MCP6V84T-E/ST

MCP6V81/1U/2/4 5 MHz, 0.5 mA, Zero-Drift Op Amps Features Description • High DC Precision: - VOS Drift: ±20 nV/°C (maximum, VDD = 5.5V) - VOS: ±9 µV (maximum) - AOL: 126 dB (minimum, VDD = 5.5V) - PSRR: 117 dB (minimum, VDD = 5.5V) - CMRR: 118 dB (minimum, VDD = 5.5V) - Eni: 0.28 µVP-P (typical), f = 0.1 Hz to 10 Hz - Eni: 0.1 µVP-P (typical), f = 0.01 Hz to 1 Hz • Enhanced EMI Protection: - Electromagnetic Interference Rejection Ratio (EMIRR) at 1.8 GHz: 101 dB • Low Power and Supply Voltages: - IQ: 0.5 mA/amplifier (typical) - Wide supply voltage range: 2.2V to 5.5V • Small Packages: - Singles in SC70, SOT-23 - Duals in MSOP-8, 2x3 TDFN - Quads in TSSOP-14 • Easy to Use: - Rail-to-rail input/output - Gain Bandwidth Product: 5 MHz (typical) - Unity Gain Stable • Extended Temperature Range: -40°C to +125°C The Microchip Technology Incorporated MCP6V81/1U/2/4 family of operational amplifiers provides input offset voltage correction for very low offset and offset drift. These devices have a gain bandwidth product of 5 MHz (typical). They are unity-gain stable, have virtually no 1/f noise and have good Power Supply Rejection Ratio (PSRR) and Common Mode Rejection Ratio (CMRR). These products operate with a single supply voltage as low as 2.2V, while drawing 500 µA/amplifier (typical) of quiescent current. The MCP6V81/1U/2/4 family has enhanced EMI protection to minimize any electromagnetic interference from external sources. This feature makes it well suited for EMI-sensitive applications such as power lines, radio stations and mobile communications, etc. The MCP6V81/1U/2/4 op amps are offered in single (MCP6V81 and MCP6V81U), dual (MCP6V82) and quad (MCP6V84) packages. They were designed using an advanced CMOS process. Typical Applications • • • • • Portable Instrumentation Sensor Conditioning Temperature Measurement DC Offset Correction Medical Instrumentation Design Aids • • • • • SPICE Macro Models FilterLab® Software Microchip Advanced Part Selector (MAPS) Analog Demonstration and Evaluation Boards Application Notes Related Parts • • • • • MCP6V11/1U/2/4: Zero-Drift, Low Power MCP6V31/1U/2/4: Zero-Drift, Low Power MCP6V61/1U/2/4: Zero-Drift, 1 MHz MCP6V71/1U/2/4: Zero-Drift, 2 MHz MCP6V91/1U/2/4: Zero-Drift, 10 MHz  2016 Microchip Technology Inc. Package Types MCP6V81 SOT-23 VOUT 1 VSS 2 VIN+ 3 MCP6V81U SC70, SOT-23 5 VDD VIN+ 1 5 VDD 4 VIN- VSS 2 VIN– 3 4 VOUT MCP6V82 MSOP VOUTA VINA– VINA+ VSS 1 2 3 4 8 7 6 5 MCP6V82 2×3 TDFN * VDD VOUTA VOUTB VINAVINB- VINA+ VSS VINB+ 8 VDD 1 2 3 4 EP 9 7 VOUTB 6 VINB5 VINB+ MCP6V84 TSSOP VOUTA VINAVINA+ VDD VINB+ VINBVOUTB 1 2 3 4 5 6 7 14 VOUTD 13 VIND12 VIND+ 11 VSS 10 VINC+ 9 VINC8 VOUTC * Includes Exposed Thermal Pad (EP); see Table 3-1. DS20005419B-page 1 MCP6V81/1U/2/4 Typical Application Circuit R1 R3 R2 R4 C2 + R2 VDD/2 + R5 U2 VOUT 8 U1 MCP6XXX VDD/2 MCP6V81 Offset Voltage Correction for Power Driver Input Offset Voltage (µV) VIN Figures 1 and 2 show the input offset voltage of the single-channel device MCP6V81/1U versus the ambient temperature for different power supply voltages. 6 27 Samples VDD = 2.2V 4 2 0 -2 -4 -6 -8 -50 -25 0 25 50 75 Ambient Temperature (°C) 100 125 FIGURE 1: Input Offset Voltage vs. Ambient Temperature with VDD = 2.2V. Input Offset Voltage (µV) 8 6 27 Samples VDD = 5.5V 4 2 0 -2 -4 -6 -8 -50 -25 0 25 50 75 Ambient Temperature (°C) 100 125 FIGURE 2: Input Offset Voltage vs. Ambient Temperature with VDD = 5.5V. As seen in Figures 1 and 2, the MCP6V81/1U op amps have excellent performance across temperature. The input offset voltage temperature drift (TC1) shown is well within the specified maximum values of 20 nV/°C at VDD = 5.5V and 25 nV/°C at VDD = 2.2V. This performance supports applications with stringent DC precision requirements. In many cases, it will not be necessary to correct for temperature effects (i.e., calibrate) in a design. In the other cases, the correction will be small. DS20005419B-page 2  2016 Microchip Technology Inc. MCP6V81/1U/2/4 1.0 ELECTRICAL CHARACTERISTICS 1.1 Absolute Maximum Ratings † VDD – VSS .................................................................................................................................................................6.5V Current at Input Pins ..............................................................................................................................................±2 mA Analog Inputs (VIN+ and VIN-)(1) ...............................................................................................VSS – 1.0V to VDD + 1.0V All Other Inputs and Outputs ....................................................................................................VSS – 0.3V to VDD + 0.3V Difference Input Voltage .................................................................................................................................|VDD – VSS| Output Short Circuit Current ........................................................................................................................... Continuous Current at Output and Supply Pins ...................................................................................................................... ±30 mA Storage Temperature .............................................................................................................................-65°C to +150°C Maximum Junction Temperature .......................................................................................................................... +150°C ESD protection on all pins (HBM, CDM, MM) MCP6V81/1U   4 kV, 1.5 kV, 400V MCP6V82/4  4 kV, 1.5 kV, 300V † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Note 1: See Section 4.2.1 “Rail-to-Rail Inputs”. 