MCP1799T-3302H/DB

MCP1799 80 mA High-Voltage Automotive LDO Features Description • AEC-Q100 with Grade 0 and PPAP Capable • Wide Input Voltage Range: 4.5V to 45V - Under Voltage Lock Out: 2.8V typical • Extended Working Temperature Range: -40°C to +150°C • Standard Output Regulated Voltages (VR): 3.3V and 5.0V - Tolerance ±2% • Low Quiescent Supply Current: 25 µA typical • Output Current Capability: 80 mA typical • Stable with 1 µF Ceramic Output Capacitor • Short Circuit Protection • Thermal Shutdown Protection: - +180°C typical - Hysteresis: 22°C typical • High PSRR: - 70 dB @ 1 kHz typical • Available in the Following Packages: - 3-Lead SOT-23 - 3-Lead SOT-223 The MCP1799 is a high-voltage, low-dropout (LDO) regulator, capable of generating 80 mA output current. The input voltage range of 4.5V to 45V makes it ideal in 12V to 36V power rails and in high-voltage battery packs. The MCP1799 comes in two standard fixed outputvoltage versions: 3.3V and 5.0V. The regulator output is stable with 1 µF ceramic capacitors. The device is protected from short circuit events by the current limit function and from over heating by means of thermal shutdown protection. The device itself has a low ground current of 45 µA typical, while delivering maximum output current of 80 mA. Without load the device consumes 25 µA typical. Applications • Automotive Electronics • Microcontroller Biasing • Cordless Power Tools, Home Appliances E-bikes, drones, etc. • Smoke Detectors and Other Alarm Sensors Typical Application VBAT = 12 to 36V 1 µF LOAD VOUT VIN CIN MCP1799 COUT 1 µF GND  2019 Microchip Technology Inc. DS20006248A-page 1 MCP1799 Package Types 3-Pin SOT-23 3-Pin SOT-223 VIN GND 4 3 1 2 GND VOUT  2019 Microchip Technology Inc. 1 VIN 2 3 GND VOUT DS20006248A-page 2 MCP1799 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † Input Voltage ..........................................................................................................................................................+66.0V Maximum Voltage on VIN ...................................................................................................... (GND - 0.3V) to (VIN+0.3V) Maximum Voltage on VOUT- ............................................................................................................(GND - 0.3V) to 5.5V Internal Power Dissipation .......................................................................... ............................Internally-Limited (Note 3) Output Short Circuit Current..........................................................................................................................Continuous Storage Temperature ............................................................................................................................. -55°C to +175°C Maximum Junction Temperature, TJ ..................................................................................................................... +185°C Operating Junction Temperature, TJ .......................................................................................................-40°C to +150°C ESD protection on all pins: HBM ....................................................................................................................................................................... ≥ 4 kV CDM ...................................................................................................................................................................... ≥ 750V MM .........................................................................................................................................................................