MCP6401/1R/1U/2/4/6/7/9
1 MHz, 45 µA Op Amps
Features
Description
•
•
•
•
•
•
The
Microchip
Technology
Inc.
MCP6401/1R/1U/2/4/6/7/9 family of operational
amplifiers (op amps) has low quiescent current
(45 µA, typical) and rail-to-rail input and output
operation. This family is unity gain stable and has a
gain bandwidth product of 1 MHz (typical). These
devices operate with a power supply voltage of 1.8V to
6.0V. These features make the family of op amps well
suited for single-supply, battery-powered applications.
Low Quiescent Current: 45 µA (typical)
Gain Bandwidth Product: 1 MHz (typical)
Rail-to-Rail Input and Output
Supply Voltage Range: 1.8V to 6.0V
Unity Gain Stable
Extended Temperature Ranges:
- -40°C to +125°C (E temp)
- -40°C to +150°C (H temp)
• No Phase Reversal
The MCP6401/1R/1U/2/4/6/7/9 family is designed with
Microchip’s advanced CMOS process and offered in
single, dual and quad packages. The devices are
available in two extended temperature ranges (E temp
and H temp) with different package types, which
makes them well-suited for automotive and industrial
applications.
Applications
•
•
•
•
•
•
•
Portable Equipment
Battery Powered System
Medical Instrumentation
Automotive Electronics
Data Acquisition Equipment
Sensor Conditioning
Analog Active Filters
Design Aids
•
•
•
•
•
SPICE Macro Models
FilterLab® Software
Microchip Advanced Part Selector (MAPS)
Analog Demonstration and Evaluation Boards
Application Notes
Typical Application
R2
D2
VIN
R1
VOUT
MCP6401
D1
Precision Half-Wave Rectifier
© 2009-2011 Microchip Technology Inc.
DS22229D-page 1
MCP6401/1R/1U/2/4/6/7/9
E Temp Package Types
MCP6401
H Temp Package Types
MCP6401R
SC70-5, SOT-23-5
VOUT 1
SOT-23-5
5 VDD
VOUT 1
VSS 2
5 VSS
VDD 2
VIN+ 3
4 VIN–
VIN+ 3
4 VIN–
MCP6402
MCP6401U
SOIC
SOT-23-5
VOUTA 1
8 VDD
VINA– 2
7 VOUTB VSS 2
6 VINB– VIN– 3
VINA+ 3
VSS 4
VIN+ 1
5 VDD
4 VOUT
5 VINB+
MCP6404
2x3 TDFN
SOIC, TSSOP
VOUTA 1
8 VDD
VINA– 2
V –
7 VOUTB INA 2
V +
6 VINB– INA 3
5 V + VDD 4
13 VIND–
VINB+ 5
10 VINC+
VINB– 6
VOUTB 7
9 VINC–
VSS 4
SOT-23-5
SOIC
VOUT 1
5 VDD VOUTA 1
VSS 2
VINA– 2
VIN+ 3
4 VIN– V + 3
INA
6 VINB–
VSS 4
5 VINB+
INB
8 VDD
7 VOUTB
MCP6404
MCP6406
SOIC
SOT-23-5
14 VOUTD VOUT 1
VSS 2
13 V –
5 VDD
VINA– 2
VINA+ 3
12 VIND+
VIN+ 3
4 VIN–
VOUTA 1
IND
11 VSS
VINB+ 5
10 VINC+
VINB– 6
VOUTB 7
9 VINC–
8 VOUTC
14 VOUTD
VOUTA 1
VINA+ 3
MCP6402
VDD 4
MCP6402
EP
9
MCP6401
12 VIND+
11 VSS
8 VOUTC
VOUTA 1
VINA– 2
VINA+ 3
VSS 4
MCP6407
MCP6409
SOIC
SOIC
8 VDD VOUTA 1
VINA– 2
7 V
14 VOUTD
6 VINB– VINA+ 3
5 V + VDD 4
12 VIND+
VINB+ 5
10 VINC+
VINB– 6
9 VINC–
8 VOUTC
OUTB
INB
* Includes Exposed Thermal Pad (EP); see Table 3-1.
E temp: -40°C to +125°C
VOUTB 7
13 VIND–
11 VSS
H temp: -40°C to +150°C
DS22229D-page 2
© 2009-2011 Microchip Technology Inc.
MCP6401/1R/1U/2/4/6/7/9
1.0
ELECTRICAL
CHARACTERISTICS
1.1
Absolute Maximum Ratings †
† Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at those or any other conditions
above those indicated in the operational listings of this
specification is not implied. Exposure to maximum rating conditions for extended periods may affect device
reliability.
VDD – VSS ........................................................................7.0V
Current at Input Pins .....................................................±2 mA
Analog Inputs (VIN+, VIN-)†† .......... VSS – 1.0V to VDD + 1.0V
†† See Section 4.1.2 “Input Voltage Limits”.
All Other Inputs and Outputs ......... VSS – 0.3V to VDD + 0.3V
Difference Input Voltage ...................................... |VDD – VSS|
Output Short-Circuit Current ................................ Continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature ....................................-65°C to +150°C
Maximum Junction Temperature (TJ) .......................... +155°C
ESD Protection on All Pins (HBM; MM; CDM)....≥ 4 kV; 300V,
1500V
1.2
MCP6401/1R/1U/2/4 Electrical Specifications
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8v to +6.0v, VSS = GND,
VCM = VDD/2, VOUT ≈ VDD/2, VL = VDDD/2 and RL = 100 kΩ to VL (Refer to Figure 1-1).
Parameters
Units
Temp
Parts
(Note 1)
Sym
Min
Typ
Max
VOS
-4.5
±0.8
+4.5
mV
—
±1.0
—
mV
+125°C
E
—
±1.5
—
mV
+150°C
H
—
±2.0
—
µV/°C
-40°C
to
+125°C
E
—
±2.5
—
µV/°C
-40°C
to
+150°C
H
63
78
—
dB
—
75
—
dB
+125°C
E
—
73
—
dB
+150°C
H
—
1
100
pA
Conditions
Input Offset
Input Offset Voltage
Input Offset Drift with
Temperature
Power Supply
Rejection Ratio
ΔVOS/ΔTA
PSRR
E, H
E, H
VCM = VSS
VCM = VSS
VCM = VSS
Input Bias Current and Impedance
Input Bias Current
Input Offset Current
Note 1:
2:
IB
IOS
E, H
—
30
—
pA
+85°C
E, H
—
800
—
pA
+125°C
E
—
7
—
nA
+150°C
—
1
—
pA
H
E, H
—
5
—
pA
+85°C
—
20
—
pA
+125°C
E, H
E
—
45
—
pA
+150°C
H
E part stands for the one whose operating temperature range is from -40°C to +125°C and H part stands
for the one whose operating temperature range is from -40°C to +150°C.
Figure 2-14 shows how VCMR changes across temperature.
© 2009-2011 Microchip Technology Inc.
DS22229D-page 3
MCP6401/1R/1U/2/4/6/7/9
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8v to +6.0v, VSS = GND,
VCM = VDD/2, VOUT ≈ VDD/2, VL = VDDD/2 and RL = 100 kΩ to VL (Refer to Figure 1-1).
