MCP6491/2/4
7.5 MHz, Low-Input Bias Current Op Amps
Features
Description
• Low-Input Bias Current
- 150 pA (typical, TA = +125°C)
• Low Quiescent Current
- 530 µA/amplifier (typical)
• Low-Input Offset Voltage
- ±1.5 mV (maximum)
• Supply Voltage Range: 2.4V to 5.5V
• Rail-to-Rail Input/Output
• Gain Bandwidth Product: 7.5 MHz (typical)
• Slew Rate: 6 V/µs (typical)
• Unity Gain Stable
• No Phase Reversal
• Small Packages
- Singles in SC70-5, SOT-23-5
• Extended Temperature Range
- -40°C to +125°C
The Microchip MCP6491/2/4 family of operational
amplifiers (op amps) has low-input bias current
(150 pA, typical at 125°C) and rail-to-rail input and
output operation. This family is unity gain stable and
has a gain bandwidth product of 7.5 MHz (typical).
These devices operate with a single-supply voltage as
low as 2.4V, while only drawing 530 µA/amplifier
(typical) of quiescent current. These features make the
family of op amps well suited for photodiode amplifier,
pH electrode amplifier, low leakage amplifier, and
battery-powered signal conditioning applications, etc.
The MCP6491/2/4 family is offered in single
(MCP6491), dual (MCP6492), quad (MCP6494)
packages. All devices are designed using an advanced
CMOS process and fully specified in extended
temperature range from -40°C to +125°C.
Related Parts
• MCP6471/2/4: 2 MHz, Low-Input Bias Current Op
Amps
• MCP6481/2/4: 4 MHz, Low-Input Bias Current Op
Amps
Applications
•
•
•
•
•
•
Photodiode Amplifier
pH Electrode Amplifier
Low Leakage Amplifier
Piezoelectric Transducer Amplifier
Active Analog Filter
Battery-Powered Signal Conditioning
Design Aids
•
•
•
•
•
SPICE Macro Models
FilterLab® Software
MAPS (Microchip Advanced Part Selector)
Analog Demonstration and Evaluation Boards
Application Notes
Package Types
MCP6491
SC70, SOT-23
VOUT 1
VSS 2
VIN+ 3
5 VDD
4 VIN–
MCP6492
SOIC, MSOP
MCP6492
2x3 TDFN*
VOUTA 1
VINA– 2
8 VDD
7 VOUTB
VOUTA 1
VINA+ 3
VSS 4
6 VINB–
5 VINB+
VINA+ 3
VSS 4
* Includes Exposed Thermal Pad (EP); see Table 3-1.
2012-2013 Microchip Technology Inc.
VINA– 2
EP
9
MCP6494
SOIC, TSSOP
8 VDD
7 VOUTB
VOUTA 1
VINA– 2
14 VOUTD
13 VIND–
6 VINB–
5 VINB+
VINA+ 3
VDD 4
VINB+ 5
12 VIND+
11 VSS
VINB– 6
VOUTB 7
10 VINC+
9 VINC–
8 VOUTC
DS20002321C-page 1
MCP6491/2/4
Typical Application
C2
R2
VOUT
ID1
VDD
–
D1
Light
MCP649X
+
Photodiode Amplifier
DS20002321C-page 2
2012-2013 Microchip Technology Inc.
MCP6491/2/4
1.0
ELECTRICAL
CHARACTERISTICS
1.1
Absolute Maximum Ratings †
VDD – VSS ................................................................................................................................... ......................................................6.5V
Current at Input Pins ................................................................................................................ ......................................................±2 mA
Analog Inputs (VIN+, VIN-) (Note 1) .................................................................................................................VSS – 1.0V to VDD + 1.0V
All Other Inputs and Outputs ...........................................................................................................................VSS – 0.3V to VDD + 0.3V
Difference Input Voltage...........................................................................................................................................................VDD – VSS
Output Short-Circuit Current ................................................................................................................ ...................................continuous
Current at Output and Supply Pins ............................................................................................................... ..............................±60 mA
Storage Temperature ................................................................................................................ .....................................-65°C to +150°C
Maximum Junction Temperature (TJ) ................................................................................................................ ...........................+150°C
ESD protection on all pins (HBM) 4 kV
Note 1: See Section 4.1.2, Input Voltage Limits.
