MCP634T-E/STVAO

MCP631/2/3/4/5/9 24 MHz, 2.5 mA Rail-to-Rail Output (RRO) Op Amps Features: Description: • • • • • The Microchip Technology Inc. MCP631/2/3/4/5/9 family of operational amplifiers features high gain bandwidth product (24 MHz, typical) and high output short-circuit current (70 mA, typical). Some also provide a Chip Select (CS) pin that supports a low-power mode of operation. These amplifiers are optimized for high speed, low noise and distortion, single-supply operation with rail-to-rail output and an input that includes the negative rail. • • • • • • Gain-Bandwidth Product: 24 MHz Slew Rate: 10 V/µs Noise: 10 nV/Hz at 1 MHz) Low Input Bias Current: 4 pA (typical) Ease of Use: - Unity-Gain Stable - Rail-to-Rail Output - Input Range including Negative Rail - No Phase Reversal Supply Voltage Range: +2.5V to +5.5V High Output Current: ±70 mA Supply Current: 2.5 mA/ch (typical) Low-Power Mode: 1 µA/ch Small Packages: SOT23-5, DFN Extended Temperature Range: -40°C to +125°C This family is offered in single (MCP631), single with CS pin (MCP633), dual (MCP632), dual with two CS pins (MCP635), quad (MCP634) and quad with two Chip Select pins (MCP639). All devices are fully specified from -40°C to +125°C. Typical Application Circuit Typical Applications: • • • • • • MCP63X 0A – 20 A +5V Fast Low-Side Current Sensing Point-of-Load Control Loops Power Amplifier Control Loops Barcode Scanners Optical Detector Amplifier Multi-Pole Active Filter 51.1 + 0.005 51.1 VOUT - 0V – 4V 2.0 k Design Aids: • • • • • SPICE Macro Models FilterLab® Software Microchip Advanced Part Selector (MAPS) Analog Demonstration and Evaluation Boards Application Notes High Gain-Bandwidth Op Amp Portfolio Model Family Channels/Package Gain-Bandwidth VOS (max.) IQ/Ch (typ.) MCP621/1S/2/3/4/5/9 1, 2, 4 20 MHz 0.2 mV 2.5 mA MCP631/2/3/4/5/9 1, 2, 4 24 MHz 8.0 mV 2.5 mA MCP651/1S/2/3/4/5/9 1, 2, 4 50 MHz 0.2 mV 6.0 mA 1, 2, 3, 4 60 MHz 8.0 mV 6.0 mA MCP660/1/2/3/4/5/9  2009-2014 Microchip Technology Inc. DS20002197C-page 1 MCP631/2/3/4/5/9 Package Types MCP631 SOIC MCP631 2x3 TDFN* NC 1 8 NC VIN– 2 7 VDD VIN+ 3 6 VOUT VSS 4 5 NC NC 1 VIN– 2 VIN+ 3 8 VDD VINA– 2 7 VOUTB VINA– 2 6 VINB- VINA+ 3 5 VINB+ VSS 4 EP 9 7 VDD VSS 2 6 VOUT 5 NC VOUTA 1 VOUTA 1 14 VOUTD VINA- 2 VINA+ 3 VDD 4 13 VIND- VINB+ 5 VINB- 6 10 VINC+ VOUTB 7 8 VOUTC 12 VIND+ 11 VSS 9 VINC- MCP633 SOT-23-6 7 VOUTB 6 VINB– 5 VINB+ VSS 4 4 VIN- VIN+ 3 8 VDD EP 9 MCP634 SOIC, TSSOP 5 VDD VOUT 1 MCP632 3x3 DFN* VOUTA 1 VINA+ 3 8 NC VSS 4 MCP632 SOIC MCP631 SOT-23-5 VOUT 1 VSS 2 VIN+ 3 MCP633 SOIC NC 1 8 CS VIN– 2 7 VDD VIN+ 3 6 VOUT 6 VDD 5 CS VSS 4 4 VIN- 5 NC 9 VOUTB VSS 4 CSA 5 8 VINB7 VINB+ 6 CSB 1 2 3 4 5 EP 11 VIND- VOUTD CSAD 16 15 14 13 10 VDD VINA- 1 9 8 7 6 VINA+ 2 VOUTB VINBVINB+ CSB 12 VIND+ 11 VSS EP 17 VDD 3 10 VINC+ 9 VINC- VINB+ 4 5 6 7 8 VOUTC VINA– 2 VINA+ 3 VOUTA VINA– VINA+ VSS CSA CSBC 10 VDD VINB- VOUTA 1 MCP635 3x3 DFN* VOUTB MCP635 MSOP VOUTA MCP639 4x4 QFN* * Includes Exposed Thermal Pad (EP); see Table 3-1. DS20002197C-page 2  2009-2014 Microchip Technology Inc. MCP631/2/3/4/5/9 1.0 ELECTRICAL CHARACTERISTICS 1.1 Absolute Maximum Ratings † † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. VDD – VSS .......................................................................6.5V Current at Input Pins ....................................................±2 mA Analog Inputs (VIN+ and VIN–) †† . VSS – 1.0V to VDD + 1.0V All other Inputs and Outputs .......... VSS – 0.3V to VDD + 0.3V Output Short-Circuit Current ................................ Continuous Current at Output and Supply Pins ..........................±150 mA Storage Temperature ...................................-65°C to +150°C Maximum Junction Temperature ................................ +150°C ESD protection on all pins (HBM, MM)  1 kV, 200V 1.2 †† See Section 4.1.2 “Input Voltage and Current Limits”. Specifications DC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/3, VOUT  VDD/2, VL = VDD/2, RL = 2 k to VL and CS = VSS (refer to Figure 1-2). Parameters Sym. Min. Typ. Max. Units Conditions Input Offset Input Offset Voltage Input Offset Voltage Drift VOS -8 ±1.8 +8 VOS/TA — ±2.0 — PSRR 61 76 — IB — 4 — pA IB — 100 — pA TA = +85°C TA = +125°C Power Supply Rejection Ratio mV µV/°C TA = -40°C to +125°C dB Input Current and Impedance Input Bias Current Across Temperature IB — 1500 5000 pA Input Offset Current Across Temperature IOS — ±2 — pA Common-Mode Input Impedance ZCM — 1013||9 — ||pF Differential Input Impedance ZDIFF — 1013||2 — ||pF Common-Mode Input Voltage Range VCMR VSS  0.3 — VDD  1.3 V Note 1 Common-Mode Rejection Ratio CMRR 63 78 — dB VDD = 2.5V, VCM = -0.3V to 1.2V 66 81 — dB VDD = 5.5V, VCM = -0.3V to 4.2V Common Mode Open-Loop Gain DC Open-Loop Gain (large signal) AOL 88 115 — dB VDD = 2.5V, VOUT = 0.3V to 2.2V 94 124 — dB VDD = 5.5V, VOUT = 0.3V to 5.2V VSS + 20 — VDD  20 mV VDD = 2.5V, G = +2, 0.5V Input Overdrive VSS + 40 — VDD  40 mV VDD = 5.5V, G = +2, 0.5V Input Overdrive Output Maximum Output Voltage Swing Output Short-Circuit Current VOL, VOH ISC ±40 ±85 ±130 mA VDD = 2.5V (Note 2) ISC ±35 ±70 ±110 mA VDD = 5.5V (Note 2) VDD 2.5 — 5.5 V IQ 1.2 2.5 3.6 mA Power Supply Supply Voltage Quiescent Current per Amplifier Note 1: 2: No Load Current See Figure 2-5 for temperature effects. The ISC specifications are for design guidance only; they are not tested.  