MCP6281/1R/2/3/4/5
450 µA, 5 MHz Rail-to-Rail Op Amp
Features
Description
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The Microchip Technology Inc. MCP6281/1R/2/3/4/5
family of operational amplifiers (op amps) provide wide
bandwidth for the current. This family has a 5 MHz Gain
Bandwidth Product (GBWP) and a 65° phase margin.
This family also operates from a single supply voltage
as low as 2.2V, while drawing 450 µA (typical) quiescent
current. Additionally, the MCP6281/1R/2/3/4/5 supports
rail-to-rail input and output swing, with a common mode
input voltage range of VDD + 300 mV to VSS – 300 mV.
This family of operational amplifiers is designed with
Microchip’s advanced CMOS process.
Gain Bandwidth Product: 5 MHz (typical)
Supply Current: IQ = 450 µA (typical)
Supply Voltage: 2.2V to 6.0V
Rail-to-Rail Input/Output
Extended Temperature Range: -40°C to +125°C
Available in Single, Dual, and Quad Packages
Single with CS (MCP6283)
Dual with CS (MCP6285)
Applications
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The MCP6285 has a Chip Select (CS) input for dual op
amps in an 8-pin package. This device is manufactured
by cascading the two op amps (the output of op amp A
connected to the non-inverting input of op amp B). The
CS input puts the device in Low-power mode.
Automotive
Portable Equipment
Photodiode Amplifier
Analog Filters
Notebooks and PDAs
Battery-Powered Systems
The MCP6281/1R/2/3/4/5 family operates over the
Extended Temperature Range of -40°C to +125°C. It
also has a power supply range of 2.2V to 6.0V.
Design Aids
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SPICE Macro Models
FilterLab® Software
Mindi™ Circuit Designer & Simulator
MAPS (Microchip Advanced Part Selector)
Analog Demonstration and Evaluation Boards
Application Notes
Package Types
NC 1
VIN
_
MCP6281
SOT-23-5
8 NC
2
VIN+ 3
VSS 4
7 VDD
VSS 2
6 VOUT
5 NC
MCP6283
PDIP, SOIC, MSOP
NC 1
VSS 4
8 CS
+
7 VDD
6 VOUT
5 NC
MCP6283
VOUT 1
VSS 2
VIN+ 3
6 VDD
-
VIN+ 3
5 CS
_
4 VIN
VOUTA 1
VINA
_
2
VINA+ 3
VDD 4
VINB+ 5
VINB_ 6
VOUTB 7
2019 Microchip Technology Inc.
-
14 VOUTD
-+
+
VINA_ 2
4 VIN–
MCP6284
PDIP, SOIC, TSSOP
SOT-23-6
+
VIN_ 2
VIN+ 3
VDD 2
-
VOUTA 1
5 VSS
VOUT 1
4 VIN–
VIN+ 3
MCP6282
PDIP, SOIC, MSOP
SOT-23-5
5 VDD
VOUT 1
+
+
MCP6281R
+
MCP6281
PDIP, SOIC, MSOP
- 13 VIND_
12 VIND+
11 VSS
10 VINC+
8 VDD
-+
VINA+ 3
7 VOUTB
+-
VSS 4
6 VINB_
5 VINB+
MCP6285
PDIP, SOIC, MSOP
VOUTA/VINB+ 1
VINA_ 2
VINA+ 3
VSS 4
8 VDD
7 VOUTB
- +
+-
_
6 VINB
5 CS
-+ +- 9 V _
INC
8 VOUTC
DS20001811F-page 1
MCP6281/1R/2/3/4/5
1.0
ELECTRICAL
CHARACTERISTICS
VDD – VSS ........................................................................7.0V
† Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
Current at Input Pins ....................................................±2 mA
†† See Section 4.1.2 “Input Voltage and Current Limits”.
Absolute Maximum Ratings †
Analog Inputs (VIN+, VIN–) †† ........ VSS – 1.0V to VDD + 1.0V
All Other Inputs and Outputs ......... VSS – 0.3V to VDD + 0.3V
Difference Input Voltage ...................................... |VDD – VSS|
Output Short Circuit Current .................................Continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature....................................–65°C to +150°C
Maximum Junction Temperature (TJ) ......................... .+150°C
ESD Protection On All Pins (HBM; MM) 4 kV; 400V
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25 C, VDD = +2.2V to +5.5V, VSS = GND, VOUT VDD/2,
VCM = VDD/2, VL = VDD/2, RL = 10 kto VL and CS is tied low. (refer to Figure 1-2 and Figure 1-3).
