MCP1700
Low Quiescent Current LDO
Features:
General Description:
•
•
•
•
The MCP1700 is a family of CMOS low dropout (LDO)
voltage regulators that can deliver up to 250 mA of
current while consuming only 1.6 µA of quiescent
current (typical). The input operating range is specified
from 2.3V to 6.0V, making it an ideal choice for two and
three primary cell battery-powered applications, as well
as single cell Li-Ion-powered applications.
•
•
•
•
•
•
•
1.6 µA Typical Quiescent Current
Input Operating Voltage Range: 2.3V to 6.0V
Output Voltage Range: 1.2V to 5.0V
250 mA Output Current for Output
Voltages 2.5V
200 mA Output Current for Output
Voltages < 2.5V
Low Dropout (LDO) Voltage
- 178 mV Typical @ 250 mA for VOUT = 2.8V
0.4% Typical Output Voltage Tolerance
Standard Output Voltage Options:
- 1.2V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 5.0V
Stable with 1.0 µF Ceramic Output Capacitor
Short Circuit Protection
Overtemperature Protection
Applications:
•
•
•
•
•
•
•
•
•
•
Battery-Powered Devices
Battery-Powered Alarm Circuits
Smoke Detectors
CO2 Detectors
Pagers and Cellular Phones
Smart Battery Packs
Low Quiescent Current Voltage Reference
PDAs
Digital Cameras
Microcontroller Power
Related Literature:
• AN765, “Using Microchip’s Micropower LDOs”
(DS00765), Microchip Technology Inc., 2002
• AN766, “Pin-Compatible CMOS Upgrades to
BiPolar LDOs” (DS00766),
Microchip Technology Inc., 2002
• AN792, “A Method to Determine How Much
Power a SOT23 Can Dissipate in an Application”
(DS00792), Microchip Technology Inc., 2001
The MCP1700 is capable of delivering 250 mA with
only 178 mV of input to output voltage differential
(VOUT = 2.8V). The output voltage tolerance of the
MCP1700 is typically ±0.4% at +25°C and ±3%
maximum over the operating junction temperature
range of -40°C to +125°C.
Output voltages available for the MCP1700 range from
1.2V to 5.0V. The LDO output is stable when using only
1 µF output capacitance. Ceramic, tantalum or
aluminum electrolytic capacitors can all be used for
input and output. Overcurrent limit and overtemperature
shutdown provide a robust solution for any application.
Package options include SOT-23, SOT-89, TO-92 and
2x2 DFN-6.
Package Types
3-Pin SOT-23
3-Pin SOT-89
VIN
VIN
3
MCP1700
MCP1700
1
2
GND VOUT
1
2
GND VIN VOUT
3-Pin TO-92
2x2 DFN-6*
VIN 1
MCP1700
1 2 3
3
NC 2
GND 3
6 VOUT
EP
7
5 NC
4 NC
GND VIN VOUT
* Includes Exposed Thermal Pad (EP); see Table 3-1.
2005-2016 Microchip Technology Inc.
DS20001826D-page 1
MCP1700
Functional Block Diagrams
MCP1700
VOUT
VIN
Error Amplifier
+VIN
Voltage
Reference
+
Overcurrent
Overtemperature
GND
Typical Application Circuits
MCP1700
GND
VOUT
1.8V
IOUT
150 mA
DS20001826D-page 2
VIN
VOUT
VIN
(2.3V to 3.2V)
CIN
1 µF Ceramic
COUT
1 µF Ceramic
2005-2016 Microchip Technology Inc.