1.2 Specifications TABLE 1-1: DC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to +5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CL = 30 pF (refer to Figures 1-4 and 1-5). Parameters Sym. Min. Typ. Max. Units Conditions Input Offset Input Offset Voltage Input Offset Voltage Drift with Temperature (Linear Temperature Coefficient) Input Offset Voltage Quadratic Temperature Coefficient VOS TC1 TC2 -9 — +9 µV -25 — +25 nV/°C TA = -40 to +125°C, VDD = 2.2V (Note 1) -20 — +20 nV/°C TA = -40 to +125°C, VDD = 5.5V (Note 1) — ±30 — pV/°C2 TA = -40 to +125°C VDD = 2.2V — ±20 — pV/°C2 TA = -40 to +125°C VDD = 5.5V Input Offset Voltage Aging ∆VOS — ±0.25 — µV Power Supply Rejection Ratio PSRR 117 127 — dB Note 1: 2: TA = +25°C 408 hours Life Test at +150°, measured at +25°C. For design guidance only; not tested. Figure 2-19 shows how VCML and VCMH changed across temperature for the first production lot.  2016 Microchip Technology Inc. DS20005419B-page 3 MCP6V81/1U/2/4 TABLE 1-1: DC ELECTRICAL SPECIFICATIONS (CONTINUED) Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to +5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CL = 30 pF (refer to Figures 1-4 and 1-5). Parameters Sym. Min. Typ. Max. Units IB -50 ±2 +50 pA Conditions Input Bias Current and Impedance Input Bias Current Input Bias Current across Temperature IB — +10 — pA TA = +85°C IB 0 +0.24 +1 nA TA = +125°C Input Offset Current IOS -400 ±100 +400 pA Input Offset Current across Temperature IOS — ±75 — pA TA = +85°C IOS -500 ±100 +500 pA TA = +125°C ZCM — 1013||14 — Ω||pF ZDIFF — 13 10 ||3 — Ω||pF Common-mode Input Voltage Range Low VCML — — VSS–0.2 V Note 2 Common-mode Input Voltage Range High VCMH VDD+0. 3 — — V Note 2 Common-mode Rejection Ratio CMR R 112 128 — dB VDD = 2.2V, VCM = -0.2V to 2.5V (Note 2) CMR R 118 136 — dB VDD = 5.5V, VCM = -0.2V to 5.8V (Note 2) AOL 119 146 — dB VDD = 2.2V, VOUT = 0.3V to 2.0V AOL 126 151 — dB VDD = 5.5V, VOUT = 0.3V to 5.3V VOL VSS VSS+35 VSS+120 mV RL = 1 kΩ, G = +2, 0.5V input overdrive VOL — VSS+5 — mV RL = 10 kΩ, G = +2, 0.5V input overdrive VOH VDD– 120 VDD–45 VDD mV RL = 1 kΩ, G = +2, 0.5V input overdrive VOH — VDD–5 — mV RL = 10 kΩ, G = +2, 0.5V input overdrive ISC — ±15 — mA VDD = 2.2V ISC — ±40 — mA VDD = 5.5V VDD 2.2 — 5.5 V IQ 250 500 770 µA VPOR 1.2 1.6 1.9 V Common-mode Input Impedance Differential Input Impedance Common Mode Open-Loop Gain DC Open-Loop Gain (Large Signal) Output Minimum Output Voltage Swing Maximum Output Voltage Swing Output Short-Circuit Current Power Supply Supply Voltage Quiescent Current per Amplifier Power-on Reset (POR) Trip Voltage Note 1: 2: IO = 0 For design guidance only; not tested. Figure 2-19 shows how VCML and VCMH changed across temperature for the first production lot. DS20005419B-page 4  2016 Microchip Technology Inc. MCP6V81/1U/2/4 TABLE 1-2: AC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to +5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CL = 30 pF (refer to Figures 1-4 and 1-5). Parameters Sym. Min. Typ. Max. Units GBWP — 5 — MHz Conditions Amplifier AC Response Gain Bandwidth Product Slew Rate SR — 4 — V/µs Phase Margin PM — 60 — °C Eni — 0.1 — µVP-P f = 0.01 Hz to 1 Hz µVP-P f = 0.1 Hz to 10 Hz G = +1 Amplifier Noise Response Input Noise Voltage Eni — 0.28 — Input Noise Voltage Density eni — 13 — nV/√Hz f < 2 kHz Input Noise Current Density ini — 6 — fA/√Hz IMD — 100 — µVPK Start-Up Time tSTR — 100 — µs G = +1, 0.1% VOUT settling (Note 2) Offset Correction Settling Time tSTL — 30 — µs G = +1, VIN step of 2V, VOS within 100 µV of its final value Output Overdrive Recovery Time tODR — 60 — µs G = -10, ±0.5V input overdrive to VDD/2, VIN 50% point to VOUT 90% point (Note 3) EMIRR — 90 — dB VIN = 0.1 VPK, f = 400 MHz — 100 — VIN = 0.1 VPK, f = 900 MHz — 101 — VIN = 0.1 VPK, f = 1800 MHz — 105 — VIN = 0.1 VPK, f = 2400 MHz Amplifier Distortion(1) Intermodulation Distortion (AC) VCM tone = 100 mVPK at 1 kHz, GN = 11, RTI Amplifier Step Response EMI Protection EMI Rejection Ratio Note 1: 2: 3: These parameters were characterized using the circuit in Figure 1-6. In Figures 2-40 and 2-41, there is an IMD tone at DC, a residual tone at 1 kHz and other IMD tones and clock tones. IMD is Referred to Input (RTI). High gains behave differently; see Section 4.3.3 “Offset at Power-Up”. tSTL and tODR include some uncertainty due to clock edge timing. TABLE 1-3: TEMPERATURE SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, all limits are specified for: VDD = +2.2V to +5.5V, VSS = GND. Parameters Sym. Min. Typ. Max. Units Specified Temperature Range TA -40 — +125 °C Operating Temperature Range TA -40 — +125 °C Storage Temperature Range TA -65 — +150 °C Thermal Resistance, 5LD-SC70 JA — 209 — °C/W Thermal Resistance, 5LD-SOT-23 JA — 201 — °C/W Thermal Resistance, 8L-2x3 TDFN JA — 53 — °C/W Thermal Resistance, 8L-MSOP JA — 211 — °C/W Thermal Resistance, 14L-TSSOP JA — 100 — °C/W Conditions Temperature Ranges Note 1 Thermal Package Resistances Note 1: Operation must not cause TJ to exceed Maximum Junction Temperature specification (+150°C).  2016 Microchip Technology Inc. DS20005419B-page 5 MCP6V81/1U/2/4 1.3 Timing Diagrams 1.4 2.2V to 5.5V 2.2V VDD 0V tSTR 1.001(VDD/3) VOUT Test Circuits The circuits used for most DC and AC tests are shown in Figures 1-4 and 1-5. Lay the bypass capacitors out as discussed in Section 4.3.10 “Supply Bypassing and Filtering”. RN is equal to the parallel combination of RF and RG to minimize bias current effects. 0.999(VDD/3) FIGURE 1-1: Amplifier Start-Up. VDD VIN VIN VOS + 100 µV VOS – 100 µV FIGURE 1-2: Time. 100 nF RG RL VL RF FIGURE 1-4: AC and DC Test Circuit for Most Non-Inverting Gain Conditions. VDD VDD/3 RN MCP6V8X tODR VDD/2 VSS Output Overdrive Recovery. RISO 100 nF RG tODR 1 µF + VIN VDD FIGURE 1-3: CL VOUT Offset Correction Settling VIN VOUT - VDD/3 VOS RISO + MCP6V8X tSTL 1 µF RN CL VOUT RL VL RF FIGURE 1-5: AC and DC Test Circuit for Most Inverting Gain Conditions. The circuit in Figure 1-6 tests the input’s dynamic behavior (i.e., IMD, tSTR, tSTL and tODR). The potentiometer balances the resistor network (VOUT should equal VREF at DC). The op amp’s common-mode input voltage is VCM = VIN/2. The error at the input (VERR) appears at VOUT with a noise gain of 10 V/V. 11.0 kΩ 100 kΩ 500Ω 0.1% 25 turn 0.1% VREF = VDD/3 VDD 1 µF VIN 100 nF MCP6V8X 11.0 kΩ 100 kΩ 249Ω 1% 0.1% 0.1% FIGURE 1-6: Input Behavior. DS20005419B-page 6 RISO 0Ω VOUT RL open CL 30 pF VL Test Circuit for Dynamic  2016 Microchip Technology Inc. MCP6V81/1U/2/4 2.0 TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Note: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CL = 30 pF. 2.1 DC Input Precision 4 25% 28 Samples TA = 25ºC MCP6V81 3 Input Offset Voltage (µV) Percentage of Occurences 30% VDD = 5.5V 20% VDD = 2.2V 15% 10% 5% 2 1 0 -1 -2 -3 -5 -4 FIGURE 2-1: -3 -2 -1 0 1 2 3 Input Offset Voltage (µV) 4 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 5 Power Supply Voltage (V) Input Offset Voltage. FIGURE 2-4: Input Offset Voltage vs. Power Supply Voltage with VCM = VCML. 4 50% 45% 40% 28 Samples TA = -40°C to +125°C MCP6V81 VDD = 2.2V 35% VDD = 5.5V 30% 25% 20% 15% 10% 5% 3 Input Offset Voltage (µV) Percentage of Occurances TA = +125°C TA = +85°C TA = +25°C TA = -40°C -4 0% 2 0 -1 -2 TA = +25°C TA = +85°C TA = +125°C -3 2 4 6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 8 10 12 Power Supply Voltage (V) Input Offset Voltage Drift; TC1 (nV/°C) Input Offset Voltage Drift. 