2009-2014 Microchip Technology Inc. DS20002197C-page 3 MCP631/2/3/4/5/9 AC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2, VOUT  VDD/2, VL = VDD/2, RL = 2 k to VL, CL = 50 pF and CS = VSS (refer to Figure 1-2). Parameters Sym. Min. Typ. Max. Units MHz Conditions AC Response Gain-Bandwidth Product GBWP — 24 — PM — 65 — ° ROUT — 20 —  THD + N — 0.0015 — % G = +1, VOUT = 2VP-P, f = 1 kHz, VDD = 5.5V, BW = 80 kHz G = +1, VOUT = 100 mVP-P Phase Margin Open-Loop Output Impedance G = +1 AC Distortion Total Harmonic Distortion plus Noise Step Response tr — 20 — ns SR — 10 — V/µs G = +1 Input Noise Voltage Eni — 16 — µVP-P f = 0.1 Hz to 10 Hz Input Noise Voltage Density eni — 10 — nV/Hz f = 1 MHz Input Noise Current Density ini 4 — fA/Hz f = 1 kHz Rise Time, 10% to 90% Slew Rate Noise DIGITAL ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2, VOUT  VDD/2, VL = VDD/2, RL = 2 k to VL, CL = 50 pF and CS = VSS (refer to Figures 1-1 and 1-2). Parameters Sym. Min. Typ. Max. Units Conditions CS Logic Threshold, Low VIL VSS — 0.2VDD V CS Input Current, Low ICSL — 0.1 — nA CS Logic Threshold, High VIH 0.8VDD VDD V CS Input Current, High ICSH — 0.7 — µA GND Current ISS -2 -1 — µA CS Internal Pull-Down Resistor RPD — 5 — M IO(LEAK) — 50 — nA VHYST — 0.25 — V CS High to Amplifier Off Time (output goes High Z) tOFF — 200 — ns G = +1 V/V, VL = VSS, CS = 0.8VDD to VOUT = 0.1(VDD/2) CS Low to Amplifier On Time tON — 2 10 µs G = +1 V/V, VL = VSS, CS = 0.2VDD to VOUT = 0.9(VDD/2) CS Low Specifications CS = 0V CS High Specifications Amplifier Output Leakage CS = VDD CS = VDD, TA = +125°C CS Dynamic Specifications CS Input Hysteresis DS20002197C-page 4  2009-2014 Microchip Technology Inc. MCP631/2/3/4/5/9 TEMPERATURE SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, all limits are specified for: VDD = +2.5V to +5.5V, VSS = GND. Parameters Sym. Min. Typ. Max. Units Conditions Temperature Ranges Specified Temperature Range TA -40 — +125 °C Operating Temperature Range TA -40 — +125 °C Storage Temperature Range TA -65 — +150 °C Note 1 Thermal Package Resistances Thermal Resistance, 5L-SOT-23 θJA — 201.0 — °C/W Thermal Resistance, 6L-SOT-23 θJA — 190.5 — °C/W Thermal Resistance, 8L-2x3 TDFN θJA — 52.5 — °C/W Thermal Resistance, 8L-3x3 DFN θJA — 56.7 — °C/W Thermal Resistance, 8L-SOIC θJA — 149.5 — °C/W Thermal Resistance, 10L-3x3 DFN θJA — 54.0 — °C/W Thermal Resistance, 10L-MSOP θJA — 202 — °C/W Thermal Resistance, 14L-SOIC θJA — 90.8 — °C/W Thermal Resistance, 14L-TSSOP θJA — 100 — °C/W Thermal Resistance, 16L-4x4-QFN θJA — 52.1 — °C/W Timing Diagram ICS Note 2 ISS tOFF High Z High Z On -2.5 mA (typical) -1 µA (typical) FIGURE 1-1: 0.7 µA (typical) VIH VIL tON VOUT EQUATION 1-1: 0.1 nA (typical) 0.7 µA (typical) CS 1.4 Note 2 Operation must not cause TJ to exceed Maximum Junction Temperature specification (+150°C). Measured on a standard JC51-7, four-layer printed circuit board with ground plane and vias. Note 1: 2: 1.3 Note 2 -1 µA (typical) Timing Diagram. Test Circuits The circuit used for most DC and AC tests is shown in Figure 1-2. It independently sets VCM and VOUT; see Equation 1-1. The circuit’s Common-Mode voltage is (VP + VM)/2, not VCM. VOST includes VOS plus the effects of temperature, CMRR, PSRR and AOL.  2009-2014 Microchip Technology Inc. RF G DM = ------RG G N = 1 + G DM 1 1 VCM = V P  1 – ------- + V REF  -------   G N G N VOST = V IN- – V IN+ VOUT = V REF +  V P – V M G DM + VOST G N Where: GDM = Differential Mode Gain GN = Noise Gain (V/V) (V/V) VCM = Op Amp’s Common-Mode Input Voltage VOST = Op Amp’s Total Input Offset Voltage (V) (mV) DS20002197C-page 5 MCP631/2/3/4/5/9 CF 6.8 pF RG 10 k RF 10 k VREF = VDD/2 VP VDD VIN+ CB1 100 nF MCP63X CB2 2.2 µF VINVM RG 10 k RL 2 k RF 10 k CF 6.8 pF VOUT CL 50 pF VL FIGURE 1-2: AC and DC Test Circuit for Most Specifications. DS20002197C-page 6  2009-2014 Microchip Technology Inc. MCP631/2/3/4/5/9 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 2 kto VL, CL = 50 pF and CS = VSS. DC Signal Inputs Percentage of Occurrences 14% 396 Samples TA = +25°C VDD = 2.5V and 5.5V 12% 10% 8% 6% 4% 2% 0% -6 -5 -4 -3 -2 -1 0 1 2 3 Input Offset Voltage (mV) FIGURE 2-1: 14% 12% 5 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2 -2.4 -2.6 -2.8 -3.0 6 Input Offset Voltage. Representative Part VDD = 2.5V VDD = 5.5V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Output Voltage (V) FIGURE 2-4: Output Voltage. 0.0 398 Samples VDD = 2.5V and 5.5V TA = -40°C to +125°C Low Input Common Mode Headroom (V) Percentage of Occurrences 16% 4 Input Offset Voltage (mV) 2.1 10% 8% 6% 4% 2% 0% 1 Lot Low (VCMR_L – VSS) -0.1 -0.2 -0.3 VDD = 2.5V and 5.5V -0.4 -0.5 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 -50 -25 Input Offset Voltage Drift (µV/°C) -2.0 -2.2 -2.4 -2.6 -2.8 -3.0 -3.2 -3.4 -3.6 -3.8 -4.0 Input Offset Voltage Drift. 1.3 Representative Part VCM = VSS +125°C +85°C +25°C -40°C 0 25 50 75 100 Ambient Temperature (°C) 125 FIGURE 2-5: Low-Input Common-Mode Voltage Headroom vs. Ambient Temperature. High Input Common Mode Headroom (V) Input Offset Voltage (mV) FIGURE 2-2: Input Offset Voltage vs. 1 Lot High (VDD – VCMR_H) 1.2 VDD = 2.5V 1.1 1.0 VDD = 5.5V 0.9 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 Power Supply Voltage (V) FIGURE 2-3: Input Offset Voltage vs. Power Supply Voltage with VCM = 0V.  2009-2014 Microchip Technology Inc. -50 -25 0 25 50 75 100 Ambient Temperature (°C) 125 FIGURE 2-6: High-Input Common-Mode Voltage Headroom vs. Ambient Temperature. DS20002197C-page 7 MCP631/2/3/4/5/9 Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 2 kto VL, CL = 50 pF and CS = VSS. 1.5 130 VDD = 2.5V Representative Part DC Open-Loop Gain (dB) Input Offset Voltage (mV) 2.0 +125°C +85°C +25°C -40°C 1.0 0.5 0.0 -0.5 -1.0 -1.5 VDD = 5.5V 120 115 VDD = 2.5V 110 105 100 3.0 2.5 2.0 1.5 1.0 0.5 -0.5 0.0 -2.0 125 -50 -25 Input Common Mode Voltage (V) 1.0 +125°C +85°C +25°C -40°C 0.5 0.0 -0.5 -1.0 -1.