MCP1703A
250 mA, 16V, Low Quiescent Current LDO Regulator
Features:
Description:
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The MCP1703A is an improved version of the
MCP1703 low dropout (LDO) voltage regulator that can
deliver up to 250 mA of current while consuming only
2.0 µA of quiescent current (typical). The input
operating range is specified from 2.7V to 16.0V, making
it an ideal choice for two to six primary cell batterypowered applications, 9V alkaline and one or two-cell
Li-Ion-powered applications.
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Reduced Ground Current During Dropout
Faster Startup Time
2.0 µA Typical Quiescent Current
Input Operating Voltage Range: 2.7V to16.0V
250 mA Output Current for Output Voltages ≥ 2.5V
200 mA Output Current for Output Voltages < 2.5V
Low Dropout Voltage, 625 mV Typical @ 250 mA
for VR = 2.8V
0.4% Typical Output Voltage Tolerance
Standard Output Voltage Options:
- 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V,
5.0V
Output Voltage Range: 1.2V to 5.5V in 0.1V
Increments (50 mV increments available upon
request)
A/D Friendly Voltage Options: 2.05V, 3.07V, 4.1V
Stable with 1.0 µF to 22 µF Ceramic Output
Capacitance
Short-Circuit Protection
Overtemperature Protection
Applications:
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Battery-Powered Devices
Battery-Powered Alarm Circuits
Smoke Detectors
CO2 Detectors
Pagers and Cellular Phones
Smart Battery Packs
Low Quiescent Current Voltage Reference
PDAs
Digital Cameras
Microcontroller Power
Solar-Powered Instruments
Consumer Products
The MCP1703A is capable of delivering 250 mA with
only 625 mV (typical) of input to output voltage
differential (VOUT = 2.8V). The output voltage tolerance
of the MCP1703A is typically ±0.4% at +25°C and ±3%
maximum over the operating junction temperature
range of -40°C to +125°C. Line regulation is ±0.1%
typical at +25°C.
Output voltages available for the MCP1703A range
from 1.2V to 5.5V. The LDO output is stable when using
only 1 µF of output capacitance. Ceramic, tantalum or
aluminum electrolytic capacitors can all be used for
input and output. Overcurrent limit and overtemperature
shutdown provide a robust solution for any application.
Package options include the SOT-223-3, SOT-23A,
2x3 DFN-8 and SOT-89-3.
Package Types
8 VIN
SOT-23A
VIN
7 NC
3
2x3 DFN*
VOUT 1
NC 2
NC 3
GND 4
EP
9
6 NC
5 NC
1
2
GND VOUT
SOT-223
SOT-89
VIN
Related Literature:
• AN765, “Using Microchip’s Micropower LDOs”,
DS00765, Microchip Technology Inc., 2007
• AN766, “Pin-Compatible CMOS Upgrades to
Bipolar LDOs”, DS00766,
Microchip Technology Inc., 2003
• AN792, “A Method to Determine How Much
Power a SOT23 Can Dissipate in an Application”,
DS00792, Microchip Technology Inc., 2001
2012-2013 Microchip Technology Inc.
1
2
3
GND VIN VOUT
1
2
3
VIN GND VOUT
* Includes Exposed Thermal Pad (EP); see Table 3-1.
DS20005122B-page 1
MCP1703A
Functional Block Diagrams
MCP1703A
VOUT
VIN
Error Amplifier
+VIN
Voltage
Reference
+
Overcurrent
Overtemperature
GND
Typical Application Circuits
MCP1703A
VOUT
3.3V
VOUT
VIN
9V
Battery
DS20005122B-page 2
+
CIN
1 µF Ceramic
VIN
VIN
COUT
1 µF Ceramic
IOUT
50 mA
GND
2012-2013 Microchip Technology Inc.
MCP1703A
1.0
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
VDD..................................................................................+18V
All inputs and outputs w.r.t. .............(VSS-0.3V) to (VIN+0.3V)
Peak Output Current ...................................................500 mA
Storage temperature .....................................-65°C to +150°C
Maximum Junction Temperature ................................. +150°C
ESD protection on all pins (HBM; MM) ............. ≥ 4 kV; ≥ 400V
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, all limits are established for VIN = VOUT(MAX) + VDROPOUT(MAX), Note 1,
ILOAD = 1 mA, COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C. Boldface type applies for junction temperatures,
TJ (Note 7) of -40°C to +125°C.
Parameters
Symbol
Min
Typ
Max
Units
Conditions
VIN
2.7
—
16.0
V
Note 1
Iq
—
2.0
5
µA
IL = 0 mA
IOUT
250
—
—
mA
For VR ≥ 2.5V
50
100
—
mA
For VR < 2.5V, VIN ≥ 2.7V
100
130
—
mA
For VR < 2.5V, VIN ≥ 2.95V
150
200
—
mA
For VR < 2.5V, VIN ≥ 3.2V
200
230
—
mA
For VR < 2.5V, VIN ≥ 3.45V
IOUT_SC
—
400
—
mA
VIN = VIN(MIN) (Note 1),
VOUT = GND,
Current (average current) measured
10 ms after short is applied.