MCP1700
1.0
ELECTRICAL
CHARACTERISTICS
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only, and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Absolute Maximum Ratings †
VDD ............................................................................................+6.5V
All inputs and outputs w.r.t. ......... (VSS - 0.3V) to (VIN + 0.3V)
Peak Output Current .................................... Internally Limited
Storage Temperature ....................................-65°C to +150°C
Maximum Junction Temperature ................................... 150°C
Operating Junction Temperature...................-40°C to +125°C
ESD protection on all pins (HBM;MM) 4 kV; 400V
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise specified, all limits are established for VIN = VR + 1V, ILOAD = 100 µA,
COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
Boldface type applies for junction temperatures, TJ (Note 6) of -40°C to +125°C.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input/Output Characteristics
Input Operating
Voltage
VIN
2.3
—
6.0
V
Note 1
Input Quiescent
Current
Iq
—
1.6
4
µA
IL = 0 mA, VIN = VR + 1V
Maximum Output
Current
IOUT_mA
250
200
—
—
—
—
mA
For VR 2.5V
For VR 2.5V
Output Short
Circuit Current
IOUT_SC
—
408
—
mA
VIN = VR + 1V, VOUT = GND
Current (peak current) measured 10 ms
after short is applied.
Output Voltage
Regulation
VOUT
VR - 2.0%
VR - 3.0%
VR ± 0.4%
VR + 2.0%
VR + 3.0%
V
Note 2
TCVOUT
—
50
—
ppm/°C
Note 3
Line Regulation
VOUT/
(VOUTXVIN)
-1.0
±0.75
+1.0
%/V
Load Regulation
VOUT/VOUT
-1.5
±1.0
+1.5
%
Dropout Voltage
VR 2.5V
VIN - VOUT
—
178
350
mV
IL = 250 mA, (Note 1, Note 5)
Dropout Voltage
VR 2.5V
VIN - VOUT
—
150
350
mV
IL = 200 mA, (Note 1, Note 5)
Output Rise Time
TR
—
500
—
µs
10% VR to 90% VR VIN = 0V to 6V,
RL = 50 resistive
VOUT Temperature
Coefficient
Note 1:
2:
3:
4:
5:
6:
7:
(VR + 1)V VIN 6V
IL = 0.1 mA to 250 mA for VR 2.5V
IL = 0.1 mA to 200 mA for VR 2.5V
Note 4
The minimum VIN must meet two conditions: VIN 2.3V and VIN VR + 3.0% VDROPOUT.
VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The
input voltage VIN = VR + 1.0V; IOUT = 100 µA.
TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * Temperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with a VR + 1V differential applied.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
2005-2016 Microchip Technology Inc.
DS20001826D-page 3
MCP1700
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise specified, all limits are established for VIN = VR + 1V, ILOAD = 100 µA,
COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
Boldface type applies for junction temperatures, TJ (Note 6) of -40°C to +125°C.
Parameters
Output Noise
Power Supply
Ripple Rejection
Ratio
Thermal
Shutdown
Protection
Note 1:
2:
3:
4:
5:
6:
7:
Sym.
Min.
Typ.
Max.
Units
Conditions
IL = 100 mA, f = 1 kHz, COUT = 1 µF
eN
—
3
—
µV/(Hz)1/2
PSRR
—
44
—
dB
f = 100 Hz, COUT = 1 µF, IL = 50 mA,
VINAC = 100 mV pk-pk, CIN = 0 µF,
VR = 1.2V
TSD
—
140
—
°C
VIN = VR + 1V, IL = 100 µA
The minimum VIN must meet two conditions: VIN 2.3V and VIN VR + 3.0% VDROPOUT.
VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The
input voltage VIN = VR + 1.0V; IOUT = 100 µA.
TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * Temperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with a VR + 1V differential applied.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise specified, all limits are established for VIN = VR + 1V, ILOAD = 100 µA,
COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
Boldface type applies for junction temperatures, TJ (Note 1) of -40°C to +125°C.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Temperature Ranges
Specified Temperature Range
TA
-40
+125
°C
Operating Temperature Range
TJ
-40
+125
°C
Storage Temperature Range
TA
-65
+150
°C
JA
—
—
°C/W
JC
—
19
—
°C/W
JA
—
336
—
°C/W
JC
—
110
—
°C/W
Thermal Package Resistance
Thermal Resistance, 2x2 DFN
Thermal Resistance, SOT-23
Thermal Resistance, SOT-89
Thermal Resistance, TO-92
Note 1:
91
JA
—
180
—
°C/W
JC
—
52
—
°C/W
JA
—
160
—
°C/W
JC
—
66.3
—
°C/W
EIA/JEDEC® JESD51-7
FR-4 0.063 4-Layer Board
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
DS20001826D-page 4
2005-2016 Microchip Technology Inc.
