MCP6231/1R/1U/2/4
20 µA, 300 kHz Rail-to-Rail Op Amp
Features
Description
•
•
•
•
•
•
The Microchip Technology Inc. MCP6231/1R/1U/2/4
operational amplifiers (op amps) provide wide bandwidth
for the quiescent current. The MCP6231/1R/1U/2/4
family has a 300 kHz gain bandwidth product and 65°C
(typical) phase margin. This family operates from a
single supply voltage as low as 1.8V, while drawing
20 µA (typical) quiescent current. In addition, the
MCP6231/1R/1U/2/4 family supports rail-to-rail input
and output swing, with a Common-mode input voltage
range of VDD + 300 mV to VSS – 300 mV. These op amps
are designed in one of Microchip’s advanced CMOS
processes.
Gain Bandwidth Product: 300 kHz (typical)
Supply Current: IQ = 20 µA (typical)
Supply Voltage: 1.8V to 6.0V
Rail-to-Rail Input/Output
Extended Temperature Range: -40°C to +125°C
Available in 5-Pin SC70 and SOT-23 packages
Applications
•
•
•
•
•
•
Automotive
Portable Equipment
Transimpedance Amplifiers
Analog Filters
Notebooks and PDAs
Battery-Powered Systems
Package Types
SOT-23-5
5 VDD
VOUT 1
Design Aids
•
•
•
•
•
•
2
SPICE Macro Models
FilterLab® Software
Mindi™ Circuit Designer and Simulator
Microchip Advanced Part Selector (MAPS)
Analog Demonstration and Evaluation Boards
Application Notes
+ –
VIN+ 3
4 VIN-
MCP6231R
SOT-23-5
VOUT 1
VDD 2
RG2
–
7 VDD
VIN+ 3
+
6 VOUT
VSS 4
5 NC
MCP6232
MSOP, PDIP, SOIC
VOUTA 1
4 VIN-
VINA+ 3
8 VDD
VINA- 2
MCP6231U
SC70-5, SOT-23-5
RG1
VIN1
+
RZ
+
VSS 2
–
VIN- 3
–
MCP6231
5 VDD
VIN+ 1
RF
RX
8 NC
7 VOUTB
–+
+–
VSS 4
VIN2
VDD
NC 1
VIN- 2
5 VSS
+ –
VIN+ 3
Typical Application
RY
MCP6231
MSOP, PDIP, SOIC
MCP6231
VOUT
MCP6231
DFN*
NC 1
VIN- 2
VIN+ 3
Summing Amplifier Circuit
4 VOUT
VSS 4
EP
9
6 VINB5 VINB+
MCP6232
2x3 TDFN*
VOUTA 1
VINA- 2
VINA+ 3
VSS 4
8 VDD
EP
9
7 VOUTB
6 VINB5 VINB+
MCP6234
PDIP, SOIC, TSSOP
8 NC
VOUTA 1
7 VDD
VINA- 2
- + + - 13 VIND-
VINA+ 3
12 VIND+
6 VOUT
5 NC
VDD 4
14 VOUTD
11 VSS
VINB+ 5
10 VINC+
VINB- 6
VOUTB 7
-+ + - 9 V INC
8 VOUTC
* Includes Exposed Thermal Pad (EP); see Table 3-1.
2004-2020 Microchip Technology Inc.
DS20001881G-page 1
MCP6231/1R/1U/2/4
NOTES:
DS20001881G-page 2
2004-2020 Microchip Technology Inc.
MCP6231/1R/1U/2/4
1.0
ELECTRICAL
CHARACTERISTICS
VDD – VSS ........................................................................7.0V
† Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
Current at Analog Input Pins (VIN+, VIN-)......................±2 mA
†† See Section 4.1.2 “Input Voltage and Current Limits”.
Absolute Maximum Ratings†
Analog Inputs (VIN+, VIN-)†† .......... VSS – 1.0V to VDD + 1.0V
All Other Inputs and Outputs ......... VSS – 0.3V to VDD + 0.3V
Difference Input Voltage ...................................... |VDD – VSS|
Output Short-Circuit Current ................................ Continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature ....................................-65°C to +150°C
Maximum Junction Temperature (TJ)......................... .+150°C
ESD Protection on All Pins (HBM; MM) 4 kV; 300V
DC ELECTRICAL CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2,
RL = 100 kto VDD/2 and VOUT VDD/2.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Offset Voltage
VOS
-5.0
—
+5.0
mV
VCM = VSS
Extended Temperature
VOS
-7.0
—
+7.0
mV
TA = -40°C to +125°C,
VCM = VSS (Note 1)
VOS/TA
—
±3.0
—
µV/°C
TA= -40°C to +125°C,
VCM = VSS
PSRR
—
83
—
dB
Input Bias Current:
IB
—
±1.0
—
pA
At Temperature
IB
—
20
—
pA
TA = +85°C
TA = +125°C
Input Offset
Input Offset Drift with Temperature
Power Supply Rejection Ratio
VCM = VSS
Input Bias Current and Impedance
IB
—
1100
—
pA
Input Offset Current
IOS
—
±1.0
—
pA
Common-Mode Input Impedance
ZCM
—
1013||6
—
||pF
Differential Input Impedance
ZDIFF
—
1013||3
—
||pF
Common-Mode Input Range
VCMR
VSS –0.3
—
VDD + 0.3
V
Common-Mode Rejection Ratio
CMRR
61
75
—
dB
VCM = -0.3V to 5.3V,
VDD = 5V
AOL
90
110
—
dB
VOUT = 0.3V to VDD – 0.3V,
VCM = VSS
VOL, VOH
VSS + 35
—
VDD – 35
mV
RL =10 k0.5V Input
Overdrive
ISC
—
±6
—
mA
VDD = 1.8V
ISC
—
±23
—
mA
VDD = 5.5V
VDD
1.8
—
6.0
V
IQ
10
20
30
µA
At Temperature
Common-Mode
Open-Loop Gain
DC Open-Loop Gain (large signal)
Output
Maximum Output Voltage Swing
Output Short-Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
Note 1:
2:
IO = 0, VCM = VDD – 0.5V
The SC70 package is only tested at +25°C.