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
1.2
Specifications
TABLE 1-1:
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, VDD = +2.4V to +5.5V, VSS = GND, TA = +25°C,
VCM = VDD/2, VOUT VDD/2, VL = VDD/2 and RL = 10 kto VL. (Refer to Figure 1-1).
Parameters
Sym
Min
Typ
Max
Units
VOS
-1.5
—
+1.5
mV
VOS/TA
—
±2.5
—
PSRR
75
90
—
dB
IB
—
±1
—
pA
Conditions
Input Offset
Input Offset Voltage
Input Offset Drift with Temperature
Power Supply Rejection Ratio
VDD = 3.0V, VCM = VDD/4
µV/°C TA = -40°C to +125°C
VCM = VDD/4
Input Bias Current and Impedance
Input Bias Current
—
8
—
pA
TA = +85°C
—
150
350
pA
TA = +125°C
Input Offset Current
IOS
—
±0.1
—
pA
Common Mode Input Impedance
ZCM
—
1013||6
—
||pF
Differential Input Impedance
ZDIFF
—
1013||6
—
||pF
Common Mode Input Voltage
Range
VCMR
VSS - 0.3
—
VDD + 0.3
V
Common Mode Rejection Ratio
CMRR
65
84
—
dB
VCM = -0.3V to 2.7V,
VDD = 2.4V
70
88
—
dB
VCM = -0.3V to 5.8V,
VDD = 5.5V
95
115
—
dB
0.2V < VOUT
min (R1,R2) >
FIGURE 4-3:
Inputs.
VSS – min(V1,V2)
2 mA
max(V1,V2) – VDD
2 mA
Protecting the Analog
In some applications, it may be necessary to prevent
excessive voltages from reaching the op amp inputs;
Figure 4-2 shows one approach to protect these inputs.
2012-2013 Microchip Technology Inc.
DS20002321C-page 15
MCP6491/2/4
4.1.4
NORMAL OPERATION
The inputs of the MCP6491/2/4 op amps use two
differential input stages in parallel. One operates at a
low Common mode input voltage (VCM), while the other
operates at a high VCM. With this topology, the device
operates with a VCM up to 0.3V above VDD and 0.3V
below VSS (refer to Figures 2-3 and 2-4). The input
offset voltage is measured at VCM = VSS – 0.3V and
VDD + 0.3V to ensure proper operation.
The transition between the input stages occurs when
VCM is near VDD – 1.4V (refer to Figures 2-3 and 2-4).
For the best distortion performance and gain linearity,
with non-inverting gains, avoid this region of operation.
Figure 4-5 gives the recommended RISO values for
different capacitive loads and gains. The x-axis is the
normalized load capacitance (CL/GN), where GN is the
circuit’s noise gain. For non-inverting gains, GN and the
Signal Gain are equal. For inverting gains, GN is
1 + |Signal Gain| (e.g., -1V/V gives GN = +2V/V).
After selecting RISO for your circuit, double check the
resulting frequency response peaking and step
response overshoot. Modify RISO’s value until the
response is reasonable. Bench evaluation and
simulations with the MCP6491/2/4 SPICE macro
model are helpful.
4.2
Rail-to-Rail Output
The output voltage range of the MCP6491/2/4 op amps
is 0.007V (typical) and 5.493V (typical) when
RL = 10 k is connected to VDD/2 and VDD = 5.5V.
Refer to Figures 2-23 and 2-24 for more information.
4.3
Capacitive Loads
Driving large capacitive loads can cause stability
problems for voltage feedback op amps. As the load
capacitance increases, the feedback loop’s phase
margin decreases and the closed-loop bandwidth is
reduced. This produces gain peaking in the frequency
response, with overshoot and ringing in the step
response. While a unity-gain buffer (G = +1V/V) is the
most sensitive to capacitive loads, all gains show the
same general behavior.
When driving large capacitive loads with these op
amps (e.g., > 100 pF when G = + 1V/V), a small series
resistor at the output (RISO in Figure 4-4) improves the
feedback loop’s phase margin (stability) by making the
output load resistive at higher frequencies. The
bandwidth will generally be lower than the bandwidth
with no capacitance load.