8 28 Samples TA = -40°C to +125°C MCP6V81 30% VDD = 5.5V 25% 20% VDD = 2.2V 15% 10% 5% 0% -100 -80 -60 -40 -20 0 20 40 60 80 100 Input Offset Voltage's Quadratric Temp Co; TC2 (pV/°C2) FIGURE 2-3: Input Offset Voltage Quadratic Temperature Coefficient.  2016 Microchip Technology Inc. FIGURE 2-5: Input Offset Voltage vs. Power Supply Voltage with VCM = VCMH. Input Offset Voltage (µV) FIGURE 2-2: 35% TA = -40°C -4 -12 -10 -8 -6 -4 -2 0 40% Representative Part VCM = VCMH 1 0% Percentage of Occurrences Representative Part VCM = VCML 6 Representative Part VDD = 2.2V 4 2 0 -2 -4 TA = +125°C TA = +85°C TA = +25°C TA = -40°C -6 -8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Output Voltage (V) FIGURE 2-6: Input Offset Voltage vs. Output Voltage with VDD = 2.2V. DS20005419B-page 7 MCP6V81/1U/2/4 Note: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CL = 30 pF. Percentage of Occurrences Input Offset Voltage (µV) 8 Representative Part VDD = 5.5V 6 4 2 0 -2 TA = +125°C TA = +85°C TA = +25°C TA = -40°C -4 -6 60% 50% Tester Data 3355 Samples TA = +25ºC VDD = 5.5V 40% 30% 20% VDD = 2.2V 10% 0% -1.6 -1.2 -0.8 -0.4 -8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Output Voltage (V) FIGURE 2-7: Input Offset Voltage vs. Output Voltage with VDD = 5.5V. FIGURE 2-10: Ratio. VDD = 2.2V Representative Part Percentage of Occurrences Input Offset Voltage (µV) 8 6 4 2 0 TA = +125°C TA = +85°C TA = +25°C TA = -40°C -2 -4 -6 50% Tester Data 3365 Samples TA = +25ºC 40% 30% 20% 10% -1 -0.8 -0.6 -0.4 -0.2 Percentage of Occurrences Input Offset Voltage (µV) 1.6 60% FIGURE 2-11: Ratio. VDD = 5.5V Representative Part 4 2 0 TA = +125°C TA = +85°C TA = +25°C TA = -40°C -4 1.2 0 0.2 0.4 0.6 0.8 1 1/PSRR (µV/V) FIGURE 2-8: Input Offset Voltage vs. Common-Mode Voltage with VDD = 2.2V. -2 0.8 Common-Mode Rejection Common-Mode Input Voltage (V) 6 0.4 0% -8 -0.5 -0.2 0.1 0.4 0.7 1.0 1.3 1.6 1.9 2.2 2.5 8 0 1/CMRR (µV/V) -6 Power Supply Rejection 80% 70% 60% Tester Data 3355 Samples TA = +25ºC VDD = 5.5V 50% 40% 30% VDD = 2.2V 20% 10% 0% 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -0.5 -8 -0.5 -0.4 -0.3 -0.2 -0.1 FIGURE 2-9: Input Offset Voltage vs. Common-Mode Voltage with VDD = 5.5V. DS20005419B-page 8 0 0.1 0.2 0.3 0.4 0.5 1/AOL (µV/V) Common-Mode Input Voltage (V) FIGURE 2-12: DC Open-Loop Gain.  2016 Microchip Technology Inc. MCP6V81/1U/2/4 Note: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CL = 30 pF. VDD = 5.5V 130 120 0 25 50 75 100 125 0.01 0.01p FIGURE 2-17: Input Bias and Offset Currents vs. Ambient Temperature with VDD = 5.5V. 1m Input Current Magnitude (A) VDD = 5.5 V TA = +85ºC Input Bias Current 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 Input Offset Current -0.5 6.0 Ambient Temperature (°C) FIGURE 2-14: DC Open-Loop Gain vs. Ambient Temperature. Input Bias and Offset Currents (pA) 5.5 0.1 0.1p Ambient Temperature (°C) 500 400 300 200 100 0 -100 -200 -300 -400 -500 5.0 Input Bias Current 1 1p 125 150 Input Offset Current 10 10p 115 160 VDD = 5.5 V 100 100p 105 VDD = 2.2V 95 170 1000 1n 25 180 -25 4.5 FIGURE 2-16: Input Bias and Offset Currents vs. Common-Mode Input Voltage with TA = +125°C. Input Bias, Offset Currents (A) DC Open-Loop Gain (dB) FIGURE 2-13: CMRR and PSRR vs. Ambient Temperature. -50 4.0 Input Common-Mode Voltage (V) Ambient Temperature (°C) 140 3.5 125 3.0 100 85 75 2.5 50 75 25 65 0 55 -25 45 -50 2.0 110 1.5 PSRR Input Offset Current 1.0 120 Input Bias Current 0.5 130 VDD = 5.5 V TA = +125ºC 35 140 500 400 300 200 100 0 -100 -200 -300 -400 -500 0.0 CMRR at VDD = 5.5V at VDD = 2.2V -0.5 Input Bias and Offset Currents (pA) CMRR, PSRR (dB) 150 Input Common-Mode Voltage (V) FIGURE 2-15: Input Bias and Offset Currents vs. Common-Mode Input Voltage with TA = +85°C.  2016 Microchip Technology Inc. 100µ 10µ 1µ 100n 10n 1n TA = +125°C TA = +85°C TA = +25°C TA = -40°C 100p -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0 Input Voltage (V) FIGURE 2-18: Input Bias Current vs. Input Voltage (Below VSS). DS20005419B-page 9 MCP6V81/1U/2/4 Note: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CL = 30 pF. Other DC Voltages and Currents 0.6 0.5 0.4 0.3 0.2 0.1 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 1 Wafer Lot Upper (VCMH - VDD) Lower (VCML - VSS) -50 -25 0 25 50 75 100 60 50 40 30 20 10 0 -10 -20 -30 -40 -50 -60 Output Short-Circuit Current (mA) Input Common-Mode Voltage Headroom (V) 2.2 TA = +125°C TA = +85°C TA = +25°C TA = -40°C TA = +125°C TA = +85°C TA = +25°C TA = -40°C 125 0.5 1 FIGURE 2-19: Input Common-Mode Voltage Headroom (Range) vs. Ambient Temperature. 2.5 3 3.5 4 4.5 5 5.5 6 FIGURE 2-22: Output Short-Circuit Current vs. Power Supply Voltage. 700 1000 600 VDD = 2.2V Quiescent Current (µA/Amplifier) VDD - VOH 100 VDD = 5.5V 10 VOL - VSS 500 400 300 TA = +125°C TA = +85°C TA = +25°C TA = -40°C 200 100 1 0 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 Output Current Magnitude (mA) Power Supply Voltage (V) 100% 90% 80% 70% 60% 50% 40% 30% 20% 10% 0% VOL - VSS 10 VDD = 2.2V 0 -50 -25 0 25 50 75 100 125 Ambient Temperature (°C) FIGURE 2-21: Output Voltage Headroom vs. Ambient Temperature. DS20005419B-page 10 1.7 20 1.65 30 1.6 40 1.5 VDD - VOH 1 Wafer Lot TA = +25ºC 1.4 60 VDD = 5.5V 430 Samples 1.35 70 1.85 RL = 1 kȍ 50 Supply Current vs. Power Percentage of Occurrences 80 FIGURE 2-23: Supply Voltage. 1.8 FIGURE 2-20: Output Voltage Headroom vs. Output Current. 1.75 1 1.55 0.1 1.45 Output Voltage Headroom (mV) 2 Power Supply Voltage (V) Ambient Temperature (°C) Output Voltage Headroom (mV) 1.5 POR Trip Voltage (V) FIGURE 2-24: Voltage. Power-on Reset Trip  2016 Microchip Technology Inc. MCP6V81/1U/2/4 POR Trip Voltage (V) Note: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CL = 30 pF. 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 -50 -25 0 25 50 75 100 125 Ambient Temperature (°C) FIGURE 2-25: Power-on Reset Voltage vs. Ambient Temperature.  