All parts with date codes of February 2007 and later have been screened to ensure operation at VDD = 6.0V. However,
the other minimum and maximum specifications are measured at 1.8V and 5.5V.
2004-2020 Microchip Technology Inc.
DS20001881G-page 3
MCP6231/1R/1U/2/4
AC ELECTRICAL CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8 to 5.5V, VSS = GND, VCM = VDD/2,
VOUT VDD/2, RL = 100 k to VDD/2 and CL = 60 pF.
Parameters
Sym
Min
Typ
Max
Units
Conditions
GBWP
—
300
—
kHz
Phase Margin
PM
—
65
—
°
Slew Rate
SR
—
0.15
—
V/µs
Input Noise Voltage
Eni
—
6.0
—
µVP-P
Input Noise Voltage Density
eni
—
52
—
nV/Hz
f = 1 kHz
Input Noise Current Density
ini
—
0.6
—
fA/Hz
f = 1 kHz
AC Response
Gain Bandwidth Product
G = +1 V/V
Noise
f = 0.1 Hz to 10 Hz
TEMPERATURE CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, VDD = +1.8V to +5.5V and VSS = GND.
Parameters
Sym
Min
Typ
Max
Units
Extended Temperature Range
TA
-40
—
+125
°C
Operating Temperature Range
TA
-40
—
+125
°C
Storage Temperature Range
TA
-65
—
+150
°C
Conditions
Temperature Ranges
Note 1
Thermal Package Resistances
Thermal Resistance, 5L-SC70
JA
—
331
—
°C/W
Thermal Resistance, 5L-SOT-23
JA
—
256
—
°C/W
Thermal Resistance, 8L-DFN
JA
—
84.5
—
°C/W
Thermal Resistance, 8L-MSOP
JA
—
206
—
°C/W
Thermal Resistance, 8L-TDFN
JA
—
41
—
°C/W
Thermal Resistance, 8L-PDIP
JA
—
85
—
°C/W
Thermal Resistance, 8L-SOIC
JA
—
163
—
°C/W
Thermal Resistance, 14L-PDIP
JA
—
70
—
°C/W
Thermal Resistance, 14L-SOIC
JA
—
120
—
°C/W
Thermal Resistance, 14L-TSSOP
JA
—
100
—
°C/W
Note 1:
The internal Junction Temperature (TJ) must not exceed the absolute maximum specification of +150°C.
DS20001881G-page 4
2004-2020 Microchip Technology Inc.
MCP6231/1R/1U/2/4
1.1
Test Circuits
The test circuits used for the DC and AC tests are shown in Figure 1-1 and Figure 1-2. The bypass capacitors are laid
out according to the rules discussed in Section 4.6 “PCB Surface Leakage”.
VDD
VIN
RN
0.1 µF
VOUT
MCP623X
CL
RN
RL
RF
VL
FIGURE 1-1:
AC and DC Test Circuit for
Most Noninverting Gain Conditions.
2004-2020 Microchip Technology Inc.
VDD
VDD/2
+
–
VDD/2 RG
1 µF
0.1 µF
+
VOUT
MCP623X
CL
–
VIN
RG
1 µF
RL
RF
VL
FIGURE 1-2:
AC and DC Test Circuit for
Most Inverting Gain Conditions.
DS20001881G-page 5
MCP6231/1R/1U/2/4
NOTES:
DS20001881G-page 6
2004-2020 Microchip Technology Inc.
MCP6231/1R/1U/2/4
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
20%
18%
16%
14%
12%
10%
8%
6%
4%
2%
0%
90
CMRR, PSRR (dB)
630 Samples
VCM = VSS
85
PSRR (VCM = VSS)
80
75
CMRR (VCM = -0.3V to +5.3V,
VDD = 5.0V)
-25
0
25
50
75
Ambient Temperature (°C)
Input Offset Voltage (mV)
FIGURE 2-4:
Temperature.
100
120
30
1.E+01
1.E+02
10
1.E+03
100
1.E+04
1k
100k
Frequency (Hz)
PSRR, CMRR vs.