Temp
Parts
(Note 1)
Parameters
Sym
Min
Typ
Max
Units
Common Mode Input
Impedance
ZCM
—
1013||6
—
Ω||pF
E, H
Differential Input
Impedance
ZDIFF
—
1013||6
—
Ω||pF
E, H
VCMR
VSS-0.20
—
VDD+0.20
V
VSS-0.05
—
VDD+0.05
V
+125°C
+150°C
Conditions
Common Mode
Common Mode Input
Voltage Range
(Note 2)
Common Mode
Rejection Ratio
CMRR
E, H
VDD = 1.8V
E
VSS
—
VDD
V
VSS-0.30
—
VDD+0.30
V
H
VSS-0.15
—
VDD+0.15
V
+125°C
E
VSS-0.10
—
VDD+0.10
V
+150°C
H
56
71
—
dB
—
68
—
dB
+125°C
E
VCM = -0.05V to 1.85V,
VDD = 1.8V
—
65
—
dB
+150°C
H
VCM = 0V to 1.8V,
VDD = 1.8V
63
78
—
dB
—
76
—
dB
+125°C
E
VCM = -0.15V to 6.15V,
VDD = 6.0V
—
75
—
dB
+150°C
H
VCM = -0.1V to 6.1V,
VDD = 6.0V
E, H
VOUT = 0.3V to VDD0.3V,
VCM = VSS
E, H
E, H
E, H
VDD = 6.0V
VCM = -0.2V to 2.0V,
VDD = 1.8V
VCM = -0.3V to 6.3V,
VDD = 6.0V
Open-Loop Gain
DC Open-Loop Gain
(Large Signal)
AOL
90
110
—
dB
—
105
—
dB
+125°C
E
—
100
—
dB
+150°C
H
1.790
1.792
—
V
—
1.788
—
V
+125°C
+150°C
Output
High-Level Output
Voltage
Low-Level Output
Voltage
Note 1:
2:
VOH
VOL
E, H
E
—
1.785
—
V
5.980
5.985
—
V
H
—
5.980
—
V
+125°C
E
—
5.975
—
V
+150°C
H
—
0.008
0.010
V
—
0.012
—
V
+125°C
—
0.015
—
V
+150°C
—
0.015
0.020
V
—
0.020
—
V
+125°C
E
—
0.025
—
V
+150°C
H
E, H
E, H
E
H
E, H
VDD = 1.8V
RL = 10 kΩ
0.5V input overdrive
VDD = 6.0V
RL = 10 kΩ
0.5V input overdrive
VDD = 1.8V
RL = 10 kΩ
0.5V input overdrive
VDD = 6.0V
RL = 10 kΩ
0.5V input overdrive
E part stands for the one whose operating temperature range is from -40°C to +125°C and H part stands
for the one whose operating temperature range is from -40°C to +150°C.
Figure 2-14 shows how VCMR changes across temperature.
DS22229D-page 4
© 2009-2011 Microchip Technology Inc.
MCP6401/1R/1U/2/4/6/7/9
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8v to +6.0v, VSS = GND,
VCM = VDD/2, VOUT ≈ VDD/2, VL = VDDD/2 and RL = 100 kΩ to VL (Refer to Figure 1-1).
Parameters
Output Short-Circuit
Current
Typ
Max
Units
Temp
Parts
(Note 1)
Conditions
Sym
Min
ISC
—
±5
—
mA
E, H
VDD = 1.8V
—
±15
—
mA
E, H
VDD = 6.0V
VDD
1.8
—
6.0
V
E, H
IQ
20
45
70
µA
—
55
—
µA
+125°C
E
—
60
—
µA
+150°C
H
Power Supply
Supply Voltage
Quiescent Current
per Amplifier
Note 1:
E, H
IO = 0, VDD = 5.0V
VCM = 0.2VDD
E part stands for the one whose operating temperature range is from -40°C to +125°C and H part stands
for the one whose operating temperature range is from -40°C to +150°C.
Figure 2-14 shows how VCMR changes across temperature.
2:
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8 to +6.0V, VSS = GND, VCM = VDD/2,
VOUT ≈ VDD/2, VL = VDD/2, RL = 100 kΩ to VL and CL = 60 pF (Refer to Figure 1-1).
Parameters
Sym
Min
Typ
Max
Units
Parts
Conditions
AC Response
Gain Bandwidth Product
GBWP
—
1
—
MHz
E, H
Phase Margin
PM
—
65
—
°
E, H
Slew Rate
SR
—
0.5
—
V/µs
E, H
Input Noise Voltage
Eni
—
3.6
—
µVp-p
E, H
f = 0.1 Hz to 10 Hz
Input Noise Voltage Density
eni
—
28
—
nV/√Hz
E, H
f = 1 kHz
Input Noise Current Density
ini
—
0.6
—
fA/√Hz
E, H
f = 1 kHz
G = +1 V/V
Noise
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, VDD = +1.8V to +6.0V and VSS = GND.
Parameters
Sym
Min
Typ
Max
Units
Conditions
TA
-40
—
+125
°C
E temp parts (Note 1)
TA
-40
—
+150
°C
H temp parts (Note 1)
TA
-65
—
+155
°C
Thermal Resistance, 5L-SC70
θJA
—
331
—
°C/W
Thermal Resistance, 5L-SOT-23
θJA
—
220.7
—
°C/W
Thermal Resistance, 8L-SOIC
θJA
—
149.5
—
°C/W
Thermal Resistance, 8L-2x3 TDFN
θJA
—
52.5
—
°C/W
Thermal Resistance, 14L-SOIC
θJA
—
95.3
—
°C/W
Thermal Resistance, 14L-TSSOP
θJA
—
100
—
°C/W
Temperature Ranges
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Note 1:
The internal junction temperature (TJ) must not exceed the absolute maximum specification of +155°C.
© 2009-2011 Microchip Technology Inc.
DS22229D-page 5
MCP6401/1R/1U/2/4/6/7/9
1.3
MCP6406/7/9 Electrical Specifications
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +6.0V, VSS = GND,
VCM = VDD/2, VOUT » VDD/2, VL = VDD/2 and RL = 100 kΩ to VL (Refer to Figure 1-1).
Parameters
Temp
Parts
(Note 1)
Sym
Min
Typ
Max
Units
VOS
-4.5
—
+4.5
mV
-5.0
±1.0
+5.0
mV
+125°C
E
-5.5
±1.5
+5.5
mV
+150°C
H
—
±2.0
—
µV/°C
-40°C
to
+125°C
E
—
±2.5
—
µV/°C
-40°C
to
+150°C
H
Conditions
Input Offset
Input Offset Voltage
Input Offset Drift
with Temperature
Power Supply
Rejection Ratio
ΔVOS/DTA
PSRR
E, H
63
78
—
dB
60
75
—
dB
+125°C
E, H
E
58
73
—
dB
+150°C
H
—
±1
100
pA
—
30
—
pA
+85°C
E, H
—
800
2000
pA
+125°C
E
—
7
12
nA
+150°C
H
—
1
—
pA
—
5
—
pA
+85°C
—
20
—
pA
+125°C
E
—
45
—
pA
+150°C
H
VCM = VSS
VCM = VSS
VCM = VSS
Input Bias Current and Impedance
Input Bias Current
Input Offset Current
IB
IOS
E, H
E, H
E, H
Common Mode
Input Impedance
ZCM
—
1013||6
—
Ω||pF
E, H
Differential Input
Impedance
ZDIFF
—
1013||6
—
Ω||pF
E, H
VCMR
VSS-0.20
—
VDD+0.20
V
E, H
VSS-0.05
—
VDD+0.05
V
+125°C
+150°C
Common Mode
Common Mode
Input Voltage Range
(Note 2)
Note 1:
2:
VDD = 1.8V
E
VSS
—
VDD
V
VSS-0.30
—
VDD+0.30
V
VSS-0.15
—
VDD+0.15
V
+125°C
E
VSS-0.10
—
VDD+0.10
V
+150°C
H
H
E, H
VDD = 6.0V
E part stands for the one whose operating temperature range is from -40°C to +125°C and H part stands
for the one whose operating temperature range is from -40°C to +150°C.
Figure 2-14 shows how VCMR changes across temperature.
DS22229D-page 6
© 2009-2011 Microchip Technology Inc.
MCP6401/1R/1U/2/4/6/7/9
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +6.0V, VSS = GND,
VCM = VDD/2, VOUT » VDD/2, VL = VDD/2 and RL = 100 kΩ to VL (Refer to Figure 1-1).