VOUT
VR-3.0%
VR±0.4%
VR+3.0%
V
VR-2.0%
VR±0.4%
VR+2.0%
V
VR-1.0%
VR±0.4%
VR+1.0%
V
Input / Output Characteristics
Input Operating Voltage
Input Quiescent Current
Maximum Output Current
Output Short Circuit Current
Output Voltage Regulation
VOUT Temperature Coefficient
Note 2
1% Custom
TCVOUT
—
65
—
ppm/°C
Line Regulation
DVOUT/
(VOUTxΔVIN)
-0.3
±0.1
+0.3
%/V
(VOUT(MAX) + VDROPOUT(MAX)) ≤ VIN
≤ 16V, Note 1
Load Regulation
ΔVOUT/VOUT
-2.5
±1.0
+2.5
%
IL = 1.0 mA to 250 mA for VR ≥ 2.5V
IL = 1.0 mA to 200 mA for VR < 2.5V
VIN = 3.65V, Note 4
Note 1:
2:
3:
4:
5:
6:
7:
Note 3
The minimum VIN must meet two conditions: VIN ≥ 2.7V and VIN ≥ (VOUT(MAX) + VDROPOUT(MAX)).
VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V or 5.0V. The
input voltage VIN = VOUT(MAX) + VDROPOUT(MAX) or ViIN = 2.7V (whichever is greater); IOUT = 100 µA.
TCVOUT = (VOUT-HIGH - VOUT-LOW) x 106/(VR x ΔTemperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, qJA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired junction temperature. The test time is small enough such that the rise in the junction temperature over the
ambient temperature is not significant.
2012-2013 Microchip Technology Inc.
DS20005122B-page 3
MCP1703A
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits are established for VIN = VOUT(MAX) + VDROPOUT(MAX), Note 1,
ILOAD = 1 mA, COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C. Boldface type applies for junction temperatures,
TJ (Note 7) of -40°C to +125°C.
Parameters
Dropout Voltage
Note 1, Note 5
Symbol
VDROPOUT
Output Delay Time
5:
6:
7:
Units
Conditions
330
650
mV
IL = 250 mA, VR = 5.0V
525
725
mV
IL = 250 mA, 3.3V ≤ VR < 5.0V
—
625
975
mV
IL = 250 mA, 2.8V ≤ VR < 3.3V
—
750
1100
mV
IL = 250 mA, 2.5V ≤ VR < 2.8V
—
—
—
mV
VR < 2.5V, See Maximum Output
Current Parameter
TDELAY
—
600
—
µs
VIN = 0V to 6V, VOUT = 90% VR,
RL = 50Ω resistive
eN
—
1
PSRR
—
35
—
dB
TSD
—
150
—
°C
Thermal Shutdown Protection
4:
Max
—
Power Supply Ripple
Rejection Ratio
3:
Typ
—
Output Noise
Note 1:
2:
Min
µV/(Hz)1/2 IL = 50 mA, f = 1 kHz, COUT = 1 µF
f = 100 Hz, COUT = 1 µF, IL = 10 mA,
VINAC = 200 mV pk-pk, CIN = 0 µF,
VR = 5.0V
The minimum VIN must meet two conditions: VIN ≥ 2.7V and VIN ≥ (VOUT(MAX) + VDROPOUT(MAX)).
VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V or 5.0V. The
input voltage VIN = VOUT(MAX) + VDROPOUT(MAX) or ViIN = 2.7V (whichever is greater); IOUT = 100 µA.
TCVOUT = (VOUT-HIGH - VOUT-LOW) x 106/(VR x ΔTemperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, qJA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired junction temperature. The test time is small enough such that the rise in the junction temperature over the
ambient temperature is not significant.
TEMPERATURE SPECIFICATIONS(1)
Parameters
Sym
Min
Typ
Max
Units
Conditions
TJ
-40
—
+125
°C
Steady State
Transient
Temperature Ranges
Operating Junction Temperature Range
Maximum Junction Temperature
TJ
—
—
+150
°C
Storage Temperature Range
TA
-65
—
+150
°C
Thermal Resistance, 3LD SOT-223
θJA
θJC
—
—
62
15
—
—
°C/W
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
Thermal Resistance, 3LD SOT-23A
θJA
θJC
—
—
336
110
—
—
°C/W
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
Thermal Resistance, 3LD SOT-89
θJA
θJC
—
—
180
52
—
—
°C/W
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
Thermal Resistance, 8LD 2x3 DFN
θJA
θJC
—
—
70
13.4
—
—
°C/W
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
Thermal Package Resistance (Note 2)
Note 1:
2:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
Thermal Resistance values are subject to change. Please visit the Microchip web site for the latest packaging
information.