-120
20
-150
0
-180
30%
25%
20%
15%
10%
5%
0%
Input Bias Current (pA)
FIGURE 2-3:
Input Bias Current at +85°C.
2004-2020 Microchip Technology Inc.
Open-Loop Gain, Phase vs.
632 Samples
VCM = VDD/2
TA = +125°C
0.0
Percentage of Occurrences
42
36
30
24
18
12
40
FIGURE 2-5:
Frequency.
630 Samples
VCM = VDD/2
TA = +85°C
6
20%
18%
16%
14%
12%
10%
8%
6%
4%
2%
0%
0
Percentage of Occurrences
FIGURE 2-2:
Frequency.
-90
-20
-210
0.1 1.E+
1 1.E+
10 1.E+
100 1.E+
1k 1.E+
10k 100k
1M 1.E+
10M
1.E1.E+ 1.E+
01 00 01 Frequency
02 03 (Hz)
04 05 06 07
1.E+05
10k
-60
Phase
0.6
20
-30
2.0
40
0
1.8
PSRR+
50
60
0.4
60
80
1.6
CMRR
Gain
0.2
70
RL = 10 kΩ
VCM = VDD/2
1.0
80
100
0.8
PSRR-
Open-Loop Gain (dB)
PSRR, CMRR (dB)
90
125
CMRR, PSRR vs. Ambient
1.4
Input Offset Voltage.
1.2
FIGURE 2-1:
100
Open-Loop Phase (°)
-50
5
4
3
2
1
0
-1
-2
-3
-4
70
-5
Percentage of Occurrences
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2,
RL = 100 kto VDD/2 and CL = 60 pF.
Input Bias Current (nA)
FIGURE 2-6:
Input Bias Current at +125°C.
DS20001881G-page 7
MCP6231/1R/1U/2/4
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2,
RL = 100 kto VDD/2 and CL = 60 pF.
FIGURE 2-7:
vs. Frequency.
VDD = 1.8V
TA = -40°C
TA = +25°C
TA = +85°C
TA = +125°C
450
350
250
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
-0.4
150
FIGURE 2-10:
50
0
-50
-100
-150
Common Mode Input Voltage (V)
FIGURE 2-9:
Input Offset Voltage vs.
Common-Mode Input Voltage at VDD = 5.5V.
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-0.5
-200
DS20001881G-page 8
12
10
8
6
4
2
0
-50
-100
VDD = 5.5V
-150
-200
VDD = 1.8V
-250
-300
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Output Short-Circuit Current
(mA)
TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
100
0
VCM = VSS
50
FIGURE 2-11:
Output Voltage.
VDD = 5.5 V
150
-2
Input Offset Voltage Drift.
Output Voltage (V)
FIGURE 2-8:
Input Offset Voltage vs.
Common-Mode Input Voltage at VDD = 1.8V.
200
-4
Input Offset Voltage Drift (µV/°C)
Common Mode Input Voltage (V)
Input Offset Voltage (µV)
-6
-8
-10
628 Samples
VCM = VSS
TA = -40°C to +125°C
100
550
Input Offset Voltage (µV)
Input Noise Voltage Density
20%
18%
16%
14%
12%
10%
8%
6%
4%
2%
0%
-12
10
0.1 1.E+0
1
10
100 1.E+0
1k
10k 1.E+0
100k
1.E-01
1.E+0
1.E+0
1.E+0
0
1Frequency
2 (Hz)3
4
5
Percentage of Occurrences
100
Input Offset Voltage (µV)
Input Noise Voltage Density
(nV/Hz)
1,000
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
Input Offset Voltage vs.
+ISC
TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
-ISC
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power Supply Voltage (V)
FIGURE 2-12:
Output Short-Circuit Current
vs. Ambient Temperature.
2004-2020 Microchip Technology Inc.
MCP6231/1R/1U/2/4
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2,
RL = 100 kto VDD/2 and CL = 60 pF.
VDD = 5.5V
0.25
Falling Edge
0.20
0.15
0.10
Rising Edge
VDD = 1.8V
0.05
-50
-25
0
25
50
75
100
Ambient Temperature (°C)
FIGURE 2-13:
Temperature.
125
Slew Rate vs. Ambient
Time (2 µs/div)
FIGURE 2-16:
Pulse Response.
1,000
VDD = 5.0V
G = +1 V/V
4.5
100
VDD – VOH
VOL – VSS
10
1
10µ
1.E-02
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
100µ
1m
1.E-01
1.E+00
Output Current Magnitude (A)
10m
1.E+01
0.0
Time (20 µs/div)
FIGURE 2-14:
Output Voltage Headroom vs.
Output Current Magnitude.
FIGURE 2-17:
Pulse Response.
30
10
VDD = 5.5V
1
Quiescent Current
per Amplifier (µA)
Max. Output Voltage Swing
(VP-P )
Small-Signal, Noninverting
5.0
Output Voltage (V)
Output Voltage Headroom
(mV)
G = +1 V/V
RL = 10 kΩ
Output Voltage (10 mV/div)
Slew Rate (V/µs)
0.30
VDD = 1.8V
0.1
1k
1.E+03
Large-Signal, Noninverting
VCM = 0.9VDD
25
20
15
10
5
TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
0
10k
100k
1.E+04
1.E+05
Frequency (Hz)
1M
1.E+06
FIGURE 2-15:
Maximum Output Voltage
Swing vs. Frequency.