MCP1700
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VR + 1V.
Note: Junction Temperature (TJ) is approximated by soaking the device under test to an ambient temperature equal to the desired junction
temperature. The test time is small enough such that the rise in Junction temperature over the Ambient temperature is not significant.
1.208
VR = 1.2V
IOUT = 0 µA
2.8
1.206
TJ = +125°C
2.6
2.4
TJ = - 40°C
2.2
2.0
1.8
TJ = +25°C
1.6
Ou
utput Voltage (V)
Quies
scent Current (µA)
3.0
1.202
1.200
TJ = +25°C
1.198
1.196
TJ = - 40°C
1.192
1.2
1.190
1.0
2.0
2.5
3.0
FIGURE 2-1:
Input Voltage.
3.5
4.0
4.5
Input Voltage (V)
5.0
5.5
2.0
6.0
Input Quiescent Current vs.
3.0
3.5 4.0 4.5
Input Voltage (V)
5.0
5.5
6.0
1.800
VR = 2.8V
45
2.5
FIGURE 2-4:
Output Voltage vs. Input
Voltage (VR = 1.2V).
50
VR = 1.8V
IOUT = 0.1 mA
TJ = +125°C
1.795
40
TJ = +25°C
35
30
TJ = - 40°C
25
20
15
10
Outp
put Voltage (V)
Grou
und Current (µA)
1.204
1.194
1.4
VR = 1.2V
IOUT = 0.1 mA
TJ = +125°C
1.790
TJ = - 40°C
TJ = +125°C
1.785
1 780
1.780
TJ = +25°C
1.775
5
1.770
0
0
25
50
FIGURE 2-2:
Current.
Ground Current vs. Load
3.0
3.5 4.0 4.5
Input Voltage (V)
5.0
5.5
6.0
FIGURE 2-5:
Output Voltage vs. Input
Voltage (VR = 1.8V).
VR = 5.0V
VR = 1.2V
VR = 2.8V
1.50
VR = 2.8V
IOUT = 0.1 mA
2.798
Ou
utput Voltage (V)
Quiesc
cent Current (µA)
VIN = VR + 1V
IOUT = 0 µA
2.00
1.75
2.5
2.800
2.50
2.25
2.0
75 100 125 150 175 200 225 250
Load Current (mA)
TJ = +25°C
2.796
2.794
2.792
2.790
TJ = - 40°C
2.788
2.786
2.784
TJ = +125°C
2.782
2.780
1.25
2.778
-40 -25 -10
5 20 35 50 65 80 95 110 125
Junction Temperature (°C)
FIGURE 2-3:
Quiescent Current vs.
Junction Temperature.
2005-2016 Microchip Technology Inc.
3.3
3.6
3.9
4.2
4.5
4.8
5.1
5.4
5.7
6.0
Input Voltage (V)
FIGURE 2-6:
Output Voltage vs. Input
Voltage (VR = 2.8V).
DS20001826D-page 5
MCP1700
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VR + 1V.
5.000
VR = 5.0V
IOUT = 0.1 mA
Ou
utput Voltage (V)
Output Voltage (V)
4.995
TJ = +25°C
4.990
TJ = - 40°C
4.985
4.980
4.975
4.970
4.965
TJ = +125°C
4.960
4.955
5.0
5.2
5.4
5.6
Input Voltage (V)
5.8
6.0
FIGURE 2-7:
Output Voltage vs. Input
Voltage (VR = 5.0V).
VR = 2.8V
VIN = VR + 1V
TJ = - 40°C
TJ = +125°C
0
50
100
150
Load Current (mA)
200
250
FIGURE 2-10:
Output Voltage vs. Load
Current (VR = 2.8V).