DS20005122B-page 4
2012-2013 Microchip Technology Inc.
MCP1703A
2.0
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Note: Unless otherwise indicated: COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 1 mA, TA = +25°C,
VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
Note: Junction Temperature (TJ) is approximated by soaking the device under test to an ambient temperature equal to
the desired junction temperature. The test time is small enough such that the rise in Junction temperature over the
Ambient temperature is not significant.
60
VOUT = 1.2V
IOUT = 0 µA
4.00
-45°C
+130°C
3.00
0°C
2.00
+90°C +25°C
1.00
GND Current (µA)
Quiescent Current (µA)
5.00
VOUT = 1.2V
VIN = 2.7V
50
40
30
20
10
0.00
0
2
4
6
8
10
12
14
16
0
40
80
Input Voltage (V)
FIGURE 2-1:
Voltage.
Quiescent Current vs. Input
FIGURE 2-4:
Current.
160
200
Ground Current vs. Load
60
VOUT = 2.5V
IOUT = 0 µA
5.00
+130°C
4.00
+90°C
3.00
2.00
+90°C
- 45°C
1.00
GND Current (µA)
Quiescent Current (µA)
6.00
50
40
VOUT = 2.5V
VIN = 3.5V
30
20
VOUT = 5.0V
VIN = 6.0V
10
0°C
0.00
0
2
4
6
8
10
12
14
16
0
50
100
Input Voltage (V)
FIGURE 2-2:
Voltage.
150
200
250
Load Current (mA)
Quiescent Current vs. Input
FIGURE 2-5:
Current.
7
Ground Current vs. Load
3.0
VOUT = 5.0V
IOUT = 0 µA
6
Quiescent Current (µA)
Quiescent Current (µA)
120
Load Current (mA)
- 45°C
+25°C
5
4
+130°C
3
0°C
+90°C
2
1
IOUT = 0 mA
2.5
2.0
1.5
VOUT = 1.2V
VIN = 2.7V
1.0
VOUT = 2.5V
VIN = 3.5V
VOUT = 5.0V
VIN = 6.0V
0.5
0.0
6
8
10
12
14
16
Input Voltage (V)
FIGURE 2-3:
Voltage.
Quiescent Current vs. Input
2012-2013 Microchip Technology Inc.
-45
-20
5
30
55
80
105
130
Junction Temperature (°C)
FIGURE 2-6:
Quiescent Current vs.
Junction Temperature.
DS20005122B-page 5
MCP1703A
Note: Unless otherwise indicated: COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 1 mA, TA = +25°C,
VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
1.24
VOUT = 1.2V
ILOAD = 1 mA
1.23
-45°C
0°C
1.22
VIN = 3.0V
VOUT = 1.2V
1.23
1.21
+130°C
1.20
+90°C
+25°C
1.19
Output Voltage (V)
Output Voltage (V)
1.24
-45°C
1.22
1.21
1.20
1.19
1.18
1.16
2
4
6
8
10
12
14
16
0
18
20
40
Input Voltage (V)
FIGURE 2-7:
Voltage.
Output Voltage vs. Input
FIGURE 2-10:
Current.
80 100 120 140 160 180 200
Output Voltage vs. Load
2.54
VOUT = 2.5V
ILOAD = 1 mA
2.56
+90°C
2.54
2.52
2.50
2.48
0°C
-45°C
+25°C
2.46
VIN = 3.5V
VOUT = 2.5V
2.53
+130°C
Output Voltage (V)
Output Voltage (V)
60
Load Current (mA)
2.58
2.52
+90°C
+130°C
2.51
2.50
2.49
2.48
+25°C
-45°C
2.47
2.44
0°C
2.46
2
4
6
8
10
12
14
16
0
18
50
Input Voltage (V)
FIGURE 2-8:
Voltage.
100
150
Output Voltage vs. Input
FIGURE 2-11:
Current.
Output Voltage (V)
+90°C
+130°C
5.08
5.04
5.00
-45°C
4.96
+25°C
250
Output Voltage vs. Load
5.06
VOUT = 5.0V
ILOAD = 1 mA
5.12
200
Load Current (mA)
5.16
Output Voltage (V)
+90°C
+130°C
1.17
1.18
+25°C
0°C
0°C
4.92
5.04
+90°C
5.02
5.00
4.98
4.96
0°C
-45°C
+25°C
4.94
4.88
VIN = 6V
VOUT = 5.0V
+130°C
4.92
6
8
10
12
14
16
18
0
Input Voltage (V)
FIGURE 2-9:
Voltage.