Parameters
Common Mode
Rejection Ratio
Temp
Parts
(Note 1)
Conditions
Sym
Min
Typ
Max
Units
CMRR
56
71
—
dB
53
68
—
dB
+125°C
E
VCM = -0.05V to 1.85V,
VDD = 1.8V
50
65
—
dB
+150°C
H
VCM = 0V to 1.8V,
VDD = 1.8V
63
78
—
dB
61
76
—
dB
+125°C
E
VCM = -0.15V to 6.15V,
VDD = 6.0V
60
75
—
dB
+150°C
H
VCM = -0.1V to 6.1V,
VDD = 6.0V
E, H
VOUT = 0.3V to
VDD-0.3V, VCM = VSS
E, H
E, H
VCM = -0.2V to 2.0V,
VDD = 1.8V
VCM = -0.3V to 6.3V,
VDD = 6.0V
Open-Loop Gain
DC Open-Loop Gain
(Large Signal)
AOL
90
110
—
dB
88
105
—
dB
+125°C
E
85
100
—
dB
+150°C
H
Output
High-Level Output
Voltage
Low-Level Output
Voltage
Output Short-Circuit
Current
VOH
VOL
1.790
1.792
—
V
1.785
1.788
—
V
+125°C
E, H
1.782
1.785
—
V
+150°C
5.980
5.985
—
V
5.970
5.980
—
V
+125°C
E
5.965
5.975
—
V
+150°C
H
E
H
E, H
—
0.008
0.010
V
—
0.012
0.015
V
+125°C
E, H
—
0.015
0.018
V
+150°C
—
0.015
0.020
V
—
0.020
0.030
V
+125°C
E
—
0.025
0.035
V
+150°C
H
E
H
E, H
VDD = 1.8V
RL = 10 kΩ
0.5V input overdrive
VDD = 6.0V
RL = 10 kΩ
0.5V input overdrive
VDD = 1.8V
RL = 10 kΩ
0.5V input overdrive
VDD = 6.0V
RL = 10 kΩ
0.5V input overdrive
—
±5
—
mA
E, H
VDD = 1.8V
—
±15
—
mA
E, H
VDD = 6.0V
VDD
1.8
—
6.0
V
E, H
IQ
20
45
70
µA
30
55
80
µA
+125°C
E
35
60
90
µA
+150°C
H
ISC
Power Supply
Supply Voltage
Quiescent Current
per Amplifier
Note 1:
2:
E, H
IO = 0, VDD = 5.0V
VCM = 0.2VDD
E part stands for the one whose operating temperature range is from -40°C to +125°C and H part stands
for the one whose operating temperature range is from -40°C to +150°C.
Figure 2-14 shows how VCMR changes across temperature.
© 2009-2011 Microchip Technology Inc.
DS22229D-page 7
MCP6401/1R/1U/2/4/6/7/9
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8 to +6.0V, VSS = GND, VCM = VDD/2,
VOUT ≈ VDD/2, VL = VDD/2, RL = 100 kΩ to VL and CL = 60 pF (Refer to Figure 1-1).
Parameters
Sym
Min
Typ
Max
Units
Part
Conditions
AC Response
Gain Bandwidth Product
GBWP
—
1
—
MHz
E, H
Phase Margin
PM
—
65
—
°
E, H
Slew Rate
SR
—
0.5
—
V/µs
E, H
Input Noise Voltage
Eni
—
3.6
—
µVp-p
E, H
f = 0.1 Hz to 10 Hz
Input Noise Voltage Density
eni
—
28
—
nV/√Hz
E, H
f = 1 kHz
Input Noise Current Density
ini
—
0.6
—
fA/√Hz
E, H
f = 1 kHz
G = +1 V/V
Noise
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, VDD = +1.8V to +6.0V and VSS = GND.
Parameters
Sym
Min
Typ
Max
Units
Conditions
TA
-40
—
+125
°C
E temp parts (Note 1)
TA
-40
—
+150
°C
H temp parts (Note 1)
TA
-65
—
+155
°C
Temperature Ranges
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23
θJA
—
220.7
—
°C/W
Thermal Resistance, 8L-SOIC
θJA
—
149.5
—
°C/W
Thermal Resistance, 14L-SOIC
θJA
—
95.3
—
°C/W
Note 1:
1.4
The internal junction temperature (TJ) must not exceed the absolute maximum specification of +155°C.
Test Circuits
The circuit used for most DC and AC tests is shown in
Figure 1-1. This circuit can independently set VCM and
VOUT; see Equation 1-1. Note that VCM is not the
circuit’s Common Mode voltage ((VP + VM)/2), and that
VOST includes VOS plus the effects (on the input offset
error, VOST) of temperature, CMRR, PSRR and AOL.
CF
6.8 pF
RG
100 kΩ
VP
G DM = RF ⁄ RG
CB1
100 nF
MCP640x
V CM = ( V P + VDD ⁄ 2 ) ⁄ 2
VDD/2
CB2
1 µF
VIN–
V OST = VIN– – V IN+
V OUT = ( VDD ⁄ 2 ) + ( VP – V M ) + V OST ( 1 + GDM )
VM
RG
100 kΩ
Where:
GDM = Differential Mode Gain
(V/V)
VCM = Op Amp’s Common Mode
Input Voltage
(V)
DS22229D-page 8
VDD
VIN+
EQUATION 1-1:
VOST = Op Amp’s Total Input Offset
Voltage
RF
100 kΩ
(mV)
RL
100 kΩ
RF
100 kΩ
CF
6.8 pF
VOUT
CL
60 pF
VL
FIGURE 1-1:
AC and DC Test Circuit for
Most Specifications.
© 2009-2011 Microchip Technology Inc.
MCP6401/1R/1U/2/4/6/7/9
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +6.0V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 100 kΩ to VL and CL = 60 pF.
45%
1760 Samples
VCM = VSS
21%
Percentage of Occurences
18%
15%
12%
9%
6%
3%
35%
30%
25%
20%
15%
10%
5%
0%
-10 -8
5
FIGURE 2-4:
3%
0%
-5
-4
-3
-2
-1
0
1
2
3
4
5
-10 -8
Input Offset Voltage (mV)
FIGURE 2-5:
Input Offset Voltage.
1000
800
600
400
200
0
-200
-400
-600
-800
-1000
21%
Input Offset Voltage (μV)
Percentage of Occurences
24%
1200 Samples
VCM = VSS
TA = +150ºC
18%
15%
12%
9%
6%
3%
0%
-5
-4
FIGURE 2-3:
-3
-2 -1 0
1
2
3
Input Offset Voltage (mV)
Input Offset Voltage.
© 2009-2011 Microchip Technology Inc.
4
5
10
Input Offset Voltage Drift.
VDD = 6.0V
Representative
Part
TA = +25°C
TA = -40°C
TA = +150°C
TA = +125°C
TA = +85°C
-0.5
FIGURE 2-2:
-6 -4 -2 0
2
4
6
8
Input Offset Voltage Drift (μV/°C)
6.5
6%
6.0
9%
5.5
12%
5.0
15%
1200 Samples
VCM = VSS
TA = -40°C to +150°C
4.5
1200 Samples
VCM = VSS
TA = +125ºC
18%
50%
45%
40%
35%
30%
25%
20%
15%
10%
5%
0%
4.0
21%
Percentage of Occurences
24%
10
Input Offset Voltage Drift.
3.5
Input Offset Voltage.
-6 -4 -2 0 2 4 6 8
Input Offset Voltage Drift (μV/°C)
3.0
4
2.5
FIGURE 2-1:
-2 -1 0
1
2
3
Input Offset Voltage (mV)
1.5
-3
1.0
-4
0.5
-5
2.0
0%
Percentage of Occurences
1760 Samples
VCM = VSS
TA = -40°C to +125°C
40%
0.0
Percentage of Occurences
24%
Common Mode Input Voltage (V)
FIGURE 2-6:
Input Offset Voltage vs.
Common Mode Input Voltage with VDD = 6.0V.
DS22229D-page 9
MCP6401/1R/1U/2/4/6/7/9
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +6.0V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 100 kΩ to VL and CL = 60 pF.
1,000
100
10
0.1
0.1
11
100
1000
1010
100
1k
Frequency (Hz)
Common Mode Input Voltage (V)
FIGURE 2-10:
vs. Frequency.
10
f = 1 kHz
VDD = 6.0 V
5
Input Offset Voltage vs.
TA = +150°C
TA = +125°C
-100
-200
TA = +85°C
TA = +25°C
TA = -40°C
-500
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
Power Supply Voltage (V)
FIGURE 2-9:
Input Offset Voltage vs.
Power Supply Voltage.
