MCP1703AT-1802E/CB

MCP1703A 250 mA, 16V, Low Quiescent Current LDO Regulator Features: Description: • • • • • • • The MCP1703A is an improved version of the MCP1703 low dropout (LDO) voltage regulator that can deliver up to 250 mA of current while consuming only 2.0 µA of quiescent current (typical). The input operating range is specified from 2.7V to 16.0V, making it an ideal choice for two to six primary cell batterypowered applications, 9V alkaline and one or two-cell Li-Ion-powered applications. • • • • • • • Reduced Ground Current During Dropout Faster Startup Time 2.0 µA Typical Quiescent Current Input Operating Voltage Range: 2.7V to16.0V 250 mA Output Current for Output Voltages ≥ 2.5V 200 mA Output Current for Output Voltages < 2.5V Low Dropout Voltage, 625 mV Typical @ 250 mA for VR = 2.8V 0.4% Typical Output Voltage Tolerance Standard Output Voltage Options: - 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V Output Voltage Range: 1.2V to 5.5V in 0.1V Increments (50 mV increments available upon request) A/D Friendly Voltage Options: 2.05V, 3.07V, 4.1V Stable with 1.0 µF to 22 µF Ceramic Output Capacitance Short-Circuit Protection Overtemperature Protection Applications: • • • • • • • • • • • • Battery-Powered Devices Battery-Powered Alarm Circuits Smoke Detectors CO2 Detectors Pagers and Cellular Phones Smart Battery Packs Low Quiescent Current Voltage Reference PDAs Digital Cameras Microcontroller Power Solar-Powered Instruments Consumer Products The MCP1703A is capable of delivering 250 mA with only 625 mV (typical) of input to output voltage differential (VOUT = 2.8V). The output voltage tolerance of the MCP1703A is typically ±0.4% at +25°C and ±3% maximum over the operating junction temperature range of -40°C to +125°C. Line regulation is ±0.1% typical at +25°C. Output voltages available for the MCP1703A range from 1.2V to 5.5V. The LDO output is stable when using only 1 µF of output capacitance. Ceramic, tantalum or aluminum electrolytic capacitors can all be used for input and output. Overcurrent limit and overtemperature shutdown provide a robust solution for any application. Package options include the SOT-223-3, SOT-23A, 2x3 DFN-8 and SOT-89-3. Package Types 8 VIN SOT-23A VIN 7 NC 3 2x3 DFN* VOUT 1 NC 2 NC 3 GND 4 EP 9 6 NC 5 NC 1 2 GND VOUT SOT-223 SOT-89 VIN Related Literature: • AN765, “Using Microchip’s Micropower LDOs”, DS00765, Microchip Technology Inc., 2007 • AN766, “Pin-Compatible CMOS Upgrades to Bipolar LDOs”, DS00766, Microchip Technology Inc., 2003 • AN792, “A Method to Determine How Much Power a SOT23 Can Dissipate in an Application”, DS00792, Microchip Technology Inc., 2001  2012-2013 Microchip Technology Inc. 1 2 3 GND VIN VOUT 1 2 3 VIN GND VOUT * Includes Exposed Thermal Pad (EP); see Table 3-1. DS20005122B-page 1 MCP1703A Functional Block Diagrams MCP1703A VOUT VIN Error Amplifier +VIN Voltage Reference + Overcurrent Overtemperature GND Typical Application Circuits MCP1703A VOUT 3.3V VOUT VIN 9V Battery DS20005122B-page 2 + CIN 1 µF Ceramic VIN VIN COUT 1 µF Ceramic IOUT 50 mA GND  2012-2013 Microchip Technology Inc. MCP1703A 1.0 † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † VDD..................................................................................+18V All inputs and outputs w.r.t. .............(VSS-0.3V) to (VIN+0.3V) Peak Output Current ...................................................500 mA Storage temperature .....................................