DS20005122B-page 6
Output Voltage vs. Input
50
100
150
200
250
Load Current (mA)
FIGURE 2-12:
Current.
Output Voltage vs. Load
2012-2013 Microchip Technology Inc.
MCP1703A
Note: Unless otherwise indicated: COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 1 mA, TA = +25°C,
VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
- 45°C
2.00
1.50
- 45°C, 0°C
0°C, +25°C, +90°C, +130°C
1.00
0.50
0.00
0
25
50
4
3
200
2
0
1
-200
0
75 100 125 150 175 200 225 250
0
500
1000
1500
Time (µs)
FIGURE 2-16:
-400
2500
Dynamic Line Response.
400
VIN
VOUT = 2.5V
+130°C
+90°C
+25°C
0°C
- 45°C
0
25
50
75 100 125 150 175 200 225 250
VOUT = 2.5V
IOUT = 100 mA
4
3
0
2
-200
1
-400
0
0
500
1000
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
Dropout Voltage vs. Load
VOUT = 5.0V
+130°C
+90°C
+25°C
0°C
- 45°C
0
25
50
75 100 125 150 175 200 225 250
FIGURE 2-17:
Dropout Voltage vs. Load
2012-2013 Microchip Technology Inc.
2000
-600
2500
Dynamic Line Response.
800
VOUT = 2.5V
ROUT < 0.1Ω
700
600
500
400
300
200
100
0
0
2
4
6
8
10
12
14
16
18
Input Voltage (V)
Load Current (mA)
FIGURE 2-15:
Current.
1500
Time (µs)
Short Circuit Current (mA)
FIGURE 2-14:
Current.
200
VOUT(AC)
Load Current (mA)
Dropout Voltage (V)
2000
5
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0.00
In
nput Voltage (V)
Dropout Voltage (V)
Dropout Voltage vs. Load
400
VOUT(AC)
Load Current (mA)
FIGURE 2-13:
Current.
VOUT = 2.5V
IOUT = 10 mA
Output Voltage (mVac)
2.50
600
VIN
Outp
put Voltage (mVac)
5
VOUT = 1.2V
In
nput Voltage (V)
Dropout Voltage (V)
3.00
FIGURE 2-18:
Input Voltage.
Short Circuit Current vs.
DS20005122B-page 7
MCP1703A
1.00
0.80
0.60
0.40
0.20
0.00
-0.20
-0.40
-0.60
-0.80
-1.00
VIN = 5V V = 3.45V
IN
0.20
VOUT = 1.2V
IOUT = 1 mA to 200 mA
Line Regulation (%/V)
Load Regulation (%)
Note: Unless otherwise indicated: COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 1 mA, TA = +25°C,
VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
VIN = 14V
VIN = 8V
0.16
VIN = 3.45 to 16.0V
VOUT = 1.2V
-20
5
30
55
80
105
0.08
0.04
250 mA
130
-45
-20
5
VIN = 5V
VIN = 10V
VIN = 14V
80
105
130
Line Regulation vs.
VOUT = 2.5V
VIN = 3.5V to 16V
0.20
0.16
0 mA
0.12
0.08
0.04
100 mA
250 mA
0.00
-45
-20
5
30
55
80
105
130
-45
-20
5
Temperature (°C)
FIGURE 2-20:
Temperature.
30
55
80
105
130
Temperature (°C)
Load Regulation vs.
FIGURE 2-23:
Temperature.
Line Regulation vs.
0.24
VOUT = 5.0V
IOUT = 1 to 250 mA
VIN = 6V
VIN = 8V
VIN = 16V
VIN = 12V
VIN = 14V
Line Regulation (%/V)
Load Regulation (%)
55
0.24
Line Regulation (%/V)
Load Regulation (%)
FIGURE 2-22:
Temperature.
VOUT = 2.5V
IOUT = 1 mA to 250 mA
VIN = 3.65V
30
Temperature (°C)
Load Regulation vs.
0.60
0.40
0.20
0.00
-0.20
-0.40
-0.60
-0.80
-1.00
-1.20
-1.40
-1.60
200 mA
0.00
Temperature (°C)
FIGURE 2-19:
Temperature.
1 mA
0.12
100 mA
-45
0.80
0.60
0.40
0.20
0.00
-0.20
-0.40
-0.60
-0.80
-1.00
-1.20
0 mA
VOUT = 5.0V
VIN = 6.0V to 16.0V
0.20
0 mA
100 mA
0.16
200 mA
0.12
0.08
250 mA
0.04
-45
-20
5
30
55
80
105
130
-45
-20
Temperature (°C)
FIGURE 2-21:
Temperature.
DS20005122B-page 8
Load Regulation vs.
FIGURE 2-24:
Temperature.
