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MCP6494T-E/STVAO

MCP6494T-E/STVAO

  • 厂商:

    ACTEL(微芯科技)

  • 封装:

    TSSOP-14_5X4.4MM

  • 描述:

    QUAD 8 MHZ OP E TEMP

  • 数据手册
  • 价格&库存
MCP6494T-E/STVAO 数据手册
MCP6491/2/4 7.5 MHz, Low-Input Bias Current Op Amps Features Description • Low-Input Bias Current - 150 pA (typical, TA = +125°C) • Low Quiescent Current - 530 µA/amplifier (typical) • Low-Input Offset Voltage - ±1.5 mV (maximum) • Supply Voltage Range: 2.4V to 5.5V • Rail-to-Rail Input/Output • Gain Bandwidth Product: 7.5 MHz (typical) • Slew Rate: 6 V/µs (typical) • Unity Gain Stable • No Phase Reversal • Small Packages - Singles in SC70-5, SOT-23-5 • Extended Temperature Range - -40°C to +125°C The Microchip MCP6491/2/4 family of operational amplifiers (op amps) has low-input bias current (150 pA, typical at 125°C) and rail-to-rail input and output operation. This family is unity gain stable and has a gain bandwidth product of 7.5 MHz (typical). These devices operate with a single-supply voltage as low as 2.4V, while only drawing 530 µA/amplifier (typical) of quiescent current. These features make the family of op amps well suited for photodiode amplifier, pH electrode amplifier, low leakage amplifier, and battery-powered signal conditioning applications, etc. The MCP6491/2/4 family is offered in single (MCP6491), dual (MCP6492), quad (MCP6494) packages. All devices are designed using an advanced CMOS process and fully specified in extended temperature range from -40°C to +125°C. Related Parts • MCP6471/2/4: 2 MHz, Low-Input Bias Current Op Amps • MCP6481/2/4: 4 MHz, Low-Input Bias Current Op Amps Applications • • • • • • Photodiode Amplifier pH Electrode Amplifier Low Leakage Amplifier Piezoelectric Transducer Amplifier Active Analog Filter Battery-Powered Signal Conditioning Design Aids • • • • • SPICE Macro Models FilterLab® Software MAPS (Microchip Advanced Part Selector) Analog Demonstration and Evaluation Boards Application Notes Package Types MCP6491 SC70, SOT-23 VOUT 1 VSS 2 VIN+ 3 5 VDD 4 VIN– MCP6492 SOIC, MSOP MCP6492 2x3 TDFN* VOUTA 1 VINA– 2 8 VDD 7 VOUTB VOUTA 1 VINA+ 3 VSS 4 6 VINB– 5 VINB+ VINA+ 3 VSS 4 * Includes Exposed Thermal Pad (EP); see Table 3-1.  2012-2013 Microchip Technology Inc. VINA– 2 EP 9 MCP6494 SOIC, TSSOP 8 VDD 7 VOUTB VOUTA 1 VINA– 2 14 VOUTD 13 VIND– 6 VINB– 5 VINB+ VINA+ 3 VDD 4 VINB+ 5 12 VIND+ 11 VSS VINB– 6 VOUTB 7 10 VINC+ 9 VINC– 8 VOUTC DS20002321C-page 1 MCP6491/2/4 Typical Application C2 R2 VOUT ID1 VDD – D1 Light MCP649X + Photodiode Amplifier DS20002321C-page 2  2012-2013 Microchip Technology Inc. MCP6491/2/4 1.0 ELECTRICAL CHARACTERISTICS 1.1 Absolute Maximum Ratings † VDD – VSS ................................................................................................................................... ......................................................6.5V Current at Input Pins ................................................................................................................ ......................................................±2 mA Analog Inputs (VIN+, VIN-) (Note 1) .................................................................................................................VSS – 1.0V to VDD + 1.0V All Other Inputs and Outputs ...........................................................................................................................VSS – 0.3V to VDD + 0.3V Difference Input Voltage...........................................................................................................................................................VDD – VSS Output Short-Circuit Current ................................................................................................................ ...................................continuous Current at Output and Supply Pins ............................................................................................................... ..............................