≥ 400V † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. AC/DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, VIN = 6.2V(for VR =5V), VIN = 4.5V(for VR =3.3V), IOUT = 1 mA, CIN = COUT = 1.0 µF ceramic (X7R), TA = +25°C. Boldface type applies for ambient temperatures TA of -40°C to +150°C. Parameters Sym. Min. Typ. Max. 4.5 — 45 6.2 — 45 Units VR = 3.3V, IOUT ≤ 80 mA Input Operating Voltage VIN Input Voltage to Turn On Output VUVLO_High — 2.8 — Input Voltage to Turn Off Output VUVLO_Low — 2.6 — VOUT VR-2% VR VR+2% IQ — 25 45 µA IOUT = 0A Ground Current IGND — 45 110 µA IOUT = 80 mA Maximum Output Current IOUT 80 — — mA (Note 3) Line Regulation VOUT/ (VOUTxVIN) -0.05 ±0.02 +0.05 %/V 4.5V ≤ VIN ≤ 45V for VR = 3.3V 6.2V ≤ VIN ≤ 45V for VR = 5V Input Quiescent Current 3: 4: 5: 6: VR = 5V, IOUT ≤ 80 mA rising VIN, VIN = 0 to VIN(MIN) V Output Voltage Range Note 1: 2: V Conditions falling VIN, VIN = VIN(MIN) to 0 (Note 1) VR is the nominal regulator output voltage. Load regulation is measured at a constant ambient temperature using a DC current source. Load regulation is tested over a load range 1 mA to the maximum specified output current. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air. (i.e., TA, TJ, JA). See Section “Temperature Specifications” for more information. Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum +150°C rating. Sustained junction temperatures above +150°C might impact the device reliability. Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its nominal value that was measured with an input voltage of VIN = VR + 1.2V. PSRR measurement is carried out with CIN = 0 µF, VIN = 7V, IOUT = 50 mA, VINAC = 0.4Vpkpk Not production tested.  2019 Microchip Technology Inc. DS20006248A-page 3 MCP1799 AC/DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise noted, VIN = 6.2V(for VR =5V), VIN = 4.5V(for VR =3.3V), IOUT = 1 mA, CIN = COUT = 1.0 µF ceramic (X7R), TA = +25°C. Boldface type applies for ambient temperatures TA of -40°C to +150°C. Parameters Sym. Min. Typ. Max. Units VOUT/VOUT -0.8 ±0.4 +0.8 % Output Current Limit IOUT_CL — 150 215 mA Output Peak Current Limit IOUT_PCL 1700 2500 mA VIN = VIN(MIN), VOUT > 0.1V, (Note 6) mV IOUT = 80 mA (Note 4) Load Regulation Dropout Voltage VDROPOUT — 300 1100 eN — 500 — Conditions IOUT = 1 mA to 80 mA (Note 2) AC Performance Output Noise Power Supply Ripple Rejection Ratio Note 1: 2: 3: 4: 5: 6: f = 100 Hz to 100 kHz µVrms VIN = 12V, VR = 5V IOUT = 10 mA(Note 6) 70 PSRR — 70 35 f = 100 Hz (Note 5) (Note 6) — dB f = 1 kHz (Note 5) (Note 6) f = 100 kHz (Note 5) (Note 6) VR is the nominal regulator output voltage. Load regulation is measured at a constant ambient temperature using a DC current source. Load regulation is tested over a load range 1 mA to the maximum specified output current. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air. (i.e., TA, TJ, JA). See Section “Temperature Specifications” for more information. Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum +150°C rating. Sustained junction temperatures above +150°C might impact the device reliability. Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its nominal value that was measured with an input voltage of VIN = VR + 1.2V. PSRR measurement is carried out with CIN = 0 µF, VIN = 7V, IOUT = 50 mA, VINAC = 0.4Vpkpk Not production tested.  