LBI
threshold, the LBO output pin will be open or high
impedance.
5.2.6
POWER GOOD OUTPUT
For power good detection, the MCP1652 or MCP1653
device is ideal. The power good feature compares the
voltage on FB pin to the internal reference (±15%). If
the FB pin is more than 15% above or below the power
good threshold, the PG output will sink current through
the internal open-drain MOSFET. If the output of the
regulator is within ±15% of the output voltage, the PG
pin will be open or high-impedance.
2004-2013 Microchip Technology Inc.
DS21876B-page 19
MCP1650/51/52/53
6.0
TYPICAL LAYOUT
MCP1651R
(+2.8V to +4.8V Input to +5V Output @ 1A)
TP1
+VIN_1
TP2
+VOUT_1
®
Coilcraft
DO1813HC
L1
2A Power Train Path
F1
D1
3.3 μH
FUSE
Single-Cell Li-Ion
Input (2.8V to 4.8V)
TP4
GND
R5
73.2K
C1
47μ
0
8 V
2 IN
GND
6
LBI
5
/SHDN
CS
EXT
FB
/LBO
3
1
4
7
Q1
3.09K
IRLML2502
R8
49.9K
0
AGND
+5V Output @ 1A
TP3
GND
0
PGND
AGND AGND
0
PGND
R4
0.1
R3
C3
0.1μ
0
VR
R2
49.9K
R1
100
C2
47μ
VR
B330ADIC
0
PGND
R6
1K
MCP1651_MSOP
TP5
/SHDN1
0
AGND
R7
562
D2
LED Low Input
Keep Away From Switching Section
FIGURE 6-1:
MCP1650/51/52/53 Application Schematic.
When designing the physical layout for the MCP1650/
51/52/53, the highest priority should be placing the
boost power train components in order to minimize the
size of the high current paths. It is also important to provide ground-path separation between the large-signal
power train ground and the small signal feedback path
and feature grounds. In some cases, additional filtering
on the VIN pin is helpful to minimize MCP1650/51/52/53
input noise.
In this layout example, the critical power train paths are
from input to output, +VIN_1 to F1 to C2 to L1 to Q1 to
GND. Current will flow in this path when the switch (Q1)
is turned on. When Q1 is turned off, the path for current
flow will quickly change to +VIN_1 to F1 to L1 to D1 to
C1 to R4 to GND. When starting the layout for this application, both of these power train paths should be as
short as possible. The C2, Q1 and R4 GND connections
should all be connected to a single “Power Ground”
plane to minimize any wiring inductance.
The feedback resistor divider that sets the output
voltage should be considered sensitive and be routed
away from the power-switching components discussed
previously.
As shown in the diagram, R6, R8 and the GND pin of
the MCP1650/51/52/53 should be returned to an
analog ground plane.
The analog ground plane and power ground plane
should be connected at a single point close to the input
capacitor (C2).
Bold traces are used to represent high-current
connections and should be made as wide as is
practical.
R1 and C3 is an optional filter that reduces the
switching noise on the VIN pin of the MCP1650/51/52/
53. This should be considered for high-power
applications (> 1W) and bootstrap applications where
VIN of the MCP1650/51/52/53 is supplied by the output
voltage of the boost regulator.
DS21876B-page 20
2004-2013 Microchip Technology Inc.
MCP1650/51/52/53
Figure 6-2 represents the top wiring for the MCP1650/
51/52/53 application shown.
Figure 6-3 represents the bottom wiring for the
MCP1650/51/52/53 application shown.
As shown in Figure 6-2, the high-current wiring is short
and wide. In this example, a 1 oz. copper layer is used
for both the top and bottom layers. The ground plane
connected to C2 and R4 are connected through the
vias (holes) connecting the top and bottom layer. The
feedback signal (from TP2) is wired from the output of
the regulator around the high current switching section
to the feedback voltage divider and to the FB pin of the
MCP1650/51/52/53.
Silk-screen reference designator labels are transparent
from the top of the board. The analog ground plane and
power ground plane are connected near the ground
connection of the input capacitor (C2). This prevents
high-power, ground-circulating currents from flowing
through the analog ground plane.
FIGURE 6-3:
FIGURE 6-2:
Bottom Layer Wiring.
Top Layer Wiring.
2004-2013 Microchip Technology Inc.
DS21876B-page 21
MCP1650/51/52/53
7.0
PACKAGING INFORMATION
7.1
Package Marking Information
8-Lead MSOP (MCP1650, MCP1651, MCP1652)
Example:
1650SE
0448256
XXXXX
YWWNNN
10-Lead MSOP (MCP1653)
Example:
XXXXX
YYWWNNN
1653SE
0448256
Legend: XX...X
Y
YY
WW
NNN
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
e3
*
Note:
DS21876B-page 22
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
2004-2013 Microchip Technology Inc.
MCP1650/51/52/53
8-Lead Plastic Micro Small Outline Package (UA) (MSOP)
Note:
For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
E
E1
p
D
2
B
n
1
α
A2
A
c
φ
(F)
A1
L
β
Units
Dimension Limits
n
p
MIN
INCHES
NOM
MAX
MILLIMETERS*
NOM
8
0.65 BSC
0.85
0.75
0.00
4.90 BSC
3.00 BSC
3.00 BSC
0.60
0.40
0.95 REF
0°
0.08
0.22
5°
5°
-
MIN
Number of Pins
8
Pitch
.026 BSC
Overall Height
A
.043
A2
Molded Package Thickness
.037
.030
.033
Standoff
A1
.006
.000
Overall Width
E
.193 TYP.
