MCP6V01T-E/MNY

MCP6V01T-E/MNY

  • 厂商:

    ACTEL(微芯科技)

  • 封装:

    WFDFN8_EP

  • 描述:

    MCP6V01T-E/MNY

  • 数据手册
  • 价格&库存
MCP6V01T-E/MNY 数据手册
MCP6V01/2/3 300 µA, Auto-Zeroed Op Amps Features Description • High DC Precision: - VOS Drift: ±50 nV/°C (maximum) - VOS: ±2 µV (maximum) - AOL: 130 dB (minimum) - PSRR: 130 dB (minimum) - CMRR: 130 dB (minimum) - Eni: 2.5 µVP-P (typical), f = 0.1 Hz to 10 Hz - Eni: 0.79 µVp-p (typical), f = 0.01 Hz to 1 Hz • Low Power and Supply Voltages: - IQ: 300 µA/amplifier (typical) - Wide Supply Voltage Range: 1.8V to 5.5V • Easy to Use: - Rail-to-Rail Input/Output - Gain Bandwidth Product: 1.3 MHz (typical) - Unity Gain Stable - Available in Single and Dual - Single with Chip Select (CS): MCP6V03 • Extended Temperature Range: -40°C to +125°C The Microchip Technology Inc. MCP6V01/2/3 family of operational amplifiers has input offset voltage correction for very low offset and offset drift. These devices have a wide gain bandwidth product (1.3 MHz, typical) and strongly reject switching noise. They are unity gain stable, have no 1/f noise, and have good PSRR and CMRR. These products operate with a single supply voltage as low as 1.8V, while drawing 300 µA/amplifier (typical) of quiescent current. Typical Applications • • • • • Portable Instrumentation Sensor Conditioning Temperature Measurement DC Offset Correction Medical Instrumentation Design Aids • • • • • • SPICE Macro Models FilterLab® Software Mindi™ Circuit Designer & Simulator Microchip Advanced Part Selector (MAPS) Analog Demonstration and Evaluation Boards Application Notes Related Parts The Microchip Technology Inc. MCP6V01/2/3 op amps are offered in single (MCP6V01), single with Chip Select (CS) (MCP6V03), and dual (MCP6V02). They are designed in an advanced CMOS process. Package Types (top view) MCP6V01 SOIC MCP6V01 2x3 TDFN * NC 1 8 NC NC 1 VIN– 2 7 VDD VIN– 2 VIN+ 3 VSS 4 6 VOUT 5 NC VIN+ 3 VINA– 2 VINA+ 3 VSS 4 7 VDD 6 VOUT 5 NC MCP6V02 4x4 DFN * 8 VDD VOUTA 7 VOUTB V – INA 6 VINB– V + INA 5 VINB+ V SS MCP6V03 SOIC EP 9 VSS 4 MCP6V02 SOIC VOUTA 1 8 NC 8 VDD 1 2 3 EP 9 7 VOUTB 6 VINB– 5 VINB+ 4 MCP6V03 2x3 TDFN * NC 1 NC 1 8 CS VIN– 2 7 VDD VIN– 2 VIN+ 3 VSS 4 6 VOUT 5 NC VIN+ 3 VSS 4 8 CS EP 9 7 VDD 6 VOUT 5 NC * Includes Exposed Thermal Pad (EP); see Table 3-1. • MCP6V06/7/8: Non-spread clock, lower noise © 2008 Microchip Technology Inc. DS22058C-page 1 MCP6V01/2/3 Typical Application Circuit VIN R1 R2 R2 VDD/2 R3 VOUT C2 3 kΩ MCP6XXX MCP6V01 Offset Voltage Correction for Power Driver DS22058C-page 2 © 2008 Microchip Technology Inc. MCP6V01/2/3 1.0 ELECTRICAL CHARACTERISTICS 1.1 Absolute Maximum Ratings † † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. VDD – VSS .......................................................................6.5V Current at Input Pins ....................................................±2 mA Analog Inputs (VIN+ and VIN–) †† ... VSS – 1.0V to VDD+1.0V All other Inputs and Outputs ............ VSS – 0.3V to VDD+0.3V Difference Input voltage ...................................... |VDD – VSS| Output Short Circuit Current ................................ Continuous Current at Output and Supply Pins ............................±30 mA Storage Temperature ...................................-65°C to +150°C Max. Junction Temperature ........................................ +150°C ESD protection on all pins (HBM, MM) ................≥ 4 kV, 300V 1.2 †† See Section 4.2.1 “Rail-to-Rail Inputs”. Specifications TABLE 1-1: DC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 20 kΩ to VL, and CS = GND (refer to Figure 1-5 and Figure 1-6). Parameters Sym Min Typ Max Units Conditions Input Offset Input Offset Voltage VOS -2.0 — +2.0 µV Input Offset Voltage Drift with Temperature (linear Temp. Co.) TC1 -50 — +50 nV/°C Input Offset Voltage Quadratic Temp. Co. TC2 — ±0.1 — PSRR 130 143 — Input Bias Current IB — ±1 — pA Input Bias Current across Temperature IB — 60 — pA TA = +85°C IB — 600 5000 pA TA = +125°C IOS — -30 — pA Power Supply Rejection TA = +25°C (Note 1) TA = -40 to +125°C (Note 1) nV/°C2 TA = -40 to +125°C dB (Note 1) Input Bias Current and Impedance Input Offset Current IOS — -50 — pA TA = +85°C IOS -1000 -75 1000 pA TA = +125°C Common Mode Input Impedance ZCM — 1013||6 — Ω||pF Differential Input Impedance ZDIFF — 1013||6 — Ω||pF Common-Mode Input Voltage Range VCMR VSS − 0.20 — VDD + 0.20 V (Note 2) Common-Mode Rejection CMRR 130 142 — dB VDD = 1.8V, VCM = -0.2V to 2.0V (Note 1, Note 2) CMRR 140 152 — dB VDD = 5.5V, VCM = -0.2V to 5.7V (Note 1, Note 2) AOL 130 145 — dB VDD = 1.8V, VOUT = 0.2V to 1.6V (Note 1) AOL 140 156 — dB VDD = 5.5V, VOUT = 0.2V to 5.3V (Note 1) Input Offset Current across Temperature Common Mode Open-Loop Gain DC Open-Loop Gain (large signal) Note 1: 2: Set by design and characterization. Due to thermal junction and other effects in the production environment, these parts can only be screened in production (except TC1; see Appendix B: “Offset Related Test Screens”). Figure 2-18 shows how VCMR changed across temperature for the first three production lots. © 2008 Microchip Technology Inc. DS22058C-page 3 MCP6V01/2/3 TABLE 1-1: DC ELECTRICAL SPECIFICATIONS (CONTINUED) Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 20 kΩ to VL, and CS = GND (refer to Figure 1-5 and Figure 1-6). Parameters Sym Min Typ Max Units Conditions VOL, VOH ISC VSS + 15 — VDD − 15 mV G = +2, 0.5V input overdrive — ±7 — mA VDD = 1.8V ISC — ±22 — mA VDD = 5.5V Output Maximum Output Voltage Swing Output Short Circuit Current Power Supply VDD 1.8 — 5.5 V IQ 200 300 400 µA VPOR 1.15 — 1.65 V Supply Voltage Quiescent Current per amplifier POR Trip Voltage Note 1: 2: IO = 0 Set by design and characterization. Due to thermal junction and other effects in the production environment, these parts can only be screened in production (except TC1; see Appendix B: “Offset Related Test Screens”). Figure 2-18 shows how VCMR changed across temperature for the first three production lots. TABLE 1-2: AC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 20 kΩ to VL, CL = 60 pF, and CS = GND (refer to Figure 1-5 and Figure 1-6). Parameters Sym