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Offset Voltage
VOS
-3.0
—
+3.0
mV
VCM = VSS (Note 1)
Input Offset Voltage
(Extended Temperature)
VOS
-5.0
—
+5.0
mV
TA= -40°C to +125°C,
VCM = VSS (Note 1)
Input Offset Temperature Drift
VOS/TA
—
±1.7
—
Power Supply Rejection Ratio
PSRR
70
90
—
Input Offset
µV/°C TA= -40°C to +125°C,
VCM = VSS (Note 1)
dB
VCM = VSS (Note 1)
Input Bias, Input Offset Current and Impedance
IB
—
±1.0
—
pA
Note 2
At Temperature
IB
—
50
200
pA
TA= +85°C (Note 2)
At Temperature
IB
—
2
5
nA
TA= +125°C (Note 2)
Input Bias Current
Input Offset Current
IOS
—
±1.0
—
pA
Note 3
Common Mode Input Impedance
ZCM
—
1013||6
—
||pF
Note 3
Differential Input Impedance
ZDIFF
—
1013||3
—
||pF
Note 3
Common Mode (Note 4)
Common Mode Input Range
VCMR
VSS 0.3
—
VDD + 0.3
V
Common Mode Rejection Ratio
CMRR
70
85
—
dB
VCM = -0.3V to 2.5V, VDD = 5V
Common Mode Rejection Ratio
CMRR
65
80
—
dB
VCM = -0.3V to 5.3V, VDD = 5V
AOL
90
110
—
dB
VOUT = 0.2V to VDD – 0.2V,
VCM = VSS (Note 1)
VOL, VOH
VSS + 15
—
VDD – 15
mV
0.5V input overdrive
ISC
—
±25
—
mA
VDD
2.2
—
6.0
V
(Note 5)
IQ
300
450
570
µA
IO = 0
Open-Loop Gain
DC Open-Loop Gain (Large Signal)
Output
Maximum Output Voltage Swing
Output Short Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
Note 1:
2:
3:
4:
5:
The MCP6285’s VCM for op amp B (pins VOUTA/VINB+ and VINB–) is VSS + 100 mV.
The current at the MCP6285’s VINB– pin is specified by IB only.
This specification does not apply to the MCP6285’s VOUTA/VINB+ pin.
The MCP6285’s VINB– pin (op amp B) has a common mode range (VCMR) of VSS + 100 mV to VDD – 100 mV.
The MCP6285’s VOUTA/VINB+ pin (op amp B) has a voltage range specified by VOH and VOL.
All parts with date codes November 2007 and later have been screened to ensure operation at VDD = 6.0V. However,
the other minimum and maximum specifications are measured at 2.4V and/or 5.5V.
DS20001811F-page 2
2019 Microchip Technology Inc.
MCP6281/1R/2/3/4/5
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to +5.5V, VSS = GND, VOUT VDD/2,
VCM = VDD/2, VL = VDD/2, RL = 10 kto VL, CL = 60 pF and CS is tied low. (refer to Figure 1-2 and Figure 1-3).
Parameters
Sym
Min
Typ
Max
Units
MHz
Conditions
AC Response
Gain Bandwidth Product
GBWP
—
5.0
—
Phase Margin at Unity-Gain
PM
—
65
—
°
Slew Rate
SR
—
2.5
—
V/µs
Input Noise Voltage
Eni
—
5.2
—
µVP-P
Input Noise Voltage Density
eni
—
16
—
nV/Hz
f = 1 kHz
Input Noise Current Density
ini
—
3
—
fA/Hz
f = 1 kHz
G = +1 V/V
Noise
f = 0.1 Hz to 10 Hz
MCP6283/MCP6285 CHIP SELECT (CS) SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to +5.5V, VSS = GND, VOUT VDD/2,
VCM = VDD/2, VL = VDD/2, RL = 10 kto VL, CL = 60 pF and CS is tied low. (refer to Figure 1-2 and Figure 1-3).
Parameters
Sym
Min
Typ
Max
Units
Conditions
CS Logic Threshold, Low
VIL
VSS
—
0.2 VDD
V
CS Input Current, Low
ICSL
—
0.01
—
µA
CS Logic Threshold, High
VIH
0.8 VDD
—
VDD
V
CS Input Current, High
ICSH
—
0.7
2
µA
CS = VDD
GND Current per Amplifier
ISS
—
-0.7
—
µA
CS = VDD
Amplifier Output Leakage
—
—
0.01
—
µA
CS = VDD
CS Low to Valid Amplifier
Output, Turn-on Time
tON
—
4
10
µs
CS Low 0.2 VDD, G = +1 V/V,
VIN = VDD/2, VOUT = 0.9 VDD/2,
VDD = 5.0V
CS High to Amplifier Output High-Z
tOFF
—
0.01
—
µs
CS High 0.8 VDD, G = +1 V/V,
VIN = VDD/2, VOUT = 0.1 VDD/2
VHYST
—
0.6
—
V
VDD = 5V
CS Low Specifications
CS = VSS
CS High Specifications
Dynamic Specifications (Note 1)
Hysteresis
Note 1:
The input condition (VIN) specified applies to both op amp A and B of the MCP6285. The dynamic specification is tested
at the output of op amp B (VOUTB).
CS
VIL
VIH
tOFF
tON
VOUT
ISS
ICS
Hi-Z
Hi-Z
-0.7 µA
(typical)
0.7 µA
(typical)
-450 µA
(typical)
10 nA
(typical)
-0.7 µA
(typical)
0.7 µA
(typical)
FIGURE 1-1:
Timing Diagram for the Chip
Select (CS) pin on the MCP6283 and MCP6285.
2019 Microchip Technology Inc.
DS20001811F-page 3
MCP6281/1R/2/3/4/5
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, VDD = +2.2V to +5.5V and VSS = GND.
Parameters
Sym
Min
Typ
Max
Units
Operating Temperature Range
TA
-40
—
+125
°C
Storage Temperature Range
TA
-65
—
+150
°C
Thermal Resistance, 5L-SOT-23
JA
—
256
—
°C/W
Thermal Resistance, 6L-SOT-23
JA
—
230
—
°C/W
Thermal Resistance, 8L-PDIP
JA
—
85
—
°C/W
Thermal Resistance, 8L-SOIC
JA
—
163
—
°C/W
Thermal Resistance, 8L-MSOP
JA
—
206
—
°C/W
Conditions
Temperature Ranges
Note
Thermal Package Resistances
Thermal Resistance, 14L-PDIP
JA
—
70
—
°C/W
Thermal Resistance, 14L-SOIC
JA
—
120
—
°C/W
Thermal Resistance, 14L-TSSOP
JA
—
100
—
°C/W
Note:
1.1
The Junction Temperature (TJ) must not exceed the Absolute Maximum specification of +150°C.
