MCP1663
High-Voltage Integrated Switch PWM Boost Regulator with UVLO
Features
General Description
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The MCP1663 device is a compact, high-efficiency,
fixed-frequency, non-synchronous step-up DC-DC
converter which integrates a 36V, 400 mΩ NMOS
switch. It provides a space-efficient high-voltage
step-up power supply solution for applications powered
by either two-cell or three-cell alkaline, Ultimate
Lithium, NiCd, NiMH, one-cell Li-Ion or Li-Polymer
batteries.
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36V, 400 mΩ Integrated Switch
Up to 92% Efficiency
Output Voltage Range: up to 32V
1.8A Peak Input Current Limit:
- IOUT > 375 mA @ 5.0V VIN, 12V VOUT
- IOUT > 200 mA @ 3.3V VIN, 12V VOUT
- IOUT > 150 mA @ 4.2V VIN, 24V VOUT
Input Voltage Range: 2.4V to 5.5V
Undervoltage Lockout (UVLO):
- UVLO @ VIN Rising: 2.3V, typical
- UVLO @ VIN Falling: 1.85V, typical
No Load Input Current: 250 µA, typical
Sleep mode with 0.3 µA Typical Shutdown
Quiescent Current
PWM Operation with Skip Mode: 500 kHz
Feedback Voltage Reference: VFB = 1.227V
Cycle-by-Cycle Current Limiting
Internal Compensation
Inrush Current Limiting and Internal Soft Start
Output Overvoltage Protection (OVP) in the event
of:
- Feedback pin shorted to GND
- Disconnected feedback divider
Overtemperature Protection
Easily Configurable for SEPIC, Cuk or Flyback
Topologies
Available Packages:
- 5-Lead SOT-23
- 8-Lead 2x3 TDFN
Applications
• Two and Three-Cell Alkaline, Lithium Ultimate and
NiMH/NiCd Portable Products
• Single-Cell Li-Ion to 5V, 12V or 24V Converters
• LCD Bias Supply for Portable Applications
• Camera Phone Flash
• Portable Medical Equipment
• Hand-Held Instruments
The integrated switch is protected by the 1.8A
cycle-by-cycle inductor peak current limit operation.
There is an output overvoltage protection which turns
off switching in case the feedback resistors are
accidentally disconnected or the feedback pin is
short-circuited to GND.
Low-voltage technology allows the regulator to start-up
without high inrush current or output voltage overshoot
from a low-voltage input. The device features a UVLO
which avoids start-up and operation with low inputs or
discharged batteries for two cell-powered applications.
For standby applications (EN = GND), the device stops
switching, enters sleep mode and consumes 0.3 µA
(typical) of input current.
MCP1663 is easy to use and allows creating classic
boost, SEPIC or flyback DC-DC converters within a
small Printed Circuit Board (PCB) area. All
compensation and protection circuitry is integrated to
minimize the number of external components. Ceramic
input and output capacitors are used.
Package Types
MCP1663
SOT-23
SW 1
5 VIN
GND 2
VFB 3
4 EN
MCP1663
2x3 TDFN*
VFB 1
SGND 2
SW 3
NC 4
8 EN
EP
9
7 PGND
6 NC
5 VIN
* Includes Exposed Thermal Pad (EP); see Table 3-1.
2015 Microchip Technology Inc.
DS20005406A-page 1
MCP1663
Typical Applications
D
PMEG2010
L
4.7 µH
CIN
4.7 - 10 µF
VIN
3.6V to 4.5V
SW
RTOP
1.05 MΩ
VIN
+
MCP1663
VFB
BATTERY
1 X LI-ION
OR
3 X ALKALINE
EN
-
VOUT
12V, 250 mA
COUT
4.7 - 10 µF
RBOT
120 kΩ
GND
ON
OFF
D
MBRM140
L
10 µH
CIN
10 µF
VIN
3.6V to 4.5V
SW
VIN
+
RTOP
1.05 MΩ
MCP1663
VFB
BATTERY
1 X LI-ION
OR
3 X ALKALINE
EN
-
VOUT
24V, 100 mA
COUT
10 - 22 µF
RBOT
56 k Ω
GND
ON
OFF
450
400
VOUT = 12V
IOUT (mA)
350
300
250
VOUT = 24V
200
150
100
50
0
2.4 2.7
3
3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4
VIN (V)