2004-2020 Microchip Technology Inc.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power Supply Voltage (V)
FIGURE 2-18:
Quiescent Current vs.
Power Supply Voltage.
DS20001881G-page 9
MCP6231/1R/1U/2/4
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2,
RL = 100 kto VDD/2 and CL = 60 pF.
6.0
+125°C
+85°C
+25°C
-40°C
-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
Input Voltage (V)
FIGURE 2-19:
Measured Input Current vs.
Input Voltage (below VSS).
DS20001881G-page 10
Input, Output Voltages (V)
Input Current Magnitude (A)
1.E-02
10m
1.E-03
1m
1.E-04
100µ
1.E-05
10µ
1.E-06
1µ
100n
1.E-07
10n
1.E-08
1n
1.E-09
100p
1.E-10
10p
1.E-11
1p
1.E-12
VOUT
5.0
4.0
VDD = 5.0V
G = +2 V/V
VIN
3.0
2.0
1.0
0.0
-1.0
Time (1 ms/div)
FIGURE 2-20:
The MCP6231/1R/1U/2/4
Show No Phase Reversal.
2004-2020 Microchip Technology Inc.
MCP6231/1R/1U/2/4
3.0
PIN DESCRIPTIONS
Descriptions of the pins are listed in Table 3-1 (single op amps) and Table 3-2 (dual and quad op amps).
TABLE 3-1:
PIN FUNCTION TABLE FOR SINGLE OP AMPS
MCP6231
MCP6231R
MCP6231U
DFN, MSOP,
PDIP, SOIC
SOT-23-5
SOT-23-5
SOT-23-5
SC70
Symbol
6
1
1
4
VOUT
Analog Output
2
4
4
3
VIN-
Inverting Input
3
3
3
1
VIN+
Noninverting Input
7
5
2
5
VDD
Positive Power Supply
4
2
5
2
VSS
Negative Power Supply
1, 5, 8
—
—
—
NC
No Internal Connection
9
—
—
—
EP
Exposed Thermal Pad (EP); must be
connected to VSS.
TABLE 3-2:
Description
PIN FUNCTION TABLE FOR DUAL AND QUAD OP AMPS
MCP6232
MCP6234
MSOP, PDIP,
SOIC, TDFN
PDIP, SOIC, TSSOP
1
1
VOUTA
Analog Output (Op Amp A)
2
2
VINA-
Inverting Input (Op Amp A)
3
3
VINA+
Noninverting Input (Op Amp A)
8
4
VDD
5
5
VINB+
Noninverting Input (Op Amp B)
Symbol
Description
Positive Power Supply
6
6
VINB-
Inverting Input (Op Amp B)
7
7
VOUTB
Analog Output (Op Amp B)
—
8
VOUTC
Analog Output (Op Amp C)
Inverting Input (Op Amp C)
—
9
VINC-
—
10
VINC+
4
11
VSS
Noninverting Input (Op Amp C)
Negative Power Supply
—
12
VIND+
Noninverting Input (Op Amp D)
—
13
VIND-
Inverting Input (Op Amp D)
—
14
VOUTD
Analog Output (Op Amp D)
9
—
—
2004-2020 Microchip Technology Inc.
Exposed Thermal Pad (EP); must be connected to VSS.
DS20001881G-page 11
MCP6231/1R/1U/2/4
3.1
Analog Outputs
The output pins are low-impedance voltage sources.
3.2
Analog Inputs
The noninverting and inverting inputs are
high-impedance CMOS inputs with low bias currents.
3.3
3.4
Exposed Thermal Pad (EP)
There is an internal electrical connection between the
Exposed Thermal Pad (EP) and the VSS pin; they must
be connected to the same potential on the Printed
Circuit Board (PCB).
Power Supply (VSS and VDD)
The positive power supply (VDD) is 1.8V to 6.0V higher
than the negative power supply (VSS). For normal
operation, the other pins are between VSS and VDD.
Typically, these parts are used in a single (positive)
supply configuration. In this case, VSS is connected to
ground and VDD is connected to the supply. VDD will
need bypass capacitors.
DS20001881G-page 12
2004-2020 Microchip Technology Inc.
MCP6231/1R/1U/2/4
4.0
APPLICATION INFORMATION
The MCP6231/1R/1U/2/4 family of op amps is
manufactured using Microchip’s state-of-the-art CMOS
process and is specifically designed for low-cost,
low-power and general purpose applications. The low
supply voltage, low quiescent current and wide
bandwidth makes the MCP6231/1R/1U/2/4 ideal for
battery-powered applications.
4.1
Rail-to-Rail Inputs
4.1.1
The MCP6231/1R/1U/2/4 op amp is designed to
prevent phase reversal when the input pins exceed the
supply voltages. Figure 4-1 shows the input voltage
exceeding the supply voltage without any phase
reversal.