±60 mA Storage Temperature ................................................................................................................ .....................................-65°C to +150°C Maximum Junction Temperature (TJ) ................................................................................................................ ...........................+150°C ESD protection on all pins (HBM)  4 kV Note 1: See Section 4.1.2, Input Voltage Limits. † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. 1.2 Specifications TABLE 1-1: DC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, VDD = +2.4V to +5.5V, VSS = GND, TA = +25°C, VCM = VDD/2, VOUT  VDD/2, VL = VDD/2 and RL = 10 kto VL. (Refer to Figure 1-1). Parameters Sym Min Typ Max Units VOS -1.5 — +1.5 mV VOS/TA — ±2.5 — PSRR 75 90 — dB IB — ±1 — pA Conditions Input Offset Input Offset Voltage Input Offset Drift with Temperature Power Supply Rejection Ratio VDD = 3.0V, VCM = VDD/4 µV/°C TA = -40°C to +125°C VCM = VDD/4 Input Bias Current and Impedance Input Bias Current — 8 — pA TA = +85°C — 150 350 pA TA = +125°C Input Offset Current IOS — ±0.1 — pA Common Mode Input Impedance ZCM — 1013||6 — ||pF Differential Input Impedance ZDIFF — 1013||6 — ||pF Common Mode Input Voltage Range VCMR VSS - 0.3 — VDD + 0.3 V Common Mode Rejection Ratio CMRR 65 84 — dB VCM = -0.3V to 2.7V, VDD = 2.4V 70 88 — dB VCM = -0.3V to 5.8V, VDD = 5.5V 95 115 — dB 0.2V < VOUT min (R1,R2) > FIGURE 4-3: Inputs. VSS – min(V1,V2) 2 mA max(V1,V2) – VDD 2 mA Protecting the Analog In some applications, it may be necessary to prevent excessive voltages from reaching the op amp inputs; Figure 4-2 shows one approach to protect these inputs.  2012-2013 Microchip Technology Inc. DS20002321C-page 15 MCP6491/2/4 4.1.4 NORMAL OPERATION The inputs of the MCP6491/2/4 op amps use two differential input stages in parallel. One operates at a low Common mode input voltage (VCM), while the other operates at a high VCM. With this topology, the device operates with a VCM up to 0.3V above VDD and 0.3V below VSS (refer to Figures 2-3 and 2-4). The input offset voltage is measured at VCM = VSS – 0.3V and VDD + 0.3V to ensure proper operation. The transition between the input stages occurs when VCM is near VDD – 1.4V (refer to Figures 2-3 and 2-4). For the best distortion performance and gain linearity, with non-inverting gains, avoid this region of operation. Figure 4-5 gives the recommended RISO values for different capacitive loads and gains. The x-axis is the normalized load capacitance (CL/GN), where GN is the circuit’s noise gain. For non-inverting gains, GN and the Signal Gain are equal. For inverting gains, GN is 1 + |Signal Gain| (e.g., -1V/V gives GN = +2V/V). After selecting RISO for your circuit, double check the resulting frequency response peaking and step response overshoot. Modify RISO’s value until the response is reasonable. Bench evaluation and simulations with the MCP6491/2/4 SPICE macro model are helpful. 4.2 Rail-to-Rail Output The output voltage range of the MCP6491/2/4 op amps is 0.007V (typical) and 5.493V (typical) when RL = 10 k is connected to VDD/2 and VDD = 5.5V. Refer to Figures 2-23 and 2-24 for more information. 