DS22229D-page 10
90
Representative Part
0
-400
6.5
100
100
-300
FIGURE 2-11:
Input Noise Voltage Density
vs. Common Mode Input Voltage.
CMRR, PSRR (dB)
Input Offset Voltage (μV)
200
6.0
Common Mode Input Voltage (V)
Output Voltage (V)
FIGURE 2-8:
Output Voltage.
5.5
0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1000
15
5.0
Representative Part
-750
20
4.5
-500
25
4.0
VDD = 1.8V
-250
30
3.5
VDD = 6.0V
0
35
3.0
250
40
1.0
500
10000 100k
100000
10k
Input Noise Voltage Density
0.5
750
-0.5
Input Noise Voltage Density
(nV/√Hz)
Input Offset Voltage (µV)
1000
0.0
FIGURE 2-7:
Input Offset Voltage vs.
Common Mode Input Voltage with VDD = 1.8V.
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
0.3
0.1
-0.1
-0.3
-0.5
TA = +150°C
TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
2.0
Input Noise Voltage Density
(nV/√Hz)
Input Offset Voltage (μV)
VDD = 1.8V
Representative
Part
1.5
1400
1200
1000
800
600
400
200
0
-200
-400
-600
-800
PSRR+
Representative Part
80
CMRR
70
PSRR-
60
50
40
30
20
10
10
100
100
FIGURE 2-12:
Frequency.
1k
10k
1000
10000
Frequency (Hz)
100k
1M
100000
1000000
CMRR, PSRR vs.
© 2009-2011 Microchip Technology Inc.
MCP6401/1R/1U/2/4/6/7/9
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +6.0V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 100 kΩ to VL and CL = 60 pF.
90
10000
80
75
70
65
CMRR (VDD = 6.0V)
60
CMRR (VDD = 1.8V)
55
TA = +150°C
1000
10
FIGURE 2-13:
Temperature.
CMRR, PSRR vs. Ambient
60
Quiescent Current
(μA/Amplifier)
65
VCMR_H - VOH @ VDD = 6.0V
@ VDD = 1.8V
0.0
-0.1
VCMR_L - VSS @ VDD = 1.8V
VOL - VSS @ VDD = 6.0V
-0.2
50
6.0
5.5
5.0
4.5
4.0
40
35
30
25
0
25
50
75 100
Ambient Temperature (°C)
3.5
45
-0.4
-25
125
VCM = 0.2VDD
-50
150
FIGURE 2-14:
Common Mode Input
Voltage Range Limits vs. Ambient Temperature.
VDD = 6.0V
VDD = 5.0V
VDD = 1.8V
55
-0.3
-50
3.0
FIGURE 2-16:
Input Bias Current vs.
Common Mode Input Voltage.
0.3
0.1
2.5
Common Mode Input Voltage (V)
0.4
0.2
2.0
150
1.5
125
1.0
0
25
50
75 100
Ambient Temperature (°C)
0.5
-25
0.0
-50
-25
0
25
50
75 100
Ambient Temperature (°C)
125
150
FIGURE 2-17:
Quiescent Current vs.
Ambient Temperature.
80
10000
70
30
TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
20
10
FIGURE 2-15:
Input Bias, Offset Current
vs. Ambient Temperature.
© 2009-2011 Microchip Technology Inc.
7.0
6.5
3.5
3.0
2.5
150
2.0
50
75
100
125
Ambient Temperature (°C)
1.5
25
0
1.0
1
0.0
Input Offset Current
6.0
10
40
5.5
100
50
5.0
Input Bias Current
TA = +150°C
60
4.5
1000
VCM = 0.2VDD
4.0
VDD = 6.0V
Quiescent Current
(μA/Amplifier)
Input Bias Current, Input Offset
Current (pA)
TA = +85°C
VDD = 6.0V
1
50
Common Mode Input Voltage
Range Limits (V)
TA = +125°C
100
0.5
CMRR,PSRR (dB)
Input Bias Current (pA)
PSRR (VDD = 1.8V to 6.0V)
85
Power Supply Voltage (V)
FIGURE 2-18:
Quiescent Current vs.
Power Supply Voltage.
DS22229D-page 11
MCP6401/1R/1U/2/4/6/7/9
1.0E+00
1
1.0E+01
10
DC Open-Loop Gain (dB)
FIGURE 2-19:
Frequency.
150
145
140
135
130
125
120
115
110
105
100
1.0E+02
1.0E+03
1.0E+04
1.0E+05
1.0E+06
-210
1.0E+07
100 1k 10k 100k 1M 10M
Frequency (Hz)
R L = 10 kΩ
VSS + 0.3V < V OUT < V DD - 0.3V
1.5
2.0
2.5 3.0 3.5 4.0 4.5 5.0
Power Supply Voltage (V)
5.5
DC Open-Loop Gain (dB)
FIGURE 2-21:
DC Open-Loop Gain vs.
Output Voltage Headroom.
DS22229D-page 12
1.6
90
1.5
85
1.4
80
Phase Margin
1.3
75
1.2
70
1.1
65
1.0
60
0.9
55
Gain Bandwidth Product
0.8
50
VDD = 1.8V
0.7
45
-50 -25
0
25 50 75 100 125 150
Temperature (°C)
FIGURE 2-23:
Gain Bandwidth Product,
Phase Margin vs. Ambient Temperature.
Output Short Circuit Current
(mA)
0.25
0
25 50 75 100 125 150
Temperature (°C)
FIGURE 2-22:
Gain Bandwidth Product,
Phase Margin vs. Ambient Temperature.
6.0
FIGURE 2-20:
DC Open-Loop Gain vs.
Power Supply Voltage.
150
145
VDD = 6.0V
140
135
130
125
120
VDD = 1.8V
115
110
Large Signal AOL
105
100
0.00
0.05
0.10
0.15
0.20
Output Voltage Headroom
VDD - VOH or VOL-VSS (V)
45
-50 -25
Open-Loop Gain, Phase vs.
50
0.7
Phase Margin (°)
0.1
55
VDD = 6.0V
25
20
TA = -40°C
TA = +25°C
TA = +85°C
TA = +125°C
TA = +150°C
15
10
5
0
6.0
1.0E-01
Gain Bandwidth Product (MHz)
-20
VDD = 6.0V
0.8
5.5
-180
5.0
0
60
Gain Bandwidth Product
0.9
4.5
-150
65
1.0
4.0
20
70
1.1
3.5
-120
3.0
40
75
1.2
2.5
-90
1.0
Open-Loop Phase
60
80
Phase Margin
1.3
2.0
-60
85
1.4
0.5
80
90
1.5
1.5
-30
1.6
0.0
100
Gain Bandwidth Product (MHz)
0
Open-Loop Gain
Open-Loop Phase (°)
Open-Loop Gain (dB)
120
Phase Margin (°)
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +6.0V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 100 kΩ to VL and CL = 60 pF.
Power Supply Voltage (°V)
FIGURE 2-24:
Output Short Circuit Current
vs. Power Supply Voltage.
© 2009-2011 Microchip Technology Inc.
MCP6401/1R/1U/2/4/6/7/9
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +6.0V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 100 kΩ to VL and CL = 60 pF.
0.9
VDD = 6.0V
0.8
Slew Rate (V/μs)
Output Voltage Swing (V P-P)
10
VDD = 1.8V
1
Falling Edge, VDD = 6.0V
Rising Edge, VDD = 6.0V
0.7
0.6
0.5
0.4
0.3
Falling Edge, VDD = 1.8V
Rising Edge, VDD = 1.8V
0.2
0.1
0.1
100
100
1k
1000
FIGURE 2-25:
Frequency.
10k
100k
10000
100000
Frequency (Hz)
1M
1000000
Output Voltage Swing vs.
-50
-25
0
FIGURE 2-28:
Temperature.
25
50
75
100
Temperature (°C)
125
150
Slew Rate vs. Ambient
VDD - VOH @ VDD = 1.8V
VOL - VSS @ VDD = 1.8V
100
10
1
VDD - VOH @ VDD = 6.0V
VOL - VSS @ VDD = 6.0V
RL = 10 kΩ
0.1
0.01
10
0.1
1
100
1000
Output Current (mA)
Output Voltage (20 mv/div)
Output Voltage Headroom
(mV)
1000
10
10000
FIGURE 2-26:
Output Voltage Headroom
vs. Output Current.