2019 Microchip Technology Inc. DS20006248A-page 4 MCP1799 TEMPERATURE SPECIFICATIONS Parameters Sym. Min. Typ. Max. Units Conditions Temperature Ranges Thermal Shutdown Thermal Shutdown Hysteresis TSD 180 °C Rising Temperature °C Falling Temperature TSD — 22 JA — 212 — JC — 139 — JA — 70 — JC — 60 — Thermal Package Resistances Thermal Resistance, SOT23-3LD Thermal Resistance, SOT223-3LD  2019 Microchip Technology Inc. °C/W JEDEC® standard 4 layer FR4 board with 1 oz. copper DS20006248A-page 5 MCP1799 2.0 Note: TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, CIN = COUT = 1 µF ceramic (X7R), IOUT = 1 mA, TA = +25°C, VIN = VR + 1.2V. FIGURE 2-1: Output Voltage vs. Input Voltage (VR = 3.3V). FIGURE 2-4: Output Voltage vs. Output Current (VR = 5.0V). FIGURE 2-2: Output Voltage vs. Input Voltage (VR = 5.0V). FIGURE 2-5: Current. 0.05 Dropout Voltage vs. Output IOUT = 1 mA to 80 mA Load Regulation (%) 0.00 VR = 3.3V VIN = 4.5V -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 -40 FIGURE 2-3: Output Voltage vs. Output Current (VR = 3.3V).  2019 Microchip Technology Inc. -15 10 35 60 85 110 Ambient Temperature (°C) 135 160 FIGURE 2-6: Load Regulation vs. Ambient Temperature (VR = 3.3V). DS20006248A-page 6 MCP1799 Note: Unless otherwise indicated, CIN = COUT = 1 µF ceramic (X7R), IOUT = 1 mA, TA = +25°C, VIN = VR + 1.2V. 0.05 IOUT = 1 mA to 80 mA VR = 5.0V VIN = 6.2V 0.00 Load Regulation (%) -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 -0.35 -40 -15 10 35 60 85 110 135 160 Ambient Temperature (°C) FIGURE 2-7: Load Regulation vs. Ambient Temperature (VR = 5.0V). FIGURE 2-10: Quiescent Current vs.Input Voltage (VR = 3.3V). FIGURE 2-8: Line Regulation vs. Ambient Temperature (VR = 3.3V). FIGURE 2-11: Quiescent Current vs.Input Voltage (VR = 5.0V). FIGURE 2-9: Line Regulation vs. Ambient Temperature (VR = 5.0V). FIGURE 2-12: Ground Current vs. Output Current (VR = 3.3V).  2019 Microchip Technology Inc. DS20006248A-page 7 MCP1799 PSRR (dB) Note: Unless otherwise indicated, CIN = COUT = 1 µF ceramic (X7R), IOUT = 1 mA, TA = +25°C, VIN = VR + 1.2V. FIGURE 2-13: Ground Current vs. Output Current (VR = 5.0V). 100.000 1.000 0.100 0.010 VIN [V] = 12 VOUT [V] = 3.3 load [mA] = 10 COUT [μF] = 1 Output Noise 10 Hz - 100 kHz [μVrms] = 295.78 0.001 0.01 0.1 1 10 100 1000 10000 Frequency (kHz) FIGURE 2-14: (VR = 3.3V). 100 1000 FIGURE 2-16: Power Supply Ripple Rejection Ratio vs. Frequency (VR = 3.3V). 0 VR = 5.0V -10 CIN = not used COUT = 1 μF -20 VIN = 7V + 0.4VPKPK -30 -40 -50 -60 -70 -80 -90 -100 0.01 0.1 1 10 Frequency (kHz) PSRR (dB) Noise μV/√Hz 10.000 0 VR = 3.3V -10 CIN = not used COUT = 1 μF -20 VIN = 7V + 0.4VPKPK -30 -40 -50 -60 -70 -80 -90 -100 0.01 0.1 1 10 Frequency (kHz) Noise vs. Frequency 100 1000 FIGURE 2-17: Power Supply Ripple Rejection Ratio vs. Frequency (VR = 5.0V). 100.000 Noise μV/√Hz 10.000 1.000 0.100 0.010 VIN [V] = 12 VOUT [V] = 5 load [mA] = 10 COUT [μF] = 1 Output Noise 10 Hz - 100 kHz [μVrms] = 444.13 0.001 0.01 0.1 1 10 100 1000 10000 Frequency (kHz) FIGURE 2-15: (VR = 5.0V). Noise vs. Frequency  2019 Microchip Technology Inc. DS20006248A-page 8 MCP1799 Note: Unless otherwise indicated, CIN = COUT = 1 µF ceramic (X7R), IOUT = 1 mA, TA = +25°C, VIN = VR + 1.2V. IOUT = 10 mA VOUT 50 mV/div, BW = 20 MHz 3.3V DC Offset VOUT 50 mV/div, BW = 20 MHz 5V DC Offset Step from 6.2V to 14V Step from 1 mA to 80 mA Rise and Fall Slope = 1V/µs IOUT 50 mA/div 40 µs/div FIGURE 2-18: (VR = 3.3V). Load Step Response VIN 5V/div, BW = 20 MHz 6.2V DC Offset FIGURE 2-21: (VR = 5.0V). 