1.21
5.000
VR = 1.2V
VIN = VR + 1V
TJ = - 40°C
1.20
1.19
TJ = +25°C
1.18
1.17
TJ = +125
+125°C
C
TJ = +25°C
4.995
Output Voltage (V)
Output Voltage (V)
TJ = +25°C
2.798
2.796
2.794
2.792
2.790
2.788
2.786
2 784
2.784
2.782
2.780
2.778
1.16
4.990
4.985
TJ = - 40°C
4.980
VR = 5.0V
VIN = VR + 1V
4.975
4 970
4.970
4.965
TJ = +125°C
4.960
1.15
4.955
0
25
50
75
100
125
150
175
200
0
50
Load Current (mA)
FIGURE 2-8:
Output Voltage vs. Load
Current (VR = 1.2V).
200
250
FIGURE 2-11:
Output Voltage vs. Load
Current (VR = 5.0V).
0.25
1.792
VR = 2.8V
1.790
Drop
pout Votage (V)
Ou
utput Voltage (V)
100
150
Load Current (mA)
TJ = +25°C
1.788
TJ = - 40°C
1.786
TJ = +125°C
1.784
1.782
VR = 1.8V
VIN = VR + 1V
1.780
0.20
TJ = +125°C
TJ = +25°C
0.15
0.10
TJ = - 40°C
0.05
0.00
1.778
0
25
50
75 100 125 150
Load Current (mA)
175
200
FIGURE 2-9:
Output Voltage vs. Load
Current (VR = 1.8V).
DS20001826D-page 6
0
25
50
75 100 125 150 175 200 225 250
Load Current (mA)
FIGURE 2-12:
Dropout Voltage vs. Load
Current (VR = 2.8V).
2005-2016 Microchip Technology Inc.
MCP1700
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VR + 1V.
0.16
0.12
TJ = +125°C
0.10
Noise (µV/√Hz)
N
Dropo
out Voltage (V)
10.00
VR = 5.0V
0.14
TJ = +25°C
0.08
0.06
TJ = - 40°C
0.04
1.00
VIN = 3.8V
VR = 2.8V
IOUT = 50 mA
VIN = 2.5V
VIN = 2.8V
VR = 1.2V
VR = 1.8V
IOUT = 50 mA IOUT = 50 mA
0 10
0.10
0.02
0.00
0
25
50
75 100 125 150 175 200 225 250
Load Current (mA)
FIGURE 2-13:
Dropout Voltage vs. Load
Current (VR = 5.0V).
0.01
0.01
FIGURE 2-16:
1
10
Frequency (kHz)
100
1000
Noise vs. Frequency.
VIN = 2.2V
+20
+10
CIN = 1µF Ceramic
COUT = 1µF Ceramic
0
PSRR (dB/decade)
0.1
-10
-20
VR = 1.2V
-30
-40
-50
I = 100 mA
Load
Step
-60
-70
0.01
0.10
1.00
10.0
Frequency (KHz)
100
1000
FIGURE 2-14:
Power Supply Ripple
Rejection vs. Frequency (VR = 1.2V).
FIGURE 2-17:
(VR = 1.2V).
+20
Dynamic Load Step
VIN = 2.8V
+10
CIN = 1µF Ceramic
COUT = 1µF Ceramic
PSRR (dB/Decade)
0
-10
VR = 1.8V
-20
-30
-40
I = 100 mA
Load
Step
-50
-60
0.01
0.01
10.00
1
Frequency (KHz)
100
FIGURE 2-15:
Power Supply Ripple
Rejection vs. Frequency (VR = 2.8V).
2005-2016 Microchip Technology Inc.
1000
FIGURE 2-18:
(VR = 1.8V).
Dynamic Load Step
DS20001826D-page 7
MCP1700
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VR + 1V.
VIN = 6V
CIN = 1 µF Ceramic
COUT = 22 µF (1 ESR)
VIN = 3.8V
CIN = 1µF Ceramic
COUT = 1µF Ceramic
VR = 5V
VR = 2.8V
I = 100 mA
Load
Step
IOUT= 200 mA
Load Step
FIGURE 2-19:
(VR = 2.8V).
Dynamic Load Step
VIN = 2.8V
VR = 1.8V
CIN = 1 µF Ceramic
COUT = 22 µF (1 ESR)
FIGURE 2-22:
(VR = 5.0V).