VDD = 6.0V
G = +1 V/V
Time (2 µs/div)
FIGURE 2-29:
Pulse Response.
Small Signal Non-Inverting
VDD - VOH @ VDD = 6.0V
VOL - VSS@ VDD = 6.0V
21
Output Voltage (20 mv/div)
Output Voltage Headroom
VDD - VOH or VOL - VSS (mV)
24
18
15
12
9
6
VDD - VOH @ VDD = 1.8V
VOL - VSS @ VDD = 1.8V
3
0
-50
-25
0
25
50
75 100
Ambient Temperature (°C)
125
150
FIGURE 2-27:
Output Voltage Headroom
vs. Ambient Temperature.
© 2009-2011 Microchip Technology Inc.
VDD = 6.0V
G = -1 V/V
Time (2 µs/div)
FIGURE 2-30:
Response.
Small Signal Inverting Pulse
DS22229D-page 13
MCP6401/1R/1U/2/4/6/7/9
10000
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VDD = 6.0V
G = +1 V/V
Closed Loop Output
Impedance ()
Output Voltage (V)
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +6.0V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 100 kΩ to VL and CL = 60 pF.
1000
100
GN:
101 V/V
11 V/V
1 V/V
10
1
1.0E+01
10
Time (20 µs/div)
Large Signal Non-Inverting
Input, Output Voltages (V)
1.0E+05
100k
1.0E+06
1M
1.00E-04
100μ
1.00E-05
10μ
1μ
1.00E-06
-IIN (A)
VDD = 6.0V
G = -1 V/V
TA = -40°C
TA = +25°C
TA = +85°C
TA = +125°C
TA = +150°C
1.00E-07
100n
1.00E-08
10n
1n
1.00E-09
1.00E-10
100p
1.00E-11
10p
1p
1.00E-12
-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
VIN (V)
Time (20 µs/div)
Large Signal Inverting Pulse
7.0
6.0
VOUT
5.0
VIN
3.0
2.0
0.0
1.0E+04
1k
10k
Frequency (Hz)
1.00E-03
FIGURE 2-32:
Response.
1.0
1.0E+03
1m
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4.0
100
FIGURE 2-34:
Closed Loop Output
Impedance vs. Frequency.
VDD = 6.0V
G = +2 V/V
-1.0
Time (0.1 ms/div)
FIGURE 2-33:
The
MCP6401/1R/1U/2/4/6/7/9 Shows No Phase
Reversal.
DS22229D-page 14
FIGURE 2-35:
Measured Input Current vs.
Input Voltage (below VSS).
Channel to Channel Separation
(dB)
Output Voltage (V)
FIGURE 2-31:
Pulse Response.
1.0E+02
150
140
130
120
110
100
Input Referred
90
80
100
100
10000
1k
10k
Frequency (Hz)
1000
100000
100k
FIGURE 2-36:
Channel-to-Channel
Separation vs. Frequency (MCP6402/4/7/9 only).
© 2009-2011 Microchip Technology Inc.
© 2009-2011 Microchip Technology Inc.
3.0
PIN DESCRIPTIONS
Descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE 1
MCP6401 MCP6401R MCP6401U
SC70-5,
SOT-23-5
SOT-23-5
SOT-23-5
1
1
4
MCP6402
MCP6404
MCP6406
MCP6407
MCP6409
SOIC
2x3
TDFN
SOIC,
TSSOP
SOT-23-5
SOIC
SOIC
1
1
1
1
1
1
Symbol
Description
VOUT, VOUTA Analog Output (op amp A)
4
4
3
2
2
2
4
2
2
VIN–, VINA– Inverting Input (op amp A)
3
3
1
3
3
3
3
3
3
VIN+, VINA+ Non-inverting Input (op amp A)
5
2
5
8
8
4
5
8
4
VDD
Positive Power Supply
—
—
—
5
5
5
—
5
5
VINB+
Non-inverting Input (op amp B)
—
—
—
6
6
6
—
6
6
VINB–
Inverting Input (op amp B)
—
—
7
7
7
—
7
7
VOUTB
Analog Output (op amp B)
—
—
—
—
8
—
—
8
VOUTC
Analog Output (op amp C)
—
—
—
—
—
9
—
—
9
VINC–
Inverting Input (op amp C)
—
—
—
—
—
10
—
—
10
VINC+
Non-inverting Input (op amp C)
2
5
2
4
4
11
2
4
11
VSS
—
—
—
—
—
12
—
—
12
VIND+
Non-inverting Input (op amp D)
Negative Power Supply
—
—
—
—
—
13
—
—
13
VIND–
Inverting Input (op amp D)
—
—
—
—
—
14
—
—
14
VOUTD
Analog Output (op amp D)
—
—
—
—
9
—
—
—
—
EP
Exposed Thermal Pad (EP); must be
connected to VSS.
DS22229D-page 15
MCP6401/1R/1U/2/4/6/7/9
—
—
MCP6401/1R/1U/2/4/6/7/9
3.1
Analog Output (VOUT)
The output pin is low-impedance voltage source.
3.2
Analog Inputs (VIN+, VIN-)
The non-inverting and inverting inputs are highimpedance CMOS inputs with low bias currents.
3.3
Power Supply Pin (VDD, VSS)
The positive power supply (VDD) is 1.8V to 6.0V higher
than the negative power supply (VSS). For normal
operation, the other pins are at voltages between VSS
and VDD.
Typically, these parts are used in a single (positive)
supply configuration. In this case, VSS is connected to
ground and VDD is connected to the supply. VDD will
need bypass capacitors.
DS22229D-page 16
© 2009-2011 Microchip Technology Inc.
MCP6401/1R/1U/2/4/6/7/9
4.0
APPLICATION INFORMATION
The MCP6401/1R/1U/2/4/6/7/9 family of op amps is
manufactured using Microchip’s state-of-the-art CMOS
process and is specifically designed for low-power,
high-precision applications.
4.1
VDD
D1
D2
U1
V1
VOUT
Rail-to-Rail Input
4.1.1
MCP640x
V2
PHASE REVERSAL
The MCP6401/1R/1U/2/4/6/7/9 op amps are designed
to prevent phase reversal when the input pins exceed
the supply voltages. Figure 2-33 shows the input
voltage exceeding the supply voltage with no phase
reversal.
4.1.2
INPUT VOLTAGE LIMITS
In order to prevent damage and/or improper operation
of these amplifiers, the circuit must limit the voltages at
the input pins (see Section 1.1 “Absolute Maximum
Ratings †”).
The ESD protection on the inputs can be depicted as
shown in Figure 4-1. This structure was chosen to
protect the input transistors against many (but not all)
over-voltage conditions, and to minimize the input bias
current (IB).
FIGURE 4-2:
Inputs.
Protecting the Analog
A significant amount of current can flow out of the
inputs when the Common Mode voltage (VCM) is below
ground (VSS); See Figure 2-35.
4.1.3
INPUT CURRENT LIMITS
In order to prevent damage and/or improper operation
of these amplifiers, the circuit must limit the currents
into the input pins (see Section 1.1 “Absolute
Maximum Ratings †”).
Figure 4-3 shows one approach to protecting these
inputs. The resistors R1 and R2 limit the possible
currents in or out of the input pins (and the ESD diodes,
D1 and D2). The diode currents will go through either
VDD or VSS.
VDD
VDD Bond
Pad
D1
VIN+
Bond
Pad
Input
Stage
Bond
VIN–
Pad
D2
U1
V1
R1
VOUT
MCP640x
V2
R2
VSS Bond
Pad
FIGURE 4-1:
Structures.
Simplified Analog Input ESD
The input ESD diodes clamp the inputs when they try
to go more than one diode drop below VSS. They also
clamp any voltages that go well above VDD; their
breakdown voltage is high enough to allow normal
operation, but not low enough to protect against slow
over-voltage (beyond VDD) events. Very fast ESD
events (that meet the spec) are limited so that damage
does not occur.