2016 Microchip Technology Inc. DS20005419B-page 11 MCP6V81/1U/2/4 Note: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CL = 30 pF. Frequency Response 140 CMRR 80 PSRR- 60 PSRR+ 20 0 100 1k 10k 100k 1M 7.0 60 5.0 50 4.0 40 GBWP 3.0 2.0 20 1.0 10 -50 10M -25 -90 30 -120 20 -150 Open-Loop Gain -180 0 -210 VDD = 2.2V CL = 30 pF Open-Loop Phase (°) -240 -270 1.E+05 100k 1.E+06 1M f (Hz) -120 20 -150 Open-Loop Gain -180 0 -210 VDD = 5.5V CL = 30 pF -240 -270 1.E+06 1M f (Hz) 1.E+07 10M FIGURE 2-28: Open-Loop Gain vs. Frequency with VDD = 5.5V. DS20005419B-page 12 Open-Loop Phase (°) Open-Loop Gain (dB) -90 30 1.E+05 100k 4 70 3 60 2 50 VDD = 5.5V VDD = 2.2V PM 1 40 0 30 0 1 2 3 4 5 6 7 -60 Open-Loop Phase -20 1.E+04 10k 80 FIGURE 2-30: Gain Bandwidth Product and Phase Margin vs. Common-Mode Input Voltage. -30 50 -10 5 Common-Mode Input Voltage (V) 60 10 100 125 90 -1 FIGURE 2-27: Open-Loop Gain vs. Frequency with VDD = 2.2V. 40 75 GBWP 1.E+07 10M Gain Bandwidth Product (MHz) Open-Loop Gain (dB) -60 Open-Loop Phase -20 1.E+04 10k 50 6 -30 50 -10 25 FIGURE 2-29: Gain Bandwidth Product and Phase Margin vs. Ambient Temperature. Gain Bandwidth Product (MHz) 60 10 0 Ambient Temperature (°C) CMRR and PSRR vs. 40 30 VDD = 2.2V Frequency (Hz) FIGURE 2-26: Frequency. 70 PM 6.0 Phase Margin (°) 100 80 VDD = 5.5V Phase Margin (º) CMRR, PSRR (dB) 120 40 8.0 Gain Bandwidth Product (MHz) Representative Part 80 6 70 GBWP PM 5 60 4 50 VDD = 5.5V VDD = 2.2V 3 40 2 Phase Margin (º) 2.3 30 1 20 0 1 2 3 4 5 6 Output Voltage (V) FIGURE 2-31: Gain Bandwidth Product and Phase Margin vs. Output Voltage.  2016 Microchip Technology Inc. MCP6V81/1U/2/4 Note: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CL = 30 pF. 1000 Closed-Loop Output Impedance (Ω) VDD = 2.2V 10 G N: 101 V/V 11 V/V 1 V/V 1 EMIRR (dB) 100 0.1 1.0E+03 1k 1.0E+04 10k 1.0E+06 1.0E+05 100k 1.0E+07 1M 10M 120 110 100 90 80 70 60 50 40 30 20 10 10 10M VPK = 100 mV VDD = 5.5V 100 100M 1000 1G 10000 10G Frequency (Hz) Frequency (Hz) FIGURE 2-32: Closed-Loop Output Impedance vs. Frequency with VDD = 2.2V. FIGURE 2-35: EMIRR vs. Frequency. 120 1000 VDD = 5.5V VDD = 5.5V 100 EMIRR (dB) Closed-Loop Output Impedance (Ω) 100 G N: 101 V/V 11 V/V 1 V/V 10 80 60 40 EMIRR at 2400 MHz EMIRR at 1800 MHz EMIRR at 900 MHz EMIRR at 400 MHz 1 20 0.1 1.0E+03 1k 1.0E+04 10k 1.0E+06 1.0E+05 100k 0 0.01 1.0E+07 1M 10M Frequency (Hz) Output Voltage Swing (VP-P) 10 VDD = 5.5V VDD = 2.2V 1 0.1 1000 1k 10000 10k FIGURE 2-36: Channel-to-Channel Separation RTI (dB) FIGURE 2-33: Closed-Loop Output Impedance vs. Frequency with VDD = 5.5V. 100000 1000000 100k 1M Frequency (Hz) 10000000 10M FIGURE 2-34: Maximum Output Voltage Swing vs. Frequency.  2016 Microchip Technology Inc. 0.1 1 RF Input Peak Voltage (Vp) 10 EMIRR vs. Input Voltage. 150 140 130 VDD = 5.5V 120 110 VDD = 2.2V 100 90 80 1k 1.E+03 10k 100k 1.E+04 1.E+05 Frequency (Hz) 1M 1.E+06 FIGURE 2-37: Channel-to-Channel Separation vs. Frequency. DS20005419B-page 13 MCP6V81/1U/2/4 Note: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CL = 30 pF. Input Noise and Distortion 1000 VDD = 5.5V, red VDD = 2.2V, blue 100 100 eni 10 10 Eni (0 Hz to f) 1 1 1 10 100 1.E+3 1k 10k 1.E+5 100k 1.E+0 1.E+1 1.E+2 1.E+4 Frequency (Hz) FIGURE 2-38: Input Noise Voltage Density and Integrated Input Noise Voltage vs. Frequency. 1.E+3 1m IMD Spectrum, RTI (VPK) Input Noise Voltage Density; eni (nV/¥Hz) 1000 Integrated Input Noise Voltage; Eni (µVP-P) 2.4 G = 11 V/V VDD tone = 100 mVPK, f = 1 kHz VDD = 2.2V VDD = 5.5V 1.E+2 100μ Residual 1 kHz tone 1.E+1 10μ DC tone 1.E+0 1μ ǻf = 2 Hz 1.E-1 100n 1.E-2 10n 1 1.E+0 ǻf = 64 Hz 10 1.E+1 100 1k 1.E+2 1.E+3 Frequency (Hz) 10k 1.E+4 100k 1.E+5 FIGURE 2-41: Intermodulation Distortion vs. Frequency with VDD Disturbance (see Figure 1-6). 30 20 V DD = 2.2V 15 V DD = 5.5V 10 5 VDD = 2.2V Input Noise Voltage; eni(t) (0.1 µV/div) Input Noise Voltage Density (nV/ √Hz) f < 2 kHz 25 NPBW = 10 Hz NPBW = 1 Hz 0 -0.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0 10 20 30 40 Common-Mode Input Voltage (V) IMD Spectrum, RTI (VPK) G = 11 V/V VCM tone = 100 mVPK, f = 1 kHz VDD = 2.2V VDD = 5.5V 1.E+2 100μ 1.E+1 10μ DC tone Residual 1 kHz tone (due to resistor mismatch) 1.E+0 1μ 100n 1.E-1 70 80 90 100 VDD = 5.5V NPBW = 10 Hz NPBW = 1 Hz ǻf = 64 Hz ǻf = 2 Hz 0 1.E-2 10n 1 60 FIGURE 2-42: Input Noise vs. Time with 1 Hz and 10 Hz Filters and VDD = 2.2V. Input Noise Voltage; eni(t) (0.1 µV/div) FIGURE 2-39: Input Noise Voltage Density vs. Input Common-Mode Voltage. 1.E+3 1m 50 Time (s) 10 100 1k 100 1000 Frequency (Hz) 10k 10000 100k 100000 FIGURE 2-40: Intermodulation Distortion vs. Frequency with VCM Disturbance (see Figure 1-6). DS20005419B-page 14 10 20 30 40 50 60 70 80 90 100 Time (s) FIGURE 2-43: Input Noise vs. Time with 1 Hz and 10 Hz Filters and VDD = 5.5V.  2016 Microchip Technology Inc. MCP6V81/1U/2/4 Note: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CL = 30 pF. 45 40 35 30 25 20 15 10 5 0 -5 -10 100 80 60 40 20 0 -20 -40 -60 -80 -100 -120 TPCB VDD = 5.5V VDD = 2.2V VOS Temperature is increased using a heat gun for 5 seconds Output Voltage (20mV/div) Time Response PCB Temperature (ºC) Input Offset Voltage (µV) 2.5 VIN VOUT VDD = 5.5V G = +1 V/V 0 0 10 20 30 40 50 60 70 80 90 100110120 0.5 1 1.5 2 Time (s) FIGURE 2-47: Step Response. FIGURE 2-44: Input Offset Voltage vs. Time with Temperature Change. 6 5 VDD 20 4 VDD = 5.5V G = +1 V/V 15 3 10 2 POR Trip Point 5 1 VOS 0 0 -5 1 2 3 4 5 6 7 8 9 5 VDD = 5.5 V G = +1 V/V VOUT 4 VIN 3 2 1 -1 0 4.5 Non-Inverting Small Signal 5 Output Voltage (V) 25 4 6 Power Supply Voltage (V) Input Offset Voltage (mV) 30 2.5 3 3.5 Time (µs) 0 10 0 5 10 Time (ms) 15 20 Time (µs) FIGURE 2-45: Input Offset Voltage vs. Time at Power-Up. FIGURE 2-48: Step Response. Non-Inverting Large Signal 5 4 VOUT VIN 3 2 1 VDD = 5.5 V G = +1 V/V 0 -1 Time (2 µs/div) FIGURE 2-46: The MCP6V81/1U/2/4 Family Shows No Input Phase Reversal with Overdrive.  2016 Microchip Technology Inc. Output Voltage (20 mV/div) Input, Output Voltages (V) 6 VOUT VDD = 5.5 V G = -1 V/V VIN 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Time (µs) FIGURE 2-49: Response. Inverting Small Signal Step DS20005419B-page 15 MCP6V81/1U/2/4 Note: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CL = 30 pF. 1m Overdrive Recovery Time (s) 6 Output Voltage (V) 5 VOUT VDD = 5.5 V G = -1 V/V 4 3 2 1 VIN 0 0 5 10 15 20 Time (µs) FIGURE 2-50: Response. 