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -0.5 -2.0 Input Common Mode Voltage (V) 120 115 VDD = 2.5V 110 105 100 95 100 1.E+02 1.E-08 10n Input Bias, Offset Currents (pA) CMRR, PSRR (dB) VDD = 5.5V 125 1k 10k 1.E+03 1.E+04 Load Resistance (Ω) FIGURE 2-11: Load Resistance. FIGURE 2-8: Input Offset Voltage vs. Common-Mode Voltage with VDD = 5.5V. 110 105 100 95 90 85 80 75 70 65 60 125 130 VDD = 5.5V Representative Part DC Open-Loop Gain (dB) Input Offset Voltage (mV) 1.5 100 FIGURE 2-10: DC Open-Loop Gain vs. Ambient Temperature. FIGURE 2-7: Input Offset Voltage vs. Common-Mode Voltage with VDD = 2.5V. 2.0 0 25 50 75 Ambient Temperature (°C) 100k 1.E+05 DC Open-Loop Gain vs. VDD = 5.5V VCM = VCMR_H 1n 1.E-09 CMRR, VDD = 2.5V CMRR, VDD = 5.5V 100p 1.E-10 IB 10p 1.E-11 PSRR | IOS | 1p 1.E-12 -50 -25 0 25 50 75 Ambient Temperature (°C) 100 FIGURE 2-9: CMRR and PSRR vs. Ambient Temperature. DS20002197C-page 8 125 25 45 65 85 105 Ambient Temperature (°C) 125 FIGURE 2-12: Input Bias and Offset Currents vs. Ambient Temperature with VDD = 5.5V.  2009-2014 Microchip Technology Inc. MCP631/2/3/4/5/9 Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 2 kto VL, CL = 50 pF and CS = VSS. Input Current Magnitude (A) 1.E-03 1m 100µ 1.E-04 10µ 1.E-05 1µ 1.E-06 100n 1.E-07 10n 1.E-08 1n 1.E-09 100p 1.E-10 +125°C +85°C +25°C -40°C 10p 1.E-11 1p 1.E-12 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0 Input Voltage (V) FIGURE 2-13: Input Bias Current vs. Input Voltage (below VSS). 150 IB 100 50 0 IOS -50 -100 -150 Representative Part TA = +85°C VDD = 5.5V 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 -200 0.0 Input Bias, Offset Currents (pA) 200 Common Mode Input Voltage (V) FIGURE 2-14: Input Bias and Offset Currents vs. Common-Mode Input Voltage with TA = +85°C. Input Bias, Offset Currents (pA) 2000 IB 1500 1000 500 IOS 0 -500 -1000 Representative Part TA = +125°C VDD = 5.5V 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -1500 Common Mode Input Voltage (V) FIGURE 2-15: Input Bias and Offset Currents vs. Common-Mode Input Voltage with TA = +125°C.  2009-2014 Microchip Technology Inc. DS20002197C-page 9 MCP631/2/3/4/5/9 Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 2 kto VL, CL = 50 pF and CS = VSS. Other DC Voltages and Currents 3.5 3.0 VDD = 5.5V Supply Current (mA/amplifier) 100 VDD = 2.5V VOL – VSS 10 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 100 Power Supply Voltage (V) FIGURE 2-19: Supply Voltage. Supply Current vs. Power 3.5 RL = 2 kΩ 3.0 Supply Current (mA/amplifier) VOL – VSS VDD = 5.5V VDD = 5.5V 2.5 2.0 VDD = 2.5V 1.5 1.0 0.5 VDD – VOH 6.0 5.5 5.0 4.5 4.0 Common Mode Input Voltage (V) FIGURE 2-17: Output Voltage Headroom vs. Ambient Temperature. 100 80 60 40 20 0 -20 -40 -60 -80 -100 3.5 125 3.0 100 2.5 0.0 0 25 50 75 Ambient Temperature (°C) 2.0 -25 1.5 -50 1.0 VDD = 2.5V -0.5 Output Headroom (mV) 1.0 0.0 1 10 Output Current Magnitude (mA) FIGURE 2-16: Output Voltage Headroom vs. Output Current. FIGURE 2-20: Supply Current vs. Common-Mode Input Voltage. 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 +125°C +85°C +25°C -40°C 0.0 Output Short Circuit Current (mA) +125°C +85°C +25°C -40°C 1.5 0.0 1 20 18 16 14 12 10 8 6 4 2 0 2.0 0.5 VDD – VOH 0.1 2.5 0.5 Output Voltage Headroom (mV) 1000 0.0 2.2 Power Supply Voltage (V) FIGURE 2-18: Output Short-Circuit Current vs. Power Supply Voltage. DS20002197C-page 10  2009-2014 Microchip Technology Inc. MCP631/2/3/4/5/9 Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 2 kto VL, CL = 50 pF and CS = VSS. Frequency Response 34 80 70 60 50 CMRR PSRR+ PSRR- 30 20 55 24 50 22 45 GBWP 0 36 -30 34 100 -60 AOL -90 60 -120 40 -150 | AOL | -180 0 -210 -20 -240 65 60 55 50 22 GBWP 20 -50 -25 0 25 50 75 100 Ambient Temperature (°C) 45 40 125 FIGURE 2-23: Gain-Bandwidth Product and Phase Margin vs. Ambient Temperature.  2009-2014 Microchip Technology Inc. Closed-Loop Output Impedance (Ω) 70 Phase Margin (°) 32 24 6.0 5.5 5.0 4.5 4.0 3.5 60 26 55 24 50 22 45 GBWP 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Output Voltage (V) 80 75 VDD = 5.5V VDD = 2.5V 65 VDD = 5.5V VDD = 2.5V 28 FIGURE 2-25: Gain-Bandwidth Product and Phase Margin vs. Output Voltage. 34 30 70 20 Open-Loop Gain vs. PM 75 PM 30 Frequency (Hz) 36 80 32 1 1.E+1 1M 10M 10 1.E+2 100 1.E+3 1k 1.E+4 10k 100k 1.E+0 1.E+5 1.E+6 1.E+7 100M 1.E+8 FIGURE 2-22: Frequency. 3.0 FIGURE 2-24: Gain-Bandwidth Product and Phase Margin vs. Common-Mode Input Voltage. 120 20 2.5 Common Mode Input Voltage (V) CMRR and PSRR vs. 80 2.0 40 1.5 10M 1.E+7 1.0 1M 1.E+6 0.5 100k 1.E+5 Frequency (Hz) 0.0 10k 1.E+4 Gain Bandwidth Product (MHz) Open-Loop Gain (dB) 60 26 140 Gain Bandwidth Product (MHz) 65 VDD = 5.5V VDD = 2.5V 28 -0.5 1k 1.E+3 FIGURE 2-21: Frequency. 26 70 30 20 10 100 1.E+2 28 75 PM 32 Phase Margin (°) 40 80 Phase Margin (°) 36 90 Gain Bandwidth Product (MHz) 100 Open-Loop Phase (°) CMRR, PSRR (dB) 2.3 100 10 G = 101 V/V G = 11 V/V G = 1 V/V 1 0.1 10k 1.0E+04 100k 1.0E+05 1M 10M 1.0E+06 1.0E+07 Frequency (Hz) 100M 1.0E+08 FIGURE 2-26: Closed-Loop Output Impedance vs. Frequency. DS20002197C-page 11 MCP631/2/3/4/5/9 Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, 10 150 9 140 8 GN = 1 V/V GN = 2 V/V GN  4 V/V 7 6 5 4 3 2 100p 1n 1.0E-10 1.0E-09 Normalized Capacitive Load; CL/GN (F) FIGURE 2-27: Gain Peaking vs. Normalized Capacitive Load. DS20002197C-page 12 RS = 0Ω RS = 100Ω RS = 1 kΩ 130 120 110 VCM = VDD/2 G = +1 V/V 100 90 80 70 60 1 0 10p 1.0E-11 Channel-to-Channel Separation; RTI (dB) Gain Peaking (dB) VL = VDD/2, RL = 2 kto VL, CL = 50 pF and CS = VSS. RS = 10 kΩ RS = 100 kΩ 50 1k 1.E+03 10k 1.E+04 100k 1M 1.E+05 1.E+06 Frequency (Hz) 10M 1.E+07 FIGURE 2-28: Channel-to-Channel Separation vs. Frequency.  