-65°C to +150°C Maximum Junction Temperature ................................. +150°C ESD protection on all pins (HBM; MM) ............. ≥ 4 kV; ≥ 400V DC CHARACTERISTICS Electrical Specifications: Unless otherwise specified, all limits are established for VIN = VOUT(MAX) + VDROPOUT(MAX), Note 1, ILOAD = 1 mA, COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C. Boldface type applies for junction temperatures, TJ (Note 7) of -40°C to +125°C. Parameters Symbol Min Typ Max Units Conditions VIN 2.7 — 16.0 V Note 1 Iq — 2.0 5 µA IL = 0 mA IOUT 250 — — mA For VR ≥ 2.5V 50 100 — mA For VR < 2.5V, VIN ≥ 2.7V 100 130 — mA For VR < 2.5V, VIN ≥ 2.95V 150 200 — mA For VR < 2.5V, VIN ≥ 3.2V 200 230 — mA For VR < 2.5V, VIN ≥ 3.45V IOUT_SC — 400 — mA VIN = VIN(MIN) (Note 1), VOUT = GND, Current (average current) measured 10 ms after short is applied. VOUT VR-3.0% VR±0.4% VR+3.0% V VR-2.0% VR±0.4% VR+2.0% V VR-1.0% VR±0.4% VR+1.0% V Input / Output Characteristics Input Operating Voltage Input Quiescent Current Maximum Output Current Output Short Circuit Current Output Voltage Regulation VOUT Temperature Coefficient Note 2 1% Custom TCVOUT — 65 — ppm/°C Line Regulation DVOUT/ (VOUTxΔVIN) -0.3 ±0.1 +0.3 %/V (VOUT(MAX) + VDROPOUT(MAX)) ≤ VIN ≤ 16V, Note 1 Load Regulation ΔVOUT/VOUT -2.5 ±1.0 +2.5 % IL = 1.0 mA to 250 mA for VR ≥ 2.5V IL = 1.0 mA to 200 mA for VR < 2.5V VIN = 3.65V, Note 4 Note 1: 2: 3: 4: 5: 6: 7: Note 3 The minimum VIN must meet two conditions: VIN ≥ 2.7V and VIN ≥ (VOUT(MAX) + VDROPOUT(MAX)). VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V or 5.0V. The input voltage VIN = VOUT(MAX) + VDROPOUT(MAX) or ViIN = 2.7V (whichever is greater); IOUT = 100 µA. TCVOUT = (VOUT-HIGH - VOUT-LOW) x 106/(VR x ΔTemperature), VOUT-HIGH = highest voltage measured over the temperature range. VOUT-LOW = lowest voltage measured over the temperature range. Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output voltage due to heating effects are determined using thermal regulation specification TCVOUT. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, qJA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained junction temperatures above 150°C can impact the device reliability. The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature over the ambient temperature is not significant.  2012-2013 Microchip Technology Inc. DS20005122B-page 3 MCP1703A DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise specified, all limits are established for VIN = VOUT(MAX) + VDROPOUT(MAX), Note 1, ILOAD = 1 mA, COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C. Boldface type applies for junction temperatures, TJ (Note 7) of -40°C to +125°C. Parameters Dropout Voltage Note 1, Note 5 Symbol VDROPOUT Output Delay Time 5: 6: 7: Units Conditions 330 650 mV IL = 250 mA, VR = 5.0V 525 725 mV IL = 250 mA, 3.3V ≤ VR < 5.0V — 625 975 mV IL = 250 mA, 2.8V ≤ VR < 3.3V — 750 1100 mV IL = 250 mA, 2.5V ≤ VR < 2.8V — — — mV VR < 2.5V, See Maximum Output Current Parameter TDELAY — 600 — µs VIN = 0V to 6V, VOUT = 90% VR, RL = 50Ω resistive eN — 1 PSRR — 35 — dB TSD — 150 — °C Thermal Shutdown Protection 4: Max — Power Supply Ripple Rejection Ratio 3: Typ — Output Noise Note 1: 2: Min µV/(Hz)1/2 IL = 50 mA, f = 1 kHz, COUT = 1 µF f = 100 Hz, COUT = 1 µF, IL = 10 mA, VINAC = 200 mV pk-pk, CIN = 0 µF, VR = 5.0V The minimum VIN must meet two conditions: VIN ≥ 2.7V and VIN ≥ (VOUT(MAX) + VDROPOUT(MAX)). VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V or 5.0V. The input voltage VIN = VOUT(MAX) + VDROPOUT(MAX) or ViIN = 2.7V (whichever is greater); IOUT = 100 µA. TCVOUT = (VOUT-HIGH - VOUT-LOW) x 106/(VR x ΔTemperature), VOUT-HIGH = highest voltage measured over the temperature range. VOUT-LOW = lowest voltage measured over the temperature range. Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output voltage due to heating effects are determined using thermal regulation specification TCVOUT. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, qJA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained junction temperatures above 150°C can impact the device reliability. The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature over the ambient temperature is not significant. TEMPERATURE SPECIFICATIONS(1) Parameters Sym Min Typ Max Units Conditions TJ -40 — +125 °C Steady State Transient Temperature Ranges Operating Junction Temperature Range Maximum Junction Temperature TJ — — +150 °C Storage Temperature Range TA -65 — +150 °C Thermal Resistance, 3LD SOT-223 θJA θJC — — 62 15 — — °C/W EIA/JEDEC JESD51-7 FR-4 0.063 4-Layer Board Thermal Resistance, 3LD SOT-23A θJA θJC — — 336 110 — — °C/W EIA/JEDEC JESD51-7 FR-4 0.063 4-Layer Board Thermal Resistance, 3LD SOT-89 θJA θJC — — 180 52 — — °C/W EIA/JEDEC JESD51-7 FR-4 0.063 4-Layer Board Thermal Resistance, 8LD 2x3 DFN θJA θJC — — 70 13.4 — — °C/W EIA/JEDEC JESD51-7 FR-4 0.063 4-Layer Board Thermal Package Resistance (Note 2) Note 1: 2: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained junction temperatures above 150°C can impact the device reliability. Thermal Resistance values are subject to change. Please visit the Microchip web site for the latest packaging information. DS20005122B-page 4  2012-2013 Microchip Technology Inc. MCP1703A 2.0 TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Note: Unless otherwise indicated: COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 1 mA, TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater. Note: Junction Temperature (TJ) is approximated by soaking the device under test to an ambient temperature equal to the desired junction temperature. The test time is small enough such that the rise in Junction temperature over the Ambient temperature is not significant. 60 VOUT = 1.2V IOUT = 0 µA 4.00 -45°C +130°C 3.00 0°C 2.00 +90°C +25°C 1.00 GND Current (µA) Quiescent Current (µA) 5.00 VOUT = 1.2V VIN = 2.7V 50 40 30 20 10 0.00 0 2 4 6 8 10 12 14 16 0 40 80 Input Voltage (V) FIGURE 2-1: Voltage. Quiescent Current vs. Input FIGURE 2-4: Current. 160 200 Ground Current vs. Load 60 VOUT = 2.5V IOUT = 0 µA 5.00 +130°C 4.00 +90°C 3.00 2.00 +90°C - 45°C 1.00 GND Current (µA) Quiescent Current (µA) 6.00 50 40 VOUT = 2.5V VIN = 3.5V 30 20 VOUT = 5.0V VIN = 6.0V 10 0°C 0.00 0 2 4 6 8 10 12 14 16 0 50 100 Input Voltage (V) FIGURE 2-2: Voltage. 150 200 250 Load Current (mA) Quiescent Current vs. Input FIGURE 2-5: Current. 7 Ground Current vs. Load 3.0 VOUT = 5.0V IOUT = 0 µA 6 Quiescent Current (µA) Quiescent Current (µA) 120 Load Current (mA) - 45°C +25°C 5 4 +130°C 3 0°C +90°C 2 1 IOUT = 0 mA 2.5 2.0 1.5 VOUT = 1.2V VIN = 2.7V 1.0 VOUT = 2.5V VIN = 3.5V VOUT = 5.0V VIN = 6.0V 0.5 0.0 6 8 10 12 14 16 Input Voltage (V) FIGURE 2-3: Voltage. Quiescent Current vs. Input  2012-2013 Microchip Technology Inc. -45 -20 5 30 55 80 105 130 Junction Temperature (°C) FIGURE 2-6: Quiescent Current vs. Junction Temperature. DS20005122B-page 5 MCP1703A Note: Unless otherwise indicated: COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 1 mA, TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater. 1.24 VOUT = 1.2V ILOAD = 1 mA 1.23 -45°C 0°C 1.22 VIN = 3.0V VOUT = 1.2V 1.23 1.21 +130°C 1.20 +90°C +25°C 1.19 Output Voltage (V) Output Voltage (V) 1.24 -45°C 1.22 1.21 1.20 1.19 1.18 1.16 2 4 6 8 10 12 14 16 0 18 20 40 Input Voltage (V) FIGURE 2-7: Voltage. Output Voltage vs. Input FIGURE 2-10: Current. 80 100 120 140 160 180 200 Output Voltage vs. Load 2.54 VOUT = 2.5V ILOAD = 1 mA 2.56 +90°C 2.54 2.52 2.50 2.48 0°C -45°C +25°C 2.46 VIN = 3.5V VOUT = 2.5V 2.53 +130°C Output Voltage (V) Output Voltage (V) 60 Load Current (mA) 2.58 2.52 +90°C +130°C 2.51 2.50 2.49 2.48 +25°C -45°C 2.47 2.44 0°C 2.46 2 4 6 8 10 12 14 16 0 18 50 Input Voltage (V) FIGURE 2-8: Voltage. 100 150 Output Voltage vs. Input FIGURE 2-11: Current. Output Voltage (V) +90°C +130°C 5.08 5.04 5.00 -45°C 4.96 +25°C 250 Output Voltage vs. Load 5.06 VOUT = 5.0V ILOAD = 1 mA 5.12 200 Load Current (mA) 5.16 Output Voltage (V) +90°C +130°C 1.17 1.18 +25°C 0°C 0°C 4.92 5.04 +90°C 5.02 5.00 4.98 4.96 0°C -45°C +25°C 4.94 4.88 VIN = 6V VOUT = 5.0V +130°C 4.92 6 8 10 12 14 16 18 0 Input Voltage (V) FIGURE 2-9: Voltage. DS20005122B-page 6 Output Voltage vs. Input 50 100 150 200 250 Load Current (mA) FIGURE 2-12: Current. Output Voltage vs. Load  2012-2013 Microchip Technology Inc. MCP1703A Note: Unless otherwise indicated: COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 1 mA, TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater. - 45°C 2.00 1.50 - 45°C, 0°C 0°C, +25°C, +90°C, +130°C 1.00 0.50 0.00 0 25 50 4 3 200 2 0 1 -200 0 75 100 125 150 175 200 225 250 0 500 1000 1500 Time (µs) FIGURE 2-16: -400 2500 Dynamic Line Response. 