4.3 Capacitive Loads Driving large capacitive loads can cause stability problems for voltage feedback op amps. As the load capacitance increases, the feedback loop’s phase margin decreases and the closed-loop bandwidth is reduced. This produces gain peaking in the frequency response, with overshoot and ringing in the step response. While a unity-gain buffer (G = +1V/V) is the most sensitive to capacitive loads, all gains show the same general behavior. When driving large capacitive loads with these op amps (e.g., > 100 pF when G = + 1V/V), a small series resistor at the output (RISO in Figure 4-4) improves the feedback loop’s phase margin (stability) by making the output load resistive at higher frequencies. The bandwidth will generally be lower than the bandwidth with no capacitance load. – VIN MCP649X + Reco ommended R ISO (:) 1000 VDD = 5.5 V RL = 10 kȍ 100 GN: 1 V/V 2 V/V t 5 V/V 10 1 10p 1.E-11 100p 1n 10n 0.1µ 1.E-06 1µ 1.E-10 1.E-09 1.E-08 1.E-07 Normalized Load Capacitance; CL/GN (F) FIGURE 4-5: Recommended RISO Values for Capacitive Loads. 4.4 Supply Bypass With this family of operational amplifiers, the power supply pin (VDD for single supply) should have a local bypass capacitor (i.e., 0.01 µF to 0.1 µF) within 2 mm for good high-frequency performance. It can use a bulk capacitor (i.e., 1 µF or larger) within 100 mm to provide large, slow currents. This bulk capacitor can be shared with other analog parts. RISO VOUT CL FIGURE 4-4: Output Resistor, RISO Stabilizes Large Capacitive Loads. DS20002321C-page 16  2012-2013 Microchip Technology Inc. MCP6491/2/4 4.5 Unused Op Amps 4.6 An unused op amp in a quad package (MCP6494) should be configured as shown in Figure 4-6. These circuits prevent the output from toggling and causing crosstalk. Circuit A sets the op amp at its minimum noise gain. The resistor divider produces any desired reference voltage within the output voltage range of the op amp, and the op amp buffers that reference voltage. Circuit B uses the minimum number of components and operates as a comparator, but it may draw more current. ¼ MCP6494 (A) ¼ MCP6494 (B) VDD VDD R1 R2 PCB Surface Leakage In applications where low-input bias current is critical, PCB surface leakage effects need to be considered. Surface leakage is caused by humidity, dust or other contamination on the board. Under low-humidity conditions, a typical resistance between nearby traces is 1012. A 5V difference would cause 5 pA of current to flow, which is greater than the MCP6491/2/4 family’s bias current at +25°C (1 pA, typical). The easiest way to reduce surface leakage is to use a guard ring around sensitive pins (or traces). The guard ring is biased at the same voltage as the sensitive pin. An example of this type of layout is shown in Figure 4-7. VDD Guard Ring VIN– VIN+ VSS VREF R2 V REF = V DD  -------------------R1 + R2 FIGURE 4-6: Unused Op Amps. FIGURE 4-7: for Inverting Gain. 1. 2.  2012-2013 Microchip Technology Inc. Example Guard Ring Layout Non-Inverting Gain and Unity-Gain Buffer: a.Connect the non-inverting pin (VIN+) to the input with a wire that does not touch the PCB surface. b.Connect the guard ring to the inverting input pin (VIN–). This biases the guard ring to the Common mode input voltage. Inverting Gain and Transimpedance Gain Amplifiers (convert current to voltage, such as photo detectors): a.Connect the guard ring to the non-inverting input pin (VIN+). This biases the guard ring to the same reference voltage as the op amp (e.g., VDD/2 or ground). b.Connect the inverting pin (VIN–) to the input with a wire that does not touch the PCB surface. DS20002321C-page 17 MCP6491/2/4 4.7 4.7.1 4.7.2 Application Circuits PHOTO DETECTION The MCP6491/2/4 op amps can be used to easily convert the signal from a sensor that produces an output current (such as a photo diode) into a voltage (a transimpedance amplifier). This is implemented with a single resistor (R2) in the feedback loop of the amplifiers shown in Figure 4-8 and Figure 4-9. The optional capacitor (C2) sometimes provides stability for these circuits. A photodiode configured in the Photovoltaic mode has zero voltage potential placed across it (Figure 4-8). In this mode, the light sensitivity and linearity is maximized, making it best suited for precision applications. The key amplifier specifications for this application are: low-input bias current, Common mode input voltage range (including ground), and rail-to-rail output. ACTIVE LOW PASS FILTER The MCP6491/2/4 op amps’ low-input bias current makes it possible for the designer to use larger resistors and smaller capacitors for active low-pass filter applications. However, as the resistance increases, the noise generated also increases. Parasitic capacitances and the large value resistors could also modify the frequency response. These trade-offs need to be considered when selecting circuit elements. Usually, the op amp bandwidth is 100x the filter cutoff frequency (or higher) for good performance. It is possible to have the op amp bandwidth 10x higher than the cutoff frequency, thus having a design that is more sensitive to component tolerances. Figure 4-10 and Figure 4-11 show low-pass, secondorder, Butterworth filters with a cutoff frequency of 10 Hz. The filter in Figure 4-10 has a non-inverting gain of +1 V/V, and the filter in Figure 4-11 has an inverting gain of -1 V/V. C2 C1 47 nF R2 ID1 VDD D1 Light VOUT R2 R1 1.27 M 768 k – MCP6491 VIN + C2 22 nF + MCP6491 – VOUT = ID1*R2 FIGURE 4-8: Photovoltaic Mode Detector. In contrast, a photodiode that is configured in the Photoconductive mode has a reverse bias voltage across the photo-sensing element (Figure 4-9). This decreases the diode capacitance, which facilitates high-speed operation (e.g., high-speed digital communications). However, the reverse bias voltage also increased diode leakage current and caused linearity errors. fP = 10 Hz, G = +1 V/V FIGURE 4-10: Second-Order, Low-Pass Butterworth Filter with Sallen-Key Topology. R2 618 k C2 R1 618 k R2 ID1 D1 VBIAS VOUT – DS20002321C-page 18 VOUT C2 47 nF – VDD/2 + VOUT = ID1*R2 VBIAS < 0V FIGURE 4-9: Detector. C1 8.2 nF MCP6491 MCP6491 + R3 1.00 M VIN VDD Light VOUT Photoconductive Mode fP = 10 Hz, G = -1 V/V FIGURE 4-11: Second-Order, Low-Pass Butterworth Filter with Multiple-Feedback Topology.  2012-2013 Microchip Technology Inc. MCP6491/2/4 4.7.3 PH ELECTRODE AMPLIFIER The MCP6491/2/4 op amps can be used for sensing applications where the sensor has high output impedance, such as a pH electrode sensor; its output impedance is in the range of 1 M to 1G. The key op amp specifications for these kinds of applications are low-input bias current and high-input impedance. A typical sensing circuit is shown in Figure 4-12, it is implemented with a non-inverting amplifier which has a gain of 1+R2/R1. The input voltage error due to input bias current is equal to IB*ROUT, which is amplified by 1+R2/R1 at the output. To minimize the voltage error and get the VOUT with better accuracy, the IB must be small enough. R2 R1 – VIN MCP6491 VOUT + ROUT pH electrode VSEN + – VSEN is the sensed voltage by pH electrode ROUT is the pH electrode’s output impedance FIGURE 4-12: pH Electrode Amplifier.  