–
VIN
MCP649X
+
Reco
ommended R ISO (:)
1000
VDD = 5.5 V
RL = 10 kȍ
100
GN:
1 V/V
2 V/V
t 5 V/V
10
1
10p
1.E-11
100p
1n
10n
0.1µ 1.E-06
1µ
1.E-10
1.E-09
1.E-08
1.E-07
Normalized Load Capacitance; CL/GN (F)
FIGURE 4-5:
Recommended RISO Values
for Capacitive Loads.
4.4
Supply Bypass
With this family of operational amplifiers, the power
supply pin (VDD for single supply) should have a local
bypass capacitor (i.e., 0.01 µF to 0.1 µF) within 2 mm
for good high-frequency performance. It can use a bulk
capacitor (i.e., 1 µF or larger) within 100 mm to provide
large, slow currents. This bulk capacitor can be shared
with other analog parts.
RISO
VOUT
CL
FIGURE 4-4:
Output Resistor, RISO
Stabilizes Large Capacitive Loads.
DS20002321C-page 16
2012-2013 Microchip Technology Inc.
MCP6491/2/4
4.5
Unused Op Amps
4.6
An unused op amp in a quad package (MCP6494)
should be configured as shown in Figure 4-6. These
circuits prevent the output from toggling and causing
crosstalk. Circuit A sets the op amp at its minimum
noise gain. The resistor divider produces any desired
reference voltage within the output voltage range of the
op amp, and the op amp buffers that reference voltage.
Circuit B uses the minimum number of components
and operates as a comparator, but it may draw more
current.
¼ MCP6494 (A)
¼ MCP6494 (B)
VDD
VDD
R1
R2
PCB Surface Leakage
In applications where low-input bias current is critical,
PCB surface leakage effects need to be considered.
Surface leakage is caused by humidity, dust or other
contamination on the board. Under low-humidity
conditions, a typical resistance between nearby traces
is 1012. A 5V difference would cause 5 pA of current
to flow, which is greater than the MCP6491/2/4 family’s
bias current at +25°C (1 pA, typical).
The easiest way to reduce surface leakage is to use a
guard ring around sensitive pins (or traces). The guard
ring is biased at the same voltage as the sensitive pin.
An example of this type of layout is shown in
Figure 4-7.
VDD
Guard Ring
VIN– VIN+
VSS
VREF
R2
V REF = V DD -------------------R1 + R2
FIGURE 4-6:
Unused Op Amps.
FIGURE 4-7:
for Inverting Gain.
1.
2.
2012-2013 Microchip Technology Inc.
Example Guard Ring Layout
Non-Inverting Gain and Unity-Gain Buffer:
a.Connect the non-inverting pin (VIN+) to the
input with a wire that does not touch the
PCB surface.
b.Connect the guard ring to the inverting input
pin (VIN–). This biases the guard ring to the
Common mode input voltage.
Inverting Gain and Transimpedance Gain
Amplifiers (convert current to voltage, such as
photo detectors):
a.Connect the guard ring to the non-inverting
input pin (VIN+). This biases the guard ring
to the same reference voltage as the op
amp (e.g., VDD/2 or ground).
b.Connect the inverting pin (VIN–) to the input
with a wire that does not touch the PCB
surface.
DS20002321C-page 17
MCP6491/2/4
4.7
4.7.1
4.7.2
Application Circuits
PHOTO DETECTION
The MCP6491/2/4 op amps can be used to easily
convert the signal from a sensor that produces an
output current (such as a photo diode) into a voltage (a
transimpedance amplifier). This is implemented with a
single resistor (R2) in the feedback loop of the
amplifiers shown in Figure 4-8 and Figure 4-9. The
optional capacitor (C2) sometimes provides stability for
these circuits.
A photodiode configured in the Photovoltaic mode has
zero voltage potential placed across it (Figure 4-8). In
this mode, the light sensitivity and linearity is
maximized, making it best suited for precision
applications. The key amplifier specifications for this
application are: low-input bias current, Common mode
input voltage range (including ground), and rail-to-rail
output.