0.5V Input Overdrive VDD = 2.2V tODR, low 100µ VDD = 5.5V 10µ tODR, high 1µ 1 10 100 1000 Inverting Gain Magnitude (V/V) Inverting Large Signal Step FIGURE 2-53: Output Overdrive Recovery Time vs. Inverting Gain. 7.0 Falling Edge, VDD = 2.2V Slew Rate (V/µs) 6.0 Falling Edge, VDD = 5.5V Rising Edge, VDD = 5.5V 5.0 4.0 Rising Edge, VDD = 2.2V 3.0 2.0 1.0 -50 -25 0 25 50 75 100 125 Ambient Temperature (°C) FIGURE 2-51: Temperature. Slew Rate vs. Ambient 7 VDD = 5.5 V G = -10 V/V 0.5V Overdrive Output Voltage (V) 6 5 4 VOUT GVIN GVIN VOUT 3 2 1 0 -1 Time (50 µs/div) FIGURE 2-52: Output Overdrive Recovery vs. Time with G = -10 V/V. DS20005419B-page 16  2016 Microchip Technology Inc. MCP6V81/1U/2/4 3.0 PIN DESCRIPTIONS Descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE MCP6V81 MCP6V81U MCP6V82 MCP6V84 Symbol Description SOT-23 SOT-23, SC70 2X3 TDFN MSOP TSSOP 1 4 1 1 1 4 3 2 2 3 1 3 3 5 5 8 8 4 VDD — — 5 5 5 VINB+ Non-inverting Input (Op Amp B) 3.1 2 VIN- Inverting Input 3 VIN+ Non-Inverting Input Positive Power Supply — — 6 6 6 VINB- Inverting Input (Op Amp B) — 7 7 7 VOUTB Output (Op Amp B) — — — — 8 VOUTC Output (Op Amp C) — — — — 9 VINC- Inverting Input (Op Amp C) — — — — 10 VINC+ 2 2 4 4 11 VSS — — — — 12 VIND+ Non-inverting Input (Op Amp D) — — — — 13 VIND- Inverting Input (Op Amp D) — — — — 14 VOUTD — — 9 — — EP Analog Outputs (VOUT, VOUTA, VOUTB, VOUTC, VOUTD) Analog Inputs (VIN-, VIN+, VINB+, VINB-, VINC-, VINC+, VIND+, VIND-) The non-inverting and inverting inputs are high-impedance CMOS inputs with low bias currents. 3.3 Output — The analog output pins are low-impedance voltage sources. 3.2 VOUT 3.4 Non-inverting Input (Op Amp C) Negative Power Supply Output (Op Amp D) Exposed Thermal Pad (EP); must be connected to VSS Exposed Thermal Pad (EP) There is an internal connection between the exposed thermal pad (EP) and the VSS pin; they must be connected to the same potential on the printed circuit board (PCB). This pad can be connected to a PCB ground plane to provide a larger heat sink. This improves the package thermal resistance (θJA). Power Supply Pins (VDD, VSS) The positive power supply (VDD) is 2.2V to 5.5V higher than the negative power supply (VSS). For normal operation, the other pins are between VSS and VDD. Typically, these parts are used in a single (positive) supply configuration. In this case, VSS is connected to ground and VDD is connected to the supply. VDD will need bypass capacitors.  2016 Microchip Technology Inc. DS20005419B-page 17 MCP6V81/1U/2/4 NOTES: DS20005419B-page 18  2016 Microchip Technology Inc. MCP6V81/1U/2/4 4.0 APPLICATIONS The MCP6V81/1U/2/4 family of zero-drift op amps is manufactured using Microchip’s state-of-the-art CMOS process. It is designed for precision applications with requirements for small packages and low power. Its low supply voltage and low quiescent current make the MCP6V81/1U/2/4 devices ideal for battery-powered applications. 4.1 Overview of Zero-Drift Operation Figure 4-1 shows a simplified diagram of the MCP6V81/1U/2/4 zero-drift op amp. This diagram will be used to explain how slow voltage errors are reduced in this architecture (much better VOS, VOS/TA (TC1), CMRR, PSRR, AOL and 1/f noise). VREF Output Buffer VOUT The low-pass filter reduces high-frequency content, including harmonics of the chopping clock. The output buffer drives external loads at the VOUT pin (VREF is an internal reference voltage). The oscillator runs at fOSC1 = 200 kHz. Its output is divided by two, to produce the chopping clock rate of fCHOP = 100 kHz. The internal Power-on Reset (POR) starts the part in a known good state, protecting against power supply brown-outs. The digital control block controls switching and POR events. 4.1.2 Figure 4-2 shows the amplifier connections for the first phase of the chopping clock and Figure 4-3 shows the connections for the second phase. Its slow voltage errors alternate in polarity, making the average error small. VIN+ + VIN+ + - VIN– + - + - Main Amp. CHOPPING ACTION VIN– NC + + - + - Main Amp. Low-Pass Filter Low-Pass Filter Chopper Input Switches + Aux. - Amp. + - NC + Aux. - Amp. Chopper Output Switches + - FIGURE 4-2: First Chopping Clock Phase; Equivalent Amplifier Diagram. Oscillator Digital Control POR FIGURE 4-1: Simplified Zero-Drift Op Amp Functional Diagram. 4.1.1 BUILDING BLOCKS The main amplifier is designed for high gain and bandwidth, with a differential topology. Its main input pair (+ and - pins at the top left) is used for the higher frequency portion of the input signal. Its auxiliary input pair (+ and - pins at the bottom left) is used for the low-frequency portion of the input signal and corrects the op amp’s input offset voltage. Both inputs are added together internally. The auxiliary amplifier, chopper input switches and chopper output switches provide a high DC gain to the input signal. DC errors are modulated to higher frequencies, while white noise is modulated to a low frequency.  2016 Microchip Technology Inc. VIN+ VIN– + + - + - Main Amp. NC Low-Pass Filter + Aux. - Amp. + - FIGURE 4-3: Second Chopping Clock Phase; Equivalent Amplifier Diagram. DS20005419B-page 19 MCP6V81/1U/2/4 4.1.3 INTERMODULATION DISTORTION (IMD) These op amps will show intermodulation distortion (IMD) products when an AC signal is present. The signal and clock can be decomposed into sine wave tones (Fourier series components). These tones interact with the zero-drift circuitry’s nonlinear response to produce IMD tones at sum and difference frequencies. Each of the square wave clock’s harmonics has a series of IMD tones centered on it (see Figures 2-40 and 2-41). 4.2 4.2.1 Other Functional Blocks RAIL-TO-RAIL INPUTS The input stage of the MCP6V81/1U/2/4 op amps uses two differential CMOS input stages in parallel. One operates at low common-mode input voltage (VCM, which is approximately equal to VIN+ and VIN- in normal operation), and the other operates at high VCM. With this topology, the input operates with VCM up to VDD + 0.3V and down to VSS – 0.2V, at +25°C (see Figure 2-19). The input offset voltage (VOS) is measured at VCM = VSS – 0.2V and VDD + 0.3V to ensure proper operation. 4.2.1.1 Phase Reversal The input devices are designed to not exhibit phase inversion when the input pins exceed the supply voltages. Figure 2-46 shows an input voltage exceeding both supplies with no phase inversion. 4.2.1.2 VDD Bond Pad VIN+ Bond Pad VSS Bond Pad FIGURE 4-4: Structures. The ESD protection on the inputs can be depicted as shown in Figure 4-4. This structure was chosen to protect the input transistors against many (but not all) overvoltage conditions and to minimize input bias current (IB). DS20005419B-page 20 Simplified Analog Input ESD The input ESD diodes clamp the inputs when they try to go more than one diode drop below VSS. They also clamp any voltages well above VDD; their breakdown voltage is high enough to allow normal operation but not low enough to protect against slow overvoltage (beyond VDD) events. Very fast ESD events (that meet the specification) are limited so that damage does not occur. In some applications, it may be necessary to prevent excessive voltages from reaching the op amp inputs; Figure 4-5 shows one approach to protecting these inputs. D1 and D2 may be small signal silicon diodes, Schottky diodes for lower clamping voltages or diode-connected FETs for low leakage. VDD Input Voltage Limits In order to prevent damage and/or improper operation of these amplifiers, the circuit must limit the voltages at the input pins (see Section 1.1 “Absolute Maximum Ratings †”). This requirement is independent of the input current limits discussed later on. Bond V IN Pad Input Stage U1 D1 MCP6V8X V1 + D2 V2 - VOUT FIGURE 4-5: Protecting the Analog Inputs Against High Voltages.  