40 µs/div Line Step Response 14V VOUT 50 mV/div, BW = 20 MHz 5V DC Offset Rise Slope = 1V/µs VIN 5V/div Step from 1 mA to 80 mA IOUT 50 mA/div VOUT 1V/Div 200 µs/div 40 µs/div FIGURE 2-19: (VR = 5.0V). IOUT = 10 mA Load Step Response FIGURE 2-22: IOUT = 10 mA Start-up (VR = 3.3V). 14V IOUT = 10 mA Rise Slope = 1V/µs VOUT 50 mV/div, BW = 20 MHz 3.3V DC Offset Step from 4.5V to 14V VIN 5V/div Rise and Fall Slope = 1V/µs VOUT 1V/Div VIN 5V/div, BW = 20 MHz 4.5V DC Offset FIGURE 2-20: (VR = 3.3V). 200 µs/div 40 µs/div Line Step Response  2019 Microchip Technology Inc. FIGURE 2-23: Start-up (VR = 5.0V). DS20006248A-page 9 MCP1799 Note: Unless otherwise indicated, CIN = COUT = 1 µF ceramic (X7R), IOUT = 1 mA, TA = +25°C, VIN = VR + 1.2V. IOUT = 10 mA IOUT = 10 mA 45V 45V Rise Slope = 1V/µs Rise Slope = 1V/µs VIN 10V/div VIN 10V/div VOUT 1V/div FIGURE 2-24: 200 µs/div Start-up (VR = 3.3V).  2019 Microchip Technology Inc. VOUT 1V/div FIGURE 2-25: 200 µs/div Start-up (VR = 5V). DS20006248A-page 10 MCP1799 3.0 PIN DESCRIPTION The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE SOT 23-3 SOT 223-3 Symbol 1 2 GND Ground 2 3 VOUT Regulated Output Voltage VR 3 1 VIN Input Voltage Supply — 4 TAB Exposed Thermal Pad, connected internally to GND 3.1 Ground Pin (GND) For optimal noise and Power Supply Rejection Ratio (PSRR) performance, the GND pin of the LDO should be tied to an electrically “quiet” circuit ground. This will ensure the LDO power supply rejection ratio and noise device performance. The GND pin of the LDO conducts only ground current, so a wide trace is not required. For applications that have switching or noisy inputs, tie the GND pin to the return of the output capacitor. Ground planes help lower the inductance and as a result, reduce the effect of fast current transients. 3.2 Description 3.3 Input Voltage Supply Pin (VIN) Connects the voltage source to VIN. If the input voltage source is located several inches away from the LDO, or the input source is a battery, it is recommended that an input capacitor be used. A typical input capacitance value of 1 µF to 10 µF should be sufficient for most applications. The type of capacitor used is ceramic. However, the low ESR characteristics of the ceramic capacitor will yield better noise and PSRR performance at high frequency. Regulated Output Voltage Pin (VOUT) The VOUT pin is the regulated output voltage VR of the LDO. A minimum output capacitance of 1 µF is required for the LDO to ensure the stability in all the typical applications. The MCP1799 is stable with ceramic capacitors. See Section 4.2, Output Capacitance Requirements for output capacitor selection guidance.  2019 Microchip Technology Inc. DS20006248A-page 11 MCP1799 4.0 DETAILED DESCRIPTION 4.1 Device Overview The MCP1799 is an AEC-Q100 qualified LDO, capable of delivering 80 mA of current, over the entire operating temperature range. The part is stable with a minimum 1 µF output ceramic capacitor, has current limit protection and extended working temperature range: -40° to +150°. The device also features a PSRR of 70 dB typical for 100 Hz frequency. FIGURE 4-1: 4.2 Simplified Functional Block Diagram. Output Capacitance Requirements The MCP1799 requires a minimum output capacitance of 1 µF for output voltage stability. The output capacitor should be located as close to the LDO output as it is practical. The device is designed to work with low ESR ceramic capacitors. Ceramic materials X8R\L or X7R have low temperature coefficients and are well within the acceptable ESR range required. A typical 1 µF X7R 0805 capacitor has an ESR of 50 m. It is recommended to use an appropriate voltage rating capacitor, and the derating of the capacitance as a function of voltage and temperature needs to be taken into account. For improved transitory behavior over the entire temperature range, a 2.2 µF output capacitor is recommended. The ceramic capacitor type should be X7R or X8R/L because their dielectrics are rated for use with temperatures between -40°C to +125° or -55°C to +150°C, respectively.  