Molded Package Width
E1
.118 BSC
Overall Length
D
.118 BSC
Foot Length
L
.016
.024
.031
Footprint (Reference)
F
.037 REF
φ
0°
8°
Foot Angle
c
.003
.006
.009
Lead Thickness
.009
.012
.016
Lead Width
B
α
5°
15°
Mold Draft Angle Top
β
Mold Draft Angle Bottom
5°
15°
*Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not
exceed .010" (0.254mm) per side.
MAX
1.10
0.95
0.15
0.80
8°
0.23
0.40
15°
15°
JEDEC Equivalent: MO-187
Drawing No. C04-111
2004-2013 Microchip Technology Inc.
DS21876B-page 23
MCP1650/51/52/53
10-Lead Plastic Micro Small Outline Package (UN) (MSOP)
Note:
For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
E
E1
p
D
2
B
n
1
α
A
φ
c
A2
A1
L
(F)
β
L1
Units
Dimension Limits
n
p
MIN
INCHES
NOM
10
.020 TYP
.033
.193 BSC
.118 BSC
.118 BSC
.024
.037 REF
.009
-
MAX
MILLIMETERS*
NOM
10
0.50 TYP.
0.85
0.75
0.00
4.90 BSC
3.00 BSC
3.00 BSC
0.60
0.40
0.95 REF
0°
0.08
0.15
0.23
5°
5°
-
MIN
Number of Pins
Pitch
A
.043
Overall Height
.037
A2
.030
Molded Package Thickness
A1
.006
.000
Standoff
E
Overall Width
E1
Molded Package Width
D
Overall Length
L
.031
.016
Foot Length
Footprint
F
φ
0°
8°
Foot Angle
c
.009
Lead Thickness
.003
.012
Lead Width
B
.006
α
5°
15°
Mold Draft Angle Top
β
5°
15°
Mold Draft Angle Bottom
*Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not
exceed .010" (0.254mm) per side.
MAX
1.10
0.95
0.15
0.80
8°
0.23
0.30
15°
15°
JEDEC Equivalent: MO-187
Drawing No. C04-021
DS21876B-page 24
2004-2013 Microchip Technology Inc.
MCP1650/51/52/53
8.0
REVISION HISTORY
Revision B (January 2013)
Added a note to each package outline drawing.
2004-2013 Microchip Technology Inc.
DS21876B-page 25
MCP1650/51/52/53
NOTES:
DS21876B-page 26
2004-2013 Microchip Technology Inc.
MCP1650/51/52/53
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
X
X
XX
Device
UVLO
Options
Temperature
Range
Package
Device
MCP1650:
MCP1651:
MCP1652:
MCP1653:
750 kHz Boost Controller
750 kHz Boost Controller
750 kHz Boost Controller
750 kHz Boost Controller
Examples:
a)
b)
MCP1650R-E/MS:
MCP1650RT-E/MS:
c)
d)
MCP1650S-E/MS:
MCP1650ST-E/MS:
a)
b)
MCP1651R-E/MS:
MCP1651RT-E/MS:
c)
d)
MCP1651S-E/MS:
MCP1651ST-E/MS:
UVLO Options
R
S
= 2.0V
= 2.55V
Temperature Range
E
= -40C to +125C
a)
b)
MCP1652R-E/MS:
MCP1652RT-E/MS:
Package
MS
UN
= Plastic Micro Small Outline (MSOP), 8-lead
= Plastic Micro Small Outline (MSOP), 10-lead
c)
d)
MCP1652S-E/MS:
MCP1652ST-E/MS:
a)
b)
MCP1653R-E/UN:
MCP1653RT-E/UN:
c)
d)
MCP1653S-E/UN:
MCP1653ST-E/UN:
2.0V Option
2.0V Option,
Tape and Reel
2.55V Option
2.55V Option,
Tape and Reel
2.0V Option
2.0V Option,
Tape and Reel
2.55V Option
2.55V Option,
Tape and Reel
2.0V Option
2.0V Option,
Tape and Reel
2.55V Option
2.55V Option,
Tape and Reel
2.0V Option
2.0V Option,
Tape and Reel
2.55V Option
2.55V Option,
Tape and Reel
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and
recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
2.
Your local Microchip sales office
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
2004-2013 Microchip Technology Inc.
DS21876B-page 27
MCP1650/51/52/53
NOTES:
DS21876B-page 28
2004-2013 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. & KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2004-2013, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 9781620769034
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
2004-2013 Microchip Technology Inc.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS21876B-page 29
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
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Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Web Address:
www.microchip.com
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Tel: 43-7242-2244-39
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Tel: 86-755-8864-2200
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Tel: 886-7-213-7828
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Taiwan - Taipei
Tel: 886-2-2508-8600
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Tel: 86-592-2388138
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Tel: 86-756-3210040
Fax: 86-756-3210049
DS21876B-page 30
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
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11/29/12
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