VIN = 3.8V to
4.8V
Dynamic Load Step
COUT = 1 µF Ceramic
VR = 2.8V
IOUT= 200 mA
Load Step
IOUT
100 mA
FIGURE 2-20:
(VR = 1.8V).
Dynamic Load Step
VIN = 3.8V
CIN = 1 µF Ceramic
FIGURE 2-23:
(VR = 2.8V).
VIN = 0V to
2.2V
COUT = 22 µF (1 ESR)
Dynamic Line Step
COUT = 1 µF Ceramic
RLOAD = 25
VR = 2.8V
VR = 1.2V
IOUT= 200 mA
Load Step
FIGURE 2-21:
(VR = 2.8V).
DS20001826D-page 8
Dynamic Load Step
FIGURE 2-24:
(VR = 1.2V).
Start-up from VIN
2005-2016 Microchip Technology Inc.
MCP1700
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VR + 1V.
COUT = 1 µF Ceramic
RLOAD = 25
VR = 1.8V
0.0
Loa
ad Regulation (%)
VIN = 0V to
2.8V
VIN = 5.0V
-0.1
VR = 2.8V
IOUT = 0 to 250 mA
VIN = 4.3V
-0.2
-0.3
-0.4
VIN = 3.3V
-0.5
-0.6
-0.7
-40 -25 -10
FIGURE 2-25:
(VR = 1.8V).
Start-up from VIN
VIN = 0V to
3.8V
FIGURE 2-28:
Load Regulation vs.
Junction Temperature (VR = 2.8V).
COUT = 1 µF Ceramic
RLOAD = 25
0.10
Load
d Regulation (%)
VR = 2.8V
5 20 35 50 65 80 95 110 125
Junction Temperature (°C)
VR = 5.0V
IOUT = 0 to 250 mA
0.05
VIN = 6.0V
0.00
-0.05
VIN = 5
5.5V
5
-0.10
0 10
-0.15
-0.20
-40
-25
-10
5
20
35
50
65
80
95
110 125
Junction Temperature (°C)
FIGURE 2-26:
(VR = 2.8V).
Start-up from VIN
FIGURE 2-29:
Load Regulation vs.
Junction Temperature (VR = 5.0V).
0.2
VR = 1.8V
IOUT = 0 to 200 mA
VIN = 5.0V
0.1
VIN = 3.5V
0.0
-0.1
02
-0.2
VIN = 2.2V
-0.3
0.10
Line Regulation (%/V)
Loa
ad Regulation (%)
0.3
0.05
0.00
VR = 2.8V
-0.05
-0.10
VR = 1.8V
-0.15
-0.20
VR = 1.2V
-0.25
-0.4
-40 -25 -10
5 20 35 50 65 80 95 110 125
Junction Temperature (°C)
FIGURE 2-27:
Load Regulation vs.
Junction Temperature (VR = 1.8V).
2005-2016 Microchip Technology Inc.
-0.30
-40 -25 -10
5 20 35 50 65 80 95 110 125
Junction Temperature (°C)
FIGURE 2-30:
Line Regulation vs.
Temperature (VR = 1.2V, 1.8V, 2.8V).
DS20001826D-page 9
MCP1700
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
Pin No.
SOT-23
Pin No.
SOT-89
Pin No.
TO-92
Pin No.
2x2 DFN-6
1
1
1
3
GND
Ground Terminal
2
3
3
6
VOUT
Regulated Voltage Output
3.1
Function
3
2
2
1
VIN
Unregulated Supply Voltage
—
—
—
2, 4, 5
NC
No Connect
—
—
—
7
EP
Exposed Thermal Pad
Ground Terminal (GND)
Regulator ground. Tie GND to the negative side of the
output and the negative side of the input capacitor.
Only the LDO bias current (1.6 µA typical) flows out of
this pin; there is no high current. The LDO output
regulation is referenced to this pin. Minimize voltage
drops between this pin and the negative side of the
load.
3.2
Name
Regulated Output Voltage (VOUT)
3.4
No Connect (NC)
No internal connection. The pins marked NC are true
“No Connect” pins.
3.5
Exposed Thermal Pad (EP)
There is an internal electrical connection between the
Exposed Thermal Pad (EP) and the GND pin; they
must be connected to the same potential on the Printed
Circuit Board (PCB).