2009-2014 Microchip Technology Inc. MCP631/2/3/4/5/9 Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 2 kto VL, CL = 50 pF and CS = VSS. Noise and Distortion 1.E+4 10µ Input Noise; e ni(t) (µV) 20 1.E+3 1µ 1.E+2 100n 10n 1.E+1 1 1.E+0 10 5 0 -5 -10 Analog NPBW = 0.1 Hz Sample Rate = 2 SPS VOS = -3150 µV -15 1k 1.E+3 10k 1.E+4 0 1M 1.E+7 100k 10M 1.E+5 1.E+6 Frequency (Hz) Input Noise Voltage Density 5 10 15 20 25 30 35 40 45 50 55 60 65 Time (min) FIGURE 2-32: 0.1 Hz Filter. THD + Noise (%) V DD = 2.5V VDD = 5.5V 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.0 0.5 FIGURE 2-30: Input Noise Voltage Density vs. Input Common-Mode Voltage with f = 100 Hz. 0.01 0.001 0.0001 100 1.E+2 FIGURE 2-33: VDD = 5.0V VOUT = 2 VP-P 1k 1.E+3 10k 1.E+4 Frequency (Hz) 100k 1.E+5 THD+N vs. Frequency. VDD = 2.5V VDD = 5.5V 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 f = 1 MHz -0.5 Input Noise Voltage Density (nV/Hz) G = 1 V/V G = 11 V/V BW = 22 Hz to > 500 kHz BW = 22 Hz to 80 kHz f = 100 Hz 0.0 0.1 Common Mode Input Voltage (V) 20 18 16 14 12 10 8 6 4 2 0 Input Noise vs. Time with 1 -0.5 Input Noise Voltage Density (nV/Hz) 100 1.E+2 10 1.E+1 FIGURE 2-29: vs. Frequency. 200 180 160 140 120 100 80 60 40 20 0 Representative Part 15 -20 1n 1.E+0 0.1 1.E-1 1.5 Input Noise Voltage Density (V/Hz) 2.4 Common Mode Input Voltage (V) FIGURE 2-31: Input Noise Voltage Density vs. Input Common-Mode Voltage with f = 1 MHz.  2009-2014 Microchip Technology Inc. DS20002197C-page 13 MCP631/2/3/4/5/9 Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 2 kto VL, CL = 50 pF and CS = VSS. 2.5 Time Response 0.0 0.1 VOUT 0.2 Output Voltage (V) FIGURE 2-34: Step Response. 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 Output Voltage (V) VIN 0.3 0.4 0.5 Time (µs) 0.6 0.7 Non-Inverting Small Signal VIN VOUT 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Time (µs) FIGURE 2-37: Response. Inverting Large Signal Step VOUT VDD = 5.5V G=2 6 VOUT 5 VIN 4 3 2 1 0 -1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Time (µs) FIGURE 2-35: Step Response. Non-Inverting Large Signal 0 Slew Rate (V/µs) Output Voltage (10 mV/div) VDD = 5.5V G = -1 RF = 1 kΩ VOUT 0.1 0.2 FIGURE 2-36: Response. DS20002197C-page 14 0.3 0.4 0.5 Time (µs) 0.6 0.7 0.8 Inverting Small Signal Step 1 2 3 4 5 6 Time (ms) 7 8 9 10 FIGURE 2-38: The MCP631/2/3/4/5/9 Family Shows No Input Phase Reversal With Overdrive. VIN 0.0 VDD = 5.5V G = -1 RF = 1 kΩ 7 VDD = 5.5V G=1 VIN 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.8 Input, Output Voltages (V) Output Voltage (10 mV/div) VDD = 5.5V G=1 24 22 20 18 16 14 12 10 8 6 4 2 0 Falling Edge VDD = 5.5V VDD = 2.5V Rising Edge -50 -25 FIGURE 2-39: Temperature. 0 25 50 75 Ambient Temperature (°C) 100 125 Slew Rate vs. Ambient  2009-2014 Microchip Technology Inc. MCP631/2/3/4/5/9 Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 2 kto VL, CL = 50 pF and CS = VSS. Maximum Output Voltage Swing (V P-P ) 10 VDD = 5.5V VDD = 2.5V 1 0.1 100k 1.E+05 1M 10M 1.E+06 1.E+07 Frequency (Hz) 100M 1.E+08 FIGURE 2-40: Maximum Output Voltage Swing vs. Frequency.  2009-2014 Microchip Technology Inc. DS20002197C-page 15 MCP631/2/3/4/5/9 Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 2 kto VL, CL = 50 pF and CS = VSS. Chip Select Response 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.40 CS = VDD 0.35 CS Hysteresis (V) CS Current (µA) 2.6 0.30 0.25 0.15 0.05 0.00 FIGURE 2-41: Supply Voltage. CS Current vs. Power 3.0 -50 2.0 1.5 VOUT 1.0 On 0.5 0.0 Off 100 125 CS Hysteresis vs. Ambient 4 3 VDD = 2.5V 2 1 VDD = 5.5V Off 0 -0.5 2 4 6 8 10 12 Time (µs) 14 16 18 20 FIGURE 2-42: CS and Output Voltages vs. Time with VDD = 2.5V. 6 5 4 3 VOUT 2 On 1 -25 Off Off 0 25 50 75 Ambient Temperature (°C) 100 125 FIGURE 2-45: CS Turn-On Time vs. Ambient Temperature. 8 VDD = 5.5V G=1 VL = 0V CS -50 CS Pull-down Resistor (MΩ) 0 0 0 25 50 75 Ambient Temperature (°C) 5 VDD = 2.5V G=1 VL = 0V CS -25 FIGURE 2-44: Temperature. CS Turn On Time (µs) 2.5 CS, V OUT (V) VDD = 2.5V 0.10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Power Supply Voltage (V) CS, V OUT (V) VDD = 5.5V 0.20 Representative Part 7 6 5 4 3 2 1 0 -1 0 2 4 6 8 10 12 Time (µs) 14 16 18 20 FIGURE 2-43: CS and Output Voltages vs. Time with VDD = 5.5V. DS20002197C-page 16 -50 -25 0 25 50 75 Ambient Temperature (°C) 100 125 FIGURE 2-46: CS Pull-Down Resistor (RPD) vs. Ambient Temperature.  2009-2014 Microchip Technology Inc. MCP631/2/3/4/5/9 Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, CS = VDD 1.E-06 1µ Output Leakage Current (A) 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2 CS = VDD = 5.5V 100n 1.E-07 10n 1.E-08 1n 1.E-09 +125°C +85°C Power Supply Voltage (V) FIGURE 2-47: Quiescent Current in Shutdown vs. Power Supply Voltage.  