Test Circuits
The test circuits used for the DC and AC tests are
shown in Figure 1-2 and Figure 1-2. The bypass
capacitors are laid out according to the rules discussed
in Section 4.6 “Supply Bypass”.
VDD
VIN
RN
0.1 µF 1 µF
+
–
VOUT
MCP628X
CL
VDD/2 RG
RL
RF
VL
FIGURE 1-2:
AC and DC Test Circuit for
Most Non-Inverting Gain Conditions.
VDD
VDD/2
RN
0.1 µF 1 µF
+
VOUT
MCP628X
–
VIN
RG
CL
RL
RF
VL
FIGURE 1-3:
AC and DC Test Circuit for
Most Inverting Gain Conditions.
DS20001811F-page 4
2019 Microchip Technology Inc.
MCP6281/1R/2/3/4/5
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to +6.0V, VSS = GND, VCM = VDD/2, VOUT VDD/2,
VL = VDD/2, RL = 10 k to VL, CL = 60 pF and CS is tied low.
30%
832 Samples
VCM = VSS
10%
8%
6%
4%
2%
20%
15%
10%
5%
0%
2.8
2.4
2.0
1.6
-10
-8
Input Offset Voltage (mV)
35%
FIGURE 2-5:
TA = +125 °C.
300
100
TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
-100
-0.5
0.0
0.5
1.0
1.5
3600
TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
0
-50
-100
2.0
2.5
Common Mode Input Voltage (V)
FIGURE 2-3:
Input Offset Voltage vs.
Common Mode Input Voltage at VDD = 2.2V.
2019 Microchip Technology Inc.
50
1.0
-50
100
0.5
0
150
-0.5
50
200
6.0
150
5.5
200
VDD = 5.5V
250
5.0
VDD = 2.2V
250
Input Bias Current at
4.5
Input Bias Current at
Input Offset Voltage (µV)
Input Offset Voltage (µV)
300
Input Bias Current (pA)
0.0
FIGURE 2-2:
TA = +85 °C.
3200
100
Input Bias Current (pA)
2800
90
0%
2400
80
5%
4.0
70
10
10%
3.5
60
8
15%
3.0
50
6
20%
2.5
40
4
25%
2000
0%
30
2
210 Samples
TA = +125°C
30%
1600
5%
20
0
1200
10%
10
-2
Input Offset Voltage Drift.
800
15%
0
-4
2.0
20%
Percentage of Occurrences
210 Samples
TA = +85°C
0
25%
Percentage of Occurrences
FIGURE 2-4:
Input Offset Voltage.
200
FIGURE 2-1:
-6
Input Offset Voltage Drift (µV/°C)
400
1.2
0.8
0.4
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
0%
832 Samples
VCM = VSS
TA = -40°C to +125°C
25%
1.5
12%
Percentage of Occurrences
Percentage of Occurrences
14%
Common Mode Input Voltage (V)
FIGURE 2-6:
Input Offset Voltage vs.
Common Mode Input Voltage at VDD = 5.5V.
DS20001811F-page 5
MCP6281/1R/2/3/4/5
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to +6.0V, VSS = GND, VCM = VDD/2, VOUT VDD/2,
VL = VDD/2, RL = 10 k to VL, CL = 60 pF and CS is tied low.
10,000
VCM = VSS
Representative Part
250
Input Bias, Offset Currents
(pA)
Input Offset Voltage (µV)
300
200
150
100
50
0
VDD = 5.5V
VDD = 2.2V
-50
-100
VCM = VDD
VDD = 5.5V
1,000
Input Bias Current
100
Input Offset Current
10
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
25
35
45
Output Voltage (V)
FIGURE 2-7:
Output Voltage.
65
75
85
95
105 115 125
FIGURE 2-10:
Input Bias, Input Offset
Currents vs. Ambient Temperature.
Input Offset Voltage vs.
120
110
PSRR-
90
CMRR
110
PSRR, CMRR (dB)
100
CMRR, PSRR (dB)
55
Ambient Temperature (°C)
PSRR+
80
70
60
50
40
CMRR
100
90
PSRR
VCM = VSS
80
70
30
20
60
1.E+00
1.E+01
1
1.E+02
10
1.E+03
100
1.E+04
1k
1.E+05
10k
-50
1.E+06
100k
1M
-25
Frequency (Hz)
FIGURE 2-8:
Frequency.
FIGURE 2-11:
Temperature.
CMRR, PSRR vs.
2.5
45
Input Bias, Offset Currents
(nA)
Input Bias, Offset Currents
(pA)
55
Input Bias Current
35
25
15
5
Input Offset Current
-5
TA = +85°C
VDD = 5.5V
-15
0
25
50
75
100
125
Ambient Temperature (°C)
2.0
CMRR, PSRR vs. Ambient
TA = +125°C
VDD = 5.5V
1.5
Input Bias Current
1.0
0.5
0.0
Input Offset Current
-0.5
-1.0
-25
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Common Mode Input Voltage (V)
FIGURE 2-9:
Input Bias, Offset Currents
vs. Common Mode Input Voltage at TA = +85°C.