5
30
55
80
Temperature (°C)
105
130
Line Regulation vs.
2012-2013 Microchip Technology Inc.
MCP1703A
0
0
-10
-10
-20
-20
-30
-30
PSRR (dB)
PSRR (dB)
Note: Unless otherwise indicated: COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 1 mA, TA = +25°C,
VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
-40
-50
VR = 1.2V
VIN = 2.9V
VINAC = 200 mV p-p
CIN = 0 μF
IOUT = 10 mA
-60
-70
-80
-90
0.01
0.1
1
10
Frequency (kHz)
100
-90
0.01
1000
PSRR vs. Frequency.
Output Noise (μV/¥Hz)
-30
-40
-50
VR = 1.2V
VIN = 3.7V
VINAC = 200 mV p-p
CIN = 0 μF
IOUT = 200 mA
-60
-70
-80
0.1
FIGURE 2-26:
1
10
Frequency (kHz)
100
PSRR vs. Frequency.
7
-20
6
-30
5
Volts (V)
8
-40
VR = 5.0V
VIN = 6.2V
VINAC = 200 mV p-p
CIN = 0 ȝF
F
IOUT = 10 mA
-60
-70
1000
VOUT = 1.2V
VIN = 2.7V
1.000
VOUT = 5.0V
VIN = 6.0V
0.100
VOUT = 2.5V
VIN = 3.5V
0.010
0.1
FIGURE 2-29:
0
100
CIN = 1 μF, COUT = 1 μF, IOUT = 50 mA
0.001
0.01
1000
-10
-50
1
10
Frequency (kHz)
PSRR vs. Frequency.
10.000
-20
PSRR (dB)
0.1
FIGURE 2-28:
0
PSRR (dB)
-60
-70
-10
1
10
Frequency (kHz)
100
1000
Output Noise vs. Frequency.
VR = 2.5V, RLOAD = 25Ω
VIN = 0V to 5.3V Step
VIN
4
3
2
1
-80
-90
0.01
VR = 5.0V
VIN = 8.5V
VINAC = 800 mV p-p
CIN = 0 ȝF
F
IOUT = 250 mA
-50
-80
FIGURE 2-25:
-90
0.01
-40
VOUT
0
0.1
FIGURE 2-27:
1
10
Frequency (kHz)
100
PSRR vs. Frequency.
2012-2013 Microchip Technology Inc.
1000
0
200
400
600
800
1000
Time (µs)
FIGURE 2-30:
Power Up Timing.
DS20005122B-page 9
MCP1703A
Note: Unless otherwise indicated: COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 1 mA, TA = +25°C,
VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
VOUT = 2.5V
Step 100µ to 100 mA
1000
25
20
500
VOUT (ac)
15
0
10
-500
100 mA
5
-1000
100 µA
Ground Current (µA)
Output Voltage (mV)
20
30
1500
12
8
4
0
-1500
0
500
1000
1500
2000
VOUT = 5.0V
IOUT = 10 mA
16
0
2500
18
16
14
Time (µs)
Dynamic Load Response.
Output Voltage (mV)
1500
VOUT = 2.5V
Step 1 mA to 200 mA
1000
500
6
25
5
20
0
15
-500
10
200 mA
-1000
5
1 mA
-1500
500
1000
1500
2000
FIGURE 2-34:
Voltage.
30
VOUT (ac)
0
0
2500
6
4
2
0
Ground Current vs. Input
IOUT = 1 mA
4
3
VOUT = 3.3V
2
1
0
6
5
4
3
2
1
0
Input Voltage (V)
Dynamic Load Response.
FIGURE 2-35:
Voltage.
20
Output Voltage vs. Input
10
Dropout Current (µA)
VOUT = 2.5V
IOUT = 10 mA
16
Ground Current (µA)
8
VOUT = 5V
Time (µs)
FIGURE 2-32:
10
Input Voltage (V)
Output Voltage (V)
FIGURE 2-31:
12
12
8
4
0
IOUT = 1 mA
VOUT = 5V
8
6
4
VOUT = 3.3V
2
0
18
16
14
12
10
8
6
4
2
0
6
5
Input Voltage (V)
FIGURE 2-33:
Voltage.
DS20005122B-page 10
Ground Current vs. Input
4
3
2
1
0
Input Voltage (V)
FIGURE 2-36:
Voltage.
Dropout Current vs. Input
2012-2013 Microchip Technology Inc.
MCP1703A
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
MCP1703A PIN FUNCTION TABLE
2x3 DFN
SOT-223
SOT-23A
SOT-89
Name
Function
4
2,Tab
1
1
GND
Ground Terminal
1
3
2
3
VOUT
Regulated Voltage Output
8
1
3
2,Tab
VIN
Unregulated Supply Voltage
2, 3, 5, 6, 7
—
—
—
NC
No Connection
9
—
—
—
EP
Exposed Thermal Pad (EP); must be
connected to VSS
3.1
Ground Terminal (GND)
Regulator ground. Tie GND to the negative side of the
output and the negative side of the input capacitor.