Maximum Output Current vs. Input Voltage
DS20005406A-page 2
2015 Microchip Technology Inc.
MCP1663
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
VSW – GND .....................................................................+36V
EN, VIN – GND...............................................................+6.0V
VFB .................................................................................+1.3V
Power Dissipation ....................................... Internally Limited
Storage Temperature ....................................-65°C to +150°C
Ambient Temperature with Power Applied ....-40°C to +125°C
Operating Junction Temperature...................-40°C to +150°C
ESD Protection On All Pins:
HBM ................................................................. 4 kV
MM ..................................................................400V
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
DC AND AC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, all limits apply for typical values at ambient temperature
TA = +25°C, VIN = 3.3V, IOUT = 20 mA, VOUT = 12V, CIN = COUT = 10 µF, X7R ceramic, L = 4.7 µH.
Boldface specifications apply over the controlled TA range of -40°C to +125°C.
Parameters
Input Voltage Range
Undervoltage Lockout
(UVLO)
Output Voltage Adjust Range
Maximum Output Current
Sym.
Min.
Typ.
Max.
Units
Conditions
VIN
2.4
—
5.5
V
Note 1
UVLOSTART
—
2.3
—
V
VIN rising,
IOUT = 1 mA resistive load
UVLOSTOP
—
1.85
—
V
VIN falling,
IOUT = 1 mA resistive load
VOUT
—
—
32
V
IOUT
—
200
—
mA
3.3V VIN, 12V VOUT (Note 4)
375
—
mA
5.0V VIN, 12V VOUT (Note 4)
150
—
mA
4.2V VIN, 24V VOUT (Note 4)
1.227
1.264
V
Note 1
VFB
1.190
-3
—
3
%
Feedback Input Bias Current
IVFB
—
0.025
—
µA
No Load Input Current
IIN0
—
250
—
µA
Device switching, no load,
3.3V VIN, 12V VOUT (Note 2)
IQSHDN
—
300
—
nA
EN = GND,
feedback divider current not
included (Note 3)
Peak Switch Current Limit
ILmax
—
1.8
—
A
Note 4
NMOS Switch Leakage
INLK
—
0.4
—
µA
VIN = VSW = 5V; VOUT = 5.5V
VEN = VFB = GND
RDS(ON)
—
0.4
—
Ω
VIN = 5V, VOUT = 12V,
IOUT = 100 mA (Note 4)
Feedback Voltage
VFB Accuracy
Shutdown Quiescent Current
NMOS Switch ON Resistance
Note 1:
2:
3:
4:
Minimum input voltage in the range of VIN (VIN ≤ 5.5V < VOUT) depends on the maximum duty cycle
(DCMAX) and on the output voltage (VOUT), according to the boost converter equation:
VINmin = VOUT x (1 – DCMAX). Recommended (VOUT - VIN) > 1V for boost applications.
IIN0 varies with input and output voltage (Figure 2-8). IIN0 is measured on the VIN pin when the device is
switching (EN = VIN), at no load, with RTOP = 120 k and RBOT = 1.05 MΩ.
IQSHDN is measured on the VIN pin when the device is not switching (EN = GND), at no load, with the
feedback resistors (RTOP + RBOT) disconnected from VOUT.
Determined by characterization, not production tested.
2015 Microchip Technology Inc.
DS20005406A-page 3
MCP1663
DC AND AC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits apply for typical values at ambient temperature
TA = +25°C, VIN = 3.3V, IOUT = 20 mA, VOUT = 12V, CIN = COUT = 10 µF, X7R ceramic, L = 4.7 µH.