2016 Microchip Technology Inc. MCP6V81/1U/2/4 4.2.1.3 Input Current Limits 4.3 In order to prevent damage and/or improper operation of these amplifiers, the circuit must limit the currents into the input pins (see Section 1.1 “Absolute Maximum Ratings †”). This requirement is independent of the voltage limits discussed previously. Figure 4-6 shows one approach to protecting these inputs. The R1 and R2 resistors limit the possible current in or out of the input pins (and into D1 and D2). The diode currents will dump onto VDD. V1 V2 R1 MCP6V8X D2 Table 1-1 gives both the linear and quadratic temperature coefficients (TC1 and TC2) of input offset voltage. The input offset voltage, at any temperature in the specified range, can be calculated as follows: EQUATION 4-1: 2 T = TA – 25°C VOS(TA) = Input offset voltage at TA VOS = Input offset voltage at +25°C TC1 = Linear temperature coefficient TC2 = Quadratic temperature coefficient VOUT - R2 VSS – min(V1, V2) 2 mA max(V1, V2) – VDD min(R1, R2) > 2 mA min(R1, R2) > FIGURE 4-6: Protecting the Analog Inputs Against High Currents. It is also possible to connect the diodes to the left of the R1 and R2 resistors. In this case, the currents through the D1 and D2 diodes need to be limited by some other mechanism. The resistors then serve as in-rush current limiters; the DC current into the input pins (VIN+ and VIN-) should be very small. A significant amount of current can flow out of the inputs (through the ESD diodes) when the commonmode input voltage (VCM) is below ground (VSS) (see Figure 2-18). 4.2.2 INPUT OFFSET VOLTAGE OVER TEMPERATURE Where: U1 + 4.3.1 V OS  T A  = VOS + TC 1  T + TC2  T VDD D1 Application Tips RAIL-TO-RAIL OUTPUT The output voltage range of the MCP6V81/1U/2/4 zero-drift op amps is VDD – 5 mV (typical) and VSS + 5 mV (typical) when RL = 10 kΩ is connected to VDD/2 and VDD = 5.5V. Refer to Figures 2-20 and 2-21 for more information. This op amp is designed to drive light loads; use another amplifier to buffer the output from heavy loads. 4.3.2 DC GAIN PLOTS Figures 2-10 to 2-12 are histograms of the reciprocals (in units of µV/V) of CMRR, PSRR and AOL, respectively. They represent the change in input offset voltage (VOS) with a change in common-mode input voltage (VCM), power supply voltage (VDD) and output voltage (VOUT). The histograms are based on data taken with the production test equipment and the results reflect the trade-off between accuracy and test time. The actual performance of the devices is typically higher than shown in Figures 2-10 to 2-12. The 1/AOL histogram is centered near 0 µV/V because the measurements are dominated by the op amp’s input noise. The negative values shown represent noise and tester limitations, not unstable behavior. Production tests make multiple VOS measurements, which validates an op amp's stability; an unstable part would show greater VOS variability or the output would stick at one of the supply rails. 4.3.3 OFFSET AT POWER-UP When these parts power up, the input offset (VOS) starts at its uncorrected value (usually less than ±5 mV). Circuits with high DC gain can cause the output to reach one of the two rails. In this case, the time to a valid output is delayed by an output overdrive time (like tODR) in addition to the start-up time (like tSTR). It can be simple to avoid this extra start-up time. Reducing the gain is one method. Adding a capacitor across the feedback resistor (RF) is another method.  2016 Microchip Technology Inc. DS20005419B-page 21 MCP6V81/1U/2/4 SOURCE RESISTANCES The input bias currents have two significant components: switching glitches that dominate at room temperature and below, and input ESD diode leakage currents that dominate at +85°C and above. Make the resistances seen by the inputs small and equal. This minimizes the output offset caused by the input bias currents. The inputs should see a resistance on the order of 10Ω to 1 kΩ at high frequencies (i.e., above 1 MHz). This helps minimize the impact of switching glitches, which are very fast, on overall performance. In some cases, it may be necessary to add resistors in series with the inputs to achieve this improvement in performance. Small input resistances may be needed for high gains. Without them, parasitic capacitances might cause positive feedback and instability. 4.3.5 SOURCE CAPACITANCE The capacitances seen by the two inputs should be small. Large input capacitances and source resistances, together with high gain, can lead to positive feedback and instability. 4.3.6 CAPACITIVE LOADS Driving large capacitive loads can cause stability problems for voltage feedback op amps. As the load capacitance increases, the feedback loop’s phase margin decreases and the closed-loop bandwidth is reduced. This produces gain peaking in the frequency response, with overshoot and ringing in the step response. These zero-drift op amps have a different output impedance than most op amps, due to their unique topology. When driving a capacitive load with these op amps, a series resistor at the output (RISO in Figure 4-7) improves the feedback loop’s phase margin (stability) by making the output load resistive at higher frequencies. The bandwidth will be generally lower than the bandwidth with no capacitive load. GN is the circuit’s noise gain. For non-inverting gains, GN and the Signal Gain are equal. For inverting gains, GN is 1+|Signal Gain| (e.g., -1 V/V gives GN = +2 V/V). 10000 Recommended R ISO (Ω) 4.3.4 VDD = 5.5 V RL = 10 kȍ 1000 100 GN: 1 V/V 10 V/V 100 V/V 10 1 1p 1n 10n 100n 1µ After selecting RISO for your circuit, double check the resulting frequency response peaking and step response overshoot. Modify the RISO value until the response is reasonable. Bench evaluation is helpful. 