Input, Output Voltages (V)
VOUT
5.0
4.0
VIN+ Bond
Pad
Bond V IN
Pad
Input
Stage
VSS Bond
Pad
PHASE REVERSAL
6.0
VDD Bond
Pad
VDD = 5.0V
G = +2 V/V
VIN
3.0
2.0
1.0
0.0
FIGURE 4-2:
Structures.
Simplified Analog Input ESD
In order to prevent damage and/or improper operation
of these op amps, the circuit they are in must limit the
currents and voltages at the VIN+ and VIN- pins (see
Absolute Maximum Ratings† at the beginning of
Section 1.0 “Electrical Characteristics”). Figure 4-3
shows the recommended approach to protecting these
inputs. The internal ESD diodes prevent the input pins
(VIN+ and VIN-) from going too far below ground and
the resistors, R1 and R2, limit the possible current
drawn out of the input pins. Diodes D1 and D2 prevent
the input pins (VIN+ and VIN-) from going too far above
VDD and dump any currents onto VDD. When
implemented as shown, resistors R1 and R2, also limit
the current through D1 and D2.
-1.0
Time (1 ms/div)
VDD
FIGURE 4-1:
The MCP6231/1R/1U/2/4
Show No Phase Reversal.
4.1.2
INPUT VOLTAGE AND CURRENT
LIMITS
The ESD protection on the inputs can be depicted as
shown in Figure 4-2. This structure was chosen to
protect the input transistors and to minimize input bias
current (IB). The input ESD diodes clamp the inputs
when they try to go more than one diode drop below
VSS. They also clamp any voltages that go too far
above VDD; their breakdown voltage is high enough to
allow normal operation and low enough to bypass quick
ESD events within the specified limits.
D1
V1
D2
+
R1
V2
MCP623X
–
R2
R3
VSS – (minimum expected V1)
2 mA
VSS – (minimum expected V2)
R2 >
2 mA
R1 >
FIGURE 4-3:
Protecting the Analog Inputs.
It is also possible to connect the diodes to the left of
resistors, R1 and R2. In this case, current through the
diodes, D1 and D2, needs to be limited by some other
mechanism. The resistors then serve as in-rush current
limiters; the DC current into the input pins (VIN+ and
VIN-) should be very small.
2004-2020 Microchip Technology Inc.
DS20001881G-page 13
MCP6231/1R/1U/2/4
4.1.3
NORMAL OPERATION
1k
1,000
The input stage of the MCP6231/1R/1U/2/4 op amps
use two differential CMOS input stages in parallel. One
operates at low Common-mode input voltage (VCM),
while the other operates at high VCM. With this
topology, the device operates with VCM up to 0.3V
above VDD and 0.3V below VSS.
4.2
Capacitive Loads
Driving large capacitive loads can cause stability
problems for voltage feedback op amps. As the load
capacitance increases, the feedback loop’s phase
margin decreases and the closed-loop bandwidth is
reduced. This produces gain peaking in the frequency
response, with overshoot and ringing in the step
response. A unity gain buffer (G = +1) is the most
sensitive to capacitive loads, but all gains show the
same general behavior.
When driving large capacitive loads with these op amps
(e.g., >60 pF when G = +1), a small series resistor at
the output (RISO in Figure 4-4) improves the feedback
loop’s phase margin (stability) by making the output
load resistive at higher frequencies. The bandwidth will
be generally lower than the bandwidth with no
capacitive load.
—
RISO
VOUT
MCP623X
VIN
+
GN = 1 V/V
GN = 2 V/V
GN 4 V/V
100
100
10p
10
100p
1n
10n
100
1000
10000
Normalized Load Capacitance; CL/GN (F)
FIGURE 4-5:
Recommended RISO Values
for Capacitive Loads.
Rail-to-Rail Output
The output voltage range of the MCP6231/1R/1U/2/4
op amps is VDD – 35 mV (maximum) and VSS + 35 mV
(minimum) when RL = 10 k is connected to VDD/2 and
VDD = 5.5V. Refer to Figure 2-14 for more information.
4.3
10,000
10k
Recommended RISO (Ω)
A significant amount of current can flow out of the
inputs when the Common-mode voltage (VCM) is below
ground (VSS); see Figure 2-19. Applications that are
high-impedance may need to limit the usable voltage
range.
After selecting RISO for your circuit, double-check the
resulting frequency response peaking and step
response overshoot. Evaluation on the bench and
simulations with the MCP6231/1R/1U/2/4 SPICE
macro model are very helpful. Modify RISO’s value until
the response is reasonable.
4.4
Supply Bypass
With this op amp, the power supply pin (VDD for
single-supply) should have a local bypass capacitor
(i.e., 0.01 µF to 0.1 µF) within 2 mm for good
high-frequency performance. It can use a bulk capacitor (i.e., 1 µF or larger) within 100 mm to provide
large, slow currents. This bulk capacitor can be
shared with other nearby analog parts.
4.5
Unused Op Amps
An unused op amp in a quad package (MCP6234)
should be configured as shown in Figure 4-6. Both
circuits prevent the output from toggling and causing
crosstalk. Circuit A can use any reference voltage
between the supplies, provides a buffered DC voltage
and minimizes the supply current draw of the unused
op amp. Circuit B minimizes the number of components, but may draw a little more supply current for the
unused op amp.