Boldface specifications apply over the controlled TA range of -40°C to +125°C.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Line Regulation
|(VFB/VFB)/
VIN|
—
0.05
0.5
%/V
VIN = 3V to 5V,
IOUT = 20 mA, VOUT = 12.0V
Load Regulation
|VFB/VFB|
—
0.5
1.5
%
IOUT = 20 mA to 125 mA,
VIN = 3.3V, VOUT = 12.0V
Maximum Duty Cycle
DCMAX
88
90
—
%
Note 4
Switching Frequency
fSW
425
500
575
kHz
±15%
EN Input Logic High
VIH
85
—
—
% of VIN IOUT = 1 mA
% of VIN IOUT = 1 mA
VIL
—
—
7.5
IENLK
—
0.025
—
µA
VEN = 5V
Soft-Start Time
tSS
—
3
—
ms
TA, EN Low-to-High,
90% of VOUT
Thermal Shutdown
Die Temperature
TSD
—
150
—
°C
TSDHYS
—
15
—
°C
EN Input Logic Low
EN Input Leakage Current
Die Temperature Hysteresis
Note 1:
2:
3:
4:
Minimum input voltage in the range of VIN (VIN ≤ 5.5V < VOUT) depends on the maximum duty cycle
(DCMAX) and on the output voltage (VOUT), according to the boost converter equation:
VINmin = VOUT x (1 – DCMAX). Recommended (VOUT - VIN) > 1V for boost applications.
IIN0 varies with input and output voltage (Figure 2-8). IIN0 is measured on the VIN pin when the device is
switching (EN = VIN), at no load, with RTOP = 120 k and RBOT = 1.05 MΩ.
IQSHDN is measured on the VIN pin when the device is not switching (EN = GND), at no load, with the
feedback resistors (RTOP + RBOT) disconnected from VOUT.
Determined by characterization, not production tested.
TEMPERATURE SPECIFICATIONS
Electrical Specifications: Unless otherwise specified, all limits apply for typical values at ambient temperature
TA = +25°C, VIN = 3.3V, IOUT = 20 mA, VOUT = 12V, CIN = COUT = 10 µF, X7R ceramic, L = 4.7 µH and 5-lead
SOT-23 package.
Boldface specifications apply over the controlled TA range of -40°C to +125°C.
Parameters
Sym.
Min.
Typ.
Max.
Units
Operating Junction Temperature
Range
TJ
-40
—
+125
°C
Storage Temperature Range
TA
-65
—
+150
°C
Maximum Junction Temperature
TJ
—
—
+150
°C
Thermal Resistance, 5LD-SOT-23
JA
—
201.0
—
°C/W
Thermal Resistance, 8LD-2x3 TDFN
JA
—
52.5
—
°C/W
Conditions
Temperature Ranges
Steady State
Transient
Package Thermal Resistances
DS20005406A-page 4
2015 Microchip Technology Inc.
MCP1663
2.0
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Note: Unless otherwise indicated, VIN = 3.3V, IOUT = 20 mA, VOUT = 12V, CIN = COUT = 10 µF, X7R ceramic,
L = 4.7 µH, RTOP = 120 kΩ and RBOT = 1.05 MΩ, TA = 25°C.
2.3
100
VIN = 5.5V
VOUT = 9.0V
90
2.2
2.1
2
1.9
80
Efficiency (%)
UVLO Thresholds (V)
UVLO Start
UVLO Stop
70
VIN = 2.3V
VIN = 4.0V
60
50
40
1.8
30
1.7
20
-40 -25 -10
5
20 35 50 65 80 95 110 125
0.1
1
10
100
1000
IOUT (mA)
Ambient Temperature (°C)
FIGURE 2-4:
IOUT.
FIGURE 2-1:
Undervoltage Lockout
(UVLO) vs. Ambient Temperature.
1.230
9.0V VOUT Efficiency vs.