2009-2014 Microchip Technology Inc. 6.5 6.0 5.5 5.0 4.5 4.0 100p 1.E-10 3.5 3.0 2.5 2.0 1.5 1.0 0.5 -40°C +25°C +85°C +125°C 0.0 Negative Power Supply Current; I SS (µA) VL = VDD/2, RL = 2 kto VL, CL = 50 pF and CS = VSS. +25°C 10p 1.E-11 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Output Voltage (V) FIGURE 2-48: Output Voltage. Output Leakage Current vs. DS20002197C-page 17 MCP631/2/3/4/5/9 3.0 PIN DESCRIPTIONS Descriptions of the pins are listed in Table 3-1. MCP639 MCP635 MCP634 MCP633 SOT 2x3 3x3 SOT3x3 SOIC SOIC SOIC TSSOP MSOP QFN -23 TDFN DFN 23 DFN Symbol SOIC MCP632 PIN FUNCTION TABLE MCP631 TABLE 3-1: Description 2 4 2 2 2 2 4 2 2 2 2 1 VIN-, VINA- Inverting Input (op amp A) 3 3 3 3 3 3 3 3 3 3 3 2 VIN+, VINA+ Non-Inverting Input (op amp A) 7 5 7 8 8 7 6 4 4 10 10 3 VDD Positive Power Supply — — — 5 5 — — 5 5 7 7 4 VINB+ Non-Inverting Input (op amp B) — — — 6 6 — — 6 6 8 8 5 VINB- Inverting Input (op amp B) — — — 7 7 — — 7 7 9 9 6 VOUTB Output (op amp B) — — — — — — — — — — — 7 CSBC Chip Select Digital Input (op amp B and C) — — — — — — — 8 8 — — 8 VOUTC Output (op amp C) — — — — — — — 9 9 — — 9 VINC- Inverting Input (op amp C) — — — — — — — 10 10 — — 10 VINC+ Non-Inverting Input (op amp C) 4 2 4 4 4 4 2 11 11 4 4 11 VSS Negative Power Supply — — — — — — — 12 12 — — 12 VIND+ Non-Inverting Input (op amp D) — — — — — — — 13 13 — — 13 VIND- Inverting Input (op amp D) — — — — — — — 14 14 — — 14 VOUTD Output (op amp D) — — — — — — — — — — — 15 CSAD Chip Select Digital Input (op amp A and D) 6 1 6 1 1 6 1 1 1 1 1 16 VOUT, VOUTA Output (op amp A) — — 9 — 9 — — — — — 11 17 EP — — — — — 8 5 — — 5 5 — — — — — — — — — — 6 6 — CSB Chip Select Digital Input (op amp B) 1,5, 8 — 1, 5, 8 — — 1, 5 — — — — — — NC No Internal Connection DS20002197C-page 18 Exposed Thermal Pad (EP); must be connected to VSS CS, CSA Chip Select Digital Input (op amp A)  2009-2014 Microchip Technology Inc. MCP631/2/3/4/5/9 3.1 Analog Outputs The analog output pins (VOUT) are low-impedance voltage sources. 3.2 Analog Inputs The non-inverting and inverting inputs (VIN+, VIN-, …) are high-impedance CMOS inputs with low bias currents. 3.3 Power Supply Pins The positive power supply (VDD) is 2.5V to 5.5V higher than the negative power supply (VSS). For normal operation, the other pins are between VSS and VDD. 3.4 Chip Select Digital Input (CS) This input (CS) is a CMOS, Schmitt-triggered input that places the part into a low-power mode of operation. 3.5 Exposed Thermal Pad (EP) There is an internal connection between the exposed thermal pad (EP) and the VSS pin; they must be connected to the same potential on the printed circuit board (PCB). This pad can be connected to a PCB ground plane to provide a larger heat sink. This improves the package thermal resistance (JA). Typically, these parts are used in a single (positive) supply configuration. In that case, VSS is connected to ground and VDD is connected to the supply. VDD will need bypass capacitors.  2009-2014 Microchip Technology Inc. DS20002197C-page 19 MCP631/2/3/4/5/9 4.0 APPLICATIONS The MCP631/2/3/4/5/9 family is manufactured using the Microchip state-of-the-art CMOS process. It is designed for low-cost, low-power and high-speed applications. Its low supply voltage, low quiescent current and wide bandwidth make the MCP631/2/3/4/5/9 ideal for battery-powered applications. 4.1 When implemented as shown, resistors R1 and R2 also limit the current through D1 and D2. VDD V1 V2 Input 4.1.1 PHASE REVERSAL INPUT VOLTAGE AND CURRENT LIMITS The electrostatic discharge (ESD) protection on the inputs can be depicted as shown in Figure 4-1. This structure was chosen to protect the input transistors and to minimize input bias current (IB). The input ESD diodes clamp the inputs when they try to go more than one diode drop below VSS. They also clamp any voltages that go too far above VDD; their breakdown voltage is high enough to allow normal operation and low enough to bypass quick ESD events within the specified limits. VDD VIN+ Bond Pad Input Stage Bond V IN Pad R2 FIGURE 4-2: Inputs. Protecting the Analog It is also possible to connect the diodes to the left of the resistors R1 and R2. If so, the currents through the diodes D1 and D2 need to be limited by some other mechanism. The resistors then serve as in-rush current limiters; the DC current into the input pins (VIN+ and VIN-) should be very small. A significant amount of current can flow out of the inputs (through the ESD diodes) when the Common-Mode voltage (VCM) is below ground (VSS); see Figure 2-13. Applications that are high-impedance may need to limit the usable voltage range. NORMAL OPERATION The input stage of the MCP631/2/3/4/5/9 op amps uses a differential PMOS input stage. It operates at low Common-Mode input voltages (VCM), with VCM between VSS – 0.3V and VDD – 1.3V. To ensure proper operation, the input offset voltage (VOS) is measured at both VCM = VSS – 0.3V and VCM = VDD – 1.3V. See Figures 2-5 and 2-6 for temperature effects. Simplified Analog Input ESD In order to prevent damage and/or improper operation of these amplifiers, the circuit must limit the currents (and voltages) at the input pins (see Section 1.1 “Absolute Maximum Ratings †”). Figure 4-2 shows the recommended approach to protecting these inputs. The internal ESD diodes prevent the input pins (VIN+ and VIN-) from going too far below ground, while the resistors R1 and R2 limit the possible current drawn out of the input pins. Diodes D1 and D2 prevent the input pins (VIN+ and VIN-) from going too far above VDD and dump any currents onto VDD. DS20002197C-page 20 VOUT When operating at very low non-inverting gains, the output voltage is limited at the top by the VCM range (< VDD – 1.3V); see Figure 4-3. VSS Bond Pad FIGURE 4-1: Structures. MCP63X V SS –  minimum expected V2  R2  -----------------------------------------------------------------------2 mA 4.1.3 Bond Pad D2 V SS –  minimum expected V1  R1  -----------------------------------------------------------------------2 mA The input devices are designed to exhibit no phase inversion when the input pins exceed the supply voltages. Figure 2-38 shows an input voltage exceeding both supplies with no phase inversion. 4.1.2 D1 R1 VDD VIN + - MCP63X VOUT V SS  V IN V OUT  V DD – 1.3V FIGURE 4-3: Unity-Gain Voltage Limitations for Linear Operation.  