In some applications, it may be necessary to prevent
excessive voltages from reaching the op amp inputs;
Figure 4-2 shows one approach to protecting these
inputs.
© 2009-2011 Microchip Technology Inc.
min(R1,R2) >
VSS – min(V1, V2)
2 mA
min(R1,R2) >
max(V1,V2) – VDD
2 mA
FIGURE 4-3:
Inputs.
4.1.4
Protecting the Analog
NORMAL OPERATION
The input stage of the MCP6401/1R/1U/2/4/6/7/9 op
amps use two differential input stages in parallel. One
operates at a low Common Mode input voltage (VCM),
while the other operates at a high VCM. With this
topology, the device operates with a VCM up to 300 mV
above VDD and 300 mV below VSS (see Figure 2-14).
The input offset voltage is measured at VCM = VSS –
0.3V and VDD + 0.3V to ensure proper operation.
The transition between the input stages occurs when
VCM is near VDD – 1.1V (see Figures 2-6 and 2-7). For
the best distortion performance and gain linearity, with
non-inverting gains, avoid this region of operation.
DS22229D-page 17
MCP6401/1R/1U/2/4/6/7/9
4.2
Rail-to-Rail Output
The
output
voltage
range
of
the
MCP6401/1R/1U/2/4/6/7/9 op amps is VSS + 20 mV
(minimum) and VDD – 20 mV (maximum) when
RL = 10 kΩ is connected to VDD/2 and VDD = 6.0V.
Refer to Figures 2-26 and 2-27 for more information.
4.3
4.4
Capacitive Loads
Driving large capacitive loads can cause stability
problems for voltage feedback op amps. As the load
capacitance increases, the feedback loop’s phase
margin decreases and the closed-loop bandwidth is
reduced. This produces gain peaking in the frequency
response, with overshoot and ringing in the step
response. While a unity-gain buffer (G = +1 V/V) is the
most sensitive to capacitive loads, all gains show the
same general behavior.
When driving large capacitive loads with these op
amps (e.g., > 100 pF when G = +1 V/V), a small series
resistor at the output (RISO in Figure 4-4) improves the
feedback loop’s phase margin (stability) by making the
output load resistive at higher frequencies. The
bandwidth will be generally lower than the bandwidth
with no capacitance load.
–
Supply Bypass
With this family of operational amplifiers, the power
supply pin (VDD for single-supply) should have a local
bypass capacitor (i.e., 0.01 µF to 0.1 µF) within 2 mm
for good high frequency performance. It can use a bulk
capacitor (i.e., 1 µF or larger) within 100 mm to provide
large, slow currents. This bulk capacitor can be shared
with other analog parts.
4.5
Unused Op Amps
An unused op amp in quad packages (MCP6404 or
MCP6409) should be configured as shown in Figure 46. These circuits prevent the output from toggling and
causing crosstalk. Circuit A sets the op amp at its
minimum noise gain. The resistor divider produces any
desired reference voltage within the output voltage
range of the op amp, which buffers that reference
voltage. Circuit B uses the minimum number of
components and operates as a comparator, but it may
draw more current.
RISO
MCP640x
+
VIN
After selecting RISO for your circuit, double-check the
resulting frequency response peaking and step
response overshoot. Modify RISO’s value until the
response is reasonable. Bench evaluation and
simulations with the MCP6401/1R/1U/2/4/6/7/9 SPICE
macro model are very helpful.
VOUT
CL
FIGURE 4-4:
Output Resistor, RISO
Stabilizes Large Capacitive Loads.
Figure 4-5 gives recommended RISO values for
different capacitive loads and gains. The x-axis is the
normalized load capacitance (CL/GN), where GN is the
circuit's noise gain. For non-inverting gains, GN and the
Signal Gain are equal. For inverting gains, GN is
1+|Signal Gain| (e.g., -1 V/V gives GN = +2 V/V).
¼ MCP6404 (B)
¼ MCP6404 (A)
VDD
R1
VDD
VDD
R2
VREF
R2
VREF = VDD × ------------------R 1 + R2
FIGURE 4-6:
Unused Op Amps.
Recommended R
ISO
(Ω)
10000
VDD = 6.0 V
RL = 10 kΩ
1000
100
10
GN:
1 V/V
2 V/V
≥ 5 V/V
1
10p
100p 1.E-09
1n
10n
0.1µ
1µ
1.E-11
1.E-10
1.E-08
1.E-07
1.E-06
Normalized Load Capacitance; CL/GN (F)
FIGURE 4-5:
Recommended RISO Values
for Capacitive Loads.
DS22229D-page 18
© 2009-2011 Microchip Technology Inc.
MCP6401/1R/1U/2/4/6/7/9
4.6
PCB Surface Leakage
4.7
In applications where low input bias current is critical,
Printed Circuit Board (PCB) surface leakage effects
need to be considered. Surface leakage is caused by
humidity, dust or other contamination on the board.
Under low humidity conditions, a typical resistance
between nearby traces is 1012Ω. A 5V difference would
cause 5 pA of current to flow; which is greater than the
MCP6401/1R/1U/2/4/6/7/9 family’s bias current at
+25°C (±1.0 pA, typical).
The easiest way to reduce surface leakage is to use a
guard ring around sensitive pins (or traces). The guard
ring is biased at the same voltage as the sensitive pin.
An example of this type of layout is shown in
Figure 4-7.
Guard Ring
VIN– VIN+
VSS
4.7.1
Application Circuits
PRECISION HALF-WAVE
RECTIFIER
The precision half-wave rectifier, which is also known
as a super diode, is a configuration obtained with an
operational amplifier in order to have a circuit behave
like an ideal diode and rectifier. It effectively cancels the
forward voltage drop of the diode so that very low level
signals can still be rectified with minimal error. This can
be useful for high-precision signal processing. The
MCP6401/1R/1U/2/4/6/7/9 op amps have high input
impedance, low input bias current and rail-to-rail
input/output, which makes this device suitable for
precision rectifier applications.
Figure 4-8 shows a precision half-wave rectifier and its
transfer characteristic. The rectifier’s input impedance
is determined by the input resistor R1. To avoid loading
effect, it must be driven from a low-impedance source.
When VIN is greater than zero, D1 is OFF, D2 is ON, and
VOUT is zero. When VIN is less than zero, D1 is ON, D2
is OFF, and VOUT is the VIN with an amplification of
-R2/R1.
FIGURE 4-7:
for Inverting Gain.
Example Guard Ring Layout
The rectifier circuit shown in Figure 4-8 has the benefit
that the op amp never goes in saturation, so the only
thing affecting its frequency response is the
amplification and the gain bandwidth product.
.
1.
2.
Non-inverting Gain and Unity-Gain Buffer:
a) Connect the non-inverting pin (VIN+) to the
input with a wire that does not touch the
PCB surface.
b) Connect the guard ring to the inverting input
pin (VIN–). This biases the guard ring to the
Common Mode input voltage.
Inverting Gain and Transimpedance Gain
Amplifiers (convert current to voltage, such as
photo detectors):
a) Connect the guard ring to the non-inverting
input pin (VIN+). This biases the guard ring
to the same reference voltage as the op
amp (e.g., VDD/2 or ground).
b) Connect the inverting pin (VIN–) to the input
with a wire that does not touch the PCB
surface.
R2
D2
VIN
R1
VOUT
MCP6401
D1
Precision Half-Wave Rectifier
VOUT
-R2/R1
VIN
Transfer Characteristic
FIGURE 4-8:
Rectifier.
© 2009-2011 Microchip Technology Inc.
Precision Half-Wave
DS22229D-page 19
MCP6401/1R/1U/2/4/6/7/9
4.7.2
BATTERY CURRENT SENSING
The MCP6401/1R/1U/2/4/6/7/9 op amps’ Common
Mode Input Range, which goes 0.3V beyond both
supply rails, supports their use in high-side and lowside battery current sensing applications. The low
quiescent current (45 µA, typical) helps prolong battery
life, and the rail-to-rail output supports detection of low
currents.