DS20001811F-page 6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Common Mode Input Voltage (V)
FIGURE 2-12:
Input Bias, Offset Currents
vs. Common Mode Input Voltage at TA = +125°C.
2019 Microchip Technology Inc.
MCP6281/1R/2/3/4/5
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to +6.0V, VSS = GND, VCM = VDD/2, VOUT VDD/2,
VL = VDD/2, RL = 10 k to VL, CL = 60 pF and CS is tied low.
500
400
300
TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
100
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
1000
100
10
VDD - VOH
1
0.01
Power Supply Voltage (V)
0
100
-30
-90
-180
90
VDD = 5.5V
5
85
Gain Bandwidth Product
4
1.E+08
75
VDD = 5.5V
2
70
VDD = 2.2V
Phase Margin
1
65
-50
-25
0
25
50
75
100
60
125
Ambient Temperature (°C)
Open-Loop Gain, Phase vs.
FIGURE 2-17:
Gain Bandwidth Product,
Phase Margin vs. Ambient Temperature.
10
4.5
4.0
Slew Rate (V/µs)
VDD = 5.5V
VDD = 2.2V
1
3.5
Falling Edge, VDD = 2.2V
Falling Edge, VDD = 5.5V
3.0
2.5
2.0
1.5
Rising Edge, VDD = 5.5V
Rising Edge, VDD = 2.2V
1.0
0.5
1M
1.E+07
100k
1.E+06
10k
1.E+05
0.0
1k
1.E+04
0.1
1.E+03
Maximum Output Voltage
Swing (VP-P)
80
3
Frequency (Hz)
FIGURE 2-14:
Frequency.
VDD = 2.2V
0
-210
10k 100k 1M 10M 100M
1.E+07
1k
1.E+06
100
1.E+05
10
1.E+04
1
1.E+03
0
1.E+02
-150
1.E+01
20
1.E+00
-120
Gain Bandwidth Product
(MHz)
-60
Phase
0.1
10
6
40
-20
1
FIGURE 2-16:
Output Voltage Headroom
vs. Output Current Magnitude.
Open-Loop Phase (°)
Gain
1.E-01
Open-Loop Gain (dB)
120
60
0.1
Output Current Magnitude (mA)
FIGURE 2-13:
Quiescent Current vs.
Power Supply Voltage.
80
VOL - VSS
Phase Margin (°)
200
Ouput Voltage Headroom (mV)
Quiescent Current
(µA/amplifier)
600
10M
-50
-25
FIGURE 2-15:
Maximum Output Voltage
Swing vs. Frequency.
2019 Microchip Technology Inc.
0
25
50
75
100
125
Ambient Temperature (°C)
Frequency (Hz)
FIGURE 2-18:
Temperature.
Slew Rate vs. Ambient
DS20001811F-page 7
MCP6281/1R/2/3/4/5
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to +6.0V, VSS = GND, VCM = VDD/2, VOUT VDD/2,
VL = VDD/2, RL = 10 k to VL, CL = 60 pF and CS is tied low.
30
Input Noise Voltage Density
(nV/Hz)
Input Noise Voltage Density
(nV/Hz)
1,000
100
10
1.E-01
1.E+00
0.1
1
1.E+01
1.E+02
10
100
1.E+03
1.E+04
1k
10k
1.E+05
1.E+06
100k
f = 1 kHz
VDD = 5.0V
25
20
15
10
5
0
0.0
1M
0.5
Frequency (Hz)
FIGURE 2-19:
vs. Frequency.
Input Noise Voltage Density
30
25
20
15
TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1.5
4.0
4.5
5.0
3.0
3.5
4.0
4.5
5.0
130
120
110
100
5.5
1
10
100
Frequency (kHz)
FIGURE 2-20:
Output Short Circuit Current
vs. Power Supply Voltage.
FIGURE 2-23:
Channel-to-Channel
Separation vs. Frequency (MCP6282 and
MCP6284 only).
1000
Op-Amp shuts off here
450
900
400
Quiescent Current
(µA/Amplifier)
Op-Amp turns on here
350
300
250
Hysteresis
200
150
CS swept
high to low
100
CS swept
low to high
0.2
0.4
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FIGURE 2-21:
Quiescent Current vs.
Chip Select (CS) Voltage at VDD = 2.2V
(MCP6283 and MCP6285 only).
2.2
CS swept
low to high
600
500
400
300
200
Op Amp toggles On/Off here
0
0.6
Chip Select Voltage (V)
DS20001811F-page 8
Hysteresis
700
100
VDD = 2.2V
0
0.0
VDD = 5.5V
800
CS swept
high to low
500
Quiescent Current
(µA/Amplifier)
2.5
140
Power Supply Voltage (V)
50
2.0
FIGURE 2-22:
Input Noise Voltage Density
vs. Common Mode Input Voltage at 1 kHz.
Channel-to-Channel Separation
(dB)
Ouptut Short Circuit Current
(mA)
35
10
1.0
Common Mode Input Voltage (V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Chip Select Voltage (V)
FIGURE 2-24:
Quiescent Current vs.
Chip Select (CS) Voltage at VDD = 5.5V
(MCP6283 and MCP6285 only).
2019 Microchip Technology Inc.
MCP6281/1R/2/3/4/5
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to +6.0V, VSS = GND, VCM = VDD/2, VOUT VDD/2,
VL = VDD/2, RL = 10 k to VL, CL = 60 pF and CS is tied low.