4.3.7 STABILIZING OUTPUT LOADS This family of zero-drift op amps has an output impedance that has a double zero when the gain is low (see Figures 2-32 and 2-33). This can cause a large phase shift in feedback networks that have lowimpedance near the part’s bandwidth. This large phase shift can cause stability problems. Figure 4-9 shows that the load on the output is (RL + RISO)||(RF + RG), where RISO is before the load (like Figure 4-7). This load needs to be large enough to maintain stability; it should be at least 10 kΩ. RG RF RISO VOUT - RL CL + U1 VOUT + 100p FIGURE 4-8: Recommended RISO values for Capacitive Loads. RISO - 10p Normalized Load Capacitance; CL/√ √GN (F) CL MCP6V81 FIGURE 4-9: Output Load. U1 MCP6V81 FIGURE 4-7: Output Resistor, RISO, Stabilizes Capacitive Loads. Figure 4-8 gives recommended RISO values for different capacitive loads and gains. The x-axis is the load capacitance (CL). The y-axis is the resistance (RISO). DS20005419B-page 22  2016 Microchip Technology Inc. MCP6V81/1U/2/4 4.3.8 GAIN PEAKING 4.3.9 Figure 4-10 shows an op amp circuit that represents non-inverting amplifiers (VM is a DC voltage and VP is the input) or inverting amplifiers (VP is a DC voltage and VM is the input). The CN and CG capacitances represent the total capacitance at the input pins; they include the op amp’s common-mode input capacitance (CCM), board parasitic capacitance and any capacitor placed in parallel. The CFP capacitance represents the parasitic capacitance coupling the output and non-inverting input pins. RN VP CN CFP U1 + MCP6V8X - VM RG FIGURE 4-10: Capacitance. CG Reduce undesired noise and signals with: • Low-bandwidth signal filters: - Minimize random analog noise - Reduce interfering signals • Good PCB layout techniques: - Minimize crosstalk - Minimize parasitic capacitances and inductances that interact with fast-switching edges • Good power supply design: - Isolation from other parts - Filtering of interference on supply line(s) 4.3.10 RF VOUT Amplifier with Parasitic CG acts in parallel with RG (except for a gain of +1 V/V), which causes an increase in gain at high frequencies. CG also reduces the phase margin of the feedback loop, which becomes less stable. This effect can be reduced by reducing either CG or RF||RG. CN and RN form a low-pass filter that affects the signal at VP. This filter has a single real pole at 1/(2πRNCN). The largest value of RF that should be used depends on noise gain (see GN in Section 4.3.6 “Capacitive Loads”), CG and the open-loop gain’s phase shift. An approximate limit for RF is: EQUATION 4-2: 3.5 pF R F  10 k   ---------------  G N2 CG Some applications may modify these values to reduce either output loading or gain peaking (step-response overshoot). At high gains, RN needs to be small in order to prevent positive feedback and oscillations. Large CN values can also help.  2016 Microchip Technology Inc. REDUCING UNDESIRED NOISE AND SIGNALS SUPPLY BYPASSING AND FILTERING With this family of operational amplifiers, the power supply pin (VDD for single supply) should have a local bypass capacitor (i.e., 0.01 µF to 0.1 µF) within 2 mm of the pin for good high-frequency performance. These parts also need a bulk capacitor (i.e., 1 µF or larger) within 100 mm to provide large, slow currents. This bulk capacitor can be shared with other low-noise analog parts. In some cases, high-frequency power supply noise (e.g., switched mode power supplies) may cause undue intermodulation distortion with a DC offset shift; this noise needs to be filtered. Adding a small resistor into the supply connection can be helpful. 4.3.11 PCB DESIGN FOR DC PRECISION In order to achieve DC precision on the order of ±1 µV, many physical errors need to be minimized. The design of the printed circuit board (PCB), the wiring and the thermal environment have a strong impact on the precision achieved. A poor PCB design can easily be more than 100 times worse than the MCP6V81/1U/2/4 op amps’ minimum and maximum specifications. 4.3.11.1 PCB Layout Any time two dissimilar metals are joined together, a temperature-dependent voltage appears across the junction (the Seebeck or thermojunction effect). This effect is used in thermocouples to measure temperature. The following are examples of thermojunctions on a PCB: • Components (resistors, op amps, …) soldered to a copper pad • Wires mechanically attached to the PCB • Jumpers • Solder joints • PCB vias DS20005419B-page 23 MCP6V81/1U/2/4 Typical thermojunctions have temperature-to-voltage conversion coefficients of 1 to 100 µV/°C (sometimes higher). 4.4 Microchip’s AN1258 “Op Amp Precision Design: PCB Layout Techniques” (DS01258) contains in-depth information on PCB layout techniques that minimize thermojunction effects. It also discusses other effects, such as crosstalk, impedances, mechanical stresses and humidity. Many sensors are configured as Wheatstone bridges. Strain gauges and pressure sensors are two common examples. These signals can be small and the common-mode noise large. Amplifier designs with high differential gain are desirable. 4.3.11.2 Crosstalk DC crosstalk causes offsets that appear as a larger input offset voltage. Common causes include: Typical Applications 4.4.1 WHEATSTONE BRIDGE Figure 4-11 shows how to interface to a Wheatstone bridge with a minimum of components. Because the circuit is not symmetric, the ADC input is single-ended and there is a minimum of filtering; the CMRR is good enough for moderate common-mode noise. • Common-mode noise (remote sensors) • Ground loops (current return paths) • Power supply coupling 0.01C VDD R R Interference from the mains (usually 50 Hz or 60 Hz) and other AC sources can also affect the DC performance. Nonlinear distortion can convert these signals to multiple tones, including a DC shift in voltage. When the signal is sampled by an ADC, these AC signals can also be aliased to DC, causing an apparent shift in offset. FIGURE 4-11: To reduce interference: 4.4.2 - Keep traces and wires as short as possible Use shielding Use ground plane (at least a star ground) Place the input signal source near the DUT Use good PCB layout techniques Use a separate power supply filter (bypass capacitors) for these zero-drift op amps 4.3.11.3 Miscellaneous Effects Keep the resistances seen by the input pins as small and as near to equal as possible to minimize bias current-related offsets. Make the (trace) capacitances seen by the input pins small and equal. This is helpful in minimizing switching glitch-induced offset voltages. Bending a coax cable with a radius that is too small causes a small voltage drop to appear on the center conductor (the triboelectric effect). Make sure the bending radius is large enough to keep the conductors and insulation in full contact. Mechanical stresses can make some capacitor types (such as some ceramics) output small voltages. Use more appropriate capacitor types in the signal path and minimize mechanical stresses and vibration. Humidity can cause electrochemical potential voltages to appear in a circuit. Proper PCB cleaning helps, as does the use of encapsulants. DS20005419B-page 24 0.2R R R 1 kΩ + - ADC 100R 0.2R + VDD U1 MCP6V81 Simple Design. RTD SENSOR The ratiometric circuit in Figure 4-12 conditions a two-wire RTD for applications with a limited temperature range. U1 acts as a difference amplifier with a low-frequency pole. The sensor’s wiring resistance (RW) is corrected in firmware. Failure (open) of the RTD is detected by an out-of-range voltage. VDD RT RN 34.8 kΩ 10.0 kΩ RW RRTD 100Ω RW 10 nF RF 2.00 MΩ U1 + MCP6V81 RG RF 10.0 kΩ 2.00 MΩ 1.00 kΩ 100 nF RB 4.99 kΩ 1.0 µF 10 nF VDD + - ADC FIGURE 4-12: RTD Sensor.  