2012-2013 Microchip Technology Inc. DS20002321C-page 19 MCP6491/2/4 NOTES: DS20002321C-page 20  2012-2013 Microchip Technology Inc. MCP6491/2/4 5.0 DESIGN AIDS Microchip Technology Inc. provides the basic design tools needed for the MCP6491/2/4 family of op amps. 5.1 SPICE Macro Model The latest SPICE macro model for the MCP6491/2/4 op amps is available on the Microchip web site at www.microchip.com. The model was written and tested in PSpice, owned by Orcad (Cadence®). For other simulators, translation may be required. The model covers a wide aspect of the op amp’s electrical specifications. Not only does the model cover voltage, current and resistance of the op amp, but it also covers the temperature and noise effects on the behavior of the op amp. The model has not been verified outside the specification range listed in the op amp data sheet. The model behaviors under these conditions cannot be guaranteed to match the actual op amp performance. Moreover, the model is intended to be an initial design tool. Bench testing is a very important part of any design and cannot be replaced with simulations. Also, simulation results using this macro model need to be validated by comparing them to the data sheet specifications and characteristic curves. 5.2 FilterLab Software Microchip’s FilterLab software is an innovative software tool that simplifies analog active filter (using op amps) design. Available at no cost from the Microchip web site at www.microchip.com/filterlab, the FilterLab design tool provides full schematic diagrams of the filter circuit with component values. It also outputs the filter circuit in SPICE format, which can be used with the macro model to simulate actual filter performance. 5.3 MAPS (Microchip Advanced Part Selector) MAPS is a software tool that helps semiconductor professionals efficiently identify Microchip devices that fit a particular design requirement. Available at no cost, MAPS is an overall selection tool for Microchip’s product portfolio that includes analog, memory, MCUs and DSCs. Using this tool, you can define a filter to sort features for a parametric search of devices and export side-by-side technical comparison reports. Helpful links are also provided for data sheets, purchases and sampling of Microchip parts. The web site is available at www.microchip.com/maps.  2012-2013 Microchip Technology Inc. 5.4 Analog Demonstration and Evaluation Boards Microchip offers a broad spectrum of Analog Demonstration and Evaluation Boards that are designed to help you achieve faster time to market. For a complete listing of these boards and their corresponding user’s guides and technical information, visit the Microchip web site: www.microchip.com/analogtools. Some boards that are especially useful include: • • • • • • MCP6XXX Amplifier Evaluation Board 1 MCP6XXX Amplifier Evaluation Board 2 MCP6XXX Amplifier Evaluation Board 3 MCP6XXX Amplifier Evaluation Board 4 Active Filter Demo Board Kit 5/6-Pin SOT-23 Evaluation Board, part number VSUPEV2 • 8-Pin SOIC/MSOP/TSSOP/DIP Evaluation Board, part number SOIC8EV 5.5 Application Notes The following Microchip analog design note and application notes are available on the Microchip web site at www.microchip.com/appnotes, and are recommended as supplemental reference resources. • ADN003: “Select the Right Operational Amplifier for your Filtering Circuits”, DS21821 • AN722: “Operational Amplifier Topologies and DC Specifications”, DS00722 • AN723: “Operational Amplifier AC Specifications and Applications”, DS00723 • AN884: “Driving Capacitive Loads With Op Amps”, DS00884 • AN990: “Analog Sensor Conditioning Circuits – An Overview”, DS00990 • AN1177: “Op Amp Precision Design: DC Errors”, DS01177 • AN1228: “Op Amp Precision Design: Random Noise”, DS01228 • AN1297: “Microchip’s Op Amp SPICE Macro Models”’ DS01297 • AN1332: “Current Sensing Circuit Concepts and Fundamentals”’ DS01332 • AN1494: “Using MCP6491 Op Amps for Photodetection Applications” DS01494 These application notes and others are listed in: • “Signal Chain Design Guide”, DS21825 DS20002321C-page 21 MCP6491/2/4 NOTES: DS20002321C-page 22  2012-2013 Microchip Technology Inc. MCP6491/2/4 6.0 PACKAGING INFORMATION 6.1 Package Marking Information Example 5-Lead SOT-23 (MCP6491 only) Part Number MCP6491T-E/OT Code 3GNN 5-Lead SC-70 (MCP6491 only) Part Number MCP6491T-E/LTY 8-Lead MSOP (3x3 mm) (MCP6492 only) 3G25 Example Code DR25 DRNN Example 6492E 320256 8-Lead SOIC (3.90 mm) (MCP6492 only) Example MCP6492 E/SN1320 256 Legend: XX...X Y YY WW NNN e3 * Note: Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information.  