Connect VOUT to the positive side of the load and the
positive terminal of the output capacitor. The positive
side of the output capacitor should be physically
located as close to the LDO VOUT pin as is practical.
The current flowing out of this pin is equal to the DC
load current.
3.3
Unregulated Input Voltage Pin
(VIN)
Connect VIN to the input unregulated source voltage.
As with all low dropout linear regulators, low source
impedance is necessary for the stable operation of the
LDO. The amount of capacitance required to ensure
low source impedance will depend on the proximity of
the input source capacitors or battery type. For most
applications, 1 µF of capacitance will ensure stable
operation of the LDO circuit. For applications that have
load currents below 100 mA, the input capacitance
requirement can be lowered. The type of capacitor
used can be ceramic, tantalum or aluminum
electrolytic. The low ESR characteristics of the ceramic
will yield better noise and PSRR performance at high
frequency.
DS20001826D-page 10
2005-2016 Microchip Technology Inc.
MCP1700
4.0
DETAILED DESCRIPTION
4.1
Output Regulation
4.3
A portion of the LDO output voltage is fed back to the
internal error amplifier and compared with the precision
internal bandgap reference. The error amplifier output
will adjust the amount of current that flows through the
P-Channel pass transistor, thus regulating the output
voltage to the desired value. Any changes in input
voltage or output current will cause the error amplifier
to respond and adjust the output voltage to the target
voltage (refer to Figure 4-1).
4.2
Overtemperature
The internal power dissipation within the LDO is a
function of input-to-output voltage differential and load
current. If the power dissipation within the LDO is
excessive, the internal junction temperature will rise
above the typical shutdown threshold of 140°C. At that
point, the LDO will shut down and begin to cool to the
typical turn-on junction temperature of 130°C. If the
power dissipation is low enough, the device will
continue to cool and operate normally. If the power
dissipation remains high, the thermal shutdown
protection circuitry will again turn off the LDO,
protecting it from catastrophic failure.
Overcurrent
The MCP1700 internal circuitry monitors the amount of
current flowing through the P-Channel pass transistor.
In the event of a short circuit or excessive output
current, the MCP1700 will turn off the P-Channel
device for a short period, after which the LDO will
attempt to restart. If the excessive current remains, the
cycle will repeat itself.
MCP1700
VOUT
VIN
Error Amplifier
+VIN
Voltage
Reference
+
Overcurrent
Overtemperature
GND
FIGURE 4-1:
Block Diagram.
2005-2016 Microchip Technology Inc.
DS20001826D-page 11
MCP1700
5.0
FUNCTIONAL DESCRIPTION
The MCP1700 CMOS low dropout linear regulator is
intended for applications that need the lowest current
consumption while maintaining output voltage
regulation. The operating continuous load of the
MCP1700 ranges from 0 mA to 250 mA (VR 2.5V).
The input operating voltage ranges from 2.3V to 6.0V,
making it capable of operating from two, three or four
alkaline cells or a single Li-Ion cell battery input.
5.1
Input
The input of the MCP1700 is connected to the source
of the P-Channel PMOS pass transistor. As with all
LDO circuits, a relatively low source impedance (10)
is needed to prevent the input impedance from causing
the LDO to become unstable. The size and type of the
required capacitor depend heavily on the input source
type (battery, power supply) and the output current
range of the application. For most applications (up to
100 mA), a 1 µF ceramic capacitor will be sufficient to
ensure circuit stability. Larger values can be used to
improve circuit AC performance.
5.2
Output
The maximum rated continuous output current for the
MCP1700 is 250 mA (VR 2.5V). For applications
where VR < 2.5V, the maximum output current is
200 mA.
A minimum output capacitance of 1.0 µF is required for
small signal stability in applications that have up to
250 mA output current capability. The capacitor type
can be ceramic, tantalum or aluminum electrolytic. The
ESR range on the output capacitor can range from 0
to 2.0.
5.3
Output Rise time
When powering up the internal reference output, the
typical output rise time of 500 µs is controlled to
prevent overshoot of the output voltage.