5.0
5.0
G = +1V/V
VDD = 5.0V
4.5
Output Voltage (V)
Output Voltage (V)
3.5
3.0
2.5
2.0
1.5
1.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.5
0.0
G = -1V/V
VDD = 5.0V
4.5
4.0
0.E+00
2.E-06
4.E-06
6.E-06
8.E-06
1.E-05
1.E-05
1.E-05
2.E-05
2.E-05
0.0
2.E-05
0.E+00
2.E-06
4.E-06
6.E-06
8.E-06
FIGURE 2-25:
Pulse Response.
Large-Signal, Non-inverting
FIGURE 2-28:
Pulse Response.
Output Voltage (10 mV/div)
Output Voltage (10 mV/div)
G = +1V/V
Small-Signal, Non-inverting
FIGURE 2-29:
Pulse Response.
2.E-05
CS Voltage
2.0
1.5
VOUT
Output On
1.0
0.5
Output High-Z
0.0E+00
5.0E-06
1.0E-05
1.5E-05
2.0E-05
2.5E-05
3.5E-05
4.0E-05
4.5E-05
VDD = 5.5V
G = +1V/V
VIN = VSS
CS Voltage
5.0
4.5
4.0
3.5
VOUT
3.0
2.5
2.0
1.5
1.0
Output High-Z
Output On
0.5
0.E+00
5.E-06
1.E-05
2.E-05
2.E-05
3.E-05
3.E-05
4.E-05
4.E-05
5.E-05
5.E-05
5.0E-05
Time (5 µs/div)
FIGURE 2-27:
Chip Select (CS) to
Amplifier Output Response Time at VDD = 2.2V
(MCP6283 and MCP6285 only).
2019 Microchip Technology Inc.
2.E-05
Small-Signal, Inverting
5.5
0.0
3.0E-05
2.E-05
Large-Signal, Inverting
6.0
VDD = 2.2V
G = +1V/V
VIN = VSS
Chip Select, Output Voltages
(V)
Chip Select, Output Voltages
(V)
1.E-05
Time (500 ns/div)
2.5
0.0
1.E-05
G = -1V/V
Time (500 ns/div)
FIGURE 2-26:
Pulse Response.
1.E-05
Time (2 µs/div)
Time (2 µs/div)
Time (5 µs/div)
FIGURE 2-30:
Chip Select (CS) to
Amplifier Output Response Time at VDD = 5.5V
(MCP6283 and MCP6285 only).
DS20001811F-page 9
MCP6281/1R/2/3/4/5
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to +6.0V, VSS = GND, VCM = VDD/2, VOUT VDD/2,
VL = VDD/2, RL = 10 k to VL, CL = 60 pF and CS is tied low.
6
+125°C
+85°C
+25°C
-40°C
-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
Input Voltage (V)
FIGURE 2-31:
Measured Input Current vs.
Input Voltage (below VSS).
DS20001811F-page 10
Input, Output Voltage (V)
Input Current Magnitude (A)
1.E-02
10m
1.E-03
1m
1.E-04
100µ
1.E-05
10µ
1.E-06
1µ
100n
1.E-07
10n
1.E-08
1n
1.E-09
100p
1.E-10
10p
1.E-11
1p
1.E-12
VDD = 5.0V
G = +2 V/V
5
4
VOUT
VIN
3
2
1
0
-1
-15
-14
-13
-12
-11
-10
-9
-8
-7
-6
-5
Time (1 ms/div)
FIGURE 2-32:
The MCP6281/1R/2/3/4/5
Show No Phase Reversal.
2019 Microchip Technology Inc.
MCP6281/1R/2/3/4/5
3.0
PIN DESCRIPTIONS
Descriptions of the pins are listed in Table 3-1 (single op amps) and Table 3-2 (dual and quad op amps).
TABLE 3-1:
PIN FUNCTION TABLE FOR SINGLE OP AMPS
MCP6281
MCP6281R
MCP6283
PDIP, SOIC,
MSOP
SOT-23-5
SOT-23-5
PDIP, SOIC,
MSOP
SOT-23-6
6
2
3
7
4
—
1,5,8
1
4
3
5
2
—
—
1
4
3
2
5
—
—
6
2
3
7
4
8
1,5
1
4
3
6
2
5
—
TABLE 3-2:
PDIP, SOIC, MSOP
MCP6284
PDIP, SOIC, TSSOP
1
2
3
4
5
6
7
8
9
10
11
12
13
14
—
—
3.1
MCP6285
PDIP, SOIC, MSOP
—
Analog Outputs
The output pins are low-impedance voltage sources.
3.2
Analog Inputs
The non-inverting and inverting inputs are highimpedance CMOS inputs with low bias currents.
3.3
VOUT
VIN–
VIN+
VDD
VSS
CS
NC
Description
Analog Output
Inverting Input
Non-inverting Input
Positive Power Supply
Negative Power Supply
Chip Select
No Internal Connection
PIN FUNCTION TABLE FOR DUAL AND QUAD OP AMPS
MCP6282
1
2
3
8
5
6
7
—
—
—
4
—
—
—
—
Symbol
MCP6285’s VOUTA/VINB+ Pin
For the MCP6285 only, the output of op amp A is
connected directly to the non-inverting input of
op amp B; this is the VOUTA/VINB+ pin. This connection
makes it possible to provide a Chip Select pin for duals
in 8-pin packages.