There is no high current and only the LDO bias current
(2.0 µA typical) flows out of this pin. The LDO output
regulation is referenced to this pin. Minimize voltage
drops between this pin and the negative side of the
load.
3.2
Regulated Output Voltage (VOUT)
Connect VOUT to the positive side of the load and the
positive terminal of the output capacitor. The positive
side of the output capacitor should be physically
located close to the LDO VOUT pin as is practical. The
current flowing out of this pin is equal to the DC load
current.
3.3
Unregulated Input Voltage (VIN)
Connect VIN to the input unregulated source voltage.
Like all low dropout linear regulators, low source
impedance is necessary for stable operation of the
LDO. The amount of capacitance required to ensure
low source impedance depends on the proximity of the
input source capacitors or battery type. For most
applications, 1 µF of capacitance ensures stable
operation of the LDO circuit. The input capacitance
requirement can be lowered for applications that have
load currents below 100 mA. The type of capacitor
used can be ceramic, tantalum or aluminum
electrolytic. The low ESR characteristics of the ceramic
yields better noise and PSRR performance at
high-frequency.
3.4
Exposed Thermal Pad (EP)
An internal electrical connection between the Exposed
Thermal Pad (EP) and the VSS pin. They must be
connected to the same potential on the Printed Circuit
Board (PCB).
2012-2013 Microchip Technology Inc.
DS20005122B-page 11
MCP1703A
4.0
DETAILED DESCRIPTION
4.1
Output Regulation
4.3
A portion of the LDO output voltage is fed back to the
internal error amplifier and compared with the precision
internal band gap reference. The error amplifier output
adjusts the amount of current that flows through the PChannel pass transistor, thus regulating the output
voltage to the desired value. Any changes in input
voltage or output current causes the error amplifier to
respond and adjust the output voltage to the target
voltage (see Figure 4-1).
4.2
Overtemperature
The internal power dissipation within the LDO is a
function of input-to-output voltage differential and load
current. If the power dissipation within the LDO is
excessive, the internal junction temperature rises
above the typical shutdown threshold of 150°C. At that
point, the LDO shuts down and begins to cool to the
typical turn-on junction temperature of 130°C. If the
power dissipation is low enough, the device will
continue to cool and operate normally. If the power
dissipation remains high, the thermal shutdown
protection circuitry will again turn off the LDO,
protecting it from catastrophic failure.
Overcurrent
The MCP1703A internal circuitry monitors the amount
of current flowing through the P-Channel pass
transistor. In the event of a short-circuit or excessive
output current, the MCP1703A turns off the P-Channel
device for a short period, after which the LDO attempts
to restart. If the excessive current remains, the cycle
will repeat itself.
MCP1703A
VOUT
VIN
Error Amplifier
+VIN
Voltage
Reference
+
Overcurrent
Overtemperature
GND
FIGURE 4-1:
DS20005122B-page 12
Block Diagram.
2012-2013 Microchip Technology Inc.
MCP1703A
5.0
FUNCTIONAL DESCRIPTION
The MCP1703A CMOS low dropout linear regulator is
intended for applications that need the lowest current
consumption while maintaining output voltage
regulation. The operating continuous load range of the
MCP1703A is from 0 mA to 250 mA (VR ≥ 2.5V). The
input operating voltage ranges from 2.7V to 16.0V,
making it capable of operating from two or more
alkaline cells or single and multiple Li-Ion cell batteries.
5.1
Input
The input of the MCP1703A is connected to the source
of the P-Channel PMOS pass transistor. As with all
LDO circuits, a relatively low source impedance (10Ω)
is needed to prevent the input impedance from causing
the LDO to become unstable. The size and type of the
capacitor needed depends heavily on the input source
type (e.g., battery, power supply) and the output current
range of the application. To ensure circuit stability, a
1 µF ceramic capacitor is sufficient for most
applications up to 100 mA. Larger values can be used
to improve circuit AC performance. The capacitance of
the input capacitor should be equal to or greater than
the capacitance of the selected output capacitor to
ensure energy is available to keep the output capacitor
charged during dynamic load changes.
2012-2013 Microchip Technology Inc.
5.2
Output
The maximum rated continuous output current for the
MCP1703A is 250 mA (VR ≥ 2.5V). For applications
where VR < 2.5V, the maximum output current is
200 mA.
A minimum output capacitance of 1.0 µF is required for
small signal stability in applications that have up to
250 mA output current capability. The capacitor type
can be ceramic, tantalum or aluminum electrolytic. The
Equivalent Series Resistance (ESR) range on the
output capacitor ranges from 0Ω to 2.0Ω.