ACTIVE LOW PASS FILTER
The MCP6491/2/4 op amps’ low-input bias current
makes it possible for the designer to use larger
resistors and smaller capacitors for active low-pass
filter applications. However, as the resistance
increases, the noise generated also increases.
Parasitic capacitances and the large value resistors
could also modify the frequency response. These
trade-offs need to be considered when selecting circuit
elements.
Usually, the op amp bandwidth is 100x the filter cutoff
frequency (or higher) for good performance. It is
possible to have the op amp bandwidth 10x higher than
the cutoff frequency, thus having a design that is more
sensitive to component tolerances.
Figure 4-10 and Figure 4-11 show low-pass, secondorder, Butterworth filters with a cutoff frequency of
10 Hz. The filter in Figure 4-10 has a non-inverting gain
of +1 V/V, and the filter in Figure 4-11 has an inverting
gain of -1 V/V.
C2
C1
47 nF
R2
ID1
VDD
D1
Light
VOUT
R2
R1
1.27
M
768 k
–
MCP6491
VIN
+
C2
22 nF
+
MCP6491
–
VOUT = ID1*R2
FIGURE 4-8:
Photovoltaic Mode Detector.
In contrast, a photodiode that is configured in the
Photoconductive mode has a reverse bias voltage
across the photo-sensing element (Figure 4-9). This
decreases the diode capacitance, which facilitates
high-speed operation (e.g., high-speed digital
communications). However, the reverse bias voltage
also increased diode leakage current and caused
linearity errors.
fP = 10 Hz, G = +1 V/V
FIGURE 4-10:
Second-Order, Low-Pass
Butterworth Filter with Sallen-Key Topology.
R2
618 k
C2
R1
618 k
R2
ID1
D1
VBIAS
VOUT
–
DS20002321C-page 18
VOUT
C2
47 nF
–
VDD/2
+
VOUT = ID1*R2
VBIAS < 0V
FIGURE 4-9:
Detector.
C1
8.2 nF
MCP6491
MCP6491
+
R3
1.00 M
VIN
VDD
Light
VOUT
Photoconductive Mode
fP = 10 Hz, G = -1 V/V
FIGURE 4-11:
Second-Order, Low-Pass
Butterworth Filter with Multiple-Feedback
Topology.
2012-2013 Microchip Technology Inc.
MCP6491/2/4
4.7.3
PH ELECTRODE AMPLIFIER
The MCP6491/2/4 op amps can be used for sensing
applications where the sensor has high output
impedance, such as a pH electrode sensor; its output
impedance is in the range of 1 M to 1G. The key op
amp specifications for these kinds of applications are
low-input bias current and high-input impedance.
A typical sensing circuit is shown in Figure 4-12, it is
implemented with a non-inverting amplifier which has a
gain of 1+R2/R1. The input voltage error due to input
bias current is equal to IB*ROUT, which is amplified by
1+R2/R1 at the output. To minimize the voltage error
and get the VOUT with better accuracy, the IB must be
small enough.
R2
R1
–
VIN
MCP6491
VOUT
+
ROUT
pH electrode
VSEN
+
–
VSEN is the sensed voltage by pH electrode
ROUT is the pH electrode’s output impedance
FIGURE 4-12:
pH Electrode Amplifier.
2012-2013 Microchip Technology Inc.
DS20002321C-page 19
MCP6491/2/4
NOTES:
DS20002321C-page 20
2012-2013 Microchip Technology Inc.
MCP6491/2/4
5.0
DESIGN AIDS
Microchip Technology Inc. provides the basic design
tools needed for the MCP6491/2/4 family of op amps.
5.1
SPICE Macro Model
The latest SPICE macro model for the MCP6491/2/4
op amps is available on the Microchip web site at
www.microchip.com. The model was written and tested
in PSpice, owned by Orcad (Cadence®). For other
simulators, translation may be required.
The model covers a wide aspect of the op amp’s
electrical specifications. Not only does the model cover
voltage, current and resistance of the op amp, but it
also covers the temperature and noise effects on the
behavior of the op amp. The model has not been
verified outside the specification range listed in the op
amp data sheet. The model behaviors under these
conditions cannot be guaranteed to match the actual
op amp performance.