2019 Microchip Technology Inc.
—
2
3
8
—
6
7
—
—
—
4
—
—
—
1
Symbol
VOUTA
VINA–
VINA+
VDD
VINB+
VINB–
VOUTB
VOUTC
VINC–
VINC+
VSS
VIND+
VIND–
VOUTD
VOUTA/
VINB+
CS
5
3.4
Description
Analog Output (op amp A)
Inverting Input (op amp A)
Non-inverting Input (op amp A)
Positive Power Supply
Non-inverting Input (op amp B)
Inverting Input (op amp B)
Analog Output (op amp B)
Analog Output (op amp C)
Inverting Input (op amp C)
Non-inverting Input (op amp C)
Negative Power Supply
Non-inverting Input (op amp D)
Inverting Input (op amp D)
Analog Output (op amp D)
Analog Output (op amp A)/Noninverting Input (op amp B)
Chip Select
Chip Select Digital Input (CS)
This is a CMOS, Schmitt-triggered input that places the
part into a low-power mode of operation.
3.5
Power Supply Pins
The positive power supply (VDD) is 2.2V to 6.0V higher
than the negative power supply (VSS). For normal
operation, the other pins are between VSS and VDD.
Typically, these parts are used in a single (positive)
supply configuration. In this case, VSS is connected to
ground and VDD is connected to the supply. VDD will
need bypass capacitors.
DS20001811F-page 11
MCP6281/1R/2/3/4/5
4.0
APPLICATION INFORMATION
The MCP6281/1R/2/3/4/5 family of op amps is manufactured using Microchip's state-of-the-art CMOS
process. This family is specifically designed for lowcost, low-power and general purpose applications.
The low supply voltage, low quiescent current and
wide bandwidth makes the MCP6281/1R/2/3/4/5 ideal
for battery-powered applications.
4.1
VDD, and dump any currents onto VDD. When
implemented as shown, resistors R1 and R2 also limit
the current through D1 and D2.
VDD
D1
V1
R1
Rail-to-Rail Inputs
4.1.1
R2
The MCP6281/1R/2/3/4/5 op amp is designed to
prevent phase reversal when the input pins exceed the
supply voltages. Figure 2-32 shows the input voltage
exceeding the supply voltage without any phase
reversal.
4.1.2
R3
VSS – (minimum expected V1)
2 mA
VSS – (minimum expected V2)
R2 >
2 mA
R1 >
INPUT VOLTAGE AND CURRENT
LIMITS
The ESD protection on the inputs can be depicted as
shown in Figure 4-1. This structure was chosen to
protect the input transistors, and to minimize input bias
current (IB). The input ESD diodes clamp the inputs
when they try to go more than one diode drop below
VSS. They also clamp any voltages that go too far
above VDD; their breakdown voltage is high enough to
allow normal operation, and low enough to bypass
quick ESD events within the specified limits.
VDD Bond
Pad
VIN+ Bond
Pad
Input
Stage
Bond
VIN–
Pad
VSS Bond
Pad
FIGURE 4-1:
Structures.
Simplified Analog Input ESD
In order to prevent damage and/or improper operation
of these op amps, the circuit they are in must limit the
currents and voltages at the VIN+ and VIN– pins (see
Absolute Maximum Ratings † at the beginning of
Section 1.0 “Electrical Characteristics”). Figure 4-2
shows the recommended approach to protecting these
inputs. The internal ESD diodes prevent the input pins
(VIN+ and VIN–) from going too far below ground, and
the resistors R1 and R2 limit the possible current drawn
out of the input pins. Diodes D1 and D2 prevent the
input pins (VIN+ and VIN–) from going too far above
DS20001811F-page 12
+
MCP628X
–
V2
PHASE REVERSAL
D2
FIGURE 4-2:
Inputs.
Protecting the Analog
It is also possible to connect the diodes to the left of
resistors R1 and R2. In this case, current through the
diodes D1 and D2 needs to be limited by some other
mechanism. The resistors then serve as in-rush current
limiters; the DC current into the input pins (VIN+ and
VIN–) should be very small.
A significant amount of current can flow out of the
inputs when the common mode voltage (VCM) is below
ground (VSS); see Figure 2-31. Applications that are
high impedance may need to limit the usable voltage
range.
4.1.3
NORMAL OPERATION
The input stage of the MCP6281/1R/2/3/4/5 op amps
use two differential CMOS input stages in parallel. One
operates at low common mode input voltage (VCM),
while the other operates at high VCM. With this
topology, the device operates with VCM up to 0.3V
above VDD and 0.3V below VSS.
There is a transition in input behavior as VCM is
changed. It occurs when VCM is near VDD – 1.2V (see
Figure 2-3 and Figure 2-6). For the best distortion
performance with non-inverting gains, avoid these
regions of operation.
2019 Microchip Technology Inc.
MCP6281/1R/2/3/4/5
4.2
Rail-to-Rail Output
The output voltage range of the MCP6281/1R/2/3/4/5
op amp is VDD – 15 mV (min.) and VSS + 15 mV (max.)
when RL = 10 k is connected to VDD/2 and
VDD = 5.5V. Refer to Figure 2-16 for more information.
After selecting RISO for your circuit, double-check the
resulting frequency response peaking and step
response overshoot. Modify RISO's value until the
response is reasonable. Bench evaluation and simulations with the MCP6281/1R/2/3/4/5 SPICE macro
model are helpful.