The output capacitor range for ceramic capacitors is
1 µF to 22 µF. Higher output capacitance values may
be used for tantalum and electrolytic capacitors. Higher
output capacitor values pull the pole of the LDO
transfer function inward that results in higher phase
shifts which in turn cause a lower crossover frequency.
The circuit designer should verify the stability by
applying line step and load step testing to their system
when using capacitance values greater than 22 µF.
5.3
Output Rise Time
When powering up the internal reference output, the
typical output rise time of 600 µs is controlled to
prevent overshoot of the output voltage.
DS20005122B-page 13
MCP1703A
6.0
APPLICATION CIRCUITS AND
ISSUES
6.1
The MCP1703A is most commonly used as a voltage
regulator. Its low quiescent current and low dropout
voltage make it ideal for many battery-powered
applications.
MCP1703A
GND
VIN
COUT
1 µF Ceramic
FIGURE 6-1:
6.1.1
VIN
2.7V to 4.8V
VOUT
IOUT
50 mA
T J ( MAX ) = P TOTAL × Rθ JA + T A ( MAX )
Where:
Typical Application
VOUT
1.8V
EQUATION 6-2:
CIN
1 µF Ceramic
TJ(MAX)
=
Maximum continuous junction
temperature
PTOTAL
=
Total device power dissipation
RθJA
=
Thermal resistance from
junction-to-ambient
TA(MAX)
=
Maximum ambient temperature
The maximum power dissipation capability for a
package can be calculated given the junction-toambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
Typical Application Circuit.
APPLICATION INPUT CONDITIONS
EQUATION 6-3:
( T J ( MAX ) – T A ( MAX ) )
P D ( MAX ) = --------------------------------------------------Rθ JA
Package Type = SOT-23A
Input Voltage Range = 2.7V to 4.8V
Where:
VIN maximum = 4.8V
PD(MAX)
=
Maximum device power dissipation
VOUT typical = 1.8V
TJ(MAX)
=
Maximum continuous junction
temperature
TA(MAX)
=
Maximum ambient temperature
RθJA
=
Thermal resistance from
junction-to-ambient
IOUT = 50 mA maximum
6.2
Power Calculations
6.2.1
POWER DISSIPATION
The internal power dissipation of the MCP1703A is a
function of input voltage, output voltage and output
current. As a result of the quiescent current draw, the
power dissipation is so low that it is insignificant (2.0 µA
x VIN). The following equation can be used to calculate
the internal power dissipation of the LDO.
EQUATION 6-4:
T J ( RISE ) = P D ( MAX ) × Rθ JA
Where:
TJ(RISE)
=
Rise in device junction temperature
over the ambient temperature
PTOTAL
=
Maximum device power dissipation
RθJA
=
Thermal resistance from junction to
ambient
EQUATION 6-1:
P LDO = ( V IN ( MAX ) – V OUT ( MIN ) ) × I OUT ( MAX )
Where:
PLDO
=
LDO Pass device internal power
dissipation
VIN(MAX)
=
Maximum input voltage
VOUT(MIN)
=
LDO minimum output voltage
The maximum continuous operating junction
temperature specified for the MCP1703A is +125°C. To
estimate the internal junction temperature of the
MCP1703A, the total internal power dissipation is
multiplied by the thermal resistance from junction to
ambient (RθJA). The thermal resistance from junction
to ambient for the SOT-23A pin package is estimated at
336°C/W.
DS20005122B-page 14
EQUATION 6-5:
T J = T J ( RISE ) + T A
Where:
TJ
=
Junction temperature
TJ(RISE)
=
Rise in device junction temperature
over the ambient temperature
TA
=
Ambient temperature
2012-2013 Microchip Technology Inc.
MCP1703A
6.3
Voltage Regulator
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
are calculated in the following example. As a result of
ground current, the power dissipation is small enough
to be neglected.
6.3.1
Junction Temperature Estimate
To estimate the internal junction temperature, the
calculated temperature rise is added to the ambient or
offset temperature. For this example, the worst-case
junction temperature is estimated below.
TJ = TJ(RISE) + TA(MAX)
POWER DISSIPATION EXAMPLE
Package
Package Type: SOT-23A
Input Voltage:
VIN = 2.7V to 4.8V
TJ = 91.3°C
Maximum Package Power Dissipation at +40°C
Ambient Temperature Assuming Minimal Copper
Usage.