100
90
1.225
Efficiency (%)
Feedback Voltage (V)
VIN = 3.0V
1.220
1.215
VIN = 5.5V
VOUT = 12.0V
80
VIN = 2.3V
70
VIN = 4.0V
VIN = 3.0V
60
50
40
30
1.210
-40 -25 -10 5
20
20 35 50 65 80 95 110 125
0.1
1
Ambient Temperature (°C)
FIGURE 2-2:
VFB Voltage vs. Ambient
Temperature and VIN.
IOUT (mA)
600
VOUT = 12V
L = 4.7 µH
500
400
VOUT = 24V
L = 10 µH
300
200
100
0
2.3
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
Efficiency (%)
VOUT = 9.0V
L = 4.7 µH
700
100
90
80
70
60
50
40
30
20
10
0
2015 Microchip Technology Inc.
1000
VOUT = 24V
L = 10 µH
VIN = 5.5V
VIN = 3.0V V = 4.0V
IN
0.1
VIN (V)
FIGURE 2-3:
Maximum Output Current
vs. VIN (VOUT in Regulation with Max. 5% Drop).
100
12.0V VOUT Efficiency vs.
FIGURE 2-5:
IOUT.
800
10
IOUT (mA)
1
10
100
1000
IOUT (mA)
FIGURE 2-6:
IOUT.
24.0V VOUT Efficiency vs.
DS20005406A-page 5
MCP1663
Note: Unless otherwise indicated, VIN = 3.3V, IOUT = 20 mA, VOUT = 12V, CIN = COUT = 10 µF, X7R ceramic,
L = 4.7 µH, TA = 25°C.
1600
VOUT = 12V
1400
1.8
IQ PWM Mode (µA)
Inductor Peak Current (A)
2
VOUT = 12V
1.6
VOUT = 24V
1.4
1.2
VIN = 2.3V
1200
1000
800
VIN = 3.0V
600
400
200
1
2.4 2.7
3
VIN = 5.5V
0
3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4
-40 -25 -10
Input Voltage (V)
FIGURE 2-7:
vs. Input Voltage.
Inductor Peak Current Limit
FIGURE 2-10:
No Load Input Current, IIN0
vs. Ambient Temperature.
300
575
Switching Frequency (kHz)
270
IQ PWM Mode (µA)
5 20 35 50 65 80 95 110 125
Ambient Temperature (°C)
240
210
180
150
120
90
60
30
VIN = 3.5V
550
IOUT = 150 mA
525
500
475
450
425
0
1.4 1.8 2.2 2.6 3 3.4 3.8 4.2 4.6
Input Voltage (V)
5
-40 -25 -10
5.4
5
20 35 50 65 80 95 110 125
Ambient Temperature (°C)
FIGURE 2-8:
No Load Input Current, IIN0
vs. VIN (EN = VIN).
fSW vs. Ambient
FIGURE 2-11:
Temperature.
5.5
0.8
Note: Without FB Resistor Divider Current
5.0
0.6
4.5
VOUT = 32.0V
0.5
0.4
VIN (V)
IQ Shutdown Mode (µA)
0.7
VOUT = 12.0V
0.3
4.0
3.5
3.0
0.2
2.5
VOUT = 6.0V
0.1
2.0
0
1.8
2.2
2.6
3
3.4 3.8 4.2
Input Voltage (V)
4.6
5
FIGURE 2-9:
Shutdown Quiescent
Current, IQSHDN vs. VIN (EN = GND).
DS20005406A-page 6
5.4
0
1
2
3
4
5
6
7
8
9
10
IOUT (mA)
FIGURE 2-12:
Threshold.
PWM Pulse Skipping Mode
2015 Microchip Technology Inc.
MCP1663
Note: Unless otherwise indicated, VIN = 3.3V, IOUT = 20 mA, VOUT = 12V, CIN = COUT = 10 µF, X7R ceramic,
L = 4.7 µH, TA = 25°C.