Figure 4-9 shows a high-side battery current sensor
circuit. The 10Ω resistor is sized to minimize power
losses. The battery current (IDD) through the 10Ω
resistor causes its top terminal to be more negative
than the bottom terminal. This keeps the Common
Mode input voltage of the op amp below VDD, which is
within its allowed range. The output of the op amp will
also be below VDD, which is within its Maximum Output
Voltage Swing specification.
4.7.3
INSTRUMENTATION AMPLIFIER
The MCP6401/1R/1U/2/4/6/7/9 op amps are well
suited for conditioning sensor signals in batterypowered applications. Figure 4-10 shows a two op amp
instrumentation amplifier, using the MCP6402, that
works well for applications requiring rejection of
Common Mode noise at higher gains. The reference
voltage (VREF) is supplied by a low impedance source.
In single supply applications, VREF is typically VDD/2.
RG
VREF R1
R2
R2
1.8V
to
6.0V
To load
10Ω
100 kΩ
VDD
VOUT
MCP6401
1 MΩ
VOUT
V2
½ MCP6402
IDD
R1
½ MCP6402
V1
R 1 2R 1
VOUT = ( V 1 – V 2 ) ⎛ 1 + ------ + ---------⎞ + V REF
⎝
R 2 RG ⎠
FIGURE 4-10:
Two Op Amp
Instrumentation Amplifier.
V DD – VOUT
I DD = -----------------------------------------( 10 V/V ) ⋅ ( 10 Ω )
FIGURE 4-9:
DS22229D-page 20
Supply Current Sensing.
© 2009-2011 Microchip Technology Inc.
MCP6401/1R/1U/2/4/6/7/9
5.0
DESIGN AIDS
Microchip provides the basic design tools needed for
the MCP6401/1R/1U/2/4/6/7/9 family of op amps.
5.1
SPICE Macro Model
The latest SPICE macro model for the
MCP6401/1R/1U/2/4/6/7/9 op amp is available on the
Microchip web site at www.microchip.com. The model
was written and tested in official Orcad (Cadence)
owned PSPICE. For other simulators, translation may
be required.
The model covers a wide aspect of the op amp's
electrical specifications. Not only does the model cover
voltage, current, and resistance of the op amp, but it
also covers the temperature and noise effects on the
behavior of the op amp. The model has not been
verified outside of the specification range listed in the
op amp data sheet. The model behaviors under these
conditions cannot be guaranteed to match the actual
op amp performance.
Moreover, the model is intended to be an initial design
tool. Bench testing is a very important part of any
design and cannot be replaced with simulations. Also,
simulation results using this macro model need to be
validated by comparing them to the data sheet
specifications and characteristic curves.
5.2
FilterLab® Software
Microchip’s FilterLab® software is an innovative
software tool that simplifies analog active filter (using
op amps) design. Available at no cost from the
Microchip web site at www.microchip.com/filterlab, the
FilterLab design tool provides full schematic diagrams
of the filter circuit with component values. It also
outputs the filter circuit in SPICE format, which can be
used with the macro model to simulate actual filter
performance.
5.3
Microchip Advanced Part Selector
(MAPS)
MAPS is a software tool that helps semiconductor
professionals efficiently identify Microchip devices that
fit a particular design requirement. Available at no cost
from
the
Microchip
website
at
www.microchip.com/maps, the MAPS is an overall
selection tool for Microchip’s product portfolio that
includes Analog, Memory, MCUs and DSCs. Using this
tool, you can define a filter to sort features for a
parametric search of devices and export side-by-side
technical comparison reports. Helpful links are also
provided for Datasheets, Purchase, and Sampling of
Microchip parts.
© 2009-2011 Microchip Technology Inc.
5.4
Analog Demonstration and
Evaluation Boards
Microchip offers a broad spectrum of Analog
Demonstration and Evaluation Boards that are
designed to help you achieve faster time to market. For
a complete listing of these boards and their
corresponding user’s guides and technical information,
visit www.microchip.com/analogtools, the Microchip
web site.
Some boards that are especially useful are:
•
•
•
•
•
•
•
MCP6XXX Amplifier Evaluation Board 1
MCP6XXX Amplifier Evaluation Board 2
MCP6XXX Amplifier Evaluation Board 3
MCP6XXX Amplifier Evaluation Board 4
Active Filter Demo Board Kit
5/6-Pin SOT-23 Evaluation Board, P/N VSUPEV2
8-Pin SOIC/MSOP/TSSOP/DIP Evaluation Board,
P/N SOIC8EV
• 14-Pin SOIC/TSSOP/DIP Evaluation Board, P/N
SOIC14EV
5.5
Application Notes
The following Microchip Analog Design Note and
Application Notes are available on the Microchip web
site at www.microchip.com/appnotes and are
recommended as supplemental reference resources.
• ADN003: “Select the Right Operational Amplifier
for your Filtering Circuits”, DS21821
• AN722: “Operational Amplifier Topologies and DC
Specifications”, DS00722
• AN723: “Operational Amplifier AC Specifications
and Applications”, DS00723
• AN884: “Driving Capacitive Loads With Op
Amps”, DS00884
• AN990: “Analog Sensor Conditioning Circuits –
An Overview”, DS00990
• AN1177: “Op Amp Precision Design: DC Errors”,
DS01177
• AN1228: “Op Amp Precision Design: Random
Noise”, DS01228
• AN1297: “Microchip’s Op Amp SPICE Macro
Models”, DS01297
• AN1332: “Current Sensing Circuit Concepts and
Fundamentals”, DS01332
These application notes and others are listed in the
design guide:
• “Signal Chain Design Guide”, DS21825
DS22229D-page 21
MCP6401/1R/1U/2/4/6/7/9
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
5-Lead SC70 (MCP6401 only)
Example:
BL25
5-Lead SOT-23
(MCP6401/1R/1U, MCP6406)
Part Number
Code
MCP6401T-E/OT
NLNN
MCP6401T-H/OT
U8NN
MCP6401RT-E/OT
NMNN
MCP6401RT-H/OT
U9NN
MCP6401UT-E/OT
NPNN
MCP6401UT-H/OT
V8NN
MCP6406T-E/OT
ZXNN
MCP6406T-H/OT
ZYNN
8-Lead TDFN (2 x 3) (MCP6402 only)
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
DS22229D-page 22
NL25
Example:
Part Number
Code
MCP6402T-E/MNY
AAW
8-Lead SOIC (150 mil) (MCP6401, MCP6402, MCP6407)
NNN
Example:
AAW
129
25
Example:
MCP6402E
e3
SN ^^1129
256
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2009-2011 Microchip Technology Inc.
MCP6401/1R/1U/2/4/6/7/9
Package Marking Information (Continued)
14-Lead SOIC (150 mil) (MCP6404, MCP6409)
Example:
MCP6404
H/SL e
^^3
1129256
and
14-Lead TSSOP (MCP6404 only)
XXXXXXXX
YYWW
NNN
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Example:
6404E/ST
1129
256
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2009-2011 Microchip Technology Inc.
DS22229D-page 23
MCP6401/1R/1U/2/4/6/7/9
.
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DS22229D-page 24
© 2009-2011 Microchip Technology Inc.
MCP6401/1R/1U/2/4/6/7/9
.
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1/%#
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© 2009-2011 Microchip Technology Inc.
DS22229D-page 25
MCP6401/1R/1U/2/4/6/7/9
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DS22229D-page 26
© 2009-2011 Microchip Technology Inc.
MCP6401/1R/1U/2/4/6/7/9
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
© 2009-2011 Microchip Technology Inc.
DS22229D-page 27
MCP6401/1R/1U/2/4/6/7/9
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS22229D-page 28
© 2009-2011 Microchip Technology Inc.
MCP6401/1R/1U/2/4/6/7/9
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
© 2009-2011 Microchip Technology Inc.
DS22229D-page 29
MCP6401/1R/1U/2/4/6/7/9
"
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DS22229D-page 30
© 2009-2011 Microchip Technology Inc.
MCP6401/1R/1U/2/4/6/7/9
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
© 2009-2011 Microchip Technology Inc.
DS22229D-page 31
MCP6401/1R/1U/2/4/6/7/9
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS22229D-page 32
© 2009-2011 Microchip Technology Inc.