2019 Microchip Technology Inc. 4.3 Input Capacitance Requirements Low input-source impedance is necessary for the LDO output to operate properly. When operating from batteries, or in applications with long lead length (>10 inches) between the input source and the LDO, adding input capacitance is recommended. A minimum of 1 µF to 10 µF of capacitance is sufficient for most applications. Given the high input voltage capability of the MCP1799, of up to 45V DC, it is recommended to use an appropriate voltage rating capacitor, and the derating of the capacitance as a function of voltage and temperature needs to be taken into account. The ceramic capacitor type should be X7R or X8R\L because their dielectrics are rated for use with temperatures between -40°C to +125°C or -55°C to +150°C, respectively. DS20006248A-page 12 MCP1799 4.4 Circuit Protection The MCP1799 features current limit protection during an output short circuit event that occurs in normal operation. The MCP1799 was tested using the AEC-Q100 test set-up in Figure 4-2. The testing conditions require the use of very high parasitic inductances on the input and output. For cases like this, it is required to prevent the output voltage going below ground with more than 1V. Note that the VOUT pin can withstand a maximum of -0.3VDC (see Absolute Maximum Ratings †). This can be achieved by placing a Schottky diode with the cathode to VOUT and anode to ground. Thermal shutdown functionality is present on the device and adds to the protection features of the part. Thermal shutdown gets triggered at typical value of +180°C and has a typical hysteresis of 22°C. Lshort = 5 µH Lshort = 5 µH VOUT VIN Ideal Supply Rshort = 10 mΩ CIN 1 µF ON COUT MCP1799 Rshort = 100 mΩ 1 µF 100V 50V OFF GND GND FIGURE 4-2: 4.5 GND Short Circuit Test Set-Up. Dropout Operation 4.6 Input UVLO For VR = 5V, MCP1799 can be found operating in a dropout condition (the minimum input voltage is 4.5V), which can happen during a cold crank event, when the supply voltage can drop down to 3V. It is preferred to make sure that the part does not operate in dropout during DC operation so that the AC performance is maintained. On the rising edge of the VIN input, the internal architecture adds 550 µs delay before allowing the regulator output to turn on. After this 550 µs delay, the regulator starts charging the load capacitor as the output rises from 0V to its regulated value. The charging current amplitude will be limited by the short circuit current value of the device. The device has a dropout voltage of approximately 300 mV at full load and room temperature, but because of the extended temperature range at +150°C, due to increased leakage at hot, it reaches up to 1100 mV. For a 5V output, the minimum supply voltage required in order to have a regulated output, within specification, is 6.2V. The UVLO block helps prevent false start-ups, during the power-up sequence, until the input voltage reaches a value of 2.8V. The minimum input voltage required for normal operation is 4.5V. IOUT = 10 mA 11V VR = 5V VIN 2V/div 4.7 Package and Device Qualifications The MCP1799 are AEC-Q100, grade 0 and PPAP capable. The Grade 0 qualification allows the MCP1799 to be used within an extended temperature range, from -40°C to +150°C. 3V VOUT 2V/div FIGURE 4-3: 200 ms/div Line Step from Dropout.  