2012-2013 Microchip Technology Inc. DS20002321C-page 23 MCP6491/2/4 8-Lead TDFN (2x3x0.75 mm) (MCP6492 only) Example Part Number Code MCP6492T-E/MNY ABN 14-Lead SOIC (3.90 mm) (MCP6494 only) ABN 320 25 Example MCP6494 E/SL 1320256 14-Lead TSSOP (4.4 mm) (MCP6494 only) XXXXXXXX YYWW NNN DS20002321C-page 24 Example 6494E/ST 1320 256  2012-2013 Microchip Technology Inc. MCP6491/2/4 5-Lead Plastic Small Outine Transistor (LTY) [SC70] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging D b 3 1 2 E1 E 4 5 e A e A2 c A1 L )    + -0  1 *++*%, *- - -. / ! 1  .'  3  4 2! "# 5    1 6  %6  4 5       5     .'  7   4     1 6  7   ! ! 8! .'  +  4  ! 9  + +    2 + %6  4 5 2 + 7  0 ! 5                                                       ! "#$ "     %  &   '   ( (      Microchip Technology Drawing   %  &  ( # C04-083B :2"  2012-2013 Microchip Technology Inc. DS20002321C-page 25 MCP6491/2/4 5-Lead Plastic Small Outine Transistor (LTY) [SC70] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS20002321C-page 26  2012-2013 Microchip Technology Inc. MCP6491/2/4              9       6   ( <       1 6         $==(((  = 6  b N E E1 3 2 1 e e1 D A2 A c φ A1 L L1 )    + -0  1 *++*%, *- -. / - ! + 1  ;! "# .   + 1  .'  3  ; 5    1 6  %6  4; 5 8      5 ! .'  7    5 8    1 6  7   8 5 4 .'  +   5 8 ; "#  ! 9  + +  5 2 9  + 8! 5 4 9    > 5 8> + %6  4 5 2 + 7  0  5 !                                                     ! "#$ "     %  &   '   ( (        %  &  ( # :;"  2012-2013 Microchip Technology Inc. DS20002321C-page 27 MCP6491/2/4 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS20002321C-page 28  2012-2013 Microchip Technology Inc. MCP6491/2/4 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging  2012-2013 Microchip Technology Inc. DS20002321C-page 29 MCP6491/2/4 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS20002321C-page 30  2012-2013 Microchip Technology Inc. MCP6491/2/4 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging  2012-2013 Microchip Technology Inc. DS20002321C-page 31 MCP6491/2/4 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS20002321C-page 32  2012-2013 Microchip Technology Inc. MCP6491/2/4 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging  2012-2013 Microchip Technology Inc. DS20002321C-page 33 MCP6491/2/4          !" #$%  & ' ()  9       6   ( <       1 6         $==(((  = 6  DS20002321C-page 34  2012-2013 Microchip Technology Inc. MCP6491/2/4 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging  2012-2013 Microchip Technology Inc. DS20002321C-page 35 MCP6491/2/4 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS20002321C-page 36  2012-2013 Microchip Technology Inc. MCP6491/2/4     *  + "    , - . //%#0  & ' *+  9       6   ( <       1 6         $==(((  = 6   2012-2013 Microchip Technology Inc. DS20002321C-page 37 MCP6491/2/4 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS20002321C-page 38  2012-2013 Microchip Technology Inc. MCP6491/2/4 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging  2012-2013 Microchip Technology Inc. DS20002321C-page 39 MCP6491/2/4  9       6   ( <       1 6         $==(((  = 6  DS20002321C-page 40  2012-2013 Microchip Technology Inc. MCP6491/2/4 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging  2012-2013 Microchip Technology Inc. DS20002321C-page 41 MCP6491/2/4 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS20002321C-page 42  2012-2013 Microchip Technology Inc. MCP6491/2/4 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging  2012-2013 Microchip Technology Inc. DS20002321C-page 43 MCP6491/2/4 NOTES: DS20002321C-page 44  2012-2013 Microchip Technology Inc. MCP6491/2/4 APPENDIX A: REVISION HISTORY Revision C (June 2013) The following is the list of modifications: 1. 