Moreover, the model is intended to be an initial design
tool. Bench testing is a very important part of any
design and cannot be replaced with simulations. Also,
simulation results using this macro model need to be
validated by comparing them to the data sheet
specifications and characteristic curves.
5.2
FilterLab Software
Microchip’s FilterLab software is an innovative software
tool that simplifies analog active filter (using op amps)
design. Available at no cost from the Microchip web site
at www.microchip.com/filterlab, the FilterLab design
tool provides full schematic diagrams of the filter circuit
with component values. It also outputs the filter circuit
in SPICE format, which can be used with the macro
model to simulate actual filter performance.
5.3
MAPS (Microchip Advanced Part
Selector)
MAPS is a software tool that helps semiconductor
professionals efficiently identify Microchip devices that
fit a particular design requirement. Available at no cost,
MAPS is an overall selection tool for Microchip’s
product portfolio that includes analog, memory, MCUs
and DSCs. Using this tool, you can define a filter to sort
features for a parametric search of devices and export
side-by-side technical comparison reports. Helpful links
are also provided for data sheets, purchases and
sampling of Microchip parts. The web site is available
at www.microchip.com/maps.
2012-2013 Microchip Technology Inc.
5.4
Analog Demonstration and
Evaluation Boards
Microchip offers a broad spectrum of Analog
Demonstration and Evaluation Boards that are
designed to help you achieve faster time to market. For
a complete listing of these boards and their
corresponding user’s guides and technical information,
visit the Microchip web site:
www.microchip.com/analogtools.
Some boards that are especially useful include:
•
•
•
•
•
•
MCP6XXX Amplifier Evaluation Board 1
MCP6XXX Amplifier Evaluation Board 2
MCP6XXX Amplifier Evaluation Board 3
MCP6XXX Amplifier Evaluation Board 4
Active Filter Demo Board Kit
5/6-Pin SOT-23 Evaluation Board, part number
VSUPEV2
• 8-Pin SOIC/MSOP/TSSOP/DIP Evaluation Board,
part number SOIC8EV
5.5
Application Notes
The following Microchip analog design note and
application notes are available on the Microchip web
site at www.microchip.com/appnotes, and are
recommended as supplemental reference resources.
• ADN003: “Select the Right Operational Amplifier
for your Filtering Circuits”, DS21821
• AN722: “Operational Amplifier Topologies and DC
Specifications”, DS00722
• AN723: “Operational Amplifier AC Specifications
and Applications”, DS00723
• AN884: “Driving Capacitive Loads With Op
Amps”, DS00884
• AN990: “Analog Sensor Conditioning Circuits –
An Overview”, DS00990
• AN1177: “Op Amp Precision Design: DC Errors”,
DS01177
• AN1228: “Op Amp Precision Design: Random
Noise”, DS01228
• AN1297: “Microchip’s Op Amp SPICE Macro
Models”’ DS01297
• AN1332: “Current Sensing Circuit Concepts and
Fundamentals”’ DS01332
• AN1494: “Using MCP6491 Op Amps for Photodetection Applications” DS01494
These application notes and others are listed in:
• “Signal Chain Design Guide”, DS21825
DS20002321C-page 21
MCP6491/2/4
NOTES:
DS20002321C-page 22
2012-2013 Microchip Technology Inc.
MCP6491/2/4
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
Example
5-Lead SOT-23 (MCP6491 only)
Part Number
MCP6491T-E/OT
Code
3GNN
5-Lead SC-70 (MCP6491 only)
Part Number
MCP6491T-E/LTY
8-Lead MSOP (3x3 mm) (MCP6492 only)
3G25
Example
Code
DR25
DRNN
Example
6492E
320256
8-Lead SOIC (3.90 mm) (MCP6492 only)
Example
MCP6492
E/SN1320
256
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
2012-2013 Microchip Technology Inc.
DS20002321C-page 23
MCP6491/2/4
8-Lead TDFN (2x3x0.75 mm) (MCP6492 only)
Example
Part Number
Code
MCP6492T-E/MNY
ABN
14-Lead SOIC (3.90 mm) (MCP6494 only)
ABN
320
25
Example
MCP6494
E/SL
1320256
14-Lead TSSOP (4.4 mm) (MCP6494 only)
XXXXXXXX
YYWW
NNN
DS20002321C-page 24
Example
6494E/ST
1320
256
2012-2013 Microchip Technology Inc.