2019 Microchip Technology Inc. DS20006248A-page 13 MCP1799 5.0 APPLICATION INFORMATION 5.1 Typical Application The MCP1799 is used for applications that require high input voltage and are prone to high transient voltages on the input. VBAT = 4.5V to 45V 1 µF µController VOUT VIN CIN COUT MCP1799 1 µF 0V DC V DC GND FIGURE 5-1: 5.2 Typical Application Circuit using a High Voltage Battery Pack. Power Calculations 5.2.1 POWER DISSIPATION The internal power dissipation within the MCP1799 is a function of input voltage, output voltage, output current and quiescent current. Equation 5-1 can be used to calculate the internal power dissipation for the LDO. EQUATION 5-1: P LDO =  VIN  MAX  – V OUT  MIN    I OUT  MAX  Where: PLDO = Internal power dissipation of the LDO pass device VIN(MAX) = Maximum input voltage VOUT(MIN) = LDO minimum output voltage IOUT(MAX) = Maximum output current In addition to the LDO pass element power dissipation, there is power dissipation within the MCP1799 as a result of quiescent or ground current. The power dissipation, as a result of the ground current, can be calculated by applying Equation 5-2: EQUATION 5-2: PI  GND  = V IN  MAX   I GND Where: PI(GND) = Power dissipation due to the ground current of the LDO VIN(MAX) = Maximum input voltage IGND = Current flowing into the GND pin  2019 Microchip Technology Inc. The total power dissipated within the MCP1799 is the sum of the power dissipated in the LDO pass device and the P(IGND) term. Because of the CMOS construction, the typical IGND for the MCP1799 is typical 50 µA at full load. Operating at a maximum VIN of 45V results in a power dissipation of 2.25 mW. For most applications, this is small compared to the LDO pass device power dissipation, and can be neglected. The maximum continuous operating junction temperature specified for the MCP1799 is +150°C. To estimate the internal junction temperature of the MCP1799, the total internal power dissipation is multiplied by the thermal resistance from junction-toambient (RJA) of the device. For example, the thermal resistance from junction-to-ambient for the 3-Lead SOT-223 package is estimated at 70°C/W. EQUATION 5-3: T J  MAX  = PLDO   JA + T A  MAX  Where: TJ(MAX) = Maximum continuous junction temperature PLDO = Total power dissipation of the device JA = Thermal resistance from junction-toambient TA(MAX) = Maximum ambient temperature The maximum power dissipation capability for a package can be calculated given the junction-to-ambient thermal resistance and the maximum ambient temperature for the application. Equation 5-4 can be used to determine the package maximum internal power dissipation. DS20006248A-page 14 MCP1799 EQUATION 5-4: P D  MAX   T J  MAX  – T A  MAX   = ---------------------------------------------------  JA Where: IOUT = 50 mA Maximum Ambient Temperature TA(MAX) = +60°C Internal Power Dissipation PD(MAX) = Maximum power dissipation of the device PLDO(MAX) = (VIN(MAX) – VOUT(MIN)) x IOUT(MAX) PLDO = (14.7 – 4.9) x 50 mA TJ(MAX) = Maximum continuous junction temperature TA(MAX) = Maximum ambient temperature JA = Thermal resistance from junction-to-ambient EQUATION 5-5: T J  RISE  = P D  