4.3
4.4
Capacitive Loads
Driving large capacitive loads can cause stability
problems for voltage feedback op amps. As the load
capacitance increases, the feedback loop’s phase
margin decreases and the closed-loop bandwidth is
reduced. This produces gain peaking in the frequency
response, with overshoot and ringing in the step
response. A unity-gain buffer (G = +1) is the most
sensitive to capacitive loads, though all gains show the
same general behavior.
When driving large capacitive loads with these op
amps (e.g., > 100 pF when G = +1), a small series
resistor at the output (RISO in Figure 4-3) improves the
feedback loop’s phase margin (stability) by making the
output load resistive at higher frequencies. The
bandwidth will generally be lower than the bandwidth
with no capacitive load.
–
RISO
MCP628X
VOUT
+
VIN
CL
MCP628X Chip Select (CS)
The MCP6283 and MCP6285 are single and dual op
amps with Chip Select (CS), respectively. When CS is
pulled high, the supply current drops to 0.7 µA (typical)
and flows through the CS pin to VSS. When this happens, the amplifier output is put into a high-impedance
state. By pulling CS low, the amplifier is enabled. The
CS pin has an internal 5 M (typical) pull-down resistor
connected to VSS, so it will go low if the CS pin is left
floating. Figure 1-1 shows the output voltage and
supply current response to a CS pulse.
4.5
Cascaded Dual Op Amps
(MCP6285)
The MCP6285 is a dual op amp with Chip Select (CS).
The Chip Select input is available on what would be the
non-inverting input of a standard dual op amp (pin 5).
This pin is available because the output of op amp A
connects to the non-inverting input of op amp B, as
shown in Figure 4-5. The Chip Select input, which can
be connected to a microcontroller I/O line, puts the
device in Low-power mode. Refer to Section 4.4
“MCP628X Chip Select (CS)”.
Figure 4-4 gives recommended RISO values for different capacitive loads and gains. The x-axis is the
normalized load capacitance (CL/GN), where GN is the
circuit's noise gain. For non-inverting gains, GN and the
Signal Gain are equal. For inverting gains, GN is
1+|Signal Gain| (e.g., -1 V/V gives GN = +2 V/V).
VINB–
VOUTA/VINB+
FIGURE 4-3:
Output Resistor, RISO
stabilizes large capacitive loads.
1
VINA–
VINA+
2
3
6
–
–
+
+
A
B
7
VOUTB
MCP6285
5
CS
Recommended RISO (:)
1,000
FIGURE 4-5:
The output of op amp A is loaded by the input impedance of op amp B, which is typically 1013||6 pF, as
specified in the DC specification table (Refer to
Section 4.3 “Capacitive Loads” for further details
regarding capacitive loads).
100
GN = 1 V/V
GN = 2 V/V
GN t 4 V/V
10
10
100
1,000
10,000
Normalized Load Capacitance; CL / GN (pF)
FIGURE 4-4:
Recommended RISO Values
for Capacitive Loads.
2019 Microchip Technology Inc.
Cascaded Gain Amplifier.
The common mode input range of these op amps is
specified in the data sheet as VSS – 300 mV and
VDD + 300 mV. However, since the output of op amp A
is limited to VOL and VOH (20 mV from the rails with a
10 k load), the non-inverting input range of op amp B
is limited to the common mode input range of
VSS + 20 mV and VDD – 20 mV.
DS20001811F-page 13
MCP6281/1R/2/3/4/5
4.6
Supply Bypass
VIN–
With this family of operational amplifiers, the power
supply pin (VDD for single-supply) should have a local
bypass capacitor (i.e., 0.01 µF to 0.1 µF) within 2 mm
for good, high-frequency performance. It also needs a
bulk capacitor (i.e., 1 µF or larger) within 100 mm to
provide large, slow currents. This bulk capacitor can be
shared with nearby analog parts.
4.7
Unused Op Amps
VDD
VDD
VREF
R2
FIGURE 4-7:
for Inverting Gain.
1.
¼ MCP6284 (B)
VDD
R1
VSS
Guard Ring
An unused op amp in a quad package (MCP6284)
should be configured as shown in Figure 4-6. These
circuits prevent the output from toggling and causing
crosstalk. Circuits A sets the op amp at its minimum
noise gain. The resistor divider produces any desired
reference voltage within the output voltage range of the
op amp; the op amp buffers that reference voltage.
Circuit B uses the minimum number of components
and operates as a comparator, but it may draw more
current.
¼ MCP6284 (A)
VIN+
2.
Example Guard Ring Layout
For Inverting Gain and Transimpedance
Amplifiers (convert current to voltage, such as
photo detectors):
a.Connect the guard ring to the non-inverting
input pin (VIN+). This biases the guard ring
to the same reference voltage as the op
amp (e.g., VDD/2 or ground).
b.Connect the inverting pin (VIN–) to the input
with a wire that does not touch the PCB
surface.
Non-inverting Gain and Unity-Gain Buffer:
a.Connect the non-inverting pin (VIN+) to the
input with a wire that does not touch the
PCB surface.
b.Connect the guard ring to the inverting input
pin (VIN–). This biases the guard ring to the
common mode input voltage.
R2
V REF = V DD -----------------R1 + R2
FIGURE 4-6:
4.8
Unused Op Amps.
PCB Surface Leakage
In applications where low input bias current is critical,
Printed Circuit Board (PCB) surface-leakage effects
need to be considered. Surface leakage is caused by
humidity, dust or other contamination on the board.