MCP6491/2/4
5-Lead Plastic Small Outine Transistor (LTY) [SC70]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
D
b
3
1
2
E1
E
4
5
e
A
e
A2
c
A1
L
)
+
-0
1
*++*%,
*-
-
-.
/
!
1
.'3
4
2!"#
5
16%6
4
5
5
.'7
4
167
!
!
8!
.'+
4
!
9
+
+
2
+
%6
4
5
2
+
7
0
!
5
!
"#$ "
%
&'
((
Microchip
Technology
Drawing
%
&
(
# C04-083B
:2"
2012-2013 Microchip Technology Inc.
DS20002321C-page 25
MCP6491/2/4
5-Lead Plastic Small Outine Transistor (LTY) [SC70]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20002321C-page 26
2012-2013 Microchip Technology Inc.
MCP6491/2/4
9
6
( <
16
$==(((
=6
b
N
E
E1
3
2
1
e
e1
D
A2
A
c
φ
A1
L
L1
)
+
-0
1
*++*%,
*-
-.
/
-
!
+
1
;!"#
.
+
1
.'3
;
5
16%6
4;
5
8
5
!
.'7
5
8
167
8
5
4
.'+
5
8
;"#
!
9
+
+
5
2
9
+
8!
5
4
9
>
5
8>
+
%6
4
5
2
+
7
0
5
!
!
"#$ "
%
&'
((
%
& ( # :;"
2012-2013 Microchip Technology Inc.
DS20002321C-page 27
MCP6491/2/4
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20002321C-page 28
2012-2013 Microchip Technology Inc.
MCP6491/2/4
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2012-2013 Microchip Technology Inc.
DS20002321C-page 29
MCP6491/2/4
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20002321C-page 30
2012-2013 Microchip Technology Inc.
MCP6491/2/4
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2012-2013 Microchip Technology Inc.
DS20002321C-page 31
MCP6491/2/4
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20002321C-page 32
2012-2013 Microchip Technology Inc.
MCP6491/2/4
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2012-2013 Microchip Technology Inc.
DS20002321C-page 33
MCP6491/2/4
!"
#$%
&'
()
9
6
( <
16
$==(((
=6
DS20002321C-page 34
2012-2013 Microchip Technology Inc.
MCP6491/2/4
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2012-2013 Microchip Technology Inc.
DS20002321C-page 35
MCP6491/2/4
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20002321C-page 36
2012-2013 Microchip Technology Inc.
MCP6491/2/4
*
+"
,-
.
//%#0
&'
*+
9
6
( <
16
$==(((
=6
2012-2013 Microchip Technology Inc.
DS20002321C-page 37
MCP6491/2/4
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20002321C-page 38
2012-2013 Microchip Technology Inc.
MCP6491/2/4
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2012-2013 Microchip Technology Inc.
DS20002321C-page 39
MCP6491/2/4
9
6
( <
16
$==(((
=6
DS20002321C-page 40
2012-2013 Microchip Technology Inc.
MCP6491/2/4
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2012-2013 Microchip Technology Inc.
DS20002321C-page 41
MCP6491/2/4
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20002321C-page 42
2012-2013 Microchip Technology Inc.
MCP6491/2/4
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2012-2013 Microchip Technology Inc.
DS20002321C-page 43
MCP6491/2/4
NOTES:
DS20002321C-page 44
2012-2013 Microchip Technology Inc.
MCP6491/2/4
APPENDIX A:
REVISION HISTORY
Revision C (June 2013)
The following is the list of modifications:
1.
2.
3.
4.
5.
6.
7.
8.
Added new devices to the family (MCP6492 and
MCP6494) and related information throughout
the document.
Updated
thermal
package
resistance
information in Table 1-3.
Added Figure 2-35 in Section 2.0, Typical Performance Curves.
Updated Section 3.0, Pin Descriptions.
Added new Section 4.5, Unused Op Amps.
Updated the list of reference documents in
Section 5.5, Application Notes.