2. 3. 4. 5. 6. 7. 8. Added new devices to the family (MCP6492 and MCP6494) and related information throughout the document. Updated thermal package resistance information in Table 1-3. Added Figure 2-35 in Section 2.0, Typical Performance Curves. Updated Section 3.0, Pin Descriptions. Added new Section 4.5, Unused Op Amps. Updated the list of reference documents in Section 5.5, Application Notes. Added package markings and drawings for the MCP6492 and MCP6494 devices. Updated Product Identification System. Revision B (October 2012) The following is the list of modifications: 1. 2. Updated the maximum low input offset voltage value in the Features section. Updated the minimum and maximum input offset voltage in Table 1-1 “DC Electrical Specifications”. Revision A (September 2012) • Original Release of this Document.  2012-2013 Microchip Technology Inc. DS20002321C-page 45 MCP6491/2/4 NOTES: DS20002321C-page 46  2012-2013 Microchip Technology Inc. MCP6491/2/4 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. -X /XX Device Temperature Range Package Device: MCP6491T: MCP6492: MCP6492T: MCP6494: MCP6494T: Temperature Range: E Package: LTY OT Single Op Amp (Tape and Reel) (SC70, SOT-23) Dual Op Amp (SOIC and MSOP only) Dual Op Amp (Tape and Reel) (SOIC, MSOP and 2x3 TDFN) Quad Op Amp Quad Op Amp (Tape and Reel) (SOIC and TSSOP) = -40°C to +125°C (Extended) = Plastic Package (SC70), 5-lead = Plastic Small Outline Transistor, (SOT-23), 5-lead MNY* = Plastic Dual Flat, No Lead, (2x3 TDFN), 8-lead (TDFN) SN = Lead Plastic Small Outline (150 mil body), 8-lead (SOIC) MS = Plastic MSOP, 8-lead SL = Plastic Small Outline, (150 mil body), 14-lead (SOIC) ST = Plastic Thin Shrink Small Outline (150 mil body), 14-lead (TSSOP) * Y = Nickel palladium gold manufacturing designator. Only available on the TDFN package.  2012-2013 Microchip Technology Inc. Examples: a) MCP6491T-E/LTY: b) MCP6491T-E/OT: c) MCP6492-E/MS: d) MCP6492T-E/MS: e) MCP6492-E/SN: f) MCP6492T-E/SN: g) MCP6492T-E/MNY: h) MCP6494-E/SL: i) MCP6494T-E/SL: j) MCP6494-E/ST: k) MCP6494T-E/ST: Tape and Reel, Extended Temp., 5LD SC70 package Tape and Reel, Extended Temp., 5LD SOT-23 package Extended Temp., 8LD MSOP package Tape and Reel, Extended Temp., 8LD MSOP package Extended Temp., 8LD SOIC package Tape and Reel, Extended Temp., 8LD SOIC package Tape and Reel, Extended Temp., 8LD 2x3 TDFN package Extended Temp., 14LD SOIC package Tape and Reel, Extended Temp., 14LD SOIC package Extended Temp., 14LD TSSOP package Tape and Reel, Extended Temp., 14LD TSSOP package DS20002321C-page 47 MCP6491/2/4 NOTES: DS20002321C-page 48  2012-2013 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MTP, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. Analog-for-the-Digital Age, Application Maestro, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O, Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA and Z-Scale are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. GestIC and ULPP are registered trademarks of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2012-2013, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 978-1-62077-247-8 QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 ==  2012-2013 Microchip Technology Inc. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 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MCP6494T-E/STVAO 价格&库存

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