2009-2014 Microchip Technology Inc. MCP631/2/3/4/5/9 4.2 Rail-to-Rail Output 4.2.1 Figure 4-5 shows the power calculations used for a single op amp: MAXIMUM OUTPUT VOLTAGE The maximum output voltage (see Figures 2-16 and 2-17) describes the output range for a given load. For instance, the output voltage swings to within 50 mV of the negative rail with a 1 k load tied to VDD/2. 4.2.2 OUTPUT CURRENT • RSER is 0 in most applications and can be used to limit IOUT. • VOUT is the op amp’s output voltage. • VL is the voltage at the load. • VLG is the load’s ground point. • VSS is usually ground (0V). The input currents are assumed to be negligible. The currents shown in Figure 4-5 can be approximated using Equation 4-1: IOUT is positive when it flows out of the op amp into the external circuit. EQUATION 4-1: V OUT – V LG I OUT = IL = -----------------------------R SER + R L VOH Limited (VDD = 5.5V) RL = 1 kΩ -ISC Limited RL = 100Ω RL = 10Ω I DD  I Q + max  0, IOUT  I SS  – I Q + min  0, IOUT  +ISC Limited 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -0.5 Where: IQ = Quiescent supply current 120 80 100 60 40 0 20 -20 -40 IOUT (mA) FIGURE 4-4: 4.2.3 -60 -100 -80 VOL Limited -120 VOUT (V) Figure 4-4 shows the possible combinations of output voltage (VOUT) and output current (IOUT), when VDD = 5.5V. EQUATION 4-2: Output Current. POA(t) = IDD (VDD – VOUT) + ISS (VSS – VOUT) POWER DISSIPATION Since the output short-circuit current (ISC) is specified at ±70 mA (typical), these op amps are capable of both delivering and dissipating significant power. PRSER(t) = IOUT2RSER PL(t) = IL2RL The maximum op amp power, for resistive loads, occurs when VOUT is halfway between VDD and VLG or halfway between VSS and VLG. VDD VOUT IDD IOUT + - The instantaneous op amp power (POA(t)), RSER power (PRSER(t)) and load power (PL(t)) are: MCP63X EQUATION 4-3: 2 VL IL ISS RL VLG VSS FIGURE 4-5: Calculations. max  V DD – V LG V LG – V SS  P OAmax  ------------------------------------------------------------------------4  RSER + RL  RSER Diagram for Power The maximum ambient to junction temperature rise (TJA) and junction temperature (TJ) can be calculated using POAmax, the ambient temperature (TA), the package thermal resistance (JA, found in the Temperature Specifications table) and the number of op amps in the package (assuming equal power dissipations), as shown in Equation 4-4: EQUATION 4-4: TJA = POA  t   JA  nP OAmax  JA T J = T A + T JA Where: n =  2009-2014 Microchip Technology Inc. Number of op amps in the package (1, 2) DS20002197C-page 21 MCP631/2/3/4/5/9 The power derating across temperature for an op amp in a particular package can be easily calculated (assuming equal power dissipations): EQUATION 4-5: T Jmax – T A P OAmax  -------------------------n  JA TJmax = Absolute maximum junction temperature Several techniques are available to reduce TJA for a given POAmax: • Lower JA - Use another package - PCB layout (ground plane, etc.) - Heat sinks and air flow • Reduce POAmax - Increase RL - Limit IOUT (using RSER) - Decrease VDD 4.3.1 GN = +1 GN  +2 100p 1n 1.E-11 1.E-10 1.E-09 Normalized Capacitance; CL/GN (F) 10n 1.E-08 FIGURE 4-7: Recommended RISO Values for Capacitive Loads. After selecting RISO, double-check the resulting frequency response peaking and step response overshoot. Modify the value of RISO until the response is reasonable. Bench evaluation and simulations with the MCP631/2/3/4/5/9 SPICE macro model are helpful. CAPACITIVE LOADS Driving large capacitive loads can cause stability problems for voltage feedback op amps. As the load capacitance increases, the phase margin (stability) of the feedback loop decreases and the closed-loop bandwidth is reduced. This produces gain peaking in the frequency response, with overshoot and ringing in the step response. A unity-gain buffer (G = +1) is the most sensitive to capacitive loads, though all gains show the same general behavior. When driving large capacitive loads with these op amps (e.g., > 20 pF when G = +1), a small series resistor at the output (RISO in Figure 4-6) improves the phase margin of the feedback loop by making the output load resistive at higher frequencies. The bandwidth will be generally lower than the bandwidth with no capacitive load. RF 100 10 10p 1.E-12 Improving Stability RG Recommended R ISO (Ω) 1,000 Where: 4.3 Figure 4-7 gives recommended RISO values for different capacitive loads and gains. The x-axis is the normalized load capacitance (CL/GN), where GN is the circuit’s noise gain. For non-inverting gains, GN and the Signal Gain are equal. For inverting gains, GN is 1 + |Signal Gain| (e.g., -1 V/V gives GN = +2 V/V). 4.3.2 GAIN PEAKING Figure 4-8 shows an op amp circuit that represents non-inverting amplifiers (VM is a DC voltage and VP is the input) or inverting amplifiers (VP is a DC voltage and VM is the input). The capacitances CN and CG represent the total capacitance at the input pins; they include the op amp’s Common-Mode input capacitance (CCM), board parasitic capacitance and any capacitor placed in parallel. VP RN CN + MCP63X VOUT - VM RISO RG CG RF VOUT + RN CL MCP63X FIGURE 4-6: Output Resistor, RISO, Stabilizes Large Capacitive Loads. FIGURE 4-8: Capacitance. Amplifier with Parasitic CG acts in parallel with RG (except for a gain of +1 V/V), which causes an increase in gain at high frequencies. CG also reduces the phase margin of the feedback loop, which becomes less stable. This effect can be reduced by either reducing CG or RF. CN and RN form a low-pass filter that affects the signal at VP. This filter has a single real pole at 1/(2RNCN). DS20002197C-page 22  2009-2014 Microchip Technology Inc. MCP631/2/3/4/5/9 1.E+05 100k CG = 10 pF CG = 32 pF CG = 100 pF CG = 320 pF CG = 1 nF Maximum Recommended R (Ω) F The largest value of RF that should be used depends on the noise gain (see GN in Section 4.3.1 “Capacitive Loads”), CG and the open-loop gain’s phase shift. Figure 4-9 shows the maximum recommended RF for several CG values. Some applications may modify these values to reduce either output loading or gain peaking (step response overshoot). 