400 VIN VOUT = 2.5V +130°C +90°C +25°C 0°C - 45°C 0 25 50 75 100 125 150 175 200 225 250 VOUT = 2.5V IOUT = 100 mA 4 3 0 2 -200 1 -400 0 0 500 1000 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 Dropout Voltage vs. Load VOUT = 5.0V +130°C +90°C +25°C 0°C - 45°C 0 25 50 75 100 125 150 175 200 225 250 FIGURE 2-17: Dropout Voltage vs. Load  2012-2013 Microchip Technology Inc. 2000 -600 2500 Dynamic Line Response. 800 VOUT = 2.5V ROUT < 0.1Ω 700 600 500 400 300 200 100 0 0 2 4 6 8 10 12 14 16 18 Input Voltage (V) Load Current (mA) FIGURE 2-15: Current. 1500 Time (µs) Short Circuit Current (mA) FIGURE 2-14: Current. 200 VOUT(AC) Load Current (mA) Dropout Voltage (V) 2000 5 1.00 0.90 0.80 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0.00 In nput Voltage (V) Dropout Voltage (V) Dropout Voltage vs. Load 400 VOUT(AC) Load Current (mA) FIGURE 2-13: Current. VOUT = 2.5V IOUT = 10 mA Output Voltage (mVac) 2.50 600 VIN Outp put Voltage (mVac) 5 VOUT = 1.2V In nput Voltage (V) Dropout Voltage (V) 3.00 FIGURE 2-18: Input Voltage. Short Circuit Current vs. DS20005122B-page 7 MCP1703A 1.00 0.80 0.60 0.40 0.20 0.00 -0.20 -0.40 -0.60 -0.80 -1.00 VIN = 5V V = 3.45V IN 0.20 VOUT = 1.2V IOUT = 1 mA to 200 mA Line Regulation (%/V) Load Regulation (%) Note: Unless otherwise indicated: COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 1 mA, TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater. VIN = 14V VIN = 8V 0.16 VIN = 3.45 to 16.0V VOUT = 1.2V -20 5 30 55 80 105 0.08 0.04 250 mA 130 -45 -20 5 VIN = 5V VIN = 10V VIN = 14V 80 105 130 Line Regulation vs. VOUT = 2.5V VIN = 3.5V to 16V 0.20 0.16 0 mA 0.12 0.08 0.04 100 mA 250 mA 0.00 -45 -20 5 30 55 80 105 130 -45 -20 5 Temperature (°C) FIGURE 2-20: Temperature. 30 55 80 105 130 Temperature (°C) Load Regulation vs. FIGURE 2-23: Temperature. Line Regulation vs. 0.24 VOUT = 5.0V IOUT = 1 to 250 mA VIN = 6V VIN = 8V VIN = 16V VIN = 12V VIN = 14V Line Regulation (%/V) Load Regulation (%) 55 0.24 Line Regulation (%/V) Load Regulation (%) FIGURE 2-22: Temperature. VOUT = 2.5V IOUT = 1 mA to 250 mA VIN = 3.65V 30 Temperature (°C) Load Regulation vs. 0.60 0.40 0.20 0.00 -0.20 -0.40 -0.60 -0.80 -1.00 -1.20 -1.40 -1.60 200 mA 0.00 Temperature (°C) FIGURE 2-19: Temperature. 1 mA 0.12 100 mA -45 0.80 0.60 0.40 0.20 0.00 -0.20 -0.40 -0.60 -0.80 -1.00 -1.20 0 mA VOUT = 5.0V VIN = 6.0V to 16.0V 0.20 0 mA 100 mA 0.16 200 mA 0.12 0.08 250 mA 0.04 -45 -20 5 30 55 80 105 130 -45 -20 Temperature (°C) FIGURE 2-21: Temperature. DS20005122B-page 8 Load Regulation vs. FIGURE 2-24: Temperature. 5 30 55 80 Temperature (°C) 105 130 Line Regulation vs.  2012-2013 Microchip Technology Inc. MCP1703A 0 0 -10 -10 -20 -20 -30 -30 PSRR (dB) PSRR (dB) Note: Unless otherwise indicated: COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 1 mA, TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater. -40 -50 VR = 1.2V VIN = 2.9V VINAC = 200 mV p-p CIN = 0 μF IOUT = 10 mA -60 -70 -80 -90 0.01 0.1 1 10 Frequency (kHz) 100 -90 0.01 1000 PSRR vs. Frequency. Output Noise (μV/¥Hz) -30 -40 -50 VR = 1.2V VIN = 3.7V VINAC = 200 mV p-p CIN = 0 μF IOUT = 200 mA -60 -70 -80 0.1 FIGURE 2-26: 1 10 Frequency (kHz) 100 PSRR vs. Frequency. 7 -20 6 -30 5 Volts (V) 8 -40 VR = 5.0V VIN = 6.2V VINAC = 200 mV p-p CIN = 0 ȝF F IOUT = 10 mA -60 -70 1000 VOUT = 1.2V VIN = 2.7V 1.000 VOUT = 5.0V VIN = 6.0V 0.100 VOUT = 2.5V VIN = 3.5V 0.010 0.1 FIGURE 2-29: 0 100 CIN = 1 μF, COUT = 1 μF, IOUT = 50 mA 0.001 0.01 1000 -10 -50 1 10 Frequency (kHz) PSRR vs. Frequency. 