Min Typ Max Units Conditions Amplifier AC Response Gain Bandwidth Product GBWP — 1.3 — MHz Slew Rate SR — 0.5 — V/µs Phase Margin PM — 65 — ° Eni — 0.79 — µVP-P f = 0.01 Hz to 1 Hz Eni — 2.5 — µVP-P f = 0.1 Hz to 10 Hz eni — 120 — nV/√Hz f < 2.5 kHz eni — 45 — nV/√Hz f = 100 kHz ini — 0.6 — fA/√Hz IMD — ')1@ 1RWH )RUWKHPRVWFXUUHQWSDFNDJHGUDZLQJVSOHDVHVHHWKH0LFURFKLS3DFNDJLQJ6SHFLILFDWLRQORFDWHGDW KWWSZZZPLFURFKLSFRPSDFNDJLQJ D e b N N L E E2 K EXPOSED PAD 1 2 2 1 NOTE 1 NOTE 1 D2 TOP VIEW BOTTOM VIEW A3 A A1 NOTE 2 8QLWV 'LPHQVLRQ/LPLWV 1XPEHURI3LQV 0,//,0(7(56 0,1 1 120 0$;  3LWFK H 2YHUDOO+HLJKW $    6WDQGRII $    &RQWDFW7KLFNQHVV $ 2YHUDOO/HQJWK ' ([SRVHG3DG:LGWK ( 2YHUDOO:LGWK ( ([SRVHG3DG/HQJWK %6& 5() %6&    %6& '    &RQWDFW:LGWK E    &RQWDFW/HQJWK /    &RQWDFWWR([SRVHG3DG .  ± ± 1RWHV  3LQYLVXDOLQGH[IHDWXUHPD\YDU\EXWPXVWEHORFDWHGZLWKLQWKHKDWFKHGDUHD  3DFNDJHPD\KDYHRQHRUPRUHH[SRVHGWLHEDUVDWHQGV  3DFNDJHLVVDZVLQJXODWHG  'LPHQVLRQLQJDQGWROHUDQFLQJSHU$60(7')1@ 1RWH )RUWKHPRVWFXUUHQWSDFNDJHGUDZLQJVSOHDVHVHHWKH0LFURFKLS3DFNDJLQJ6SHFLILFDWLRQORFDWHGDW KWWSZZZPLFURFKLSFRPSDFNDJLQJ © 2008 Microchip Technology Inc. DS22058C-page 37 MCP6V01/2/3 /HDG3ODVWLF'XDO)ODW1R/HDG3DFNDJH 01 ±[[PP%RG\>7')1@ 1RWH )RUWKHPRVWFXUUHQWSDFNDJHGUDZLQJVSOHDVHVHHWKH0LFURFKLS3DFNDJLQJ6SHFLILFDWLRQORFDWHGDW KWWSZZZPLFURFKLSFRPSDFNDJLQJ DS22058C-page 38 © 2008 Microchip Technology Inc. MCP6V01/2/3 APPENDIX A: REVISION HISTORY Revision C (December 2008) The following is the list of modifications: 1. 2. 3. 4. 5. 6. Added the 8-lead, 2x3 TDFN package for the MCP6V01 and MCP6V03 devices. Corrected the IMD specification in Table 1-2. Added 8-lead, 2x3 TDFN package information to Thermal Characteristic table. Added information on the Exposed Thermal Pad (EP) for the 8-lead, 2x3 TDFN and 8-lead, 4x4 DFN packages. Added Section 4.3.6 “Stabilizing Output Loads” Other minor typographical corrections. Revision B (June 2008) The following is the list of modifications: 1. 2. 3. 4. 5. 6. 7. 8. Updated the specifications and their conditions. Corrected the Timing Diagrams. Added to the Test Circuits. Added RISO (see Figure 4-6) to all circuit diagrams. Added the Typical Performance Curves. Corrected and expanded Applications Information. Minor edits due to change in production status. Added Appendix B, Offset Related Test Screens. Revision A (September 2007) • Original Release of this Document. © 2008 Microchip Technology Inc. DS22058C-page 41 MCP6V01/2/3 APPENDIX B: OFFSET RELATED TEST SCREENS We use production screens to ensure the quality of our outgoing products. These screens are set at wider limits to eliminate any fliers; see Table B-1. Input offset voltage related specifications in the DC spec table (Table 1-1) are based on bench measurements (see Section 2.1 “DC Input Precision”). These measurements are much more accurate because: • • • • More compact circuit Soldered parts on the PCB More time spent averaging (reduces noise) Better temperature control - Reduced temperature gradients - Greater accuracy TABLE B-1: OFFSET RELATED TEST SCREENS Electrical Characteristics: Unless otherwise indicated, TA = 25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 20 kΩ to VL, and CS = GND (refer to Figure 1-5 and Figure 1-6). Parameters Sym Min Max Units Conditions Input Offset Voltage VOS -10 +10 Input Offset Voltage Drift with Temperature (linear Temp. Co.) TC1 — — PSRR 115 — dB (Note 1) CMRR 106 — dB VDD = 1.8V, VCM = -0.2V to 2.0V (Note 1) CMRR 116 — dB VDD = 5.5V, VCM = -0.2V to 5.7V (Note 1) AOL 114 — dB VDD = 1.8V, VOUT = 0.2V to 1.6V (Note 1) AOL 122 — dB VDD = 5.5V, VOUT = 0.2V to 5.3V (Note 1) Input Offset Power Supply Rejection µV TA = +25°C (Note 1, Note 2) nV/°C TA = -40 to +125°C (Note 3) Common Mode Common Mode Rejection Open-Loop Gain DC Open-Loop Gain (large signal) Note 1: 2: 3: Due to thermal junctions and other errors in the production environment, these specifications are only screened in production. VOS is also sample screened at +125°C. TC1 is not measured in production. DS22058C-page 42 © 2008 Microchip Technology Inc. MCP6V01/2/3 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. –X /XXX Device Temperature Range Package Device: MCP6V01 Single Op Amp MCP6V01T Single Op Amp (Tape and Reel for 2x3 TDFN andSOIC) MCP6V02 Dual Op Amp MCP6V02T Dual Op Amp (Tape and Reel for 4×4 DFN and SOIC) MCP6V03 Single Op Amp with Chip Select MCP6V03T Single Op Amp with Chip Select (Tape and Reel for SOIC) Temperature Range: E Package: MD Examples: a) b) a) b) a) b) MCP6V01T-E/SN: Extended temperature, 8LD SOIC package. MCP6V01-E/MNY:Extended temperature, 8LD 2x3 TDFN package. MCP6V02-E/MD: Extended temperature, 8LD 4x4 DFN package. MCP6V02T-E/SN: Tape and Reel, Extended temperature, 8LD SOIC package. MCP6V03-E/SN: Extended temperature, 8LD SOIC package. MCP6V03-E/MNY:Extended temperature, 8LD 2x3 TDFN package. = -40°C to +125°C = Plastic Dual Flat, No-Lead (4×4x0.9 mm), 8-lead (MCP6V02 only) MNY * = Plastic Dual Flat No Lead (2x3x0.75 mm), 8-lead (MCP6V01, MCP6V03) SN = Plastic SOIC (150mil Body), 8-lead * Y = nickel palladium gold manufacturing designator. Only available on the TDFN package. © 2008 Microchip Technology Inc. DS22058C-page 43 MCP6V01/2/3 NOTES: DS22058C-page 44 © 2008 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, rfPIC, SmartShunt and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Linear Active Thermistor, MXDEV, MXLAB, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, mTouch, PICkit, PICDEM, PICDEM.net, PICtail, PIC32 logo, PowerCal, PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB, Select Mode, Total Endurance, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2008, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. © 2008 Microchip Technology Inc. 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MCP6V01T-E/MNY 价格&库存

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MCP6V01T-E/MNY
  •  国内价格 香港价格
  • 1+20.964081+2.71123
  • 25+17.4100425+2.25160

库存:1120

MCP6V01T-E/MNY
  •  国内价格 香港价格
  • 3300+15.679033300+2.02773

库存:1120

MCP6V01T-E/MNY
    •  国内价格
    • 1+13.30560
    • 200+5.15160
    • 500+4.96800
    • 1000+4.88160

    库存:0