2016 Microchip Technology Inc. MCP6V81/1U/2/4 4.4.3 OFFSET VOLTAGE CORRECTION Figure 4-13 shows MCP6V81 (U2) correcting the input offset voltage of another op amp (U1). R2 and C2 integrate the offset error seen at U1’s input. The integration needs to be slow enough to be stable (with the feedback provided by R1 and R3). R4 and R5 attenuate the integrator’s output. This shifts the integrator pole down in frequency. R1 VIN R3 R2 R2 - + R5 + VDD/2 R4 C2 VOUT U1 MCP6XXX U2 VDD/2 MCP6V81 FIGURE 4-13: 4.4.4 Offset Correction. PRECISION COMPARATOR Use high gain before a comparator to improve the latter’s performance. Do not use MCP6V81/1U/2/4 as a comparator by itself; the VOS correction circuitry does not operate properly without a feedback loop. U1 VIN + R1 R2 VDD/2 MCP6V81 R3 R4 R5 VOUT + - U2 MCP6541 FIGURE 4-14: Precision Comparator.  2016 Microchip Technology Inc. DS20005419B-page 25 MCP6V81/1U/2/4 NOTES: DS20005419B-page 26  2016 Microchip Technology Inc. MCP6V81/1U/2/4 5.0 DESIGN AIDS Microchip provides the basic design aids needed for the MCP6V81/1U/2/4 family of op amps. 5.1 FilterLab® Software Microchip’s FilterLab® software is an innovative software tool that simplifies analog active filter (using op amps) design. Available at no cost from the Microchip web site at www.microchip.com/filterlab, the FilterLab design tool provides full schematic diagrams of the filter circuit with component values. It also outputs the filter circuit in SPICE format, which can be used with the macro model to simulate actual filter performance. 5.2 Microchip Advanced Part Selector (MAPS) MAPS is a software tool that helps efficiently identify Microchip devices that fit a particular design requirement. Available at no cost from the Microchip web site at www.microchip.com/maps, MAPS is an overall selection tool for Microchip’s product portfolio that includes Analog, Memory, MCUs and DSCs. Using this tool, a customer can define a filter to sort features for a parametric search of devices and export side-by-side technical comparison reports. Helpful links are also provided for data sheets, purchase and sampling of Microchip parts. 5.3 Analog Demonstration and Evaluation Boards Microchip offers a broad spectrum of Analog Demonstration and Evaluation Boards that are designed to help customers achieve faster time to market. For a complete listing of these boards and their corresponding user’s guides and technical information, visit the Microchip web site at www.microchip.com/analog tools. Some boards that are especially useful are: • MCP6V01 Thermocouple Auto-Zeroed Reference Design (P/N MCP6V01RD-TCPL) • MCP6XXX Amplifier Evaluation Board 1 (P/N DS51667) • MCP6XXX Amplifier Evaluation Board 2 (P/N DS51668) • MCP6XXX Amplifier Evaluation Board 3 (P/N DS51673) • MCP6XXX Amplifier Evaluation Board 4 (P/N DS51681) • Active Filter Demo Board Kit (P/N DS51614) • 8-Pin SOIC/MSOP/TSSOP/DIP Evaluation Board (P/N SOIC8EV) • 14-Pin SOIC/TSSOP/DIP Evaluation Board (P/N SOIC14EV) 5.4 Application Notes The following Microchip Application Notes are available on the Microchip web site at www.microchip. com/appnotes and are recommended as supplemental reference resources. ADN003: “Select the Right Operational Amplifier for your Filtering Circuits” (DS21821) AN722: “Operational Amplifier Topologies and DC Specifications” (DS00722) AN723: “Operational Amplifier AC Specifications and Applications” (DS00723) AN884: “Driving Capacitive Loads With Op Amps” (DS00884) AN990: “Analog Sensor Conditioning Circuits – An Overview” (DS00990) AN1177: “Op Amp Precision Design: DC Errors” (DS01177) AN1228: “Op Amp Precision Design: Random Noise” (DS01228) AN1258: “Op Amp Precision Design: PCB Layout Techniques” (DS01258) AN1767: “Solutions for Radio Frequency Electromagnetic Interference in Amplifier Circuits” (DS01767A) These Application Notes and others are listed in the design guide: “Signal Chain Design Guide” (DS21825)  2016 Microchip Technology Inc. DS20005419B-page 27 MCP6V81/1U/2/4 NOTES: DS20005419B-page 28  2016 Microchip Technology Inc. MCP6V81/1U/2/4 6.0 PACKAGING INFORMATION 6.1 Package Marking Information 5-Lead SC70 (MCP6V81U) Example Device MCP6V81UT-E/LTY Code DVNN 5-Lead SOT-23 (MCP6V81, MCP6V81U) XXXXY WWNNN Device DV56 Example Code MCP6V81T-E/OT AABGY MCP6V81UT-E/OT AABHY 8-Lead MSOP (MCP6V82) AABG5 44256 Example 6V82 544256 8-Lead TDFN (MCP6V82) Example Device MCP6V82T-E/MNY Note:  2016 Microchip Technology Inc. Code ACT Applies to 8-Lead 2x3 TDFN. ACX 544 25 DS20005419B-page 29 MCP6V81/1U/2/4 14-Lead TSSOP (MCP6V84) XXXXXXXX YYWW NNN Legend: XX...X Y YY WW NNN e3 * Note: DS20005419B-page 30 Example MCP6V84 1544 256 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC® designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information.  2016 Microchip Technology Inc. MCP6V81/1U/2/4 5-Lead Plastic Small Outine Transistor (LTY) [SC70] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging D b 3 1 2 E1 E 4 5 e A e A2 c A1 L *   , .1 2 +,,+%- +. . ./ 0 ! 2  /'4  5 3!"# 6    27%7  5 6      6     /'8   5     278   ! ! 9! /',  5  ! : , ,    3 , %7  5 6 3 , 8  1 ! 6                                        ! "#$ "   % &'  ((    Microchip Technology Drawing   %  & ( # C04-083B ;3"  2016 Microchip Technology Inc. DS20005419B-page 31 MCP6V81/1U/2/4 5-Lead Plastic Small Outine Transistor (LTY) [SC70] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS20005419B-page 32  2016 Microchip Technology Inc. MCP6V81/1U/2/4           :  7 ( =   27    $>>(((  >7 b N E E1 3 2 1 e e1 D A2 A c φ A1 L L1 *   , .1 2 +,,+%- +. ./ 0 . ! , 2