10.000 -20 PSRR (dB) 0.1 FIGURE 2-28: 0 PSRR (dB) -60 -70 -10 1 10 Frequency (kHz) 100 1000 Output Noise vs. Frequency. VR = 2.5V, RLOAD = 25Ω VIN = 0V to 5.3V Step VIN 4 3 2 1 -80 -90 0.01 VR = 5.0V VIN = 8.5V VINAC = 800 mV p-p CIN = 0 ȝF F IOUT = 250 mA -50 -80 FIGURE 2-25: -90 0.01 -40 VOUT 0 0.1 FIGURE 2-27: 1 10 Frequency (kHz) 100 PSRR vs. Frequency.  2012-2013 Microchip Technology Inc. 1000 0 200 400 600 800 1000 Time (µs) FIGURE 2-30: Power Up Timing. DS20005122B-page 9 MCP1703A Note: Unless otherwise indicated: COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 1 mA, TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater. VOUT = 2.5V Step 100µ to 100 mA 1000 25 20 500 VOUT (ac) 15 0 10 -500 100 mA 5 -1000 100 µA Ground Current (µA) Output Voltage (mV) 20 30 1500 12 8 4 0 -1500 0 500 1000 1500 2000 VOUT = 5.0V IOUT = 10 mA 16 0 2500 18 16 14 Time (µs) Dynamic Load Response. Output Voltage (mV) 1500 VOUT = 2.5V Step 1 mA to 200 mA 1000 500 6 25 5 20 0 15 -500 10 200 mA -1000 5 1 mA -1500 500 1000 1500 2000 FIGURE 2-34: Voltage. 30 VOUT (ac) 0 0 2500 6 4 2 0 Ground Current vs. Input IOUT = 1 mA 4 3 VOUT = 3.3V 2 1 0 6 5 4 3 2 1 0 Input Voltage (V) Dynamic Load Response. FIGURE 2-35: Voltage. 20 Output Voltage vs. Input 10 Dropout Current (µA) VOUT = 2.5V IOUT = 10 mA 16 Ground Current (µA) 8 VOUT = 5V Time (µs) FIGURE 2-32: 10 Input Voltage (V) Output Voltage (V) FIGURE 2-31: 12 12 8 4 0 IOUT = 1 mA VOUT = 5V 8 6 4 VOUT = 3.3V 2 0 18 16 14 12 10 8 6 4 2 0 6 5 Input Voltage (V) FIGURE 2-33: Voltage. DS20005122B-page 10 Ground Current vs. Input 4 3 2 1 0 Input Voltage (V) FIGURE 2-36: Voltage. Dropout Current vs. Input  2012-2013 Microchip Technology Inc. MCP1703A 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: MCP1703A PIN FUNCTION TABLE 2x3 DFN SOT-223 SOT-23A SOT-89 Name Function 4 2,Tab 1 1 GND Ground Terminal 1 3 2 3 VOUT Regulated Voltage Output 8 1 3 2,Tab VIN Unregulated Supply Voltage 2, 3, 5, 6, 7 — — — NC No Connection 9 — — — EP Exposed Thermal Pad (EP); must be connected to VSS 3.1 Ground Terminal (GND) Regulator ground. Tie GND to the negative side of the output and the negative side of the input capacitor. There is no high current and only the LDO bias current (2.0 µA typical) flows out of this pin. The LDO output regulation is referenced to this pin. Minimize voltage drops between this pin and the negative side of the load. 3.2 Regulated Output Voltage (VOUT) Connect VOUT to the positive side of the load and the positive terminal of the output capacitor. The positive side of the output capacitor should be physically located close to the LDO VOUT pin as is practical. The current flowing out of this pin is equal to the DC load current. 3.3 Unregulated Input Voltage (VIN) Connect VIN to the input unregulated source voltage. Like all low dropout linear regulators, low source impedance is necessary for stable operation of the LDO. The amount of capacitance required to ensure low source impedance depends on the proximity of the input source capacitors or battery type. For most applications, 1 µF of capacitance ensures stable operation of the LDO circuit. The input capacitance requirement can be lowered for applications that have load currents below 100 mA. The type of capacitor used can be ceramic, tantalum or aluminum electrolytic. The low ESR characteristics of the ceramic yields better noise and PSRR performance at high-frequency. 3.4 Exposed Thermal Pad (EP) An internal electrical connection between the Exposed Thermal Pad (EP) and the VSS pin. They must be connected to the same potential on the Printed Circuit Board (PCB).  