DS20001826D-page 12
2005-2016 Microchip Technology Inc.
MCP1700
6.0
APPLICATION CIRCUITS AND
ISSUES
6.1
Typical Application
The MCP1700 is most commonly used as a voltage
regulator. Its low quiescent current and low dropout
voltage make it ideal for many battery-powered
applications.
GND
VIN
COUT
1 µF Ceramic
FIGURE 6-1:
6.1.1
VIN
(2.3V to 3.2V)
VOUT
IOUT
150 mA
CIN
1 µF Ceramic
Typical Application Circuit.
APPLICATION INPUT CONDITIONS
Package Type = SOT-23
Input Voltage Range = 2.3V to 3.2V
VIN maximum = 3.2V
VOUT typical = 1.8V
IOUT = 150 mA maximum
6.2
Power Calculations
6.2.1
EQUATION 6-2:
T J MAX = P TOTAL R JA + T A MAX
MCP1700
VOUT
1.8V
The maximum continuous operating junction
temperature specified for the MCP1700 is +125°C. To
estimate the internal junction temperature of the
MCP1700, the total internal power dissipation is
multiplied by the thermal resistance from junction to
ambient (RJA). The thermal resistance from junction to
ambient for the SOT-23 pin package is estimated at
230°C/W.
POWER DISSIPATION
The internal power dissipation of the MCP1700 is a
function of input voltage, output voltage and output
current. The power dissipation resulting from the
quiescent current draw is so low it is insignificant
(1.6 µA x VIN). The following equation can be used to
calculate the internal power dissipation of the LDO.
EQUATION 6-1:
P LDO = V IN MAX – V OUT MIN I OUT MAX
PLDO = Internal power dissipation of the
LDO Pass device
VIN(MAX) = Maximum input voltage
VOUT(MIN) = Minimum output voltage of the
LDO
TJ(MAX) =
Maximum continuous junction
temperature
PTOTAL =
Total power dissipation of the device
RJA =
TA(MAX) =
Thermal resistance from junction to
ambient
Maximum ambient temperature
The maximum power dissipation capability for a
package can be calculated given the junction-toambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the maximum internal power
dissipation of the package.
EQUATION 6-3:
T J MAX – T A MAX
P D MAX = --------------------------------------------------R JA
PD(MAX) =
Maximum power dissipation of the
device
TJ(MAX) =
Maximum continuous junction
temperature
TA(MAX) =
Maximum ambient temperature
RJA =
Thermal resistance from junction to
ambient
EQUATION 6-4:
T J RISE = P D MAX R JA
TJ(RISE) = Rise in the device’s junction
temperature over the ambient
temperature
PTOTAL = Maximum power dissipation of the
device
RJA = Thermal resistance from junction to
ambient
2005-2016 Microchip Technology Inc.
DS20001826D-page 13
MCP1700
EQUATION 6-5:
T J = T J RISE + T A
TJ = Junction Temperature
TJ(RISE) = Rise in the device’s junction
temperature over the ambient
temperature
TA = Ambient temperature
6.3
Voltage Regulator
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
are calculated in the following example. The power
dissipation resulting from ground current is small
enough to be neglected.
6.3.1
POWER DISSIPATION EXAMPLE
Package
TJ(RISE) = PTOTAL x RJA
TJ(RISE) = 218.1 milli-Watts x 230.0°C/Watt
TJ(RISE) = 50.2°C
Junction Temperature Estimate
To estimate the internal junction temperature, the
calculated temperature rise is added to the ambient or
offset temperature. For this example, the worst-case
junction temperature is estimated below.