MCP6401/1R/1U/2/4/6/7/9
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DS22229D-page 33
MCP6401/1R/1U/2/4/6/7/9
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS22229D-page 34
© 2009-2011 Microchip Technology Inc.
MCP6401/1R/1U/2/4/6/7/9
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
© 2009-2011 Microchip Technology Inc.
DS22229D-page 35
MCP6401/1R/1U/2/4/6/7/9
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DS22229D-page 36
© 2009-2011 Microchip Technology Inc.
MCP6401/1R/1U/2/4/6/7/9
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
© 2009-2011 Microchip Technology Inc.
DS22229D-page 37
MCP6401/1R/1U/2/4/6/7/9
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS22229D-page 38
© 2009-2011 Microchip Technology Inc.
MCP6401/1R/1U/2/4/6/7/9
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
© 2009-2011 Microchip Technology Inc.
DS22229D-page 39
MCP6401/1R/1U/2/4/6/7/9
APPENDIX A:
REVISION HISTORY
Revision D (September 2011)
The following is the list of modifications:
1.
Section 1.0 “Electrical Characteristics”:
Updated minor typographical corrections in
both “DC Electrical Specifications” tables to
show the correct unit for RL (kΩ instead of kW).
Revision C (August 2011)
The following is the list of modifications:
1.
2.
3.
4.
5.
6.
7.
8.
Added new MCP6406, MCP6407 and
MCP6409 devices and the related information
throughout the document.
Created two package type drawings based on
the temperature characterization (see E Temp
Package Types and H Temp Package Types).
Added MCP6406/7/9 specification tables in
Section 1.3 “MCP6406/7/9 Electrical Specifications”.
Updated
characterization
graphics
in
Section 2.0 “Typical Performance Curves”.
Updated Table 3-1 in Section 3.0 “Pin
Descriptions” to show all the devices.
Updated markings examples in Section 6.1
“Package Marking Information”.
Updated the package markings information to
show all drawings available for each type of
package.
Updated the Product Identification System
page with the new devices and temperature
specifications.
DS22229D-page 40
Revision B (June 2010)
The following is the list of modifications:
1.
Added the MCP6402 and MCP6404 package
information.
2. Updated the ESD protection value on all pins in
Section 1.1 “Absolute Maximum Ratings †”.
3. Added Figure 2-36.
4. Updated Table 3-1.
5. Updated Section 4.1.2 “Input Voltage Limits”.
6. Added Section 4.1.3 “Input Current Limits”.
7. Added Section 4.5 “Unused Op Amps”.
8. Updated Section 5.4 “Analog Demonstration
and Evaluation Boards”.
9. Updated the package markings information and
drawings.
10. Updated the Product Identification System
page.
Revision A (December 2009)
Original data sheet for the MCP6401/1R/1U/2/4/6/7/9
family of devices.
© 2009-2011 Microchip Technology Inc.
MCP6401/1R/1U/2/4/6/7/9
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
-X
/XX
Device
Temperature
Range
Package
Device:
MCP6401T:
MCP6401RT:
MCP6401UT:
MCP6402:
MCP6402T:
MCP6404:
MCP6404T:
MCP6406T:
MCP6407:
MCP6407T:
MCP6409:
MCP6409T:
Temperature Range:
Package:
E
H
Single Op Amp (Tape and Reel)
(SC70, SOT-23)
Single Op Amp (Tape and Reel)
(SOT-23)
Single Op Amp (Tape and Reel)
(SOT-23)
Dual Op Amp
Dual Op Amp (Tape and Reel)
(SOIC, 2x3 TDFN)
Quad Op Amp
Quad Op Amp (Tape and Reel)
(SOIC, TSSOP)
Single Op Amp (Tape and Reel)
(SOT-23)
Dual Op Amp
Dual Op Amp (Tape and Reel)
(SOIC)
Quad Op Amp
Quad Op Amp (Tape and Reel)
(SOIC)
= -40°C to +125°C (Extended Temperature)
= -40°C to +150°C (High Temperature)
LT
=
OT =
SN =
MNY* =
SL
=
ST
=
Plastic Package (SC70), 5-lead
Plastic Small Outline Transistor (SOT-23), 5-lead
Plastic SOIC, (3.90 mm body), 8-lead
Plastic Dual Flat, No Lead, (2x3 TDFN), 8-lead
Plastic SOIC (3.90 mm body), 14-lead
Plastic TSSOP (4.4mm body), 14-lead
* Y = Nickel palladium gold manufacturing designator.
Only available on the TDFN package.
© 2009-2011 Microchip Technology Inc.
Examples:
a)
MCP6401T-E/LT:
Tape and Reel,
Extended Temperature,
5LD SC70 pkg
Tape and Reel,
Extended Temperature,
5LD SOT-23 pkg
Tape and Reel,
5LD SOT-23 pkg
Tape and Reel,
Extended Temperature,
5LD SOT-23 pkg
b)
MCP6401T-E/OT:
c)
MCP6401RT-E/OT:
d)
MCP6401UT-E/OT:
e)
MCP6402-E/SN:
f)
MCP6402T-E/SN:
g)
MCP6402T-E/MNY:
h)
MCP6404-E/SL:
i)
MCP6404T-E/SL:
j)
MCP6404-E/ST:
k)
MCP6404T-E/ST:
a)
MCP6401T-H/OT:
Tape and Reel,
High Temperature,
5LD SOT-23 pkg
b)
MCP6402-H/SN:
c)
MCP6402T-H/SN:
High Temperature,
8LD SOIC pkg
Tape and Reel,
High Temperature,
8LD SOIC pkg
d)
MCP6404-H/SL:
e)
MCP6404T-H/SL:
f)
MCP6406T-H/OT:
Tape and Reel,
High Temperature,
5LD SOT-23 pkg
g)
MCP6407-H/SN:
h)
MCP6407T-H/SN:
High Temperature,
8LD SOIC pkg
Tape and Reel,
High Temperature,
8LD SOIC pkg
i)
MCP6409-H/SL:
j)
MCP6409T-H/SL:
Extended Temperature,
8LD SOIC pkg
Tape and Reel,
Extended Temperature,
8LD SOIC pkg
Tape and Reel,
Extended Temperature,
8LD 2x3 TDFN pkg
Extended Temperature,
14LD SOIC pkg
Tape and Reel,
Extended Temperature,
14LD SOIC pkg
Extended Temperature,
14LD TSSOP pkg
Tape and Reel,
Extended Temperature,
14LD TSSOP pkg.
High Temperature,
14LD SOIC pkg
Tape and Reel,
High Temperature,
14LD SOIC pkg
High Temperature,
14LD SOIC pkg
Tape and Reel,
High Temperature,
14LD SOIC pkg
DS22229D-page 41
MCP6401/1R/1U/2/4/6/7/9
NOTES:
DS22229D-page 42
© 2009-2011 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART,
PIC32 logo, rfPIC and UNI/O are registered trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MXDEV, MXLAB, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip
Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, chipKIT,
chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net,
dsPICworks, dsSPEAK, ECAN, ECONOMONITOR,
FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP,
Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB,
MPLINK, mTouch, Omniscient Code Generation, PICC,
PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE,
rfLAB, Select Mode, Total Endurance, TSHARC,
UniWinDriver, WiperLock and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2009-2011, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-61341-616-7
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
© 2009-2011 Microchip Technology Inc.
DS22229D-page 43
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Japan - Yokohama
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Cleveland
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
Santa Clara
Santa Clara, CA
Tel: 408-961-6444
Fax: 408-961-6445
Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
China - Beijing
Tel: 86-10-8569-7000
Fax: 86-10-8528-2104
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
China - Hangzhou
Tel: 86-571-2819-3187
Fax: 86-571-2819-3189
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
China - Hong Kong SAR
Tel: 852-2401-1200
Fax: 852-2401-3431
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Taiwan - Kaohsiung
Tel: 886-7-536-4818
Fax: 886-7-330-9305
China - Shenzhen
Tel: 86-755-8203-2660
Fax: 86-755-8203-1760
Taiwan - Taipei
Tel: 886-2-2500-6610
Fax: 886-2-2508-0102
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
DS22229D-page 44
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
08/02/11
© 2009-2011 Microchip Technology Inc.