2012-2013 Microchip Technology Inc. DS20005122B-page 11 MCP1703A 4.0 DETAILED DESCRIPTION 4.1 Output Regulation 4.3 A portion of the LDO output voltage is fed back to the internal error amplifier and compared with the precision internal band gap reference. The error amplifier output adjusts the amount of current that flows through the PChannel pass transistor, thus regulating the output voltage to the desired value. Any changes in input voltage or output current causes the error amplifier to respond and adjust the output voltage to the target voltage (see Figure 4-1). 4.2 Overtemperature The internal power dissipation within the LDO is a function of input-to-output voltage differential and load current. If the power dissipation within the LDO is excessive, the internal junction temperature rises above the typical shutdown threshold of 150°C. At that point, the LDO shuts down and begins to cool to the typical turn-on junction temperature of 130°C. If the power dissipation is low enough, the device will continue to cool and operate normally. If the power dissipation remains high, the thermal shutdown protection circuitry will again turn off the LDO, protecting it from catastrophic failure. Overcurrent The MCP1703A internal circuitry monitors the amount of current flowing through the P-Channel pass transistor. In the event of a short-circuit or excessive output current, the MCP1703A turns off the P-Channel device for a short period, after which the LDO attempts to restart. If the excessive current remains, the cycle will repeat itself. MCP1703A VOUT VIN Error Amplifier +VIN Voltage Reference + Overcurrent Overtemperature GND FIGURE 4-1: DS20005122B-page 12 Block Diagram.  2012-2013 Microchip Technology Inc. MCP1703A 5.0 FUNCTIONAL DESCRIPTION The MCP1703A CMOS low dropout linear regulator is intended for applications that need the lowest current consumption while maintaining output voltage regulation. The operating continuous load range of the MCP1703A is from 0 mA to 250 mA (VR ≥ 2.5V). The input operating voltage ranges from 2.7V to 16.0V, making it capable of operating from two or more alkaline cells or single and multiple Li-Ion cell batteries. 5.1 Input The input of the MCP1703A is connected to the source of the P-Channel PMOS pass transistor. As with all LDO circuits, a relatively low source impedance (10Ω) is needed to prevent the input impedance from causing the LDO to become unstable. The size and type of the capacitor needed depends heavily on the input source type (e.g., battery, power supply) and the output current range of the application. To ensure circuit stability, a 1 µF ceramic capacitor is sufficient for most applications up to 100 mA. Larger values can be used to improve circuit AC performance. The capacitance of the input capacitor should be equal to or greater than the capacitance of the selected output capacitor to ensure energy is available to keep the output capacitor charged during dynamic load changes.  2012-2013 Microchip Technology Inc. 5.2 Output The maximum rated continuous output current for the MCP1703A is 250 mA (VR ≥ 2.5V). For applications where VR < 2.5V, the maximum output current is 200 mA. A minimum output capacitance of 1.0 µF is required for small signal stability in applications that have up to 250 mA output current capability. The capacitor type can be ceramic, tantalum or aluminum electrolytic. The Equivalent Series Resistance (ESR) range on the output capacitor ranges from 0Ω to 2.0Ω. The output capacitor range for ceramic capacitors is 1 µF to 22 µF. Higher output capacitance values may be used for tantalum and electrolytic capacitors. Higher output capacitor values pull the pole of the LDO transfer function inward that results in higher phase shifts which in turn cause a lower crossover frequency. The circuit designer should verify the stability by applying line step and load step testing to their system when using capacitance values greater than 22 µF. 5.3 Output Rise Time When powering up the internal reference output, the typical output rise time of 600 µs is controlled to prevent overshoot of the output voltage. DS20005122B-page 13 