CL
¼ MCP6234 (A)
¼ MCP6234 (B)
VDD
FIGURE 4-4:
Output Resistor, RISO,
Stabilizes Large Capacitive Loads.
Figure 4-5 gives recommended RISO values for different capacitive loads and gains. The x-axis is the
normalized load capacitance (CL/GN), where GN is the
circuit’s noise gain. For noninverting gains, GN and the
signal gain are equal. For inverting gains, GN is
1 + |Signal Gain| (e.g., –1 V/V gives GN = +2 V/V).
R1
VDD
+
R2
–
+
VREF
–
R2
V REF = V DD -------------------R1 + R2
FIGURE 4-6:
DS20001881G-page 14
VDD
Unused Op Amps.
2004-2020 Microchip Technology Inc.
MCP6231/1R/1U/2/4
4.6
PCB Surface Leakage
4.7
In applications where low input bias current is critical,
Printed Circuit Board (PCB) surface leakage effects
need to be considered. Surface leakage is caused by
humidity, dust or other contamination on the board.
Under low humidity conditions, a typical resistance
between nearby traces is 1012. A 5V difference would
cause 5 pA of current to flow, which is greater than the
MCP6231/1R/1U/2/4 family’s bias current at +25°C
(1 pA, typical).
The easiest way to reduce surface leakage is to use a
guard ring around sensitive pins (or traces). The guard
ring is biased at the same voltage as the sensitive pin.
An example of this type of layout is shown in
Figure 4-7.
VIN–
VIN+
Application Circuits
4.7.1
MATCHING THE IMPEDANCE AT
THE INPUTS
To minimize the effect of input bias current in an amplifier circuit (this is important for very high source
impedance applications, such as pH meters and
transimpedance amplifiers), the impedances at the
inverting and noninverting inputs need to be matched.
This is done by choosing the circuit resistor values so
that the total resistance at each input is the same.
Figure 4-8 shows a summing amplifier circuit.
RG2
VIN2
RG1
VIN1
VSS
RF
VDD
–
RX
MCP623X
RY
Guard Ring
FIGURE 4-7:
for Inverting Gain.
1.
2.
Example Guard Ring Layout
Noninverting Gain and Unity-Gain Buffer:
a) Connect the noninverting pin (VIN+) to the
input with a wire that does not touch the
PCB surface.
b) Connect the guard ring to the inverting input
pin (VIN-). This biases the guard ring to the
Common-mode input voltage.
Inverting Gain and Transimpedance Amplifiers
(convert current to voltage, such as photo
detectors):
a) Connect the guard ring to the noninverting
input pin (VIN+). This biases the guard ring
to the same reference voltage as the
op amp (e.g., VDD/2 or ground).
b) Connect the inverting pin (VIN-) to the input
with a wire that does not touch the PCB
surface.
RZ
FIGURE 4-8:
VOUT
+
Summing Amplifier Circuit.
To match the inputs, set all voltage sources to ground
and calculate the total resistance at the input nodes. In
this summing amplifier circuit, the resistance at the
inverting input is calculated by setting VIN1, VIN2 and
VOUT to ground. In this case, RG1, RG2 and RF are in
parallel. The total resistance at the inverting input is:
EQUATION 4-1:
RVIN- =
1
1
1
1
+
+
RG1 RG2 RF
Where:
RVIN- = Total Resistance at the Inverting Input
At the noninverting input, VDD is the only voltage source.
When VDD is set to ground, both RX and RY are in parallel.
The total resistance at the noninverting input is:
EQUATION 4-2:
Where:
1
R VIN + = ------------------------- + RZ
1-
1- + ---- ----R
R Y
X
RVIN+ = Total Resistance at the Inverting Input
2004-2020 Microchip Technology Inc.
DS20001881G-page 15
MCP6231/1R/1U/2/4
To minimize output offset voltage and increase circuit
accuracy, the resistor values need to meet the
conditions:
+
VAC
MCP623X
EQUATION 4-3:
VOUT
–
RVIN+ = RVIN-
RG
RF
CPARA
CF
VDC
4.7.2
COMPENSATING FOR THE
PARASITIC CAPACITANCE
In analog circuit design, the PCB parasitic capacitance
can compromise the circuit behavior; Figure 4-9 shows
a typical scenario. If the input of an amplifier sees
parasitic capacitance of several picofarad (CPARA,
which includes the Common-mode capacitance of
6 pF, typical), as well as large RF and RG, the frequency
response of the circuit will include a zero. This parasitic
zero introduces gain peaking and can cause circuit
instability.
DS20001881G-page 16
RG
C F = C PARA ------RF
FIGURE 4-9:
Effect of Parasitic
Capacitance at the Input.
One solution is to use smaller resistor values to push
the zero to a higher frequency. Another solution is to
compensate by introducing a pole at the point at which
the zero occurs. This can be done by adding CF in
parallel with the feedback resistor (RF). CF needs to be
selected so that the ratio, CPARA:CF, is equal to the ratio
of RF:RG.
2004-2020 Microchip Technology Inc.