SOT-23A (336.0°C/Watt = RθJA)
PD(MAX) = (+125°C - 40°C) / 336°C/W
LDO Output Voltages and Currents
VOUT = 1.8V
IOUT = 50 mA
PD(MAX) = 253 milli-Watts
SOT-89 (153.3°C/Watt = RθJA)
PD(MAX) = (+125°C - 40°C) / 153.3°C/W
Maximum Ambient Temperature
TA(MAX) = +40°C
Internal Power Dissipation
Internal Power dissipation is the product of the LDO
output current multiplied by the voltage across the
LDO
(VIN to VOUT).
PLDO(MAX) = (VIN(MAX) - VOUT(MIN)) x IOUT(MAX)
PLDO = (4.8V - (0.97 x 1.8V)) x 50 mA
PLDO = 152.7 milli-Watts
Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction to ambient for the application. The
thermal resistance from junction to ambient (RθJA) is
derived from an EIA/JEDEC standard for measuring
thermal resistance for small surface mount packages.
The EIA/JEDEC specification is JESD51-7, “High
Effective Thermal Conductivity Test Board for Leaded
Surface Mount Packages”. The standard describes the
test method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors, such as copper area and
thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT23 Can Dissipate in an
Application” (DS00792), for more information regarding
this subject.
PD(MAX) = 0.554 Watts
SOT-223 (62.9°C/Watt = RθJA)
PD(MAX) = (+125°C - 40°C) / 62.9°C/W
PD(MAX) = 1.35 Watts
6.4
Voltage Reference
The MCP1703A can be used not only as a regulator but
also as a low quiescent current voltage reference. In
many microcontroller applications, the initial accuracy
of the reference can be calibrated using production test
equipment or by using a ratio measurement. When the
initial accuracy is calibrated, the thermal stability and
line regulation tolerance are the only errors introduced
by the MCP1703A LDO. The low-cost, low quiescent
current and small ceramic output capacitor are all
advantages when using the MCP1703A as a voltage
reference.
Ratio Metric Reference
MCP1703A
2 µA Bias
CIN
1 µF
VIN
VOUT
GND
COUT
1 µF
PIC®
Microcontroller
VREF
ADO
AD1
Bridge Sensor
TJ(RISE) = PTOTAL x RθJA
TJ(RISE) = 152.7 milli-Watts x 336.0°C/Watt
TJ(RISE) = 51.3°C
2012-2013 Microchip Technology Inc.
FIGURE 6-2:
Using the MCP1703A as a
Voltage Reference.
DS20005122B-page 15
MCP1703A
6.5
Pulsed Load Applications
For some applications, there are pulsed load current
events that may exceed the specified 250 mA
maximum specification of the MCP1703A. The internal
current limit of the MCP1703A prevents high peak load
demands from causing non-recoverable damage. The
250 mA rating is a maximum average continuous
rating. As long as the average current does not exceed
250 mA, pulsed higher load currents can be applied to
the MCP1703A. The typical current limit for the
MCP1703A is 500 mA (TA = +25°C).
DS20005122B-page 16
2012-2013 Microchip Technology Inc.
MCP1703A
7.0
PACKAGING INFORMATION
7.1
Package Marking Information
3-Lead SOT-23A
Example:
Standard Options for SOT-23A
Symbol
Voltage*
Symbol
Voltage*
JGNN
JMNN
JFNN
JHNN
JNNN
1.2
1.5
1.8
2.5
2.8
JJNN
JKNN
JPNN
JLNN
—
3.0
3.3
4.0
5.0
—
JG25
* Custom output voltages available upon request. Contact your
local Microchip sales office for more information.
Example:
3-Lead SOT-89
Standard Options for SOT-89
Symbol
Voltage*
Symbol
Voltage*
PA
PF
MZ
PB
PG
1.2
1.5
1.8
2.5
2.8
PC
PD
PH
PE
—
3.0
3.3
4.0
5.0
—
PA1211
256
* Custom output voltages available upon request. Contact your
local Microchip sales office for more information.
Example:
3-Lead SOT-223
Standard Options for SOT-223
Symbol
Voltage*
Symbol
Voltage*
12
15
18
25
28
1.2
1.5
1.8
2.5
2.8
30
33
40
50
—
3.0
3.3
4.0
5.0
—
33
3.3
—
—
1703A
12E1211
256
Custom
* Custom output voltages available upon request. Contact your
local Microchip sales office for more information.
8-Lead DFN (2 x 3)
Example:
Standard Options for 8-Lead DFN (2 x 3)
Symbol
Voltage*
Symbol
Voltage*
ALQ
ALR
ALS
ALT
ALU
1.2
1.5
1.8
2.5
2.8
ALV
ALW
ALX
ALY
—
3.0
3.3
4.0
5.0
—
ALQ
211
25
* Custom output voltages available upon request. Contact your local
Microchip sales office for more information.
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will be carried over
to the next line, thus limiting the number of available characters for customer-specific
information.
2012-2013 Microchip Technology Inc.
DS20005122B-page 17
MCP1703A
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