MCP1703A 6.0 APPLICATION CIRCUITS AND ISSUES 6.1 The MCP1703A is most commonly used as a voltage regulator. Its low quiescent current and low dropout voltage make it ideal for many battery-powered applications. MCP1703A GND VIN COUT 1 µF Ceramic FIGURE 6-1: 6.1.1 VIN 2.7V to 4.8V VOUT IOUT 50 mA T J ( MAX ) = P TOTAL × Rθ JA + T A ( MAX ) Where: Typical Application VOUT 1.8V EQUATION 6-2: CIN 1 µF Ceramic TJ(MAX) = Maximum continuous junction temperature PTOTAL = Total device power dissipation RθJA = Thermal resistance from junction-to-ambient TA(MAX) = Maximum ambient temperature The maximum power dissipation capability for a package can be calculated given the junction-toambient thermal resistance and the maximum ambient temperature for the application. The following equation can be used to determine the package maximum internal power dissipation. Typical Application Circuit. APPLICATION INPUT CONDITIONS EQUATION 6-3: ( T J ( MAX ) – T A ( MAX ) ) P D ( MAX ) = --------------------------------------------------Rθ JA Package Type = SOT-23A Input Voltage Range = 2.7V to 4.8V Where: VIN maximum = 4.8V PD(MAX) = Maximum device power dissipation VOUT typical = 1.8V TJ(MAX) = Maximum continuous junction temperature TA(MAX) = Maximum ambient temperature RθJA = Thermal resistance from junction-to-ambient IOUT = 50 mA maximum 6.2 Power Calculations 6.2.1 POWER DISSIPATION The internal power dissipation of the MCP1703A is a function of input voltage, output voltage and output current. As a result of the quiescent current draw, the power dissipation is so low that it is insignificant (2.0 µA x VIN). The following equation can be used to calculate the internal power dissipation of the LDO. EQUATION 6-4: T J ( RISE ) = P D ( MAX ) × Rθ JA Where: TJ(RISE) = Rise in device junction temperature over the ambient temperature PTOTAL = Maximum device power dissipation RθJA = Thermal resistance from junction to ambient EQUATION 6-1: P LDO = ( V IN ( MAX ) – V OUT ( MIN ) ) × I OUT ( MAX ) Where: PLDO = LDO Pass device internal power dissipation VIN(MAX) = Maximum input voltage VOUT(MIN) = LDO minimum output voltage The maximum continuous operating junction temperature specified for the MCP1703A is +125°C. To estimate the internal junction temperature of the MCP1703A, the total internal power dissipation is multiplied by the thermal resistance from junction to ambient (RθJA). The thermal resistance from junction to ambient for the SOT-23A pin package is estimated at 336°C/W. DS20005122B-page 14 EQUATION 6-5: T J = T J ( RISE ) + T A Where: TJ = Junction temperature TJ(RISE) = Rise in device junction temperature over the ambient temperature TA = Ambient temperature  2012-2013 Microchip Technology Inc. MCP1703A 6.3 Voltage Regulator Internal power dissipation, junction temperature rise, junction temperature and maximum power dissipation are calculated in the following example. As a result of ground current, the power dissipation is small enough to be neglected. 6.3.1 Junction Temperature Estimate To estimate the internal junction temperature, the calculated temperature rise is added to the ambient or offset temperature. For this example, the worst-case junction temperature is estimated below. TJ = TJ(RISE) + TA(MAX) POWER DISSIPATION EXAMPLE Package Package Type: SOT-23A Input Voltage: VIN = 2.7V to 4.8V TJ = 91.3°C Maximum Package Power Dissipation at +40°C Ambient Temperature Assuming Minimal Copper Usage. SOT-23A (336.0°C/Watt = RθJA) PD(MAX) = (+125°C - 40°C) / 336°C/W LDO Output Voltages and Currents VOUT = 1.8V IOUT = 50 mA PD(MAX) = 253 milli-Watts SOT-89 (153.3°C/Watt = RθJA) PD(MAX) = (+125°C - 40°C) / 153.3°C/W Maximum Ambient Temperature TA(MAX) = +40°C Internal Power Dissipation Internal Power dissipation is the product of the LDO output current multiplied by the voltage across the LDO (VIN to VOUT). PLDO(MAX) = (VIN(MAX) - VOUT(MIN)) x IOUT(MAX) PLDO = (4.8V - (0.97 x 1.8V)) x 50 mA PLDO = 152.7 milli-Watts Device Junction Temperature Rise The internal junction temperature rise is a function of internal power dissipation and the thermal resistance from junction to ambient for the application. The thermal resistance from junction to ambient (RθJA) is derived from an EIA/JEDEC standard for measuring thermal resistance for small surface mount packages. The EIA/JEDEC specification is JESD51-7, “High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages”. The standard describes the test method and board specifications for measuring the thermal resistance from junction to ambient. The actual thermal resistance for a particular application can vary depending on many factors, such as copper area and thickness. Refer to AN792, “A Method to Determine How Much Power a SOT23 Can Dissipate in an Application” (DS00792), for more information regarding this subject. PD(MAX) = 0.554 Watts SOT-223 (62.9°C/Watt = RθJA) PD(MAX) = (+125°C - 40°C) / 62.9°C/W PD(MAX) = 1.35 Watts 6.4 Voltage Reference The MCP1703A can be used not only as a regulator but also as a low quiescent current voltage reference. In many microcontroller applications, the initial accuracy of the reference can be calibrated using production test equipment or by using a ratio measurement. When the initial accuracy is calibrated, the thermal stability and line regulation tolerance are the only errors introduced by the MCP1703A LDO. The low-cost, low quiescent current and small ceramic output capacitor are all advantages when using the MCP1703A as a voltage reference. Ratio Metric Reference MCP1703A 2 µA Bias CIN 1 µF VIN VOUT GND COUT 1 µF PIC® Microcontroller VREF ADO AD1 Bridge Sensor TJ(RISE) = PTOTAL x RθJA TJ(RISE) = 152.7 milli-Watts x 336.0°C/Watt TJ(RISE) = 51.3°C  2012-2013 Microchip Technology Inc. FIGURE 6-2: Using the MCP1703A as a Voltage Reference. DS20005122B-page 15 MCP1703A 6.5 Pulsed Load Applications For some applications, there are pulsed load current events that may exceed the specified 250 mA maximum specification of the MCP1703A. The internal current limit of the MCP1703A prevents high peak load demands from causing non-recoverable damage. The 250 mA rating is a maximum average continuous rating. As long as the average current does not exceed 250 mA, pulsed higher load currents can be applied to the MCP1703A. The typical current limit for the MCP1703A is 500 mA (TA = +25°C). DS20005122B-page 16  2012-2013 Microchip Technology Inc. MCP1703A 7.0 PACKAGING INFORMATION 7.1 Package Marking Information 3-Lead SOT-23A Example: Standard Options for SOT-23A Symbol Voltage* Symbol Voltage* JGNN JMNN JFNN JHNN JNNN 1.2 1.5 1.8 2.5 2.8 JJNN JKNN JPNN JLNN — 3.0 3.3 4.0 5.0 — JG25 * Custom output voltages available upon request. Contact your local Microchip sales office for more information. Example: 3-Lead SOT-89 Standard Options for SOT-89 Symbol Voltage* Symbol Voltage* PA PF MZ PB PG 1.2 1.5 1.8 2.5 2.8 PC PD PH PE — 3.0 3.3 4.0 5.0 — PA1211 256 * Custom output voltages available upon request. Contact your local Microchip sales office for more information. Example: 3-Lead SOT-223 Standard Options for SOT-223 Symbol Voltage* Symbol Voltage* 12 15 18 25 28 1.2 1.5 1.8 2.5 2.8 30 33 40 50 — 3.0 3.3 4.0 5.0 — 33 3.3 — — 1703A 12E1211 256 Custom * Custom output voltages available upon request. Contact your local Microchip sales office for more information. 8-Lead DFN (2 x 3) Example: Standard Options for 8-Lead DFN (2 x 3) Symbol Voltage* Symbol Voltage* ALQ ALR ALS ALT ALU 1.2 1.5 1.8 2.5 2.8 ALV ALW ALX ALY — 3.0 3.3 4.0 5.0 — ALQ 211 25 * Custom output voltages available upon request. Contact your local Microchip sales office for more information. Legend: XX...X Y YY WW NNN e3 * Note: Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information.  2012-2013 Microchip Technology Inc. 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