MCP6231/1R/1U/2/4
5.0
DESIGN AIDS
Microchip provides the basic design tools needed for
the MCP6231/1R/1U/2/4 family of op amps.
5.1
SPICE Macro Model
The latest SPICE macro model for the
MCP6231/1R/1U/2/4 op amps is available on the
Microchip website at www.microchip.com. This model
is intended to be an initial design tool that works well in
the op amp’s linear region of operation over the
temperature range. See the model file for information
on its capabilities.
Bench testing is a very important part of any design and
cannot be replaced with simulations. Also, simulation
results using this macro model need to be validated by
comparing them to the data sheet specifications and
characteristic curves.
5.2
FilterLab®
Software
FilterLab®
Microchip’s
software is an innovative
software tool that simplifies analog active filter (using
op amps) design. Available at no cost from the
Microchip website at www.microchip.com/filterlab, the
FilterLab design tool provides full schematic diagrams
of the filter circuit with component values. It also
outputs the filter circuit in SPICE format, which can be
used with the macro model to simulate actual filter
performance.
5.3
Mindi™ Circuit Designer and
Simulator
Microchip’s Mindi™ Circuit Designer and Simulator aids
in the design of various circuits useful for active filter,
amplifier and power management applications. It is a
free online circuit designer and simulator available from
the Microchip website at www.microchip.com/mindi.
This interactive circuit designer and simulator enables
designers to quickly generate circuit diagrams, and
simulate circuits. Circuits developed using the Mindi
Circuit Designer and Simulator can be downloaded to a
personal computer or workstation.
5.4
5.5
Analog Demonstration and
Evaluation Boards
Microchip offers a broad spectrum of Analog Demonstration and Evaluation Boards that are designed to
help you achieve faster time to market. For a complete
listing of these boards and their corresponding user’s
guides and technical information, visit the Microchip
website at:
www.microchip.com/analogtools
Two of our boards that are especially useful are:
• P/N SOIC8EV: 8-Pin SOIC/MSOP/TSSOP/DIP
Evaluation Board
• P/N SOIC14EV: 14-Pin SOIC/TSSOP/DIP
Evaluation Board
5.6
Application Notes
The following Microchip Application Notes are available
on the Microchip website at www.microchip. com/
appnotes and are recommended as supplemental
reference resources.
• ADN003: “Select the Right Operational Amplifier
for your Filtering Circuits,” DS21821
• AN722: “Operational Amplifier Topologies and DC
Specifications,” DS00722
• AN723: “Operational Amplifier AC Specifications
and Applications,” DS00723
• AN884: “Driving Capacitive Loads With Op Amps,”
DS00884
• AN990: “Analog Sensor Conditioning
Circuits – An Overview,” DS00990
These application notes and others are listed in the
design guide:
• “Signal Chain Design Guide,” DS21825
Microchip Advanced Part Selector
(MAPS)
MAPS is a software tool that helps semiconductor
professionals efficiently identify Microchip devices that
fit a particular design requirement. Available at no cost
from the Microchip website at www.microchip.com/
maps, MAPS is an overall selection tool for Microchip’s
product portfolio that includes Analog, Memory, MCUs
and DSCs. Using this tool you can define a filter to sort
features for a parametric search of devices and export
side-by-side technical comparison reports. Helpful links
are also provided for data sheets, purchase and
sampling of Microchip parts.
2004-2020 Microchip Technology Inc.
DS20001881G-page 17
MCP6231/1R/1U/2/4
NOTES:
DS20001881G-page 18
2004-2020 Microchip Technology Inc.
MCP6231/1R/1U/2/4
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
5-Lead SC70 (MCP6231U Only)
Example:
XXNN
AS25
5-Lead SOT-23
5
Device
4
XXNN
1
2
MCP6231
BJNN
MCP6231R
BKNN
MCP6231U
BLNN
Note:
3
Code
Applies to 5-Lead SOT-23.
5
4
BJ25
1
2
3
Example:
8-Lead DFN (2 x 3 mm) (MCP6231)
XXX
YWW
NNN
AER
929
256
Example:
8-Lead TDFN (2 x 3 mm) (MCP6232)
AAE
929
256
XXX
YWW
NNN
Example:
8-Lead MSOP
6231E
929256
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Example:
6232E
929256
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
2004-2020 Microchip Technology Inc.
DS20001881G-page 19
MCP6231/1R/1U/2/4
Package Marking Information (Continued)
8-Lead PDIP (300 mil)
XXXXXXXX
XXXXXNNN
YYWW
8-Lead SOIC (150 mil)
XXXXXXXX
XXXXYYWW
NNN
14-Lead PDIP (300 mil) (MCP6234)
Example:
MCP6232
E/P256
0929
MCP6232
E/P e3 256
0929
OR
Example:
MCP6232
E/SN0929
256
MCP6232E
SN e3 0929
256
OR
Example:
XXXXXXXXXXXXXX
XXXXXXXXXXXXXX
YYWWNNN
14-Lead SOIC (150 mil) (MCP6234)
MCP6234
e3
E/P^^
0929256
Example:
MCP6234
e3
E/SL^^
0929256
XXXXXXXXXX
XXXXXXXXXX
YYWWNNN
14-Lead TSSOP (MCP6234)
Example:
XXXXXXXX
YYWW
6234E
0929
NNN
256
DS20001881G-page 20
2004-2020 Microchip Technology Inc.