10k 1.E+04 1k 1.E+03 GN > +1 V/V 100 1.E+02 1 10 Noise Gain; GN (V/V) FIGURE 4-9: RF vs. Gain. 100 Maximum Recommended Figures 2-34 and 2-35 show the small signal and large signal step responses at G = +1 V/V. The unity-gain buffer usually has RF = 0 and RG open. Figures 2-36 and 2-37 show the small signal and large signal step responses at G = -1 V/V. Since the noise gain is 2 V/V and CG  10 pF, the resistors were chosen to be RF = RG = 1 k and RN = 500. It is also possible to add a capacitor (CF) in parallel with RF to compensate for the destabilizing effect of CG. This makes it possible to use larger values of RF. The conditions for stability are summarized in Equation 4-6. EQUATION 4-6: Given: 4.4 MCP633, MCP635 and MCP639 Chip Select The MCP633 is a single amplifier with Chip Select (CS). When CS is pulled high, the supply current drops to 1 µA (typical) and flows through the CS pin to VSS. When this happens, the amplifier output is put into a high-impedance state. By pulling CS low, the amplifier is enabled. The CS pin has an internal 5 M (typical) pull-down resistor connected to VSS, so it will go low if the CS pin is left floating. Figures 1-1, 2-42 and 2-43 show the output voltage and supply current response to a CS pulse. The MCP635 is a dual amplifier with two CS pins; CSA controls op amp A and CSB controls op amp B. These op amps are controlled independently, with an enabled quiescent current (IQ) of 2.5 mA/amplifier (typical) and a disabled IQ of 1 µA/amplifier (typical). The IQ seen at the supply pins is the sum of the two op amps’ IQ; the typical value for the IQ of the MCP635 will be 2 µA, 2.5 mA or 5 mA when there are 0, 1 or 2 amplifiers enabled, respectively. The MCP639 is a quad amplifier with two CS pins; CSB controls op amp B and CSD controls op amp D. 4.5 Power Supply With this family of operational amplifiers, the Power Supply pin (VDD for single supply) should have a local bypass capacitor (i.e., 0.01 µF to 0.1 µF) within 2 mm for good high-frequency performance. Surface mount, multilayer ceramic capacitors, or their equivalent, should be used. These op amps require a bulk capacitor (i.e., 2.2 µF or larger) within 50 mm to provide large, slow currents. Tantalum capacitors, or their equivalent, may be a good choice. This bulk capacitor can be shared with other nearby analog parts as long as crosstalk through the supplies does not prove to be a problem. RF G N1 = 1 + ------RG CG G N2 = 1 + ------CF 1 f F = --------------------2  RF C F G N1 f Z = f F  ----------  G N2 We need: f GBWP fF  ---------------, G N1  G N2 2G N2 f GBWP fF  ---------------, G N1  G N2 4G N1  2009-2014 Microchip Technology Inc. DS20002197C-page 23 MCP631/2/3/4/5/9 4.6 High-Speed PCB Layout 4.7.2 These op amps are fast enough that a little extra care in the printed circuit board (PCB) layout can make a significant difference in performance. Good PCB layout techniques will help achieve the performance shown in the specifications and typical performance curves; it will also help minimize electromagnetic compatibility (EMC) issues. Use a solid ground plane. Connect the bypass local capacitor(s) to this plane with minimal length traces. This cuts down inductive and capacitive crosstalk. OPTICAL DETECTOR AMPLIFIER Figure 4-11 shows a transimpedance amplifier, using the MCP63X op amp, in a photo detector circuit. The photo detector is a capacitive current source. RF provides enough gain to produce 10 mV at VOUT. CF stabilizes the gain and limits the transimpedance bandwidth to about 1.1 MHz. The parasitic capacitance of RF (e.g., 0.2 pF for a 0805 SMD) acts in parallel with CF. CF 1.5 pF Separate digital from analog, low-speed from high-speed, and low-power from high-power. This will reduce interference. Keep sensitive traces short and straight. Separate them from interfering components and traces. This is especially important for high-frequency (low rise time) signals. Sometimes, it helps to place guard traces next to victim traces. They should be on both sides of the victim trace and as close as possible. Connect guard traces to ground plane at both ends and in the middle for long traces. Use coax cables, or low-inductance wiring, to route signal and power to and from the PCB. Mutual and self-inductance of power wires is often a cause of crosstalk and unusual behavior. 4.7 Photo Detector ID 100 nA RF 100 k CD 30 pF + POWER DRIVER WITH HIGH GAIN MCP632 VDD/2 FIGURE 4-11: Transimpedance Amplifier for an Optical Detector. 4.7.3 H-BRIDGE DRIVER Figure 4-12 shows the MCP632 dual op amp used as a H-bridge driver. The load could be a speaker or a DC motor. Typical Applications 4.7.1 VOUT VIN + ½ MCP633 - Figure 4-10 shows a power driver with high gain (1 + R2/R1). The short-circuit current of the MCP631/2/3/4/5/9 op amps makes it possible to drive significant loads. The calibrated input offset voltage supports accurate response at high gains. R3 should be small and equal to R1||R2 in order to minimize the bias current induced offset. RF RF VOT RL RGT RGB RF VOB - VDD/2 R1 R3 VIN FIGURE 4-10: DS20002197C-page 24 R2 VOUT + RL MCP63X Power Driver. VDD/2 FIGURE 4-12: + ½ MCP633 H-Bridge Driver. This circuit automatically makes the noise gains (GN) equal when the gains are set properly, so that the frequency responses match well (in magnitude and in phase). Equation 4-7 shows how to calculate RGT and RGB so that both op amps have the same DC gains; GDM needs to be selected first.  