VOUT
50 mV/div, AC Coupled
20 MHz BW
Enable Thresholds (% of VIN)
100
IOUT = 1 mA
90
EN VIH
IOUT = 100 mA
80
70
60
VSW
5 V/div
50
40
30
20
EN VIL
10
0
2.3
2.6
2.9
3.2 3.5 3.8 4.1
Input Voltage (V)
FIGURE 2-13:
Voltage.
4.4
4.7
5
IL
500 mA/div
1 µs/div
Enable Threshold vs. Input
FIGURE 2-16:
Waveforms.
High-Load PWM Mode
IOUT = 15 mA
Switch RDS(ON) (Ohms)
0.8
IOUT = 100 mA
0.7
VIN = 5V
0.6
VOUT
5 V/div
0.5
0.4
0.3
VIN
5 V/div
IL
500 mA/div
0.2
0.1
VEN
5 V/div
0
2.4
2.8
FIGURE 2-14:
vs. VIN.
3.2
3.6
4
Input Voltage (V)
4.4
4.8
5.2
800 µs/div
N-Channel Switch RDSON
VOUT 20 mV/div, AC Coupled, 20 MHz BW
FIGURE 2-17:
12.0V Start-Up by Enable.
IOUT = 15 mA
IOUT = 5 mA
VOUT
5 V/div
VSW 5 V/div
VIN
2 V/div
VSW
5 V/div
IL
100 mA/div
400 µs/div
2 µs/div
FIGURE 2-15:
12.0V VOUT Light Load
PWM Mode Waveforms.
2015 Microchip Technology Inc.
FIGURE 2-18:
(VIN = VENABLE).
12.0V Start-Up
DS20005406A-page 7
MCP1663
Note: Unless otherwise indicated, VIN = 3.3V, IOUT = 20 mA, VOUT = 12V, CIN = COUT = 10 µF, X7R ceramic,
L = 4.7 µH, TA = 25°C.
VOUT
200 mV/div, AC Coupled
Step from 20 mA to 50 mA
IOUT
20 mA/div
2 ms/div
FIGURE 2-19:
Waveforms.
12.0V VOUT Load Transient
IOUT = 60 mA
Step from 3.3V to 5.0V
VIN
3 V/div
VOUT
100 mV/div, AC Coupled
800 us/div
FIGURE 2-20:
Waveforms.
DS20005406A-page 8
12.0V VOUT Line Transient
2015 Microchip Technology Inc.
MCP1663
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
MCP1663
2x3 TDFN
3.1
PIN FUNCTION TABLE
MCP1663
SOT-23
Symbol
Description
1
3
VFB
2
—
SGND
Feedback Voltage Pin
3
1
SW
Switch Node, Boost Inductor Input Pin
4, 6
—
NC
Not Connected
Input Voltage Pin
Signal Ground Pin (TDFN only)
5
5
VIN
7
—
PGND
8
4
EN
Enable Control Input Pin
9
—
EP
Exposed Thermal Pad (EP); must be connected to Ground.
(TDFN only)
—
2
GND
Power Ground Pin (TDFN only)
Ground Pin (SOT-23 only)
Feedback Voltage Pin (VFB)
The VFB pin is used to provide output voltage regulation
by using a resistor divider. The VFB voltage is 1.227V
typical.
3.2
Signal Ground Pin (SGND)
The signal ground pin is used as a return for the
integrated reference voltage and error amplifier. The
signal ground and power ground must be connected
externally in one point.
3.3
Switch Node Pin (SW)
Connect the inductor from the input voltage to the SW
pin. The SW pin carries inductor current, which is 1.8A
peak typically. The integrated N-Channel switch drain
is internally connected to the SW node.
3.4
Not Connected (NC)
3.7
Enable Pin (EN)
The EN pin is a logic-level input used to enable or
disable device switching and lower quiescent current
while disabled. A logic high (>85% of VIN) will enable
the regulator output. A logic low (
4
!/
;
:
=
4
!