Under low humidity conditions, a typical resistance
between nearby traces is 1012. A 5V difference would
cause 5 pA of current to flow, which is greater than the
MCP6281/1R/2/3/4/5 family’s bias current at +25°C
(1 pA, typical).
The easiest way to reduce surface leakage is to use a
guard ring around sensitive pins (or traces). The guard
ring is biased at the same voltage as the sensitive pin.
An example of this type of layout is shown in
Figure 4-7.
DS20001811F-page 14
2019 Microchip Technology Inc.
MCP6281/1R/2/3/4/5
4.9
Application Circuits
4.9.1
4.9.3
SALLEN-KEY HIGH-PASS FILTER
The MCP6281/1R/2/3/4/5 op amps can be used in
active-filter applications. Figure 4-8 shows a secondorder Sallen-Key high-pass filter with a gain of 1. The
output bias voltage is set by the VDD/2 reference, which
can be changed to any voltage within the output voltage
range.
R1
VIN
C1
+
C2
MCP6281
R2
–
VOUT
VDD/2
FIGURE 4-8:
Sallen-Key High-Pass Filter.
CASCADED OP AMP
APPLICATIONS
The MCP6285 provides the flexibility of Low-power
mode for dual op amps in an 8-pin package. The
MCP6285 eliminates the added cost and space in
battery-powered applications by using two single op
amps with Chip Select lines or a 10-pin device with one
Chip Select line for both op amps. Since the two op
amps are internally cascaded, this device cannot be
used in circuits that require active or passive elements
between the two op amps. However, there are several
applications where this op amp configuration with
Chip Select line becomes suitable. The circuits below
show possible applications for this device.
4.9.3.1
Load Isolation
With the cascaded op amp configuration, op amp B can
be used to isolate the load from op amp A. In applications where op amp A is driving capacitive or low resistance loads in the feedback loop (such as an integrator
circuit or filter circuit), the op amp may not have
sufficient source current to drive the load. In this case,
op amp B can be used as a buffer.
This filter, and others, can be designed using
Microchip’s Design Aids; see Section 5.2 “FilterLab®
Software” and Section 5.3 “Mindi™ Circuit
Designer & Simulator”.
4.9.2
INVERTING MILLER INTEGRATOR
Analog integrators are used in filters, control loops and
measurement circuits. Figure 4-9 shows the most
common implementation, the inverting Miller integrator.
The non-inverting input is at VDD/2 so that the op amp
properly biases up. The switch (SW) is used to zero the
output in some applications. Other applications use a
feedback loop to keep the output within its linear range
of operation.
SW
R
C
VOUT
VIN
+
MCP6281
VDD/2
+
+
A
B
VOUTB
Load
MCP6285
CS
FIGURE 4-10:
Buffer.
4.9.3.2
Isolating the Load with a
Cascaded Gain
Figure 4-11 shows a cascaded gain circuit configuration with Chip Select. Op amps A and B are configured
in a non-inverting amplifier configuration. In this
configuration, it is important to note that the input offset
voltage of op amp A is amplified by the gain of
op amp A and B, as shown below:
V OUT = V IN G A G B + V OSA G A G B + V OSB G B
–
VOUT
1
=
sRC
VIN
FIGURE 4-9:
–
–
Miller Integrator.
Where:
GA
=
op amp A gain
GB
=
op amp B gain
VOSA
=
op amp A input offset voltage
VOSB
=
op amp B input offset voltage
Therefore, it is recommended to set most of the gain
with op amp A and use op amp B with relatively small
gain (e.g., a unity-gain buffer).
2019 Microchip Technology Inc.
DS20001811F-page 15
MCP6281/1R/2/3/4/5
R4
R3
–
+
VIN
R2
–
A
R2
R1
B
+
VOUT
4.9.3.5
Difference Amplifier
VIN1
R2
R2
+
A
VOUT
B
MCP6285
CS
R3
Inverting Integrator with Active
Compensation and Chip Select
Figure 4-14 uses an active compensator (op amp B) to
compensate for the non-ideal op amp characteristics
introduced at higher frequencies. This circuit uses
op amp B as a unity-gain buffer to isolate the integration
capacitor C1 from op amp A and drives the capacitor
with low-impedance source. Since both op amps are
matched very well, they provide a higher quality
integrator.
R1
–
–
+
+
A
R1
B
VOUT
VIN
C1
R1
MCP6285
+
–
+
CS
FIGURE 4-12:
4.9.3.4
–
FIGURE 4-13:
Buffered Non-inverting
Integrator with Chip Select.
Cascaded Gain Circuit
R4
+
RF
R 1 C 1 = R 2 R F C 2
Figure 4-12 shows op amp A configured as a difference
amplifier with Chip Select. In this configuration, it is
recommended to use well-matched resistors (e.g.,
0.1%) to increase the Common Mode Rejection Ratio
(CMRR). Op amp B can be used to provide additional
gain and isolate the load from the difference amplifier.
VIN2
R1
MCP6285
FIGURE 4-11:
Configuration.
–
C1
CS
4.9.3.3
VIN
C2
–
VOUT
A
MCP6285
Difference Amplifier Circuit.
CS
Buffered Non-inverting Integrator
Figure 4-13 shows a lossy non-inverting integrator that
is buffered and has a Chip Select input. Op amp A is
configured as a non-inverting integrator. In this configuration, matching the impedance at each input is
recommended. RF is used to provide a feedback loop
at frequencies