2009-2014 Microchip Technology Inc. MCP631/2/3/4/5/9 EQUATION 4-7: VOT – V OB GDM  --------------------------  1 V/V VDD V IN – ----------2 RF R GT = --------------------G DM ------------ – 1 2 RF R GB = -----------G DM -----------2 Equation 4-8 gives the resulting Common-Mode and Differential mode output voltages. EQUATION 4-8: VOT + V OB V DD --------------------------- = ----------2 2 VDD V OT – V OB = GDM  V IN – ----------- 2  2009-2014 Microchip Technology Inc. DS20002197C-page 25 MCP631/2/3/4/5/9 5.0 DESIGN AIDS Microchip provides the basic design aids needed for the MCP631/2/3/4/5/9 family of op amps. 5.1 SPICE Macro Model The latest SPICE macro model for the MCP631/2/3/4/5/9 op amps is available on the Microchip web site at www.microchip.com. This model is intended to be an initial design tool that works well in the linear region of operation over the temperature range of the op amp. See the model file for information on its capabilities. Bench testing is a very important part of any design and cannot be replaced with simulations. Also, simulation results using this macro model need to be validated by comparing them to the data sheet specifications and characteristic curves. 5.2 FilterLab® Software Microchip’s FilterLab® software is an innovative software tool that simplifies analog active filter (using op amps) design. Available at no cost from the Microchip web site at www.microchip.com/filterlab, the FilterLab design tool provides full schematic diagrams of the filter circuit with component values. It also outputs the filter circuit in SPICE format, which can be used with the macro model to simulate actual filter performance. 5.3 Microchip Advanced Part Selector (MAPS) MAPS is a software tool that helps efficiently identify Microchip devices that fit a particular design requirement. Available at no cost from the Microchip web site at www.microchip.com/maps, the MAPS is an overall selection tool for Microchip’s product portfolio that includes Analog, Memory, MCUs and DSCs. Using this tool, a filter can be defined to sort features for a parametric search of devices and export side-by-side technical comparison reports. Helpful links are also provided for data sheets, purchase and sampling of Microchip parts. DS20002197C-page 26 5.4 Analog Demonstration and Evaluation Boards Microchip offers a broad spectrum of analog demonstration and evaluation boards that are designed to help customers achieve faster time to market. For a complete listing of these boards and their corresponding user’s guides and technical information, visit the Microchip web site at www.microchip.com/analog tools. Some boards that are especially useful are: • MCP6XXX Amplifier Evaluation Board 1, part number: MCP6XXXEV-AMP1 • MCP6XXX Amplifier Evaluation Board 2, part number: MCP6XXXEV-AMP2 • MCP6XXX Amplifier Evaluation Board 3, part number: MCP6XXXEV-AMP3 • MCP6XXX Amplifier Evaluation Board 4, part number: MCP6XXXEV-AMP4 • Active Filter Demo Board Kit, part number: MCP6XXXDM-FLTR • 8-Pin SOIC/MSOP/TSSOP/DIP Evaluation Board, part number: SOIC8EV 5.5 Application Notes The following Microchip Analog Design Note and Application Notes are available on the Microchip web site at www.microchip.com/appnotes and are recommended as supplemental reference resources. • ADN003: “Select the Right Operational Amplifier for your Filtering Circuits”, DS21821 • AN722: “Operational Amplifier Topologies and DC Specifications”, DS00722 • AN723: “Operational Amplifier AC Specifications and Applications”, DS00723 • AN884: “Driving Capacitive Loads With Op Amps”, DS00884 • AN990: “Analog Sensor Conditioning Circuits – An Overview”, DS00990 • AN1228: “Op Amp Precision Design: Random Noise”, DS01228 Some of these application notes, and others, are listed in the “Signal Chain Design Guide”, DS21825.  2009-2014 Microchip Technology Inc. MCP631/2/3/4/5/9 6.0 PACKAGING INFORMATION 6.1 Package Marking Information Example 5-Lead SOT-23 (MCP631) XXNN YV25 6-Lead SOT-23 (MCP633) Example XXNN JC25 8-Lead TDFN (2x3x0.75 mm) (MCP631) Example ABK 425 25 8-Lead DFN (3x3x0.9 mm) (MCP632) Device Code MCP632T-E/MF DABM Note 1: Legend: XX...X Y YY WW NNN e3 * Note: Example DABM 1425 256 Applies to 8-lead 3x3 DFN Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC® designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information.  2009-2014 Microchip Technology Inc. DS20002197C-page 27 MCP631/2/3/4/5/9 8-Lead SOIC (3.90 mm) (MCP631, MCP632) Example MCP631E e3 SN^^1425 256 NNN 10-Lead DFN (3x3x0.9 mm) (MCP635) Example Device Code MCP635T-E/MF BAFB Note 1: 10-Lead MSOP (3x3 mm) (MCP635) BAFB 1425 256 Applies to 10-lead 3x3 DFN Example 665EUN 425256 Legend: XX...X Y YY WW NNN e3 * Note: DS20002197C-page 28 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC® designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information.  2009-2014 Microchip Technology Inc. MCP631/2/3/4/5/9 14-Lead SOIC (3.90 mm) (MCP634) Example MCP634 e3 E/SL^^ 1425256 14-Lead TSSOP (4.4 mm) (MCP634) Example XXXXXXXX YYWW NNN 634E/ST 1425 256 16-Lead QFN (4x4x0.9 mm) (MCP639) PIN 1 PIN 1 Legend: XX...X Y YY WW NNN e3 * Note: Example 639 e3 E/ML^^ 1425256 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC® designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. 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