TJ = TJ(RISE) + TA(MAX)
TJ = 90.2°C
Maximum Package Power Dissipation at +40°C
Ambient Temperature
2x2 DFN-6 (91°C/Watt = RJA)
PD(MAX) = (125°C - 40°C) / 91°C/W
PD(MAX) = 934 milli-Watts
SOT-23 (230.0°C/Watt = RJA)
Package Type = SOT-23
PD(MAX) = (125°C - 40°C) / 230°C/W
Input Voltage
PD(MAX) = 369.6 milli-Watts
VIN = 2.3V to 3.2V
LDO Output Voltages and Currents
VOUT = 1.8V
IOUT = 150 mA
Maximum Ambient Temperature
TA(MAX) = +40°C
SOT-89 (52°C/Watt = RJA)
PD(MAX) = (125°C - 40°C) / 52°C/W
PD(MAX) = 1.635 Watts
TO-92 (131.9°C/Watt = RJA)
PD(MAX) = (125°C - 40°C) / 131.9°C/W
PD(MAX) = 644 milli-Watts
Internal Power Dissipation
Internal Power dissipation is the product of the LDO
output current times the voltage across the LDO
(VIN to VOUT).
PLDO(MAX) = (VIN(MAX) - VOUT(MIN)) x IOUT(MAX)
PLDO = (3.2V - (0.97 x 1.8V)) x 150 mA
PLDO = 218.1 milli-Watts
Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction to ambient for the application. The thermal
resistance from junction to ambient (RJA) is derived
from an EIA/JEDEC® standard for measuring thermal
resistance for small surface mount packages. The EIA/
JEDEC specification is JESD51-7, “High Effective
Thermal Conductivity Test Board for Leaded Surface
Mount Packages”. The standard describes the test
method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors, such as copper area and
thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT-23 Can Dissipate in an
Application” (DS00792), for more information regarding
this subject.
DS20001826D-page 14
2005-2016 Microchip Technology Inc.
MCP1700
6.4
Voltage Reference
The MCP1700 can be used not only as a regulator, but
also as a low quiescent current voltage reference. In
many microcontroller applications, the initial accuracy
of the reference can be calibrated using production test
equipment or by using a ratio measurement. When the
initial accuracy is calibrated, the thermal stability and
line regulation tolerance are the only errors introduced
by the MCP1700 LDO. The low cost, low quiescent
current and small ceramic output capacitor are all
advantages when using the MCP1700 as a voltage
reference.
Ratio Metric Reference
PIC®
Microcontroller
1 µA Bias
MCP1700
CIN
1 µF
VIN
VOUT
GND
COUT
1 µF
VREF
AD0
AD1
Bridge Sensor
FIGURE 6-2:
voltage reference.
6.5
Using the MCP1700 as a
Pulsed Load Applications
For some applications, there are pulsed load current
events that may exceed the specified 250 mA
maximum specification of the MCP1700. The internal
current limit of the MCP1700 will prevent high peak
load demands from causing non-recoverable damage.
The 250 mA rating is a maximum average continuous
rating. As long as the average current does not exceed
250 mA, pulsed higher load currents can be applied to
the MCP1700. The typical current limit for the
MCP1700 is 550 mA (TA + 25°C).
2005-2016 Microchip Technology Inc.
DS20001826D-page 15
MCP1700
7.0
PACKAGING INFORMATION
7.1
Package Marking Information
3-Pin SOT-23
Standard
Extended Temp
CKNN
3-Pin SOT-89
CUYYWW
Symbol
Voltage *
CK
CM
CP
CQ
CR
CS
CU
1.2
1.8
2.5
2.8
3.0
3.3
5.0
* Custom output voltages available upon request.
NNN
Contact your local Microchip sales office for more
information.
Example
3-Pin TO-92
1700
1202E
e3
TO^^
322256
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XXXXXX
XXXXXX
YWWNNN
6-Lead DFN (2x2x0.9 mm)
Legend: XX...X
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NNN
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*
Note:
DS20001826D-page 16
Example
Part Number
Code
MCP1700T-1202E/MAY
ABB
MCP1700T-1802E/MAY
ABC
MCP1700T-2502E/MAY
ABD
MCP1700T-2802E/MAY
ABF
MCP1700T-3002E/MAY
ABE
MCP1700T-3302E/MAY
AAZ
MCP1700T-5002E/MAY
ABA
ABB
256
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
2005-2016 Microchip Technology Inc.
MCP1700
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2005-2016 Microchip Technology Inc.
DS20001826D-page 17
MCP1700
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20001826D-page 18
2005-2016 Microchip Technology Inc.
MCP1700
3-Lead Plastic Small Outline Transistor (MB) - [SOT-89]
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