MAX    JA Where: TJ(RISE) = Rise in the device junction temperature over the ambient temperature PD(MAX) = Maximum power dissipation of the device JA = Thermal resistance from junction-toambient PLDO = 0.49 Watts 5.3.1.1 Device Junction Temperature Rise The internal junction temperature rise is a function of internal power dissipation and of the thermal resistance from junction-to-ambient for the application. The thermal resistance from junction-to-ambient (JA) is derived from EIA/JEDEC standards for measuring thermal resistance. The EIA/JEDEC specification is JESD51. The standard describes the test method and board specifications for measuring the thermal resistance from junction-to-ambient. The actual thermal resistance for a particular application can vary depending on many factors such as copper area and thickness. Refer to Application Note AN792, “A Method to Determine How Much Power a SOT23 Can Dissipate in an Application” (DS00792), for more information regarding this subject. EXAMPLE 5-2: EQUATION 5-6: T J = T J  RISE  + T A TJ = Junction temperature TJ(RISE) = Rise in the device junction temperature over the ambient temperature TA = Ambient temperature Typical Application Examples Internal power dissipation, junction temperature rise, junction temperature and maximum power dissipation are calculated in the following example. The power dissipation as a result of ground current is small enough to be neglected. 5.3.1 TJ(RISE) = 0.49W x 70°C/W TJ(RISE) = 34.3°C Where: 5.3 TJ(RISE) = PLDO(Max) x JA POWER DISSIPATION EXAMPLE EXAMPLE 5-1: Package Package Type = 3 Lead SOT223 Input Voltage 5.3.1.2 Junction Temperature Estimate To estimate the internal junction temperature, the calculated temperature rise is added to the ambient or offset temperature. For this example, the worst-case junction temperature is estimated below: EXAMPLE 5-3: TJ = TJ(RISE) + TA(MAX) TJ = 34.3°C + 60.0°C TJ = 94.3°C 5.3.1.3 Maximum Package Power Dissipation at +60°C Ambient Temperature EXAMPLE 5-4: 3Lead SOT223 (JA = 70°C/W): PD(MAX) = (150°C - 60°C)/70°C/W PD(MAX) = 1.28W VIN = 14V ± 5% LDO Output Voltage and Current VOUT = 5V  2019 Microchip Technology Inc. DS20006248A-page 15 MCP1799 6.0 BATTERY PACK APPLICATION The features of the MCP1799 make it a candidate for use in smart battery packs. The high input voltage range of up to 45V and the transient voltage capability makes it ideal for powering low power microcontrollers used for monitoring battery health. Power Disconnect +VBAT Current Sense VBAT_1 VBAT_2 µController MCP1799 VBAT_n-1 Network Voltage Sense VBAT_n -VBAT FIGURE 6-1: Smart Battery Pack Application Example.  2019 Microchip Technology Inc. DS20006248A-page 16 MCP1799 7.0 PACKAGING INFORMATION 7.1 Package Marking Information 3-Lead SOT-23 Example Part Number ;;;111 Code MCP1799T-3302H/TT 330256 MCP1799T-5002H/TT 500256 330256 3-Lead SOT-223 Example ;;;;;;; MCP1799 3301932 256 ;;;627@ 1RWH )RUWKHPRVWFXUUHQWSDFNDJHGUDZLQJVSOHDVHVHHWKH0LFURFKLS3DFNDJLQJ6SHFLILFDWLRQORFDWHGDW KWWSZZZPLFURFKLSFRPSDFNDJLQJ D b2 E1 E 3 2 1 e e1 A2 A b c φ L A1 8QLWV 'LPHQVLRQ/LPLWV 1XPEHURI/HDGV 0,//,0(7(56 0,1 120 0$; 1  /HDG3LWFK H %6& 2XWVLGH/HDG3LWFK H 2YHUDOO+HLJKW $ ± ±  6WDQGRII $  ±  0ROGHG3DFNDJH+HLJKW $    2YHUDOO:LGWK (    0ROGHG3DFNDJH:LGWK (    2YHUDOO/HQJWK '    /HDG7KLFNQHVV F    /HDG:LGWK E    7DE/HDG:LGWK E    )RRW/HQJWK /  ± ± /HDG$QJOH  ƒ ± ƒ %6& 1RWHV  'LPHQVLRQV'DQG(GRQRWLQFOXGHPROGIODVKRUSURWUXVLRQV0ROGIODVKRUSURWUXVLRQVVKDOOQRWH[FHHGPPSHUVLGH  'LPHQVLRQLQJDQGWROHUDQFLQJSHU$60(