MCP6231/1R/1U/2/4
5-Lead Plastic Small Outline Transistor (LT) [SC70]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
D
A
e
e
3
B
1
E1
E
2X
0.15 C
4
N
5X TIPS
0.30 C
NOTE 1
2X
0.15 C
5X b
0.10
C A B
TOP VIEW
C
c
A2
A
SEATING
PLANE
A1
L
SIDE VIEW
END VIEW
Microchip Technology Drawing C04-061-LT Rev E Sheet 1 of 2
2004-2020 Microchip Technology Inc.
DS20001881G-page 21
MCP6231/1R/1U/2/4
5-Lead Plastic Small Outline Transistor (LT) [SC70]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units
Dimension Limits
Number of Pins
N
e
Pitch
Overall Height
A
Standoff
A1
A2
Molded Package Thickness
Overall Length
D
Overall Width
E
Molded Package Width
E1
b
Terminal Width
Terminal Length
L
c
Lead Thickness
MIN
0.80
0.00
0.80
0.15
0.10
0.08
MILLIMETERS
NOM
5
0.65 BSC
2.00 BSC
2.10 BSC
1.25 BSC
0.20
-
MAX
1.10
0.10
1.00
0.40
0.46
0.26
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or
protrusions shall not exceed 0.15mm per side.
3. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Microchip Technology Drawing C04-061-LT Rev E Sheet 2 of 2
DS20001881G-page 22
2004-2020 Microchip Technology Inc.
MCP6231/1R/1U/2/4
5-Lead Plastic Small Outline Transistor (LT) [SC70]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
E
Gx
SILK SCREEN
3
2
1
C
G
4
5
Y
X
RECOMMENDED LAND PATTERN
Units
Dimension Limits
E
Contact Pitch
Contact Pad Spacing
C
Contact Pad Width
X
Contact Pad Length
Y
Distance Between Pads
G
Distance Between Pads
Gx
MIN
MILLIMETERS
NOM
0.65 BSC
2.20
MAX
0.45
0.95
1.25
0.20
Notes:
1. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing No. C04-2061-LT Rev E
2004-2020 Microchip Technology Inc.
DS20001881G-page 23
MCP6231/1R/1U/2/4
5-Lead Plastic Small Outline Transistor (OT) [SOT23]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
0.20 C 2X
D
e1
A
D
N
E/2
E1/2
E1
E
(DATUM D)
(DATUM A-B)
0.15 C D
2X
NOTE 1
1
2
e
B
NX b
0.20
C A-B D
TOP VIEW
A
A A2
0.20 C
SEATING PLANE
A
SEE SHEET 2
A1
C
SIDE VIEW
Microchip Technology Drawing C04-091-OT Rev F Sheet 1 of 2
DS20001881G-page 24
2004-2020 Microchip Technology Inc.
MCP6231/1R/1U/2/4
5-Lead Plastic Small Outline Transistor (OT) [SOT23]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
c
T
L
L1
VIEW A-A
SHEET 1
Units
Dimension Limits
N
Number of Pins
e
Pitch
e1
Outside lead pitch
A
Overall Height
A2
Molded Package Thickness
Standoff
A1
Overall Width
E
Molded Package Width
E1
Overall Length
D
Foot Length
L
Footprint
L1
I
Foot Angle
c
Lead Thickness
b
Lead Width
MIN
0.90
0.89
-
0.30
0°
0.08
0.20
MILLIMETERS
NOM
5
0.95 BSC
1.90 BSC
2.80 BSC
1.60 BSC
2.90 BSC
0.60 REF
-
MAX
1.45
1.30
0.15
0.60
10°
0.26
0.51
Notes:
1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or
protrusions shall not exceed 0.25mm per side.
2. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Microchip Technology Drawing C04-091-OT Rev F Sheet 2 of 2
2004-2020 Microchip Technology Inc.
DS20001881G-page 25
MCP6231/1R/1U/2/4
5-Lead Plastic Small Outline Transistor (OT) [SOT23]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
X
SILK SCREEN
5
Y
Z
C
G
1
2
E
GX
RECOMMENDED LAND PATTERN
Units
Dimension Limits
E
Contact Pitch
C
Contact Pad Spacing
X
Contact Pad Width (X5)
Contact Pad Length (X5)
Y
Distance Between Pads
G
Distance Between Pads
GX
Overall Width
Z
MIN
MILLIMETERS
NOM
0.95 BSC
2.80
MAX
0.60
1.10
1.70
0.35
3.90
Notes:
1. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing No. C04-2091-OT Rev F
DS20001881G-page 26
2004-2020 Microchip Technology Inc.
MCP6231/1R/1U/2/4
!""#$%&
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-
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e
D
b
N
N
L
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E2
E
EXPOSED PAD
NOTE 1
NOTE 1
2
1
2
1
D2
BOTTOM VIEW
TOP VIEW
A
A3
A1
NOTE 2
/
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2
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