Added package markings and drawings for the
MCP6492 and MCP6494 devices.
Updated Product Identification System.
Revision B (October 2012)
The following is the list of modifications:
1.
2.
Updated the maximum low input offset voltage
value in the Features section.
Updated the minimum and maximum input
offset voltage in Table 1-1 “DC Electrical
Specifications”.
Revision A (September 2012)
• Original Release of this Document.
2012-2013 Microchip Technology Inc.
DS20002321C-page 45
MCP6491/2/4
NOTES:
DS20002321C-page 46
2012-2013 Microchip Technology Inc.
MCP6491/2/4
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
-X
/XX
Device
Temperature
Range
Package
Device:
MCP6491T:
MCP6492:
MCP6492T:
MCP6494:
MCP6494T:
Temperature Range:
E
Package:
LTY
OT
Single Op Amp (Tape and Reel)
(SC70, SOT-23)
Dual Op Amp (SOIC and MSOP only)
Dual Op Amp (Tape and Reel)
(SOIC, MSOP and 2x3 TDFN)
Quad Op Amp
Quad Op Amp (Tape and Reel)
(SOIC and TSSOP)
= -40°C to +125°C (Extended)
= Plastic Package (SC70), 5-lead
= Plastic Small Outline Transistor, (SOT-23),
5-lead
MNY* = Plastic Dual Flat, No Lead, (2x3 TDFN),
8-lead (TDFN)
SN
= Lead Plastic Small Outline (150 mil body),
8-lead (SOIC)
MS
= Plastic MSOP, 8-lead
SL
= Plastic Small Outline, (150 mil body),
14-lead (SOIC)
ST
= Plastic Thin Shrink Small Outline
(150 mil body), 14-lead (TSSOP)
* Y = Nickel palladium gold manufacturing designator. Only
available on the TDFN package.
2012-2013 Microchip Technology Inc.
Examples:
a)
MCP6491T-E/LTY:
b)
MCP6491T-E/OT:
c)
MCP6492-E/MS:
d)
MCP6492T-E/MS:
e)
MCP6492-E/SN:
f)
MCP6492T-E/SN:
g)
MCP6492T-E/MNY:
h)
MCP6494-E/SL:
i)
MCP6494T-E/SL:
j)
MCP6494-E/ST:
k)
MCP6494T-E/ST:
Tape and Reel,
Extended Temp.,
5LD SC70 package
Tape and Reel,
Extended Temp.,
5LD SOT-23 package
Extended Temp.,
8LD MSOP package
Tape and Reel,
Extended Temp.,
8LD MSOP package
Extended Temp.,
8LD SOIC package
Tape and Reel,
Extended Temp.,
8LD SOIC package
Tape and Reel,
Extended Temp.,
8LD 2x3 TDFN package
Extended Temp., 14LD
SOIC package
Tape and Reel,
Extended Temp., 14LD
SOIC package
Extended Temp.,
14LD TSSOP package
Tape and Reel,
Extended Temp.,
14LD TSSOP package
DS20002321C-page 47
MCP6491/2/4
NOTES:
DS20002321C-page 48
2012-2013 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2012-2013, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-62077-247-8
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
2012-2013 Microchip Technology Inc.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS20002321C-page 49
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Japan - Osaka
Tel: 81-6-6152-7160
Fax: 81-6-6152-9310
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Cleveland
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
Santa Clara
Santa Clara, CA
Tel: 408-961-6444
Fax: 408-961-6445
Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
China - Beijing
Tel: 86-10-8569-7000
Fax: 86-10-8528-2104
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
China - Hangzhou
Tel: 86-571-2819-3187
Fax: 86-571-2819-3189
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
China - Hong Kong SAR
Tel: 852-2943-5100
Fax: 852-2401-3431
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
China - Shenzhen
Tel: 86-755-8864-2200
Fax: 86-755-8203-1760
Taiwan - Kaohsiung
Tel: 886-7-213-7828
Fax: 886-7-330-9305
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
DS20002321C-page 50
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Japan - Tokyo
Tel: 81-3-6880- 3770
Fax: 81-3-6880-3771
11/29/12
2012-2013 Microchip Technology Inc.